| Year |
Citation |
Score |
| 2021 |
Das U, Theisen R, Hua A, Upadhyaya A, Lam I, Mouri T, Jiang N, Hauschild D, Weinhardt L, Yang W, Rohatgi A, Heske C. Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 34407514 DOI: 10.1088/1361-648X/ac1ec8 |
0.362 |
|
| 2020 |
Wilkes GC, Upadhyaya AD, Rohatgi A, Gupta MC. Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells Ieee Journal of Photovoltaics. 10: 1283-1289. DOI: 10.1109/Jphotov.2020.3006273 |
0.469 |
|
| 2020 |
Rohatgi A, Zhu K, Tong J, Kim DH, Reichmanis E, Rounsaville B, Prakash V, Ok Y. 26.7% Efficient 4-Terminal Perovskite–Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiOx Passivating Contact Silicon Cell Ieee Journal of Photovoltaics. 10: 417-422. DOI: 10.1109/Jphotov.2019.2963564 |
0.552 |
|
| 2020 |
Madani K, Rohatgi A, Min KH, Song H, Huang Y, Upadhyaya AD, Upadhyaya V, Rounsaville B, Ok Y. Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al2O3 with SiNx capping Solar Energy Materials and Solar Cells. 218: 110718. DOI: 10.1016/J.Solmat.2020.110718 |
0.514 |
|
| 2020 |
Huang Y, Ok Y, Madani K, Choi W, Upadhyaya AD, Upadhyaya VD, Rohatgi A. Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact Solar Energy Materials and Solar Cells. 214: 110585. DOI: 10.1016/J.Solmat.2020.110585 |
0.474 |
|
| 2020 |
Yoon W, Scheiman D, Ok Y, Song Z, Chen C, Jernigan G, Rohatgi A, Yan Y, Jenkins P. Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells Solar Energy Materials and Solar Cells. 210: 110482. DOI: 10.1016/J.Solmat.2020.110482 |
0.517 |
|
| 2019 |
Chou HC, Rohatgi A, Thomas EW, Kamra S, Bhat AK. Effects of Cu on CdTe / CdS Heterojunction Solar Cells with Au/Cu Contacts Journal of the Electrochemical Society. 142: 254-259. DOI: 10.1149/1.2043891 |
0.33 |
|
| 2018 |
Ok Y, Tam AM, Huang Y, Yelundur V, Das A, Payne AM, Chandrasekaran V, Upadhyaya AD, Jain A, Rohatgi A. Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiOx passivated rear emitter Applied Physics Letters. 113: 263901. DOI: 10.1063/1.5059559 |
0.783 |
|
| 2018 |
Ryu K, Madani K, Rohatgi A, Ok Y. High efficiency screen-printed n-type silicon solar cell using co-diffusion of APCVD boron emitter and POCl 3 back surface field Current Applied Physics. 18: 231-235. DOI: 10.1016/J.Cap.2017.11.004 |
0.491 |
|
| 2017 |
Yoon W, Moore JE, Cho E, Scheiman D, Kotulak NA, Cleveland E, Ok Y, Jenkins PP, Rohatgi A, Walters RJ. Hole-selective molybdenum oxide as a full-area rear contact to crystalline p-type Si solar cells Japanese Journal of Applied Physics. 56: 08MB18. DOI: 10.7567/Jjap.56.08Mb18 |
0.349 |
|
| 2017 |
Rohatgi A, Rounsaville B, Ok Y, Tam AM, Zimbardi F, Upadhyaya AD, Tao Y, Madani K, Richter A, Benick J, Hermle M. Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact Ieee Journal of Photovoltaics. 7: 1236-1243. DOI: 10.1109/Jphotov.2017.2715720 |
0.493 |
|
| 2017 |
Sopori B, Basnyat P, Devayajanam S, Tan T, Upadhyaya A, Tate K, Rohatgi A, Xu H. Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results Ieee Journal of Photovoltaics. 7: 97-103. DOI: 10.1109/Jphotov.2016.2621345 |
0.434 |
|
| 2017 |
Kang MH, Kim N, Yun C, Kim YH, Rohatgi A, Han ST. Analysis of a commercial-scale photovoltaics system performance and economic feasibility Journal of Renewable and Sustainable Energy. 9: 023505. DOI: 10.1063/1.4979502 |
0.31 |
|
| 2017 |
Tao Y, Madani K, Cho E, Rounsaville B, Upadhyaya V, Rohatgi A. High-efficiency selective boron emitter formed by wet chemical etch-back for n-type screen-printed Si solar cells Applied Physics Letters. 110: 021101. DOI: 10.1063/1.4973626 |
0.396 |
|
| 2016 |
Dixon J, Rajan A, Bohlemann S, Coso D, Upadhyaya AD, Rohatgi A, Chu S, Majumdar A, Yee S. Evaluation of a Silicon (90)Sr Betavoltaic Power Source. Scientific Reports. 6: 38182. PMID 27905521 DOI: 10.1038/Srep38182 |
0.383 |
|
| 2016 |
Kang MH, Ok YW, Rohatgi A. Investigation of Atomic Layer Deposition Al 2O 3 Passivation for Screen-Printed Large-Area Solar Cells Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2556982 |
0.505 |
|
| 2016 |
Cho E, Ok YW, Upadhyaya AD, Binns MJ, Appel J, Guo J, Rohatgi A. P-Type Indium-Doped Passivated Emitter Rear Solar Cells (PERC) on Czochralski Silicon Without Light-Induced Degradation Ieee Journal of Photovoltaics. 6: 795-800. DOI: 10.1109/Jphotov.2016.2547578 |
0.455 |
|
| 2016 |
Cho E, Ok YW, Dahal LD, Das A, Upadhyaya V, Rohatgi A. Comparison of POCl3 diffusion and phosphorus ion-implantation induced gettering in crystalline Si solar cells Solar Energy Materials and Solar Cells. 157: 245-249. DOI: 10.1016/j.solmat.2016.05.057 |
0.339 |
|
| 2016 |
Kang MH, Rohatgi A. Quantitative analysis of the levelized cost of electricity of commercial scale photovoltaics systems in the US Solar Energy Materials and Solar Cells. 154: 71-77. DOI: 10.1016/J.Solmat.2016.04.046 |
0.313 |
|
| 2016 |
Ryu K, Choi CJ, Park H, Kim D, Rohatgi A, Ok YW. Fundamental understanding, impact, and removal of boron-rich layer on n-type silicon solar cells Solar Energy Materials and Solar Cells. 146: 58-62. DOI: 10.1016/J.Solmat.2015.11.031 |
0.504 |
|
| 2016 |
Ryu K, Choi CJ, Rohatgi A, Ok YW. Study of degradation in bulk lifetime of n-type silicon wafer due to oxidation of boron-rich layer Current Applied Physics. 16: 497-500. DOI: 10.1016/J.Cap.2016.02.001 |
0.375 |
|
| 2016 |
Chen C, Hermle M, Benick J, Tao Y, Ok Y, Upadhyaya A, Tam AM, Rohatgi A. Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact Progress in Photovoltaics: Research and Applications. 25: 49-57. DOI: 10.1002/Pip.2809 |
0.504 |
|
| 2016 |
Chen C, Hao R, Upadhyaya VD, Ravi TS, Rohatgi A. Development of high-efficiency large-area screen-printed solar cells on direct kerfless epitaxially grown monocrystalline Si wafer and structure Progress in Photovoltaics: Research and Applications. 24: 1133-1141. DOI: 10.1002/Pip.2779 |
0.522 |
|
| 2016 |
Ryu K, Cho E, Rohatgi A, Ok YW. Process development and comparison of various boron emitter technologies for high-efficiency (~21%) n-type silicon solar cells Progress in Photovoltaics: Research and Applications. DOI: 10.1002/pip.2775 |
0.374 |
|
| 2016 |
Tao Y, Upadhyaya V, Chen CW, Payne A, Chang EL, Upadhyaya A, Rohatgi A. Large area tunnel oxide passivated rear contact n-type Si solar cells with 21.2% efficiency Progress in Photovoltaics: Research and Applications. DOI: 10.1002/Pip.2739 |
0.515 |
|
| 2015 |
Yoon W, Cho E, Myers JD, Ok YW, Lumb MP, Frantz JA, Kotulak NA, Scheiman D, Jenkins PP, Rohatgi A, Walters RJ. Transparent conducting oxide-based, passivated contacts for high efficiency crystalline Si solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356313 |
0.392 |
|
| 2015 |
Hermle M, Feldmann F, Eisenlohr J, Benick J, Richter A, Lee B, Stradins P, Rohatgi A, Glunz SW. Approaching efficiencies above 25% with both sides-contacted silicon solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356219 |
0.378 |
|
| 2015 |
Tao Y, Chang EL, Upadhyaya A, Roundaville B, Ok YW, Madani K, Chen CW, Tate K, Upadhyaya V, Zimbardi F, Keane J, Payne A, Rohatgi A. 730 mV implied Voc enabled by tunnel oxide passivated contact with PECVD grown and crystallized n+ polycrystalline Si 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356218 |
0.369 |
|
| 2015 |
Upadhyaya AD, Ok YW, Chang E, Upadhyaya V, Madani K, Tate K, Rounsaville B, Choi CJ, Chandrasekaran V, Yelundur V, Gupta A, Rohatgi A. Ion-Implanted Screen-Printed n-Type Solar Cell With Tunnel Oxide Passivated Back Contact Ieee Journal of Photovoltaics. DOI: 10.1109/JPHOTOV.2015.2496861 |
0.687 |
|
| 2015 |
Chen CW, Hao R, Upadhyaya V, Cooper IB, Upadhyaya A, Zhang A, Ravi TS, Rohatgi A. High-efficiency large-area screen-printed solar cell on epitaxial thin active layer with porous si back reflector using standard industrial process Ieee Journal of Photovoltaics. 5: 123-128. DOI: 10.1109/Jphotov.2014.2363564 |
0.543 |
|
| 2015 |
Ryu K, Upadhyaya A, Upadhyaya V, Rohatgi A, Ok YW. High efficiency large area n-type front junction silicon solar cells with boron emitter formed by screen printing technology Progress in Photovoltaics: Research and Applications. 23: 119-123. DOI: 10.1002/Pip.2486 |
0.508 |
|
| 2014 |
Cooper IB, Tate K, Rounsaville BC, Reedy RC, Rohatgi A. Improving Si solar cell performance through development of lightly doped emitters Ecs Transactions. 60: 1273-1278. DOI: 10.1149/06001.1273ecst |
0.411 |
|
| 2014 |
