☰

Griff L. Bilbro - Publications

Affiliations: 
Electrical Engineering North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

37 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Bilbro GL, Trew RJ. A Five-Parameter Model of the AlGaN/GaN HFET Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2394376  0.42
2014 Goswami A, Trew RJ, Bilbro GL. Modeling of the gate leakage current in AlGaN/GaN HFETs Ieee Transactions On Electron Devices. 61: 1014-1021. DOI: 10.1109/Ted.2014.2302797  0.424
2014 Goswami A, Trew RJ, Bilbro GL. Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors Journal of Applied Physics. 116. DOI: 10.1063/1.4900581  0.408
2013 Hou D, Bilbro GL, Trew RJ. A compact physical AlGaN/GaN HFET model Ieee Transactions On Electron Devices. 60: 639-645. DOI: 10.1109/Ted.2012.2227323  0.583
2013 Goswami A, Trew RJ, Bilbro GL. Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs Solid-State Electronics. 80: 23-27. DOI: 10.1016/J.Sse.2012.10.005  0.405
2012 Hou D, Bilbro GL, Trew RJ. Analytic model for conduction current in AlGaN/GaN HFETs/HEMTs Active and Passive Electronic Components. 2012. DOI: 10.1155/2012/806253  0.557
2012 Schimizzi RD, Trew RJ, Bilbro GL. A simplified physical model of RF channel breakdown in AlGaN/GaN HFETs Ieee Transactions On Electron Devices. 59: 2973-2978. DOI: 10.1109/Ted.2012.2211360  0.674
2010 Schimizzi RD, Trew RJ, Bilbro GL. Space-charge-limited current transport in nitride HFETs Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2426-2428. DOI: 10.1002/Pssc.200983866  0.67
2009 Bilbro GL, Hou D, Yin H, Trew RJ. Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model Proceedings of Spie - the International Society For Optical Engineering. 7216. DOI: 10.1117/12.803348  0.363
2009 Smith JR, Bilbro GL, Nemanich RJ. Theory of space charge limited regime of thermionic energy converter with negative electron affinity emitter Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 27: 1132-1141. DOI: 10.1116/1.3125282  0.341
2008 Trew RJ, Liu Y, Kuang W, Bilbro GL. Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.764958  0.309
2008 Yin H, Hou D, Bilbro GL, Trew RJ. Harmonie balance simulation of a new physics based model of the AlGaN/GaN HFET Ieee Mtt-S International Microwave Symposium Digest. 1425-1428. DOI: 10.1109/MWSYM.2008.4633046  0.305
2008 Trew RJ, Kuang W, Liu Y, Bilbro GL. Widebandgap semiconductor HFET models for microwave CAD 2008 European Microwave Integrated Circuit Conference, Eumic 2008. 286-289. DOI: 10.1109/EMICC.2008.4772285  0.338
2008 Trew J, Kuang W, Liu Y, Bilbro GL. Time-dependent RF performance degradation modeling of AlGaN/GaN HFETs 2008 17th International Conference On Microwaves, Radar and Wireless Communications, Mikon 2008.  0.561
2007 Trew RJ, Liu Y, Bilbro GL, Kuang WW, Vetury R, Shealy JB. Space-charge limited current and nonlinear source resistance in microwave AlGaN/GaN HFET's 16th International Conference On Microwaves, Radar and Wireless Communications, Mikon 2006. DOI: 10.1109/MIKON.2006.4345093  0.352
2007 Smith JR, Bilbro GL, Nemanich RJ. Considerations for a high-performance thermionic energy conversion device based on a negative electron affinity emitter Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.245327  0.345
2006 Weiwei K, Trew RJ, Bilbro GL, Yueying L. The influence of device structure on high-electric-field effects and reliability of AlGaN/GaN HFETs Materials Research Society Symposium Proceedings. 955: 79-84. DOI: 10.1557/Proc-0955-I14-01  0.409
2006 Shakouri A, Bian Z, Singh R, Zhang Y, Vashaee D, Humphrey TE, Schmidt H, Zide JM, Zeng G, Bahk JH, Gossard AC, Bowers JE, Rawat V, Sands TD, Kim W, ... ... Bilbro GL, et al. Solid-state and vacuum thermionic energy conversion Materials Research Society Symposium Proceedings. 886: 245-260. DOI: 10.1557/Proc-0886-F07-01  0.367
