Thomas F. Kuech - Publications

Affiliations: 
Chemical Engineering University of Wisconsin, Madison, Madison, WI 
Area:
Chemical Engineering, Biochemistry, Inorganic Chemistry

202 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Chen Y, Yusuf MH, Guan Y, Jacobson RB, Lagally MG, Babcock SE, Kuech TF, Evans PG. Distinct nucleation and growth kinetics of amorphous SrTiO3 on (001) SrTiO3 and SiO2/Si: A step towards new architectures. Acs Applied Materials & Interfaces. PMID 29094920 DOI: 10.1021/acsami.7b12978  0.72
2016 Laskar MR, Jackson DH, Guan Y, Xu S, Fang S, Dreibelbis M, Mahanthappa MK, Morgan D, Hamers RJ, Kuech TF. Atomic Layer Deposition of Al2O3-Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-ion Battery. Acs Applied Materials & Interfaces. PMID 27035035 DOI: 10.1021/acsami.5b11878  1
2016 Kuech TF, Babcock SE, Mawst L. Growth far from equilibrium: Examples from III-V semiconductors Applied Physics Reviews. 3. DOI: 10.1063/1.4944801  1
2016 Kuech TF. III-V compound semiconductors: Growth and structures Progress in Crystal Growth and Characterization of Materials. DOI: 10.1016/j.pcrysgrow.2016.04.019  1
2015 Jackson DH, O'Neill BJ, Lee J, Huber GW, Dumesic JA, Kuech TF. Tuning Acid-Base Properties Using Mg-Al Oxide Atomic Layer Deposition. Acs Applied Materials & Interfaces. PMID 26168188 DOI: 10.1021/acsami.5b04107  1
2015 Schulte KL, Strand MT, Kuech TF. Evolution of epilayer tilt in thick In<inf>x</inf>Ga<inf>1-x</inf>As metamorphic buffer layers grown by hydride vapor phase epitaxy Journal of Crystal Growth. 426: 283-286. DOI: 10.1016/j.jcrysgro.2015.05.009  1
2014 O'Neill BJ, Sener C, Jackson DH, Kuech TF, Dumesic JA. Control of thickness and chemical properties of atomic layer deposition overcoats for stabilizing Cu/γ-Al2 O3 catalysts. Chemsuschem. 7: 3247-51. PMID 25257472 DOI: 10.1002/cssc.201402832  1
2014 Kim TW, Kuech TF, Mawst LJ. Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application Journal of Crystal Growth. 405: 87-91. DOI: 10.1016/j.jcrysgro.2014.07.056  1
2014 Kuech TF. Preface to Volume III Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. 3: xi-xii. DOI: 10.1016/B978-0-444-63304-0.05002-2  0.36
2014 Kuech TF. Metal Organic Vapor Phase Epitaxy Chemical Kinetics Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. 3: 869-907. DOI: 10.1016/B978-0-444-63304-0.00021-4  0.36
2014 Jackson DHK, Dunn BA, Guan Y, Kuech TF. Tungsten hexacarbonyl and hydrogen peroxide as precursors for the growth of tungsten oxide thin films on titania nanoparticles Aiche Journal. 60: 1278-1286. DOI: 10.1002/aic.14397  1
2014 Yao M, Rawlings JB, Schulte KL, Kuech TF. Modeling and analysis of rapid synthesis of GaAs by hydride vapor phase epitaxy process Materials Engineering and Sciences Division 2014 - Core Programming Area At the 2014 Aiche Annual Meeting. 23-41.  0.32
2013 O'Neill BJ, Jackson DH, Crisci AJ, Farberow CA, Shi F, Alba-Rubio AC, Lu J, Dietrich PJ, Gu X, Marshall CL, Stair PC, Elam JW, Miller JT, Ribeiro FH, Voyles PM, ... ... Kuech TF, et al. Stabilization of copper catalysts for liquid-phase reactions by atomic layer deposition. Angewandte Chemie (International Ed. in English). 52: 13808-12. PMID 24282166 DOI: 10.1002/anie.201308245  1
2013 Huang Y, Kim TW, Xiong S, Mawst LJ, Kuech TF, Nealey PF, Dai Y, Wang Z, Guo W, Forbes D, Hubbard SM, Nesnidal M. InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning. Nano Letters. 13: 5979-84. PMID 24274630 DOI: 10.1021/nl403163x  1
2013 Kuech TF, Mawst LJ, Brown AS. Mixed semiconductor alloys for optical devices. Annual Review of Chemical and Biomolecular Engineering. 4: 187-209. PMID 23540290 DOI: 10.1146/annurev-chembioeng-061312-103359  1
2013 Forghani K, Anand A, Mawst LJ, Kuech TF. Low temperature growth of GaAs1-yBiy epitaxial layers Journal of Crystal Growth. 380: 23-27. DOI: 10.1016/j.jcrysgro.2013.05.033  1
2012 Cho E, Brown A, Kuech TF. Chemical characterization of DNA-immobilized InAs surfaces using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure. Langmuir : the Acs Journal of Surfaces and Colloids. 28: 11890-8. PMID 22809291 DOI: 10.1021/la302313v  1
2012 Mawst LJ, Botez D, Kuech TF. Metamorphic buffer layers for mid-infrared emitting semiconductor lasers Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 99-100. DOI: 10.1109/COMMAD.2012.6472379  1
2012 Jacobsen H, Puchala B, Kuech TF, Morgan D. Ab initio study of the strain dependent thermodynamics of Bi doping in GaAs Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/PhysRevB.86.085207  1
2012 Kuech TF, Jensen KF. OMVPE of Compound Semiconductors Thin Film Processes Ii. 369-442. DOI: 10.1016/B978-0-08-052421-4.50012-5  0.36
