| Year |
Citation |
Score |
| 2020 |
Straker M, Chauhan A, Sinha M, Phelan WA, Chandrashekhar M, Hemker KJ, Marvel C, Spencer M. Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method Journal of Crystal Growth. 543: 125700. DOI: 10.1016/J.Jcrysgro.2020.125700 |
0.456 |
|
| 2019 |
Jewel MU, Alam MD, Mollah S, Hussain K, Wheeler V, Eddy C, Gaevski M, Simin G, Chandrashekhar M, Khan A. Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence Applied Physics Letters. 115: 213502. DOI: 10.1063/1.5125776 |
0.324 |
|
| 2017 |
Muhtadi S, Hwang SM, Coleman A, Asif F, Simin G, Chandrashekhar M, Khan A. High Electron Mobility Transistors With Al 0.65 Ga 0.35 N Channel Layers on Thick AlN/Sapphire Templates Ieee Electron Device Letters. 38: 914-917. DOI: 10.1109/Led.2017.2701651 |
0.363 |
|
| 2017 |
Barker BG, Chava VSN, Daniels KM, Chandrashekhar MVS, Greytak AB. Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy 2d Materials. 5: 011003. DOI: 10.1088/2053-1583/aa90b1 |
0.68 |
|
| 2017 |
Jahangir I, Koley G, Chandrashekhar MVS. Back gated FETs fabricated by large-area, transfer-free growth of a few layer MoS2 with high electron mobility Applied Physics Letters. 110: 182108. DOI: 10.1063/1.4982595 |
0.599 |
|
| 2016 |
Uddin MA, Singh A, Daniels K, Vogt T, Chandrashekhar MVS, Koley G. Impedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensors Japanese Journal of Applied Physics. 55: 110312. DOI: 10.7567/Jjap.55.110312 |
0.745 |
|
| 2016 |
Daniels KM, Obe A, Daas BK, Weidner J, Williams C, Sudarshan TS, Chandrashekhar M. Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene Journal of the Electrochemical Society. 163: E130-E134. DOI: 10.1149/2.0791605Jes |
0.812 |
|
| 2016 |
Chava VSN, Omar SU, Brown G, Shetu SS, Andrews J, Sudarshan TS, Chandrashekhar MVS. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection Applied Physics Letters. 108. DOI: 10.1063/1.4940385 |
0.817 |
|
| 2016 |
Rana T, Chandrashekhar MVS, Daniels K, Sudarshan T. SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4) Journal of Electronic Materials. 45: 2019-2024. DOI: 10.1007/S11664-015-4234-2 |
0.69 |
|
| 2015 |
Rana T, Chandrashekhar MVS, Daniels K, Sudarshan T. Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.030304 |
0.683 |
|
| 2015 |
Balachandran A, Song HZ, Sudarshan TS, Shetu SS, Chandrashekhar MVS. Study of SiC epitaxial growth using tetrafluorosilane and dichlorosilane in vertical hotwall CVD furnace Materials Science Forum. 821: 137-140. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.137 |
0.781 |
|
| 2015 |
Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS. Mechanism of electrochemical hydrogenation of epitaxial graphene Journal of the Electrochemical Society. 162: E37-E42. DOI: 10.1149/2.0191504Jes |
0.814 |
|
| 2015 |
Uddin MA, Singh AK, Daniels KM, Chandrashekhar MVS, Koley G. Impedance spectroscopic analysis of Functionalized Graphene/silicon Schottky Diode sensor 2015 Transducers - 2015 18th International Conference On Solid-State Sensors, Actuators and Microsystems, Transducers 2015. 1381-1384. DOI: 10.1109/TRANSDUCERS.2015.7181190 |
0.727 |
|
| 2014 |
Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of quasi-free trilayer graphene on SiC(0001) Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.610 |
0.824 |
|
| 2014 |
Brown G, Omar SU, Shetu S, Uddin A, Rana T, Song H, Sudarshan TS, Koley G, Chandrashekhar MVS. High gain bipolar photo-transistor operation in graphene/SiC schottky interfaces: The role of minority carriers 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 444-447. DOI: 10.1109/NANO.2014.6968181 |
0.701 |
|
| 2014 |
Uddin MA, Singh AK, Sudarshan TS, Chandrashekhar MVS, Koley G. Tunable graphene/Si chemi-diode H2 sensor: Comparison between Pd and Pt functionalization, and effect of illumination 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 554-557. DOI: 10.1109/NANO.2014.6968132 |
0.626 |
|
| 2014 |
Brown GJ, Sabih OU, Shetu SS, Sudarashan TS, Chandrashekhar MVS. Gain of 56 in graphene silicon carbide schottky collector phototransistor (GSCBT) for radiation detection 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 314-317. DOI: 10.1109/NANO.2014.6968128 |
0.825 |
|
| 2013 |
Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS. Electrochemical hydrogenation of dimensional carbon Ecs Transactions. 58: 439-445. DOI: 10.1149/05804.0439ecst |
0.53 |
|
| 2013 |
Shetu SS, Daas B, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Selective multimodal gas sensing in epitaxial graphene by fourier transform infrared spectroscopy Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688517 |
0.802 |
|
| 2013 |
Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Ouisse T, Chaussende D, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.155439 |
0.821 |
|
| 2013 |
Shetu SS, Omar SU, Daniels KM, Daas B, Andrews J, Ma S, Sudarshan TS, Chandrashekhar MVS. Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC Journal of Applied Physics. 114. DOI: 10.1063/1.4826899 |
0.79 |
|
| 2012 |
Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Molecular gas adsorption induced carrier transport studies of epitaxial graphene using IR reflection spectroscopy Materials Science Forum. 717: 665-668. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.665 |
0.815 |
|
| 2012 |
Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidence of electrochemical graphene functionalization by Raman spectroscopy Materials Science Forum. 717: 661-664. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.661 |
0.828 |
|
| 2012 |
Daas BK, Daniels K, Shetu S, Sudarshan TS, Chandrashekhar MVS. Study of epitaxial graphene on non-polar 6H-SiC faces Materials Science Forum. 717: 633-636. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.633 |
0.773 |
|
| 2012 |
Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies Journal of Applied Physics. 111. DOI: 10.1063/1.4725489 |
0.827 |
|
| 2012 |
Daas BK, Omar SU, Shetu S, Daniels KM, Ma S, Sudarshan TS, Chandrashekhar MVS. Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: On the growth of multilayer films Crystal Growth and Design. 12: 3379-3387. DOI: 10.1021/Cg300456V |
0.796 |
|
| 2011 |
Daas BK, Islam MM, Chowdhury IA, Zhao F, Sudarshan TS, Chandrashekhar MVS. Doping dependence of thermal oxidation on n-type 4H-SiC Ieee Transactions On Electron Devices. 58: 115-121. DOI: 10.1109/Ted.2010.2088270 |
0.77 |
|
| 2011 |
Daas BK, Daniels KM, Sudarshan TS, Chandrashekhar MVS. Polariton enhanced infrared reflection of epitaxial graphene Journal of Applied Physics. 110. DOI: 10.1063/1.3666069 |
0.834 |
|
| 2011 |
Thomas T, Guo X, Shi J, Lepak LA, Chandrashekhar MVS, Li K, Disalvo FJ, Spencer MG. Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition Journal of Crystal Growth. 316: 90-96. DOI: 10.1016/J.Jcrysgro.2010.12.059 |
0.676 |
|
| 2011 |
Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Méndez Torres A, Chandrashekhar MVS. Advance in molecular gas sensing studies using epitaxial graphene Transactions of the American Nuclear Society. 105: 260-261. |
0.813 |
|
| 2010 |
Qazi M, Nomani MWK, Chandrashekhar MVS, Shields VB, Spencer MG, Koley G. Molecular adsorption behavior of epitaxial graphene grown on 6H-SiC faces Applied Physics Express. 3. DOI: 10.1143/Apex.3.075101 |
0.769 |
|
| 2010 |
Wang H, Strait JH, George PA, Shivaraman S, Shields VB, Chandrashekhar M, Hwang J, Rana F, Spencer MG, Ruiz-Vargas CS, Park J. Ultrafast relaxation dynamics of hot optical phonons in graphene Applied Physics Letters. 96. DOI: 10.1063/1.3291615 |
0.822 |
|
| 2009 |
Shivaraman S, Barton RA, Yu X, Alden J, Herman L, Chandrashekhar M, Park J, McEuen PL, Parpia JM, Craighead HG, Spencer MG. Free-standing epitaxial graphene. Nano Letters. 9: 3100-5. PMID 19663456 DOI: 10.1021/Nl900479G |
0.83 |
|
| 2009 |
Qazi M, Nomani MW, Chandrashekhar MVS, Koley G. NO2 sensitivity of wide area SiC and epitaxial graphene on SiC substrates 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378345 |
0.68 |
|
| 2009 |
Rana F, George PA, Strait JH, Dawlaty J, Shivaraman S, Chandrashekhar M, Spencer MG. Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.115447 |
0.808 |
|
| 2009 |
Qazi M, Liu J, Chandrashekhar MVS, Koley G. Surface electronic property of SiC correlated with NO2 adsorption Journal of Applied Physics. 106. DOI: 10.1063/1.3251404 |
0.581 |
|
| 2009 |
Strait JH, George PA, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Emission of terahertz radiation from SiC Applied Physics Letters. 95. DOI: 10.1063/1.3194152 |