Hao R, Ravi TS, Siva V, Vatus J, Miller D, Custodio J, Moyers K, Chen CW, Upadhyaya A, Rohatgi A. High efficiency solar cells on direct kerfless 156 mm mono crystalline Si wafers by high throughput epitaxial growth 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2978-2982. DOI: 10.1109/PVSC.2014.6925557 |
0.396 |
|
| 2014 |
Jura MP, Miller JB, Yim JWL, Forziati J, Murphy B, Chleboski R, Cooper IB, Rohatgi A, Black MR. Conventionally-processed silicon nanowire solar cells demonstrating efficiency improvement over standard cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 598-600. DOI: 10.1109/PVSC.2014.6924992 |
0.394 |
|
| 2014 |
Tao Y, Rohatgi A. High-efficiency large area ion-implanted n-type front junction Si solar cells with screen-printed contacts and SiO2 passivated boron emitters 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 3654-3658. DOI: 10.1109/PVSC.2014.6924900 |
0.384 |
|
| 2014 |
Cooper IB, Tate K, Renshaw JS, Carroll AF, Mikeska KR, Reedy RC, Rohatgi A. Investigation of the mechanism resulting in low resistance ag thick-film contact to si solar cells in the context of emitter doping density and contact firing for current-generation ag paste Ieee Journal of Photovoltaics. 4: 134-141. DOI: 10.1109/Jphotov.2013.2285621 |
0.437 |
|
| 2014 |
Tao Y, Ok YW, Zimbardi F, Upadhyaya AD, Lai JH, Ning S, Upadhyaya VD, Rohatgi A. Fully ion-implanted and screen-printed 20.2% efficient front junction silicon cells on 239 cm 2 n-type cz substrate Ieee Journal of Photovoltaics. 4: 58-63. DOI: 10.1109/Jphotov.2013.2281106 |
0.451 |
|
| 2014 |
Ok Y, Upadhyaya AD, Tao Y, Zimbardi F, Ryu K, Kang M, Rohatgi A. Corrigendum to “Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells” [Sol. Energy Mater. Sol. Cells 123 (2014) 92–96] Solar Energy Materials and Solar Cells. 124: 256. DOI: 10.1016/J.Solmat.2014.03.008 |
0.449 |
|
| 2014 |
Ok YW, Upadhyaya AD, Tao Y, Zimbardi F, Ryu K, Kang MH, Rohatgi A. Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells Solar Energy Materials and Solar Cells. 123: 92-96. DOI: 10.1016/J.Solmat.2014.01.002 |
0.436 |
|
| 2014 |
Kang MH, Rohatgi A, Ristow A. Development of a simple analytical model to quantify the PV module cost premium associated with module efficiency and cell technology Renewable and Sustainable Energy Reviews. 37: 380-385. DOI: 10.1016/J.Rser.2014.05.027 |
0.785 |
|
| 2014 |
Liu Y, Das A, Lin Z, Cooper IB, Rohatgi A, Wong C. Hierarchical robust textured structures for large scale self-cleaning black silicon solar cells Nano Energy. 3: 127-133. DOI: 10.1016/J.Nanoen.2013.11.002 |
0.463 |
|
| 2014 |
Tao Y, Payne A, Upadhyaya VD, Rohatgi A. 20.7% efficient ion-implanted large arean-type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition Progress in Photovoltaics: Research and Applications. 22: 1030-1039. DOI: 10.1002/Pip.2545 |
0.464 |
|
| 2013 |
Ryu K, Ok YW, Choi CJ, Rohatgi A. Study of lifetime degradation in n-type silicon due to oxidation of boron-rich layer Conference Record of the Ieee Photovoltaic Specialists Conference. 2655-2658. DOI: 10.1109/PVSC.2013.6745019 |
0.301 |
|
| 2013 |
Chen CW, Upadhyaya A, Hao R, Upadhyaya V, Keane J, Zimbardi F, Kadish M, Pham I, Ning S, Ravi KV, Ravi TS, Rohatgi A. High efficiency screen-printed 156cm2 solar cells on thin epitaxially grown silicon material Conference Record of the Ieee Photovoltaic Specialists Conference. 2179-2182. DOI: 10.1109/PVSC.2013.6744907 |
0.408 |
|
| 2013 |
Chen CW, Kang MH, Upadhyaya V, Kapoor A, Tate JK, Keane JC, Ning S, Rohatgi A. Understanding and development of screen-printed front metallization for high-efficiency low-to-medium concentrator silicon solar cells Ieee Journal of Photovoltaics. 3: 944-951. DOI: 10.1109/Jphotov.2013.2253832 |
0.478 |
|
| 2013 |
Meier DL, Chandrasekaran V, Gupta A, Yelundur V, Rohatgi A. Silver contact grid: Inferred contact resistivity and cost minimization in 19% silicon solar cells Ieee Journal of Photovoltaics. 3: 199-205. DOI: 10.1109/Jphotov.2012.2217939 |
0.752 |
|
| 2013 |
Renshaw JS, Cooper IB, Rohatgi A. Quantitative understanding of the benefit of selective emitters on screen printed Si solar cells as a function of improved paste contact properties Applied Physics Letters. 102. DOI: 10.1063/1.4773478 |
0.515 |
|
| 2013 |
Renshaw JS, Upadhyaya A, Upadhyaya V, Cooper IB, Rohatgi A. Optimization of ultraviolet laser doping for crystalline silicon solar cells with a novel segmented selective emitter design Progress in Photovoltaics: Research and Applications. 21: 141-147. DOI: 10.1002/Pip.2316 |
0.38 |
|
| 2012 |
Cooper IB, Tate K, Carroll AF, Mikeska KR, Reedy RC, Rohatgi A. Low resistance screen-printed Ag contacts to POCl3 emitters with low saturation current density for high efficiency Si solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 3359-3364. DOI: 10.1109/PVSC.2012.6318292 |
0.423 |
|
| 2012 |
Rounsaville B, Cooper IB, Tate K, Kadish M, Das A, Rohatgi A. Analysis of cast mono-crystalline ingot characteristics with applications to solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 3009-3014. DOI: 10.1109/PVSC.2012.6318217 |
0.335 |
|
| 2012 |
Ok YW, Upadhyaya AD, Tao Y, Zimbardi F, Ning S, Rohatgi A. Ion-implanted and screen-printed large area 19.6% efficient n-type bifacial Si solar cell Conference Record of the Ieee Photovoltaic Specialists Conference. 2240-2243. DOI: 10.1109/PVSC.2012.6318042 |
0.317 |
|
| 2012 |
Rao RA, Mathew L, Sarkar D, Smith S, Saha S, Garcia R, Stout R, Gurmu A, Ainom M, Onyegam E, Xu D, Jawarani D, Fossum J, Banerjee S, Das U, ... ... Rohatgi A, et al. A low cost kerfless thin crystalline Si solar cell technology Conference Record of the Ieee Photovoltaic Specialists Conference. 1837-1840. DOI: 10.1109/PVSC.2012.6317951 |
0.344 |
|
| 2012 |
Chen CW, Chen XD, Church K, Yang H, Tate K, Cooper I, Rohatgi A. High efficiency screen printed low-medium concentrator silicon solar cells with direct printed 50μm wide fingers Conference Record of the Ieee Photovoltaic Specialists Conference. 928-931. DOI: 10.1109/PVSC.2012.6317754 |
0.373 |
|
| 2012 |
Ryu K, Upadhyaya A, Ok YW, Kang MH, Upadhyaya V, Metin L, Xu H, Bhanap A, Rohatgi A. High-efficiency n-type Si solar cells with novel inkjet-printed boron emitters Ieee Electron Device Letters. 33: 854-856. DOI: 10.1109/Led.2012.2191263 |
0.51 |
|
| 2012 |
Ebong A, Cooper IB, Rounsaville B, Rohatgi A, Dovrat M, Kritchman E, Brusilovsky D, Benichou A. On the Ink Jetting of Full Front Ag Gridlines for Cost-Effective Metallization of Si Solar Cells Ieee Electron Device Letters. 33: 637-639. DOI: 10.1109/Led.2012.2186553 |
0.362 |
|
| 2012 |
Ramanathan S, Meemongkolkiat V, Das A, Rohatgi A, Koehler I. Understanding and fabrication of 20 efficient cells using spin-on-based simultaneous diffusion and dielectric passivation Ieee Journal of Photovoltaics. 2: 22-26. DOI: 10.1109/Jphotov.2011.2177446 |
0.84 |
|
| 2012 |
Das A, Rohatgi A. Simultaneous iron gettering and passivation of p-type monocrystalline silicon using a negatively charged aluminum-doped dielectric Applied Physics Letters. 101. DOI: 10.1063/1.4771979 |
0.44 |
|
| 2012 |
Ryu K, Upadhyaya A, Song HJ, Choi CJ, Rohatgi A, Ok YW. Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4746424 |
0.525 |
|
| 2012 |
Rohatgi A, Meier DL, McPherson B, Ok YW, Upadhyaya AD, Lai JH, Zimbardi F. High-throughput ion-implantation for low-cost high-efficiency silicon solar cells Energy Procedia. 15: 10-19. DOI: 10.1016/J.Egypro.2012.02.002 |
0.402 |
|
| 2012 |
Liu Y, Das A, Xu S, Lin Z, Xu C, Wang ZL, Rohatgi A, Wong CP. Hybridizing ZnO nanowires with micropyramid silicon wafers as superhydrophobic high-efficiency solar cells Advanced Energy Materials. 2: 47-51. DOI: 10.1002/Aenm.201100287 |
0.523 |
|
| 2011 |
Kang MH, Hong J, Cooper I, Ebong A, Rounsaville B, Rohatgi A. Reduction in Light Induced Degradation (LID) in B-doped Cz-Si Solar Cells with SiCxNy Antireflection (AR) Coating Journal of the Electrochemical Society. 158: H724. DOI: 10.1149/1.3590741 |
0.45 |
|
| 2011 |
Renshaw J, Rohatgi A. Device optimization for screen printed interdigitated back contact solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 002924-002927. DOI: 10.1109/PVSC.2011.6186557 |
0.346 |
|
| 2011 |
Ryu K, Upadhyaya A, Das A, Ramanathan S, Ok YW, Xu H, Metin L, Bhanap A, Rohatgi A. High efficiency n-type silicon solar cell with a novel inkjet-printed boron emitter Conference Record of the Ieee Photovoltaic Specialists Conference. 001131-001133. DOI: 10.1109/PVSC.2011.6186152 |
0.362 |
|
| 2011 |
