Zlatko Sitar - Publications

Affiliations: 
Materials Science and Engineering North Carolina State University, Raleigh, NC 
Area:
Materials Science Engineering

201 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Dycus JH, Mirrielees KJ, Grimley ED, Kirste R, Mita S, Sitar Z, Collazo R, Irving D, LeBeau JM. Structure of Ultra-thin Native Oxides on III-Nitride Surfaces. Acs Applied Materials & Interfaces. PMID 29558103 DOI: 10.1021/acsami.8b00845  0.72
2016 Huang L, Li G, Gurarslan A, Yu Y, Kirste R, Guo W, Zhao J, Collazo R, Sitar Z, Parsons GN, Kudenov M, Cao L. Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers. Acs Nano. PMID 27483193 DOI: 10.1021/acsnano.6b02195  0.72
2016 Lamprecht M, Grund C, Neuschl B, Thonke K, Bryan Z, Collazo R, Sitar Z. Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state Journal of Applied Physics. 119. DOI: 10.1063/1.4946828  1
2016 Bryan I, Bryan Z, Mita S, Rice A, Tweedie J, Collazo R, Sitar Z. Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Journal of Crystal Growth. 438: 81-89. DOI: 10.1016/j.jcrysgro.2015.12.022  1
2015 Majkić A, Puc U, Franke A, Kirste R, Collazo R, Sitar Z, Zgonik M. Optical properties of aluminum nitride single crystals in the THz region Optical Materials Express. 5: 2106-2111. DOI: 10.1364/OME.5.002106  1
2015 Bryan Z, Bryan I, Kirste R, Collazo R, Sitar Z. Status and challenges in deep UV semiconductor lasers 2015 Ieee Summer Topicals Meeting Series, Sum 2015. 123-124. DOI: 10.1109/PHOSST.2015.7248225  1
2015 Reddy P, Bryan I, Bryan Z, Tweedie J, Washiyama S, Kirste R, Mita S, Collazo R, Sitar Z. Charge neutrality levels, barrier heights, and band offsets at polar AlGaN Applied Physics Letters. 107. DOI: 10.1063/1.4930026  1
2015 Haidet BB, Bryan I, Reddy P, Bryan Z, Collazo R, Sitar Z. A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN Journal of Applied Physics. 117. DOI: 10.1063/1.4923062  1
2015 Bryan Z, Bryan I, Mita S, Tweedie J, Sitar Z, Collazo R. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4922385  1
2015 Bryan Z, Bryan I, Xie J, Mita S, Sitar Z, Collazo R. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4917540  1
2015 Guo W, Kirste R, Bryan Z, Bryan I, Gerhold M, Collazo R, Sitar Z. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes Journal of Applied Physics. 117. DOI: 10.1063/1.4915903  1
2015 Guo W, Kirste R, Bryan I, Bryan Z, Hussey L, Reddy P, Tweedie J, Collazo R, Sitar Z. KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode Applied Physics Letters. 106. DOI: 10.1063/1.4913705  1
2014 Hoffmann MP, Tweedie J, Kirste R, Bryan Z, Bryan I, Gerhold M, Sitar Z, Collazo R. Point defect management in GaN by Fermi-level control during growth Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2041018  1
2014 Reddy P, Bryan I, Bryan Z, Tweedie J, Kirste R, Collazo R, Sitar Z. Schottky contact formation on polar and non-polar AlN Journal of Applied Physics. 116. DOI: 10.1063/1.4901954  1
2014 Bryan I, Bryan Z, Bobea M, Hussey L, Kirste R, Collazo R, Sitar Z. Homoepitaxial AlN thin films deposited on m-plane (1100) AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4897233  1
2014 Reddy P, Bryan I, Bryan Z, Guo W, Hussey L, Collazo R, Sitar Z. The effect of polarity and surface states on the Fermi level at III-nitride surfaces Journal of Applied Physics. 116. DOI: 10.1063/1.4896377  1
2014 Bryan Z, Bryan I, Bobea M, Hussey L, Kirste R, Sitar Z, Collazo R. Exciton transitions and oxygen as a donor in m -plane AlN homoepitaxial films Journal of Applied Physics. 115. DOI: 10.1063/1.4870284  1
2014 Hussey L, Bryan I, Kirste R, Guo W, Bryan Z, Mita S, Collazo R, Sitar Z. Direct observation of the polarity control mechanism in aluminum nitride grown on sapphire by aberration corrected scanning transmission electron microscopy Microscopy and Microanalysis. 20: 162-163. DOI: 10.1017/S1431927614002530  1
2014 Kuittinen T, Tuomisto F, Kumagai Y, Nagashima T, Kinoshita T, Koukitu A, Collazo R, Sitar Z. Vacancy defects in UV-transparent HVPE-AlN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 405-407. DOI: 10.1002/pssc.201300529  1
2014 Bryan I, Akouala CR, Tweedie J, Bryan Z, Rice A, Kirste R, Collazo R, Sitar Z. Surface preparation of non-polar single-crystalline AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 454-457. DOI: 10.1002/pssc.201300401  1
2013 Freedman JP, Leach JH, Preble EA, Sitar Z, Davis RF, Malen JA. Universal phonon mean free path spectra in crystalline semiconductors at high temperature. Scientific Reports. 3: 2963. PMID 24129328 DOI: 10.1038/srep02963  1
2013 Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. 103, 013701 (2013)]. Applied Physics Letters. 103: 89902. PMID 24046484 DOI: 10.1063/1.4819200  0.72
2013 Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Kinase detection with gallium nitride based high electron mobility transistors. Applied Physics Letters. 103: 13701. PMID 23918992 DOI: 10.1063/1.4812987  1