0.761 |
|
| 2009 |
Lu J, Thomas CI, Chandrashekhar MVS, Spencer MG. Measurement of spontaneous polarization charge in C-face 3C-SiC/6H-SiC heterostructure with two-dimensional electron gas by capacitance-voltage method Journal of Applied Physics. 105. DOI: 10.1063/1.3130398 |
0.658 |
|
| 2009 |
Lu J, Chandrashekhar MVS, Parks JJ, Ralph DC, Spencer MG. Quantum confinement and coherence in a two-dimensional electron gas in a carbon-face 3C-SiC/6H-SiC polytype heterostructure Applied Physics Letters. 94. DOI: 10.1063/1.3126447 |
0.493 |
|
| 2009 |
Thomas T, Guo X, Chandrashekhar MVS, Poitras CB, Shaff W, Dreibelbis M, Reiherzer J, Li K, DiSalvo FJ, Lipson M, Spencer MG. Purification and mechanical nanosizing of Eu-doped GaN Journal of Crystal Growth. 311: 4402-4407. DOI: 10.1016/J.Jcrysgro.2009.07.028 |
0.651 |
|
| 2009 |
Shivaraman S, Chandrashekhar MVS, Boeckl JJ, Spencer MG. Thickness estimation of epitaxial graphene on sic using attenuation of substrate raman intensity Journal of Electronic Materials. 38: 725-730. DOI: 10.1007/S11664-009-0803-6 |
0.835 |
|
| 2009 |
Thomas T, Chandrashekhar MVS, Poitras CB, Shi J, Reiherzer JC, DiSalvo FJ, Lipson M, Spencer MG. Photoluminescence enhancement in Eu doped GaN powder by oxidative passivation of the surface Materials Research Society Symposium Proceedings. 1111: 91-96. |
0.639 |
|
| 2008 |
George PA, Strait J, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene. Nano Letters. 8: 4248-51. PMID 19367881 DOI: 10.1021/Nl8019399 |
0.83 |
|
| 2008 |
Dawlaty JM, George P, Strait J, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Measurement of the optical properties of graphene from THz to near-IR 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551347 |
0.795 |
|
| 2008 |
Dawlaty JM, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Probing ultrafast dynamics of electrons and holes in graphene 2008 Conference On Quantum Electronics and Laser Science Conference On Lasers and Electro-Optics, Cleo/Qels. DOI: 10.1109/CLEO.2008.4551069 |
0.792 |
|
| 2008 |
Dawlaty JM, Shivaraman S, Strait J, George P, Chandrashekhar M, Rana F, Spencer MG, Veksler D, Chen Y. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible Applied Physics Letters. 93. DOI: 10.1063/1.2990753 |
0.814 |
|
| 2008 |
Dawlaty JM, Shivaraman S, Chandrashekhar M, Rana F, Spencer MG. Measurement of ultrafast carrier dynamics in epitaxial graphene Applied Physics Letters. 92. DOI: 10.1063/1.2837539 |
0.837 |
|
| 2008 |
Shi J, Chandrashekhar MVS, Reiherzer J, Schaff WJ, Lu J, Disalvo FJ, Spencer MG. Effect of growth temperature on Eu incorporation in GaN powders Journal of Crystal Growth. 310: 452-456. DOI: 10.1016/J.Jcrysgro.2007.10.020 |
0.467 |
|
| 2008 |
Cai Z, Garzon S, Chandrashekhar MVS, Webb RA, Koley G. Synthesis and properties of high-quality InN nanowires and nanonetworks Journal of Electronic Materials. 37: 585-592. DOI: 10.1007/S11664-007-0353-8 |
0.577 |
|
| 2008 |
Koley G, Chandrashekhar MVS, Thomas CI, Spencer MG. Polarization in wide bandgap semiconductors and their characterization by scanning probe microscopy Polarization Effects in Semiconductors: From Ab Initiotheory to Device Applications. 265-305. DOI: 10.1007/978-0-387-68319-5_6 |
0.678 |
|
| 2008 |
Shi J, Chandrashekhar MVS, Reiherzer J, Schaff W, Lu J, Disalvo F, Spencer M. High intensity red emission from Eu doped GaN powders Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1495-1498. DOI: 10.1002/Pssc.200778413 |
0.491 |
|
| 2007 |
Chandrashekhar MVS, Lu J, Spencer MG, Qazi M, Koley G. Large area nanocrystalline graphite films on SiC for gas sensing applications Proceedings of Ieee Sensors. 558-561. DOI: 10.1109/ICSENS.2007.4388459 |
0.552 |
|
| 2007 |
Chandrashekhar MVS, Duggirala R, Spencer MG, Lal A. 4H SiC betavoltaic powered temperature transducer Applied Physics Letters. 91. DOI: 10.1063/1.2767780 |
0.447 |
|
| 2007 |
Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Observation of a two dimensional electron gas formed in a polarization doped C -face 3C4H SiC heteropolytype junction Applied Physics Letters. 91. DOI: 10.1063/1.2754650 |
0.671 |
|
| 2007 |
