| Year |
Citation |
Score |
| 2019 |
Mohamed M, Raleva K, Ravaioli U, Vasileska D, Aksamija Z. Phonon Dissipation in Nanostructured Semiconductor Devices: Dispersing Heat Is Critical for Continued Integrated Circuit Progress Ieee Nanotechnology Magazine. 13: 6-17. DOI: 10.1109/Mnano.2019.2916114 |
0.723 |
|
| 2018 |
Ismail F, Sarker P, Mohamed M, Kim K, Ravaioli U. Moving mesh adaptation for Si and GaN-based power device simulation Journal of Computational Electronics. 17: 1621-1629. DOI: 10.1007/S10825-018-1218-5 |
0.414 |
|
| 2017 |
Park KH, Ravaioli U. Limited thermal transport in rippled graphene induced by bi-axial strain for thermoelectric applications Journal of Applied Physics. 122: 25115. DOI: 10.1063/1.4993911 |
0.307 |
|
| 2015 |
Park KH, Martin PN, Ravaioli U. Electronic and thermal transport study of sinusoidally corrugated nanowires aiming to improve thermoelectric efficiency. Nanotechnology. 27: 035401. PMID 26650977 DOI: 10.1088/0957-4484/27/3/035401 |
0.701 |
|
| 2015 |
Park KH, Martin PN, Ravaioli U. Enhancement of thermoelectric efficiency in non-uniform semiconductor nanowires Journal of Physics: Conference Series. 647. DOI: 10.1088/1742-6596/647/1/012053 |
0.635 |
|
| 2015 |
Mohamed M, Aksamija Z, Ravaioli U. Coupled electron and thermal transport simulation of self-heating effects in junctionless MOSFET Journal of Physics: Conference Series. 647. DOI: 10.1088/1742-6596/647/1/012026 |
0.659 |
|
| 2015 |
Park KH, Mohamed M, Aksamija Z, Ravaioli U. Phonon scattering due to van der Waals forces in the lattice thermal conductivity of Bi2Te3 thin films Journal of Applied Physics. 117. DOI: 10.1063/1.4905294 |
0.657 |
|
| 2014 |
Mohamed M, Aksamija Z, Vitale W, Hassan F, Park KH, Ravaioli U. A conjoined electron and thermal transport study of thermal degradation induced during normal operation of multigate transistors Ieee Transactions On Electron Devices. 61: 976-983. DOI: 10.1109/Ted.2014.2306422 |
0.714 |
|
| 2013 |
Chen Y, Mohamed M, Jo M, Ravaioli U, Xu R. Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications Journal of Computational Electronics. 12: 757-764. DOI: 10.1007/S10825-013-0478-3 |
0.431 |
|
| 2012 |
Estrada ZJ, Dellabetta B, Ravaioli U, Gilbert MJ. Phonon limited transport in graphene pseudospintronic devices Device Research Conference - Conference Digest, Drc. 87-88. DOI: 10.1109/Led.2012.2207701 |
0.327 |
|
| 2011 |
Giusi G, Iannaccone G, Crupi F, Ravaioli U. A backscattering model incorporating the effective carrier temperature in Nano-MOSFET Ieee Electron Device Letters. 32: 853-855. DOI: 10.1109/Led.2011.2145352 |
0.444 |
|
| 2010 |
Toghraee R, Lee KI, Papke D, Chiu SW, Jakobsson E, Ravaioli U. SIMULATION OF ION CONDUCTION IN α-HEMOLYSIN NANOPORES WITH COVALENTLY ATTACHED β-CYCLODEXTRIN BASED ON BOLTZMANN TRANSPORT MONTE CARLO MODEL. Journal of Computational and Theoretical Nanoscience. 7: 2555-2567. PMID 20938493 DOI: 10.1166/Jctn.2010.1642 |
0.806 |
|
| 2010 |
Martin PN, Aksamija Z, Pop E, Ravaioli U. Reduced thermal conductivity in nanoengineered rough Ge and GaAs nanowires. Nano Letters. 10: 1120-4. PMID 20222669 DOI: 10.1021/Nl902720V |
0.768 |
|
| 2010 |
Lee KI, Toghraee R, Jakobsson E, Ravaioli U. A study of Brownian dynamics simulation for ion transport through a transmembrane pore with a molecular adapter Journal of Computational and Theoretical Nanoscience. 7: 2547-2554. DOI: 10.1166/Jctn.2010.1641 |
0.78 |
|
| 2010 |
Ravaioli U. A special issue on nanoscale simulation of molecular and biological systems Journal of Computational and Theoretical Nanoscience. 7: 2479-2480. DOI: 10.1166/Jctn.2010.1635 |
0.302 |
|
| 2010 |
Ravaioli U. Advanced methods for silicon device modeling 2010 10th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems, Sirf 2010 - Digest of Papers. 168-171. DOI: 10.1109/SMIC.2010.5422994 |
0.384 |
|
| 2010 |
Toghraee R, Lee KI, Ravaioli U. Simulation of Ion permeation in biological membranes Computing in Science and Engineering. 12: 43-47. DOI: 10.1109/Mcse.2010.46 |
