| Year |
Citation |
Score |
| 2024 |
Sartor BE, Zhang T, Muzzillo CP, Lee C, Muzzio R, Gogotsi Y, Reese MO, Taylor AD. Hierarchical Transparent Back Contacts for Bifacial CdTe PV. Acs Energy Letters. 9: 1617-1623. PMID 38633996 DOI: 10.1021/acsenergylett.4c00156 |
0.314 |
|
| 2007 |
Ganguly U, Lee C, Hou TH, Kan EC. Enhanced electrostatics for low-voltage operations in nanocrystal based nanotube/nanowire memories Ieee Transactions On Nanotechnology. 6: 22-28. DOI: 10.1109/Tnano.2006.888529 |
0.784 |
|
| 2006 |
Hou TH, Lee C, Narayanan V, Ganguly U, Kan EC. Design optimization of metal nanocrystal memory - Part II: Gate-stack engineering Ieee Transactions On Electron Devices. 53: 3103-3108. DOI: 10.1109/Ted.2006.885678 |
0.786 |
|
| 2006 |
Hou TH, Lee C, Narayanan V, Ganguly U, Kan EC. Design optimization of metal nanocrystal memory - Part I: Nanocrystal array engineering Ieee Transactions On Electron Devices. 53: 3095-3102. DOI: 10.1109/Ted.2006.885677 |
0.784 |
|
| 2006 |
Ganguly U, Narayanan V, Lee C, Hou TH, Kan EC. Three-dimensional analytical modeling of nanocrystal memory electrostatics Journal of Applied Physics. 99. DOI: 10.1063/1.2202695 |
0.739 |
|
| 2006 |
Kim J, Ni W, Lee C, Kan EC, Hosein ID, Song Y, Liddell C. Magnetic property characterization of magnetite (Fe 3 O 4) nanorod cores for integrated solenoid rf inductors Journal of Applied Physics. 99. DOI: 10.1063/1.2165143 |
0.627 |
|
| 2005 |
Ganguly U, Lee C, Kan EC. Experimental observation of non-volatile charge injection and molecular redox in fullerenes C 60 and C 70 in an EEPROM-type device Materials Research Society Symposium Proceedings. 830: 355-361. DOI: 10.1557/Proc-830-D7.5 |
0.712 |
|
| 2005 |
Lee C, Ganguly U, Kan EC. Characterization of number fluctuations in gate-last metal nanocrystal nonvolatile memory array beyond 90nm CMOS technology Materials Research Society Symposium Proceedings. 830: 223-228. DOI: 10.1557/Proc-830-D5.4 |
0.743 |
|
| 2005 |
Lee C, Hou T, Kan EC-. Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate Ieee Transactions On Electron Devices. 52: 2697-2702. DOI: 10.1109/Ted.2005.859615 |
0.713 |
|
| 2005 |
Kim M, Shen NY-, Lee C, Kan EC. Fast and sensitive electret polymer characterization by extended floating gate MOSFET Ieee Transactions On Dielectrics and Electrical Insulation. 12: 1082-1087. DOI: 10.1109/Tdei.2005.1522200 |
0.659 |
|
| 2005 |
Lee C, Ganguly U, Narayanan V, Hou TH, Kim J, Kan EC. Asymmetric electric field enhancement in nanocrystal memories Ieee Electron Device Letters. 26: 879-881. DOI: 10.1109/Led.2005.859634 |
0.795 |
|
| 2005 |
Lee C, Meteer J, Narayanan V, Kan EC. Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications Journal of Electronic Materials. 34: 1-11. DOI: 10.1007/S11664-005-0172-8 |
0.695 |
|
| 2003 |
Gorur-Seetharam A, Lee C, Kan EC. The effect of gate geometry on the charging characteristics of metal nanocrystal memories Materials Research Society Symposium - Proceedings. 789: 71-76. DOI: 10.1557/Proc-789-N3.28 |
0.697 |
|
| 2003 |
Ganguly U, Lee C, Kan EC. Integration of fullerenes and carbon nanotubes with aggressively scaled CMOS gate stacks Materials Research Society Symposium - Proceedings. 789: 403-408. DOI: 10.1557/Proc-789-N16.3 |
0.684 |
|
| 2003 |
Lee C, Liu Z, Kan EC. Investigation on process dependence of self-assembled metal nanocrystals Materials Research Society Symposium - Proceedings. 737: 691-696. DOI: 10.1557/Proc-737-F8.18 |
0.757 |
|
| 2003 |
Shen NYM, Liu Z, Lee C, Minch BA, Kan ECC. Charge-based chemical sensors: A neuromorphic approach with chemoreceptive neuron MOS (CνMOS) transistors Ieee Transactions On Electron Devices. 50: 2171-2178. DOI: 10.1109/Ted.2003.816905 |
0.588 |
|
| 2003 |
Liu Z, Lee C, Narayanan V, Pei G, Kan EC. A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage Ieee Electron Device Letters. 24: 345-347. DOI: 10.1109/Led.2003.812528 |
0.719 |
|
| 2002 |
Liu Z, Lee C, Pei G, Narayanan V, Kan EC. Eluding metal contamination in CMOS front-end fabrication by nanocrystal formation process Materials Research Society Symposium - Proceedings. 707: 199-204. DOI: 10.1557/Proc-707-A5.3 |
0.747 |
|
| 2002 |
Liu Z, Lee C, Narayanan V, Pei G, Kan EC. Metal nanocrystal memories - Part II: Electrical characteristics Ieee Transactions On Electron Devices. 49: 1614-1622. DOI: 10.1109/Ted.2002.802618 |
0.782 |
|
| 2002 |
Liu Z, Lee C, Narayanan V, Pei G, Kan EC. Metal nanocrystal memories - Part I: Device design and fabrication Ieee Transactions On Electron Devices. 49: 1606-1613. DOI: 10.1109/Ted.2002.802617 |
0.773 |
|
| 1999 |
Lee C. Etch pit formation on metal films by wet chemicals Metals and Materials International. 5: 39-42. |
0.301 |
|
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