Ebong A, Cooper IB, Tate K, Rounsaville B, Zimbardi F, Upadhyaya V, Rohatgi A, Dovrat M, Kritchman E, Brusilovsky D, Benichou A. Implementing narrow front silver gridlines through ink jet machine for high quality contacts to silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 001050-001053. DOI: 10.1109/PVSC.2011.6186132 |
0.363 |
|
| 2011 |
Ebong A, Upadhyaya A, Kean J, Rounsaville BC, Cooper IB, Upadhyaya V, Kapoor A, Rohatgi A, Tamboli DC, Wu A, Rao MB. Effect of surface cleaning on pyramid size of randomly textured mono crystalline silicon and the impact on solar cell efficiency Conference Record of the Ieee Photovoltaic Specialists Conference. 001046-001049. DOI: 10.1109/PVSC.2011.6186131 |
0.381 |
|
| 2011 |
Das A, Rohatgi A. The impact of cell design on light induced degradation in p-type silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 000158-000164. DOI: 10.1109/PVSC.2011.6185869 |
0.397 |
|
| 2011 |
Ebong A, Cooper IB, Rounsaville BC, Rohatgi A, Dovrat M, Kritchman E, Brusilovsky D, Benichou A. Capitalizing on the Glass-Etching Effect of Silver Plating Chemistry to Contact Si Solar Cells With Homogeneous 100–110 $\Omega/\hbox{sq}$ Emitters Ieee Electron Device Letters. 32: 779-781. DOI: 10.1109/Led.2011.2131115 |
0.485 |
|
| 2011 |
Ok Y, Rohatgi A, Kil Y, Park S, Kim D, Lee J, Choi C. Abnormal Dopant Distribution in $\hbox{POCl}_{3}$-Diffused $\hbox{N}^{+}$ Emitter of Textured Silicon Solar Cells Ieee Electron Device Letters. 32: 351-353. DOI: 10.1109/Led.2010.2098840 |
0.469 |
|
| 2011 |
Lai JH, Upadhyaya A, Ramanathan S, Das A, Tate K, Upadhyaya V, Kapoor A, Chen CW, Rohatgi A. High-efficiency large-area rear passivated silicon solar cells with local Al-BSF and screen-printed contacts Ieee Journal of Photovoltaics. 1: 16-21. DOI: 10.1109/Jphotov.2011.2163151 |
0.643 |
|
| 2011 |
Peng C, Zhang H, Stavola M, Yelundur V, Rohatgi A, Carnel L, Seacrist M, Kalejs J. Interaction of hydrogen with carbon in multicrystalline Si solar-cell materials Journal of Applied Physics. 109. DOI: 10.1063/1.3561367 |
0.759 |
|
| 2011 |
Kang MH, Rohatgi A, Hong J, Rounsaville B, Upadhyaya V, Ebong A, Das A. Effect of carbon containing SiNx
antireflection coating on the screen-printed contact and low illumination performance of silicon solar cell Progress in Photovoltaics: Research and Applications. 21: 351-358. DOI: 10.1002/Pip.1184 |
0.46 |
|
| 2011 |
Kang MH, Ryu K, Upadhyaya A, Rohatgi A. Optimization of SiN AR coating for Si solar cells and modules through quantitative assessment of optical and efficiency loss mechanism Progress in Photovoltaics: Research and Applications. 19: 983-990. DOI: 10.1002/Pip.1095 |
0.455 |
|
| 2010 |
Peng C, Stravola M, Zhang H, Yelundur V, Rohatgi A, Carnel L, Seacrist M, Kalejs J. Reactions of H with C in Multicrystalline Si Solar-cell Materials Mrs Proceedings. 1268. DOI: 10.1557/Proc-1268-Ee02-02 |
0.759 |
|
| 2010 |
Das A, Kim DS, Nakayashiki K, Rounsaville B, Meemongkolkiat V, Rohatgi A. Boron diffusion with boric acid for high efficiency silicon solar cells Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3392364 |
0.821 |
|
| 2010 |
Das A, Rohatgi A. Optical and electrical characterization of silver microflake colloid films Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3276456 |
0.366 |
|
| 2010 |
Cooper IB, Ebong A, Rounsaville BC, Rohatgi A. Understanding of High-Throughput Rapid Thermal Firing of Screen-Printed Contacts to Large-Area Cast Multicrystalline Si Solar Cells Ieee Transactions On Electron Devices. 57: 2872-2879. DOI: 10.1109/Ted.2010.2065232 |
0.543 |
|
| 2010 |
Das A, Meemongkolkiat V, Kim DS, Ramanathan S, Rohatgi A. 20% efficient screen-printed cells with spin-on-dielectric-passivated boron back-surface field Ieee Transactions On Electron Devices. 57: 2462-2469. DOI: 10.1109/Ted.2010.2057010 |
0.824 |
|
| 2010 |
Jellison GE, Budai JD, Bennett CJC, Tischler JZ, Duty CE, Yelundur V, Rohatgi A. High-resolution x-ray and light beam induced current (LBIC) measurements of multcrystalline silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1715-1720. DOI: 10.1109/PVSC.2010.5616115 |
0.692 |
|
| 2010 |
Camacho-Cuadrado J, Cooper IB, Ebong A, Bausch G, Tulloch W, Beaucarne G, Good E, Rohatgi A. Investigation of the effect of compensation ratio (Rc) on solar cells fabricated with solar grade (SoG) czochralski silicon Conference Record of the Ieee Photovoltaic Specialists Conference. 1339-1342. DOI: 10.1109/PVSC.2010.5614360 |
0.377 |
|
| 2010 |
Cooper IB, Ebong A, Renshaw JS, Reedy R, Al-Jassim M, Rohatgi A. Understanding and Use of IR Belt Furnace for Rapid Thermal Firing of Screen-Printed Contacts to Si Solar Cells Ieee Electron Device Letters. 31: 461-463. DOI: 10.1109/Led.2010.2044363 |
0.448 |
|
| 2010 |
Feng Z, Wei C, Wee A, Rohatgi A, Lu W. Effects of CdCl2 treatment and annealing on CdS/SnO2/glass heterostructures for solar cells Thin Solid Films. 518: 7199-7203. DOI: 10.1016/J.Tsf.2010.04.076 |
0.327 |
|
| 2010 |
Ebong A, Cooper IB, Rounsaville B, Tate K, Rohatgi A, Bunkenburg B, Cathey J, Kim S, Ruf D. High efficiency inline diffused emitter (ILDE) solar cells on mono-crystalline CZ silicon Progress in Photovoltaics: Research and Applications. 18: 590-595. DOI: 10.1002/Pip.982 |
0.499 |
|
| 2009 |
Stavola M, Jiang F, Kleekajai S, Wen L, Peng C, Yelundur V, Rohatgi A, Hahn G, Carnel L, Kalejs J. Hydrogen Passivation of Defects in Crystalline Silicon Solar Cells Mrs Proceedings. 1210. DOI: 10.1557/Proc-1210-Q01-01 |
0.759 |
|
| 2009 |
Kang MH, Kim DS, Ebong A, Rounsaville B, Rohatgi A, Okoniewska G, Hong J. The Study of Silane-Free SiC[sub x]N[sub y] Film for Crystalline Silicon Solar Cells Journal of the Electrochemical Society. 156: H495. DOI: 10.1149/1.3116225 |
0.454 |
|
| 2009 |
Renshaw J, Kang MH, Meemongkolkiat V, Rohatgi A, Carlson D, Bennett M. 3D-modeling of a back point contact solar cell structure with a selective emitter Conference Record of the Ieee Photovoltaic Specialists Conference. 000375-000379. DOI: 10.1109/PVSC.2009.5411661 |
0.789 |
|
| 2009 |
Das A, Meemongkolkiat V, Kim DS, Ramanathan S, Rohatgi A. 20% Efficient screen printed boron BSF cells using spin-on dielectric passivation Conference Record of the Ieee Photovoltaic Specialists Conference. 000477-000481. DOI: 10.1109/PVSC.2009.5411641 |
0.782 |
|
| 2009 |
Upadhyaya A, Yelundur V, Ramanathan S, Lai JH, Upadhyaya V, Rohatgi A, IKoehler. Enhanced front and rear dielectric passivation for commercially grown czochralski silicon for high efficiency solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 001754-001757. DOI: 10.1109/PVSC.2009.5411457 |
0.771 |
|
| 2009 |
Ramanathan S, Meemongkolkiat V, Das A, Rohatgi A, Koehler I. Fabrication of 20 % efficient cells using spin-on based simultaneous diffusion and dielectric anneal Conference Record of the Ieee Photovoltaic Specialists Conference. 002150-002153. DOI: 10.1109/PVSC.2009.5411413 |
0.807 |
|
| 2009 |
Kleekajai S, Wen L, Peng C, Stavola M, Yelundur V, Nakayashiki K, Rohatgi A, Kalejs J. Infrared study of the concentration of H introduced into Si by the postdeposition annealing of a SiNx coating Journal of Applied Physics. 106. DOI: 10.1063/1.3267317 |
0.826 |
|
| 2009 |
Stavola M, Kleekajai S, Wen L, Peng C, Yelundur V, Rohatgi A, Carnel L, Kalejs J. IR characterization of hydrogen in crystalline silicon solar cells Physica B: Condensed Matter. 404: 5066-5070. DOI: 10.1016/J.Physb.2009.08.226 |
0.755 |
|
| 2008 |
Xiu Y, Zhang S, Yelundur V, Rohatgi A, Hess DW, Wong CP. Superhydrophobic and low light reflectivity silicon surfaces fabricated by hierarchical etching. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 10421-6. PMID 18710271 DOI: 10.1021/La801206M |
0.719 |
|
| 2008 |
Ristow A, Begović M, Pregelj A, Rohatgi A. Development of a methodology for improving photovoltaic inverter reliability Ieee Transactions On Industrial Electronics. 55: 2581-2592. DOI: 10.1109/Tie.2008.924017 |
0.758 |
|
| 2008 |
Ramanathan S, Meemongkolkiat V, Rohatgi A. Spin-on based process for simultaneous diffusion and passivation for high efficiency LBSF solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922685 |
0.812 |
|
| 2008 |
Sheoran M, Kim DS, Rohatgi A, Dekkers HFW, Beaucarne G, Young M, Asher S. Hydrogen diffusion in silicon from PECVD silicon nitride Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922638 |
0.799 |
|
| 2008 |
Das A, Kim DS, Meemongkolkiat V, Rohatgi A. 19% efficient screen- printed cells using a passivated transparent boron back surface field Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922437 |