Chandrashekhar MVS, Thomas CI, Lu J, Spencer MG. Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face Applied Physics Letters. 90. DOI: 10.1063/1.2730738 |
0.677 |
|
| 2006 |
Chandrashekhar MVS, Thomas CI, Li H, Spencer MG, Lal A. Demonstration of a 4H SiC betavoltaic cell Applied Physics Letters. 88: 1-3. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1351 |
0.63 |
|
| 2006 |
Cha HY, Wu H, Chandrashekhar M, Choi YC, Chae S, Koley G, Spencer MG. Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors Nanotechnology. 17: 1264-1271. DOI: 10.1088/0957-4484/17/5/018 |
0.779 |
|
| 2006 |
Chandrashekhar MVS, Thomas CI, Spencer MG. Measurement of the mean electron-hole pair ionization energy in 4H SiC Applied Physics Letters. 89. DOI: 10.1063/1.2243799 |
0.637 |
|
| 2006 |
Wu H, Cha HY, Chandrashekhar M, Spencer MG, Koley G. High-yield GaN nanowire synthesis and field-effect transistor fabrication Journal of Electronic Materials. 35: 670-674. DOI: 10.1007/S11664-006-0118-9 |
0.751 |
|
| 2005 |
Choi YC, Cha HY, Chandrashekhar M, Eastman LF, Spencer MG. A new approach to maximizing the power handling capability in recessed gate silicon carbide static induction transistors Pesc Record - Ieee Annual Power Electronics Specialists Conference. 2005: 2171-2174. DOI: 10.1109/PESC.2005.1581933 |
0.359 |
|
| Low-probability matches (unlikely to be authored by this person) |
| 2016 |
Balachandran A, Song H, Sudarshan TS, Chandrashekhar MVS. 4H-SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth Journal of Crystal Growth. 448: 97-104. DOI: 10.1016/J.Jcrysgro.2016.05.018 |
0.297 |
|
| 2017 |
Dolgopolova EA, Brandt AJ, Ejegbavwo O, Duke AS, Maddumapatabandi TD, Galhenage RP, Larson BW, Reid O, Ammal SC, Heyden A, Chandrashekhar M, Stavila V, Chen DA, Shustova NB. Electronic Properties of Bimetallic Metal-Organic Frameworks (MOFs): Tailoring Density of Electronic States Through MOF Modularity. Journal of the American Chemical Society. PMID 28316244 DOI: 10.1021/Jacs.7B01125 |
0.292 |
|
| 2017 |
Balachandran A, Sudarshan TS, Chandrashekhar MVS. Basal Plane Dislocation Free Recombination Layers on Low-Doped Buffer Layer for Power Devices Crystal Growth & Design. 17: 1550-1557. DOI: 10.1021/Acs.Cgd.6B01460 |
0.287 |
|
| 2019 |
Mollah S, Gaevski M, Chandrashekhar M, Hu X, Wheeler V, Hussain K, Mamun A, Floyd R, Ahmad I, Simin G, Eddy C, Khan A. Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric Semiconductor Science and Technology. 34: 125001. DOI: 10.1088/1361-6641/Ab4781 |
0.282 |
|
| 2015 |
Song H, Chandrashekhar MVS, Sudarshan TS. Study of surface morphology, impurity incorporation and defect generation during homoepitaxial growth of 4H-SiC using dichlorosilane Ecs Journal of Solid State Science and Technology. 4: P71-P76. DOI: 10.1149/2.0071503Jss |
0.281 |
|
| 2020 |
Mollah S, Hussain K, Floyd R, Mamun A, Gaevski M, Chandrashekhar M, Ahmad I, Simin G, Wheeler V, Eddy C, Khan A. High‐Temperature Operation of Al
x
Ga
1−
x
N (
x
> 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐
k
Atomic Layer Deposited Gate Oxides Physica Status Solidi (a). 217: 1900802. DOI: 10.1002/Pssa.201900802 |
0.281 |
|
| 2013 |
Omar SU, Chandrashekhar MVS, Chowdhury IA, Rana TA, Sudarshan TS. Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1° offcut substrate using dichlorosilane as Si precursor Journal of Applied Physics. 113. DOI: 10.1063/1.4803881 |
0.279 |
|
| 2015 |
Song HZ, Chandrashekhar MVS, Sudarshan TS. Effect of C/Si ratio and nitrogen doping on 4H-SiC epitaxial growth using dichlorosilane precursor Materials Science Forum. 821: 129-132. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.129 |
0.277 |
|
| 2020 |
Floyd R, Hussain K, Mamun A, Gaevski M, Simin G, Chandrashekhar M, Khan A. An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices Physica Status Solidi (a). 217: 1900801. DOI: 10.1002/Pssa.201900801 |
0.277 |
|
| 2019 |
Jewel MU, Alam MD, Mollah S, Hussain K, Wheeler V, Eddy C, Gaevski M, Simin G, Chandrashekhar M, Khan A. Publisher's Note: “Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence” [Appl. Phys. Lett. 115, 213502 (2019)] Applied Physics Letters. 115: 249901. DOI: 10.1063/1.5139436 |
0.267 |
|
| 2020 |
