Joan M. Redwing - Publications

Affiliations: 
Chemical Engineering Pennsylvania State University, State College, PA, United States 
Area:
Chemical Engineering, Nanotechnology

293 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Kim M, Giteau M, Ahsan N, Miyashita N, Thirumalaisamy L, Chen C, Redwing JM, Okada Y. Co-deposition of MoSfilms by reactive sputtering and formation of tree-like structures. Nanotechnology. PMID 35584615 DOI: 10.1088/1361-6528/ac70e3  0.344
2021 Bansal A, Hilse M, Huet B, Wang K, Kozhakhmetov A, Kim JH, Bachu S, Alem N, Collazo R, Robinson JA, Engel-Herbert R, Redwing JM. Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. Acs Applied Materials & Interfaces. PMID 34748305 DOI: 10.1021/acsami.1c14591  0.376
2021 Li J, Wang J, Zhang X, Elias C, Ye G, Evans D, Eda G, Redwing JM, Cassabois G, Gil B, Valvin P, He R, Liu B, Edgar JH. Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux. Acs Nano. PMID 33818058 DOI: 10.1021/acsnano.1c00115  0.51
2021 Sebastian A, Pendurthi R, Choudhury TH, Redwing JM, Das S. Benchmarking monolayer MoS and WS field-effect transistors. Nature Communications. 12: 693. PMID 33514710 DOI: 10.1038/s41467-020-20732-w  0.315
2020 Qian Q, Peng L, Perea-Lopez N, Fujisawa K, Zhang K, Zhang X, Choudhury TH, Redwing JM, Terrones M, Ma X, Huang S. Defect creation in WSe with a microsecond photoluminescence lifetime by focused ion beam irradiation. Nanoscale. PMID 31912844 DOI: 10.1039/C9Nr08390A  0.575
2020 Fox JJ, Zhang X, Balushi ZYA, Chubarov M, Kozhakhmetov A, Redwing JM. Van der Waals epitaxy and composition control of layered SnSxSe2−x alloy thin films Journal of Materials Research. 35: 1386-1396. DOI: 10.1557/Jmr.2020.19  0.566
2020 Choudhury TH, Zhang X, Al Balushi ZY, Chubarov M, Redwing JM. Epitaxial Growth of Two-Dimensional Layered Transition Metal Dichalcogenides Annual Review of Materials Research. 50: 155-177. DOI: 10.1146/Annurev-Matsci-090519-113456  0.628
2020 Xiong K, Zhang X, Li L, Zhang F, Davis B, Madjar A, Goritz A, Wietstruck M, Kaynak M, Strandwitz NC, Terrones M, Redwing JM, Hwang JCM. Temperature-Dependent RF Characteristics of Al₂O₃-Passivated WSe₂ MOSFETs Ieee Electron Device Letters. 41: 1134-1137. DOI: 10.1109/Led.2020.2999906  0.56
2020 Li J, Yuan C, Elias C, Wang J, Zhang X, Ye G, Huang C, Kuball M, Eda G, Redwing JM, He R, Cassabois G, Gil B, Valvin P, Pelini T, et al. Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient Chemistry of Materials. 32: 5066-5072. DOI: 10.1021/Acs.Chemmater.0C00830  0.572
2020 Zhang X, Lee S, Bansal A, Zhang F, Terrones M, Jackson TN, Redwing JM. Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition Journal of Crystal Growth. 533: 125471. DOI: 10.1016/J.Jcrysgro.2019.125471  0.635
2020 Huet B, Raskin J, Snyder DW, Redwing JM. Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology Carbon. 163: 95-104. DOI: 10.1016/J.Carbon.2020.02.074  0.306
2019 Wu Z, Li J, Zhang X, Redwing JM, Zheng Y. Room-Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects. Advanced Materials (Deerfield Beach, Fla.). e1904132. PMID 31621963 DOI: 10.1002/Adma.201904132  0.504
2019 Zhang X, Zhang F, Wang Y, Schulman DS, Zhang T, Bansal A, Alem N, Das S, Crespi VH, Terrones M, Redwing JM. Defect-Controlled Nucleation and Orientation of WSe on hBN - A Route to Single Crystal Epitaxial Monolayers. Acs Nano. PMID 30758945 DOI: 10.1021/Acsnano.8B09230  0.631
2019 Lundh JS, Chatterjee B, Song Y, Baca AG, Kaplar RJ, Beechem TE, Allerman AA, Armstrong AM, Klein BA, Bansal A, Talreja D, Pogrebnyakov A, Heller E, Gopalan V, Redwing JM, et al. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Applied Physics Letters. 115: 153503. DOI: 10.1063/1.5115013  0.312
2019 Wu W, Dass CK, Hendrickson JR, Montaño RD, Fischer RE, Zhang X, Choudhury TH, Redwing JM, Wang Y, Pettes MT. Locally defined quantum emission from epitaxial few-layer tungsten diselenide Applied Physics Letters. 114: 213102. DOI: 10.1063/1.5091779  0.606
2019 Bansal A, Wang K, Lundh JS, Choi S, Redwing JM. Effect of Ge doping on growth stress and conductivity in AlxGa1-xN Applied Physics Letters. 114: 142101. DOI: 10.1063/1.5080680  0.527
2019 Xuan Y, Jain A, Zafar S, Lotfi R, Nayir N, Wang Y, Choudhury TH, Wright S, Feraca J, Rosenbaum L, Redwing JM, Crespi V, van Duin AC. Multi-scale modeling of gas-phase reactions in metal-organic chemical vapor deposition growth of WSe2 Journal of Crystal Growth. 527: 125247. DOI: 10.1016/J.Jcrysgro.2019.125247  0.388
2019 Walter TN, Lee S, Zhang X, Chubarov M, Redwing JM, Jackson TN, Mohney SE. Atomic layer deposition of ZnO on MoS2 and WSe2 Applied Surface Science. 480: 43-51. DOI: 10.1016/J.Apsusc.2019.02.182  0.64
2019 Bansal A, Martin NC, Wang K, Redwing JM. GaN Heteroepitaxy on Strain-Engineered (111) Si/Si 1-x Ge x Journal of Electronic Materials. 48: 3355-3362. DOI: 10.1007/S11664-019-07031-X  0.495
2019 Wu Z, Li J, Zhang X, Redwing JM, Zheng Y. Chiral Metamaterials: Room‐Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects (Adv. Mater. 49/2019) Advanced Materials. 31: 1970347. DOI: 10.1002/Adma.201970347  0.465
2018 Zhang K, Bersch BM, Zhang F, Briggs N, Subramanian S, Xu K, Chubarov M, Wang K, Lerach J, Redwing JM, Fullerton-Shirey SK, Terrones M, Robinson JA. Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide. Acs Applied Materials & Interfaces. PMID 30384598 DOI: 10.1021/Acsami.8B16374  0.44
2018 Lin YC, Jariwala B, Bersch BM, Xu K, Nie Y, Wang B, Eichfeld SM, Zhang X, Choudhury TH, Pan Y, Addou R, Smyth CM, Li J, Zhang K, Haque MA, ... ... Redwing JM, et al. Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. Acs Nano. PMID 29360349 DOI: 10.1021/Acsnano.7B07059  0.77
2018 Zhang X, Choudhury TH, Chubarov M, Xiang Y, Jariwala B, Zhang F, Alem N, Wang GC, Robinson JA, Redwing JM. Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire. Nano Letters. PMID 29342357 DOI: 10.1021/Acs.Nanolett.7B04521  0.611
2018 Ding L, Ukhtary MS, Chubarov M, Choudhury TH, Zhang F, Yang R, Zhang A, Fan JA, Terrones M, Redwing JM, Yang T, Li M, Saito R, Huang S. Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy Ieee Transactions On Electron Devices. 65: 4059-4067. DOI: 10.1109/Ted.2018.2847230  0.362
2018 Choudhury TH, Simchi H, Boichot R, Chubarov M, Mohney SE, Redwing JM. Chalcogen Precursor Effect on Cold-Wall Gas-Source Chemical Vapor Deposition Growth of WS2 Crystal Growth & Design. 18: 4357-4364. DOI: 10.1021/Acs.Cgd.8B00306  0.453
2018 Bachu S, Hickey DR, Choudhury TH, Chubarov M, Redwing JM, Alem N. High Resolution S/TEM Study of Defects in MOCVD Grown Mono to Few Layer WS2 Microscopy and Microanalysis. 24: 1636-1637. DOI: 10.1017/S1431927618008668  0.323
2018 Kozhakhmetov A, Choudhury TH, Balushi ZYA, Chubarov M, Redwing JM. Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition Journal of Crystal Growth. 486: 137-141. DOI: 10.1016/J.Jcrysgro.2018.01.031  0.458
2018 Hainey MF, Balushi ZYA, Wang K, Martin NC, Bansal A, Chubarov M, Redwing JM. Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum-Induced Crystallization (Phys. Status Solidi RRL 3/2018) Physica Status Solidi-Rapid Research Letters. 12: 1870311. DOI: 10.1002/Pssr.201870311  0.412
2018 Hainey MF, Balushi ZYA, Wang K, Martin NC, Bansal A, Chubarov M, Redwing JM. Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization Physica Status Solidi-Rapid Research Letters. 12: 1700392. DOI: 10.1002/Pssr.201700392  0.415
2017 Chubarov M, Choudhury TH, Zhang X, Redwing JM. In-Plane X-ray Diffraction for Characterization of Monolayer and Few-Layer Transition Metal Dichalcogenides Films. Nanotechnology. PMID 29239306 DOI: 10.1088/1361-6528/Aaa1Bd  0.597
2017 Balushi ZYA, Redwing JM. In situ stress measurements during MOCVD growth of thick N-polar InGaN Journal of Applied Physics. 122: 85303. DOI: 10.1063/1.4998745  0.386
2017 Kendrick C, Kuo M, Li J, Shen H, Mayer TS, Redwing JM. Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride Journal of Applied Physics. 122: 235101. DOI: 10.1063/1.4993632  0.654
2017 MFH, Innocent-Dolor J, Choudhury TH, Redwing JM. Controlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment Journal of Applied Physics. 121: 115301. DOI: 10.1063/1.4978706  0.355