2011 Chen W, Kuech TF, Lau SS. Ion-cut transfer of InP-based high electron mobility transistors Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3591110  1
2011 Lo JY, Yu B, Kuech TF, Ramanujam N. A compact, cost-effective diffuse reflectance spectroscopic imaging system for quantitative tissue absorption and scattering Progress in Biomedical Optics and Imaging - Proceedings of Spie. 7890. DOI: 10.1117/12.873617  1
2011 Chen W, Alford TL, Kuech TF, Lau SS. High electron mobility transistors on plastic flexible substrates Applied Physics Letters. 98. DOI: 10.1063/1.3593006  1
2011 Chen C, Kuech TF, Nishinaga T, Zheng L. Journal of Crystal Growth: Editors preface Journal of Crystal Growth. 318: 3. DOI: 10.1016/j.jcrysgro.2011.01.022  1
2011 Kuech TF. Journal of Crystal Growth: Chairpersons preface Journal of Crystal Growth. 318: 1-2. DOI: 10.1016/j.jcrysgro.2011.01.021  1
2011 Kuech TF. Report on the meetings of the international organization for crystal growth executive council and general assembly held during ICCG-16/ICVGE-14 in Beijing, People's Republic of China 813 August, 2010 Journal of Crystal Growth. 318: 1184-1186. DOI: 10.1016/j.jcrysgro.2011.01.020  1
2011 Jha S, Wiedmann MK, Kuech TF. A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxy Journal of Crystal Growth. 315: 87-90. DOI: 10.1016/j.jcrysgro.2010.07.047  1
2010 Fu HL, Yu B, Lo JY, Palmer GM, Kuech TF, Ramanujam N. A low-cost, portable, and quantitative spectral imaging system for application to biological tissues. Optics Express. 18: 12630-45. PMID 20588390 DOI: 10.1364/OE.18.012630  1
2010 Staus CM, Kuech TF, McCaughan L. AlxGa1-xas nested waveguide heterostructures for continuously phase-matched terahertz difference frequency generation Optics Express. 18: 2332-2338. DOI: 10.1364/OE.18.002332  1
2010 Gunawan AA, Jha S, Kuech TF. Growth of size and density controlled GaAs/Inx Ga 1-xAs/GaAs (x=0.10) nanowires on anodic alumina membrane-assisted etching of nanopatterned GaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 1111-1119. DOI: 10.1116/1.3498753  1
2010 Kuech TF, Mawst LJ. Nanofabrication of III-V semiconductors employing diblock copolymer lithography Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/18/183001  1
2010 Kuech TF. Metal organic vapor phase growth of complex semiconductor alloys Aip Conference Proceedings. 1270: 78-92. DOI: 10.1063/1.3476240  1
2009 Lo JY, Yu B, Fu HL, Bender JE, Palmer GM, Kuech TF, Ramanujam N. A strategy for quantitative spectral imaging of tissue absorption and scattering using light emitting diodes and photodiodes. Optics Express. 17: 1372-84. PMID 19188966 DOI: 10.1364/OE.17.001372  1
2009 Uhlrich JJ, Olson DC, Hsu JWP, Kuech TF. Surface chemistry and surface electronic properties of ZnO single crystals and nanorods Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 328-335. DOI: 10.1116/1.3085723  1
2009 Park BN, Uhlrich JJ, Kuech TF, Evans PG. Electrical properties of GaN/poly(3-hexylthiophene) interfaces Journal of Applied Physics. 106. DOI: 10.1063/1.3159653  1
2009 Uhlrich JJ, Franking R, Hamers RJ, Kuech TF. Sulfide treatment of ZnO single crystals and nanorods and the effect on P3HT-ZnO photovoltaic device properties Journal of Physical Chemistry C. 113: 21147-21154. DOI: 10.1021/jp906566v  1
2009 Grabow LC, Uhlrich JJ, Kuech TF, Mavrikakis M. Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces Surface Science. 603: 387-399. DOI: 10.1016/j.susc.2008.11.029  1
2008 Yu B, Lo JY, Kuech TF, Palmer GM, Bender JE, Ramanujam N. Cost-effective diffuse reflectance spectroscopy device for quantifying tissue absorption and scattering in vivo. Journal of Biomedical Optics. 13: 060505. PMID 19123646 DOI: 10.1117/1.3041500  1
2008 McCaughan L, Staus C, Kuech TF. Highly efficient terahertz generation via a continuously phase matched difference frequency generation in a nested waveguide structure 33rd International Conference On Infrared and Millimeter Waves and the 16th International Conference On Terahertz Electronics, 2008, Irmmw-Thz 2008. DOI: 10.1109/ICIMW.2008.4665725  1
2008 Uhlrich JJ, Grabow LC, Mavrikakis M, Kuech TF. Practical surface treatments and surface chemistry of n-type and p-type GaN Journal of Electronic Materials. 37: 439-447. DOI: 10.1007/s11664-007-0348-5  1
2008 Zhang JL, Kuech TF. Fabrication and properties of an asymmetric waveguide containing nanoparticles Journal of Electronic Materials. 37: 135-144. DOI: 10.1007/s11664-007-0324-0  1
2008 Kuech TF, Tischler MA. Epitaxial Growth Handbook of Semiconductor Technology. 2: 111-176. DOI: 10.1002/9783527621828.ch3  0.36
2008 Uhlrich JJ, Kuech TF. A photoelectron spectroscopy study of sulfide-treated ZnO nanorods and single crystals Materials Research Society Symposium Proceedings. 1114: 49-54.  1
