MVS Chandrashekhar - Publications

Affiliations: 
Electrical Engineering University of South Carolina, Columbia, SC 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Optics Physics

71 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Chava VSN, Omar SU, Brown G, Shetu SS, Andrews J, Sudarshan TS, Chandrashekhar MVS. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection Applied Physics Letters. 108. DOI: 10.1063/1.4940385  0.64
2016 Balachandran A, Song H, Sudarshan TS, Chandrashekhar MVS. 4H-SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth Journal of Crystal Growth. 448: 97-104. DOI: 10.1016/j.jcrysgro.2016.05.018  0.64
2016 Rana T, Chandrashekhar MVS, Daniels K, Sudarshan T. SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4) Journal of Electronic Materials. 45: 2019-2024. DOI: 10.1007/s11664-015-4234-2  0.64
2015 Rana T, Chandrashekhar MVS, Daniels K, Sudarshan T. Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient Japanese Journal of Applied Physics. 54. DOI: 10.7567/JJAP.54.030304  0.64
2015 Balachandran A, Song HZ, Sudarshan TS, Shetu SS, Chandrashekhar MVS. Study of SiC epitaxial growth using tetrafluorosilane and dichlorosilane in vertical hotwall CVD furnace Materials Science Forum. 821: 137-140. DOI: 10.4028/www.scientific.net/MSF.821-823.137  0.64
2015 Song HZ, Chandrashekhar MVS, Sudarshan TS. Effect of C/Si ratio and nitrogen doping on 4H-SiC epitaxial growth using dichlorosilane precursor Materials Science Forum. 821: 129-132. DOI: 10.4028/www.scientific.net/MSF.821-823.129  0.64
2015 Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS. Mechanism of electrochemical hydrogenation of epitaxial graphene Journal of the Electrochemical Society. 162: E37-E42. DOI: 10.1149/2.0191504jes  0.64
2015 Song H, Chandrashekhar MVS, Sudarshan TS. Study of surface morphology, impurity incorporation and defect generation during homoepitaxial growth of 4H-SiC using dichlorosilane Ecs Journal of Solid State Science and Technology. 4: P71-P76. DOI: 10.1149/2.0071503jss  0.64
2015 Uddin MA, Singh AK, Daniels KM, Chandrashekhar MVS, Koley G. Impedance spectroscopic analysis of Functionalized Graphene/silicon Schottky Diode sensor 2015 Transducers - 2015 18th International Conference On Solid-State Sensors, Actuators and Microsystems, Transducers 2015. 1381-1384. DOI: 10.1109/TRANSDUCERS.2015.7181190  0.64
2014 Hepp F, Bailey SG, McNatt JS, Chandrashekhar MVS, Harris JD, Rusch AW, Nogales KA, Goettsche KV, Hanson W, Amos D, Vendra VK, Woodbury C, Hari P, Roberts KP, Jones AD. Novel materials, Processing and device technologies for space exploration with potential dual-use applications 12th International Energy Conversion Engineering Conference, Iecec 2014. DOI: 10.2514/6.2014-3464  0.64
2014 Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of quasi-free trilayer graphene on SiC(0001) Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/opl.2014.610  0.64
2014 Omar SU, Sudarshan TS, Rana TA, Song H, Chandrashekhar MVS. Interface Trap-Induced Nonideality in As-Deposited Ni/4H-SiC Schottky Barrier Diode Ieee Transactions On Electron Devices. DOI: 10.1109/TED.2014.2383386  0.64
2014 Brown G, Omar SU, Shetu S, Uddin A, Rana T, Song H, Sudarshan TS, Koley G, Chandrashekhar MVS. High gain bipolar photo-transistor operation in graphene/SiC schottky interfaces: The role of minority carriers 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 444-447. DOI: 10.1109/NANO.2014.6968181  0.64
2014 Uddin MA, Singh AK, Sudarshan TS, Chandrashekhar MVS, Koley G. Tunable graphene/Si chemi-diode H2 sensor: Comparison between Pd and Pt functionalization, and effect of illumination 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 554-557. DOI: 10.1109/NANO.2014.6968132  0.64
2014 Brown GJ, Sabih OU, Shetu SS, Sudarashan TS, Chandrashekhar MVS. Gain of 56 in graphene silicon carbide schottky collector phototransistor (GSCBT) for radiation detection 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 314-317. DOI: 10.1109/NANO.2014.6968128  0.64