2017 Balushi ZYA, Redwing JM. The effect of polarity on MOCVD growth of thick InGaN Applied Physics Letters. 110: 22101. DOI: 10.1063/1.4972967  0.366
2017 Simchi H, Walter TN, Choudhury TH, Kirkley LY, Redwing JM, Mohney SE. Sulfidation of 2D transition metals (Mo, W, Re, Nb, Ta): thermodynamics, processing, and characterization Journal of Materials Science. 52: 10127-10139. DOI: 10.1007/S10853-017-1228-X  0.385
2016 Al Balushi ZY, Wang K, Ghosh RK, Vilá RA, Eichfeld SM, Caldwell JD, Qin X, Lin YC, DeSario PA, Stone G, Subramanian S, Paul DF, Wallace RM, Datta S, Redwing JM, et al. Two-dimensional gallium nitride realized via graphene encapsulation. Nature Materials. PMID 27571451 DOI: 10.1038/Nmat4742  0.75
2016 Shang SL, Lindwall G, Wang Y, Redwing JM, Anderson T, Liu ZK. Lateral Versus Vertical Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Thermodynamic Insight into MoS2. Nano Letters. PMID 27540753 DOI: 10.1021/Acs.Nanolett.6B02443  0.396
2016 Ke Y, Hainey M, Won D, Weng X, Eichfeld SM, Redwing JM. Carrier gas effects on aluminum-catalyzed nanowire growth. Nanotechnology. 27: 135605. PMID 26900836 DOI: 10.1088/0957-4484/27/13/135605  0.724
2016 Wang X, Shen H, Eichfield SM, Mayer TS, Redwing JM. Radial Junction Silicon Nanowire Photovoltaics With Heterojunction With Intrinsic Thin Layer (HIT) Structure Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2601949  0.656
2016 Hainey MF, Redwing JM. Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications Applied Physics Reviews. 3. DOI: 10.1063/1.4954398  0.452
2016 Zhang F, AlSaud MA, Hainey M, Wang K, Redwing JM, Alem N. Study on Chemical Vapor Deposition Growth and Transmission electron Microscopy MoS 2 /h-BN Heterostructure Microscopy and Microanalysis. 22: 1640-1641. DOI: 10.1017/S1431927616009041  0.395
2016 Gagnon JC, Shen H, Yuwen Y, Wang K, Mayer TS, Redwing JM. Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates Journal of Crystal Growth. 446: 1-6. DOI: 10.1016/J.Jcrysgro.2016.04.027  0.821
2016 Hainey MF, Chen C, Ke Y, Black MR, Redwing JM. Controlled faceting and morphology for light trapping in aluminum-catalyzed silicon nanostructures Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.04.009  0.475
2016 Brom JE, Weiss L, Choudhury TH, Redwing JM. Hybrid physical-chemical vapor deposition of Bi2Se3 films Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.02.027  0.816
2016 Kendrick CE, Redwing JM. Silicon Micro/Nanowire Solar Cells Semiconductors and Semimetals. 94: 185-225. DOI: 10.1016/Bs.Semsem.2015.10.001  0.385
2016 Zhang X, Al Balushi ZY, Zhang F, Choudhury TH, Eichfeld SM, Alem N, Jackson TN, Robinson JA, Redwing JM. Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-016-5033-0  0.785
2016 Gong Y, Zhang X, Redwing JM, Jackson TN. Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2 Journal of Electronic Materials. 45: 6280-6284. DOI: 10.1007/S11664-016-4987-2  0.606
2015 Wang X, Ke Y, Kendrick CE, Weng X, Shen H, Kuo M, Mayer TS, Redwing JM. The effects of shell layer morphology and processing on the electrical and photovoltaic properties of silicon nanowire radial p+ - n+ junctions. Nanoscale. 7: 7267-74. PMID 25811140 DOI: 10.1039/C5Nr00512D  0.662
2015 Eichfeld SM, Hossain L, Lin YC, Piasecki AF, Kupp B, Birdwell AG, Burke RA, Lu N, Peng X, Li J, Azcatl A, McDonnell S, Wallace RM, Kim MJ, Mayer TS, ... Redwing JM, et al. Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition. Acs Nano. 9: 2080-7. PMID 25625184 DOI: 10.1021/Nn5073286  0.741
2015 Al Balushi ZY, Redwing JM. In situ stress measurements during direct MOCVD growth of GaN on SiC Journal of Materials Research. 30: 2900-2909. DOI: 10.1557/Jmr.2015.210  0.469
2015 Kumar R, Brom JE, Redwing JM, Hunte F. Magnetotransport phenomena in Bi2Se3 thin film topological insulators grown by hybrid physical chemical vapor deposition Journal of Applied Physics. 117. DOI: 10.1063/1.4907802  0.815
2015 Al Balushi ZY, Miyagi T, Lin YC, Wang K, Calderin L, Bhimanapati G, Redwing JM, Robinson JA. The impact of graphene properties on GaN and AlN nucleation Surface Science. 634: 81-88. DOI: 10.1016/J.Susc.2014.11.020  0.392
2015 Chen C, Zhang X, Krishna L, Kendrick C, Shang SL, Toberer E, Liu ZK, Tamboli A, Redwing JM. Synthesis, characterization and chemical stability of silicon dichalcogenides, Si(Se x S1-x )2 Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.12.005  0.6
2014 Bergren MR, Kendrick CE, Neale NR, Redwing JM, Collins RT, Furtak TE, Beard MC. Ultrafast Electrical Measurements of Isolated Silicon Nanowires and Nanocrystals. The Journal of Physical Chemistry Letters. 5: 2050-7. PMID 26270492 DOI: 10.1021/Jz500863A  0.442
2014 Brom JE, Redwing JM. Metalorganic chemical vapor deposition of Bi<inf>2</inf>Se<inf>3</inf> thin films for topological insulator applications Proceedings of Spie - the International Society For Optical Engineering. 9174. DOI: 10.1117/12.2065151  0.826
2014 Chen C, Zhang W, Xing Z, Sun Y, Jia R, Jin Z, Liu X, Redwing JM. Study of wafer thickness scaling in n-type rear-emitter solar cells with different bulk lifetimes Journal of Applied Physics. 116. DOI: 10.1063/1.4891526  0.328
2014 Wang J, Hewitt AS, Kumar R, Boltersdorf J, Guan T, Hunte F, Maggard PA, Brom JE, Redwing JM, Dougherty DB. Molecular doping control at a topological insulator surface: F 4-TCNQ on Bi2Se3 Journal of Physical Chemistry C. 118: 14860-14865. DOI: 10.1021/Jp412690H  0.809
2014 Kendrick C, Klafehn G, Guan T, Anderson I, Shen H, Redwing J, Collins R. Controlled growth of SiNPs by plasma synthesis Solar Energy Materials and Solar Cells. 124: 1-9. DOI: 10.1016/J.Solmat.2014.01.026  0.639
2014 Gagnon JC, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates Journal of Crystal Growth. 393: 98-102. DOI: 10.1016/J.Jcrysgro.2013.08.031  0.778
2014 Redwing JM, Miao X, Li X. Vapor-Liquid-Solid Growth of Semiconductor Nanowires Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. 3: 399-439. DOI: 10.1016/B978-0-444-63304-0.00009-3  0.356
2014 Hainey M, Eichfeld SM, Shen H, Yim J, Black MR, Redwing JM. Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires Journal of Electronic Materials. DOI: 10.1007/S11664-014-3565-8  0.815
2013 Lundgren C, Lopez R, Redwing J, Melde K. FDTD modeling of solar energy absorption in silicon branched nanowires. Optics Express. 21: A392-400. PMID 24104426 DOI: 10.1364/Oe.21.00A392  0.336
2013 Eichfeld SM, Hainey MF, Shen H, Kendrick CE, Fucinato EA, Yim J, Black MR, Redwing JM. Vapor-liquid-solid growth of 〈110〉 silicon nanowire arrays Proceedings of Spie - the International Society For Optical Engineering. 8820. DOI: 10.1117/12.2026825  0.816
2013 Won D, Weng X, Al Balushi ZY, Redwing JM. Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates Applied Physics Letters. 103. DOI: 10.1063/1.4845575  0.418
2013 Tungare M, Weng X, Leathersich JM, Suvarna P, Redwing JM, Shahedipour-Sandvik F. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate Journal of Applied Physics. 113. DOI: 10.1063/1.4798598  0.499
2013 Won D, Redwing JM. Effect of AlN buffer layers on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates Journal of Crystal Growth. 377: 51-58. DOI: 10.1016/J.Jcrysgro.2013.04.038  0.466
2013 Yoon E, Nam OH, Kim JK, Kuech TF, Caneau C, Redwing JM, Dadgar A. 16th International Conference on Metalorganic Vapor Phase Epitaxy Journal of Crystal Growth. 370: 370. DOI: 10.1016/J.Jcrysgro.2013.03.008  0.461
2013 Won D, Weng X, Yuwen YA, Ke Y, Kendrick C, Shen H, Mayer TS, Redwing JM. GaN growth on Si pillar arrays by metalorganic chemical vapor deposition Journal of Crystal Growth. 370: 259-264. DOI: 10.1016/J.Jcrysgro.2012.10.004  0.703
2013 Leathersich JM, Tungare M, Weng X, Suvarna P, Agnihotri P, Evans M, Redwing J, Shahedipour-Sandvik F. Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy Journal of Electronic Materials. 42: 833-837. DOI: 10.1007/S11664-013-2491-5  0.445
2013 Kendrick C, Bomberger C, Dawley N, Georgiev J, Shen H, Redwing JM. Silicon nanowire growth on poly-silicon-on-quartz substrates formed by aluminum-induced crystallization Crystal Research and Technology. 48: 658-665. DOI: 10.1002/Crat.201300260  0.685