0.794 |
|
| 2010 |
Vitale W, Mohamed M, Ravaioli U. Monte Carlo study of transport properties in junctionless transistors 2010 14th International Workshop On Computational Electronics, Iwce 2010. 243-245. DOI: 10.1109/IWCE.2010.5677969 |
0.34 |
|
| 2010 |
Aksamija Z, Ravaioli U. Anharmonic decay of g-process longitudinal optical phonons in silicon Applied Physics Letters. 96. DOI: 10.1063/1.3350894 |
0.637 |
|
| 2010 |
Ni C, Aksamija Z, Murthy JY, Ravaioli U. Coupled electro-thermal simulation of MOSFETs Proceedings of the Asme Interpack Conference 2009, Ipack2009. 1: 161-173. DOI: 10.1007/S10825-012-0387-X |
0.683 |
|
| 2009 |
Toghraee R, Mashl RJ, Lee KI, Jakobsson E, Ravaioli U. Simulation of charge transport in ion channels and nanopores with anisotropic permittivity. Journal of Computational Electronics. 8: 98-109. PMID 20445807 DOI: 10.1007/S10825-009-0272-4 |
0.808 |
|
| 2009 |
Wang HL, Toghraee R, Papke D, Cheng XL, McCammon JA, Ravaioli U, Sine SM. Single-channel current through nicotinic receptor produced by closure of binding site C-loop. Biophysical Journal. 96: 3582-90. PMID 19413963 DOI: 10.1016/J.Bpj.2009.02.020 |
0.806 |
|
| 2009 |
Martin P, Aksamija Z, Pop E, Ravaioli U. Impact of phonon-surface roughness scattering on thermal conductivity of thin si nanowires. Physical Review Letters. 102: 125503. PMID 19392295 DOI: 10.1103/Physrevlett.102.125503 |
0.766 |
|
| 2009 |
Mohamed M, Aksamija Z, Godoy A, Martin P, Hahm HS, Lee W, Lee KII, Ravaioli U. Size effects and performance assessment in nanoscale multigate MOSFET structures Journal of Computational and Theoretical Nanoscience. 6: 1927-1936. DOI: 10.1166/Jctn.2009.1248 |
0.792 |
|
| 2009 |
Aksamija Z, Mohamed MY, Ravaioli U. Parallel implementation of Boltzmann Transport Simulation of carbon nanotubes Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091137 |
0.641 |
|
| 2009 |
Aksamija Z, Ravaioli U. Anharmonic decay of non-equilibrium intervalley phonons in silicon Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012033 |
0.614 |
|
| 2009 |
Martin PN, Aksamija Z, Pop E, Ravaioli U. Prediction of reduced thermal conductivity in nano-engineered rough semiconductor nanowires Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012010 |
0.742 |
|
| 2009 |
Martin PN, Ravaioli U. Green function treatment of electronic transport in narrow rough semiconductor conduction channels Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012009 |
0.72 |
|
| 2009 |
Giusi G, Iannaccone G, Ravaioli U. Time-dependent analysis of low VDD program operation in double-gate SONOS memories by full-band Monte Carlo simulation Journal of Applied Physics. 106. DOI: 10.1063/1.3259409 |
0.431 |
|
| 2009 |
Aksamija Z, Ravaioli U. Energy conservation in collision broadening over a sequence of scattering events in semiclassical Monte Carlo simulation Journal of Applied Physics. 105. DOI: 10.1063/1.3116544 |
0.67 |
|
| 2008 |
Aksamija Z, Ravaioli U. Efficient numerical solution of the 3-D semiconductor poisson equation for Monte Carlo device simulation Cmes - Computer Modeling in Engineering and Sciences. 37: 45-63. DOI: 10.3970/Cmes.2008.037.045 |
0.658 |
|
| 2008 |
Giusi G, Iannaccone G, Mohamed M, Ravaioli U. Study of warm-electron injection in double-gate SONOS by full-band Monte Carlo simulation Ieee Electron Device Letters. 29: 1242-1244. DOI: 10.1109/Led.2008.2004784 |
0.474 |
|
| 2008 |
Aksamija Z, Ravaioli U. Boltzman transport simulation of single-walled carbon nanotubes Journal of Computational Electronics. 7: 315-318. DOI: 10.1007/S10825-008-0221-7 |
0.667 |
|
| 2008 |
Mohamed M, Godoy A, Ravaioli U. 3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET Journal of Computational Electronics. 7: 217-221. DOI: 10.1007/S10825-008-0187-5 |
0.408 |
|
| 2008 |
Mohamed M, Martin P, Ravaioli U. 3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 39-42. DOI: 10.1002/Pssc.200776569 |
0.739 |
|
| 2008 |