2014 Omar SU, Sudarshan TS, Rana TA, Song H, Chandrashekhar MVS. Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: Testing the limits of Tung's model Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/29/295102  0.64
2013 Sudarshan TS, Rana T, Song H, Chandrashekhar MVS. Trade-off between parasitic deposition and SiC homoepitaxial growth rate using halogenated Si-precursors Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.017308jss  0.64
2013 Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS. Electrochemical hydrogenation of dimensional carbon Ecs Transactions. 58: 439-445. DOI: 10.1149/05804.0439ecst  0.64
2013 Song H, Rana T, Chandrashekhar MVS, Omar SU, Sudarshan TS. Comparison of SiC epitaxial growth from dichlorosilane and tetrafluorosilane precursors Ecs Transactions. 58: 97-109. DOI: 10.1149/05804.0097ecst  0.64
2013 Shetu SS, Daas B, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Selective multimodal gas sensing in epitaxial graphene by fourier transform infrared spectroscopy Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688517  0.64
2013 Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Ouisse T, Chaussende D, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/PhysRevB.88.155439  0.64
2013 Shetu SS, Omar SU, Daniels KM, Daas B, Andrews J, Ma S, Sudarshan TS, Chandrashekhar MVS. Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC Journal of Applied Physics. 114. DOI: 10.1063/1.4826899  0.64
2013 Omar SU, Chandrashekhar MVS, Chowdhury IA, Rana TA, Sudarshan TS. Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1° offcut substrate using dichlorosilane as Si precursor Journal of Applied Physics. 113. DOI: 10.1063/1.4803881  0.64
2013 Rana T, Chandrashekhar MVS, Sudarshan TS. Vapor phase surface preparation (etching) of 4H-SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy Journal of Crystal Growth. 380: 61-67. DOI: 10.1016/j.jcrysgro.2013.05.030  0.64
2013 Brown G, Chandrashekhar MVS, Sudarshan TS. High neutron cross-section cladding layers for wide bandgap semiconductors Transactions of the American Nuclear Society. 109: 539-542.  0.64
2012 Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Molecular gas adsorption induced carrier transport studies of epitaxial graphene using IR reflection spectroscopy Materials Science Forum. 717: 665-668. DOI: 10.4028/www.scientific.net/MSF.717-720.665  0.64
2012 Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidence of electrochemical graphene functionalization by Raman spectroscopy Materials Science Forum. 717: 661-664. DOI: 10.4028/www.scientific.net/MSF.717-720.661  0.64
2012 Daas BK, Daniels K, Shetu S, Sudarshan TS, Chandrashekhar MVS. Study of epitaxial graphene on non-polar 6H-SiC faces Materials Science Forum. 717: 633-636. DOI: 10.4028/www.scientific.net/MSF.717-720.633  0.64
2012 Omar SU, Song H, Sudarshan TS, Chandrashekhar MVS. Room temperature photoluminescence from 4H-SiC epilayers: Non-destructive estimation of in-grown stacking fault density Materials Science Forum. 717: 399-402. DOI: 10.4028/www.scientific.net/MSF.717-720.399  0.64
2012 Rana T, Song H, Chandrashekhar MVS, Sudarshan T. Behavior of particles in the growth reactor and their effect on silicon carbide epitaxial growth Materials Science Forum. 717: 153-156. DOI: 10.4028/www.scientific.net/MSF.717-720.153  0.64
2012 Song H, Omar SU, Rana T, Chandrashekhar MVS, Sudarshan TS. In-grown stacking faults in SiC-CVD using dichlorosilane and propane as precursors Materials Science Forum. 717: 121-124. DOI: 10.4028/www.scientific.net/MSF.717-720.121  0.64
2012 Rana T, Song H, Chandrashekhar MVS, Sudarshan T. Comparison of 4H silicon carbide epitaxial growths at various growth pressures using dicholorosilane and silane gases Materials Science Forum. 717: 117-120. DOI: 10.4028/www.scientific.net/MSF.717-720.117  0.64
2012 Chandrashekhar MVS, Chowdhury I, Kaminski P, Kozlowski R, Klein PB, Sudarshan T. High purity semi-insulating 4H-SiC epitaxial layers by defect-competition epitaxy: Controlling Si vacancies Applied Physics Express. 5. DOI: 10.1143/APEX.5.025502  0.64