Ejegbavwo OA, Berseneva AA, Martin CR, Leith GA, Pandey S, Brandt AJ, Park KC, Mathur A, Farzandh S, Klepov VV, Heiser BJ, Chandrashekhar M, Karakalos SG, Smith MD, Phillpot SR, et al. Heterometallic multinuclear nodes directing MOF electronic behavior Chemical Science. 11: 7379-7389. DOI: 10.1039/D0Sc03053H |
0.266 |
|
| 2012 |
Chandrashekhar MVS, Chowdhury I, Kaminski P, Kozlowski R, Klein PB, Sudarshan T. High purity semi-insulating 4H-SiC epitaxial layers by defect-competition epitaxy: Controlling Si vacancies Applied Physics Express. 5. DOI: 10.1143/Apex.5.025502 |
0.255 |
|
| 2013 |
Song H, Rana T, Chandrashekhar MVS, Omar SU, Sudarshan TS. Comparison of SiC epitaxial growth from dichlorosilane and tetrafluorosilane precursors Ecs Transactions. 58: 97-109. DOI: 10.1149/05804.0097ecst |
0.249 |
|
| 2017 |
Chava VSN, Barker BG, Balachandran A, Khan A, Simin G, Greytak AB, Chandrashekhar MVS. High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor Applied Physics Letters. 111: 243504. DOI: 10.1063/1.5009003 |
0.246 |
|
| 2014 |
Omar SU, Sudarshan TS, Rana TA, Song H, Chandrashekhar MVS. Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: Testing the limits of Tung's model Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/29/295102 |
0.246 |
|
| 2012 |
Song H, Omar SU, Rana T, Chandrashekhar MVS, Sudarshan TS. In-grown stacking faults in SiC-CVD using dichlorosilane and propane as precursors Materials Science Forum. 717: 121-124. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.121 |
0.246 |
|
| 2020 |
Gaevski M, Mollah S, Hussain K, Letton J, Mamun A, Jewel MU, Chandrashekhar M, Simin G, Khan A. Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1 Applied Physics Express. 13: 94002. DOI: 10.35848/1882-0786/Abb1C8 |
0.233 |
|
| 2013 |
Rana T, Chandrashekhar MVS, Sudarshan TS. Vapor phase surface preparation (etching) of 4H-SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy Journal of Crystal Growth. 380: 61-67. DOI: 10.1016/J.Jcrysgro.2013.05.030 |
0.226 |
|
| 2012 |
Rana T, Chandrashekhar MVS, Sudarshan TS. Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4) precursor for high quality thick silicon carbide (SiC) homoepitaxy Physica Status Solidi (a) Applications and Materials Science. 209: 2455-2462. DOI: 10.1002/Pssa.201228319 |
0.225 |
|
| 2013 |
Sudarshan TS, Rana T, Song H, Chandrashekhar MVS. Trade-off between parasitic deposition and SiC homoepitaxial growth rate using halogenated Si-precursors Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.017308Jss |
0.224 |
|
| 2020 |
Floyd R, Hussain K, Mamun A, Gaevski M, Simin G, Chandrashekhar M, Khan A. Photonics integrated circuits using Al x Ga1−x N based UVC light-emitting diodes, photodetectors and waveguides Applied Physics Express. 13: 022003. DOI: 10.7567/1882-0786/Ab6410 |
0.219 |
|
| 2014 |
Omar SU, Sudarshan TS, Rana TA, Song H, Chandrashekhar MVS. Interface Trap-Induced Nonideality in As-Deposited Ni/4H-SiC Schottky Barrier Diode Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2014.2383386 |
0.197 |
|
| 2012 |
Rana T, Song H, Chandrashekhar MVS, Sudarshan T. Comparison of 4H silicon carbide epitaxial growths at various growth pressures using dicholorosilane and silane gases Materials Science Forum. 717: 117-120. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.117 |
0.191 |
|
| 2010 |
Zhao F, Islam MM, Chandrashekhar MVS, Mandal KC, Sudarshan TS. Investigation of SiO2 cap for Al implant activation in 4H-SiC Materials Research Society Symposium Proceedings. 1246: 99-103. |
0.176 |
|
| 2012 |
Omar SU, Song H, Sudarshan TS, Chandrashekhar MVS. Room temperature photoluminescence from 4H-SiC epilayers: Non-destructive estimation of in-grown stacking fault density Materials Science Forum. 717: 399-402. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.399 |
0.164 |
|
| 2012 |
Rana T, Song H, Chandrashekhar MVS, Sudarshan T. Behavior of particles in the growth reactor and their effect on silicon carbide epitaxial growth Materials Science Forum. 717: 153-156. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.153 |
0.158 |
|
| 2017 |
Muhtadi S, Hwang S, Coleman A, Asif F, Lunev A, Chandrashekhar MVS, Khan A. High temperature operation of n-AlGaN channel metal semiconductor field effect transistors on low-defect AlN templates Applied Physics Letters. 110: 193501. DOI: 10.1063/1.4982656 |
