☰

Kunigunde H. Cherenack, Ph.D. - Publications

Affiliations: 
2009 Princeton University, Princeton, NJ 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

27 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Erb RM, Cherenack KH, Stahel RE, Libanori R, Kinkeldei T, Münzenrieder N, Tröster G, Studart AR. Locally reinforced polymer-based composites for elastic electronics. Acs Applied Materials & Interfaces. 4: 2860-4. PMID 22676211 DOI: 10.1021/Am300508E  0.325
2011 Sturm JC, Huang Y, Han L, Liu T, Hekmatshoar B, Cherenack K, Lausecker E, Wagner S. Amorphous silicon: The other silicon 2011 12th International Conference On Ultimate Integration On Silicon, Ulis 2011. 34-37. DOI: 10.1109/ULIS.2011.5758011  0.54
2011 Münzenrieder NS, Cherenack KH, Tröster G. Testing of flexible InGaZnO-based thin-film transistors under mechanical strain Epj Applied Physics. 55. DOI: 10.1051/epjap/2011100416  0.32
2010 Cherenack K, Tröster G. The Path Towards Woven Thin-film Transistors Mrs Proceedings. 1256. DOI: 10.1557/PROC-1256-N11-19  0.381
2010 Cherenack KH, Hekmatshoar B, Sturm JC, Wagner S. Self-aligned amorphous silicon thin-film transistors fabricated on clear plastic at 300°C Ieee Transactions On Electron Devices. 57: 2381-2389. DOI: 10.1109/Ted.2010.2056132  0.633
2010 Cherenack KH, Munzenrieder NS, Troster G. Impact of mechanical bending on ZnO and IGZO thin-film transistors Ieee Electron Device Letters. 31: 1254-1256. DOI: 10.1109/LED.2010.2068535  0.453
2010 Wagner S, Han L, Hekmatshoar B, Song K, Mandlik P, Cherenack KH, Sturm JC. 61.3: Amorphous silicon TFT technology for rollable OLED displays 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2: 917-920.  0.704
2010 Wagner S, Han L, Hekmatshoar B, Song K, Mandlik P, Cherenack KH, Sturm JC. 61.3: Amorphous silicon TFT technology for rollable OLED displays 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2: 917-920.  0.664
2009 Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Amorphous Silicon Thin-Film Transistors made on Clear Plastic at 300 °C Journal of the Korean Physical Society. 54: 415-420. DOI: 10.3938/Jkps.54.415  0.65
2009 Sturm JC, Hekmatshoar B, Cherenack K, Wagner S. 65.1 : Invited Paper: Amorphous Silicon TFT's with 100-Year Lifetimes in a Clear Plastic Compatible Process for AMOLEDs Sid Symposium Digest of Technical Papers. 40: 979. DOI: 10.1889/1.3256963  0.477
2009 Han L, Mandlik P, Cherenack KH, Wagner S. Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2 /V s for electrons and 0.1 cm2 /V s for holes Applied Physics Letters. 94. DOI: 10.1063/1.3119636  0.719
2009 Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Amorphous silicon thin-film transistors made on clear plastic at 300°C Journal of the Korean Physical Society. 54: 415-420.  0.615
2008 Hekmatshoar B, Kattamis AZ, Cherenack K, Wagner S, Sturm JC. A novel TFT-OLED integration for OLED-independent pixel programming in amorphous-Si AMOLED pixels Journal of the Society For Information Display. 16: 183-188. DOI: 10.1889/1.2835027  0.57
2008 Kattamis AZ, Cherenack KH, Cheng I, Long K, Sturm JC, Wagner S. Fracture Mechanisms of SiN x Thin-films on Compliant Substrates Mrs Proceedings. 1078. DOI: 10.1557/Proc-1078-M14-02  0.612
2008 Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Self-aligned amorphous silicon thin film transistors with mobility above 1 cm 2V -1s -1 fabricated at 300° C on clear plastic substrates Materials Research Society Symposium Proceedings. 1066: 471-476. DOI: 10.1557/Proc-1066-A20-03  0.605
2008 Chen JZ, Cherenack K, Tsay C, Cheng I, Wagner S. Effects of SiN x Passivation and Gate Metal Roughness on the Performance of On-plastic a-Si : H TFTs Electrochemical and Solid State Letters. 11. DOI: 10.1149/1.2812443  0.637
2008 Hekmatshoar B, Kattamis AZ, Cherenack KH, Long K, Chen JZ, Wagner S, Sturm JC, Rajan K, Hack M. Reliability of active-matrix organic light-emitting-diode arrays with amorphous silicon thin-film transistor backplanes on clear plastic Ieee Electron Device Letters. 29: 63-66. DOI: 10.1109/Led.2007.910800  0.614
2008 Hekmatshoar B, Cherenack KH, Wagner S, Sturm JC. Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796621  0.555
2008 Hekmatshoar B, Cherenack K, Long K, Kattamis A, Wagner S, Sturm JC. Amoled reliability with a-si tft's in normal vs. inverted TFT/OLED integration scheme Device Research Conference - Conference Digest, Drc. 243-244. DOI: 10.1109/DRC.2008.4800822  0.47
2008 Hekmatshoar B, Cherenack KH, Kattamis AZ, Long K, Wagner S, Sturm JC. Highly stable amorphous-silicon thin-film transistors on clear plastic Applied Physics Letters. 93. DOI: 10.1063/1.2963481  0.662
2008 Kattamis AZ, Cherenack KH, Cheng IC, Long K, Sturm JC, Wagner S. Fracture mechanisms of sink thin-films on compliant substrates Materials Research Society Symposium Proceedings. 1078: 16-21.  0.464
2007 Cherenack KH, Kattamis AZ, Hekmatshoar B, Sturm JC, Wagner S. Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic Ieee Electron Device Letters. 28: 1004-1006. DOI: 10.1109/Led.2007.907411  0.636
2007 Kattamis AZ, Cherenack KH, Hekmatshoar B, Cheng IC, Gleskova H, Sturm JC, Wagner S. Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability Ieee Electron Device Letters. 28: 606-608. DOI: 10.1109/Led.2007.900078  0.675
2007 Kattamis AZ, Cheng IC, Long K, Hekmatshoar B, Cherenack KH, Wagner S, Sturm JC, Venugopal SM, Loy DE, O'Rourke SM, Allee DR. Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays Ieee/Osa Journal of Display Technology. 3: 304-308. DOI: 10.1109/Jdt.2007.900935  0.669
2007 Hekmatshoar B, Kattamis AZ, Cherenack K, Wagner S, Sturm JC. Novel amorphous-Si AMOLED pixels with OLED-independent turn-on voltage and driving current 65th Drc Device Research Conference. 95-96. DOI: 10.1109/DRC.2007.4373666  0.515
2007 Cheng IC, Wagner S, Kattamis AZ, Hekmatshoar B, Cherenack KH, Gleskova H, Sturm JC. Amorphous silicon thin film transistor backplanes fabricated at high temperature for flexible displays Idmc 2007 - International Display Manufacturing Conference and Fpd Expo - Proceedings. 311-314.  0.501
2006 Cherenack K, Kattamis A, Long K, Cheng I, Wagner S, Sturm JC. SiNx barrier layers deposited at 250°C on a clear polymer substrate Mrs Proceedings. 936: 7-12. DOI: 10.1557/Proc-0936-L01-05  0.601
Show low-probability matches.