| Year |
Citation |
Score |
| 2013 |
Rishinaramangalam AK, Fairchild MN, Hersee SD, Balakrishnan G, Feezell DF. Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792519 |
0.739 |
|
| 2011 |
Hersee SD, Rishinaramangalam AK, Fairchild MN, Zhang L, Varangis P. Threading defect elimination in GaN nanowires Journal of Materials Research. 26: 2293-2298. DOI: 10.1557/Jmr.2011.112 |
0.74 |
|
| 2010 |
Talin AA, Léonard F, Katzenmeyer AM, Swartzentruber BS, Picraux ST, Toimil-Molares ME, Cederberg JG, Wang X, Hersee SD, Rishinaramangalum A. Transport characterization in nanowires using an electrical nanoprobe Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/2/024015 |
0.4 |
|
| 2009 |
Arslan I, Hyun JK, Erni R, Fairchild MN, Hersee SD, Muller DA. Using electrons as a high-resolution probe of optical modes in individual nanowires. Nano Letters. 9: 4073-7. PMID 19835353 DOI: 10.1021/Nl902266N |
0.303 |
|
| 2009 |
Léonard F, Talin AA, Katzenmeyer A, Swartzentruber BS, Picraux ST, Toimil-Molares E, Cederberg JG, Wang X, Hersee SD, RishinaRamangalum A. Electronic transport in nanowires: From injection-limited to spacecharge- limited behavior Proceedings of Spie - the International Society For Optical Engineering. 7406. DOI: 10.1117/12.827495 |
0.309 |
|
| 2009 |
Talin AA, Swartzentruber BS, Ĺonard F, Wang X, Hersee SD. Electrical transport in GaN nanowires grown by selective epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2040-2043. DOI: 10.1116/1.3123302 |
0.411 |
|
| 2009 |
Hersee SD, Fairchild M, Rishinaramangalam AK, Ferdous MS, Zhang L, Varangis PM, Swartzentruber BS, Talin AA. GaN nanowire light emitting diodes based on templated and scalable nanowire growth process Electronics Letters. 45: 75-76. DOI: 10.1049/El:20092391 |
0.726 |
|
| 2007 |
Ferdous MS, Wang X, Fairchild MN, Hersee SD. Effect of threading defects on InGaNGaN multiple quantum well light emitting diodes Applied Physics Letters. 91. DOI: 10.1063/1.2822395 |
0.745 |
|
| 2007 |
Li Q, Krauss JL, Hersee S, Han SM. Probing interactions of ge with chemical and thermal SiO2 to understand selective growth of Ge on Si during molecular beam epitaxy Journal of Physical Chemistry C. 111: 779-786. DOI: 10.1021/Jp062966O |
0.371 |
|
| 2006 |
Hersee SD, Sun X, Wang X. The controlled growth of GaN nanowires. Nano Letters. 6: 1808-11. PMID 16895377 DOI: 10.1021/Nl060553T |
0.434 |
|
| 2006 |
Li Q, Krauss JL, Hersee S, Han SM. Formation of Epitaxial Ge Nanorings on Si by Self-assembled SiO 2 Particles and Touchdown of Ge Through a Thin Layer of SiO2 Mrs Proceedings. 921. DOI: 10.1557/Proc-0921-T02-04 |
0.382 |
|
| 2006 |
Wang X, Sun X, Fairchild M, Hersee SD. Fabrication of GaN nanowire arrays by confined epitaxy Applied Physics Letters. 89. DOI: 10.1063/1.2402893 |
0.433 |
|
| 2006 |
Ferdous MS, Sun XY, Wang X, Fairchild MN, Hersee SD. Photoelectrochemical etching measurement of defect density in GaN grown by nanoheteroepitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2197059 |
0.752 |
|
| 2005 |
Li Q, Pattada B, Brueck SRJ, Hersee S, Han SM. Morphological evolution and strain relaxation of Ge islands grown on chemically oxidized Si(100) by molecular-beam epitaxy Journal of Applied Physics. 98. DOI: 10.1063/1.2067708 |
0.398 |
|
| 2005 |
Hersee SD, Sun XY, Wang X, Fairchild MN, Liang J, Xu J. Nanoheteroepitaxial growth of GaN on Si nanopillar arrays Journal of Applied Physics. 97. DOI: 10.1063/1.1937468 |