2007 Kuech TF. Surfactants in semiconductor epitaxy Aip Conference Proceedings. 916: 288-306. DOI: 10.1063/1.2751920  1
2007 Gokhale AA, Kuech TF, Mavrikakis M. A theoretical comparative study of the surfactant effect of Sb and Bi on GaN growth Journal of Crystal Growth. 303: 493-499. DOI: 10.1016/j.jcrysgro.2007.01.012  1
2007 Liu N, Kuech TF. Interfacial chemistry of InP/GaAs bonded pairs Journal of Electronic Materials. 36: 179-190. DOI: 10.1007/s11664-006-0077-1  1
2007 Grabow LC, Uhlrich JJ, Kuech TF, Mavrikakis M. Towards a functional organic-inorganic semiconductor interface 2007 Aiche Annual Meeting 1
2007 Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Development of lateral epitaxial overgrown InAs microstructure on patterned (100) GaAs substrates Journal of Optoelectronics and Advanced Materials. 9: 1242-1245.  1
2006 Kim H, Colavita PE, Metz KM, Nichols BM, Sun B, Uhlrich J, Wang X, Kuech TF, Hamers RJ. Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers. Langmuir : the Acs Journal of Surfaces and Colloids. 22: 8121-6. PMID 16952251 DOI: 10.1021/la0610708  1
2006 Debs MG, Kuech TF. Phenomenological modeling of diffusion profiles: Sn in GaAs Journal of Applied Physics. 99. DOI: 10.1063/1.2206119  1
2006 Rathi MK, Hawkins BE, Kuech TF. Growth behavior of GaSb by metal-organic vapor-phase epitaxy Journal of Crystal Growth. 296: 117-128. DOI: 10.1016/j.jcrysgro.2006.08.025  1
2006 Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (1 0 0) GaAs Journal of Crystal Growth. 292: 40-52. DOI: 10.1016/j.jcrysgro.2006.04.086  1
2005 Gokhale AA, Kuech TF, Mavrikakis M. Surfactant effect of Sb on GaN growth Journal of Crystal Growth. 285: 146-155. DOI: 10.1016/j.jcrysgro.2005.08.021  1
2005 Kuech TF. Journal of Crystal Growth: Editorial note Journal of Crystal Growth. 280: 1. DOI: 10.1016/j.jcrysgro.2005.03.039  1
2005 Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. InAs growth and development of defect microstructure on GaAs Journal of Crystal Growth. 275. DOI: 10.1016/j.jcrysgro.2004.11.133  1
2005 Uhlrich JJ, Kuech TF. Interface formation and energy level alignment of pentacene on gan Aiche Annual Meeting, Conference Proceedings. 4914.  1
2005 Liu N, Kuech TF. Changes in interfacial bonding energies in the chemical activation of GaAs surfaces Journal of Electronic Materials. 34: 1010-1015.  1
2004 Liu ZY, Saulys DA, Kuech TF. Improved characteristics for Au/n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation Applied Physics Letters. 85: 4391-4393. DOI: 10.1063/1.1815073  1
2004 Kimura A, Paulson CA, Tang HF, Kuech TF. Epitaxial GaN 1-yAs y layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy Applied Physics Letters. 84: 1489-1491. DOI: 10.1063/1.1652232  1
2004 Kimura A, Liu Z, Kuech TF. Antimony as a surfactant during the growth of GaN-based GaNAs alloys by metal organic vapor-phase epitaxy Journal of Crystal Growth. 272: 432-437. DOI: 10.1016/j.jcrysgro.2004.08.061  1
2004 Kimura A, Tang HF, Kuech TF. Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy Journal of Crystal Growth. 265: 71-77. DOI: 10.1016/j.jcrysgro.2004.01.045  1
2003 Liu ZY, Hawkins B, Kuech TF. Chemical and structural characterization of GaSb(100) surfaces treated by HCl-based solutions and annealed in vacuum Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 71-77. DOI: 10.1116/1.1532023  1
2003 Rehder EM, Inoki CK, Kuan TS, Kuech TF. SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study Journal of Applied Physics. 94: 7892-7903. DOI: 10.1063/1.1628406  1
2003 Dwikusuma F, Kuech TF. X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism Journal of Applied Physics. 94: 5656-5664. DOI: 10.1063/1.1618357  1
2003 Liu ZY, Kuech TF, Saulys DA. A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions Applied Physics Letters. 83: 2587-2589. DOI: 10.1063/1.1613994  1
2003 Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates Applied Physics Letters. 83: 1977-1979. DOI: 10.1063/1.1609231  1
2003 Dwikusuma F, Mayer J, Kuech TF. Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy Journal of Crystal Growth. 258: 65-74. DOI: 10.1016/S0022-0248(03)01506-9  1
2003 Dwikusuma F, Kuech TF. The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown using Hydride Vapor Phase Epitaxy Materials Research Society Symposium - Proceedings. 764: 57-62.  1
2003 Kimura A, Tang HF, Paulson CA, Kuech TF. N-rich GaNAs with high as content grown by metalorganic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 798: 329-334.  1
2003 Liu ZY, Kuech TF, Saulys DA. Study of Non-Aqueous Passivation on GaSb (100) Surfaces Materials Research Society Symposium - Proceedings. 763: 67-72.  1