2012 Eichfeld CM, Gerstl SS, Prosa T, Ke Y, Redwing JM, Mohney SE. Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst. Nanotechnology. 23: 215205. PMID 22552162 DOI: 10.1088/0957-4484/23/21/215205  0.384
2012 Redwing JM, Manning IC, Weng X, Eichfeld SM, Acord JD, Fanton MA, Snyder DW. Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films Materials Research Society Symposium Proceedings. 1396: 183-191. DOI: 10.1557/Opl.2012.215  0.819
2012 Yao Y, Aldous JD, Won D, Redwing JM, Linhart W, McConville CF, Reeves RJ, Veal TD, Durbin SM. Epitaxial InGaN on nitridated Si(111) for photovoltaic applications Conference Record of the Ieee Photovoltaic Specialists Conference. 2617-2620. DOI: 10.1109/PVSC.2012.6318131  0.403
2012 Brom JE, Ke Y, Du R, Won D, Weng X, Andre K, Gagnon JC, Mohney SE, Li Q, Chen K, Xi XX, Redwing JM. Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.4704680  0.814
2012 Won D, Weng X, Redwing JM. Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants Applied Physics Letters. 100. DOI: 10.1063/1.3676275  0.436
2012 Raghavan S, Manning IC, Weng X, Redwing JM. Dislocation bending and tensile stress generation in GaN and AlGaN films Journal of Crystal Growth. 359: 35-42. DOI: 10.1016/J.Jcrysgro.2012.08.020  0.818
2012 Gagnon JC, Tungare M, Weng X, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. In situ stress measurements during GaN growth on ion-implanted AlN/Si substrates Journal of Electronic Materials. 41: 865-872. DOI: 10.1007/S11664-011-1852-1  0.766
2011 Ke Y, Wang X, Weng XJ, Kendrick CE, Yu YA, Eichfeld SM, Yoon HP, Redwing JM, Mayer TS, Habib YM. Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires. Nanotechnology. 22: 445401. PMID 21983364 DOI: 10.1088/0957-4484/22/44/445401  0.756
2011 Ganapati V, Fenning DP, Bertoni MI, Kendrick CE, Fecych AE, Redwing JM, Buonassisi T. Seeding of silicon wire growth by out-diffused metal precipitates. Small (Weinheim An Der Bergstrasse, Germany). 7: 563-7. PMID 21370455 DOI: 10.1002/Smll.201002250  0.377
2011 Eichfeld SM, Shen H, Eichfeld CM, Mohney SE, Dickey EC, Redwing JM. Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl4 Journal of Materials Research. 26: 2207-2214. DOI: 10.1557/Jmr.2011.144  0.799
2011 Ye G, Shi K, Burke R, Redwing JM, Mohney SE. Ti/Al ohmic contacts to n-type GaN nanowires Journal of Nanomaterials. 2011. DOI: 10.1155/2011/876287  0.322
2011 Chen K, Zhuang CG, Li Q, Weng X, Redwing JM, Zhu Y, Voyles PM, Xi XX. MgB2/MgO/MgB2 josephson junctions for high-speed circuits Ieee Transactions On Applied Superconductivity. 21: 115-118. DOI: 10.1109/Tasc.2010.2093853  0.389
2011 Redwing JM, Ke Y, Wang X, Eichfeld C, Weng X, Kendrick CE, Mohney SE, Mayer TS. Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135144  0.374
2011 Dai W, Ferrando V, Pogrebnyakov AV, Wilke RHT, Chen K, Weng X, Redwing J, Bark CW, Eom CB, Zhu Y, Voyles PM, Rickel D, Betts JB, Mielke CH, Gurevich A, et al. High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources Superconductor Science and Technology. 24. DOI: 10.1088/0953-2048/24/12/125014  0.393
2011 Rathi SJ, Jariwala BN, Beach JD, Stradins P, Taylor PC, Weng X, Ke Y, Redwing JM, Agarwal S, Collins RT. Tin-catalyzed plasma-assisted growth of silicon nanowires Journal of Physical Chemistry C. 115: 3833-3839. DOI: 10.1021/Jp1066428  0.421
2011 Kendrick CE, Redwing JM. The effect of pattern density and wire diameter on the growth rate of micron diameter silicon wires Journal of Crystal Growth. 337: 1-6. DOI: 10.1016/J.Jcrysgro.2011.09.049  0.429
2011 Eichfeld SM, Won D, Trumbull K, Labella M, Weng X, Robinson J, Snyder D, Redwing JM, Paskova T, Udwary K, Mulholland G, Preble E, Evans KR. Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2053-2055. DOI: 10.1002/Pssc.201001059  0.761
2010 Vallett AL, Minassian S, Kaszuba P, Datta S, Redwing JM, Mayer TS. Fabrication and characterization of axially doped silicon nanowire tunnel field-effect transistors. Nano Letters. 10: 4813-8. PMID 21073180 DOI: 10.1021/Nl102239Q  0.713
2010 Minassian S, Weng X, Redwing JM. Vapor-liquid-solid growth of Si 1-xGe x and Ge/Si 1-xGe x axial heterostructured nanowires Ecs Transactions. 33: 699-706. DOI: 10.1149/1.3487600  0.746
2010 Kendrick CE, Eichfeld SM, Ke Y, Weng X, Wang X, Mayer TS, Redwing JM. Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.861571  0.769
2010 Hu W, Liu B, Dellas NS, Eichfeld SM, Mohney SE, Redwing JM, Mayer TS. Lithography-free synthesis of freestanding gold nanoparticle arrays encapsulated within dielectric nanowires Proceedings of Spie - the International Society For Optical Engineering. 7610. DOI: 10.1117/12.846766  0.636
2010 Vallett AL, Minassian S, Datta S, Redwing JM, Mayer TS. Fabrication of axially-doped silicon nanowire tunnel FETs and characterization of tunneling current Device Research Conference - Conference Digest, Drc. 273-274. DOI: 10.1109/DRC.2010.5551962  0.708
2010 Zhu Y, Pogrebnyakov AV, Wilke RH, Chen K, Xi XX, Redwing JM, Zhuang CG, Feng QR, Gan ZZ, Singh RK, Shen Y, Newman N, Rowell JM, Hunte F, Jaroszynski J, et al. Nanoscale disorder in pure and doped MgB2 thin films Superconductor Science and Technology. 23. DOI: 10.1088/0953-2048/23/9/095008  0.404
2010 Zhuang C, Chen K, Redwing JM, Li Q, Xi XX. Surface morphology and thickness dependence of the properties of MgB 2 thin films by hybrid physical-chemical vapor deposition Superconductor Science and Technology. 23. DOI: 10.1088/0953-2048/23/5/055004  0.409
2010 Dellas NS, Minassian S, Redwing JM, Mohney SE. Formation of nickel germanide contacts to Ge nanowires Applied Physics Letters. 97. DOI: 10.1063/1.3533808  0.739
2010 Kendrick CE, Yoon HP, Yuwen YA, Barber GD, Shen H, Mallouk TE, Dickey EC, Mayer TS, Redwing JM. Radial junction silicon wire array solar cells fabricated by gold-catalyzed vapor-liquid-solid growth Applied Physics Letters. 97. DOI: 10.1063/1.3496044  0.655
2010 Won D, Weng X, Redwing JM. Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3487955  0.458
2010 Yoon HP, Yuwen YA, Kendrick CE, Barber GD, Podraza NJ, Redwing JM, Mallouk TE, Wronski CR, Mayer TS. Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths Applied Physics Letters. 96. DOI: 10.1063/1.3432449  0.332
2010 Chen K, Zhuang CG, Li Q, Zhu Y, Voyles PM, Weng X, Redwing JM, Singh RK, Kleinsasser AW, Xi XX. High-Jc MgB2 Josephson junctions with operating temperature up to 40 K Applied Physics Letters. 96: 042506. DOI: 10.1063/1.3298366  0.342
2010 Weng X, Burke RA, Dickey EC, Redwing JM. Effect of reactor pressure on catalyst composition and growth of GaSb nanowires Journal of Crystal Growth. 312: 514-519. DOI: 10.1016/J.Jcrysgro.2009.11.035  0.35
2010 Manning IC, Weng X, Fanton MA, Snyder DW, Redwing JM. Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN Journal of Crystal Growth. 312: 1301-1306. DOI: 10.1016/J.Jcrysgro.2009.11.024  0.809
2010 Burke RA, Weng X, Kuo MW, Song YW, Itsuno AM, Mayer TS, Durbin SM, Reeves RJ, Redwing JM. Growth and characterization of unintentionally doped GaSb nanowires Journal of Electronic Materials. 39: 355-364. DOI: 10.1007/S11664-010-1140-5  0.458
2009 Ke Y, Weng X, Redwing JM, Eichfeld CM, Swisher TR, Mohney SE, Habib YM. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth. Nano Letters. 9: 4494-9. PMID 19904918 DOI: 10.1021/Nl902808R  0.466
2009 Weng X, Burke RA, Redwing JM. The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal-organic chemical vapor deposition. Nanotechnology. 20: 085610. PMID 19417458 DOI: 10.1088/0957-4484/20/8/085610  0.372
2009 Nimmatoori P, Zhang Q, Dickey EC, Redwing JM. Suppression of the vapor-liquid-solid growth of silicon nanowires by antimony addition. Nanotechnology. 20: 025607. PMID 19417276 DOI: 10.1088/0957-4484/20/2/025607  0.822
2009 Allen MW, Weng X, Redwing JM, Sarpatwari K, Mohney SE, von Wenckstern H, Grundmann M, Durbin SM. Temperature-dependent properties of nearly ideal ZnO schottky diodes Ieee Transactions On Electron Devices. 56: 2160-2164. DOI: 10.1109/Ted.2009.2026393  0.321