0.137 |
|
| 2007 |
Chandrashekhar MVS, Duggirala R, Lal A, Spencer MG. 4H SiC beta-powered temperature transducer Proceedings of Ieee Sensors. 942-945. DOI: 10.1109/ICSENS.2007.4388558 |
0.121 |
|
| 2013 |
Brown G, Chandrashekhar MVS, Sudarshan TS. High neutron cross-section cladding layers for wide bandgap semiconductors Transactions of the American Nuclear Society. 109: 539-542. |
0.117 |
|
| 2020 |
Ejegbavwo OA, Berseneva AA, Martin CR, Leith GA, Pandey S, Brandt AJ, Park KC, Mathur A, Farzandh S, Klepov VV, Heiser BJ, Chandrashekhar M, Karakalos SG, Smith MD, Phillpot SR, et al. Heterometallic multinuclear nodes directing MOF electronic behavior. Chemical Science. 11: 7379-7389. PMID 34123019 DOI: 10.1039/d0sc03053h |
0.115 |
|
| 2010 |
Chandrashekhar M, Raghunandan BL, Chavannavar SV. Optimization of biopigments production from monascus purpureus using different substrates Journal of Pure and Applied Microbiology. 4: 571-577. |
0.112 |
|
| 2017 |
Muhtadi S, Hwang S, Coleman A, Asif F, Lunev A, Chandrashekhar MVS, Khan A. Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity Applied Physics Letters. 110: 171104. DOI: 10.1063/1.4982599 |
0.108 |
|
| 2014 |
Chandrashekhar M, Ganguli R. Damage assessment of composite plate structures with material and measurement uncertainty Mechanical Systems and Signal Processing. DOI: 10.1016/j.ymssp.2015.12.021 |
0.103 |
|
| 2014 |
Chandrashekhar M, Ganguli R. Damage assessment of composite plate structures with uncertainty 7th European Workshop On Structural Health Monitoring, Ewshm 2014 - 2nd European Conference of the Prognostics and Health Management (Phm) Society. 1109-1114. |
0.094 |
|
| 2020 |
Lyle LAM, Okur S, Chava VSN, Kelley ML, Davis RF, Tompa GS, Chandrashekhar MVS, Greytak AB, Porter LM. Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors Journal of Electronic Materials. 49: 3490-3498. DOI: 10.1007/S11664-020-07985-3 |
0.088 |
|
| 2010 |
Chandrashekhar M, Ganguli R. Nonlinear vibration analysis of composite laminated and sandwich plates with random material properties International Journal of Mechanical Sciences. 52: 874-891. DOI: 10.1016/j.ijmecsci.2010.03.002 |
0.087 |
|
| 2019 |
Mollah S, Gaevski M, Hussain K, Mamun A, Floyd R, Hu X, Chandrashekhar MVS, Simin G, Khan A. Current collapse in high-Al channel AlGaN HFETs Applied Physics Express. 12: 074001. DOI: 10.7567/1882-0786/Ab24B1 |
0.085 |
|
| 2014 |
Hepp F, Bailey SG, McNatt JS, Chandrashekhar MVS, Harris JD, Rusch AW, Nogales KA, Goettsche KV, Hanson W, Amos D, Vendra VK, Woodbury C, Hari P, Roberts KP, Jones AD. Novel materials, Processing and device technologies for space exploration with potential dual-use applications 12th International Energy Conversion Engineering Conference, Iecec 2014. DOI: 10.2514/6.2014-3464 |
0.084 |
|
| 2009 |
Chandrashekhar M, Ganguli R. Uncertainty handling in structural damage detection using fuzzy logic and probabilistic simulation Mechanical Systems and Signal Processing. 23: 384-404. DOI: 10.1016/j.ymssp.2008.03.013 |
0.083 |
|
| 2016 |
Muhtadi S, Hwang SM, Coleman AL, Lunev A, Asif F, Chava VSN, Chandrashekhar MVS, Khan A. High-speed solar-blind UV photodetectors using high-Al content Al0.64Ga0.36N/Al0.34Ga0.66N multiple quantum wells Applied Physics Express. 10: 011004. DOI: 10.7567/APEX.10.011004 |
0.074 |
|
| 2009 |
Chandrashekhar M, Ganguli R. Damage assessment of structures with uncertainty by using mode-shape curvatures and fuzzy logic Journal of Sound and Vibration. 326: 939-957. DOI: 10.1016/j.jsv.2009.05.030 |
0.073 |
|
| 2023 |
McLean MK, Weaver RG, Lane A, Smith MT, Parker H, Stone B, McAninch J, Matolak DW, Burkart S, Chandrashekhar MVS, Armstrong B. A Sliding Scale Signal Quality Metric of Photoplethysmography Applicable to Measuring Heart Rate across Clinical Contexts with Chest Mounting as a Case Study. Sensors (Basel, Switzerland). 23. PMID 37050488 DOI: 10.3390/s23073429 |
0.073 |
|
| 2016 |
Kumar SN, Jayashankar MR, Chandrashekhar M, Pandith V, Nagaraja R, Manju GU. Association of genetic polymorphisms of Calpain and Calpastatin genes with growth traits in Bandur sheep Indian Journal of Animal Sciences. 86: 907-912. |