0.784 |
|
| 2008 |
Sheoran M, Kim DS, Rohatgi A, Dekkers HFW, Beaucarne G, Young M, Asher S. Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature Applied Physics Letters. 92. DOI: 10.1063/1.2917467 |
0.798 |
|
| 2008 |
Sheoran M, Upadhyaya A, Rohatgi A. Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabrication Solid-State Electronics. 52: 612-617. DOI: 10.1016/J.Sse.2007.10.001 |
0.84 |
|
| 2008 |
Ebong A, Rohatgi A, Zhang W. Understanding the role of impurity level in the screen-printed front silver paste for high sheet resistance emitter silicon solar cells Proceedings - 2008 International Symposium On Microelectronics, Imaps 2008. 1013-1015. |
0.349 |
|
| 2007 |
Kim DS, Meemongkolkiat V, Ebong A, Rounsaville B, Upadhyaya V, Das A, Rohatgi A. 2D-modeling and development of interdigitated back contact solar cells on low-cost substrates Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 2: 1417-1420. DOI: 10.1109/WCPEC.2006.279718 |
0.797 |
|
| 2007 |
Ebong A, Upadhyaya V, Rounsaville B, Kim DS, Meemongkolkiat V, Rohatgi A, Al-Jassim MM, Jones KM, To B. Rapid thermal processing of high efficiency N-type silicon solar cells with AL back junction Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 2: 1376-1379. DOI: 10.1109/WCPEC.2006.279688 |
0.803 |
|
| 2007 |
Ebong A, Upadhyaya V, Rounsaville B, Kim DS, Tate K, Rohatgi A. 18% large area screen-printed solar cells on textured MCZ silicon with high sheet resistance emitter Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 2: 1326-1329. DOI: 10.1109/WCPEC.2006.279675 |
0.442 |
|
| 2007 |
Sheoran M, Upadhyaya A, Rounsaville B, Dong SK, Rohatgi A, Narayanan S. Investigation of the effect of resistivity and thickness on the performance of cast multicrystalline silicon solar cells Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 2: 1308-1311. DOI: 10.1109/WCPEC.2006.279654 |
0.82 |
|
| 2007 |
Upadhyaya A, Sheoran M, Ristow A, Rohatgi A, Narayanan S, Roncin S. Greater than 16% efficient screen printed solar cells on 115-170 μm thick cast multicrystalline silicon Conference Record of the 2006 Ieee 4th World Conference On Photovoltaic Energy Conversion, Wcpec-4. 1: 1052-1055. DOI: 10.1109/WCPEC.2006.279321 |
0.82 |
|
| 2007 |
Pregelj A, Begovic M, Rohatgi A. Recloser allocation for improved reliability of DG-enhanced distribution networks 2007 Ieee Power Engineering Society General Meeting, Pes. DOI: 10.1109/Tpwrs.2006.876649 |
0.73 |
|
| 2006 |
Kim DS, Hilali MM, Rohatgi A, Nakano K, Hariharan A, Matthei K. Development of a phosphorus spray diffusion system for low-cost silicon solar cells Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2202088 |
0.79 |
|
| 2006 |
Meemongkolkiat V, Nakayashiki K, Kim DS, Kopecek R, Rohatgi A. Factors limiting the formation of uniform and thick aluminum-back-surface field and its potential Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2129106 |
0.801 |
|
| 2006 |
Hilali MM, Nakayashiki K, Khadilkar C, Reedy RC, Rohatgi A, Shaikh A, Kim S, Sridharan S. Effect of Ag particle size in thick-film Ag paste on the electrical and physical properties of screen printed contacts and silicon solar cells Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2126579 |
0.815 |
|
| 2006 |
Sheoran M, Upadhyaya A, Rohatgi A. A comparison of bulk lifetime, efficiency, and light-induced degradation in boron- and gallium-doped cast mc-Si solar cells Ieee Transactions On Electron Devices. 53: 2764-2772. DOI: 10.1109/Ted.2006.883675 |
0.842 |
|
| 2006 |
Kleekajai S, Jiang F, Stavola M, Yelundur V, Nakayashiki K, Rohatgi A, Hahn G, Seren S, Kalejs J. Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells Journal of Applied Physics. 100. DOI: 10.1063/1.2363684 |
0.825 |
|
| 2006 |
Nakayashiki K, Rousaville B, Yelundur V, Kim DS, Rohatgi A, Clark-Phelps R, Hanoka JI. Fabrication and analysis of high-efficiency String Ribbon Si solar cells Solid-State Electronics. 50: 1406-1412. DOI: 10.1016/J.Sse.2006.06.011 |
0.856 |
|
| 2006 |
Kim DS, Yelundur V, Nakayashiki K, Rounsaville B, Meemongkolkiat V, Gabor AM, Rohatgi A. Ribbon Si solar cells with efficiencies over 18% by hydrogenation of defects Solar Energy Materials and Solar Cells. 90: 1227-1240. DOI: 10.1016/J.Solmat.2005.07.008 |
0.84 |
|
| 2006 |
Hilali MM, Sridharan S, Khadilkar C, Shaikh A, Rohatgi A, Steve KIM. Effect of glass frit chemistry on the physical and electrical properties of thick-film Ag contacts for silicon solar cells Journal of Electronic Materials. 35: 2041-2047. DOI: 10.1007/S11664-006-0311-X |
0.768 |
|
| 2006 |
Hilali MM, Nakayashiki K, Ebong A, Rohatgi A. High-efficiency (19%) screen-printed textured cells on low-resistivity float-zone silicon with high sheet-resistance emitters Progress in Photovoltaics: Research and Applications. 14: 135-144. DOI: 10.1002/Pip.688 |
0.841 |
|
| 2006 |
Meemongkolkiat V, Nakayashiki K, Rohatgi A, Crabtree G, Nickerson J, Jester TL. Resistivity and lifetime variation along commercially grown Ga- and B-doped czochralski Si ingots and its effect on light-induced degradation and performance of solar cells Progress in Photovoltaics: Research and Applications. 14: 125-134. DOI: 10.1002/Pip.659 |
0.827 |
|
| 2005 |
Hilali MM, Al-Jassim MM, To B, Moutinho H, Rohatgi A, Asher S. Understanding the formation and temperature dependence of thick-film Ag contacts on high-sheet-resistance Si emitters for solar cells Journal of the Electrochemical Society. 152. DOI: 10.1149/1.2001507 |
0.779 |
|
| 2005 |
Nakayashiki K, Meemongkolkiat V, Rohatgi A. Effect of material inhomogeneity on the open-circuit voltage of string ribbon Si solar cells Ieee Transactions On Electron Devices. 52: 2243-2249. DOI: 10.1109/Ted.2005.856789 |
0.824 |
|
| 2005 |
Meemongkolkiat V, Nakayashiki K, Rohatgi A, Crabtree G, Nickerson J, Jester TL. The effect of the variation in resistivity and lifetime on the solar cells performance along the commercially grown Ga- and B-doped czochralski ingots Conference Record of the Ieee Photovoltaic Specialists Conference. 1115-1118. DOI: 10.1109/PVSC.2005.1488331 |
0.803 |
|
| 2005 |
Rohatgi A, Upadhyaya A, Sheoran M. Erratum: “High-efficiency screen-printed belt co-fired solar cells on cast multicrystalline silicon” [Appl. Phys. Lett. 86, 054103 (2005)] Applied Physics Letters. 86: 149901. DOI: 10.1063/1.1886246 |
0.804 |
|
| 2005 |
Upadhyaya A, Sheoran M, Rohatgi A. High-efficiency screen-printed belt co-fired solar cells on cast multicrystalline silicon Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1855429 |
0.848 |
|
| 2005 |
Nakayashiki K, Rohatgi A, Ostapenko S, Tarasov I. Minority-carrier lifetime enhancement in edge-defined film-fed grown Si through rapid thermal processing-assisted reduction of hydrogen-defect dissociation Journal of Applied Physics. 97. DOI: 10.1063/1.1833577 |
0.806 |
|
| 2005 |
Nakayashiki K, Meemongkolkiat V, Rohatgi A. High efficiency screen-printed EFG Si solar cells through rapid thermal processing-induced bulk lifetime enhancement Progress in Photovoltaics: Research and Applications. 13: 17-25. DOI: 10.1002/Pip.569 |
0.852 |
|
| 2005 |
Upadhyaya A, Sheoran M, Rohatgi A. Study of direct PECVD sin X-induced surface emitter and bulk defect passivation in P-type silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1273-1276. |
0.833 |
|
| 2005 |
Hilali MM, Nakayashiki K, Ebong A, Rohatgi A. Investigation of high-efficiency screen-printed textured Si solar cells with high sheet-resistance emitters Conference Record of the Ieee Photovoltaic Specialists Conference. 1185-1188. |
0.848 |
|
| 2005 |
Kim DS, Gabor AM, Rohatgi A. String Ribbon silicon solar cells with 17.8 % efficiency Journal of the Korean Physical Society. 47: 157-162. |
0.457 |
|
| 2005 |
Yelundur V, Nakayashiki K, Hilali M, Rohatgi A. Implementation of a homogeneous high-sheet-resistance emitter in multicrystalline silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 959-962. |
0.851 |
|
| 2004 |
Pregelj A, Begovic M, Rohatgi A. Quantitative techniques for analysis of large data sets in renewable distributed generation 2004 Ieee Pes Power Systems Conference and Exposition. 2: 892. DOI: 10.1109/Tpwrs.2004.831278 |
0.738 |
|
| 2004 |
Hilali MM, Rohatgi A, Asher S. Development of screen-printed silicon solar cells with high fill factors on 100 Ω/sq emitters Ieee Transactions On Electron Devices. 51: 948-955. DOI: 10.1109/Ted.2004.828280 |
0.805 |
|
| 2004 |