2009 Hu W, Zhong X, Morrow T, Keating CD, Eichfeld S, Redwing JM, Mayer TS. Axially-doped silicon nanowire field effect transistors for real-time sensing in physiologically relevant buffer solutions Device Research Conference - Conference Digest, Drc. 131-132. DOI: 10.1109/DRC.2009.5354875  0.71
2009 Hanna M, Wang S, Redwing JM, Xi XX, Salama K. Thickness dependence of critical current density in MgB2 films fabricated by ex situ annealing of CVD-grown B films in Mg vapor Superconductor Science and Technology. 22. DOI: 10.1088/0953-2048/22/1/015024  0.403
2009 Manning IC, Weng X, Acord JD, Fanton MA, Snyder DW, Redwing JM. Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films Journal of Applied Physics. 106. DOI: 10.1063/1.3160331  0.828
2009 Burke RA, Lamborn DR, Weng X, Redwing JM. Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires Journal of Crystal Growth. 311: 3409-3416. DOI: 10.1016/J.Jcrysgro.2009.03.050  0.489
2009 Lamborn DR, Wilke RHT, Li Q, Xi XX, Snyder DW, Redwing JM. Modeling studies of an impinging jet reactor design for hybrid physical-chemical vapor deposition of superconducting MgB2 films Journal of Crystal Growth. 311: 1501-1507. DOI: 10.1016/J.Jcrysgro.2009.01.116  0.434
2008 Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS. In situ axially doped n-channel silicon nanowire field-effect transistors. Nano Letters. 8: 4359-64. PMID 19367848 DOI: 10.1021/Nl8022059  0.784
2008 Li M, Bhiladvala RB, Morrow TJ, Sioss JA, Lew KK, Redwing JM, Keating CD, Mayer TS. Bottom-up assembly of large-area nanowire resonator arrays. Nature Nanotechnology. 3: 88-92. PMID 18654467 DOI: 10.1038/Nnano.2008.26  0.565
2008 Highstrete C, Lee M, Vallett AL, Eichfeld SM, Redwing JM, Mayer TS. Disorder dominated microwave conductance spectra of doped silicon nanowire arrays. Nano Letters. 8: 1557-61. PMID 18444685 DOI: 10.1021/Nl072496P  0.722
2008 Clark TE, Nimmatoori P, Lew KK, Pan L, Redwing JM, Dickey EC. Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires. Nano Letters. 8: 1246-52. PMID 18321076 DOI: 10.1021/Nl072849K  0.84
2008 Woodruff SM, Dellas NS, Liu BZ, Eichfeld SM, Mayer TS, Redwing JM, Mohney SE. Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1592-1596. DOI: 10.1116/1.2939256  0.736
2008 Liu B, Wang Y, Ho TT, Lew KK, Eichfeld SM, Redwing JM, Mayer TS, Mohney SE. Oxidation of silicon nanowires for top-gated field effect transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 370-374. DOI: 10.1116/1.2899333  0.777
2008 Chen K, Veldhorst M, Lee CH, Lamborn DR, Defrain R, Redwing JM, Li Q, Xi XX. Properties of MgB2 films grown at various temperatures by hybrid physical-chemical vapour deposition Superconductor Science and Technology. 21. DOI: 10.1088/0953-2048/21/9/095015  0.406
2008 Wang SF, Chen K, Lee C-, Soukiassian A, Lamborn DR, Defrain R, Redwing JM, Li Q, Schlom DG, Xi XX. High quality MgB2 thick films and large-area films fabricated by hybrid physical-chemical vapor deposition with a pocket heater Superconductor Science and Technology. 21: 85019. DOI: 10.1088/0953-2048/21/8/085019  0.404
2008 Hanna M, Wang S, Eck AD, Wilke RHT, Chen K, Soukiassian A, Lee C, Dai W, Li Q, Redwing JM, Schlom DG, Xi XX, Salama K. Clean epitaxial MgB2films fabricated by theex situannealing of chemical vapour deposition-grown B films in Mg vapour Superconductor Science and Technology. 21: 045005. DOI: 10.1088/0953-2048/21/4/045005  0.403
2008 Acord JD, Manning IC, Weng X, Snyder DW, Redwing JM. In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films Applied Physics Letters. 93. DOI: 10.1063/1.2986448  0.822
2008 Jain A, Weng X, Raghavan S, Vanmil BL, Myers T, Redwing JM. Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2973681  0.4
2008 Meyer DJ, Flemish JR, Redwing JM. Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors Applied Physics Letters. 92. DOI: 10.1063/1.2928236  0.301
2008 Dickey EC, Clark TE, Zhang X, Redwing JM. Size effects in the vapor-liquid solid (VLS) growth of semiconductor nanowires Microscopy and Microanalysis. 14: 6-7. DOI: 10.1017/S1431927608087382  0.371
2008 Fanton MA, Weiland BE, Redwing JM. Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition Journal of Crystal Growth. 310: 4088-4093. DOI: 10.1016/J.Jcrysgro.2008.06.027  0.744
2008 Acord JD, Weng X, Dickey EC, Snyder DW, Redwing JM. Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1-xN MOCVD on SiC substrates Journal of Crystal Growth. 310: 2314-2319. DOI: 10.1016/J.Jcrysgro.2007.11.153  0.401
2008 Lamborn DR, Wilke RHT, Li Q, Xi A, Snyder DW, Redwing JM. Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition Advanced Materials. 20: 319-323. DOI: 10.1002/Adma.200701835  0.434
2008 Nimmatoori P, Zhang Q, Zhang X, Dickey EC, Redwing JM. 23b. Growth characteristics and properties of Si and Si1-xGex nanowires Nanoscale Science and Engineering Forum Conference, Presentations At the 2008 Aiche Spring National Meeting. 26-32.  0.822
2008 Nimmatoori P, Zhang Q, Zhang X, Dickey EC, Redwing JM. 23b. Growth characteristics and properties of Si and Si 1-xGex nanowires Aiche Annual Meeting, Conference Proceedings 0.822
2007 Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC. Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires. Nano Letters. 7: 3241-5. PMID 17894516 DOI: 10.1021/Nl071132U  0.815
2007 Goodey AP, Eichfeld SM, Lew KK, Redwing JM, Mallouk TE. Silicon nanowire array photelectrochemical cells. Journal of the American Chemical Society. 129: 12344-5. PMID 17892289 DOI: 10.1021/Ja073125D  0.8
2007 Eichfeld CM, Wood C, Liu B, Eichfeld SM, Redwing JM, Mohney SE. Selective plating for junction delineation in silicon nanowires. Nano Letters. 7: 2642-4. PMID 17696558 DOI: 10.1021/Nl0710248  0.711
2007 Lamborn DR, Wilke RHT, Li Q, Xi XX, Snyder DW, Redwing JM. Dual-heater reactor design for hybrid physical-chemical vapor deposition of MgB2 thin films Ieee Transactions On Applied Superconductivity. 17: 2862-2866. DOI: 10.1109/Tasc.2007.897990  0.445
2007 Pogrebnyakov AV, Maertz E, Wilke RHT, Li Q, Soukiassian A, Schlom DG, Redwing JM, Findikoglu A, Xi XX. Polycrystalline ${\rm MgB}_{2}$ Films on Flexible YSZ Substrates Grown by Hybrid Physical-Chemical Vapor Deposition Ieee Transactions On Applied Superconductivity. 17: 2854-2857. DOI: 10.1109/Tasc.2007.897981  0.427
2007 Ji H, Kuball M, Burke RA, Redwing JM. Vibrational and optical properties of GaN nanowires synthesized by Ni-assisted catalytic growth Nanotechnology. 18. DOI: 10.1088/0957-4484/18/44/445704  0.464
2007 Eichfeld SM, Ho TT, Eichfeld CM, Cranmer A, Mohney SE, Mayer TS, Redwing JM. Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays Nanotechnology. 18. DOI: 10.1088/0957-4484/18/31/315201  0.735
2007 Zhu Y, Larbalestier DC, Voyles PM, Pogrebnyakov AV, Xi XX, Redwing JM. Nanoscale disorder in high critical field, carbon-doped MgB2 hybrid physical-chemical vapor deposition thin films Applied Physics Letters. 91. DOI: 10.1063/1.2775088  0.383
2007 Fanton MA, Weiland BE, Snyder DW, Redwing JM. Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition Journal of Applied Physics. 101. DOI: 10.1063/1.2399882  0.742
2007 Clark T, Zhang X, Lew K, Pan L, Nimmatoori P, Redwing J, Dickey E. Diameter Dependence of Ge-doped Si Nanowires Fabricated via Vapor-Liquid-Solid Growth Microscopy and Microanalysis. 13. DOI: 10.1017/S143192760707804X  0.834
2007 Xi XX, Pogrebnyakov AV, Xu SY, Chen K, Cui Y, Maertz EC, Zhuang CG, Li Q, Lamborn DR, Redwing JM, Liu ZK, Soukiassian A, Schlom DG, Weng XJ, Dickey EC, et al. MgB2 thin films by hybrid physical-chemical vapor deposition Physica C: Superconductivity and Its Applications. 456: 22-37. DOI: 10.1016/J.Physc.2007.01.029  0.418
2007 Lamborn DR, Snyder DW, Xi XX, Redwing JM. Modeling studies of the chemical vapor deposition of boron films from B2H6 Journal of Crystal Growth. 299: 358-364. DOI: 10.1016/J.Jcrysgro.2006.11.253  0.447
2007 Weng X, Raghavan S, Acord JD, Jain A, Dickey EC, Redwing JM. Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates Journal of Crystal Growth. 300: 217-222. DOI: 10.1016/J.Jcrysgro.2006.11.030  0.444
2007 Sheldon BW, Bhandari A, Bower AF, Raghavan S, Weng X, Redwing JM. Steady-state tensile stresses during the growth of polycrystalline films Acta Materialia. 55: 4973-4982. DOI: 10.1016/J.Actamat.2007.05.008  0.389
