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Anish A. Khandekar, Ph.D. - Publications

Affiliations: 
2006 University of Wisconsin, Madison, Madison, WI 
Area:
Chemical Engineering, Condensed Matter Physics
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23 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Rathi MK, Khandekar AA, Song X, Babcock SE, Mawst LJ, Kuech TF. GaAsSb-GaAsN-based type-II 'W' structures for MID-IR emission Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 263-266. DOI: 10.1109/ICIPRM.2009.5012496  0.583
2009 Rathi MK, Tsvid G, Shin JC, Khandekar AA, Botez D, Kuech TF. Surface states passivation for and regrowth around nanoposts formed for the fabrication of InP-based intersubband quantum box lasers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 83-86. DOI: 10.1109/ICIPRM.2009.5012428  0.566
2009 Rathi MK, Khandekar AA, Song X, Babcock SE, Mawst LJ, Kuech TF. High antimony content GaAs1-z Nz - GaAs1-y Sby type-II "w" structure for long wavelength emission Journal of Applied Physics. 106. DOI: 10.1063/1.3226000  0.676
2009 Rathi MK, Tsvid G, Khandekar AA, Shin JC, Botez D, Kuech TF. Passivation of interfacial states for GaAs- and InGaAs/inp-based regrown nanostructures Journal of Electronic Materials. 38: 2023-2032. DOI: 10.1007/S11664-009-0887-Z  0.627
2008 Kuech TF, Khandekar AA, Rathi M, Mawst LJ, Huang JYT, Song X, Babcock SE, Meyer JR, Vurgaftman I. MOVPE growth of antimonide-containing alloy materials for long wavelength applications Journal of Crystal Growth. 310: 4826-4830. DOI: 10.1016/J.Jcrysgro.2008.09.006  0.703
2007 Park JH, Khandekar A, Park S, Mawst L, Kuech T, Nealey P. Selective GaAs Quantum Dot Array Growth using Dielectric and AlGaAs Masks Pattern-Transferred from Diblock Copolymer Mrs Proceedings. 1014. DOI: 10.1557/Proc-1014-Aa07-15  0.584
2007 Allen CG, Dorr JC, Khandekar AA, Beach JD, Schick IC, Schick EJ, Collins RT, Kuech TF. Microcontact printing of indium metal using salt solution "ink", Thin Solid Films. 515: 6812-6816. DOI: 10.1016/J.Tsf.2007.02.070  0.506
2007 Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy Journal of Crystal Growth. 303: 456-465. DOI: 10.1016/J.Jcrysgro.2006.12.034  0.591
2007 Clayton AJ, Khandekar AA, Kuech TF, Mason NJ, Robinson MF, Watkins S, Guo Y. Growth of AlN by vectored flow epitaxy Journal of Crystal Growth. 298: 328-331. DOI: 10.1016/J.Jcrysgro.2006.10.130  0.534
2007 Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy Journal of Crystal Growth. 298: 154-158. DOI: 10.1016/J.Jcrysgro.2006.10.012  0.566
2007 Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Development of lateral epitaxial overgrown InAs microstructure on patterned (100) GaAs substrates Journal of Optoelectronics and Advanced Materials. 9: 1242-1245.  0.537
2006 Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2171486  0.594
2006 Park JH, Khandekar AA, Park SM, Mawst LJ, Kuech TF, Nealey PF. Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers Journal of Crystal Growth. 297: 283-288. DOI: 10.1016/J.Jcrysgro.2006.09.049  0.584
2006 Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (1 0 0) GaAs Journal of Crystal Growth. 292: 40-52. DOI: 10.1016/J.Jcrysgro.2006.04.086  0.614
2006 Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Characteristics of InGaAsN-GaAsSb type-II "W" quantum wells Journal of Crystal Growth. 287: 615-619. DOI: 10.1016/J.Jcrysgro.2005.10.087  0.605
2005 Khandekar AA, Hawkins BE, Kuech TF, Yeh JY, Mawst LJ, Meyer JR, Vurgaftman I, Tansu N. Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates Journal of Applied Physics. 98. DOI: 10.1063/1.2148620  0.602
2005 Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. InAs growth and development of defect microstructure on GaAs Journal of Crystal Growth. 275. DOI: 10.1016/J.Jcrysgro.2004.11.133  0.603
2004 Tsvid G, D'Souza M, Botez D, Hawkins B, Khandekar A, Kuech T, Zory P. Towards intersubband quantum box lasers: Electron-beam lithography update Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3214-3216. DOI: 10.1116/1.1824055  0.518
2004 Beach JD, Veauvy C, Caputo R, Collins RT, Khandekar AA, Kuech TF, Inoki CK, Kuan TS, Hollingsworth RE. Formation of regular arrays of submicron GaAs dots on silicon Applied Physics Letters. 84: 5323-5325. DOI: 10.1063/1.1766391  0.602
2004 Hawkins BE, Khandekar AA, Yeh JY, Mawst LJ, Kuech TF. Effects of Gas switching sequences on GaAs/GaAs1-ySby super-lattices Journal of Crystal Growth. 272: 686-693. DOI: 10.1016/J.Jcrysgro.2004.08.045  0.578
2003 Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates Applied Physics Letters. 83: 1977-1979. DOI: 10.1063/1.1609231  0.572
2002 Suryanarayanan G, Khandekar AA, Hawkins BE, Kuech TF, Babcock SE. Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M1.4  0.558
2002 Suryanarayanan G, Khandekar AA, Hawkins BE, Kuech TF, Babcock SE. Lateral epitaxial overgrowth of InAs on (100) GaAs substrates Materials Research Society Symposium - Proceedings. 744: 9-14.  0.348
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