2002 Dwikusuma F, Saulys D, Kuech TF. Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1509072  1
2002 Paulson CA, Ellis AB, Moran PD, Kuech TF. Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy Journal of Applied Physics. 91: 2785-2790. DOI: 10.1063/1.1433184  1
2002 Dwikusuma F, Saulys D, Kuech TF. Study on chemical treatment and high temperature nitridation of sapphire for III-nitride heteroepitaxial growth Materials Research Society Symposium - Proceedings. 743: 67-72.  1
2002 Feng Z, Lovell EG, Engelstad RL, Kuech TF. Effects of surface constraints on stresses in heteroepitaxial films grown on compliant substrates Materials Research Society Symposium - Proceedings. 695: 65-70.  1
2001 Hansen DM, Albaugh CE, Moran PD, Kuech TF. Chemical role of oxygen plasma in wafer bonding using borosilicate glasses Applied Physics Letters. 79: 3413-3415. DOI: 10.1063/1.1418454  1
2001 Hansen DM, Albaugh CE, Moran PD, Kuech TF. Chemical investigations of GaAs wafer bonded interfaces Journal of Applied Physics. 90: 5991-5999. DOI: 10.1063/1.1416139  1
2001 Zhang L, Tang HF, Kuech TF. Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy Applied Physics Letters. 79: 3059-3061. DOI: 10.1063/1.1415774  1
2001 Matthews MJ, Hsu JWP, Gu S, Kuech TF. Carrier density imaging of lateral epitaxially overgrown GaN using scanning confocal Raman microscopy Applied Physics Letters. 79: 3086-3088. DOI: 10.1063/1.1415421  1
2001 Moran PD, Chow D, Hunter A, Kuech TF. Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding Applied Physics Letters. 78: 2232-2234. DOI: 10.1063/1.1359140  1
2001 Kuech TF. Journal of Crystal Growth: Preface Journal of Crystal Growth. 231. DOI: 10.1016/S0022-0248(01)01475-0  1
2001 Moran PD, Kuech TF. Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates Journal of Electronic Materials. 30: 802-806.  1
2001 Rehder EM, Kuan TS, Kuech TF. Mechanism for the reduction of threading dislocation densities in Si0.82Ge0.18 films on silicon on insulator substrates Materials Research Society Symposium - Proceedings. 673.  1
2001 Paulson CA, Ellis AB, Kuech TF. Near-field scanning optical microscopy and electron microprobe microscopy investigations of immiscibility effects in indium gallium phosphide grown by liquid phase epitaxy Materials Research Society Symposium - Proceedings. 667: G271-G276.  1
2001 Hansen DM, Albaugh CE, Moran PD, Kuech TF. Plasma induced chemical changes at silica surfaces during pre-bonding treatments Materials Research Society Symposium Proceedings. 681: 24-29.  1
2000 Seker F, Meeker K, Kuech TF, Ellis AB. Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing. Chemical Reviews. 100: 2505-36. PMID 11749294 DOI: 10.1021/cr980093r  1
2000 Watwe RM, Dumesic JA, Kuech TF. Gas-phase chemistry of metalorganic and nitrogen-bearing compounds Journal of Crystal Growth. 221: 751-757. DOI: 10.1016/S0022-0248(00)00811-3  1
2000 Zhang L, Gu SL, Kuech TF, Boleslawski MP. Gallium nitride growth using diethyl gallium chloride as an alternative gallium source Journal of Crystal Growth. 213: 1-9. DOI: 10.1016/S0022-0248(00)00334-1  1
2000 Sun J, Redwing JM, Kuech TF. Model development of GaN MOVPE growth chemistry for reactor design Journal of Electronic Materials. 29: 2-9.  1
2000 Bieg B, Cederberg JG, Kuech TF. High-temperature hysteretic electronic effects of (AlxGa1-x)0.5In0.5P (x>0.65) Journal of Electronic Materials. 29: 231-236.  1
2000 Gu S, Zhang R, Zhang L, Kuech TF. Lateral and vertical growth study in the initial stages of GaN growth on sapphire with ZnO buffer layers by hydride vapor phase epitaxy Materials Research Society Symposium - Proceedings. 622.  1
2000 Hansen DM, Moran PD, Kuech TF. Low-pressure chemical vapor deposition of borosilicate glasses and their application to wafer bonding Materials Research Society Symposium - Proceedings. 587.  1
1999 Sun J, Redwing JM, Kuech TF. Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride Physica Status Solidi (a) Applied Research. 176: 693-698. DOI: 10.1002/(SICI)1521-396X(199911)176:1<693::AID-PSSA693>3.0.CO;2-Z  1
1999 Li J, Kuech TF. Impurity Incorporation and the Surface Morphology of MOVPE Grown GaAs Journal of Electronic Materials. 28: 124-133.  1
1999 Sun J, Redwing JM, Kuech TF. Comparative study of GaN growth process by MOVPE Materials Research Society Symposium - Proceedings. 572: 463-468.  1
1999 Sun J, Himpsel FJ, Ellis AB, Kuech TF. In situ surface passivation of GaAs by thermal nitridation using metalorganic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 573: 15-20.  1
1999 Reuter EE, Zhang R, Kuech TF, Bishop SG. Photoluminescence excitation spectroscopy of carbon-doped gallium nitride Materials Research Society Symposium - Proceedings. 537.  1