2013 Foster CM, Collazo R, Sitar Z, Ivanisevic A. Cell behavior on gallium nitride surfaces: peptide affinity attachment versus covalent functionalization. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 8377-84. PMID 23745578 DOI: 10.1021/la401503b  1
2013 Foster CM, Collazo R, Sitar Z, Ivanisevic A. Aqueous stability of Ga- and N-polar gallium nitride. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 216-20. PMID 23227805 DOI: 10.1021/la304039n  1
2013 Rigler M, Zgonik M, Hoffmann MP, Kirste R, Bobea M, Collazo R, Sitar Z, Mita S, Gerhold M. Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4800554  1
2013 Bobea M, Tweedie J, Bryan I, Bryan Z, Rice A, Dalmau R, Xie J, Collazo R, Sitar Z. X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN Journal of Applied Physics. 113. DOI: 10.1063/1.4798352  1
2013 Bryan I, Rice A, Hussey L, Bryan Z, Bobea M, Mita S, Xie J, Kirste R, Collazo R, Sitar Z. Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4792694  1
2012 Railsback JG, Singh A, Pearce RC, McKnight TE, Collazo R, Sitar Z, Yingling YG, Melechko AV. Weakly charged cationic nanoparticles induce DNA bending and strand separation. Advanced Materials (Deerfield Beach, Fla.). 24: 4261-5. PMID 22711427 DOI: 10.1002/adma.201104891  1
2012 Hussey L, Mita S, Xie J, Guo W, Akouala CR, Rajan J, Bryan I, Collazo R, Sitar Z. Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition Journal of Applied Physics. 112. DOI: 10.1063/1.4768526  1
2012 Freitas JA, Sitar Z, Kumagai Y, Meissener E. Preface Journal of Crystal Growth. 350: 1. DOI: 10.1016/j.jcrysgro.2011.12.011  1
2012 Tweedie J, Collazo R, Rice A, Mita S, Xie J, Akouala RC, Sitar Z. Schottky barrier and interface chemistry for Ni contacted to Al 0.8Ga 0.2N grown on c-oriented AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 584-587. DOI: 10.1002/pssc.201100435  1
2011 Paisley EA, Losego MD, Gaddy BE, Tweedie JS, Collazo R, Sitar Z, Irving DL, Maria JP. Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions. Nature Communications. 2: 461. PMID 21897372 DOI: 10.1038/ncomms1470  1
2011 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. Fermi level effect on strain of Si-doped GaN Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.878726  1
2011 Xie J, Mita S, Hussey L, Rice A, Tweedie J, Lebeau J, Collazo R, Sitar Z. On the strain in n-type GaN Applied Physics Letters. 99. DOI: 10.1063/1.3647772  1
2011 Xie J, Mita S, Rice A, Tweedie J, Hussey L, Collazo R, Sitar Z. Strain in Si doped GaN and the Fermi level effect Applied Physics Letters. 98. DOI: 10.1063/1.3589978  1
2011 Craft HS, Rice AL, Collazo R, Sitar Z, Maria JP. Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN Applied Physics Letters. 98. DOI: 10.1063/1.3554762  1
2011 Mita S, Collazo R, Rice A, Tweedie J, Xie J, Dalmau R, Sitar Z. Impact of gallium supersaturation on the growth of N-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2078-2080. DOI: 10.1002/pssc.201001063  1
2011 Xie J, Mia S, Dalmau R, Collazo R, Rice A, Tweedie J, Sitar Z. Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2407-2409. DOI: 10.1002/pssc.201001009  1
2011 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Progress on n-type doping of algan alloys on aln single crystal substrates for uv optoelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2031-2033. DOI: 10.1002/pssc.201000964  1
2011 Dalmau R, Moody B, Xie J, Collazo R, Sitar Z. Characterization of dislocation arrays in AlN single crystals grown by PVT Physica Status Solidi (a) Applications and Materials Science. 208: 1545-1547. DOI: 10.1002/pssa.201000957  1
2010 Losego MD, Craft HS, Paisley EA, Mita S, Collazo R, Sitar Z, Maria JP. Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux Journal of Materials Research. 25: 670-679. DOI: 10.1557/JMR.2010.0096  1
2010 Koechlin M, Sulser F, Sitar Z, Poberaj G, Günter P. Free-standing lithium niobate microring resonators for hybrid integrated optics Ieee Photonics Technology Letters. 22: 251-253. DOI: 10.1109/LPT.2009.2038174  1
2010 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. The effect of N-polar GaN domains as Ohmic contacts Applied Physics Letters. 97. DOI: 10.1063/1.3491173  1
2010 Rice A, Collazo R, Tweedie J, Dalmau R, Mita S, Xie J, Sitar Z. Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3467522  1
2010 Tweedie J, Collazo R, Rice A, Xie J, Mita S, Dalmau R, Sitar Z. X-ray characterization of composition and relaxation of Alx Ga1-xN (0<x<1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3457149  1
2010 Herro ZG, Zhuang D, Schlesser R, Sitar Z. Growth of AlN single crystalline boules Journal of Crystal Growth. 312: 2519-2521. DOI: 10.1016/j.jcrysgro.2010.04.005  1
2010 Rice A, Collazo R, Tweedie J, Xie J, Mita S, Sitar Z. Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0≤x≤1) deposition by LP OMVPE Journal of Crystal Growth. 312: 1321-1324. DOI: 10.1016/j.jcrysgro.2009.09.011  1