Aksamija Z, Hahm HS, Ravaioli U. Emission and absorption of phonons in silicon Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 90-93. DOI: 10.1002/Pssc.200776563 |
0.641 |
|
| 2007 |
Aksamija Z, Ravaioli U. Phonon heat dissipation in silicon 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422404 |
0.572 |
|
| 2007 |
Aksamija Z, Ravaioli U. Joule heating and phonon transport in nanoscale silicon MOSFETs 2007 Ieee International Conference On Electro/Information Technology, Eit 2007. 70-72. DOI: 10.1109/EIT.2007.4374433 |
0.664 |
|
| 2007 |
Li Y, Ravaioli U. Chapter 6 Semi-empirical simulations of carbon nanotube properties under electronic perturbations Theoretical and Computational Chemistry. 17: 163-186. DOI: 10.1016/S1380-7323(07)80024-0 |
0.304 |
|
| 2007 |
Ravaioli U. Simulation of Nanoscale Electronic Systems Advances in Computers. 71: 167-249. DOI: 10.1016/S0065-2458(06)71004-X |
0.419 |
|
| 2007 |
Godoy A, Ruiz F, Sampedro C, Gámiz F, Ravaioli U. Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs Solid-State Electronics. 51: 1211-1215. DOI: 10.1016/J.Sse.2007.07.025 |
0.374 |
|
| 2007 |
Aksamija Z, Ravaioli U. Energy conservation in collisional broadening 2007 International Conference On Simulation of Semiconductor Processes and Devices, Sispad 2007. 73-76. |
0.546 |
|
| 2006 |
Sotomayor M, Van Der Straaten TA, Ravaioli U, Schulten K. Electrostatic properties of the mechanosensitive channel of small conductance MscS Biophysical Journal. 90: 3496-3510. PMID 16513774 DOI: 10.1529/Biophysj.105.080069 |
0.464 |
|
| 2006 |
Bi X, East JR, Ravaioli U, Haddad GI. Analysis and design of Si terahertz transit-time diodes Solid-State Electronics. 50: 889-896. DOI: 10.1016/J.Sse.2006.04.007 |
0.399 |
|
| 2006 |
Kwon HI, Ravaioli U. Simulation of electronic/ionic mixed conduction in solid ionic memory devices Microelectronics Journal. 37: 1047-1051. DOI: 10.1016/J.Mejo.2006.04.009 |
0.381 |
|
| 2006 |
Guo B, Ravaioli U, Staedele M. Full band Monte Carlo calculations of velocity-field characteristics of wurtzite ZnO Computer Physics Communications. 175: 482-486. DOI: 10.1016/J.Cpc.2006.06.008 |
0.347 |
|
| 2006 |
Aksamija Z, Ravaioli U. Joule heating and phonon transport in silicon MOSFETs Journal of Computational Electronics. 5: 431-434. DOI: 10.1007/S10825-006-0045-2 |
0.688 |
|
| 2006 |
Aksamija Z, Ravaioli U. Meshless solution of the 3-D semiconductor Poisson equation Journal of Computational Electronics. 5: 459-462. DOI: 10.1007/S10825-006-0040-7 |
0.638 |
|
| 2006 |
Eschermann JF, Li Y, Van der Straaten TA, Ravaioli U. Self-consistent ion transport simulation in carbon nanotube channels Journal of Computational Electronics. 5: 455-457. DOI: 10.1007/S10825-006-0039-0 |
0.446 |
|
| 2005 |
Lu D, Li Y, Ravaioli U, Schulten K. Ion-nanotube terahertz oscillator. Physical Review Letters. 95: 246801. PMID 16384404 DOI: 10.1103/Physrevlett.95.246801 |
0.306 |
|
| 2005 |
Van Der Straaten TA, Kathawala G, Trellakis A, Eisenberg RS, Ravaioli U. BioMOCA - A Boltzmann transport Monte Carlo model for ion channel simulation Molecular Simulation. 31: 151-171. DOI: 10.1080/08927020412331308700 |
0.806 |
|
| 2005 |
Godoy A, Yang Z, Ravaioli U, Gámiz F. Effects of nonparabolic bands in quantum wires Journal of Applied Physics. 98. DOI: 10.1063/1.1940143 |
0.563 |
|
| 2005 |
Lee KI, Park YJ, van der Straaten T, Kathawala G, Ravaioli U. Simulation of ion conduction in the ompF porin channel using BioMOCA Journal of Computational Electronics. 4: 157-160. DOI: 10.1007/s10825-005-7129-2 |
0.809 |
|
| 2005 |
Ravishankar R, Kathawala G, Ravaioli U, Hasan S, Lundstrom M. Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs Journal of Computational Electronics. 4: 39-43. DOI: 10.1007/s10825-005-7104-y |
0.37 |
|
| 2005 |
Kathawala GA, Van Der Straaten T, Ravaioli U. Application of grid focusing methodology to transport Monte Carlo model for ion channel simulations 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 544-547. |
0.804 |
|
| 2004 |
