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Shantanu R. Rajwade, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering Cornell University, Ithaca, NY, United States 
Area:
Electronics and Electrical Engineering, Computer Engineering, Materials Science Engineering
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15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Auluck K, Kan EC, Rajwade SR. A unified circuit model for ferroelectrics International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 149-152. DOI: 10.1109/SISPAD.2014.6931585  0.594
2013 Jayant K, Auluck K, Funke M, Anwar S, Phelps JB, Gordon PH, Rajwade SR, Kan EC. Programmable ion-sensitive transistor interfaces. II. Biomolecular sensing and manipulation. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 88: 012802. PMID 23944513 DOI: 10.1103/Physreve.88.012802  0.613
2013 Jayant K, Auluck K, Funke M, Anwar S, Phelps JB, Gordon PH, Rajwade SR, Kan EC. Programmable ion-sensitive transistor interfaces. I. Electrochemical gating. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 88: 012801. PMID 23944512 DOI: 10.1103/Physreve.88.012801  0.627
2013 Rajwade SR, Auluck K, Naoi TA, Jayant K, Kan EC. Dynamic modeling of dual speed ferroelectric and charge hybrid memory Ieee Transactions On Electron Devices. 60: 3378-3384. DOI: 10.1109/Ted.2013.2279259  0.747
2013 Rajwade SR, Naoi TA, Auluck K, Jayant K, Van Dover RB, Kan EC. Ferroelectric-assisted dual-switching speed DRAM-flash hybrid memory Ieee Transactions On Electron Devices. 60: 1944-1950. DOI: 10.1109/Ted.2013.2257787  0.76
2013 Rajwade SR, Auluck K, Jayant K, Kan EC, Naoi TA, Van Dover RB. Towards DRAM-Flash hybrid: Dual-speed low-voltage ferroelectric and charge memory 2013 5th Ieee International Memory Workshop, Imw 2013. 166-169. DOI: 10.1109/IMW.2013.6582125  0.75
2013 Auluck K, Rajwade SR, Kan EC. Design considerations for FE-charge DRAM-Flash hybrid memory Device Research Conference - Conference Digest, Drc. 177-178. DOI: 10.1109/DRC.2013.6633851  0.697
2012 Shaw J, Xu Q, Rajwade S, Hou TH, Kan EC. Redox molecules for a resonant tunneling barrier in nonvolatile memory Ieee Transactions On Electron Devices. 59: 1189-1198. DOI: 10.1109/Ted.2012.2184797  0.727
2012 Rajwade SR, Auluck K, Phelps JB, Lyon KG, Shaw JT, Kan EC. A ferroelectric and charge hybrid nonvolatile memory - Part II: Experimental validation and analysis Ieee Transactions On Electron Devices. 59: 450-458. DOI: 10.1109/Ted.2011.2175397  0.733
2012 Rajwade SR, Auluck K, Phelps JB, Lyon KG, Shaw JT, Kan EC. A ferroelectric and charge hybrid nonvolatile memory - Part I: Device concept and modeling Ieee Transactions On Electron Devices. 59: 441-449. DOI: 10.1109/Ted.2011.2175396  0.733
2012 Auluck K, Rajwade S, Kan EC. Switching dynamics in ferroelectric-charge hybrid nonvolatile memory Device Research Conference - Conference Digest, Drc. 133-134. DOI: 10.1109/DRC.2012.6257000  0.729
2012 Shaw JT, Tseng HW, Rajwade S, Tung LT, Buhrman RA, Kan EC. Interface and oxide quality of CoFeB/MgO/Si tunnel junctions Journal of Applied Physics. 111. DOI: 10.1063/1.4709766  0.561
2011 Shaw J, Zhong YW, Hughes KJ, Hou TH, Raza H, Rajwade S, Bellfy J, Engstrom JR, Abruña HD, Kan EC. Integration of self-assembled redox molecules in flash memory devices Ieee Transactions On Electron Devices. 58: 826-834. DOI: 10.1109/Ted.2010.2097266  0.757
2011 Rajwade SR, Auluck K, Shaw J, Lyon K, Kan EC. A hybrid ferroelectric and charge nonvolatile memory Device Research Conference - Conference Digest, Drc. 169-170. DOI: 10.1109/DRC.2011.5994474  0.72
2009 Rajwade S, Arora H, Shaw J, Wiesner U, Kan EC. "Nothing" can be better: Study of porosity in the charge trap layer of flash memory Device Research Conference - Conference Digest, Drc. 235-236. DOI: 10.1109/DRC.2009.5354971  0.687
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