2010 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity Physica Status Solidi (a) Applications and Materials Science. 207: 45-48. DOI: 10.1002/pssa.200982629  1
2009 Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN bulk crystals in m- and c-orientation Journal of Crystal Growth. 312: 58-63. DOI: 10.1016/j.jcrysgro.2009.10.008  1
2009 Mita S, Collazo R, Sitar Z. Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition Journal of Crystal Growth. 311: 3044-3048. DOI: 10.1016/j.jcrysgro.2009.01.075  1
2009 Ehrentraut D, Sitar Z. Advances in Bulk Crystal Growth of AIN and GaN Mrs Bulletin. 34: 259-265.  1
2008 Craft HS, Collazo R, Losego MD, Sitar Z, Maria JP. Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1507-1510. DOI: 10.1116/1.3000058  1
2008 Losego MD, Craft HS, Mita S, Rice T, Collazo R, Sitar Z, Maria JP. TF004 - Interfacing complex oxides to gallium nitride Ieee International Symposium On Applications of Ferroelectrics. 2. DOI: 10.1109/ISAF.2008.4693846  1
2008 Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Sitar Z. Different optical absorption edges in AlN bulk crystals grown in m- and c -orientations Applied Physics Letters. 93. DOI: 10.1063/1.2996413  1
2008 Mita S, Collazo R, Rice A, Dalmau RF, Sitar Z. Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2952027  1
2008 Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface Applied Physics Letters. 92. DOI: 10.1063/1.2887878  1
2008 Dietz N, Alevli M, Atalay R, Durkaya G, Collazo R, Tweedie J, Mita S, Sitar Z. The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition Applied Physics Letters. 92. DOI: 10.1063/1.2840192  1
2008 Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z. Seeded growth of AlN on SiC substrates and defect characterization Journal of Crystal Growth. 310: 2464-2470. DOI: 10.1016/j.jcrysgro.2008.01.010  1
2008 Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces Journal of Crystal Growth. 310: 51-56. DOI: 10.1016/j.jcrysgro.2007.10.002  1
2008 Cai D, Mecouch WJ, Zheng LL, Zhang H, Sitar Z. Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth International Journal of Heat and Mass Transfer. 51: 1264-1280. DOI: 10.1016/j.ijheatmasstransfer.2007.12.004  1
2008 Collazo R, Mita S, Rice A, Dalmau R, Wellenius P, Muth J, Sitar Z. Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1977-1979. DOI: 10.1002/pssc.200778624  1
2008 Liu F, Collazo R, Mita S, Sitar Z, Pennycook SJ, Duscher G. Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution Advanced Materials. 20: 2162-2165. DOI: 10.1002/adma.200702522  1
2008 Liu F, Collazo R, Mita S, Sitar Z, Duscher G. Three-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots? Advanced Materials. 20: 134-137. DOI: 10.1002/adma.200701288  1
2007 Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z, Coffey DW. Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer Journal of Materials Research. 22: 675-680. DOI: 10.1557/jmr.2007.0077  1
2007 Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial calcium oxide films deposited on gallium nitride surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1029-1032. DOI: 10.1116/1.2710243  1
2007 Collazo R, Mita S, Rice A, Dalmau RF, Sitar Z. Simultaneous growth of a GaN pn lateral polarity junction by polar selective doping Applied Physics Letters. 91. DOI: 10.1063/1.2816893  1
2007 Liu F, Collazo R, Mita S, Sitar Z, Duscher G, Pennycook SJ. The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Applied Physics Letters. 91. DOI: 10.1063/1.2815748  1
2007 Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy Journal of Applied Physics. 102. DOI: 10.1063/1.2785022  1
2007 Davis RF, Bishop SM, Mita S, Collazo R, Reitmeier ZJ, Sitar Z. Epitaxial growth of gallium nitride Aip Conference Proceedings. 916: 520-540. DOI: 10.1063/1.2751931  1
2007 Neuburger M, Aleksov A, Schlesser R, Kohn E, Sitar Z. Electronic high temperature characteristics of AlN Electronics Letters. 43: 592-594. DOI: 10.1049/el:20070275  1
2007 Adekore BT, Callahan MJ, Bouthillette L, Dalmau R, Sitar Z. Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route Journal of Crystal Growth. 308: 71-79. DOI: 10.1016/j.jcrysgro.2007.07.058  1
2007 Cai D, Zheng LL, Zhang H, Zhuang D, Herro ZG, Schlesser R, Sitar Z. Effect of thermal environment evolution on AlN bulk sublimation crystal growth Journal of Crystal Growth. 306: 39-46. DOI: 10.1016/j.jcrysgro.2007.04.037  1
2007 Dalmau R, Collazo R, Mita S, Sitar Z. X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution Journal of Electronic Materials. 36: 414-419. DOI: 10.1007/s11664-006-0044-x  1
2007 Collazo R, Mita S, Dalmau R, Sitar Z. Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2597-2600. DOI: 10.1002/pssc.200674874  1
2007 Mita S, Collazo R, Dalmau R, Sitar Z. Growth of highly resistive Ga-polar GaN by LP-MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2260-2263. DOI: 10.1002/pssc.200674837  1