Tarasov I, Ostapenko S, Nakayashiki K, Rohatgi A. Defect passivation in multicrystalline silicon for solar cells Applied Physics Letters. 85: 4346-4348. DOI: 10.1063/1.1815380 |
0.79 |
|
| 2004 |
Rohatgi A, Hilali MM, Nakayashiki K. High-efficiency screen-printed solar cell on edge-defined film-fed grown ribbon silicon through optimized rapid belt co-firing of contacts and high-sheet-resistance emitter Applied Physics Letters. 84: 3409-3411. DOI: 10.1063/1.1737069 |
0.844 |
|
| 2004 |
Rohatgi A, Kim DS, Nakayashiki K, Yelundur V, Rounsaville B. High-efficiency solar cells on edge-defined film-fed grown (18.2%) and string ribbon (17.8%) silicon by rapid thermal processing Applied Physics Letters. 84: 145-147. DOI: 10.1063/1.1638636 |
0.842 |
|
| 2004 |
Tarasov I, Dybiec M, Ostapenko S, Rohatgi A, Yelundur V, Gabor AM. Scanning room temperature photoluminescence in SiNx:H layers Epj Applied Physics. 27: 289-291. DOI: 10.1051/Epjap:2004046 |
0.715 |
|
| 2003 |
Pregelj A, Begovic M, Rohatgi A, Novosel D. On optimization of reliability of distributed generation-enhanced feeders Proceedings of the 36th Annual Hawaii International Conference On System Sciences, Hicss 2003. DOI: 10.1109/HICSS.2003.1173897 |
0.718 |
|
| 2003 |
Jiang F, Stavola M, Rohatgi A, Kim D, Holt J, Atwater H, Kalejs J. Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si Applied Physics Letters. 83: 931-933. DOI: 10.1063/1.1598643 |
0.427 |
|
| 2003 |
Rohatgi A, Jeong JW. High-efficiency screen-printed silicon ribbon solar cells by effective defect passivation and rapid thermal processing Applied Physics Letters. 82: 224-226. DOI: 10.1063/1.1536027 |
0.674 |
|
| 2003 |
Brody J, Rohatgi A, Ristow A. Review and comparison of equations relating bulk lifetime and surface recombination velocity to effective lifetime measured under flash lamp illumination Solar Energy Materials and Solar Cells. 77: 293-301. DOI: 10.1016/S0927-0248(02)00350-1 |
0.754 |
|
| 2003 |
Meemongkolkiat V, Hilali M, Rohatgi A. Investigation of RTP and belt fired screen printed AL-BSF on textured and planar back surfaces of silicon solar cells Proceedings of the 3rd World Conference On Photovoltaic Energy Conversion. 1467-1470. |
0.782 |
|
| 2002 |
Yelundur V, Rohatgi A, Jeong JW, Hanoka JI. Improved string ribbon silicon solar cell performance by rapid thermal firing of screen-printed contacts Ieee Transactions On Electron Devices. 49: 1405-1410. DOI: 10.1109/Ted.2002.801248 |
0.821 |
|
| 2002 |
Ruby DS, Zaidi SH, Narayanan S, Damiani BM, Rohatgi A. Rie-texturing of multicrystalline silicon solar cells Solar Energy Materials and Solar Cells. 74: 133-137. DOI: 10.1016/S0927-0248(02)00057-0 |
0.819 |
|
| 2002 |
Rohatgi A, Yelundur V, Jeong J, Ebong A, Rosenblum MD, Hanoka JI. Fundamental understanding and implementation of Al-enhanced PECVD SiNx hydrogenation in silicon ribbons Solar Energy Materials and Solar Cells. 74: 117-126. DOI: 10.1016/S0927-0248(02)00055-7 |
0.811 |
|
| 2002 |
Ebong A, Cho Y, Hilali M, Rohatgi A, Ruby D. Rapid thermal technologies for high-efficiency silicon solar cells Solar Energy Materials and Solar Cells. 74: 51-55. DOI: 10.1016/S0927-0248(02)00047-8 |
0.784 |
|
| 2002 |
Brody J, Rohatgi A. Sensitivity analysis of two-spectrum separation of surface and bulk components of minority carrier lifetimes Solid-State Electronics. 46: 859-866. DOI: 10.1016/S0038-1101(01)00343-4 |
0.541 |
|
| 2002 |
Damiani B, Ristow A, Ebong A, Rohatgi A. Design optimization for higher stabilized efficiency and reduced light-induced degradation in boron-doped Czochralski silicon solar cells Progress in Photovoltaics: Research and Applications. 10: 185-193. DOI: 10.1002/Pip.405 |
0.843 |
|
| 2002 |
Brody J, Rohatgi A. Comparison of dielectric surface passivation of monocrystalline and multicrystalline silicon Conference Record of the Ieee Photovoltaic Specialists Conference. 243-246. |
0.627 |
|
| 2002 |
Pregelj A, Begovic M, Rohatgi A. Impact of inverter configuration on PV system reliability and energy production Conference Record of the Ieee Photovoltaic Specialists Conference. 1388-1391. |
0.731 |
|
| 2002 |
Damiani B, Hilali M, Rohatgi A. Light induced degradation in Czochralski silicon during illuminated high temperature processing Conference Record of the Ieee Photovoltaic Specialists Conference. 348-351. |
0.308 |
|
| 2002 |
Bowden S, Yelundur V, Rohatgi A. Implied-Voc and Suns-Voc measurements in multicrystalline solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 371-374. |
0.699 |
|
| 2001 |
Begovic M, Pregelj A, Rohatgi A, Honsberg C. Green power: Status and perspectives Proceedings of the Ieee. 89: 1734-1743. DOI: 10.1109/5.975897 |
0.713 |
|
| 2001 |
Jeong JW, Rohatgi A, Yelundur V, Ebong A, Rosenblum MD, Kalejs JP. Enhanced silicon solar cell performance by rapid thermal firing of screen-printed metals Ieee Transactions On Electron Devices. 48: 2836-2841. DOI: 10.1109/16.974713 |
0.798 |
|
| 2001 |
Meier D, Davis H, Garcia R, Salami J, Rohatgi A, Ebong A, Doshi P. Aluminum alloy back p–n junction dendritic web silicon solar cell Solar Energy Materials and Solar Cells. 65: 621-627. DOI: 10.1016/S0927-0248(00)00150-1 |
0.483 |
|
| 2001 |
Ebong A, Brody J, Rohatgi A, Williams T. Optimization of front metal contact firing scheme to achieve high fill factors on screen printed silicon solar cells Solar Energy Materials and Solar Cells. 65: 613-619. DOI: 10.1016/S0927-0248(00)00149-5 |
0.658 |
|
| 2001 |
Hilali M, Ebong A, Rohatgi A, Meier DL. Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon Solid-State Electronics. 45: 1973-1978. DOI: 10.1016/S0038-1101(01)00253-2 |
0.791 |
|
| 2001 |
Brody J, Rohatgi A. Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon Solid-State Electronics. 45: 1549-1557. DOI: 10.1016/S0038-1101(01)00169-1 |
0.553 |
|
| 2001 |
Yelundur V, Rohatgi A, Ebong A, Gabor AM, Hanoka J, Wallace RL. Al-enhanced PECVD SiNx induced hydrogen passivation in string ribbon silicon Journal of Electronic Materials. 30: 526-531. DOI: 10.1007/S11664-001-0093-0 |
0.775 |
|
| 2001 |
Ebong A, Hilali M, Rohatgi A, Meier D, Ruby DS. Belt furnace gettering and passivation ofn-web silicon for high-efficiency screen-printed front-surface-field solar cells Progress in Photovoltaics: Research and Applications. 9: 327-332. DOI: 10.1002/Pip.381 |
0.786 |
|
| 2001 |
Brody J, Rohatgi A, Yelundur V. Bulk resistivity optimization for low-bulk-lifetime silicon solar cells Progress in Photovoltaics: Research and Applications. 9: 273-285. DOI: 10.1002/Pip.380 |
0.799 |
|
| 2001 |
Begovic M, Pregelj A, Rohatgi A, Novosel D. Impact of renewable distributed generation on power systems Proceedings of the Hawaii International Conference On System Sciences. 47. |
0.718 |
|
| 2000 |
Begović M, Pregelj A, Rohatgi A. Four-year performance assessment of the 342 KW PV system at Georgia tech Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 1575-1578. DOI: 10.1109/PVSC.2000.916198 |
0.725 |
|
| 2000 |
Damiani BM, Lüdemann R, Ruby DS, Zaidi SH, Rohatgi A. Development of rie-textured silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 371-374. DOI: 10.1109/PVSC.2000.915843 |
0.837 |
|
| 2000 |
Lüdemann R, Damiani BM, Rohatgi A. Novel processing of solar cells with porous silicon texturing Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 299-302. DOI: 10.1109/PVSC.2000.915819 |
0.844 |
|
| 2000 |
Ebong A, Hillali M, Rohatgi A. Rapid photo-assisted forming gas anneal (FGA) for high quality screen-printed contacts for silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 264-267. DOI: 10.1109/PVSC.2000.915808 |
0.403 |
|
| 2000 |
Yelundur V, Rohatgi A, Jeong JW, Gabor AM, Hanoka JI, Wallace RL. PECVD SINx induced hydrogen passivation in String Ribbon silicon Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 91-94. DOI: 10.1109/PVSC.2000.915760 |
0.752 |
|
| 2000 |
Jeong JW, Rohatgi A, Rosenblum MD, Kalejs JP. Lifetime enhancement in EFG multicrystalline silicon Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 83-86. DOI: 10.1109/PVSC.2000.915758 |
0.321 |
|
| 2000 |
Rohatgi A, Doshi P, Moschner J, Lauinger T, Aberle A, Ruby D. Comprehensive study of rapid, low-cost silicon surface passivation technologies Ieee Transactions On Electron Devices. 47: 987-993. DOI: 10.1109/16.841230 |
0.51 |
|
| 2000 |
Jeong J, Rosenblum MD, Kalejs JP, Rohatgi A. Hydrogenation of defects in edge-defined film-fed grown aluminum-enhanced plasma enhanced chemical vapor deposited silicon nitride multicrystalline silicon Journal of Applied Physics. 87: 7551-7557. DOI: 10.1063/1.373427 |
0.644 |