Fan XF, Wang X, Winstead B, Register LF, Ravaioli U, Banerjee SK. MC simulation of strained-Si MOSFET with full-band structure and quantum correction Ieee Transactions On Electron Devices. 51: 962-970. DOI: 10.1109/Ted.2004.828296 |
0.487 |
|
| 2004 |
Guan D, Ravaioli U, Peralta XG, Allen SJ, Wanke M. Green's function simulation of terahertz photoconductivity in double quantum well field effect transistors Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/146 |
0.408 |
|
| 2004 |
Trellakis A, Ravaioli U. Directional effects on bound quantum states for trench oxide quantum wires on (1 0 0)-silicon Solid-State Electronics. 48: 367-371. DOI: 10.1016/J.Sse.2003.08.006 |
0.787 |
|
| 2004 |
Guo B, Ravaioli U, Song D. Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach Microelectronics Journal. 35: 117-123. DOI: 10.1016/J.Mejo.2003.10.007 |
0.33 |
|
| 2004 |
Yang Z, Van Der Straaten TA, Ravaioli U. A coupled 3-D PNP/ECP model for ion transport in biological ion channels 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 135-136. DOI: 10.1007/s10825-005-7131-8 |
0.537 |
|
| 2004 |
Van Der Straaten TA, Kathawala G, Ravaioli U. BioMOCA: A transport Monte Carlo approach to ion channel simulation 2004 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2004. 1: 139-142. |
0.378 |
|
| 2003 |
Kathawala GA, Winstead B, Ravaioli U. Monte Carlo Simulations of Double-Gate MOSFETs Ieee Transactions On Electron Devices. 50: 2467-2473. DOI: 10.1109/Ted.2003.819699 |
0.816 |
|
| 2003 |
Winstead B, Ravaioli U. A quantum correction based on Schrödinger equation applied to Monte Carlo device simulation Ieee Transactions On Electron Devices. 50: 440-446. DOI: 10.1109/Ted.2003.809431 |
0.49 |
|
| 2003 |
Guan D, Ravaioli U, Giannetta RW, Hannan M, Adesida I, Melloch MR. Nonequilibrium Green's function method for a quantum Hall device in a magnetic field Physical Review B - Condensed Matter and Materials Physics. 67: 2053281-2053289. DOI: 10.1103/Physrevb.67.205328 |
0.386 |
|
| 2003 |
Guan D, Godoy A, Ravaioli U, Gamiz F. Comparison Between Non-Equilibrium Green's Function and Monte Carlo Simulations for Transport in a Silicon Quantum Wire Structure Journal of Computational Electronics. 2: 335-339. DOI: 10.1023/B:Jcel.0000011448.05449.A1 |
0.46 |
|
| 2003 |
Straaten Tvd, Kathawala G, Ravaioli U. BioMOCA: A Transport Monte Carlo Model for Ion Channels Journal of Computational Electronics. 2: 231-237. DOI: 10.1023/B:Jcel.0000011430.99984.Cd |
0.458 |
|
| 2003 |
Bonci L, Macucci M, Guan D, Ravaioli U. Numerical Analysis of Tunneling Between Stacked Quantum Wires with the Inclusion of the Effects from Effective Mass Discontinuities Journal of Computational Electronics. 2: 127-130. DOI: 10.1023/B:Jcel.0000011412.66674.10 |
0.399 |
|
| 2003 |
Kathawala GA, Mohamed M, Ravaioli U. Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation Journal of Computational Electronics. 2: 85-89. DOI: 10.1023/B:Jcel.0000011404.60973.8A |
0.819 |
|
| 2003 |
van der Straaten T, Tang J, Ravaioli U, Eisenberg R, Aluru N. Journal of Computational Electronics. 2: 29-47. DOI: 10.1023/A:1026212825047 |
0.417 |
|
| 2003 |
Kathawala GA, Ravaioli U. 3-D Monte Carlo Simulations of FinFETs Technical Digest - International Electron Devices Meeting. 683-686. |
0.802 |
|
| 2002 |
Trellakis A, Ravaioli U. Three-dimensional spectral solution of the Schrödinger equation for arbitrary band structures Journal of Applied Physics. 92: 3711-3716. DOI: 10.1063/1.1502181 |
0.771 |
|
| 2002 |
van der Straaten T, Tang J, Eisenberg R, Ravaioli U, Aluru N. Journal of Computational Electronics. 1: 335-340. DOI: 10.1023/A:1020787222235 |
0.407 |
|
| 2002 |
Winstead B, Tsuchiya H, Ravaioli U. Journal of Computational Electronics. 1: 201-207. DOI: 10.1023/A:1020773407697 |
0.756 |
|
| 2002 |
Guo B, Ravaioli U. Journal of Computational Electronics. 1: 309-311. DOI: 10.1023/A:1020762501762 |
0.412 |
|
| 2002 |
Kepkep A, Ravaioli U. Journal of Computational Electronics. 1: 171-174. DOI: 10.1023/A:1020756904062 |