1999 Zhang L, Zhang R, Boleslawski MP, Kuech TF. Gallium nitride growth using diethylgallium chloride as an alternative gallium source Materials Research Society Symposium - Proceedings. 537.  1
1998 Zhang R, Kuech TF. Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy Applied Physics Letters. 72: 1611-1613. DOI: 10.1063/1.121144  1
1998 Sun J, Zhang L, Kuech TF. In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy Journal of Crystal Growth. 195: 711-717.  1
1998 Winder EJ, Kuech TF, Ellis AB. Photoluminescence studies of cadmium selenide crystals in contact with group III trialkyl derivatives Journal of the Electrochemical Society. 145: 2475-2479.  1
1998 Lorenz JK, Kuech TF, Ellis AB. Cadmium selenide photoluminescence as a probe for the surface adsorption of dialkyl chalcogenides Langmuir. 14: 1680-1683.  1
1997 Zhang R, Kuech TF. Carbon and hydrogen induced yellow luminescence in gallium nitride grown by halide vapor phase epitaxy Materials Research Society Symposium - Proceedings. 482: 709-714.  1
1997 Li J, Kuech TF. Evolution of surface structure during carbon doping in the metal-organic vapor-phase epitaxial growth of GaAs Journal of Crystal Growth. 181: 171-180.  1
1997 Li J, Kuech TF. Surface morphology of carbon-doped GaAs grown by MOVPE Journal of Crystal Growth. 170: 292-296.  1
1997 Geisz JF, Safvi SA, Kuech TF. Photoreflectance study of the long-term stability of various surface chemical treatments on (001) n-GaAs Journal of the Electrochemical Society. 144: 732-736.  1
1997 Safvi SA, Liu J, Kuech TF. Spatial resolution of localized photoluminescence by near-field scanning optical microscopy Journal of Applied Physics. 82: 5352-5359.  1
1997 Cederberg JG, Bray KL, Kuech TF. Oxygen-related defects in low phosphorous content GaAs1-yPy grown by metal organic vapor phase epitaxy Journal of Applied Physics. 82: 2263-2269.  1
1997 Kang JU, Frankel MY, Huang JW, Kuech TF. Ultrafast carrier trapping in oxygen-doped metal-organic vapor phase epitaxy GaAs Applied Physics Letters. 70: 1560-1562.  1
1997 Ingerly DB, Chang YA, Perkins NR, Kuech TF. Ohmic contacts to n-GaN using PtIn2 Applied Physics Letters. 70: 108-110.  1
1997 Ingerly DB, Chang YA, Perkins NR, Kuech TF. PtIn2 ohmic contacts to n-GaN Materials Research Society Symposium - Proceedings. 449: 1103-1108.  1
1997 Safvi SA, Redwing JM, Tischler MA, Kuech TF. GaN growth by metallorganic vapor phase epitaxy: A comparison of modeling and experimental measurements Journal of the Electrochemical Society. 144: 1789-1796.  1
1997 Safvi SA, Perkins NR, Horton MN, Kuech TF. Effect of growth parameters and local gas-phase concentrations on the uniformity and material properties of GaN/sapphire grown by hydride vapor-phase epitaxy Materials Research Society Symposium - Proceedings. 449: 289-294.  1
1996 Liu J, Kuech TF. Uniformity of surface passivation after (NH4)2S treatment studied by near-field scanning optical microscopy Materials Research Society Symposium - Proceedings. 406: 523-528.  1
1996 Thon A, Kuech TF. Gas phase adduct reactions in MOCVD growth of GaN Materials Research Society Symposium - Proceedings. 395: 97-102.  1
1996 Kuech TF, Perkins NR. Metalorganic vapor phase epitaxy of II-VI materials for visible light emitters Journal of Crystal Growth. 166: 558-565.  1
1996 Liu J, Kuech TF. A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation Applied Physics Letters. 69: 662-664.  1
1996 Thon A, Kuech TF. High temperature adduct formation of trimethylgallium and ammonia Applied Physics Letters. 69: 55-57.  1
1996 Thon A, Safvi SA, Kuech TF. High temperature gas phases reactions of trimethylgallium with ammonia and trimethylamine Materials Research Society Symposium - Proceedings. 423: 445-450.  1
1996 Ryan JM, Kuech TF, Bray KL. Oxygen-related defects in high purity MOVPE AlGaAs Materials Research Society Symposium - Proceedings. 421: 27-32.  1
1996 Kuech TF, Nayak S, Huang JW, Li J. Chemical and physical effects in oxygen incorporation during the metalorganic vapor phase epitaxial growth of GaAs Journal of Crystal Growth. 163: 171-179.  1
1996 Huang JW, Bray KL, Kuech TF. Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs Journal of Applied Physics. 80: 6819-6826.  1
1996 Safvi SA, Redwing JM, Tischler MA, Kuech TF. Modeling study of GaN growth by MOVPE Materials Research Society Symposium - Proceedings. 395: 255-260.  1
1996 Liu QZ, Lau SS, Perkins NR, Kuech TF. Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions Applied Physics Letters. 69: 1722-1724.  1
1995 Chen CP, Chang YA, Kuech TF. Schottky barrier enhancement using reacted Ni2Al 3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts Journal of Applied Physics. 77: 4777-4782. DOI: 10.1063/1.359397  1