0.06 |
|
| 1988 |
Gopinath KS, Chandrashekhar M, Kumar MV, Srikant KC. Tensor fasciae latae musculocutaneous flaps to reconstruct skin defects after radical inguinal lymphadenectomy. British Journal of Plastic Surgery. 41: 366-8. PMID 3395767 DOI: 10.1016/0007-1226(88)90075-6 |
0.05 |
|
| 2016 |
Chandrashekhar M, Nayak VL, Ramakrishna S, Mallavadhani UV. Novel triazole hybrids of myrrhanone C, a natural polypodane triterpene: Synthesis, cytotoxic activity and cell based studies European Journal of Medicinal Chemistry. 114: 293-307. DOI: 10.1016/j.ejmech.2016.03.013 |
0.05 |
|
| 2001 |
Chandrashekhar MVS, Choi P, Maver K, Sieber R, Pahlavan K. Evaluation of interference between IEEE 802.11b and Bluetooth in a typical office environment Ieee International Symposium On Personal, Indoor and Mobile Radio Communications, Pimrc. 1. |
0.049 |
|
| 2015 |
Mallavadhani UV, Chandrashekhar M, Nayak VL, Ramakrishna S. Synthesis and anticancer activity of novel fused pyrimidine hybrids of myrrhanone C, a bicyclic triterpene of Commiphora mukul gum resin. Molecular Diversity. 19: 745-57. PMID 26232027 DOI: 10.1007/s11030-015-9621-3 |
0.049 |
|
| 2011 |
Chopra PK, Kumar S, Bala Jain S, Chandrashekhar MG. Numerical simulation of dispersive Alfvén wave turbulence in auroral plasmas affecting the Earth's communications Physica Scripta. 84. DOI: 10.1088/0031-8949/84/06/065502 |
0.048 |
|
| 2016 |
Preetam CS, Chandrashekhar M, Gunaranjan T, Kumar SK, Miskeen Sahib SA, Kumar MS. A comparative evaluation of two rotary Ni-Ti instruments in the removal of gutta-percha during retreatment. Journal of International Society of Preventive & Community Dentistry. 6: S131-S136. PMID 27652245 DOI: 10.4103/2231-0762.189740 |
0.046 |
|
| 2015 |
Hart T, Chandrashekhar M, Aregger M, Steinhart Z, Brown KR, MacLeod G, Mis M, Zimmermann M, Fradet-Turcotte A, Sun S, Mero P, Dirks P, Sidhu S, Roth FP, Rissland OS, et al. High-Resolution CRISPR Screens Reveal Fitness Genes and Genotype-Specific Cancer Liabilities. Cell. PMID 26627737 DOI: 10.1016/J.Cell.2015.11.015 |
0.045 |
|
| 2011 |
Tandon R, Tandon A, Abrari A, Chandrashekhar M, Das P, Bansal B. Juvenile psammomatoid ossifying fibroma: a rare cause of unilateral proptosis. Bmj Case Reports. 2011. PMID 22689605 DOI: 10.1136/bcr.05.2011.4195 |
0.045 |
|
| 2024 |
Armstrong B, Weaver RG, McAninch J, Smith MT, Parker H, Lane AD, Wang Y, Pate R, Rahman M, Matolak D, Chandrashekhar MVS. Development and Calibration of a PATCH Device for Monitoring Children's Heart Rate and Acceleration. Medicine and Science in Sports and Exercise. PMID 38377012 DOI: 10.1249/MSS.0000000000003404 |
0.045 |
|
| 2010 |
Kumara Swamy CA, Raghunandan BL, Chandrashekhar M, Brahmaprakash GP. Bio-activation of rock phosphate vis-a-vis seed treatment with phosphorus solubilizing microbes (PSM) in enhancing P nutrition in cowpea and ragi Indian Journal of Science and Technology. 3: 689-692. DOI: 10.17485/ijst/2010/v3i6/29785 |
0.041 |
|
| 2009 |
Chandrashekhar M, Ganguli R. Structural damage detection using modal curvature and fuzzy logic Structural Health Monitoring. 8: 267-282. DOI: 10.1177/1475921708102088 |
0.04 |
|
| 2003 |
Chandrashekhar MB, Singh S, Roy PS. Geospatial modelling techniques for rapid assessment of phytodiversity at landscape level in western Himalayas, Himachal Pradesh Current Science. 84: 663-670. |
0.04 |
|
| 2016 |
Chang Q, Chandrashekhar M, Ketela T, Fedyshyn Y, Moffat J, Hedley D. Cytokinetic effects of Wee1 disruption in pancreatic cancer. Cell Cycle (Georgetown, Tex.). 0. PMID 26890070 DOI: 10.1080/15384101.2016.1138188 |
0.037 |
|
| 2006 |
Puri D, Samra NS, Mehrishi S, Sahoo M, Chandrashekhar M, Samra SS. Surgical management of a giant bronchial carcinoid with massive hemoptysis Indian Journal of Thoracic and Cardiovascular Surgery. 22: 227-229. DOI: 10.1007/s12055-006-0009-y |
0.036 |
|
| 2014 |
Chandrashekhar M, Ganguli R. Large deformation dynamic finite element analysis of delaminated composite plates using contact-impact conditions Computers and Structures. 144: 92-102. DOI: 10.1016/j.compstruc.2014.07.025 |
0.033 |
|
| 2011 |