0.391 |
|
| 2002 |
Tsuchiya H, Ravaioli U. Journal of Computational Electronics. 1: 295-299. DOI: 10.1023/A:1020710515874 |
0.418 |
|
| 2002 |
Jakumeit J, Ravaioli U. Influence of electron-electron scattering on the hot electron distribution in ultra-short Si-MOSFETs Physica B: Condensed Matter. 314: 363-366. DOI: 10.1016/S0921-4526(01)01426-0 |
0.366 |
|
| 2002 |
Guan D, Ravaioli U. 3-D simulation of directional transport in coupled nanoscale MOS channels Physica B: Condensed Matter. 314: 372-376. DOI: 10.1016/S0921-4526(01)01416-8 |
0.422 |
|
| 2001 |
Trellakis A, Ravaioli U. Three-dimensional spectral solution of Schrödinger equation Vlsi Design. 13: 341-347. DOI: 10.1155/2001/76808 |
0.765 |
|
| 2001 |
Tsuchiya H, Winstead B, Ravaioli U. Quantum potential approaches for nano-scale device simulation Vlsi Design. 13: 335-340. DOI: 10.1155/2001/73145 |
0.751 |
|
| 2001 |
Kepkep A, Ravaioli U, Winstead B. Cluster-based parallel 3-D Monte Carlo device simulation Vlsi Design. 13: 51-56. DOI: 10.1155/2001/70635 |
0.721 |
|
| 2001 |
Mietzner T, Jakumeit J, Ravaioli U. Influence of electron - Electron interaction on electron distributions in short Si-MOSFETs analysed using the local iterative Monte Carlo technique Vlsi Design. 13: 175-178. DOI: 10.1155/2001/68217 |
0.37 |
|
| 2001 |
Jakumeit J, Mietzner T, Ravaioli U. Efficient silicon device simulation with the Local Iterative Monte Carlo method Vlsi Design. 13: 57-61. DOI: 10.1155/2001/27920 |
0.436 |
|
| 2001 |
Hess K, Ravaioli U, Gupta M, Aluru N, Straaten TVD, Eisenberg RS. Simulation of Biological Ionic Channels by Technology Computer-Aided Design Vlsi Design. 13: 179-187. DOI: 10.1155/2001/25603 |
0.486 |
|
| 2001 |
Aktas O, Aluru NR, Ravaioli U. Application of a parallel DSMC technique to predict flow characteristics in microfluidic filters Journal of Microelectromechanical Systems. 10: 538-549. DOI: 10.1109/84.967377 |
0.574 |
|
| 2001 |
Mietzner T, Jakumeit J, Ravaioli U. Local iterative Monte Carlo analysis of electron-electron interaction in short-channel Si-MOSFETs Ieee Transactions On Electron Devices. 48: 2323-2330. DOI: 10.1109/16.954472 |
0.411 |
|
| 2001 |
Jakumeit J, Ravaioli U. Semiconductor transport simulation with the local iterative Monte Carlo technique Ieee Transactions On Electron Devices. 48: 946-955. DOI: 10.1109/16.918243 |
0.38 |
|
| 2001 |
Tsuchiya H, Ravaioli U. Particle Monte Carlo simulation of quantum phenomena in semiconductor nanostructures Journal of Applied Physics. 89: 4023-4029. DOI: 10.1063/1.1354653 |
0.443 |
|
| 2001 |
Winstead B, Ravaioli U. A coupled schrödinger/Monte Carlo technique for quantum-corrected device simulation Annual Device Research Conference Digest. 169-170. |
0.339 |
|
| 2001 |
Winstead B, Tsuchiya H, Ravaioli U. An approach to quantum correction in Monte Carlo device simulation 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 566-569. |
0.364 |
|
| 2001 |
Hess K, Ravaioli U, Gupta M, Aluru N, Van Der Straaten T, Eisenberg RS. Simulation of biological ionic channels by Technology Computer-Aided Design Vlsi Design. 13: 179-187. |
0.385 |
|
| 2000 |
Wordelman CJ, Aluru NR, Ravaioli U. A meshless method for the numerical solution of the 2- and 3-D semiconductor Poisson equation Cmes - Computer Modeling in Engineering and Sciences. 1: 121-126. DOI: 10.3970/Cmes.2000.001.121 |
0.358 |
|
| 2000 |
Winstead B, Ravaioli U. Simulation of Schottky barrier MOSFET's with a coupled quantum injection/Monte Carlo technique Ieee Transactions On Electron Devices. 47: 1241-1246. DOI: 10.1109/16.842968 |
0.485 |
|
| 2000 |
Wordelman CJ, Ravaioli U. Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices Ieee Transactions On Electron Devices. 47: 410-416. DOI: 10.1109/16.822288 |
0.343 |
|
| 2000 |
Trellakis A, Ravaioli U. Computational issues in the simulation of semiconductor quantum wires Computer Methods in Applied Mechanics and Engineering. 181: 437-449. DOI: 10.1016/S0045-7825(99)00183-8 |
0.806 |
|
| 2000 |