1995 Geisz JF, Kuech TF, Ellis AB. Changing photoluminescence intensity from GaAs/Al0.3Ga 0.7As heterostructures upon chemisorption of SO2 Journal of Applied Physics. 77: 1233-1240. DOI: 10.1063/1.358924  1
1995 Huang JW, Kuech TF, Lu H, Bhat I. Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy Applied Physics Letters. 2392. DOI: 10.1063/1.116144  1
1995 Huang JW, Kuech TF, Anderson TJ. Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide Applied Physics Letters. 67: 1116. DOI: 10.1063/1.114979  1
1995 Frankel MY, Huang JW, Kuech TF. Ultrafast photodetector materials based on oxygen-doped metalorganic vapor phase epitaxy GaAs Applied Physics Letters. 634. DOI: 10.1063/1.114143  1
1995 Huang JW, Ryan JM, Bray KL, Kuech TF. Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy Journal of Electronic Materials. 24: 1539-1546. DOI: 10.1007/BF02676808  1
1995 Huang JW, Kuech TF. Intentional defect incorporation in metalorganic vapor phase epitaxy indium gallium arsenide by oxygen doping Materials Research Society Symposium - Proceedings. 378: 165-170.  1
1994 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n - Type GaAs)/(p-type AlxGa1-xAs) heterointerfaces Physical Review B. 49: 8113-8125. DOI: 10.1103/PhysRevB.49.8113  1
1994 Ryan JM, Huang JW, Kuech TF, Bray KL. The effects of temperature and oxygen concentration on the photoluminescence of epitaxial metalorganic vapor-phase epitaxy GaAs:O Journal of Applied Physics. 76: 1175-1179. DOI: 10.1063/1.357842  1
1994 Huang JW, Kuech TF. Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation Applied Physics Letters. 65: 604-606. DOI: 10.1063/1.112270  1
1994 Chen CP, Chang YA, Huang JW, Kuech TF. High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition Applied Physics Letters. 64: 1413-1415. DOI: 10.1063/1.111900  1
1994 Chen CP, Chang YA, Kuech TF. Schottky enhancement of reacted NiAl/n-GaAs contacts Applied Physics Letters. 64: 3485-3487. DOI: 10.1063/1.111248  1
1994 Huang JW, Kuech TF. Electrical characterization of semi-insulating metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation Journal of Crystal Growth. 145: 462-467. DOI: 10.1016/0022-0248(94)91092-8  1
1994 Redwing JM, Simka H, Jensen KF, Kuech TF. Study of silicon incorporation from SiH4 in GaAs layers grown by metalorganic vapor phase epitaxy using tertiarybutylarsine Journal of Crystal Growth. 145: 397-402. DOI: 10.1016/0022-0248(94)91082-0  1
1994 Kuech TF, Redwing JM. Carbon doping in metalorganic vapor phase epitaxy Journal of Crystal Growth. 145: 382-389. DOI: 10.1016/0022-0248(94)91080-4  1
1994 Redwing JM, Kuech TF, Saulys D, Gaines DF. Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source Journal of Crystal Growth. 135: 423-433. DOI: 10.1016/0022-0248(94)90130-9  1
1994 Huang JW, Kuech TF. Deep level structure of semi-insulating MOVPE GaAs grown by controlled oxygen incorporation Materials Research Society Symposium Proceedings. 325: 305-310.  1
1994 Perkins NR, Dawson-Elli DF, Kuech TF. MOVPE growth and doping of ZnTe using tertiarybutylphosphine as the metalorganic doping precursor Materials Research Society Symposium - Proceedings. 340: 469-474.  1
1994 Geisz JF, Kuech TF, Ellis AB. Changing PL intensity from GaAs/Al0.7As heterostructures due to the chemisorption of SO2: effects of heterostructure geometry Materials Research Society Symposium Proceedings. 318: 225-230.  1
1993 Kuech TF. Selective epitaxy of compound semiconductors: Novel sources Semiconductor Science and Technology. 8: 967-978. DOI: 10.1088/0268-1242/8/6/002  1
1992 Kuech TF. Recent Advances in Metal-Organic Vanor Phase Epitaxy Proceedings of the Ieee. 80: 1609-1624. DOI: 10.1109/5.168669  0.36
1992 Cargill GS, Segmüller A, Kuech TF, Theis TN. Lattice strain from DX centers and persistent photocarriers in Sn-doped and Si-doped Ga1-xAlxAs Physical Review B. 46: 10078-10085. DOI: 10.1103/PhysRevB.46.10078  1
1992 Kuech TF. Perspectives on metal-organic vapor phase epitaxy growth: chemistry, structures and systems Thin Solid Films. 216: 77-83. DOI: 10.1016/0040-6090(92)90873-A  1
1992 Kuech TF, Potemski R, Cardone F. Growth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures Journal of Crystal Growth. 124: 318-325. DOI: 10.1016/0022-0248(92)90478-2  1
1992 Hierlemann MP, Kuech TF. Two-dimensional modeling of the growth of GaAs from (C2H5)2GaCl and AsH3 Journal of Crystal Growth. 124: 56-63. DOI: 10.1016/0022-0248(92)90437-N  1
1992 Kuech TF, Potemski R, Cardone F, Scilla G. Quantitative oxygen measurements in OMVPE Al x Ga1-x As grown by methyl precursors Journal of Electronic Materials. 21: 341-346. DOI: 10.1007/BF02660464  1
