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Talal M. Al tahtamouni, Ph.D. - Publications

Affiliations: 
2007 Department of Physics Kansas State University, Manhattan, KS, United States 
Area:
Condensed Matter Physics, Materials Science Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Al Tahtamouni TM, Du X, Lin J, Jiang H. Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition Optical Materials Express. 5: 648-654. DOI: 10.1364/OME.5.000648  0.607
2015 Al Tahtamouni TM, Du X, Li J, Lin J, Jiang H. Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition Optical Materials Express. 5: 274-280. DOI: 10.1364/Ome.5.000274  0.629
2013 Al Tahtamouni TM, Lin JY, Jiang HX. Effects of double layer AlN buffer layers on properties of Si-doped Al xGa1-xN for improved performance of deep ultraviolet light emitting diodes Journal of Applied Physics. 113. DOI: 10.1063/1.4798239  0.33
2012 Al Tahtamouni TM, Li J, Lin JY, Jiang HX. Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/28/285103  0.397
2012 Al Tahtamouni TM, Lin JY, Jiang HX. High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors Applied Physics Letters. 101. DOI: 10.1063/1.4766732  0.457
2012 Al Tahtamouni TM, Lin JY, Jiang HX. Optical polarization in c-plane Al-rich AlN/Al xGa 1-xN single quantum wells Applied Physics Letters. 101. DOI: 10.1063/1.4737941  0.338
2008 Sedhain A, Nepal N, Nakarmi ML, Al Tahtamouni TM, Lin JY, Jiang HX, Gu Z, Edgar JH. Photoluminescence properties of AlN homoepilayers with different orientations Applied Physics Letters. 93. DOI: 10.1063/1.2965613  0.597
2008 Al Tahtamouni TM, Sedhain A, Lin JY, Jiang HX. Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant Applied Physics Letters. 92. DOI: 10.1063/1.2890416  0.311
2008 Dahal R, Li J, Fan ZY, Nakarmi ML, Al Tahtamouni TM, Lin JY, Jiang HX. AlN MSM and Schottky photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2148-2151. DOI: 10.1002/Pssc.200778489  0.575
2007 Pantha BN, Nepal N, Al Tahtamouni TM, Nakarmi ML, Li J, Lin JY, Jiang HX. Correlation between biaxial stress and free exciton transition in AlN epilayers Applied Physics Letters. 91. DOI: 10.1063/1.2789182  0.568
2007 Dahal R, Al Tahtamouni TM, Fan ZY, Lin JY, Jiang HX. Hybrid AlN-SiC deep ultraviolet Schottky barrier photodetectors Applied Physics Letters. 90. DOI: 10.1063/1.2752126  0.377
2007 Al Tahtamouni TM, Sedhain A, Lin JY, Jiang HX. Growth and photoluminescence studies of a -plane AlN Alx Ga1-x N quantum wells Applied Physics Letters. 90. DOI: 10.1063/1.2743956  0.422
2006 Al Tahtamouni TM, Nepal N, Lin JY, Jiang HX, Chow WW. Growth and photoluminescence studies of Al-rich AlN/Al xGa 1-xN quantum wells Applied Physics Letters. 89. DOI: 10.1063/1.2358107  0.574
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