Umberto Ravaioli - Publications

Affiliations: 
Electrical and Computer Engineering University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics

162 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Manjunath M, Zhang Y, Yeo SH, Sobh O, Russell N, Followell C, Bushell C, Ravaioli U, Song JS. ClusterEnG: an interactive educational web resource for clustering and visualizing high-dimensional data. Peerj. Computer Science. 4. PMID 30906871 DOI: 10.7717/peerj-cs.155  0.52
2015 Park KH, Martin PN, Ravaioli U. Electronic and thermal transport study of sinusoidally corrugated nanowires aiming to improve thermoelectric efficiency. Nanotechnology. 27: 035401. PMID 26650977 DOI: 10.1088/0957-4484/27/3/035401  1
2015 Park KH, Martin PN, Ravaioli U. Enhancement of thermoelectric efficiency in non-uniform semiconductor nanowires Journal of Physics: Conference Series. 647. DOI: 10.1088/1742-6596/647/1/012053  1
2015 Mohamed M, Aksamija Z, Ravaioli U. Coupled electron and thermal transport simulation of self-heating effects in junctionless MOSFET Journal of Physics: Conference Series. 647. DOI: 10.1088/1742-6596/647/1/012026  1
2015 Park KH, Mohamed M, Aksamija Z, Ravaioli U. Phonon scattering due to van der Waals forces in the lattice thermal conductivity of Bi2Te3 thin films Journal of Applied Physics. 117. DOI: 10.1063/1.4905294  1
2014 Mohamed M, Aksamija Z, Vitale W, Hassan F, Park KH, Ravaioli U. A conjoined electron and thermal transport study of thermal degradation induced during normal operation of multigate transistors Ieee Transactions On Electron Devices. 61: 976-983. DOI: 10.1109/TED.2014.2306422  1
2013 Chen Y, Mohamed M, Jo M, Ravaioli U, Xu R. Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications Journal of Computational Electronics. 12: 757-764. DOI: 10.1007/s10825-013-0478-3  1
2012 Dietrich C, Hart J, Raila D, Ravaioli U, Sobh N, Sobh O, Taylor C. InvertNet: a new paradigm for digital access to invertebrate collections. Zookeys. 165-81. PMID 22859886 DOI: 10.3897/zookeys.209.3571  1
2012 Estrada ZJ, Dellabetta B, Ravaioli U, Gilbert MJ. Phonon-limited transport in graphene pseudospintronic devices Ieee Electron Device Letters. 33: 1465-1467. DOI: 10.1109/LED.2012.2207701  1
2012 Estrada ZJ, Dellabetta B, Ravaioli U, Gilbert MJ. Phonon limited transport in graphene pseudospintronic devices Device Research Conference - Conference Digest, Drc. 87-88. DOI: 10.1109/DRC.2012.6256952  1
2011 Giusi G, Iannaccone G, Crupi F, Ravaioli U. A backscattering model incorporating the effective carrier temperature in Nano-MOSFET Ieee Electron Device Letters. 32: 853-855. DOI: 10.1109/LED.2011.2145352  1
2010 Toghraee R, Lee KI, Papke D, Chiu SW, Jakobsson E, Ravaioli U. SIMULATION OF ION CONDUCTION IN α-HEMOLYSIN NANOPORES WITH COVALENTLY ATTACHED β-CYCLODEXTRIN BASED ON BOLTZMANN TRANSPORT MONTE CARLO MODEL. Journal of Computational and Theoretical Nanoscience. 7: 2555-2567. PMID 20938493 DOI: 10.1166/jctn.2010.1642  1
2010 Martin PN, Aksamija Z, Pop E, Ravaioli U. Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires. Nano Letters. 10: 1120-4. PMID 20222669 DOI: 10.1021/nl902720v  1
2010 Lee KI, Toghraee R, Jakobsson E, Ravaioli U. A study of Brownian dynamics simulation for ion transport through a transmembrane pore with a molecular adapter Journal of Computational and Theoretical Nanoscience. 7: 2547-2554. DOI: 10.1166/jctn.2010.1641  1
2010 Ravaioli U. A special issue on nanoscale simulation of molecular and biological systems Journal of Computational and Theoretical Nanoscience. 7: 2479-2480. DOI: 10.1166/jctn.2010.1635  1
2010 Ni C, Aksamija Z, Murthy JY, Ravaioli U. Coupled electro-thermal simulation of MOSFETs Proceedings of the Asme Interpack Conference 2009, Ipack2009. 1: 161-173. DOI: 10.1115/InterPACK2009-89182  1
2010 Ravaioli U. Advanced methods for silicon device modeling 2010 10th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems, Sirf 2010 - Digest of Papers. 168-171. DOI: 10.1109/SMIC.2010.5422994  1