1991 Goorsky MS, Kuech TF, Potemski RM. Epitaxial Growth and Selectivity of AlxGa1-xAs Using Novel Metalorganic Precursors Journal of the Electrochemical Society. 138: 1817-1826. DOI: 10.1149/1.2085879  1
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Intrinsic, heterointerface excitonic states in GaAs(n)/Al<inf>0.3</inf>Ga<inf>0.7</inf>As(p) double heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2377-2383. DOI: 10.1116/1.585706  1
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Quantum-confined excitonic states at high-quality interfaces in GaAs(n type)/AlxGa1-xAs(p type) double heterostructures Physical Review B. 43: 14251-14254. DOI: 10.1103/PhysRevB.43.14251  1
1991 Kennedy TA, Glaser ER, Kuech TF. Magnetic resonance of Sn-doped AlxGa1-xAs detected on photoluminescence Semiconductor Science and Technology. 6: B101-B104. DOI: 10.1088/0268-1242/6/10B/020  1
1991 Goorsky MS, Kuech TF, Tischler MA, Potemski RM. Determination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements Applied Physics Letters. 59: 2269-2271. DOI: 10.1063/1.106040  1
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Long-range, minority-carrier transport in high quality "surface- free" GaAs/AlGaAs double heterostructures Applied Physics Letters. 59: 216-218. DOI: 10.1063/1.105970  1
1991 Kuech TF. The use of chloride based precursors in metalorganic vapor phase epitaxy Journal of Crystal Growth. 115: 52-60. DOI: 10.1016/0022-0248(91)90711-D  1
1991 Buchan NI, Kuech TF, Tischler MA, Potemski R. Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall system Journal of Crystal Growth. 107: 331-336. DOI: 10.1016/0022-0248(91)90479-O  1
1991 Annapragada AV, Jensen KF, Kuech TF. Infrared spectroscopic determination of substitutional carbon in MOVPE grown films of GaAs Journal of Crystal Growth. 107: 248-253. DOI: 10.1016/0022-0248(91)90465-H  1
1991 Buchan NI, Kuech TF, Scilla G, Cardone F. Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 - y, TMG and AsH3 Journal of Crystal Growth. 110: 405-414. DOI: 10.1016/0022-0248(91)90276-B  1
1990 Kaufmann U, Wilkening W, Mooney PM, Kuech TF. Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures Physical Review B. 41: 10206-10209. DOI: 10.1103/PhysRevB.41.10206  1
1990 Kuech TF, Collins RT, Smith DL, Mailhiot C. Field-effect transistor structure based on strain-induced polarization charges Journal of Applied Physics. 67: 2650-2652. DOI: 10.1063/1.345474  1
1990 Kuech TF, Segmüller A, Kuan TS, Goorsky MS. Growth and properties of thin GaAs epitaxial layers on Al2O 3 Journal of Applied Physics. 67: 6497-6506. DOI: 10.1063/1.345125  1
1990 Palevski A, Solomon P, Kuech TF, Tischler MA. Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas Applied Physics Letters. 56: 171-173. DOI: 10.1063/1.103019  1
1990 Lebens JA, Tsai CS, Vahala KJ, Kuech TF. Application of selective epitaxy to fabrication of nanometer scale wire and dot structures Applied Physics Letters. 56: 2642-2644. DOI: 10.1063/1.102862  1
1990 Kuech TF, Tischler MA, Buchan NI, Potemski R. Selective epitaxy of MOVPE GaAs using diethyl gallium chloride Journal of Crystal Growth. 99: 324-328. DOI: 10.1016/0022-0248(90)90537-U  1
1990 Jackson TN, Pepper G, DeGelormo JF, Kuech TF. Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor Technical Digest - International Electron Devices Meeting. 507-510.  1
1989 Mooney PM, Wilkening W, Kaufmann U, Kuech TF. Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs Physical Review B. 39: 5554-5557. DOI: 10.1103/PhysRevB.39.5554  1
1989 Tischler MA, Baratte H, Kuech TF, Wang PJ. Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy Journal of Applied Physics. 65: 4928-4935. DOI: 10.1063/1.343209  1
1989 Tischler MA, Kuech TF, Palevski A, Solomon P. Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy Applied Physics Letters. 55: 2214-2216. DOI: 10.1063/1.102064  1
1989 Yu ML, Memmert U, Kuech TF. Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100) Applied Physics Letters. 55: 1011-1013. DOI: 10.1063/1.101719  1
1989 Kuech TF, Tischler MA, Potemski R. Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs Applied Physics Letters. 54: 910-912. DOI: 10.1063/1.100805  1
1989 Venkatasubramanian R, Ghandhi SK, Kuech TF. Compensation mechanisms in n+-GaAs doped with sulphur Journal of Crystal Growth. 97: 827-832. DOI: 10.1016/0022-0248(89)90584-8  1
1989 Masselink WT, Kuech TF. Velocity-field characteristics of electrons in doped GaAs Journal of Electronic Materials. 18: 579-584. DOI: 10.1007/BF02657469  1
1989 Solomon PM, Palevski A, Kuech TF, Tischler MA. Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE Technical Digest - International Electron Devices Meeting. 405-408.  1