Kumar S, Kumar V, Chandrashekhar MS. In-vitro anti-oxidant and alpha-amylase inhibitory activity of isolated fractions from methanolic extract of asystasia dalzelliana leaves International Journal of Pharmtech Research. 3: 889-894. |
0.03 |
|
| 2011 |
Kumar S, Kumar V, Chandrashekhar MS. Cytotoxic activity of isolated fractions from methanolic extract of Asystasia dalzelliana leaves by brine shrimp lethality bioassay International Journal of Pharmacy and Pharmaceutical Sciences. 3: 133-134. |
0.029 |
|
| 2012 |
Shinde RS, Nagarathna S, Mantur BG, Walvekar RR, Parande MV, Parande AM, Jhyaneshwar KB, Chandrashekhar MR. Syphilitic aneurysm - A case report. Indian Journal of Sexually Transmitted Diseases. 33: 145-6. PMID 23188945 DOI: 10.4103/0253-7184.102136 |
0.028 |
|
| 2010 |
Parande MV, Shinde RS, Mantur BG, Parande AM, Chandrashekhar MR, Aralikatti PS, Palled E. A fatal case of empyema thoracis by Nocardia farcinica in an immunocompromised patient Indian Journal of Medical Microbiology. 28: 390-392. PMID 20966578 DOI: 10.4103/0255-0857.71831 |
0.025 |
|
| 2005 |
Chandrashekhar MB, Saran S, Raju PLN, Roy PS. Forest canopy density stratification: How relevant is biophysical spectral response modelling approach? Geocarto International. 20: 15-21. DOI: 10.1080/10106040508542332 |
0.024 |
|
| 2013 |
Vizeacoumar FJ, Arnold R, Vizeacoumar FS, Chandrashekhar M, Buzina A, Young JT, Kwan JH, Sayad A, Mero P, Lawo S, Tanaka H, Brown KR, Baryshnikova A, Mak AB, Fedyshyn Y, et al. A negative genetic interaction map in isogenic cancer cell lines reveals cancer cell vulnerabilities. Molecular Systems Biology. 9: 696. PMID 24104479 DOI: 10.1038/Msb.2013.54 |
0.024 |
|
| 2011 |
Pathak S, Chandrashekhar M, Wankhede GR. Type and screen policy in the blood bank: Is AHG cross-match still required? A study at a multispecialty corporate hospital in India. Asian Journal of Transfusion Science. 5: 153-6. PMID 21897595 DOI: 10.4103/0973-6247.83242 |
0.023 |
|
| 2013 |
Pathak S, Chandrashekhar M. Transfusion transmittable infections - Seroprevalence among blood donors in a tertiary care hospital of Delhi. Asian Journal of Transfusion Science. 7: 116-8. PMID 24014940 DOI: 10.4103/0973-6247.115566 |
0.022 |
|
| 1994 |
Doval DC, Kannan V, Acharya R, Mukherjee G, Chandrashekhar M, Bapsy PP. Bronchial embryonal rhabdomyosarcoma-a case report Acta Oncologica. 33: 832-833. PMID 7993655 DOI: 10.3109/02841869409083957 |
0.014 |
|
| 2011 |
Reddy NS, Kumar CBM, Ramesh A, Chandrashekhar MS. Development and in vitro evaluation of gastro retentive matrix tablets: An approach using natural gums and polymers Research Journal of Pharmaceutical, Biological and Chemical Sciences. 2: 90-107. |
0.013 |
|
| 2011 |
Tandon A, Tandon R, Chandrashekhar M, Das P, Bansal B, Bhatia N. Cervical ectopic thymic cyst: a rare preoperative diagnosis. Bmj Case Reports. 2011. PMID 22679153 DOI: 10.1136/bcr.05.2011.4250 |
0.013 |
|
| 2013 |
Parande MV, Mantur BG, Parande AM, Shinde RS, Roy S, Jnaneshwar KB, Chandrashekhar MR. Seroprevalence of human immunodeficiency virus & hepatitis B virus co-infection in Belgaum, southern India. The Indian Journal of Medical Research. 138: 364-5. PMID 24135183 |
0.01 |
|
| 2011 |
Abrari A, Mukherjee U, Tandon R, Chandrashekhar M. Round cell epithelioid GIST (gastrointestinal stromal tumour) in an endoscopic biopsy is a diagnostic confounder Bmj Case Reports. 2011. PMID 22669962 DOI: 10.1136/bcr.10.2011.4996 |
0.01 |
|
| 2010 |
Abrari A, Mukherjee U, Tandon R, Chandrashekhar M, Das P, Bansal B. Bizarre endothelial reaction: histological mimicry of epithelial malignancy in gastric endoscopic biopsy Bmj Case Reports. 2010. PMID 22802484 |
0.01 |
|
| 2008 |
Chandrashekhar M. Stem cell quackery Indian Journal of Medical Ethics. 5: 198. PMID 18990785 |
0.01 |
|
| 2007 |
Shinde R, Rituparna S, Shinde S, Suresh S, Makhale C, Chandrashekhar M, Grant P, Purvez G, Sathe S, Sunil S, Durairaj M, Durairaj M, Lokhandwala Y, Yash L, Di Diego J, et al. Occurrence of "J waves" in 12-lead ECG as a marker of acute ischemia and their cellular basis. Pacing and Clinical Electrophysiology : Pace. 30: 817-9. PMID 17547622 DOI: 10.1111/j.1540-8159.2007.00760.x |
0.01 |
|
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