0.384 |
|
| 2005 |
Lee SC, Sun XY, Hersee SD, Brueck SRJ. Orientation-dependent nucleation of GaN on a nanoscale faceted Si surface Journal of Crystal Growth. 279: 289-292. DOI: 10.1016/J.Jcrysgro.2005.02.031 |
0.435 |
|
| 2005 |
Bommena R, Fulk C, Zhao J, Lee TS, Sivananthan S, Brueck SRJ, Hersee SD. Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors Journal of Electronic Materials. 34: 704-709. DOI: 10.1007/S11664-005-0007-7 |
0.334 |
|
| 2005 |
Bommena R, Fulk C, Zhao J, Lee TS, Sivananthan S, Brueck SRJ, Hersee SD. Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors Journal of Electronic Materials. 34: 704-709. |
0.334 |
|
| 2004 |
Li Q, Jiang YB, Xu H, Hersee S, Han SM. Heteroepitaxy of high-quality Ge on Si by nanoscale Ge seeds grown through a thin layer of SiO 2 Applied Physics Letters. 85: 1928-1930. DOI: 10.1063/1.1790027 |
0.388 |
|
| 2004 |
Sun XY, Bommena R, Burckel D, Frauenglass A, Fairchild MN, Brueck SRJ, Garrett GA, Wraback M, Hersee SD. Defect reduction mechanisms in the nanoheteroepitaxy of GaN on SiC Journal of Applied Physics. 95: 1450-1454. DOI: 10.1063/1.1639952 |
0.34 |
|
| 2004 |
Lee SC, Sun XY, Hersee SD, Brueck SRJ. Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy Journal of Crystal Growth. 272: 2-8. DOI: 10.1016/J.Jcrysgro.2004.08.074 |
0.395 |
|
| 2003 |
Lee SC, Sun XY, Hersee SD, Lee J, Ziang YB, Xu H, Brueck SRJ. Growth of GaN on a nanoscale periodic faceted Si substrate by metal organic vapor phase epitaxy Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 15-21. DOI: 10.1109/ISCSPC.2003.1354425 |
0.343 |
|
| 2003 |
Lee SC, Sun X, Hersee S, Brueck SRJ. Growth of GaN on a nanoscale-faceted Si substrate by metal-organic vapor-phase epitaxy Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 37-38. DOI: 10.1109/ISCS.2003.1239894 |
0.308 |
|
| 2003 |
Li Q, Han SM, Brueck SRJ, Hersee S, Jiang YB, Xu H. Selective growth of Ge on Si(100) through vias of SiO2 nanotemplate using solid source molecular beam epitaxy Applied Physics Letters. 83: 5032-5034. DOI: 10.1063/1.1632037 |
0.399 |
|
| 2002 |
Trager-Cowan C, Sweeney F, Hastie J, Manson-Smith SK, Cowan DA, McColl D, Mohammed A, O'Donnell KP, Zubia D, Hersee SD, Foxon CT, Harrison I, Novikov SV. Characterization of nitride thin films by electron backscatter diffraction. Journal of Microscopy. 205: 226-30. PMID 11996185 DOI: 10.1046/J.1365-2818.2002.00996.X |
0.664 |
|
| 2002 |
Brueck SRJ, Hersee SD, Zubia D. Introduction to the feature section on growth of heterostructure materials on nanoscale substrates Ieee Journal of Quantum Electronics. 38: 973-974. DOI: 10.1109/Jqe.2002.801646 |
0.62 |
|
| 2002 |
Hersee SD, Zubia D, Sun X, Bommena R, Fairchild M, Zhang S, Burckel D, Frauenglass A, Brueck SRJ. Nanoheteroepitaxy for the integration of highly mismatched semiconductor materials Ieee Journal of Quantum Electronics. 38: 1017-1028. DOI: 10.1109/Jqe.2002.800987 |
0.674 |
|
| 2002 |
Zubia D, Hersee SD, Khraishi T. Strain partitioning in coherent compliant heterostructures Applied Physics Letters. 80: 740-742. DOI: 10.1063/1.1445803 |
0.618 |
|
| 2002 |
Trager-Cowan C, Sweeney F, Wilkinson AJ, Watson IM, Middleton PG, O'Donnell KP, Zubia D, Hersee SD, Einfeldt S, Hommel D. Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence Physica Status Solidi C: Conferences. 532-536. DOI: 10.1002/Pssc.200390107 |
0.664 |
|
| 2001 |