Ravaioli U, Winstead B, Wordelman C, Kepkep A. Monte Carlo simulation for ultra-small MOS devices Superlattices and Microstructures. 27: 137-145. DOI: 10.1006/Spmi.1999.0802 |
0.764 |
|
| 1999 |
Trellakis A, Ravaioli U. Lateral scalability limits of silicon conduction channels Journal of Applied Physics. 86: 3911-3916. DOI: 10.1063/1.371307 |
0.798 |
|
| 1999 |
Hess K, Register LF, McMahon W, Tuttle B, Aktas O, Ravaioli U, Lyding JW, Kizilyalli IC. Theory of channel hot-carrier degradation in MOSFETs Physica B: Condensed Matter. 272: 527-531. DOI: 10.1016/S0921-4526(99)00363-4 |
0.596 |
|
| 1999 |
Wordelman CJ, Ravaioli U. 3-D granular Monte Carlo simulation of silicon n-MOSFETs Physica B: Condensed Matter. 272: 568-571. DOI: 10.1016/S0921-4526(99)00340-3 |
0.47 |
|
| 1999 |
Ravaioli U, Balasubramanian M, Aktas O. Link between hot electrons and interface damage in n-MOSFETs: A Monte Carlo analysis Physica B: Condensed Matter. 272: 542-545. DOI: 10.1016/S0921-4526(99)00336-1 |
0.611 |
|
| 1998 |
Yamakawa S, Ueno H, Taniguchi K, Hamaguchi C, Miyatsuji K, Masaki K, Ravaioli U. Electron mobility and Monte Carlo device simulation of MOSFETs Vlsi Design. 6: 27-30. DOI: 10.1155/1998/92737 |
0.389 |
|
| 1998 |
Macucci M, Galick AT, Ravaioli U. Tunneling between multimode stacked quantum wires Vlsi Design. 8: 247-252. DOI: 10.1155/1998/91352 |
0.36 |
|
| 1998 |
Jakumeit J, Ravaioli U, Hess K. New approach to hot electron effects in Si-MOSFETs based on an evolutionary algorithm using a Monte Carlo like mutation operator Vlsi Design. 6: 307-311. DOI: 10.1155/1998/81023 |
0.329 |
|
| 1998 |
Jakumeit J, Duncan A, Ravaioli U, Hess K. Simulation of Si-MOSFETs with the mutation operator Monte Carlo method Vlsi Design. 8: 343-347. DOI: 10.1155/1998/80689 |
0.384 |
|
| 1998 |
Trellakis A, Galick AT, Pacelli A, Ravaioli U. Comparison of iteration schemes for the solution of the multidimensional Schrödinger-Poisson equations Vlsi Design. 8: 105-109. DOI: 10.1155/1998/42712 |
0.77 |
|
| 1998 |
Patil MB, Ravaioli U, Kerkhoven T. Numerical evaluation of iterative schemes for drift-diffusion simulation Vlsi Design. 8: 337-341. DOI: 10.1155/1998/34303 |
0.314 |
|
| 1998 |
Ravaioli U, Duncan A, Pacelli A, Wordelman C, Hess K. Hierarchy of full band structure models for Monte Carlo simulation Vlsi Design. 6: 147-153. DOI: 10.1155/1998/16901 |
0.35 |
|
| 1998 |
Duncan A, Ravaioli U, Jakumeit J. Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors Ieee Transactions On Electron Devices. 45: 867-876. DOI: 10.1109/16.662792 |
0.456 |
|
| 1998 |
Ravaioli U. Hierarchy of simulation approaches for hot carrier transport in deep submicron devices Semiconductor Science and Technology. 13: 1-10. DOI: 10.1088/0268-1242/13/1/002 |
0.411 |
|
| 1998 |
Iannaccone G, Trellakis A, Ravaioli U. Simulation of a quantum-dot flash memory Journal of Applied Physics. 84: 5032-5036. DOI: 10.1063/1.368750 |
0.787 |
|
| 1997 |
Trellakis A, Galick AT, Pacelli A, Ravaioli U. Iteration schema for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures Journal of Applied Physics. 81: 7880-7884. DOI: 10.1063/1.365396 |
0.773 |
|
| 1997 |
Trellakis A, Galick A, Ravaioli U. Rational Chebyshev approximation for the Fermi-Dirac integral Solid-State Electronics. 41: 771-773. DOI: 10.1016/S0038-1101(96)00261-4 |
0.342 |
|
| 1997 |
Pacelli A, Ravaioli U. Analysis of variance-reduction schemes for ensemble monte carlo simulation of semiconductor devices Solid-State Electronics. 41: 599-605. DOI: 10.1016/S0038-1101(96)00198-0 |
0.368 |
|
| 1997 |
Jakumeit J, Duncan A, Ravaioli U, Hess K. Calculation of the high energy tail of the electron distribution in Si-MOSFETs with an evolutionary algorithm Physica Status Solidi (B) Basic Research. 204: 517-520. DOI: 10.1002/1521-3951(199711)204:1<517::Aid-Pssb517>3.0.Co;2-R |
0.324 |
|
| 1997 |
Trellakis A, Galick AJ, Ravaioli U. Rational Chebyshev approximation for the Fermi-Dirac integral ℱ-3/2(x) Solid-State Electronics. 41: 771-773. |