2007 Weng X, Acord JD, Jain A, Dickey EC, Redwing JM. Evolution of threading dislocation density and stress in GaN films grown on (111) Si substrates by metalorganic chemical vapor deposition Journal of Electronic Materials. 36: 346-352. DOI: 10.1007/S11664-006-0055-7  0.413
2006 Li Q, Liu BT, Hu YF, Chen J, Gao H, Shan L, Wen HH, Pogrebnyakov AV, Redwing JM, Xi XX. Large anisotropic normal-state magnetoresistance in clean MgB2 thin films. Physical Review Letters. 96: 167003. PMID 16712262 DOI: 10.1103/Physrevlett.96.167003  0.371
2006 Everson WJ, Heydemann VD, Gamble RD, Snyder DW, Goda G, Skowronski M, Grim JR, Berkman E, Redwing JM, Acord JD. Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide Materials Science Forum. 1091-1094. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1091  0.437
2006 Orgiani P, Cui Y, Chen J, Ferrando V, Pogrebnyakov AV, Redwing JM, Li Q, Xi XX. MgB2 Films, Fibres and Heterostructures Grown by an Innovative Hybrid Physical-Chemical Vapor Deposition Technique Advances in Science and Technology. 47: 55-62. DOI: 10.4028/Www.Scientific.Net/Ast.47.55  0.384
2006 Weng X, Raghavan S, Dickey EC, Redwing JM. Stress and microstructure evolution in compositionally graded Al 1-xGaxN buffer layers for GaN growth on Si Materials Research Society Symposium Proceedings. 892: 27-32. DOI: 10.1557/Proc-0892-Ff02-02  0.38
2006 Lew KK, Pan L, Dickey EC, Redwing JM. Effect of growth conditions on the composition and structure of Si1-xGex nanowires grown by vapor-liquid-solid growth Journal of Materials Research. 21: 2876-2881. DOI: 10.1557/Jmr.2006.0349  0.71
2006 Chen J, Ferrando V, Orgiani P, Pogrebnyakov AV, Wilke RHT, Betts JB, Mielke CH, Redwing JM, Xi XX, Li Q. Enhancement of flux pinning and high-field critical current density in carbon-alloyed Mg B 2 thin films Physical Review B. 74: 174511. DOI: 10.1103/Physrevb.74.174511  0.322
2006 Meyer DJ, Flemish JR, Redwing JM. SF6O2 plasma effects on silicon nitride passivation of AlGaNGaN high electron mobility transistors Applied Physics Letters. 89. DOI: 10.1063/1.2400100  0.366
2006 Chen K, Cui Y, Li Q, Xi XX, Cybart SA, Dynes RC, Weng X, Dickey EC, Redwing JM. Planar MgB 2 superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial MgB 2/TiB 2 bilayers Applied Physics Letters. 88. DOI: 10.1063/1.2208555  0.361
2006 Pogrebnyakov AV, Xi XX, Redwing JM, Vaithyanathan V, Schlom DG, Soukiassian A, Mi SB, Jia CL, Giencke JE, Eom CB, Chen J, Hu YF, Cui Y, Li Q. Erratum: “Properties of MgB2 thin films with carbon doping” [Appl. Phys. Lett. 85, 2017 (2004)] Applied Physics Letters. 88: 209903. DOI: 10.1063/1.2206990  0.304
2006 Raghavan S, Weng X, Dickey E, Redwing JM. Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2168020  0.438
2006 Weng X, Acord J, Jain A, Raghavan S, Redwing J, Dickey E. Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers Microscopy and Microanalysis. 12: 906-907. DOI: 10.1017/S1431927606065524  0.494
2005 Xu S, Tian M, Wang J, Xu J, Redwing JM, Chan MH. Nanometer-scale modification and welding of silicon and metallic nanowires with a high-intensity electron beam. Small (Weinheim An Der Bergstrasse, Germany). 1: 1221-9. PMID 17193423 DOI: 10.1002/Smll.200500240  0.352
2005 Wang Y, Lew KK, Ho TT, Pan L, Novak SW, Dickey EC, Redwing JM, Mayer TS. Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires. Nano Letters. 5: 2139-43. PMID 16277441 DOI: 10.1021/Nl051442H  0.625
2005 Pan L, Lew KK, Redwing JM, Dickey EC. Stranski-Krastanow growth of germanium on silicon nanowires. Nano Letters. 5: 1081-5. PMID 15943447 DOI: 10.1021/Nl050605Z  0.694
2005 Dilts SM, Mohmmad A, Lew KK, Redwing JM, Mohney SE. Fabrication and electrical characterization of silicon nanowire arrays Materials Research Society Symposium Proceedings. 832: 287-292. DOI: 10.1557/Proc-832-F9.10  0.661
2005 Redwing JM, Dilts SM, Lew KK, Cranmer A, Mohney SE. High density group iv semiconductor nanowire arrays fabricated in nanoporous alumina templates Proceedings of Spie - the International Society For Optical Engineering. 6003. DOI: 10.1117/12.632745  0.658
2005 Orgiani P, Cui Y, Pogrebnyakov AV, Redwing JM, Vaithyanathan V, Schlom DG, Xi XX. Investigations of MgB2/MgO and MgB2/AlN heterostructures for Josephson devices Ieee Transactions On Applied Superconductivity. 15: 228-231. DOI: 10.1109/Tasc.2005.849764  0.431
2005 Cui Y, Jones JE, Beckley A, Donovan R, Lishego D, Maertz E, Pogrebnyakov AV, Orgiani P, Redwing JM, Xi XX. Degradation of MgB/sub 2/ thin films in water Ieee Transactions On Applied Superconductivity. 15: 224-227. DOI: 10.1109/Tasc.2005.849763  0.35
2005 Pogrebnyakov A, Redwing J, Giencke J, Eom C, Vaithyanathan V, Schlom D, Soukiassian A, Mi S, Jia C, Chen J, Hu Y, Cui Y, Li Q, Xi X. Carbon-Doped<tex>$rm MgB_2$</tex>Thin Films Grown by Hybrid Physical-Chemical Vapor Deposition Ieee Transactions On Appiled Superconductivity. 15: 3321-3324. DOI: 10.1109/Tasc.2005.848871  0.361
2005 Ye Z, Li Q, Hu Y, Pogrebnyakov A, Cui Y, Xi X, Redwing J, Li Q. Magneto-Optical Imaging Studies of Flux Propagation in Ultra-Pure and Carbon-Doped<tex>$rm MgB_2$</tex>Thin Films Ieee Transactions On Appiled Superconductivity. 15: 3273-3276. DOI: 10.1109/Tasc.2005.848850  0.371
2005 Ferdeghini C, Ferrando V, Tarantini C, Bellingeri E, Grasso G, Malagoli A, Marre D, Putti M, Manfrinetti P, Pogrebnyakov A, Redwing JM, Xi XX, Felici R, Haanappel E. Upper critical fields up to 60 T in dirty magnesium diboride thin films Ieee Transactions On Applied Superconductivity. 15: 3234-3237. DOI: 10.1109/Tasc.2005.848827  0.324
2005 Iavarone M, Capua RD, Koshelev AE, Kwok WK, Chiarella F, Vaglio R, Kang WN, Choi EM, Kim HJ, Lee SI, Pogrebnyakov AV, Redwing JM, Xi XX. Effect of disorder in MgB 2 thin films Physical Review B. 71: 214502. DOI: 10.1103/Physrevb.71.214502  0.327
2005 Braccini V, Gurevich A, Giencke JE, Jewell MC, Eom CB, Larbalestier DC, Pogrebnyakov A, Cui Y, Liu BT, Hu YF, Redwing JM, Li Q, Xi XX, Singh RK, Gandikota R, et al. Erratum: High-field superconductivity in alloyedMgB2thin films [Phys. Rev. B71, 012504 (2005)] Physical Review B. 71. DOI: 10.1103/Physrevb.71.179902  0.313
2005 Tenne DA, Xi XX, Pogrebnyakov AV, Redwing JM. Raman scattering in pure and carbon-doped Mg B2 films Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.132512  0.372
2005 Raghavan S, Weng X, Dickey E, Redwing JM. Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2081128  0.448
2005 Jin B, Kuzel P, Kadlec F, Dahm T, Redwing J, Pogrebnyakov A, Xi X, Klein N. Terahertz surface impedance of epitaxial MgB2 thin film Applied Physics Letters. 87: 92503. DOI: 10.1063/1.2034107  0.38
2005 Gandikota R, Singh RK, Kim J, Wilkens B, Newman N, Rowell JM, Pogrebnyakov AV, Xi XX, Redwing JM, Xu SY, Li Q, Moeckly BH. Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films Applied Physics Letters. 87. DOI: 10.1063/1.2012524  0.336
2005 Raghavan S, Redwing JM. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers Journal of Applied Physics. 98. DOI: 10.1063/1.1978991  0.436
2005 Raghavan S, Acord J, Redwing JM. In situ observation of coalescence-related tensile stresses during metalorganic chemical vapor deposition of GaN on sapphire Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1968436  0.444
2005 Pan L, Lew K, Redwing J, Dickey E. Study on Axial and Radial Heterostructures of Si-Ge and Si-SiGe Nanowires Microscopy and Microanalysis. 11. DOI: 10.1017/S1431927605507505  0.426
2005 Mohney SE, Wang Y, Cabassi MA, Lew KK, Dey S, Redwing JM, Mayer TS. Measuring the specific contact resistance of contacts to semiconductor nanowires Solid-State Electronics. 49: 227-232. DOI: 10.1016/J.Sse.2004.08.006  0.353
2005 Pan L, Lew KK, Redwing JM, Dickey EC. Effect of diborane on the microstructure of boron-doped silicon nanowires Journal of Crystal Growth. 277: 428-436. DOI: 10.1016/J.Jcrysgro.2005.01.091  0.691
2005 Bogart TE, Dey S, Lew KK, Mohney SE, Redwing JM. Diameter-controlled synthesis of silicon nanowires using nanoporous alumina membranes Advanced Materials. 17: 114-117. DOI: 10.1002/Adma.200400373  0.583