2007 Li X, Collazo R, Sitar Z. Highly oriented diamond films grown at high growth rate Materials Research Society Symposium Proceedings. 956: 171-176.  1
2006 Craft HS, Collazo R, Sitar Z, Maria JP. Molecular beam epitaxy of Sm 2O 3, Dy 2O 3, and Ho 2O 3 on Si (111) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2105-2110. DOI: 10.1116/1.2216721  1
2006 Craft HS, Ihlefeld JF, Losego MD, Collazo R, Sitar Z, Maria JP. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy Applied Physics Letters. 88. DOI: 10.1063/1.2201041  1
2006 Zhuang D, Herro ZG, Schlesser R, Sitar Z. Seeded growth of AlN single crystals by physical vapor transport Journal of Crystal Growth. 287: 372-375. DOI: 10.1016/j.jcrysgro.2005.11.047  1
2006 Collazo R, Mita S, Aleksov A, Schlesser R, Sitar Z. Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers Journal of Crystal Growth. 287: 586-590. DOI: 10.1016/j.jcrysgro.2005.10.080  1
2006 Herro ZG, Zhuang D, Schlesser R, Collazo R, Sitar Z. Seeded growth of AlN on N- and Al-polar 〈0001〉 AlN seeds by physical vapor transport Journal of Crystal Growth. 286: 205-208. DOI: 10.1016/j.jcrysgro.2005.10.074  1
2006 Li X, Perkins J, Collazo R, Nemanich RJ, Sitar Z. Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD Diamond and Related Materials. 15: 1784-1788. DOI: 10.1016/j.diamond.2006.09.008  1
2006 Robertson J, Kawarada H, Kohn E, Sitar Z. Proceedings of the 16th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (Diamond 2005), Toulouse, France, September 11-16, 2005 Diamond and Related Materials. 15. DOI: 10.1016/j.diamond.2006.05.001  1
2006 Aleksov A, Gobien JM, Li X, Prater JT, Sitar Z. Silicon-on-Diamond - An engineered substrate for electronic applications Diamond and Related Materials. 15: 248-253. DOI: 10.1016/j.diamond.2005.09.012  1
2006 Govindaraju N, Aleksov A, Li X, Okuzumi F, Wolter SD, Collazo R, Prater JT, Sitar Z. Comparative study of textured diamond films by thermal conductivity measurements Applied Physics a: Materials Science and Processing. 85: 331-335. DOI: 10.1007/s00339-006-3697-7  1
2006 Adekore BT, Rakes K, Wang B, Callahan MJ, Pendurti S, Sitar Z. Ammonothermal synthesis of aluminum nitride crystals on group III-nitride templates Journal of Electronic Materials. 35: 1104-1111. DOI: 10.1007/BF02692573  1
2006 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity control of LP-MOVPE GaN using N2 as the carrier gas Materials Research Society Symposium Proceedings. 892: 685-690.  1
2006 Zhuang D, Herro ZG, Li X, Schlesser R, Sitar Z. Wet etching of bulk AlN crystals Materials Research Society Symposium Proceedings. 955: 144-149.  1
2006 Herro ZG, Zhuang D, Schlesser R, Collazo R, Sitar Z. Growth of large AlN single crystals along the [0001] direction Materials Research Society Symposium Proceedings. 892: 499-504.  1
2006 Raghothamachar B, Dalmau R, Dudley M, Schlesser R, Zhuang D, Herro Z, Sitar Z. Structural characterization of bulk AIN single crystals grown from self-seeding and seeding by SiC substrates Materials Science Forum. 527: 1521-1524.  1
2006 Zhuang D, Herro ZG, Schlesser R, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport Journal of Electronic Materials. 35: 1513-1517.  1
2006 Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z. Bulk AlN crystal growth on SiC seeds and defects study Materials Research Society Symposium Proceedings. 955: 411-416.  1
2006 Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z. The effect of aluminum nitride-silicon carbide alloy buffer layers on the sublimation growth of aluminum nitride on SiC (0001) substrates Materials Science Forum. 527: 1497-1500.  1
2005 Wu B, Noveski V, Zhang H, Schlesser R, Mahajan S, Beaudoin S, Sitar Z. Design of an RF-heated bulk AlN growth reactor: Induction heating and heat transfer modeling Crystal Growth and Design. 5: 1491-1498. DOI: 10.1021/cg050014m  1
2005 Freitas JA, Sitar Z. Bulk nitride workshop Journal of Crystal Growth. 281: 1. DOI: 10.1016/j.jcrysgro.2005.04.026  1
2005 Schlesser R, Dalmau R, Zhuang D, Collazo R, Sitar Z. Crucible materials for growth of aluminum nitride crystals Journal of Crystal Growth. 281: 75-80. DOI: 10.1016/j.jcrysgro.2005.03.014  1
2005 Dalmau R, Schlesser R, Rodriguez BJ, Nemanich RJ, Sitar Z. AlN bulk crystals grown on SiC seeds Journal of Crystal Growth. 281: 68-74. DOI: 10.1016/j.jcrysgro.2005.03.012  1
2005 Noveski V, Schlesser R, Raghothamachar B, Dudley M, Mahajan S, Beaudoin S, Sitar Z. Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules Journal of Crystal Growth. 279: 13-19. DOI: 10.1016/j.jcrysgro.2004.12.027  1
2005 Robertson J, Kawarada H, Kohn E, Sitar Z. Proceedings of the 15th European conference on diamond, diamond-like materials, carbon nanotubes, nitrides, and silicon carbide (diamond 2004), Riva del Garda, Italy, September 12-17, 2004 Diamond and Related Materials. 14. DOI: 10.1016/j.diamond.2005.02.003  1