0.746 |
|
| 1996 |
Jakumeit J, Ravaioli U, Hess K. Calculation of hot electron distributions in silicon by means of an evolutionary algorithm Journal of Applied Physics. 80: 5061-5066. DOI: 10.1063/1.363551 |
0.34 |
|
| 1996 |
Yamakawa S, Ueno H, Taniguchi K, Hamaguchi C, Miyatsuji K, Masaki K, Ravaioli U. Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method Journal of Applied Physics. 79: 911-916. DOI: 10.1063/1.360871 |
0.338 |
|
| 1996 |
Ravaioli U, Lee CH, Patil MB. Monte Carlo simulation of microwave devices Mathematical and Computer Modelling. 23: 167-179. DOI: 10.1016/0895-7177(96)00048-9 |
0.466 |
|
| 1995 |
Kan EC, Yu Z, Dutton RW, Chen D, Ravaioli U. Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices Vlsi Design. 3: 211-224. DOI: 10.1155/1995/12686 |
0.383 |
|
| 1995 |
Lee CH, Ravaioli U, Hess K, Mead CA, Hasler P. Simulation of a Long Term Memory Device with a Full Bandstructure Monte Carlo Approach Ieee Electron Device Letters. 16: 360-362. DOI: 10.1109/55.400738 |
0.455 |
|
| 1995 |
Macucci M, Galick A, Ravaioli U. Quasi-three-dimensional Green's-function simulation of coupled electron waveguides Physical Review B. 52: 5210-5220. DOI: 10.1103/Physrevb.52.5210 |
0.44 |
|
| 1993 |
Patil MB, Hueschent MR, Ravaioli U. Monte Carlo Simulation of Real-Space Transfer Transistors: Device Physics and Scaling Effects Ieee Transactions On Electron Devices. 40: 480-486. DOI: 10.1109/16.199350 |
0.382 |
|
| 1993 |
Kerkhoven T, Raschke MW, Ravaioli U. Self-consistent simulation of quantum wires in periodic heterojunction structures Journal of Applied Physics. 74: 1199-1204. DOI: 10.1063/1.354921 |
0.391 |
|
| 1992 |
Chen D, Kan EC, Ravaioli U, Shu CW, Dutton RW. An Improved Energy Transport Model Including Nonparabolicity and Non-Maxwellian Distribution Effects Ieee Electron Device Letters. 13: 26-28. DOI: 10.1109/55.144940 |
0.387 |
|
| 1992 |
Galick AT, Kerkhoven T, Ravaioli U. Iterative Solution of the Eigenvalue Problem for a Dielectric Waveguide Ieee Transactions On Microwave Theory and Techniques. 40: 699-705. DOI: 10.1109/22.127519 |
0.31 |
|
| 1992 |
Patil MB, Ravaioli U, Hess K, Hueschen M. Monte Carlo simulation of InGaAs/AlGaAs/GaAs real-space transfer transistors Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/139 |
0.379 |
|
| 1992 |
Patil MB, Ravaioli U. Monte Carlo analysis of real-space transfer in a three-terminal device Journal of Applied Physics. 72: 161-167. DOI: 10.1063/1.352152 |
0.426 |
|
| 1992 |
Register LF, Ravaioli U, Hess K. Erratum: ‘‘Numerical simulation of mesoscopic systems with open boundaries using the multidimensional time‐dependent Schrödinger equation’’ [J. Appl. Phys. 69, 7153 (1991)] Journal of Applied Physics. 71: 1555-1555. DOI: 10.1063/1.351232 |
0.309 |
|
| 1992 |
Ravaioli U, Kerkhoven T, Raschke M, Galick AT. Numerical simulation of electron confinement in contiguous quantum wires Superlattices and Microstructures. 11: 343-345. DOI: 10.1016/0749-6036(92)90395-L |
0.423 |
|
| 1992 |
Macucci M, Ravaioli U, Kerkhoven T. Analysis of electron transfer between parallel quantum wires Superlattices and Microstructures. 12: 509-512. DOI: 10.1016/0749-6036(92)90310-2 |
0.424 |
|
| 1992 |
Kerkhoven T, Raschke M, Ravaioli U. Self-consistent simulation of corrugated layered structures Superlattices and Microstructures. 12: 505-508. DOI: 10.1016/0749-6036(92)90309-S |
0.339 |
|
| 1991 |
Grinberg AA, Luryi S, Schryer NL, Smith RK, Lee C, Ravaioli U, Sangiorgi E. Adiabatic approach to the dynamics of nonequilibrium electron ensembles in semiconductors. Physical Review. B, Condensed Matter. 44: 10536-10545. PMID 9999078 DOI: 10.1103/Physrevb.44.10536 |
0.367 |
|
| 1991 |
Kan EC, Ravaioli U, Chen D. Multidimensional Augmented Current Equation Including Velocity Overshoot Ieee Electron Device Letters. 12: 419-421. DOI: 10.1109/55.119151 |
0.31 |
|
| 1991 |
Chen D, Kan EC, Ravaioli U. An Analytical Formulation of the Length Coefficient for the Augmented Drift-Diffusion Model Including Velocity Overshoot Ieee Transactions On Electron Devices. 38: 1484-1490. DOI: 10.1109/16.81642 |