2010 Lee W, Ravaioli U. A simple and efficient method for the calculation of carrier-carrier scattering in Monte-Carlo simulations International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 131-134. DOI: 10.1109/SISPAD.2010.5604550  1
2010 Toghraee R, Lee KI, Ravaioli U. Simulation of Ion permeation in biological membranes Computing in Science and Engineering. 12: 43-47. DOI: 10.1109/MCSE.2010.46  1
2010 Vitale W, Mohamed M, Ravaioli U. Monte Carlo study of transport properties in junctionless transistors 2010 14th International Workshop On Computational Electronics, Iwce 2010. 243-245. DOI: 10.1109/IWCE.2010.5677969  1
2010 Aksamija Z, Ravaioli U. Anharmonic decay of g-process longitudinal optical phonons in silicon Applied Physics Letters. 96. DOI: 10.1063/1.3350894  1
2009 Toghraee R, Mashl RJ, Lee KI, Jakobsson E, Ravaioli U. Simulation of charge transport in ion channels and nanopores with anisotropic permittivity. Journal of Computational Electronics. 8: 98-109. PMID 20445807 DOI: 10.1007/s10825-009-0272-4  1
2009 Wang HL, Toghraee R, Papke D, Cheng XL, McCammon JA, Ravaioli U, Sine SM. Single-channel current through nicotinic receptor produced by closure of binding site C-loop. Biophysical Journal. 96: 3582-90. PMID 19413963 DOI: 10.1016/j.bpj.2009.02.020  1
2009 Martin P, Aksamija Z, Pop E, Ravaioli U. Impact of phonon-surface roughness scattering on thermal conductivity of thin si nanowires. Physical Review Letters. 102: 125503. PMID 19392295 DOI: 10.1103/PhysRevLett.102.125503  1
2009 Mohamed M, Aksamija Z, Godoy A, Martin P, Hahm HS, Lee W, Lee KII, Ravaioli U. Size effects and performance assessment in nanoscale multigate MOSFET structures Journal of Computational and Theoretical Nanoscience. 6: 1927-1936. DOI: 10.1166/jctn.2009.1248  1
2009 Aksamija Z, Mohamed MY, Ravaioli U. Parallel implementation of Boltzmann Transport Simulation of carbon nanotubes Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091137  1
2009 Aksamija Z, Ravaioli U. Anharmonic decay of non-equilibrium intervalley phonons in silicon Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012033  1
2009 Martin PN, Aksamija Z, Pop E, Ravaioli U. Prediction of reduced thermal conductivity in nano-engineered rough semiconductor nanowires Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012010  1
2009 Martin PN, Ravaioli U. Green function treatment of electronic transport in narrow rough semiconductor conduction channels Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012009  1
2009 Giusi G, Iannaccone G, Ravaioli U. Time-dependent analysis of low VDD program operation in double-gate SONOS memories by full-band Monte Carlo simulation Journal of Applied Physics. 106. DOI: 10.1063/1.3259409  1
2009 Aksamija Z, Ravaioli U. Energy conservation in collision broadening over a sequence of scattering events in semiclassical Monte Carlo simulation Journal of Applied Physics. 105. DOI: 10.1063/1.3116544  1
2008 Giusi G, Iannaccone G, Mohamed M, Ravaioli U. Study of warm-electron injection in double-gate SONOS by full-band Monte Carlo simulation Ieee Electron Device Letters. 29: 1242-1244. DOI: 10.1109/LED.2008.2004784  1
2008 Bi X, East JR, Ravaioli U, Haddad GI. A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation Solid-State Electronics. 52: 688-694. DOI: 10.1016/j.sse.2007.10.035  1
2008 Aksamija Z, Ravaioli U. Boltzman transport simulation of single-walled carbon nanotubes Journal of Computational Electronics. 7: 315-318. DOI: 10.1007/s10825-008-0221-7  1
2008 Mohamed M, Godoy A, Ravaioli U. 3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET Journal of Computational Electronics. 7: 217-221. DOI: 10.1007/s10825-008-0187-5  1
2008 Mohamed M, Martin P, Ravaioli U. 3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 39-42. DOI: 10.1002/pssc.200776569  1
2008 Aksamija Z, Hahm HS, Ravaioli U. Emission and absorption of phonons in silicon Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 90-93. DOI: 10.1002/pssc.200776563  1