2005 Aleksov A, Li X, Govindaraju N, Gobien JM, Wolter SD, Prater JT, Sitar Z. Silicon-on-diamond: An advanced silicon-on-insulator technology Diamond and Related Materials. 14: 308-313. DOI: 10.1016/j.diamond.2005.01.019  1
2005 Yushin GN, Kvit AV, Sitar Z. Transmission electron microscopy studies of the bonded SiC-SiC interface Journal of Materials Science. 40: 4369-4371. DOI: 10.1007/s10853-005-0779-4  1
2005 Collazo R, Mita S, Schiesser R, Sitar Z. Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy Physica Status Solidi C: Conferences. 2: 2117-2120. DOI: 10.1002/pssc.200461546  1
2005 Mecouch WJ, Reitmeier ZJ, Park JS, Davis RF, Sitar Z. Growth of gallium nitride via iodine vapor phase growth Physica Status Solidi C: Conferences. 2: 2129-2132. DOI: 10.1002/pssc.200461532  1
2005 Dalmau R, Schiesser R, Sitar Z. Polarity and morphology in seeded growth of bulk AlN on SiC Physica Status Solidi C: Conferences. 2: 2036-2039. DOI: 10.1002/pssc.200461511  1
2005 Sitar Z. Fabrication and evaluation of silicon-on-diamond wafers Aiche Annual Meeting, Conference Proceedings. 11258.  1
2005 Zhuang D, Schlesser R, Sitar Z. Grain expansion and subsequent seeded growth of AlN single crystals Materials Research Society Symposium Proceedings. 831: 595-600.  1
2005 Berkman E, Collazo R, Schiesser R, Sitar Z. Growth of GaN from elemental gallium and ammonia via modified sandwich growth technique Materials Research Society Symposium Proceedings. 831: 727-732.  1
2005 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity control of GaN films grown by metal organic chemical vapor deposition on (0001) sapphire substrates Materials Research Society Symposium Proceedings. 831: 167-172.  1
2005 Aleksov A, Wolter SD, Prater JT, Sitar Z. Fabrication and thermal evaluation of silicon on diamond wafers Journal of Electronic Materials. 34: 1089-1094.  1
2005 Raghothamachar B, Dudley M, Dalmau R, Schlesser R, Sitar Z. Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- And 6H-SiC seeds Materials Research Society Symposium Proceedings. 831: 447-452.  1
2005 Mecouch WJ, Rodriguez BJ, Reitmeier ZJ, Park JS, Davis RF, Sitar Z. Initial stages of growth of gallium nitride via iodine vapor phase epitaxy Materials Research Society Symposium Proceedings. 831: 185-190.  1
2005 Li H, Chandrasekaran H, Sunkara MK, Collazo R, Sitar Z, Stukowski M, Rajan K. Self-oriented growth of GaN films on molten gallium Materials Research Society Symposium Proceedings. 831: 703-708.  1
2004 Collazo R, Schlesser R, Sitar Z. High field transport in AlN International Journal of High Speed Electronics and Systems. 14: 155-174. DOI: 10.1142/S0129156404002284  1
2004 Cai D, Wu B, Zheng LL, Zhang H, Mecouch WJ, Sitar Z. Modeling of a gallium nitride epitaxy growth system American Society of Mechanical Engineers, Heat Transfer Division, (Publication) Htd. 375: 133-138. DOI: 10.1115/IMECE2004-59819  1
2004 Strassburg M, Senawiratne J, Dietz N, Haboeck U, Hoffmann A, Noveski V, Dalmau R, Schlesser R, Sitar Z. The growth and optical properties of large, high-quality AlN single crystals Journal of Applied Physics. 96: 5870-5876. DOI: 10.1063/1.1801159  1
2004 Yushin GN, Sitar Z. Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface Applied Physics Letters. 84: 3993-3995. DOI: 10.1063/1.1753065  1
2004 Wolter SD, Borca-Tasciuc D, Chen G, Prater JT, Sitar Z. Processing and thermal properties of highly oriented diamond thin films Thin Solid Films. 469: 105-111. DOI: 10.1016/j.tsf.2004.08.062  1
2004 Brenner DW, Schlesser R, Sitar Z, Dalmau R, Collazo R, Li Y. Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport Surface Science. 560. DOI: 10.1016/j.susc.2004.05.003  1
2004 Noveski V, Schlesser R, Mahajan S, Beaudoin S, Sitar Z. Mass transfer in AlN crystal growth at high temperatures Journal of Crystal Growth. 264: 369-378. DOI: 10.1016/j.jcrysgro.2004.01.028  1
2004 Yushin GN, Aleksov A, Wolter SD, Okuzumi F, Prater JT, Sitar Z. Wafer bonding of highly oriented diamond to silicon Diamond and Related Materials. 13: 1816-1821. DOI: 10.1016/j.diamond.2004.04.007  1
2004 Noveski V, Schlesser R, Mahajan S, Beaudoin S, Sitar Z. Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere Mrs Internet Journal of Nitride Semiconductor Research. 9.  1
2003 Collazo R, Schlesser R, Roskowski A, Miraglia P, Davis RF, Sitar Z. Electron energy distribution during high-field transport in AIN Journal of Applied Physics. 93: 2765-2771. DOI: 10.1063/1.1543633  1
2003 Wolter SD, Yushin GN, Prater JT, Sitar Z. Processing routes for direct bonding of silicon to epitaxially textured diamond Diamond and Related Materials. 12: 257-261. DOI: 10.1016/S0925-9635(02)00392-8  1
2003 Wolter SD, Okuzumi F, Prater JT, Sitar Z. Bias frequency, waveform and duty-cycle effects on the bias-enhanced nucleation of epitaxial diamond Thin Solid Films. 440: 145-151. DOI: 10.1016/S0040-6090(03)00827-7  1
