Xiaomu Wang, Ph.D. - Publications

Affiliations: 
2012 Electronic Engineering The Chinese University of Hong Kong, Hong Kong, Hong Kong 
Area:
Electronics and Electrical Engineering, Materials Science Engineering

19 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Li L, Liu W, Gao A, Zhao Y, Lu Q, Yu L, Wang J, Yu L, Shao L, Miao F, Shi Y, Xu Y, Wang X. Plasmon Excited Ultrahot Carriers and Negative Differential Photoresponse in a Vertical Graphene van der Waals Heterostructure. Nano Letters. PMID 31025869 DOI: 10.1021/acs.nanolett.9b00908  0.36
2019 He R, Chen Z, Lai H, Zhang T, Wen J, Chen H, Xie F, Yue S, Liu P, Chen J, Xie W, Wang X, Xu J. Van der Waals transition metal oxide for vis-MIR broadband photodetection via intercalation strategy. Acs Applied Materials & Interfaces. PMID 30920195 DOI: 10.1021/acsami.9b00181  0.64
2018 Yu L, Zhu Z, Gao A, Wang J, Miao F, Shi Y, Wang X. Electrically tunable optical properties of few layers black arsenic phosphorus. Nanotechnology. PMID 30204123 DOI: 10.1088/1361-6528/aae05f  0.36
2018 Jiang J, Ling C, Xu T, Wang W, Niu X, Zafar A, Yan Z, Wang X, You Y, Sun L, Lu J, Wang J, Ni Z. Defect Engineering for Modulating the Trap States in 2D Photoconductors. Advanced Materials (Deerfield Beach, Fla.). e1804332. PMID 30168633 DOI: 10.1002/adma.201804332  0.36
2017 Long M, Gao A, Wang P, Xia H, Ott C, Pan C, Fu Y, Liu E, Chen X, Lu W, Nilges T, Xu J, Wang X, Hu W, Miao F. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Science Advances. 3: e1700589. PMID 28695200 DOI: 10.1126/sciadv.1700589  0.48
2016 Wu B, Zhao Y, Nan H, Yang Z, Zhang Y, Zhao H, He D, Jiang Z, Liu X, Li Y, Shi Y, Ni Z, Wang J, Xu JB, Wang X. Precise, self-limited epitaxy of ultrathin organic semiconductors and heterojunctions tailored by van der Waals interactions. Nano Letters. PMID 27183049 DOI: 10.1021/acs.nanolett.6b01108  0.64
2016 Liu X, Luo X, Nan H, Guo H, Wang P, Zhang L, Zhou M, Yang Z, Shi Y, Hu W, Ni Z, Qiu T, Yu Z, Xu JB, Wang X. Epitaxial Ultrathin Organic Crystals on Graphene for High-Efficiency Phototransistors. Advanced Materials (Deerfield Beach, Fla.). PMID 27146896 DOI: 10.1002/adma.201600400  0.64
2016 Zhang Y, Qiao J, Gao S, Hu F, He D, Wu B, Yang Z, Xu B, Li Y, Shi Y, Ji W, Wang P, Wang X, Xiao M, Xu H, ... Wang X, et al. Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit. Physical Review Letters. 116: 016602. PMID 26799035 DOI: 10.1103/PhysRevLett.116.016602  0.64
2014 He D, Zhang Y, Wu Q, Xu R, Nan H, Liu J, Yao J, Wang Z, Yuan S, Li Y, Shi Y, Wang J, Ni Z, He L, Miao F, ... ... Wang X, et al. Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors. Nature Communications. 5: 5162. PMID 25330787 DOI: 10.1038/ncomms6162  0.64
2014 Tian H, Tan Z, Wu C, Wang X, Mohammad MA, Xie D, Yang Y, Wang J, Li LJ, Xu J, Ren TL. Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions. Scientific Reports. 4: 5951. PMID 25109609 DOI: 10.1038/srep05951  0.48
2014 Wang X, Xie W, Xu JB. Graphene based non-volatile memory devices. Advanced Materials (Deerfield Beach, Fla.). 26: 5496-503. PMID 24497002 DOI: 10.1002/adma.201306041  0.64
2014 Wang X, Xie W, Chen J, Xu JB. Homo- and hetero- p-n junctions formed on graphene steps. Acs Applied Materials & Interfaces. 6: 3-8. PMID 24182202 DOI: 10.1021/am402808p  0.64
2013 Wang X, Xu H, Min J, Peng LM, Xu JB. Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances. Nanoscale. 5: 2811-7. PMID 23440092 DOI: 10.1039/c3nr33940h  0.64
2012 Wang X, Xie W, Du J, Wang C, Zhao N, Xu JB. Graphene/metal contacts: bistable states and novel memory devices. Advanced Materials (Deerfield Beach, Fla.). 24: 2614-9. PMID 22488980 DOI: 10.1002/adma.201104574  0.64
2011 Wang X, Xu JB, Wang C, Du J, Xie W. High-performance graphene devices on SiO₂/Si substrate modified by highly ordered self-assembled monolayers. Advanced Materials (Deerfield Beach, Fla.). 23: 2464-8. PMID 21484896 DOI: 10.1002/adma.201100476  0.64
2010 Tian X, Xu J, Wang X. Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field. The Journal of Physical Chemistry. B. 114: 11377-81. PMID 20690622 DOI: 10.1021/jp102800v  0.48
2010 Wang X, Song F, Chen Q, Wang T, Wang J, Liu P, Shen M, Wan J, Wang G, Xu JB. Scaling dopant states in a semiconducting nanostructure by chemically resolved electron energy-loss spectroscopy: a case study on Co-doped ZnO. Journal of the American Chemical Society. 132: 6492-7. PMID 20405827 DOI: 10.1021/ja100912k  0.64
2009 Hua R, Xu JB, Wang JC, Zhu L, Li B, Liu Y, Huang SD, Jin L, Xu ZY, Wang XF. Association of TNFAIP3 polymorphism with rheumatic heart disease in Chinese Han population. Immunogenetics. 61: 739-44. PMID 19902201 DOI: 10.1007/s00251-009-0405-8  0.64
2009 Zhang ZH, Wang X, Xu JB, Muller S, Ronning C, Li Q. Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures. Nature Nanotechnology. 4: 523-7. PMID 19662016 DOI: 10.1038/nnano.2009.181  0.64
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