1988 Kash JA, Hvam JM, Tsang JC, Kuech TF. Localization and wave-vector conservation for optical phonons in AlxGa1-xAs and thin layers of GaAs Physical Review B. 38: 5776-5779. DOI: 10.1103/PhysRevB.38.5776  1
1988 Scilla GJ, Kuech TF, Cardone F. Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy Applied Physics Letters. 52: 1704-1706. DOI: 10.1063/1.99023  1
1988 Steiner TW, Wolford DJ, Kuech TF, Jaros M. Auger decay of X-point excitons in a type II GaAs/AlGaAs superlattice Superlattices and Microstructures. 4: 227-232. DOI: 10.1016/0749-6036(88)90040-7  1
1988 Tischler MA, Baratte H, Kuech TF, Wang PJ. The influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctions Journal of Crystal Growth. 93: 631-636. DOI: 10.1016/0022-0248(88)90595-7  1
1988 K. Moffat H, Kuech TF, F. Jensen K, Wang PJ. Gas phase and surface reactions in Si doping of GaAs by silanes Journal of Crystal Growth. 93: 594-601. DOI: 10.1016/0022-0248(88)90589-1  1
1988 Kuech TF, Scilla GJ, Cardone F. The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopy Journal of Crystal Growth. 93: 550-556. DOI: 10.1016/0022-0248(88)90582-9  1
1987 Kuech TF. Metal-organic vapor phase epitaxy of compound semiconductors Materials Science Reports. 2: 1-49. DOI: 10.1016/0920-2307(87)90002-8  1
1985 Kuan TS, Kuech TF, Wang WI, Wilkie EL. Long-range order in AlxGa1-xAs. Physical Review Letters. 54: 201-204. PMID 10031439 DOI: 10.1103/PhysRevLett.54.201  1
1985 Veuhoff E, Kuech TF, Meyerson BS. A Study of silicon incorporation in GaAs MOCVD Layers Journal of the Electrochemical Society. 132: 1958-1961. DOI: 10.1149/1.2114261  1
1985 Kuech TF, Potemski R. Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures Applied Physics Letters. 47: 821-823. DOI: 10.1063/1.95995  1
1985 Kuech TF, Potemski R, Chappell TI. Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 58: 1196-1203. DOI: 10.1063/1.336137  1
1985 Hung MY, Kuech TF, Tiwari S. QUASI-PLANARIZATION OF VERTICAL STRUCTURES FOR INTEGRATION WITH PLANAR DEVICES Ibm Technical Disclosure Bulletin. 27: 5062-5063.  1
1985 Kuech TF, Veuhoff E, Wolford DJ, Bradley JA. LOW TEMPERATURE GROWTH OF Al//xGa//1// minus //xAs BY MOCVD Institute of Physics Conference Series. 181-186.  1
1984 Kuech TF, Meyerson BS, Veuhoff E. Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs Applied Physics Letters. 44: 986-988. DOI: 10.1063/1.94621  1
1984 Kuech TF, Veuhoff E. Mechanism of carbon incorporation in MOCVD GaAs Journal of Crystal Growth. 68: 148-156. DOI: 10.1016/0022-0248(84)90410-X  1
1984 Kuech TF, Veuhoff E, Meyerson BS. Silicon doping of GaAs and AlxGa1-xAs using disilane in metalorganic chemical vapor deposition Journal of Crystal Growth. 68: 48-53. DOI: 10.1016/0022-0248(84)90396-8  1
1984 Kuech TF, Lau SS, Wu CS. MEASUREMENT OF SILICIDE SCHOTTKY BARRIER HEIGHTS BY USE OF PHOTOVOLTAIC TECHNIQUES Materials Research Society Symposia Proceedings. 25: 663-668.  1
1983 Wu CS, Lau SS, Kuech TF, Liu BX. Surface morphology and electronic properties of ErSi2 Thin Solid Films. 104: 175-182. DOI: 10.1016/0040-6090(83)90559-X  1
1982 Kuech TF, McCaldin JO. HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure Journal of Applied Physics. 53: 3121-3128. DOI: 10.1063/1.331008  1
1982 Kuech TF, McCaldin JO. Behavior of substrate-confined liquids for in situ crystallization of semiconductors Thin Solid Films. 97: 9-16. DOI: 10.1016/0040-6090(82)90412-6  1
1982 COLLINS RT, KUECH TF, MCGILL TC. DLTS STUDY OF DEEP LEVELS IN N-TYPE CDTE J Vac Sci Technol. 191-194.  1
1981 Kuech TF, McCaldint JO. Low Temperature CVD Growth of Epitaxial HgTe on CdTe Journal of the Electrochemical Society. 128: 1142-1144. DOI: 10.1149/1.2127566  1
1981 Kuech TF, Mäenpää M, Lau SS. Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique Applied Physics Letters. 39: 245-247. DOI: 10.1063/1.92695  1
1981 Kuech TF. The use of Au-Cd alloys to achieve large Schottky barrier heights on CdTe Journal of Applied Physics. 52: 4874-4876. DOI: 10.1063/1.329293  1
1981 McCaldin JO, Kuech TF. Stability and pinning points in substrate-confined liquids Journal of Applied Physics. 52: 803-807. DOI: 10.1063/1.328766  1
1980 Kuech TF, McGaldin JO. COMPOSITIONAL DEPENDENCE OF SCHOTTKY BARRIER HEIGHTS FOR Au ON CHEMICALLY ETCHED In//xGa//1// minus //xP SURFACES Journal of Vacuum Science &Amp; Technology. 17: 891-893. DOI: 10.1116/1.570611  1
1980 Kuech TF, McCaldin JO. Confining substrate for micron-thick liquid films Applied Physics Letters. 37: 44-46. DOI: 10.1063/1.91697  1
1979 Dirstine RT, Blumenthal RN, Kuech TF. Ionic Conductivity of Calcia, Yttria, and Rare Earth-Doped Cerium Dioxide Journal of the Electrochemical Society. 126: 264-269. DOI: 10.1149/1.2129018  1
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