2003 Collazo R, Schlesser R, Sitar Z. Field emission from carbon nanotubes New Diamond and Frontier Carbon Technology. 13: 297-306.  1
2003 Schlesser R, McClure MT, Sitar Z. Mechanisms limiting electron field emission from diamond New Diamond and Frontier Carbon Technology. 13: 285-295.  1
2003 Dalmau R, Raghothamachar B, Dudley M, Schlesser R, Sitar Z. Crucible selection in AlN bulk crystal growth Materials Research Society Symposium - Proceedings. 798: 287-291.  1
2003 Noveski V, Schlesser R, Freitas J, Mahajan S, Beaudoin S, Sitar Z. Vapor phase transport of AlN in an RF heated reactor: Low and high temperature studies Materials Research Society Symposium - Proceedings. 798: 281-286.  1
2003 Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Sitar Z. Transmission electron miscroscopy study of the fused silicon/diamond interface Materials Research Society Symposium - Proceedings. 768: 39-44.  1
2002 Wolter SD, Okuzumi F, Prater JT, Sitar Z. AC vs. DC bias-enhanced nucleation of highly oriented diamond on silicon (100) Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1430720  1
2002 Wu B, Ma R, Zhang H, Dudley M, Schlesser R, Sitar Z. Growth kinetics and thermal stress in AlN bulk crystal growth Asme International Mechanical Engineering Congress and Exposition, Proceedings. 5: 53-63. DOI: 10.1115/IMECE2002-33700  1
2002 Collazo R, Schlesser R, Sitar Z. Experimental observation of electron velocity overshoot in AlN Applied Physics Letters. 81: 5189-5191. DOI: 10.1063/1.1534407  1
2002 Yushin GN, Wolter SD, Kvit AV, Collazo R, Stoner BR, Prater JT, Sitar Z. Study of fusion bonding of diamond to silicon for silicon-on-diamond technology Applied Physics Letters. 81: 3275-3277. DOI: 10.1063/1.1516636  1
2002 Wolter SD, Yushin GN, Okuzumi F, Stoner BR, Prater JT, Sitar Z. Direct fusion bonding of silicon to polycrystalline diamond Diamond and Related Materials. 11: 482-486. DOI: 10.1016/S0925-9635(01)00608-2  1
2002 Collazo R, Schlesser R, Sitar Z. Role of adsorbates in field emission from nanotubes Diamond and Related Materials. 11: 769-773. DOI: 10.1016/S0925-9635(01)00585-4  1
2002 Schlesser R, Dalmau R, Sitar Z. Seeded growth of AlN bulk single crystals by sublimation Journal of Crystal Growth. 241: 416-420. DOI: 10.1016/S0022-0248(02)01319-2  1
2002 Shin H, Thomson DB, Schlesser R, Davis RF, Sitar Z. High temperature nucleation and growth of GaN crystals from the vapor phase Journal of Crystal Growth. 241: 404-415. DOI: 10.1016/S0022-0248(02)01290-3  1
2002 Schlesser R, Sitar Z. Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere Journal of Crystal Growth. 234: 349-353. DOI: 10.1016/S0022-0248(01)01720-1  1
2002 Collazo R, Liang M, Schlesser R, Sitar Z. The role of adsorbates on the field emission properties of single-walled carbon nanotubes Materials Research Society Symposium - Proceedings. 706: 119-124.  1
2002 Schlesser R, Dalmau R, Yakimova R, Sitar Z. Growth of AlN bulk crystals from the vapor phase Materials Research Society Symposium - Proceedings. 693: 545-552.  1
2002 Yushin GN, Kvit AV, Collazo R, Sitar Z. SiC to SiC wafer bonding Materials Research Society Symposium - Proceedings. 742: 91-95.  1
2002 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Electron transport in AlN under high electric fields Materials Research Society Symposium - Proceedings. 693: 437-442.  1
2002 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Observations of electron velocity overshoot during high-field transport in AlN Materials Research Society Symposium - Proceedings. 743: 591-596.  1
2002 Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Stoner BR, Sitar Z. Wafer bonding of diamond films to silicon for silicon-on-insulator technology Materials Research Society Symposium - Proceedings. 686: 69-74.  1
2001 Collazo R, Schlesser R, Sitar Z. Two field-emission states of single-walled carbon nanotubes Applied Physics Letters. 78: 2058-2060. DOI: 10.1063/1.1361089  1
2001 Wolter SD, Schlesser R, Okuzumi F, Prater JT, Sitar Z. Angle-dependent reflectometry as a technique for fast assessment of highly oriented diamond film quality Diamond and Related Materials. 10: 2092-2095. DOI: 10.1016/S0925-9635(01)00487-3  1
2001 Wolter SD, Schlesser R, Okuzumi F, Prater JT, Sitar Z. Process optimization in the low-pressure flat flame growth of diamond Diamond and Related Materials. 10: 289-294. DOI: 10.1016/S0925-9635(00)00477-5  1
2001 Wolter SD, Prater JT, Sitar Z. Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame Journal of Crystal Growth. 226: 88-94. DOI: 10.1016/S0022-0248(01)01274-X  1
2001 Wolter SD, Okuzumi F, Prater JT, Sitar Z. Frequency and Duty Cycle Dependence on the Pulsed Bias-Enhanced Nucleation of Highly Oriented Diamond on (100) Silicon Physica Status Solidi (a) Applied Research. 186: 331-337. DOI: 10.1002/1521-396X(200108)186:2<331::AID-PSSA331>3.0.CO;2-1  1