2006 Liu Y, Trew RJ, Bilbro GL, Kuang W, Yin H. Linearity limitations of AlGaN/GaN HFET's Ieee Wireless and Microwave Technology Conference, Wamicon 2006. DOI: 10.1109/WAMICON.2006.351914  0.301
2006 Kuang W, Trew RJ, Bilbro GL, Liu Y, Yin H. Impedance anomalies and RF performance limitations in AlGaN/GaN HFET's Ieee Wireless and Microwave Technology Conference, Wamicon 2006. DOI: 10.1109/WAMICON.2006.351912  0.322
2006 Trew RJ, Liu Y, Bilbro GL, Kuang W, Vetury R, Shealy JB. Nonlinear source resistance in high-voltage microwave alGaN/gaN HFETs Ieee Transactions On Microwave Theory and Techniques. 54: 2061-2066. DOI: 10.1109/Tmtt.2006.873627  0.575
2006 Trew RJ, Liu Y, Kuang WW, Bilbro GL. The physics of reliability for high voltage AlGaN/GaN HFET's Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 103-106. DOI: 10.1109/CSICS.2006.319925  0.316
2006 Bilbro GL, Trew RJ. RF knee walkout and source access region of unpassivated HFETs Electronics Letters. 42: 1425-1426. DOI: 10.1049/El:20062113  0.343
2006 Smith JR, Bilbro GL, Nemanich RJ. Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion devices Diamond and Related Materials. 15: 2082-2085. DOI: 10.1016/J.Diamond.2006.09.011  0.404
2006 Smith JR, Nemanich RJ, Bilbro GL. The effect of Schottky barrier lowering and nonplanar emitter geometry on the performance of a thermionic energy converter Diamond and Related Materials. 15: 870-874. DOI: 10.1016/J.Diamond.2005.12.057  0.371
2005 Rying EA, Öztürk MC, Bilbro GL, Lu JC. In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and wavelets Ieee Transactions On Semiconductor Manufacturing. 18: 112-120. DOI: 10.1109/Tsm.2004.836660  0.66
2005 Trew RJ, Bilbro GL, Kuang W, Liu Y, Yin H. Microwave AlGaN/GaN HFETs Ieee Microwave Magazine. 6: 56-66. DOI: 10.1109/Mmw.2005.1417998  0.574
2002 Rying EA, Bilbro GL, Lu JC. Focused local learning with wavelet neural networks. Ieee Transactions On Neural Networks / a Publication of the Ieee Neural Networks Council. 13: 304-19. PMID 18244433 DOI: 10.1109/72.991417  0.66
2002 Bilbro GL. Theory of nanotip formation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 757-761. DOI: 10.1116/1.1467659  0.313
1999 Hatfield CW, Bilbro GL. Simulation of thermionic emission from aluminum gallium nitride cathodes at elevated temperatures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 1987-1992. DOI: 10.1116/1.590858  0.347
1999 Hatfield CW, Bilbro GL. Simulation of room temperature thermionic emission from AlxGa1-xN negative electron affinity cathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 552-556. DOI: 10.1116/1.590592  0.32
1999 Bilbro GL, Hall LC, Clements M, Liu W. Convolution, deconvolution, and mean field annealing suitable for analog VLSI Ieee Transactions On Circuits and Systems Ii: Analog and Digital Signal Processing. 46: 120-128. DOI: 10.1109/82.752912  0.306
1998 Hatfield CW, Bilbro GL, Allen ST, Palmour JW. DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K Ieee Transactions On Electron Devices. 45: 2072-2074. DOI: 10.1109/16.711376  0.314
1993 Skaggs SG, Gerber J, Bilbro G, Steer MB. Parameter Extraction of Microwave Transistors using a Hybrid Gradient Descent and Tree Annealing Approach Ieee Transactions On Microwave Theory and Techniques. 41: 726-729. DOI: 10.1109/22.231673  0.308
1992 Stoneking DE, Bilbro GL, Trew RJ, Gilmore PA, Kelley CT. Yield Optimization Using a GaAs Process Simulator Coupled to a Physical Device Model Ieee Transactions On Microwave Theory and Techniques. 40: 1353-1363. DOI: 10.1109/22.146318  0.396
1991 Groshong BR, Bilbro GL, Snyder WE. An eddy current transducer model for image restoration Journal of Nondestructive Evaluation. 10: 55-61. DOI: 10.1007/Bf00568100  0.366
1990 Bilbro GL, Steer MB, Trew RJ, Chang CR, Skaggs SG. Extraction of the Parameters of Equivalent Circuits of Microwave Transistors Using Tree Annealing Ieee Transactions On Microwave Theory and Techniques. 38: 1711-1718. DOI: 10.1109/22.60019  0.342
Show low-probability matches.