Year |
Citation |
Score |
2019 |
Zhang M, Cai Q, Yang Z, Jia X, Fan X. A 1-MHz-Bandwidth Gm-C-Based Quadrature Bandpass Sigma-Delta Modulator Achieving −153.7-dBFS/Hz NSD With Background Calibration Ieee Transactions On Circuits and Systems I-Regular Papers. 66: 909-919. DOI: 10.1109/Tcsi.2018.2871275 |
0.465 |
|
2018 |
Zhang M, Cai Q, Fan X. A high-speed, high-linearity, and energy-efficient subranging single-side capacitor switching scheme for SAR ADCs Analog Integrated Circuits and Signal Processing. 96: 175-182. DOI: 10.1007/S10470-018-1183-8 |
0.375 |
|
2018 |
Cai Q, Yang Z, Zhang M, Jia X, Fan X. A fast-settling charge-pump PLL with constant loop bandwidth Analog Integrated Circuits and Signal Processing. 94: 19-26. DOI: 10.1007/S10470-017-1083-3 |
0.391 |
|
2017 |
Zhang M, Noh K, Fan X, Sanchez-Sinencio E. A 0.8–1.2 V 10–50 MS/s 13-bit Subranging Pipelined-SAR ADC Using a Temperature-Insensitive Time-Based Amplifier Ieee Journal of Solid-State Circuits. 52: 2991-3005. DOI: 10.1109/Jssc.2017.2742523 |
0.611 |
|
2017 |
Zhang M, Liu Q, Fan X. Gain-boosted dynamic amplifier for pipelined-SAR ADCs Electronics Letters. 53: 708-709. DOI: 10.1049/El.2017.0146 |
0.465 |
|
2009 |
Zhang H, Fan X, Sinencio ES. A Low-Power, Linearized, Ultra-Wideband LNA Design Technique Ieee Journal of Solid-State Circuits. 44: 320-330. DOI: 10.1109/Jssc.2008.2011033 |
0.539 |
|
2008 |
Fan X, Onabajo M, Fernández-Rodríguez FO, Silva-Martinez J, Sánchez-Sinencio E. A current injection built-in test technique for RF low-noise amplifiers Ieee Transactions On Circuits and Systems I: Regular Papers. 55: 1794-1804. DOI: 10.1109/Tcsi.2008.918207 |
0.56 |
|
2008 |
Fan X, Zhang H, SÁnchez-Sinencio E. A Noise Reduction and Linearity Improvement Technique for a Differential Cascode LNA Ieee Journal of Solid-State Circuits. 43: 588-599. DOI: 10.1109/Jssc.2007.916584 |
0.594 |
|
2005 |
Fan X, Mishra C, Sanchez-Sinencio E. Single Miller capacitor frequency compensation technique for low-power multistage amplifiers Ieee Journal of Solid-State Circuits. 40: 584-592. DOI: 10.1109/Jssc.2005.843602 |
0.606 |
|
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