2008 Aksamija Z, Ravaioli U. Efficient numerical solution of the 3-D semiconductor poisson equation for Monte Carlo device simulation Cmes - Computer Modeling in Engineering and Sciences. 37: 45-63.  1
2007 Aksamija Z, Ravaioli U. Phonon heat dissipation in silicon 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422404  1
2007 Aksamija Z, Ravaioli U. Joule heating and phonon transport in nanoscale silicon MOSFETs 2007 Ieee International Conference On Electro/Information Technology, Eit 2007. 70-72. DOI: 10.1109/EIT.2007.4374433  1
2007 Li Y, Ravaioli U. Chapter 6 Semi-empirical simulations of carbon nanotube properties under electronic perturbations Theoretical and Computational Chemistry. 17: 163-186. DOI: 10.1016/S1380-7323(07)80024-0  1
2007 Ravaioli U. Simulation of Nanoscale Electronic Systems Advances in Computers. 71: 167-249. DOI: 10.1016/S0065-2458(06)71004-X  1
2007 Godoy A, Ruiz F, Sampedro C, Gámiz F, Ravaioli U. Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs Solid-State Electronics. 51: 1211-1215. DOI: 10.1016/j.sse.2007.07.025  1
2007 Aksamija Z, Ravaioli U. Energy conservation in collisional broadening 2007 International Conference On Simulation of Semiconductor Processes and Devices, Sispad 2007. 73-76.  1
2006 Sotomayor M, Van Der Straaten TA, Ravaioli U, Schulten K. Electrostatic properties of the mechanosensitive channel of small conductance MscS Biophysical Journal. 90: 3496-3510. PMID 16513774 DOI: 10.1529/biophysj.105.080069  1
2006 Li Y, Ravaioli U, Rotkin SV. Metal-semiconductor transition and Fermi velocity renormalization in metallic carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/PhysRevB.73.035415  1
2006 Bi X, East JR, Ravaioli U, Haddad GI. Analysis and design of Si terahertz transit-time diodes Solid-State Electronics. 50: 889-896. DOI: 10.1016/j.sse.2006.04.007  1
2006 Kwon HI, Ravaioli U. Simulation of electronic/ionic mixed conduction in solid ionic memory devices Microelectronics Journal. 37: 1047-1051. DOI: 10.1016/j.mejo.2006.04.009  1
2006 Guo B, Ravaioli U, Staedele M. Full band Monte Carlo calculations of velocity-field characteristics of wurtzite ZnO Computer Physics Communications. 175: 482-486. DOI: 10.1016/j.cpc.2006.06.008  1
2006 Aksamija Z, Ravaioli U. Joule heating and phonon transport in silicon MOSFETs Journal of Computational Electronics. 5: 431-434. DOI: 10.1007/s10825-006-0045-2  1
2006 Aksamija Z, Ravaioli U. Meshless solution of the 3-D semiconductor Poisson equation Journal of Computational Electronics. 5: 459-462. DOI: 10.1007/s10825-006-0040-7  1
2006 Eschermann JF, Li Y, Van der Straaten TA, Ravaioli U. Self-consistent ion transport simulation in carbon nanotube channels Journal of Computational Electronics. 5: 455-457. DOI: 10.1007/s10825-006-0039-0  1
2006 Chen Y, Ravaioli U. Band structure based nonuniform Brillouin zone tetrahedron approach Jisuan Wuli/Chinese Journal of Computational Physics. 23: 477-482.  1
2005 Li Y, Lu D, Schulten K, Ravaioli U, Rotkin SV. Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes. Journal of Computational Electronics. 4: 161-165. PMID 18958297 DOI: 10.1007/s10825-005-7130-9  1
2005 Lu D, Li Y, Ravaioli U, Schulten K. Empirical nanotube model for biological applications. The Journal of Physical Chemistry. B. 109: 11461-7. PMID 16852403 DOI: 10.1021/jp050420g  1
2005 Lu D, Li Y, Ravaioli U, Schulten K. Ion-nanotube terahertz oscillator. Physical Review Letters. 95: 246801. PMID 16384404 DOI: 10.1103/PhysRevLett.95.246801  1
2005 Van Der Straaten TA, Kathawala G, Trellakis A, Eisenberg RS, Ravaioli U. BioMOCA - A Boltzmann transport Monte Carlo model for ion channel simulation Molecular Simulation. 31: 151-171. DOI: 10.1080/08927020412331308700  1
2005 Godoy A, Yang Z, Ravaioli U, Gámiz F. Effects of nonparabolic bands in quantum wires Journal of Applied Physics. 98. DOI: 10.1063/1.1940143  1