2012 Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies Journal of Applied Physics. 111. DOI: 10.1063/1.4725489  0.64
2012 Daas BK, Omar SU, Shetu S, Daniels KM, Ma S, Sudarshan TS, Chandrashekhar MVS. Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: On the growth of multilayer films Crystal Growth and Design. 12: 3379-3387. DOI: 10.1021/cg300456v  0.64
2012 Rana T, Chandrashekhar MVS, Sudarshan TS. Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4) precursor for high quality thick silicon carbide (SiC) homoepitaxy Physica Status Solidi (a) Applications and Materials Science. 209: 2455-2462. DOI: 10.1002/pssa.201228319  0.64
2011 Daas BK, Islam MM, Chowdhury IA, Zhao F, Sudarshan TS, Chandrashekhar MVS. Doping dependence of thermal oxidation on n-type 4H-SiC Ieee Transactions On Electron Devices. 58: 115-121. DOI: 10.1109/TED.2010.2088270  0.64
2011 Daas BK, Daniels KM, Sudarshan TS, Chandrashekhar MVS. Polariton enhanced infrared reflection of epitaxial graphene Journal of Applied Physics. 110. DOI: 10.1063/1.3666069  0.64
2011 Thomas T, Guo X, Shi J, Lepak LA, Chandrashekhar MVS, Li K, Disalvo FJ, Spencer MG. Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition Journal of Crystal Growth. 316: 90-96. DOI: 10.1016/j.jcrysgro.2010.12.059  0.64
2011 Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Méndez Torres A, Chandrashekhar MVS. Advance in molecular gas sensing studies using epitaxial graphene Transactions of the American Nuclear Society. 105: 260-261.  0.64
2010 Qazi M, Nomani MWK, Chandrashekhar MVS, Shields VB, Spencer MG, Koley G. Molecular adsorption behavior of epitaxial graphene grown on 6H-SiC faces Applied Physics Express. 3. DOI: 10.1143/APEX.3.075101  0.64
2010 Wang H, Strait JH, George PA, Shivaraman S, Shields VB, Chandrashekhar M, Hwang J, Rana F, Spencer MG, Ruiz-Vargas CS, Park J. Ultrafast relaxation dynamics of hot optical phonons in graphene Applied Physics Letters. 96. DOI: 10.1063/1.3291615  0.64
2010 Zhao F, Islam MM, Chandrashekhar MVS, Mandal KC, Sudarshan TS. Investigation of SiO2 cap for Al implant activation in 4H-SiC Materials Research Society Symposium Proceedings. 1246: 99-103.  0.64
2009 Qazi M, Nomani MW, Chandrashekhar MVS, Koley G. NO2 sensitivity of wide area SiC and epitaxial graphene on SiC substrates 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378345  0.64
2009 Rana F, George PA, Strait JH, Dawlaty J, Shivaraman S, Chandrashekhar M, Spencer MG. Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/PhysRevB.79.115447  0.64
2009 Qazi M, Liu J, Chandrashekhar MVS, Koley G. Surface electronic property of SiC correlated with NO2 adsorption Journal of Applied Physics. 106. DOI: 10.1063/1.3251404  0.64
2009 Strait JH, George PA, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Emission of terahertz radiation from SiC Applied Physics Letters. 95. DOI: 10.1063/1.3194152  0.64
2009 Lu J, Thomas CI, Chandrashekhar MVS, Spencer MG. Measurement of spontaneous polarization charge in C-face 3C-SiC/6H-SiC heterostructure with two-dimensional electron gas by capacitance-voltage method Journal of Applied Physics. 105. DOI: 10.1063/1.3130398  0.64
2009 Lu J, Chandrashekhar MVS, Parks JJ, Ralph DC, Spencer MG. Quantum confinement and coherence in a two-dimensional electron gas in a carbon-face 3C-SiC/6H-SiC polytype heterostructure Applied Physics Letters. 94. DOI: 10.1063/1.3126447  0.64
2009 Thomas T, Guo X, Chandrashekhar MVS, Poitras CB, Shaff W, Dreibelbis M, Reiherzer J, Li K, DiSalvo FJ, Lipson M, Spencer MG. Purification and mechanical nanosizing of Eu-doped GaN Journal of Crystal Growth. 311: 4402-4407. DOI: 10.1016/j.jcrysgro.2009.07.028  0.64
2009 Shivaraman S, Chandrashekhar MVS, Boeckl JJ, Spencer MG. Thickness estimation of epitaxial graphene on sic using attenuation of substrate raman intensity Journal of Electronic Materials. 38: 725-730. DOI: 10.1007/s11664-009-0803-6  0.64
2009 Thomas T, Chandrashekhar MVS, Poitras CB, Shi J, Reiherzer JC, DiSalvo FJ, Lipson M, Spencer MG. Photoluminescence enhancement in Eu doped GaN powder by oxidative passivation of the surface Materials Research Society Symposium Proceedings. 1111: 91-96.  0.64