2001 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Hot electron transport in AlN Materials Research Society Symposium - Proceedings. 639.  1
2001 Shin H, Thomson DB, Miraglia PQ, Wolter SD, Schlesser R, Sitar Z, Davis RF. Growth and characterization of GAN bulk crystals via vapor phase transport Materials Research Society Symposium - Proceedings. 639.  1
2000 Schiesser R, Collazo R, Bower C, Zhou O, Sitar Z. Energy distribution of field emitted electrons from carbon nanotubes Diamond and Related Materials. 9: 1201-1204. DOI: 10.1016/S0925-9635(99)00277-0  1
2000 Hren JJ, Zhirnov VV, Sitar Z, Wojak G. Characterization of dielectrics on the "tips of needles", Informacije Midem. 30: 210-215.  1
1999 Wolden CA, Draper CE, Sitar Z, Prater JT. The influences of reactant composition and substrate material on the combustion synthesis of diamond Journal of Materials Research. 14: 259-269.  1
1998 McCarson BL, Schlesser R, McClure MT, Sitar Z. Electron emission mechanism from cubic boron nitride-coated molybdenum emitters Applied Physics Letters. 72: 2909-2911. DOI: 10.1063/1.121492  1
1998 Schlesser R, McCarson BL, Sitar Z. Voltage-dependent field emission energy distribution measurements (V-FEED) on wide bandgap cold cathodes Proceedings of the Ieee International Vacuum Microelectronics Conference, Ivmc. 226-227.  1
1998 McCarson BL, Schlesser R, Sitar Z. Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior Journal of Applied Physics. 84: 3382-3385.  1
1998 Schlesser R, McClure MT, McCarson BL, Sitar Z. Mechanisms of field emission from diamond coated Mo emitters Diamond and Related Materials. 7: 636-639.  1
1998 Schlesser R, McCarson BL, McClure MT, Sitar Z. Field emission energy distribution analysis of wide-band-gap field emitters Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 689-692.  1
1998 Wolden CA, Davis RF, Sitar Z, Prater JT. Flat-flame diamond CVD: The effect of pressure and operating conditions for specific applications Diamond and Related Materials. 7: 133-138.  1
1998 Wolden CA, Draper CE, Sitar Z, Prater JT. The influence of nitrogen addition on the morphology, growth rate, and Raman spectra of combustion grown diamond Diamond and Related Materials. 7: 1178-1183.  1
1998 Liu W, Yang PC, Wolden CA, Davis RF, Prater JT, Sitar Z. Transmission electron microscopy analysis of the oriented diamond growth on nickel substrates Journal of Applied Physics. 83: 7658-7663.  1
1998 Sitar Z, Liu W, Yang PC, Wolden CA, Schlesser R, Prater JT. Heteroepitaxial nucleation of diamond on nickel Diamond and Related Materials. 7: 276-282.  1
1998 Choi WB, Schlesser R, Wojak G, Cuomo JJ, Sitar Z, Hren JJ. Electron energy distribution of diamond-coated field emitters Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 716-719.  1
1998 Yang PC, Liu W, Schlesser R, Wolden CA, Davis RF, Prater JT, Sitar Z. Surface melting in the heteroepitaxial nucleation of diamond on Ni Journal of Crystal Growth. 187: 81-88.  1
1998 Yang PC, Wolden CA, Liu W, Schlesser R, Davis RF, Prater JT, Sitar Z. Coalesced oriented diamond films on nickel Journal of Materials Research. 13: 1120-1123.  1
1997 Schlesser R, McCarson BL, McClure MT, Sitar Z. Field emission energy distribution analysis of wide bandgap field emitters Proceedings of the Ieee International Vacuum Microelectronics Conference, Ivmc. 141-145.  1
1997 Wolden CA, Davis RF, Sitar Z, Prater JT. Low-temperature deposition of optically transparent diamond using a low-pressure flat flame Diamond and Related Materials. 6: 1862-1867.  1
1997 Schlesser R, McClure MT, McCarson BL, Sitar Z. Bias voltage dependent field-emission energy distribution analysis of wide band-gap field emitters Journal of Applied Physics. 82: 5763-5772.  1
1997 Wolden CA, Davis RF, Sitar Z, Prater JT. In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame Journal of Materials Research. 12: 2733-2742.  1
1997 McClure MT, Schlesser R, McCarson BL, Sitar Z. Electrical characterization of diamond and graphite coated Mo field emitters Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2067-2071.  1
1997 Pierhöfer H, Sitar Z, Gitmans F, Wüest H, Günter P. New semiconducting substrate for heteroepitaxial growth of K1-yNayTa1-xNbxO3 Ferroelectrics. 201: 269-275.  1
1997 Schlesser R, McClure MT, Choi WB, Hren JJ, Sitar Z. Energy distribution of field emitted electrons from diamond coated molybdenum tips Applied Physics Letters. 70: 1596-1598.  1
1997 Wolden CA, Han SK, McClure MT, Sitar Z, Prater JT. Highly oriented diamond deposited using a low pressure flat flame Materials Letters. 32: 9-12.  1
1997 Dietrich T, Schlesser R, Erler B, Kündig A, Sitar Z, Günter P. Epitaxial growth of nonlinear optical 4′-nitrobenzylidene-3-acetamino-4-methoxy-aniline thin films on ethylenediammonium terephthalate single crystals Journal of Crystal Growth. 172: 473-477.  1
