Ian C. Manning, Ph.D. - Publications
Affiliations: | 2011 | Pennsylvania State University, State College, PA, United States |
Area:
Materials Science EngineeringYear | Citation | Score | |||
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2012 | Redwing JM, Manning IC, Weng X, Eichfeld SM, Acord JD, Fanton MA, Snyder DW. Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films Materials Research Society Symposium Proceedings. 1396: 183-191. DOI: 10.1557/Opl.2012.215 | 0.577 | |||
2012 | Raghavan S, Manning IC, Weng X, Redwing JM. Dislocation bending and tensile stress generation in GaN and AlGaN films Journal of Crystal Growth. 359: 35-42. DOI: 10.1016/J.Jcrysgro.2012.08.020 | 0.741 | |||
2010 | Manning IC, Weng X, Fanton MA, Snyder DW, Redwing JM. Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN Journal of Crystal Growth. 312: 1301-1306. DOI: 10.1016/J.Jcrysgro.2009.11.024 | 0.69 | |||
2009 | Manning IC, Weng X, Acord JD, Fanton MA, Snyder DW, Redwing JM. Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films Journal of Applied Physics. 106. DOI: 10.1063/1.3160331 | 0.726 | |||
2008 | Acord JD, Manning IC, Weng X, Snyder DW, Redwing JM. In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films Applied Physics Letters. 93. DOI: 10.1063/1.2986448 | 0.795 | |||
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