2004 Pogrebnyakov AV, Redwing JM, Raghavan S, Vaithyanathan V, Schlom DG, Xu SY, Li Q, Tenne DA, Soukiassian A, Xi XX, Johannes MD, Kasinathan D, Pickett WE, Wu JS, Spence JC. Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening. Physical Review Letters. 93: 147006. PMID 15524834 DOI: 10.1103/Physrevlett.93.147006  0.334
2004 Jin BB, Dahm T, Iniotakis C, Gubin AI, Choi E, Kim HJ, Lee S, Kang WN, Wang SF, Zhou YL, Pogrebnyakov AV, Redwing JM, Xi XX, Klein N. Dependence of penetration depth, microwave surface resistance and energy gap of MgB2 thin films on their normal-state resistivity Superconductor Science and Technology. 18: L1-L4. DOI: 10.1088/0953-2048/18/1/L01  0.336
2004 Xi XX, Pogrebnyakov AV, Zeng XH, Redwing JM, Xu SY, Li Q, Liu Z, Lettieri J, Vaithyanathan V, Schlom DG, Christen HM, Zhai HY, Goyal A. Progress in the deposition of MgB2thin films Superconductor Science and Technology. 17: S196-S201. DOI: 10.1088/0953-2048/17/5/021  0.38
2004 Ye ZX, Li Q, Hu YF, Pogrebnyakov AV, Cui Y, Xi XX, Redwing JM, Li Q. Electron scattering dependence of dendritic magnetic instability in superconducting MgB2 films Applied Physics Letters. 85: 5284-5286. DOI: 10.1063/1.1827931  0.34
2004 Lew KK, Pan L, Bogart TE, Dilts SM, Dickey EC, Redwing JM, Wang Y, Cabassi M, Mayer TS, Novak SW. Structural and electrical properties of trimethylboron-doped silicon nanowires Applied Physics Letters. 85: 3101-3103. DOI: 10.1063/1.1792800  0.648
2004 Pogrebnyakov AV, Xi XX, Redwing JM, Vaithyanathan V, Schlom DG, Soukiassian A, Mi SB, Jia CL, Giencke JE, Eom CB, Chen J, Hu YF, Cui Y, Li Q. Properties of MgB2 thin films with carbon doping Applied Physics Letters. 85: 2017-2019. DOI: 10.1063/1.1782258  0.367
2004 Wu JS, Jiang N, Jiang B, Spence JCH, Pogrebnyakov AV, Redwing JM, Xi XX. Interface structures in MgB 2 thin films on (0001) SiC Applied Physics Letters. 85: 1155-1157. DOI: 10.1063/1.1779338  0.452
2004 Raghavan S, Redwing JM. Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Sl substrates Journal of Applied Physics. 96: 2995-3003. DOI: 10.1063/1.1777812  0.484
2004 Shinde SR, Ogale SB, Higgins J, Choudhary RJ, Kulkarni VN, Venkatesan T, Zheng H, Ramesh R, Pogrebnyakov AV, Xu SY, Li Q, Xi XX, Redwing JM, Kanjilal D. Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions Applied Physics Letters. 84: 2352-2354. DOI: 10.1063/1.1687982  0.333
2004 Xiong Q, Chen G, Acord JD, Liu X, Zengel JJ, Gutierrez HR, Redwing JM, Lew Yan Voon LC, Lassen B, Eklund PC. Optical Properties of Rectangular Cross-sectional ZnS Nanowires Nano Letters. 4: 1663-1668. DOI: 10.1021/Nl049169R  0.323
2004 Dickey EC, Pan L, Lew KK, Redwing JM. Development of doped and heterostructured Si-Ge nanowires Microscopy and Microanalysis. 10: 22-23. DOI: 10.1017/S143192760488574X  0.656
2004 Acord JD, Raghavan S, Snyder DW, Redwing JM. In situ stress measurements during MOCVD growth of AlGaN on SiC Journal of Crystal Growth. 272: 65-71. DOI: 10.1016/J.Jcrysgro.2004.08.033  0.429
2004 Jain A, Raghavan S, Redwing JM. Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates Journal of Crystal Growth. 269: 128-133. DOI: 10.1016/J.Jcrysgro.2004.05.042  0.462
2004 Raghavan S, Redwing JM. In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates Journal of Crystal Growth. 261: 294-300. DOI: 10.1016/J.Jcrysgro.2003.11.020  0.494
2003 Dierolf V, Svitelskiy O, Cargill GS, Nikiforov AY, Redwing J, Acord J. Confocal Photoluminescence and Cathodoluminescence Studies of AlGaN Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.64  0.338
2003 Jain A, Redwing JM. Study of the growth mechanism and properties of InN films grown by MOCVD Materials Research Society Symposium - Proceedings. 798: 225-230. DOI: 10.1557/Proc-798-Y12.8  0.459
2003 Mohammad AM, Dey S, Lew KK, Redwing JM, Mohney SE. Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1598966  0.666
2003 Xi XX, Zeng XH, Pogrebnyakov AV, Xu SY, Li Q, Zhong Y, Brubaker CO, Liu Z, Lysczek EM, Redwing JM, Lettieri J, Schlom DG, Tian W, Pan XQ. In situ growth of MgB/sub 2/ thin films by hybrid physical-chemical vapor deposition Ieee Transactions On Applied Superconductivity. 13: 3233-3237. DOI: 10.1109/Tasc.2003.812209  0.426
2003 Xu SY, Li Q, Wertz E, Hu YF, Pogrebnyakov AV, Zeng XH, Xi XX, Redwing JM. High critical current density and vortex pinning of epitaxialMgB2thin films Physical Review B. 68: 224501. DOI: 10.1103/Physrevb.68.224501  0.31
2003 Rowell JM, Xu SY, Zeng XH, Pogrebnyakov AV, Li Q, Xi XX, Redwing JM, Tian W, Pan X. Critical current density and resistivity of MgB2 films Applied Physics Letters. 83: 102-104. DOI: 10.1063/1.1590734  0.337
2003 Pogrebnyakov AV, Redwing JM, Jones JE, Xi XX, Xu SY, Li Q, Vaithyanathan V, Schlom DG. Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters. 82: 4319-4321. DOI: 10.1063/1.1583852  0.412
2003 Rickert KA, Ellis AB, Himpsel FJ, Lu H, Schaff W, Redwing JM, Dwikusuma F, Kuech TF. X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN Applied Physics Letters. 82: 3254-3256. DOI: 10.1063/1.1573351  0.788
2003 Zeng XH, Pogrebnyakov AV, Zhu MH, Jones JE, Xi XX, Xu SY, Wertz E, Li Q, Redwing JM, Lettieri J, Vaithyanathan V, Schlom DG, Liu Z, Trithaveesak O, Schubert J. Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition Applied Physics Letters. 82: 2097-2099. DOI: 10.1063/1.1563840  0.458
2003 Xi XX, Zeng XH, Pogrebnyakov AV, Soukiassian A, Xu SY, Hu YF, Wertz E, Li Q, Zhong Y, Brubaker CO, Liu Z-, Lysczek EM, Redwing JM, Lettieri J, Schlom DG, et al. Deposition and properties of superconducting MgB2 thin films Journal of Superconductivity. 16: 801-806. DOI: 10.1023/A:1026294632677  0.417
2003 Lew KK, Redwing JM. Growth characteristics of silicon nanowires synthesized by vapor-liquid-solid growth in nanoporous alumina templates Journal of Crystal Growth. 254: 14-22. DOI: 10.1016/S0022-0248(03)01146-1  0.676
2003 Lew KK, Pan L, Dickey EC, Redwing JM. Vapor-Liquid-Solid Growth of Silicon-Germanium Nanowires Advanced Materials. 15: 2073-2076. DOI: 10.1002/Adma.200306035  0.669
2002 Zeng X, Pogrebnyakov AV, Kotcharov A, Jones JE, Xi XX, Lysczek EM, Redwing JM, Xu S, Li Q, Lettieri J, Schlom DG, Tian W, Pan X, Liu ZK. In situ epitaxial MgB2 thin films for superconducting electronics. Nature Materials. 1: 35-8. PMID 12618845 DOI: 10.1038/Nmat703  0.405
2002 Lew KK, Reuther C, Carim AH, Redwing JM, Martin BR. Template-directed vapor-liquid-solid growth of silicon nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 389-392. DOI: 10.1116/1.1430240  0.675
2001 Schaadt DM, Miller EJ, Yu ET, Redwing JM. Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1671-1674. DOI: 10.1116/1.1385914  0.306
2001 Zhang AP, Johnson JW, Ren F, Han J, Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM, Lee KP, Pearton SJ. Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage Applied Physics Letters. 78: 823-825. DOI: 10.1063/1.1346622  0.346
2001 Schaadt DM, Miller EJ, Yu ET, Redwing JM. Lateral variations in threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy Applied Physics Letters. 78: 88-90. DOI: 10.1063/1.1335840  0.312
2001 Carim AH, Lew KK, Redwing JM. Bicrystalline silicon nanowires Advanced Materials. 13: 1489-1491. DOI: 10.1002/1521-4095(200110)13:19<1489::Aid-Adma1489>3.0.Co;2-E  0.416
2000 Wang SP, Powell AR, Redwing JM, Piner E, Saxler AW. Generation and Properties of Semi-Insulating SiC Substrates Materials Science Forum. 17-20. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.17  0.362
2000 Piner EL, Keogh DM, Flynn JS, Redwing JM. AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S109257830000449X  0.44
2000 Kuech T, Gu S, Wate R, Zhang L, Sun J, Dumesic J, Redwing J. The Chemistry of GaN Growth Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G1.1  0.645
2000 Stocker DA, Goepfert ID, Schubert EF, Boutros KS, Redwing JM. Crystallographic wet chemical etching of p-type GaN Journal of the Electrochemical Society. 147: 763-764. DOI: 10.1149/1.1393267  0.363
2000 Smith KV, Dang XZ, Yu ET, Redwing JM. Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2304-2308. DOI: 10.1116/1.1303738  0.329
2000 Miller EJ, Dang XZ, Wieder HH, Asbeck PM, Yu ET, Sullivan GJ, Redwing JM. Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor Journal of Applied Physics. 87: 8070-8073. DOI: 10.1063/1.373499  0.344