|
| 2000 |
Rohatgi A, Ebong A, Yelundur V, Ristow A. Rapid thermal processing of next generation silicon solar cells Progress in Photovoltaics: Research and Applications. 8: 515-527. DOI: 10.1002/1099-159X(200009/10)8:5<515::Aid-Pip351>3.0.Co;2-Q |
0.845 |
|
| 1999 |
Rohatgi A, Narasimha S, Ebong A, Doshi P. Understanding and implementation of rapid thermal technologies for high-efficiency silicon solar cells Ieee Transactions On Electron Devices. 46: 1970-1977. DOI: 10.1109/16.791984 |
0.555 |
|
| 1999 |
Narasimha S, Rohatgi A, Weeber AW. An optimized rapid aluminum back surface field technique for silicon solar cells Ieee Transactions On Electron Devices. 46: 1363-1370. DOI: 10.1109/16.772477 |
0.525 |
|
| 1999 |
Venkataraman S, Singh R, Parihar V, Poole KF, Rohatgi A, Yeludur V, Ebong A. A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing Journal of Electronic Materials. 28: 1394-1398. DOI: 10.1007/S11664-999-0128-5 |
0.391 |
|
| 1999 |
Rohatgi A, Doshi P, Ebong A, Narasimha S, Krygowski T, Moschner J. Rapid processing of low-cost, high-efficiency silicon solar cells Bulletin of Materials Science. 22: 383-390. DOI: 10.1007/Bf02749946 |
0.549 |
|
| 1998 |
Rohatgi A, Moschner J, Green MA. Comments on "17.3% Efficiency Metal-oxide-semiconductor (MOS) Solar Cells With Liquid-phase-deposited Silicon Dioxide" Ieee Electron Device Letters. 19: 447-447. DOI: 10.1109/Led.1998.728908 |
0.432 |
|
| 1998 |
Narasimha S, Rohatgi A. Fabrication and characterization of 18.6% Efficient multicrystalline silicon solar cells Ieee Transactions On Electron Devices. 45: 1776-1783. DOI: 10.1109/16.704378 |
0.477 |
|
| 1998 |
Doshi P, Rohatgi A. 18% Efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation Ieee Transactions On Electron Devices. 45: 1710-1716. DOI: 10.1109/16.704369 |
0.447 |
|
| 1998 |
Krygowski T, Rohatgi A. A simultaneously diffused, textured, in situ oxide ar-coated solar cell process (STAR Process) for high-efficiency silicon solar cells Ieee Transactions On Electron Devices. 45: 194-199. DOI: 10.1109/16.658830 |
0.379 |
|
| 1998 |
Cai L, Rohatgi A, Han S, May G, Zou M. Investigation of the properties of plasma-enhanced chemical vapor deposited silicon nitride and its effect on silicon surface passivation Journal of Applied Physics. 83: 5885-5889. DOI: 10.1063/1.367450 |
0.442 |
|
| 1998 |
Narasimha S, Rohatgi A. Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/plasma silicon nitride stack Applied Physics Letters. 72: 1872-1874. DOI: 10.1063/1.121211 |
0.392 |
|
| 1998 |
Singh R, Parihar V, Venkataraman S, Poole K, Thakur R, Rohatgi A. Changing from rapid thermal processing to rapid photothermal processing: what does it buy for a particular technology? Materials Science in Semiconductor Processing. 1: 219-230. DOI: 10.1016/S1369-8001(98)00042-0 |
0.358 |
|
| 1998 |
Jellison GE, Modine FA, Doshi P, Rohatgi A. Spectroscopic ellipsometry characterization of thin-film silicon nitride Thin Solid Films. 313: 193-197. DOI: 10.1016/S0040-6090(97)00816-X |
0.385 |
|
| 1998 |
Narasimha S, Crotty G, Rohatgi A, Meier D. Back surface field effects in the 17.3% efficient n-type dendritic web silicon solar cells Solid-State Electronics. 42: 1631-1640. DOI: 10.1016/S0038-1101(98)00096-3 |
0.494 |
|
| 1997 |
Doshi P, Jellison GE, Rohatgi A. Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics. Applied Optics. 36: 7826-37. PMID 18264309 DOI: 10.1364/Ao.36.007826 |
0.367 |
|
| 1997 |
Li K, Feng ZC, Wee ATS, Chou HC, Lin JY, Kamra S, Tan KL, Rohatgi A, Zhou L, Li SFY. Several Efficiency Influencing Factors In CdTe/CdS Solar Cells Mrs Proceedings. 485. DOI: 10.1557/Proc-485-197 |
0.416 |
|
| 1997 |
Doolittle WA, Rohatgi A, Ahrenkiel R, Levi D, Augustine G, Hopkins RH. Understanding The Role Of Defects In Limiting The Minority Carrier Lifetime In Sic Mrs Proceedings. 483. DOI: 10.1557/Proc-483-197 |
0.392 |
|
| 1997 |
Vedagarbha V, Singh R, Ratakonda D, Vedula L, Rohatgi A, Narayanan S. Exploitation of Quantum Photoeffects in Reducing Microscopic Defects and Processing Cycle Time in Advanced Rapid Thermal Processing Mrs Proceedings. 470. DOI: 10.1557/Proc-470-425 |
0.419 |
|
| 1997 |
Vedula L, Singh R, Ratakonda D, Rohatgi A, Narayanan S. Defect Reduction and Improved Device Performance using Rapid Isothermal Diffusion in Silicon Mrs Proceedings. 469. DOI: 10.1557/Proc-469-437 |
0.386 |
|
| 1997 |
Krygowski T, Rohatgi A. A novel approach toward the simultaneous diffusion of boron and phosphorus in silicon Journal of the Electrochemical Society. 144: 346-349. DOI: 10.1149/1.1837407 |
0.442 |
|
| 1997 |
Doshi P, Mejia J, Tate K, Rohatgi A. Modeling and characterization of high-efficiency silicon solar cells fabricated by rapid thermal processing, screen printing, and plasma-enhanced chemical vapor deposition Ieee Transactions On Electron Devices. 44: 1417-1424. DOI: 10.1109/16.622596 |
0.545 |
|
| 1997 |
Cai L, Rohatgi A. Effect of post-PECVD photo-assisted anneal on multicrystalline silicon solar cells Ieee Transactions On Electron Devices. 44: 97-103. DOI: 10.1109/16.554799 |
0.394 |
|
| 1997 |
Singh R, Cherukuri KC, Vedula L, Rohatgi A, Narayanan S. Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing Applied Physics Letters. 70: 1700-1702. DOI: 10.1063/1.118674 |
0.382 |
|
| 1997 |
Li K, Wee ATS, Lin J, Tan KL, Zhou L, Li SFY, Feng ZC, Chou HC, Kamra S, Rohatgi A. A microstructural study on the surface and interface of CdTe/CdS solar cells Journal of Materials Science: Materials in Electronics. 8: 125-132. DOI: 10.1023/A:1018529726498 |
0.385 |
|
| 1997 |
Rohatgi A, Narasimha S. Design, fabrication, and analysis of greater than 18% efficient multicrystalline silicon solar cells Solar Energy Materials and Solar Cells. 48: 187-197. DOI: 10.1016/S0927-0248(97)00102-5 |
0.578 |
|
| 1997 |
Wallace RL, Hanoka JI, Rohatgi A, Crotty G. Thin silicon string ribbon Solar Energy Materials and Solar Cells. 48: 179-186. DOI: 10.1016/S0927-0248(97)00101-3 |
0.505 |
|
| 1997 |
Singh R, Cherukuri KC, Vedula L, Rohatgi A, Mejia J, Narayanan S. Enhanced diffusion and improved device performance using dual spectral source rapid thermal processing Journal of Electronic Materials. 26: 1422-1427. DOI: 10.1007/S11664-997-0061-4 |
0.396 |
|
| 1997 |
Narasimha S, Rohatgi A. Optimized aluminum back surface field techniques for silicon solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 63-66. |
0.356 |
|
| 1996 |
Singh R, Sharangpani R, Cherukuri KC, Chen Y, Dawson DM, Poole KF, Rohatgi A, Narayanan S, Thakur RPS. How Rapid Isothermal Processing Can be a Dominant Semiconductor Processing Technology in the 21st Century Mrs Proceedings. 429. DOI: 10.1557/Proc-429-81 |
0.357 |
|
| 1996 |
Coles AX, Gerhardt RA, Rohatgi A. Optimization of porous silicon reflectance for solar cell applications Materials Research Society Symposium - Proceedings. 426: 557-562. DOI: 10.1557/Proc-426-557 |
0.519 |
|
| 1996 |
Doshi P, Mejia J, Tate K, Rohatgi A. Integration of screen-printing and rapid thermal processing technologies for silicon solar cell fabrication Ieee Electron Device Letters. 17: 404-406. DOI: 10.1109/55.511589 |
0.505 |
|
| 1996 |
Rohatgi A, Narasimha S, Kamra S, Khattak C. Fabrication and analysis of record high 18.2% efficient solar cells on multicrystalline silicon material Ieee Electron Device Letters. 17: 401-403. DOI: 10.1109/55.511588 |
0.518 |
|
| 1996 |
Feng ZC, Chou HC, Rohatgi A, Lim GK, Wee ATS, Tan KL. Correlations between CdTe/CdS/SnO2/glass solar cell performance and the interface/surface properties Journal of Applied Physics. 79: 2151-2153. DOI: 10.1063/1.361041 |
0.432 |
|
| 1996 |
Sopori BL, Deng X, Benner JP, Rohatgi A, Sana P, Estreicher SK, Park YK, Roberson MA. Hydrogen in silicon: A discussion of diffusion and passivation mechanisms Solar Energy Materials and Solar Cells. 41: 159-169. DOI: 10.1016/0927-0248(95)00098-4 |
0.405 |
|
| 1996 |
Chou HC, Rohatgi A, Jokerst NM, Kamra S, Stock SR, Lowrie SL, Ahrenkiel RK, Levi DH. Approach toward high efficiency CdTe/CdS heterojunction solar cells Materials Chemistry and Physics. 43: 178-182. DOI: 10.1016/0254-0584(95)01626-6 |
0.37 |
|
| 1996 |
Cai L, Han S, May G, Kamra S, Krygowski T, Rohatgi A. Optimization of saturation current density of PECVD SiN coated phosphorus diffused emitters using neural network modeling Journal of Electronic Materials. 25: 1784-1789. DOI: 10.1007/S11664-996-0036-X |
0.45 |
|
| 1996 |