Trager-Cowan C, Manson-Smith SK, Cowan DA, Sweeney F, McColl D, Mohammed A, Timm R, Middleton PG, O'Donnell KP, Zubia D, Hersee SD. Characterisation of nitride thin films by electron backscattered diffraction Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 82: 19-21. DOI: 10.1016/S0921-5107(00)00791-1 |
0.701 |
|
| 2001 |
Zubia D, Zhang S, Bommena R, Sun X, Brueck SRJ, Hersee SD. Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE Journal of Electronic Materials. 30: 812-816. DOI: 10.1007/S11664-001-0062-7 |
0.677 |
|
| 2001 |
Sweeney F, Trager-Cowan C, Hastie J, Cowan DA, O'Donnell KP, Zubia D, Hersee SD, Foxon CT, Harrison I, Novikov SV. Electron backscattered diffraction patterns from cooled gallium nitride thin films Physica Status Solidi (B) Basic Research. 228: 533-536. DOI: 10.1002/1521-3951(200111)228:2<533::Aid-Pssb533>3.0.Co;2-Q |
0.666 |
|
| 2000 |
Trager-Cowan C, McColl D, Sweeney F, Grimson STF, Treguer JF, Mohammed A, Middleton PG, Manson-Smith SK, O'Donnell KP, Van Der Stricht W, Moerman L, Demeester P, Wu MF, Vantomme A, Zubia D, ... Hersee SD, et al. Probing nitride thin films in 3-dimensions using a variable energy electron beam Mrs Internet Journal of Nitride Semiconductor Research. 5. DOI: 10.1557/Proc-595-F99W5.10 |
0.677 |
|
| 2000 |
Zubia D, Zaidi SH, Hersee SD, Brueck SRJ. Nanoheteroepitaxy: Nanofabrication route to improved epitaxial growth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3514-3520. DOI: 10.1116/1.1321283 |
0.69 |
|
| 2000 |
Zubia D, Zaidi SH, Brueck SRJ, Hersee SD. Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy Applied Physics Letters. 76: 858-860. DOI: 10.1063/1.125608 |
0.717 |
|
| 2000 |
Wang RH, Zubia D, O’Neil T, Emin D, Aselage T, Zhang W, Hersee SD. Chemical vapor deposition of B12As2 thin films on 6H-SiC Journal of Electronic Materials. 29: 1304-1306. DOI: 10.1007/S11664-000-0129-X |
0.642 |
|
| 2000 |
Wang RH, Zubia D, O'Neil T, Emin D, Aselage T, Zhang W, Hersee SD. Chemical vapor deposition of B12As2 thin films on 6H-SiC Journal of Electronic Materials. 29: 1304-1306. |
0.641 |
|
| 2000 |
Trager-Cowan C, McColl D, Sweeney F, Grimson STF, Treguer JF, Mohammed A, Middleton PG, Manson-Smith SK, O'Donnell KP, Van Der Stricht W, Moerman L, Demeester P, Wu MF, Vantomme A, Zubia D, ... Hersee SD, et al. Probing nitride thin films in 3-dimensions using a variable energy electron beam Mrs Internet Journal of Nitride Semiconductor Research. 5. |
0.342 |
|
| 1999 |
Zubia D, Hersee SD. Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials Journal of Applied Physics. 85: 6492-6496. DOI: 10.1063/1.370153 |
0.668 |
|
| 1999 |
Trager-Cowan C, McArthur S, Middleton PG, O'Donnell KP, Zubia D, Hersee SD. GaN epilayers on misoriented substrates Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 59: 235-238. DOI: 10.1016/S0921-5107(98)00373-0 |
0.67 |
|
| 1998 |
Trager-Cowan C, McArthur S, Middleton PG, O'Donnell KP, Zubia D, Hersee SD. Properties of GaN epilayers grown on misoriented sapphire substrates Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300001083 |
0.668 |
|
| 1997 |
Hersee S, Ramer J, Malloy K. The Microstructure of Metalorganic-Chemical-Vapor-Deposition GaN on Sapphire Mrs Bulletin. 22: 45-51. DOI: 10.1557/S0883769400033406 |
0.329 |
|
| 1997 |
Gingrich HS, Chumney DR, Sun SZ, Hersee SD, Lester LF, Brueck SRJ. Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells Ieee Photonics Technology Letters. 9: 155-157. DOI: 10.1109/68.553070 |
0.349 |
|