1997 Choi WB, Schlesser R, Wojak G, Cuomo JJ, Sitar Z, Hren JJ. Electron energy distribution of diamond coated field emitters Proceedings of the Ieee International Vacuum Microelectronics Conference, Ivmc. 494-498.  1
1997 Tao Y, Gitmans F, Sitar Z, Pierhöfer H, Kündig A, Gamboni I, Günter P. Dielectric, pyroelectric and structural properties of LiTaO3 thin films grown on silicon by a modified molecular beam epitaxy Ferroelectrics. 201: 245-253.  1
1997 Balkaş CM, Sitar Z, Zheleva T, Bergman L, Nemanich R, Davis RF. Sublimation growth and characterization of bulk aluminum nitride single crystals Journal of Crystal Growth. 179: 363-370.  1
1997 Yang PC, Schlesser R, Wolden CA, Liu W, Davis RF, Sitar Z, Prater JT. Control of diamond heteroepitaxy on nickel by optical reflectance Applied Physics Letters. 70: 2960-2962.  1
1997 Yang PC, Wolden CA, Liu W, Schlesser R, Davis RF, Prater JT, Sitar Z. Achievement of coalesced oriented diamond films on nickel by optical process control and methane enrichment Materials Research Society Symposium - Proceedings. 483: 213-218.  1
1997 Shmagin IK, Muth JF, Lee JH, Kolbas RM, Balkas CM, Sitar Z, Davis RF. Optical metastability in bulk GaN single crystals Applied Physics Letters. 71: 455-457.  1
1996 Sitar Z, Gitmans F, Liu W, Gunter P. Homo and heteroepitaxial growth of LiTaO3 and LiNbO3 by MBE Materials Research Society Symposium - Proceedings. 401: 255-260.  1
1996 Schlesser R, Dietrich T, Sitar Z, Gunter P. Molecular beam deposition of organic nonlinear optical materials Materials Research Society Symposium - Proceedings. 413: 179-184.  1
1996 Dietrich T, Schlesser R, Sitar Z, Gunter P. Growth of organic periodic structures by molecular layer deposition Materials Research Society Symposium - Proceedings. 413: 389-394.  1
1996 Wolden CA, Sitar Z, Davis RF, Prater JT. Textured diamond growth by low pressure flat flame chemical vapor deposition Applied Physics Letters. 69: 2258-2260.  1
1996 Choi WB, McClure MT, Schlesser R, Sitar Z, Hren JJ. Enhanced field emission from diamond coated molybdenum emitters Journal De Physique. Iv : Jp. 6.  1
1996 Davis RF, Tanaka S, Rowland LB, Kern RS, Sitar Z, Ailey SK, Wang C. Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization Journal of Crystal Growth. 164: 132-142.  1
1996 Tucker DA, McClure MT, Fathi Z, Sitar Z, Walden B, Sutton WH, Lewis WA, Wei JB. Microwave plasma assisted CVD of diamond on titanium and Ti-6Al-4V Materials Research Society Symposium - Proceedings. 430: 635-640.  1
1995 Gitmans F, Sitar Z, Günter P. Structure and properties of LiTaO3 thin films grown by modified gas source molecular beam epitaxy Microelectronic Engineering. 29: 289-292. DOI: 10.1016/0167-9317(95)00162-X  1
1995 Pierhöfer H, Sitar Z, Dietrich T, Gitmans F, Günter P. Fabrication and pyroelectric response of a hybrid pyroelectric detector based on epitaxial K0.9Na0.1Ta0.6Nb0.4O3 thin films Microelectronic Engineering. 29: 89-92. DOI: 10.1016/0167-9317(95)00121-2  1
1995 Gitmans F, Sitar Z, Günter P. Growth of tantalum oxide and lithium tantalate thin films by molecular beam epitaxy Vacuum. 46: 939-942. DOI: 10.1016/0042-207X(95)00077-1  1
1995 Sitar Z, Gutmann R, Pierhofer H, Gunter P. Liquid phase epitaxy of Na1-yKyTa1-xNbxO3 for pyroelectric applications Materials Research Society Symposium - Proceedings. 361: 589-594.  1
1994 Davis RF, Paisley MJ, Sitar Z, Kester DJ, Ailey KS, Wang C. Deposition of III-N thin films by molecular beam epitaxy Microelectronics Journal. 25: 661-674. DOI: 10.1016/0026-2692(94)90132-5  1
1994 Sitar Z, Smith LL, Davis RF. Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on α-SiC and sapphire Journal of Crystal Growth. 141: 11-21. DOI: 10.1016/0022-0248(94)90086-8  1
1993 Sumakeris J, Sitar Z, Ailey-Trent KS, More KL, Davis RF. Layer-by-layer epitaxial growth of GaN at low temperatures Thin Solid Films. 225: 244-249. DOI: 10.1016/0040-6090(93)90163-J  1
1992 Sitar Z, Paisley MJ, Ruan J, Choyke JW, Davis RF. Luminescence and lattice parameter of cubic gallium nitride Journal of Materials Science Letters. 11: 261-262. DOI: 10.1007/BF00729406  1
1991 Sitar Z, Paisley MJ, Yan B, Davis RF, Ruan J, Choyke JW. AlN/GaN superlattices grown by gas source molecular beam epitaxy Thin Solid Films. 200: 311-320. DOI: 10.1016/0040-6090(91)90203-A  1
1990 Sitar Z, Paisley MJ, Smith DK, Davis RF. Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment Review of Scientific Instruments. 61: 2407-2411. DOI: 10.1063/1.1141371  1
1989 Paisley MJ, Sitar Z, Posthill JB, Davis RF. Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 701-705. DOI: 10.1116/1.575869  1
1988 Paisley MJ, Sitar Z, Carter CH, Davis RF. Growth Of Gallium Nitride On Silicon Carbide By Molecular Beam Epitaxy Proceedings of Spie - the International Society For Optical Engineering. 877: 8-12. DOI: 10.1117/12.943932  1
Show low-probability matches.