0.364 |
|
| 1991 |
Register LF, Ravaioli U, Hess K. Numerical simulation of mesoscopic systems with open boundaries using the multidimensional time-dependent Schrödinger equation Journal of Applied Physics. 69: 7153-7158. DOI: 10.1063/1.347606 |
0.404 |
|
| 1991 |
Kan EC, Ravaioli U, Kerkhoven T. Calculation of velocity overshoot in submicron devices using an augmented drift-diffusion model Solid State Electronics. 34: 995-999. DOI: 10.1016/0038-1101(91)90218-N |
0.343 |
|
| 1991 |
Patil MB, Ravaioli U. Transient simulation of semiconductor devices using the Monte-Carlo method Solid State Electronics. 34: 1029-1034. DOI: 10.1016/0038-1101(91)90097-I |
0.363 |
|
| 1990 |
Kerkhoven T, Galick AT, Ravaioli U, Arends JH, Saad Y. Efficient numerical simulation of electron states in quantum wires Journal of Applied Physics. 68: 3461-3469. DOI: 10.1063/1.346357 |
0.424 |
|
| 1990 |
Lee C, Ravaioli U. Monte Carlo comparison of heterojunction cathode Gunn oscillators Electronics Letters. 26: 425-427. DOI: 10.1049/El:19900277 |
0.355 |
|
| 1990 |
Patil MB, Ravaioli U. Analytical approximation for wavefunctions and computation of scattering rates in double heterojunction structures Superlattices and Microstructures. 8: 459-466. DOI: 10.1016/0749-6036(90)90351-7 |
0.309 |
|
| 1990 |
Patil MB, Ravaioli U. Calculation of electron density in planar-doped high electron mobility transistors Solid State Electronics. 33: 953-962. DOI: 10.1016/0038-1101(90)90078-S |
0.411 |
|
| 1990 |
Song GH, Hess K, Kerkhoven T, Ravaioli U. Two‐dimensional simulation of quantum well lasers European Transactions On Telecommunications. 1: 375-381. DOI: 10.1002/Ett.4460010403 |
0.379 |
|
| 1989 |
Sols F, MacUcci M, Ravaioli U, Hess K. Theory for a quantum modulated transistor Journal of Applied Physics. 66: 3892-3906. DOI: 10.1063/1.344032 |
0.405 |
|
| 1989 |
Sols F, Macucci M, Ravaioli U, Hess K. On the possibility of transistor action based on quantum interference phenomena Applied Physics Letters. 54: 350-352. DOI: 10.1063/1.100966 |
0.375 |
|
| 1989 |
Ravaioli U, Sols F, Kerkhoven T. A broad theoretical approach to the investigation of mesoscopic electron devices Solid State Electronics. 32: 1371-1375. DOI: 10.1016/0038-1101(89)90242-6 |
0.42 |
|
| 1988 |
Shapo B, Ball C, Kizilyalli I, Ravaioli U. Recent applications of Monte Carlo methods for semiconductor microdevice simulation Superlattices and Microstructures. 4: 39-43. DOI: 10.1016/0749-6036(88)90264-9 |
0.422 |
|
| 1987 |
Kluksdahl N, Pötz W, Ravaioli U, Ferry DK. Wigner function study of a double quantum barrier resonant tunnelling diode Superlattices and Microstructures. 3: 41-45. DOI: 10.1016/0749-6036(87)90175-3 |
0.545 |
|
| 1986 |
Ravaioli U, Ferry D. MODFET Ensemble Monte Carlo model including the quasi-two-dimensional electron gas Ieee Transactions On Electron Devices. 33: 677-681. DOI: 10.1109/T-Ed.1986.22551 |
0.427 |
|
| 1986 |
Ravaioli U, Ferry DK. Monte Carlo study of the quasi two-dimensional electron gas in the high electron mobility transistor Superlattices and Microstructures. 2: 75-78. DOI: 10.1016/0749-6036(86)90157-6 |
0.56 |
|
| 1986 |
Ravaioli U, Ferry DK. Electron transport in the conduction channel of the HEMT Superlattices and Microstructures. 2: 377-380. DOI: 10.1016/0749-6036(86)90051-0 |
0.609 |
|
| 1985 |
Ravaioli U, Osman MA, Ferry DK, Lugli P. Advantages of Collocation Methods Over Finite Differences in One-Dimensional Monte Carlo Simulations of Submicron Devices Ieee Transactions On Electron Devices. 32: 2097-2101. DOI: 10.1109/Tcad.1985.1270155 |
0.591 |
|
| 1985 |
Ravaioli U, Osman MA, Pötz W, Kluksdahl N, Ferry DK. Investigation of ballistic transport through resonant-tunnelling quantum wells using wigner function approach Physica B+C. 134: 36-40. DOI: 10.1016/0378-4363(85)90317-1 |
0.559 |
|
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