Feng ZC, Rohatgi A, Tin CC, Hu R, Wee ATS, Se KP. Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition Journal of Electronic Materials. 25: 917-923. DOI: 10.1007/Bf02666658 |
0.333 |
|
| 1996 |
Chou HC, Rohatgi A, Jokerst NM, Thomas EW, Kamra S. Copper migration in cdte heterojunction solar cells Journal of Electronic Materials. 25: 1093-1098. DOI: 10.1007/Bf02659909 |
0.348 |
|
| 1995 |
Lee J, Chen Z, Allen M, Rohatgi A, Arya R. A miniaturized high-voltage solar cell array as an electrostatic MEMS power supply Journal of Microelectromechanical Systems. 4: 102-108. DOI: 10.1109/84.465125 |
0.452 |
|
| 1995 |
Pang SK, Smith AW, Rohatgi A. Effect of Trap Location and Trap-Assisted Auger Recombination on Silicon Solar Cell Performance Ieee Transactions On Electron Devices. 42: 662-668. DOI: 10.1109/16.372065 |
0.508 |
|
| 1995 |
Augustine G, Rohatgi A, Jokerst NM, Dhere R. Concentration-dependent near and above band edge absorption in doped InP and its effect on solar cell modeling Journal of Applied Physics. 78: 2666-2670. DOI: 10.1063/1.360128 |
0.37 |
|
| 1995 |
Elgamel HE, Barnett AM, Rohatgi A, Chen Z, Vinckier C, Nijs J, Mertens R. Efficient combination of surface and bulk passivation schemes of high‐efficiency multicrystalline silicon solar cells Journal of Applied Physics. 78: 3457-3461. DOI: 10.1063/1.359977 |
0.425 |
|
| 1995 |
Ramanachalam MS, Rohatgi A, Carter WB, Schaffer JP, Gupta TK. Photoluminescence study of ZnO varistor stability Journal of Electronic Materials. 24: 413-419. DOI: 10.1007/Bf02659707 |
0.308 |
|
| 1994 |
Feng ZC, Chen Z, Padmanabhan KR, Li K, Wee ATS, Lin J, Tan KL, Yue KT, Bhat A, Rohatgi A. Combined Optical, Surface and Nuclear Microscopic Assessment of Porous Silicon Formed in HF-Acetonitrile Mrs Proceedings. 358. DOI: 10.1557/Proc-358-345 |
0.439 |
|
| 1994 |
Yasutake K, Chen Z, Pang SK, Rohatgi A. Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO 2-Si interface Journal of Applied Physics. 75: 2048-2054. DOI: 10.1063/1.356307 |
0.448 |
|
| 1994 |
Rohatgi A, Chen Z, Doshi P, Pham T, Ruby D. High‐efficiency silicon solar cells by rapid thermal processing Applied Physics Letters. 65: 2087-2089. DOI: 10.1063/1.112801 |
0.495 |
|
| 1994 |
Chen Z, Rohatgi A, Bell RO, Kalejs JP. Defect passivation in multicrystalline‐Si materials by plasma‐enhanced chemical vapor deposition of SiO2/SiN coatings Applied Physics Letters. 65: 2078-2080. DOI: 10.1063/1.112798 |
0.484 |
|
| 1994 |
Sana P, Rohatgi A, Kalejs JP, Bell RO. Gettering and hydrogen passivation of edge‐defined film‐fed grown multicrystalline silicon solar cells by Al diffusion and forming gas anneal Applied Physics Letters. 64: 97-99. DOI: 10.1063/1.110880 |
0.451 |
|
| 1994 |
Rohatgi A, Chen Z, Sana P, Crotty J, Salami J. High efficiency multicrystalline silicon solar cells Solar Energy Materials and Solar Cells. 34: 227-236. DOI: 10.1016/0927-0248(94)90044-2 |
0.474 |
|
| 1994 |
Leguijt C, Lölgen P, Eikelboom JA, Amesz PH, Steeman RA, Sinke WC, Sarro PM, Verhoef LA, Michiels PP, Chen ZH, Rohatgi A. Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride Solar Energy Materials and Solar Cells. 34: 177-181. DOI: 10.1016/0927-0248(94)90038-8 |
0.466 |
|
| 1994 |
Chou HC, Bhat AK, Kamra S, Rohatgi A. An investigation of photocurrent loss due to reflectance and absorption in CdTe/CdS heterojunction solar cells Journal of Electronic Materials. 23: 681-686. DOI: 10.1007/Bf02653356 |
0.325 |
|
| 1994 |
Chou HC, Rohatgi A. The impact of MOCVD growth ambient on carrier transport, defects, and performance of CdTe/CdS heterojunction solar cells Journal of Electronic Materials. 23: 31-37. DOI: 10.1007/Bf02651264 |
0.381 |
|
| 1994 |
Chen Z, Rohatgi A, Ruby D. Silicon surface and bulk defect passivation by low temperature PECVD oxides and nitrides Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1331-1334. |
0.397 |
|
| 1993 |
Sana P, Salami J, Rohatgi A. Fabrication and Analysis of High-Efficiency Polycrystalline Silicon Solar Cells Ieee Transactions On Electron Devices. 40: 1461-1468. DOI: 10.1109/16.223706 |
0.496 |
|
| 1993 |
Chen Z, Sana P, Salami J, Rohatgi A. A Novel and Effective PECVD SiO2/SiN Antireflection Coating for Si Solar Cells Ieee Transactions On Electron Devices. 40: 1161-1165. DOI: 10.1109/16.214744 |
0.459 |
|
| 1993 |
Chen Z, Pang SK, Yasutake K, Rohatgi A. Plasma-enhanced chemical-vapor-deposited oxide for low surface recombination velocity and high effective lifetime in silicon Journal of Applied Physics. 74: 2856-2859. DOI: 10.1063/1.354638 |
0.443 |
|
| 1993 |
Chen Z, Yasutake K, Doolittle A, Rohatgi A. Record low SiO2/Si interface state density for low temperature oxides prepared by direct plasma-enhanced chemical vapor deposition Applied Physics Letters. 63: 2117-2119. DOI: 10.1063/1.110558 |
0.436 |
|
| 1993 |
Smith AW, Rohatgi A. A new texturing geometry for producing high efficiency solar cells with no antireflection coatings Solar Energy Materials and Solar Cells. 29: 51-65. DOI: 10.1016/0927-0248(93)90091-G |
0.411 |
|
| 1993 |
Smith AW, Rohatgi A. Ray tracing analysis of the inverted pyramid texturing geometry for high efficiency silicon solar cells Solar Energy Materials and Solar Cells. 29: 37-49. DOI: 10.1016/0927-0248(93)90090-P |
0.404 |
|
| 1993 |
Rohatgi A, Weber ER, Kimerling LC. Opportunities in silicon photovoltaics and defect control in photovoltaic materials Journal of Electronic Materials. 22: 65-72. DOI: 10.1007/Bf02665725 |
0.379 |
|
| 1992 |
Augustine G, Rohatgi A, Jokerst NM. Base Doping Optimization for Radiation-Hard Si, GaAs. and InP Solar Cells Ieee Transactions On Electron Devices. 39: 2395-2400. DOI: 10.1109/16.158814 |
0.491 |
|
| 1992 |
Rohatgi A. A STUDY OF EFFICIENCY LIMITING DEFECTS IN POLYCRYSTALLINE CdTe/CdS SOLAR CELLS International Journal of Solar Energy. 12: 37-49. DOI: 10.1080/01425919208909749 |
0.334 |
|
| 1992 |
Augustine G, Jokerst NM, Rohatgi A. Single-crystal thin film InP: Fabrication and absorption measurements Applied Physics Letters. 61: 1429-1431. DOI: 10.1063/1.107560 |
0.326 |
|
| 1991 |
Pang SK, Rohatgi A. Effect of oxygen concentration on lifetime in magnetic czochrolski silicon Journal of the Electrochemical Society. 138: 523-527. DOI: 10.1149/1.2085622 |
0.315 |
|
| 1991 |
Ringel SA, Rohatgi A. The Effects of Trap-Induced Lifetime Variations on the Design and Performance of High-Efficiency GaAs Solar Cells Ieee Transactions On Electron Devices. 38: 2402-2409. DOI: 10.1109/16.97400 |
0.444 |
|
| 1991 |
Ringel SA, Smith AW, MacDougal MH, Rohatgi A. The effects of CdCl2 on the electronic properties of molecular-beam epitaxially grown CdTe/CdS heterojunction solar cells Journal of Applied Physics. 70: 881-889. DOI: 10.1063/1.349652 |
0.45 |
|
| 1991 |
Ramanachalam MS, Rohatgi A, Schaffer JP, Gupta TK. Characterization of ZnO varistor degradation using lifetime positron‐annihilation spectroscopy Journal of Applied Physics. 69: 8380-8386. DOI: 10.1063/1.347402 |
0.323 |
|
| 1991 |
Pang SK, Rohatgi A. Record high recombination lifetime in oxidized magnetic Czochralski silicon Applied Physics Letters. 59: 195-197. DOI: 10.1063/1.106407 |
0.374 |
|
| 1991 |
Rohatgi A, Schaffer J, Augustine G, Ramanachalam M. A review of selected techniques for characterizing radiation-induced defects in solar cells Solar Cells. 31: 379-394. DOI: 10.1016/0379-6787(91)90106-Y |
0.351 |
|
| 1991 |
Rohatgi A, Sudharsanan R, Ringel SA, MacDougal MH. Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells Solar Cells. 30: 109-122. DOI: 10.1016/0379-6787(91)90043-O |
0.457 |
|
| 1991 |
Sudharsanan R, Rohatgi A. Investigation of metalorganic chemical vapor deposition grown CdTe/CdS solar cells Solar Cells. 31: 143-150. DOI: 10.1016/0379-6787(91)90017-J |
0.464 |
|
| 1991 |
Augustine G, Rohatgi A, Jokerst NM. Optimization of base doping for radiation hard InP solar cells . 60-63. |
0.31 |
|
| 1990 |
Ringel SA, Sudharsanan R, Rohatgi A, Owens MS, Giilis HP. Effects of annealing and surface preparation on the properties of poiycrystalline CdZnTe films grown by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2012-2019. DOI: 10.1116/1.576798 |
0.393 |
|
| 1989 |
Ringel SA, Rohatgi A, Tobin SP. An Approach Toward 25-Percent Efficient GaAs Heteroface Solar Cells Ieee Transactions On Electron Devices. 36: 1230-1237. DOI: 10.1109/16.30927 |
0.447 |
|
| 1989 |
Feng ZC, Perkowitz S, Sudharsanan R, Erbil A, Pollard KT, Rohatgi A, Bradshaw JL, Choyke WJ. Photoluminescence of Cd1−xMnxTe films grown by metalorganic chemical vapor deposition Journal of Applied Physics. 66: 1711-1716. DOI: 10.1063/1.344391 |
