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Jeffrey B. Hurst, Ph.D. - Publications

Affiliations: 
2007 Electrical and Computer Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Hurst JB, Lewis SD, Oye MM, Holmes AL, Ptak AJ, Reedy RC. Unintentional calcium incorporation in Ga(Al, In, N)As Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1058-1062. DOI: 10.1116/1.2717196  0.532
2007 Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119  0.557
2007 Zhang MH, Oye M, Cobb B, Zhu F, Kim HS, Ok IJ, Hurst J, Lewis S, Holmes A, Lee JC, Koveshnikov S, Tsai W, Yakimov M, Torkanov V, Oktyabrsky S. Importance of controlling oxygen incorporation into HfO2∕Si∕n-GaAs gate stacks Journal of Applied Physics. 101: 34103. DOI: 10.1063/1.2432479  0.518
2006 Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM. Atomic force microscopy study of sapphire surfaces annealed with a H 2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH) 3 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1572-1576. DOI: 10.1116/1.2200384  0.52
2005 Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, et al. Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1737-1739. DOI: 10.1116/1.2091119  0.49
2005 Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, et al. Inert gas maintenance for molecular-beam epitaxy systems Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1257-1261. DOI: 10.1116/1.1878993  0.522
2004 Zheng XG, Hsu JS, Hurst JB, Li X, Wang S, Sun X, Holmes AL, Campbell JC, Huntington AS, Coldren LA. Long-wavelength In0.53 Ga0.47As-In0.52 Al0.48As large-area avalanche photodiodes and arrays Ieee Journal of Quantum Electronics. 40: 1068-1073. DOI: 10.1109/Jqe.2004.831637  0.548
2003 Campbell JC, Wang S, Zheng X, Li X, Li N, Ma F, Sun X, Collins CJ, Beck AL, Yang B, Hurst JB, Sidhu R, Holmes AL, Chowdhury U, Wong MM, et al. Photodetectors: UV to IR Proceedings of Spie - the International Society For Optical Engineering. 5246: 375-388. DOI: 10.1117/12.511201  0.392
2002 Wang S, Sidhu R, Karve G, Ma F, Li X, Zheng XG, Hurst JB, Sun X, Li N, Holmes AL, Campbell JC. A study of low-bias photocurrent gradient of avalanche photodiodes Ieee Transactions On Electron Devices. 49: 2107-2113. DOI: 10.1109/Ted.2002.805233  0.525
2002 Wang S, Hurst JB, Ma F, Sidhu R, Sun X, Zheng XG, Holmes AL, Huntington A, Coldren LA, Campbell JC. Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates Ieee Photonics Technology Letters. 14: 1722-1724. DOI: 10.1109/Lpt.2002.804651  0.522
2002 Zheng XG, Hsu JS, Sun X, Hurst JB, Li X, Wang S, Holmes AL, Campbell JC, Huntington AS, Coldren LA. A 12 × 12 In 0.53Ga 0.47 As-In 0.52Al 0.48 As avalanche photodiode array Ieee Journal of Quantum Electronics. 38: 1536-1540. DOI: 10.1109/Jqe.2002.804297  0.545
2002 Campbell JC, Wang S, Zheng X, Li X, Li N, Ma F, Sun X, Hurst JB, Sidhu R, Holmes AL, Huntington A, Coldren LA. Recent developments in avalanche photodiodes Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2002: 53-57. DOI: 10.1109/COMMAD.2002.1237187  0.468
2002 Wang S, Hurst JB, Ma F, Sidhu R, Sun X, Zheng XG, Holmes AL, Campbell JC, Huntington A, Coldren LA. Low-noise InP-based avalanche photodiodes with an impact-ionization-engineered multiplication region Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 488-489.  0.48
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