2000 Qiao D, Yu LS, Lau SS, Redwing JM, Lin JY, Jiang HX. Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction Journal of Applied Physics. 87: 801-804. DOI: 10.1063/1.371944  0.319
2000 Hashizume T, Alekseev E, Pavlidis D, Boutros KS, Redwing J. Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition Journal of Applied Physics. 88: 1983-1986. DOI: 10.1063/1.1303722  0.458
2000 Zhang AP, Dang G, Ren F, Han J, Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM, Cho H, Pearton SJ. Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers Applied Physics Letters. 76: 3816-3818. DOI: 10.1063/1.126791  0.343
2000 Zhang AP, Dang G, Ren F, Han J, Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM, Cao XA, Pearton SJ. Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers Applied Physics Letters. 76: 1767-1769. DOI: 10.1063/1.126161  0.368
2000 Sun J, Rickert KA, Redwing JM, Ellis AB, Himpsel FJ, Kuech TF. p-GaN surface treatments for metal contacts Applied Physics Letters. 76: 415-417. DOI: 10.1063/1.125772  0.594
2000 Vescan A, Dietrich R, Wieszt A, Schurr A, Leier H, Piner EL, Redwing JM. AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz Electronics Letters. 36: 1234-1236. DOI: 10.1049/El:20000898  0.335
2000 Sun J, Redwing JM, Kuech TF. Model development of GaN MOVPE growth chemistry for reactor design Journal of Electronic Materials. 29: 2-9. DOI: 10.1007/S11664-000-0085-5  0.625
2000 Piner EL, Keogh DM, Flynn JS, Redwing JM. AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties Materials Research Society Symposium - Proceedings. 595.  0.329
1999 Stocker DA, Schubert EF, Boutros KS, Redwing JM. Fabrication of smooth GaN-based laser facets Materials Research Society Symposium - Proceedings. 537. DOI: 10.1557/S1092578300003446  0.392
1999 Fung AK, Cai C, Ruden PP, Nathan MI, Chen MY, McDermott BT, Sullivan GJ, Hove JMV, Boutros K, Redwing J, Yange JW, Chene Q, Khane MA, Schaff W, Murphy M. Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-A1GaN/GaN heterostructures grown on sapphire substrates Mrs Proceedings. 572. DOI: 10.1557/Proc-572-495  0.365
1999 Sullivan G, Gertner E, Pittman R, Chen M, Pierson R, Higgins A, Chen Q, Yang J, Smith RP, Perez R, Khan A, Redwing J, McDermott B. AlGaN Microwave Power HFETs on Insulating SiC Substrates Mrs Proceedings. 572: 471. DOI: 10.1557/Proc-572-471  0.308
1999 Sun J, Redwing JM, Kuech TF. Comparative study of GaN growth process by MOVPE Materials Research Society Symposium - Proceedings. 572: 463-468. DOI: 10.1557/Proc-572-463  0.616
1999 Moran PD, Hansen DM, Matyi RJ, Redwing JM, Kuech TF. Realization and characterization of ultrathin GaAs-on-insulator structures Journal of the Electrochemical Society. 146: 3506-3509. DOI: 10.1149/1.1392505  0.545
1999 Li R, Cai J, Wong L, Chen Y, Wang KL, Smith RP, Martin SC, Boutros KS, Redwing JM. Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz Ieee Electron Device Letters. 20: 323-325. DOI: 10.1109/55.772364  0.349
1999 Smith KV, Yu ET, Redwing JM, Boutros KS. Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures Applied Physics Letters. 75: 2250-2252. DOI: 10.1063/1.124980  0.355
1999 Smith GM, Redwing JM, Vaudo RP, Ross EM, Flynn JS, Phanse VM. Substrate effects on GaN photoconductive detector performance Applied Physics Letters. 75: 25-27. DOI: 10.1063/1.124265  0.441
1999 Dang XZ, Asbeck PM, Yu ET, Sullivan GJ, Chen MY, McDermott BT, Boutros KS, Redwing JM. Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor Applied Physics Letters. 74: 3890-3892. DOI: 10.1063/1.124214  0.335
1999 Bandić ZZ, Bridger PM, Piquette EC, McGill TC, Vaudo RP, Phanse VM, Redwing JM. High voltage (450 V) GaN Schottky rectifiers Applied Physics Letters. 74: 1266-1268. DOI: 10.1063/1.123520  0.347
1999 Ping A, Selvanathan D, Youtsey C, Piner E, Redwing J, Adesida I. Gate recessing of GaN MESFETs using photoelectrochemical wet etching Electronics Letters. 35: 2140. DOI: 10.1049/El:19991341  0.356
1999 Zhou L, Ping A, Boutros K, Redwing J, Adesida I. Characterisation of rhenium Schottky contacts on n-type AlxGa1–xN Electronics Letters. 35: 745. DOI: 10.1049/El:19990489  0.331
1999 Dang XZ, Welty RJ, Qiao D, Asbeck PM, Lau SS, Yu ET, Boutros KS, Redwing JM. Fabrication and characterization of enhanced barrier AlGaN/GaN HFET Electronics Letters. 35: 602-603. DOI: 10.1049/El:19990282  0.367
1999 Smith KV, Yuf ET, Redwing JM, Boutros KS. Local electronic structure of AlGaN/GaN heterostructures probed by scanning capacitance microscopy Journal of Electronic Materials. 28: 1027. DOI: 10.1007/S11664-000-0062-Z  0.361
1999 Sun J, Redwing JM, Kuech TF. Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride Physica Status Solidi (a) Applied Research. 176: 693-698. DOI: 10.1002/(Sici)1521-396X(199911)176:1<693::Aid-Pssa693>3.0.Co;2-Z  0.624
1999 Dietrich R, Vescan A, Wieszt A, Leier H, Boutros KS, Redwing JM, Kornitzer K, Freitag R, Ebner T, Thonke K. Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs Physica Status Solidi (a). 176: 209-212. DOI: 10.1002/(Sici)1521-396X(199911)176:1<209::Aid-Pssa209>3.0.Co;2-Q  0.31
1998 Polyakov AY, Smirnov NB, Govorkov AV, Greve DW, Skowronski M, Shin M, Redwing JM. Schottky diodes on MOCVD grown AlGaN films Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300001095  0.425
1998 Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM. Persistent photoconductivity in AlGaN films Grown by mocvd Mrs Proceedings. 512: 537. DOI: 10.1557/Proc-512-537  0.423
1998 Bandić ZZ, Bridger PM, Piquette EC, Beach RA, Phanse VM, Vaudo RP, Redwing J, McGill TC. Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals Mrs Proceedings. 512. DOI: 10.1557/Proc-512-27  0.378
1998 Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM. Deep Levels In High Resistivity AlGaN Films Grown By MOCVD Mrs Proceedings. 512. DOI: 10.1557/Proc-512-239  0.352
1998 Stocker D, Schubert EF, Grieshaber W, Boutros KS, Flynn JS, Vaudo RP, Phanse VM, Redwing JM. InGaN/GaN double heterostructure laser with cleaved facets Proceedings of Spie - the International Society For Optical Engineering. 3284: 122-127. DOI: 10.1117/12.304461  0.337
1998 Schubert EF, Grieshaber W, Boutros KS, Redwing JM. Yellow photoluminescence in MOCVD-grown n-type GaN Proceedings of Spie - the International Society For Optical Engineering. 3279: 59-68. DOI: 10.1117/12.304430  0.33
1998 Smith GM, Boutros KS, Szewczuk JW, Flynn JS, Phanse VM, Vaudo RP, Redwing JM. InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates Proceedings of Spie - the International Society For Optical Engineering. 3279: 8-16. DOI: 10.1117/12.304424  0.45
1998 Liu QZ, Yu LS, Deng F, Lau SS, Redwing JM. Ni and Ni silicide Schottky contacts on n-GaN Journal of Applied Physics. 84: 881-886. DOI: 10.1063/1.368151  0.375
1998 Yu LS, Xing QJ, Qiao D, Lau SS, Boutros KS, Redwing JM. Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure Applied Physics Letters. 73: 3917-3919. DOI: 10.1063/1.122935  0.337
1998 Stocker DA, Schubert EF, Redwing JM. Crystallographic wet chemical etching of GaN Applied Physics Letters. 73: 2654-2656. DOI: 10.1063/1.122543  0.381
1998 Yu ET, Dang XZ, Yu LS, Qiao D, Asbeck PM, Lau SS, Sullivan GJ, Boutros KS, Redwing JM. Schottky barrier engineering in III-V nitrides via the piezoelectric effect Applied Physics Letters. 73: 1880-1882. DOI: 10.1063/1.122312  0.367
1998 Dang XZ, Wang CD, Yu ET, Boutros KS, Redwing JM. Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures Applied Physics Letters. 72: 2745-2747. DOI: 10.1063/1.121077  0.321
1998 Stocker D, Schubert EF, Boutros KS, Flynn JS, Vaudo RP, Phanse VM, Redwing JM. Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets Electronics Letters. 34: 373-375. DOI: 10.1049/El:19980323  0.332
1998 Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM. Deep traps in high resistivity AlGaN films Solid-State Electronics. 42: 831-838. DOI: 10.1016/S0038-1101(98)00089-6  0.407
1998 Polyakov AY, Govorkov AV, Smirnov NB, Mil'vidskii MG, Redwing JM, Shin M, Skowronski M, Greve DW. Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy Solid-State Electronics. 42: 637-646. DOI: 10.1016/S0038-1101(97)00278-5  0.422