| 1997 |
Ramer JC, Zubia D, Liu G, Hersee SD. Stability and interface abruptness of InxGa1-xN/InyGa1-yN multiple quantum well structures grown by OMVPE Journal of Electronic Materials. 26: 1109-1113. |
0.593 |
|
| 1996 |
Lester LF, Brown JM, Ramer JC, Zhang L, Hersee SD, Zolper JC. Nonalloyed Ti/Al Ohmic contacts to n‐type GaN using high‐temperature premetallization anneal Applied Physics Letters. 69: 2737-2739. DOI: 10.1063/1.117695 |
0.316 |
|
| 1995 |
Zolper JC, Hagerott Crawford M, Howard AJ, Ramer J, Hersee SD. Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN Applied Physics Letters. 200. DOI: 10.1063/1.116459 |
0.39 |
|
| 1993 |
Chadda S, Pelcynski M, Malloy K, Hersee S. Microstructural Study of GaN Grown on Sapphire by MOCVD Mrs Proceedings. 326. DOI: 10.1557/Proc-326-353 |
0.307 |
|
| 1993 |
Sze T, Mahbobzadeh AM, Cheng J, Hersee SD, Osinski M, Brueck SRJ, Malloy KJ. Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources Proceedings of Spie. 1850: 109-114. DOI: 10.1117/12.146897 |
0.35 |
|
| 1992 |
Srinivasan ST, Schaus CF, Sun SZ, Armour EA, Hersee SD, McInerney JG, Paxton AH, Gallant DJ. High-power spatially coherent operation of unstable resonator semiconductor lasers with regrown lens trains Applied Physics Letters. 61: 1272-1274. DOI: 10.1063/1.107615 |
0.305 |
|
| 1986 |
Hersee SD, Barbier E, Blondeau R. A study of the orientation dependence of Ga(Al)As growth by MOVPE Journal of Crystal Growth. 77: 310-320. DOI: 10.1016/0022-0248(86)90317-9 |
0.345 |
|
| 1984 |
Hersee SD, Krakowski M, Blondeau R, Baldy M, De Crémoux B, Duchemin JP. Abrupt OMVPE grown GaAs/GaAlAs heterojunctions Journal of Crystal Growth. 68: 383-388. DOI: 10.1016/0022-0248(84)90439-1 |
0.338 |
|
| 1983 |
Krakowski M, Hirtz P, Blondeau R, Hersee SD, Baldy M, de Cremoux B, Duchemin JP. LOW THRESHOLD CURRENT GaAs/GaAlAs GRIN-SCH STRIPE LASERS GROWN BY OMVPE Electronics Letters. 19: 1082-1084. DOI: 10.1049/El:19830734 |
0.349 |
|
| 1983 |
Razeghi M, Hersee S, Hirtz P, Blondeau R, Cremoux Bd, Duchemin JP. Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD Electronics Letters. 19: 336-337. DOI: 10.1049/El:19830232 |
0.331 |
|
| 1983 |
Hersee SD, Baldy M, Duchemin JP. The variation of the P/N junction position in GaAs/GaAlAs double heterostructures grown by low pressure mo vpe Journal of Electronic Materials. 12: 345-357. DOI: 10.1007/Bf02651136 |
0.312 |
|
| 1982 |
Hersee SD, Baldy M, Assenat P. THE GROWTH OF QUANTUM WELL GaAs/GaAlAs LASER STRUCTURES Le Journal De Physique Colloques. 43. DOI: 10.1051/Jphyscol:1982523 |
0.33 |
|
| 1982 |
Hersee SD, Baldy M, Assenat P, Hyghe D, Bonnet M, Duchemin JP. THE OMVPE GROWTH OF GaAs AND GaAlAs ON A LARGE SCALE Le Journal De Physique Colloques. 43. DOI: 10.1051/Jphyscol:1982515 |
0.309 |
|
| 1982 |
Hersee SD, Hirtz JP, Baldy M, Duchemin JP. HIGH-MOBILITY SELECTIVELY DOPED GaAs/GaAlAs STRUCTURES GROWN BY LOW-PRESSURE OM-VPE Electronics Letters. 18: 1076-1078. DOI: 10.1049/El:19820737 |
0.359 |
|
| 1982 |
Hersee SD, Baldy M, Assenat P, Cremoux Bd, Duchemin JP. Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE Electronics Letters. 18: 618-620. DOI: 10.1049/El:19820423 |
0.339 |
|
| 1981 |
Duchemin JP, Hirtz JP, Razeghi M, Bonnet M, Hersee SD. GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications Journal of Crystal Growth. 55: 64-73. DOI: 10.1016/0022-0248(81)90272-4 |
0.377 |
|
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