0.328 |
|
| 1989 |
Gupta TK, Straub WD, Ramanachalam MS, Schaffer JP, Rohatgi A. Grain‐boundary characterization of ZnO varistors by positron annihilation spectroscopy Journal of Applied Physics. 66: 6132-6137. DOI: 10.1063/1.343596 |
0.311 |
|
| 1989 |
Rohatgi A, Ringel SA, Sudharsanan R, Meyers PV, Liu CH, Ramanathan V. Investigation of polycrystalline CdZnTe, CdMnTe, and CdTe films for photovoltaic applications Solar Cells. 27: 219-230. DOI: 10.1016/0379-6787(89)90030-6 |
0.465 |
|
| 1989 |
Sudharsanan R, Feng ZC, Perkowitz S, Rohatgi A, Pollard KT, Erbil A. Characterization of MOCVD-grown CdMnTe films by infrared spectroscopy Journal of Electronic Materials. 18: 453-455. DOI: 10.1007/Bf02657994 |
0.307 |
|
| 1989 |
Schaffer JP, Rohatgi A, DeWald AB, Frost RL, Pang SK. Positron annihilation spectroscopy: applications to Si, ZnO, and multilayer semiconductor structures Journal of Electronic Materials. 18: 737-744. DOI: 10.1007/Bf02657527 |
0.418 |
|
| 1988 |
DeWald AB, Frost RL, Ringel SA, Schaffer JP, Rohatgi A, Nielsen B, Lynn KG. Positron annihilation spectroscopy of AlGaAs/GaAs interfaces in metalorganic chemical vapor deposition grown GaAs heterojunction solar cellsa) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2248-2252. DOI: 10.1116/1.575019 |
0.422 |
|
| 1988 |
Feng ZC, Sudharsanan R, Perkowitz S, Erbil A, Pollard KT, Rohatgi A. Raman scattering characterization of high‐quality Cd1−xMnxTe films grown by metalorganic chemical vapor deposition Journal of Applied Physics. 64: 6861-6863. DOI: 10.1063/1.341977 |
0.308 |
|
| 1988 |
Rohatgi A, Pang SK, Gupta TK, Straub WD. The deep level transient spectroscopy studies of a ZnO varistor as a function of annealing Journal of Applied Physics. 63: 5375-5379. DOI: 10.1063/1.340355 |
0.353 |
|
| 1988 |
Rohatgi A. High efficiency silicon solar cells Solar Cells. 23: 273-274. DOI: 10.1016/0379-6787(88)90106-8 |
0.509 |
|
| 1988 |
Rohatgi A, Ringel SA, Welch J, Meeks E, Pollard K, Erbil A, Summers CJ, Meyers PV, Liu CH. Growth and characterization of CdMnTe and CdZnTe polycrystalline thin films for solar cells Solar Cells. 24: 185-194. DOI: 10.1016/0379-6787(88)90048-8 |
0.345 |
|
| 1988 |
Frost R, Dewald A, Schaffer J, Rohatgi A, Nielsen B, Lynn K. Slow positron annihilation spectroscopy of heterojunctions and homojunctions of GaAs-based semiconductor thin films Thin Solid Films. 166: 349-357. DOI: 10.1016/0040-6090(88)90397-5 |
0.368 |
|
| 1988 |
Dawless R, Troup R, Meier D, Rohatgi A. Production of extreme-purity aluminum and silicon by fractional crystallization processing Journal of Crystal Growth. 89: 68-74. DOI: 10.1016/0022-0248(88)90073-5 |
0.37 |
|
| 1988 |
Ringel SA, Rohatgi A. Material quality and design optimization for high efficiency GaAs solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1: 666-671. |
0.373 |
|
| 1988 |
Augustine G, Smith AW, Rohatgi A, Keavney CJ. Characterization and modeling of InP solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 903-908. |
0.373 |
|
| 1987 |
Rohatgi A. STATUS AND DIRECTIONS IN HIGH EFFICIENCY SILICON SOLAR CELL RESEARCH Solar Cells. 21: 450. |
0.389 |
|
| 1986 |
Rohatgi A, Rai-Choudhury P, Fonash SJ, Caplan PJ, Lester P, Poindexter EH, Singh R. Characterization and control of silicon surface modification produced by CCl4reactive ion etching Journal of the Electrochemical Society. 133: 408-416. DOI: 10.1149/1.2108588 |
0.391 |
|
| 1986 |
Rohatgi A. Review of high efficiency silicon solar cells Proceedings of Spie - the International Society For Optical Engineering. 706: 15-21. DOI: 10.1117/12.937227 |
0.398 |
|
| 1986 |
Rohatgi A, Rai-Choudhury P. An approach toward 20-percent-efficient silicon solar cells Ieee Transactions On Electron Devices. 33: 1-7. DOI: 10.1109/T-Ed.1986.22428 |
0.475 |
|
| 1986 |
Singh R, Fonash SJ, Rohatgi A. Interaction of low-energy implanted atomic H with slow and fast diffusing metallic impurities in Si Applied Physics Letters. 49: 800-802. DOI: 10.1063/1.97551 |
0.388 |
|
| 1986 |
Mu XC, Fonash SJ, Rohatgi A, Rieger J. Comparison of the damage and contamination produced by CF4 and CF4/H2 reactive ion etching: The role of hydrogen Applied Physics Letters. 48: 1147-1149. DOI: 10.1063/1.96452 |
0.338 |
|
| 1986 |
Sinharoy S, Hoffman RA, Rohatgi A, Farrow RFC, Rieger JH. Epitaxial growth of LaF3on GaAs(111) Journal of Applied Physics. 59: 273-275. DOI: 10.1063/1.336825 |
0.343 |
|
| 1986 |
Rohatgi A, Meier DL, Rai-Choudhury P, Fonash SJ, Singh R. Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells Journal of Applied Physics. 59: 4167-4171. DOI: 10.1063/1.336676 |
0.406 |
|
| 1986 |
Rohatgi A, Rai-Choudhury P. High-efficiency silicon solar cells: Development, current issues and future directions Solar Cells. 17: 119-133. DOI: 10.1016/0379-6787(86)90062-1 |
0.51 |
|
| 1986 |
Hopkins RH, Rohatgi A. Impurity effects in silicon for high efficiency solar cells Journal of Crystal Growth. 75: 67-79. DOI: 10.1016/0022-0248(86)90226-5 |
0.509 |
|
| 1985 |
Fonash SJ, Singh R, Rohatgi A, Rai‐Choudhury P, Caplan PJ, Poindexter EH. Silicon damage caused by CCl4reactive ion etching: Its characterization and removal by rapid thermal annealing Journal of Applied Physics. 58: 862-866. DOI: 10.1063/1.336156 |
0.371 |
|
| 1985 |
Mu XC, Fonash SJ, Yang BY, Vedam K, Rohatgi A, Rieger J. Ar ion beam and CCl4 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen Journal of Applied Physics. 58: 4282-4291. DOI: 10.1063/1.335513 |
0.309 |
|
| 1985 |
Rohatgi A. HIGH-EFFICIENCY SILICON SOLAR CELLS - OPPORTUNITY AND CHALLENGE Proceedings of Spie - the International Society For Optical Engineering. 543: 20-27. |
0.394 |
|
| 1985 |
Rohatgi A. REVIEW OF HIGH-EFFICIENCY SILICON SOLAR CELLS Conference Record of the Ieee Photovoltaic Specialists Conference. 7-13. |
0.386 |
|
| 1984 |
Rohatgi A, Rai-Choudhury P. Design, Fabrication, and Analysis of 17-18-Percent Efficient Surface-Passivated Silicon Solar Cells Ieee Transactions On Electron Devices. 31: 596-601. DOI: 10.1109/T-Ed.1984.21574 |
0.541 |
|
| 1984 |
Singh R, Fonash SJ, Rohatgi A, Choudhury PR, Gigante J. A low-temperature process for annealing extremely shallow As +-implanted n+/p junctions in silicon Journal of Applied Physics. 55: 867-870. DOI: 10.1063/1.333183 |
0.304 |
|
| 1984 |
Rohatgi A, Federmann EF. Importance and considerations of high efficiency solar cells Solar Cells. 12: 177-183. DOI: 10.1016/0379-6787(84)90075-9 |
0.448 |
|
| 1983 |
Rohatgi A, Davis J, Hopkins R, McMullin P. A study of grown-in impurities in silicon by deep-level transient spectroscopy Solid-State Electronics. 26: 1039-1051. DOI: 10.1016/0038-1101(83)90001-1 |
0.359 |
|
| 1982 |
Ta LB, Hobgood HM, Rohatgi A, Thomas RN. Effects of stoichiometry on thermal stability of undoped, semi-insulating GaAs Journal of Applied Physics. 53: 5771-5775. DOI: 10.1063/1.331412 |
0.351 |
|
| 1982 |
Davis JR, Hopkins RH, Rohatgi A. DEFINITIONS OF SOLAR GRADE SILICON Proceedings - the Electrochemical Society. 82: 14-25. |
0.324 |
|
| 1981 |
Loh K, Schroder D, Clarke R, Rohatgi A, Eldridge G. Low leakage current GaAs diodes Ieee Transactions On Electron Devices. 28: 796-800. DOI: 10.1109/T-Ed.1981.20433 |
0.344 |
|
| 1981 |
Rohatgi A, Hopkins RH, Davis JR. The Properties of Polycrystalline Silicon Solar Cells with Controlled Titanium Additions Ieee Transactions On Electron Devices. 28: 103-108. DOI: 10.1109/T-Ed.1981.20289 |
0.457 |
|
| 1980 |
Davis JR, Rohatgi A, Hopkins RH, Blais PD, Rai-Choudhury P, McCormick JR, Mollenkopf HC. Impurities in silicon solar cells Ieee Transactions On Electron Devices. 27: 677-687. DOI: 10.1109/T-Ed.1980.19922 |
0.413 |
|
| 1980 |
Rohatgi A, Davis J, Hopkins R, Rai-Choudhury P, McMullin P, McCormick J. Effect of titanium, copper and iron on silicon solar cells Solid-State Electronics. 23: 415-422. DOI: 10.1016/0038-1101(80)90076-3 |
0.408 |
|
| 1980 |
Rohatgi A, Hopkins R, Davis J, Campbell R, Mollenkopf H. The impact of molybdenum on silicon and silicon solar cell performance Solid-State Electronics. 23: 1185-1190. DOI: 10.1016/0038-1101(80)90032-5 |
0.484 |
|
| 1979 |
Chen JW, Milnes AG, Rohatgi A. Titanium in silicon as a deep level impurity Solid State Electronics. 22: 801-808. DOI: 10.1016/0038-1101(79)90130-8 |
0.375 |
|
| 1977 |
Rohatgi A, Butler SR, Feigl FJ, Kraner HW, Jones KW. Sodium passivation in HCl oxide films on Si Applied Physics Letters. 30: 104-106. DOI: 10.1063/1.89305 |
0.36 |
|
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