2005 Lee KI, Park YJ, van der Straaten T, Kathawala G, Ravaioli U. Simulation of ion conduction in the ompF porin channel using BioMOCA Journal of Computational Electronics. 4: 157-160. DOI: 10.1007/s10825-005-7129-2  1
2005 Ravishankar R, Kathawala G, Ravaioli U, Hasan S, Lundstrom M. Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs Journal of Computational Electronics. 4: 39-43. DOI: 10.1007/s10825-005-7104-y  1
2005 Kathawala GA, Van Der Straaten T, Ravaioli U. Application of grid focusing methodology to transport Monte Carlo model for ion channel simulations 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 544-547.  1
2004 Fan XF, Wang X, Winstead B, Register LF, Ravaioli U, Banerjee SK. MC simulation of strained-Si MOSFET with full-band structure and quantum correction Ieee Transactions On Electron Devices. 51: 962-970. DOI: 10.1109/TED.2004.828296  1
2004 Guan D, Ravaioli U, Peralta XG, Allen SJ, Wanke M. Green's function simulation of terahertz photoconductivity in double quantum well field effect transistors Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/146  1
2004 Li Y, Rotkin SV, Ravaioli U. Metal-semiconductor transition in armchair carbon nanotubes by symmetry breaking Applied Physics Letters. 85: 4178-4180. DOI: 10.1063/1.1811792  1
2004 Lu D, Li Y, Rotkin SV, Ravaioli U, Schulten K. Finite-size effect and wall polarization in a carbon nanotube channel Nano Letters. 4: 2383-2387. DOI: 10.1021/nl0485511  1
2004 Trellakis A, Ravaioli U. Directional effects on bound quantum states for trench oxide quantum wires on (1 0 0)-silicon Solid-State Electronics. 48: 367-371. DOI: 10.1016/j.sse.2003.08.006  1
2004 Guo B, Ravaioli U, Song D. Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach Microelectronics Journal. 35: 117-123. DOI: 10.1016/j.mejo.2003.10.007  1
2004 Yang Z, Van Der Straaten TA, Ravaioli U. A coupled 3-D PNP/ECP model for ion transport in biological ion channels 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 135-136. DOI: 10.1007/s10825-005-7131-8  1
2004 Van Der Straaten TA, Kathawala G, Ravaioli U. BioMOCA: A transport Monte Carlo approach to ion channel simulation 2004 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2004. 1: 139-142.  1
2004 Li Y, Lu D, Rotkin SV, Schulten K, Ravaioli U. Electronic structure and dielectric behavior of finite-length single-walled carbon nanotubes 2004 4th Ieee Conference On Nanotechnology. 273-275.  1
2003 Kathawala GA, Winstead B, Ravaioli U. Monte Carlo Simulations of Double-Gate MOSFETs Ieee Transactions On Electron Devices. 50: 2467-2473. DOI: 10.1109/TED.2003.819699  1
2003 Winstead B, Ravaioli U. A quantum correction based on Schrödinger equation applied to Monte Carlo device simulation Ieee Transactions On Electron Devices. 50: 440-446. DOI: 10.1109/TED.2003.809431  1
2003 Li Y, Rotkin SV, Ravaioli U. Influence of external electric fields on electronic response and bandstructure of carbon nanotubes Proceedings of the Ieee Conference On Nanotechnology. 1: 1-4. DOI: 10.1109/NANO.2003.1231699  1
2003 Li Y, Rotkin SV, Ravaioli U. Electronic response and bandstructure modulation of carbon nanotubes in a transverse electrical field Nano Letters. 3: 183-187. DOI: 10.1021/nl0259030  1
2003 Kathawala GA, Ravaioli U. 3-D Monte Carlo Simulations of FinFETs Technical Digest - International Electron Devices Meeting. 683-686.  1
2003 Guo BZ, Sun RX, Ravaioli U. Two dimensional full band, ensemble Monte Carlo simulation of wutzite GaN static induction transistors (SITs) Tien Tzu Hsueh Pao/Acta Electronica Sinica. 31: 1121-1124.  1
2003 Guo B, Wang Y, Zong X, Sun R, Song D, Ravaioli U, Staedele M. Theoretical study of electron transport in ZnO Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 24: 723-728.  1
2003 Guan D, Ravaioli U, Giannetta RW, Hannan M, Adesida I, Melloch MR. Nonequilibrium Green's function method for a quantum Hall device in a magnetic field Physical Review B - Condensed Matter and Materials Physics. 67: 2053281-2053289.  1