2008 George PA, Strait J, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene. Nano Letters. 8: 4248-51. PMID 19367881 DOI: 10.1021/nl8019399  0.64
2008 Dawlaty JM, George P, Strait J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Measurement of the optical properties of graphene from THz to near-IR 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551347  0.64
2008 Dawlaty JM, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Probing ultrafast dynamics of electrons and holes in graphene 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551069  0.64
2008 Dawlaty JM, Shivaraman S, Strait J, George P, Chandrashekhar M, Rana F, Spencer MG, Veksler D, Chen Y. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible Applied Physics Letters. 93. DOI: 10.1063/1.2990753  0.64
2008 Dawlaty JM, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Measurement of ultrafast carrier dynamics in epitaxial graphene Applied Physics Letters. 92. DOI: 10.1063/1.2837539  0.64
2008 Shi J, Chandrashekhar MVS, Reiherzer J, Schaff WJ, Lu J, Disalvo FJ, Spencer MG. Effect of growth temperature on Eu incorporation in GaN powders Journal of Crystal Growth. 310: 452-456. DOI: 10.1016/j.jcrysgro.2007.10.020  0.64
2008 Cai Z, Garzon S, Chandrashekhar MVS, Webb RA, Koley G. Synthesis and properties of high-quality InN nanowires and nanonetworks Journal of Electronic Materials. 37: 585-592. DOI: 10.1007/s11664-007-0353-8  0.64
2008 Koley G, Chandrashekhar MVS, Thomas CI, Spencer MG. Polarization in wide bandgap semiconductors and their characterization by scanning probe microscopy Polarization Effects in Semiconductors: From Ab Initiotheory to Device Applications. 265-305. DOI: 10.1007/978-0-387-68319-5_6  0.64
2008 Shi J, Chandrashekhar MVS, Reiherzer J, Schaff W, Lu J, Disalvo F, Spencer M. High intensity red emission from Eu doped GaN powders Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1495-1498. DOI: 10.1002/pssc.200778413  0.64
2007 Chandrashekhar MVS, Duggirala R, Lal A, Spencer MG. 4H SiC beta-powered temperature transducer Proceedings of Ieee Sensors. 942-945. DOI: 10.1109/ICSENS.2007.4388558  0.64
2007 Chandrashekhar MVS, Lu J, Spencer MG, Qazi M, Koley G. Large area nanocrystalline graphite films on SiC for gas sensing applications Proceedings of Ieee Sensors. 558-561. DOI: 10.1109/ICSENS.2007.4388459  0.64
2007 Chandrashekhar MVS, Duggirala R, Spencer MG, Lal A. 4H SiC betavoltaic powered temperature transducer Applied Physics Letters. 91. DOI: 10.1063/1.2767780  0.64
2007 Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Observation of a two dimensional electron gas formed in a polarization doped C -face 3C4H SiC heteropolytype junction Applied Physics Letters. 91. DOI: 10.1063/1.2754650  0.64
2007 Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face Applied Physics Letters. 90. DOI: 10.1063/1.2730738  0.64
2006 Cha HY, Wu H, Chandrashekhar M, Choi YC, Chae S, Koley G, Spencer MG. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors Nanotechnology. 17: 1264-1271. DOI: 10.1088/0957-4484/17/5/018  0.64
2006 Chandrashekhar MVS, Thomas CI, Spencer MG. Measurement of the mean electron-hole pair ionization energy in 4H SiC Applied Physics Letters. 89. DOI: 10.1063/1.2243799  0.64
2006 Chandrashekhar MVS, Thomas CI, Li H, Spencer MG, Lal A. Demonstration of a 4H SiC betavoltaic cell Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2166699  0.64
2006 Wu H, Cha HY, Chandrashekhar M, Spencer MG, Koley G. High-yield GaN nanowire synthesis and field-effect transistor fabrication Journal of Electronic Materials. 35: 670-674. DOI: 10.1007/s11664-006-0118-9  0.64
2005 Choi YC, Cha HY, Chandrashekhar M, Eastman LF, Spencer MG. A new approach to maximizing the power handling capability in recessed gate silicon carbide static induction transistors Pesc Record - Ieee Annual Power Electronics Specialists Conference. 2005: 2171-2174. DOI: 10.1109/PESC.2005.1581933  0.64
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