1998 Polyakov AY, Smirnov NB, Govorkov AV, Mil'vidskii MG, Redwing JM, Shin M, Skowronski M, Greve DW, Wilson RG. Properties of Si donors and persistent photoconductivity in AlGaN Solid-State Electronics. 42: 627-635. DOI: 10.1016/S0038-1101(97)00277-3  0.457
1997 Goepfert ID, Schubert EF, Redwing JM. Luminescence properties of Si-doped GaN and evidence of compensating defects as the origin of the yellow luminescence Materials Research Society Symposium - Proceedings. 482: 679-684. DOI: 10.1557/Proc-482-679  0.375
1997 Dunn KA, Babcock SE, Vaudo R, Phanse V, Redwing J. Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE Mrs Proceedings. 482. DOI: 10.1557/Proc-482-417  0.428
1997 Boutros KS, Flynn JS, Phanse V, Vaudo RP, Smith GM, Redwing JM, Tolliver TR, Anderson NG. InGaN double-heterostructures and DH-LEDS on HVPE GaN-on-sapphire substrates Materials Research Society Symposium - Proceedings. 482: 1047-1052. DOI: 10.1557/Proc-482-1047  0.475
1997 Venugopalan HS, Mohney SE, Luther BP, Delucca JM, Wolter SD, Redwing JM, Bulman GE. Phase formation and morphology in nickel and nickel/gold contacts to gallium nitride Materials Research Society Symposium - Proceedings. 468: 431-436. DOI: 10.1557/Proc-468-431  0.401
1997 Safvi SA, Redwing JM, Tischler MA, Kuech TF. GaN growth by metallorganic vapor phase epitaxy: A comparison of modeling and experimental measurements Journal of the Electrochemical Society. 144: 1789-1796. DOI: 10.1149/1.1837681  0.542
1997 Culp TD, Hömmerich U, Redwing JM, Kuech TF, Bray KL. Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure Journal of Applied Physics. 82: 368-374. DOI: 10.1063/1.365821  0.506
1997 Venugopalan HS, Mohney SE, Luther BP, Wolter SD, Redwing JM. Interfacial reactions between nickel thin films and GaN Journal of Applied Physics. 82: 650-654. DOI: 10.1063/1.365593  0.385
1997 Schubert EF, Goepfert ID, Redwing JM. Evidence of compensating centers as origin of yellow luminescence in GaN Applied Physics Letters. 71: 3224-3226. DOI: 10.1063/1.120297  0.332
1997 Schubert EF, Goepfert ID, Grieshaber W, Redwing JM. Optical properties of Si-doped GaN Applied Physics Letters. 71: 921-923. DOI: 10.1063/1.119689  0.375
1997 Liu QZ, Yu LS, Lau SS, Redwing JM, Perkins NR, Kuech TF. Thermally Stable Ptsi Schottky Contact On N-Gan Applied Physics Letters. 70: 1275-1277. DOI: 10.1063/1.118551  0.553
1997 Asbeck PM, Yu ET, Lau SS, Sullivan GJ, Hove JV, Redwing J. Piezoelectric charge densities in AlGaN/GaN HFETs Electronics Letters. 33: 1230-1231. DOI: 10.1049/El:19970843  0.322
1997 Binari SC, Redwing JM, Kelner G, Kruppa W. AlGaN/GaN HEMTs grown on SiC substrates Electronics Letters. 33: 242-243. DOI: 10.1049/El:19970122  0.342
1997 Liu J, Zhi D, Redwing JM, Tischler MA, Kuech TF. GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction Journal of Crystal Growth. 170: 357-361. DOI: 10.1016/S0022-0248(96)00588-X  0.535
1996 Safvi SA, Redwing JM, Thon A, Flynn JS, Tischler MA, Kuech TF. MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization Mrs Proceedings. 449: 101. DOI: 10.1557/Proc-449-101  0.537
1996 Redwing JM, Flynn JS, Tischler MA, Mitchel W, Saxler A. MOVPE growth of high electron mobility AlGaN/GaN heterostructures Materials Research Society Symposium - Proceedings. 395: 201-206. DOI: 10.1557/Proc-395-201  0.404
1996 Deng F, Liu QZ, Yu LS, Guan ZF, Lau SS, Redwing JM, Geisz J, Kuech TF. Strain‐induced band‐gap modulation in GaAs/AlGaAs quantum‐well structure using thin‐film stressors Journal of Applied Physics. 79: 1763-1771. DOI: 10.1063/1.360966  0.498
1996 Redwing JM, Loeber DAS, Anderson NG, Tischler MA, Flynn JS. An optically pumped GaN-AlGaN vertical cavity surface emitting laser Applied Physics Letters. 69: 1-3. DOI: 10.1063/1.118104  0.305
1996 Liu J, Perkins NR, Horton MN, Redwing JM, Tischler MA, Kuech TF. A near‐field scanning optical microscopy study of the photoluminescence from GaN films Applied Physics Letters. 69: 3519-3521. DOI: 10.1063/1.117231  0.59
1996 Redwing JM, Tischler MA, Flynn JS, Elhamri S, Ahoujja M, Newrock RS, Mitchel WC. Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates Applied Physics Letters. 69: 963-965. DOI: 10.1063/1.117096  0.408
1996 Nayak S, Huang JW, Redwing JM, Savage DE, Lagally MG, Kuech TF. Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001) Applied Physics Letters. 68: 1270-1272. DOI: 10.1063/1.115949  0.515
1996 Safvi SA, Redwing JM, Tischler MA, Kuech TF. Modeling study of GaN growth by MOVPE Materials Research Society Symposium - Proceedings. 395: 255-260.  0.467
1996 Liu J, Perkins NR, Horton MN, Redwing JM, Tischler MA, Kuech TF. A near-field scanning optical microscopy study of the photoluminescence from GaN films Applied Physics Letters. 69: 3519-3521.  0.34
1995 Safvi SA, Redwing JM, Tischler MA, Kuech TF. A modeling study of GaN growth by MOVPE Mrs Proceedings. 395: 255. DOI: 10.1557/Proc-395-255  0.531
1995 Gaines D, Hop M, Kuech T, Redwing J, Saulys D, Thon A. New Si CVD precursors: preparation and pre-screening Materials Research Society Symposium - Proceedings. 377: 81-86. DOI: 10.1557/Proc-377-81  0.575
1995 Kocha SS, Peterson MW, Arent DJ, Redwing JM, Tischler MA, Turner JA. Electrochemical Investigation of the Gallium Nitride‐Aqueous Electrolyte Interface Journal of the Electrochemical Society. 142. DOI: 10.1149/1.2048511  0.302
1995 Liu QZ, Deng F, Yu LS, Guan ZF, Pappert SA, Yu PKL, Lau SS, Redwing JM, Kuech TF. Photoelastic waveguides and the controlled introduction of strain in III‐V semiconductors by means of thin film technology Journal of Applied Physics. 78: 236-244. DOI: 10.1063/1.360657  0.535
1995 Nayak S, Redwing JM, Huang JW, Lagally MG, Kuech TF. Influence of impurities on mechanisms of growth in MOVPE GaAs Materials Research Society Symposium - Proceedings. 367: 293-298.  0.387
1994 Nayak S, Redwing J, Huang J, Lagally M, Kuech T. Influence of Impurities On Mechanisms of Growth in Movpe GaAs Mrs Proceedings. 367. DOI: 10.1557/Proc-367-293  0.617
1994 Nayak S, Redwing J, Kuech T, Savage D, Lagally M. Interfacial Roughness in GaAs/A1GaAs Multilayers: Influence of Controlled Impurity Addition Mrs Proceedings. 332. DOI: 10.1557/Proc-332-249  0.507
1994 Redwing JM, Kuech TF, Gordon DC, Vaartstra BA, Lau SS. Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources Journal of Applied Physics. 76: 1585-1591. DOI: 10.1063/1.357737  0.578
1994 Redwing JM, Nayak S, Savage DE, Lagally MG, Dawson-Elli DF, Kuech TF. The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy Journal of Crystal Growth. 145: 792-798. DOI: 10.1016/0022-0248(94)91144-4  0.546
1994 Redwing JM, Simka H, Jensen KF, Kuech TF. Study of silicon incorporation from SiH4 in GaAs layers grown by metalorganic vapor phase epitaxy using tertiarybutylarsine Journal of Crystal Growth. 145: 397-402. DOI: 10.1016/0022-0248(94)91082-0  0.637
1994 Kuech TF, Redwing JM. Carbon doping in metalorganic vapor phase epitaxy Journal of Crystal Growth. 145: 382-389. DOI: 10.1016/0022-0248(94)91080-4  0.492
1994 Redwing JM, Kuech TF, Saulys D, Gaines DF. Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source Journal of Crystal Growth. 135: 423-433. DOI: 10.1016/0022-0248(94)90130-9  0.595
1993 Redwing J, Kuech T, Simka H, Jensen K. Study of Silicon Incorporation in GaAs Movpe Layers Grown With Tertiarybutylarsine Mrs Proceedings. 334. DOI: 10.1557/Proc-334-201  0.629
1993 Kuech TF, Redwing JM, Huang J, Nayak S. Controlled Impurity Introduction In CVD: Chemical, Electrical, and Morphological Influences Mrs Proceedings. 334. DOI: 10.1557/Proc-334-189  0.514
1993 Yu LS, Guan ZF, Deng F, Liu QZ, Pappert SA, Yu PKL, Lau SS, Redwing J, Geisz J, Kuech TF, Kattelus H, Suni I. Photoelastic Waveguides Formed by Interfacial Reactions on Semiconductor Heterostructures Mrs Proceedings. 326: 251. DOI: 10.1557/Proc-326-251  0.561
1993 Nayak S, Redwing JM, Kuech TF, Phang Y, Savage DE, Lagally MG. X-Ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers Mrs Proceedings. 312. DOI: 10.1557/Proc-312-137  0.504
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