2003 Van Der Straaten TA, Kathawala G, Kuang Z, Boda D, Chen DP, Ravaioli U, Eisenberg RS, Henderson D. Equilibrium structure of electrolyte calculated using equilibrium Monte Carlo, molecular dynamics and boltzmann transport Monte Carlo simulations 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 3: 447-451.  1
2002 Guan D, Ravaioli U. Green's function simulation of quantum structures including magnetic field Proceedings of the Ieee Conference On Nanotechnology. 2002: 413-416. DOI: 10.1109/NANO.2002.1032278  1
2002 Guo B, Ravaioli U, Song D. Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2002: 87-90. DOI: 10.1109/COMMAD.2002.1237199  1
2002 Trellakis A, Ravaioli U. Three-dimensional spectral solution of the Schrödinger equation for arbitrary band structures Journal of Applied Physics. 92: 3711-3716. DOI: 10.1063/1.1502181  1
2002 Jakumeit J, Ravaioli U. Influence of electron-electron scattering on the hot electron distribution in ultra-short Si-MOSFETs Physica B: Condensed Matter. 314: 363-366. DOI: 10.1016/S0921-4526(01)01426-0  1
2002 Guan D, Ravaioli U. 3-D simulation of directional transport in coupled nanoscale MOS channels Physica B: Condensed Matter. 314: 372-376. DOI: 10.1016/S0921-4526(01)01416-8  1
2002 Guo B, Wang Y, Ravaioli U, Staedele M. Comparison between three-valley model and full band model in Monte Carlo simulation of bulk wurtzite GaN Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 23: 113-119.  1
2002 Van Der Straaten T, Varma S, Chiu SW, Tang J, Aluru N, Eisenberg R, Ravaioli U, Jakobsson E. Combining computational chemistry and computational electronics to understand protein ion channels 2002 International Conference On Computational Nanoscience and Nanotechnology - Iccn 2002. 60-63.  1
2001 Aktas O, Aluru NR, Ravaioli U. Application of a parallel DSMC technique to predict flow characteristics in microfluidic filters Journal of Microelectromechanical Systems. 10: 538-549. DOI: 10.1109/84.967377  1
2001 Mietzner T, Jakumeit J, Ravaioli U. Local iterative Monte Carlo analysis of electron-electron interaction in short-channel Si-MOSFETs Ieee Transactions On Electron Devices. 48: 2323-2330. DOI: 10.1109/16.954472  1
2001 Jakumeit J, Ravaioli U. Semiconductor transport simulation with the local iterative Monte Carlo technique Ieee Transactions On Electron Devices. 48: 946-955. DOI: 10.1109/16.918243  1
2001 Tsuchiya H, Ravaioli U. Particle Monte Carlo simulation of quantum phenomena in semiconductor nanostructures Journal of Applied Physics. 89: 4023-4029. DOI: 10.1063/1.1354653  1
2001 Winstead B, Ravaioli U. A coupled schrödinger/Monte Carlo technique for quantum-corrected device simulation Annual Device Research Conference Digest. 169-170.  1
2001 Trellakis A, Ravaioli U. Three-dimensional spectral solution of Schrödinger equation Vlsi Design. 13: 341-347.  1
2001 Kepkep A, Ravaioli U, Winstead B. Cluster-based parallel 3-D Monte Carlo device simulation Vlsi Design. 13: 51-56.  1
2001 Mietzner T, Jakumeit J, Ravaioli U. Influence of electron - Electron interaction on electron distributions in short Si-MOSFETs analysed using the local iterative Monte Carlo technique Vlsi Design. 13: 175-178.  1
2001 Jakumeit J, Mietzner T, Ravaioli U. Efficient silicon device simulation with the Local Iterative Monte Carlo method Vlsi Design. 13: 57-61.  1
2001 Tsuchiya H, Winstead B, Ravaioli U. Quantum potential approaches for nano-scale device simulation Vlsi Design. 13: 335-340.  1
2001 Winstead B, Tsuchiya H, Ravaioli U. An approach to quantum correction in Monte Carlo device simulation 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 566-569.  1
2001 Hess K, Ravaioli U, Gupta M, Aluru N, Van Der Straaten T, Eisenberg RS. Simulation of biological ionic channels by Technology Computer-Aided Design Vlsi Design. 13: 179-187.  1
2001 Van Der Straaten TA, Tang J, Eisenberg RS, Ravaioli U, Aluru N. Three-dimensional continuum simulation of biological ion channels 2001 International Conference On Computational Nanoscience - Iccn 2001. 39-42.  1
2000 Winstead B, Ravaioli U. Simulation of Schottky barrier MOSFET's with a coupled quantum injection/Monte Carlo technique Ieee Transactions On Electron Devices. 47: 1241-1246. DOI: 10.1109/16.842968  1
2000 Wordelman CJ, Ravaioli U. Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices Ieee Transactions On Electron Devices. 47: 410-416. DOI: 10.1109/16.822288  1
2000 Ravaioli U, Winstead B, Wordelman C, Kepkep A. Monte Carlo simulation for ultra-small MOS devices Superlattices and Microstructures. 27: 137-145. DOI: 10.1006/spmi.1999.0802  1
2000 Trellakis A, Ravaioli U. Computational issues in the simulation of semiconductor quantum wires Computer Methods in Applied Mechanics and Engineering. 181: 437-449.  1
2000 Wordelman CJ, Aluru NR, Ravaioli U. A meshless method for the numerical solution of the 2- and 3-D semiconductor Poisson equation Cmes - Computer Modeling in Engineering and Sciences. 1: 121-126.  1
1999 Hess K, Register LF, McMahon W, Tuttle B, Aktas O, Ravaioli U, Lyding JW, Kizilyalli IC. Theory of channel hot-carrier degradation in MOSFETs Physica B: Condensed Matter. 272: 527-531. DOI: 10.1016/S0921-4526(99)00363-4  1
1999 Wordelman CJ, Ravaioli U. 3-D granular Monte Carlo simulation of silicon n-MOSFETs Physica B: Condensed Matter. 272: 568-571. DOI: 10.1016/S0921-4526(99)00340-3  1
1999 Ravaioli U, Balasubramanian M, Aktas O. Link between hot electrons and interface damage in n-MOSFETs: A Monte Carlo analysis Physica B: Condensed Matter. 272: 542-545. DOI: 10.1016/S0921-4526(99)00336-1  1
1999 Trellakis A, Ravaioli U. Lateral scalability limits of silicon conduction channels Journal of Applied Physics. 86: 3911-3916.  1
1998 Duncan A, Ravaioli U, Jakumeit J. Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors Ieee Transactions On Electron Devices. 45: 867-876. DOI: 10.1109/16.662792  1
1998 Ravaioli U. Hierarchy of simulation approaches for hot carrier transport in deep submicron devices Semiconductor Science and Technology. 13: 1-10. DOI: 10.1088/0268-1242/13/1/002  1
1998 Jakumeit J, Ravaioli U, Hess K. New approach to hot electron effects in Si-MOSFETs based on an evolutionary algorithm using a Monte Carlo like mutation operator Vlsi Design. 6: 307-311.  1
1998 Macucci M, Galick AT, Ravaioli U. Tunneling between multimode stacked quantum wires Vlsi Design. 8: 247-252.  1
1998 Patil MB, Ravaioli U, Kerkhoven T. Numerical evaluation of iterative schemes for drift-diffusion simulation Vlsi Design. 8: 337-341.  1
1998 Iannaccone G, Trellakis A, Ravaioli U. Simulation of a quantum-dot flash memory Journal of Applied Physics. 84: 5032-5036.  1
1998 Jakumeit J, Duncan A, Ravaioli U, Hess K. Simulation of Si-MOSFETs with the mutation operator Monte Carlo method Vlsi Design. 8: 343-347.  1
1998 Trellakis A, Galick AT, Pacelli A, Ravaioli U. Comparison of iteration schemes for the solution of the multidimensional Schrödinger-Poisson equations Vlsi Design. 8: 105-109.  1
1998 Ravaioli U, Duncan A, Pacelli A, Wordelman C, Hess K. Hierarchy of full band structure models for Monte Carlo simulation Vlsi Design. 6: 147-153.  1
1998 Yamakawa S, Ueno H, Taniguchi K, Hamaguchi C, Miyatsuji K, Masaki K, Ravaioli U. Electron mobility and Monte Carlo device simulation of MOSFETs Vlsi Design. 6: 27-30.  1
1997 Pacelli A, Ravaioli U. Analysis of variance-reduction schemes for ensemble monte carlo simulation of semiconductor devices Solid-State Electronics. 41: 599-605.  1
1997 Trellakis A, Galick AJ, Ravaioli U. Rational Chebyshev approximation for the Fermi-Dirac integral ℱ-3/2(x) Solid-State Electronics. 41: 771-773.  1
1997 Jakumeit J, Duncan A, Ravaioli U, Hess K. Calculation of the high energy tail of the electron distribution in Si-MOSFETs with an evolutionary algorithm Physica Status Solidi (B) Basic Research. 204: 517-520.  1
1997 Trellakis A, Galick AT, Pacelli A, Ravaioli U. Iteration schema for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures Journal of Applied Physics. 81: 7880-7884.  1
1996 Ravaioli U, Lee CH, Patil MB. Monte Carlo simulation of microwave devices Mathematical and Computer Modelling. 23: 167-179.  1
1996 Singh T, Zhu M, Thakkar U, Ravaioli U. Impact of World Wide Web, Java, and virtual environments on education in computational science and engineering Proceedings - Frontiers in Education Conference. 3: 1007-1009.  1
1996 Jakumeit J, Ravaioli U, Hess K. Calculation of hot electron distributions in silicon by means of an evolutionary algorithm Journal of Applied Physics. 80: 5061-5066.  1
1996 Yamakawa S, Ueno H, Taniguchi K, Hamaguchi C, Miyatsuji K, Masaki K, Ravaioli U. Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method Journal of Applied Physics. 79: 911-916.  1
1995 Kan EC, Yu Z, Dutton RW, Chen D, Ravaioli U. Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices Vlsi Design. 3: 211-224. DOI: 10.1155/1995/12686  1
1995 Lee CH, Ravaioli U, Hess K, Mead CA, Hasler P. Simulation of a Long Term Memory Device with a Full Bandstructure Monte Carlo Approach Ieee Electron Device Letters. 16: 360-362. DOI: 10.1109/55.400738  1
1995 Macucci M, Galick A, Ravaioli U. Quasi-three-dimensional Green's-function simulation of coupled electron waveguides Physical Review B. 52: 5210-5220. DOI: 10.1103/PhysRevB.52.5210  1
1995 Singh T, Iyer S, Bodine F, Ravaioli U. World-wide-web in the electrical engineering curriculum at the University of Illinois Asee Annual Conference Proceedings. 1: 1077-1083.  1
1995 Iyer SV, Singh T, Terstriep J, Ravaioli U. World wide web based technology transfer testbed Biennial University/Government/Industry Microelectronics Symposium - Proceedings. 16-20.  1
1993 Patil MB, Hueschent MR, Ravaioli U. Monte Carlo Simulation of Real-Space Transfer Transistors: Device Physics and Scaling Effects Ieee Transactions On Electron Devices. 40: 480-486. DOI: 10.1109/16.199350  1
1993 Kerkhoven T, Raschke MW, Ravaioli U. Self-consistent simulation of quantum wires in periodic heterojunction structures Journal of Applied Physics. 74: 1199-1204. DOI: 10.1063/1.354921  1
1992 Chen D, Kan EC, Ravaioli U, Shu CW, Dutton RW. An Improved Energy Transport Model Including Nonparabolicity and Non-Maxwellian Distribution Effects Ieee Electron Device Letters. 13: 26-28. DOI: 10.1109/55.144940  1
1992 Galick AT, Kerkhoven T, Ravaioli U. Iterative Solution of the Eigenvalue Problem for a Dielectric Waveguide Ieee Transactions On Microwave Theory and Techniques. 40: 699-705. DOI: 10.1109/22.127519  1
1992 Patil MB, Ravaioli U. Monte Carlo analysis of real-space transfer in a three-terminal device Journal of Applied Physics. 72: 161-167. DOI: 10.1063/1.352152  1
1992 Ravaioli U, Kerkhoven T, Raschke M, Galick AT. Numerical simulation of electron confinement in contiguous quantum wires Superlattices and Microstructures. 11: 343-345. DOI: 10.1016/0749-6036(92)90395-L  1
1992 Macucci M, Ravaioli U, Kerkhoven T. Analysis of electron transfer between parallel quantum wires Superlattices and Microstructures. 12: 509-512. DOI: 10.1016/0749-6036(92)90310-2  1
1992 Kerkhoven T, Raschke M, Ravaioli U. Self-consistent simulation of corrugated layered structures Superlattices and Microstructures. 12: 505-508. DOI: 10.1016/0749-6036(92)90309-S  1
1992 Patil MB, Ravaioli U, Hess K, Hueschen M. Monte Carlo simulation of InGaAs/AlGaAs/GaAs real-space transfer transistors Semiconductor Science and Technology. 7.  1
1991 Kan EC, Ravaioli U, Chen D. Multidimensional Augmented Current Equation Including Velocity Overshoot Ieee Electron Device Letters. 12: 419-421. DOI: 10.1109/55.119151  1
1991 Chen D, Kan EC, Ravaioli U. An Analytical Formulation of the Length Coefficient for the Augmented Drift-Diffusion Model Including Velocity Overshoot Ieee Transactions On Electron Devices. 38: 1484-1490. DOI: 10.1109/16.81642  1
1991 Grinberg AA, Luryi S, Schryer NL, Smith RK, Lee C, Ravaioli U, Sangiorgi E. Adiabatic approach to the dynamics of nonequilibrium electron ensembles in semiconductors Physical Review B. 44: 10536-10545. DOI: 10.1103/PhysRevB.44.10536  1
1991 Register LF, Ravaioli U, Hess K. Numerical simulation of mesoscopic systems with open boundaries using the multidimensional time-dependent Schrödinger equation Journal of Applied Physics. 69: 7153-7158. DOI: 10.1063/1.347606  1
1991 Kan EC, Ravaioli U, Kerkhoven T. Calculation of velocity overshoot in submicron devices using an augmented drift-diffusion model Solid State Electronics. 34: 995-999. DOI: 10.1016/0038-1101(91)90218-N  1
1991 Patil MB, Ravaioli U. Transient simulation of semiconductor devices using the Monte-Carlo method Solid State Electronics. 34: 1029-1034. DOI: 10.1016/0038-1101(91)90097-I  1
1990 Kerkhoven T, Galick AT, Ravaioli U, Arends JH, Saad Y. Efficient numerical simulation of electron states in quantum wires Journal of Applied Physics. 68: 3461-3469. DOI: 10.1063/1.346357  1
1990 Patil MB, Ravaioli U. Analytical approximation for wavefunctions and computation of scattering rates in double heterojunction structures Superlattices and Microstructures. 8: 459-466. DOI: 10.1016/0749-6036(90)90351-7  1
1990 Patil MB, Ravaioli U. Calculation of electron density in planar-doped high electron mobility transistors Solid State Electronics. 33: 953-962. DOI: 10.1016/0038-1101(90)90078-S  1
1990 Song GH, Hess K, Kerkhoven T, Ravaioli U. Two‐dimensional simulation of quantum well lasers European Transactions On Telecommunications. 1: 375-381. DOI: 10.1002/ett.4460010403  1
1990 Lee C, Ravaioli U. Monte Carlo comparison of heterojunction cathode Gunn oscillators Electronics Letters. 26: 425-427.  1
1989 Sols F, MacUcci M, Ravaioli U, Hess K. Theory for a quantum modulated transistor Journal of Applied Physics. 66: 3892-3906. DOI: 10.1063/1.344032  1
1989 Sols F, Macucci M, Ravaioli U, Hess K. On the possibility of transistor action based on quantum interference phenomena Applied Physics Letters. 54: 350-352. DOI: 10.1063/1.100966  1
1989 Ravaioli U, Sols F, Kerkhoven T. A broad theoretical approach to the investigation of mesoscopic electron devices Solid State Electronics. 32: 1371-1375. DOI: 10.1016/0038-1101(89)90242-6  1
1988 Shapo B, Ball C, Kizilyalli I, Ravaioli U. Recent applications of Monte Carlo methods for semiconductor microdevice simulation Superlattices and Microstructures. 4: 39-43. DOI: 10.1016/0749-6036(88)90264-9  1
1987 Kluksdahl N, Pötz W, Ravaioli U, Ferry DK. Wigner function study of a double quantum barrier resonant tunnelling diode Superlattices and Microstructures. 3: 41-45. DOI: 10.1016/0749-6036(87)90175-3  1
1986 Ravaioli U, Ferry DK. Monte Carlo study of the quasi two-dimensional electron gas in the high electron mobility transistor Superlattices and Microstructures. 2: 75-78. DOI: 10.1016/0749-6036(86)90157-6  1
1986 Ravaioli U, Ferry DK. Electron transport in the conduction channel of the HEMT Superlattices and Microstructures. 2: 377-380. DOI: 10.1016/0749-6036(86)90051-0  1
1985 Ravaioli U, Osman MA, Ferry DK, Lugli P. Advantages of Collocation Methods Over Finite Differences in One-Dimensional Monte Carlo Simulations of Submicron Devices Ieee Transactions On Electron Devices. 32: 2097-2101. DOI: 10.1109/T-ED.1985.22245  1
1985 Ravaioli U, Osman MA, Pötz W, Kluksdahl N, Ferry DK. Investigation of ballistic transport through resonant-tunnelling quantum wells using wigner function approach Physica B+C. 134: 36-40. DOI: 10.1016/0378-4363(85)90317-1  1
1984 Cancellieri G, Ravaioli U. NON-SYMMETRIC BEHAVIOUR OF A JOINT BETWEEN MULTIMODE FIBERS Journal of Optical Communications. 5: 87-92.  1
1982 Cancellieri G, Ravaioli U. Baseband response of multimode optical fibers under different excitation conditions Journal of Optical Communications. 3: 13-18. DOI: 10.1515/JOC.1982.3.1.13  1
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