Jarod C. Gagnon, Ph.D. - Publications

2014 Materials Science and Engineering Pennsylvania State University, State College, PA, United States 
Materials Science Engineering

4 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Gagnon JC, Shen H, Yuwen Y, Wang K, Mayer TS, Redwing JM. Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates Journal of Crystal Growth. 446: 1-6. DOI: 10.1016/j.jcrysgro.2016.04.027  0.6
2014 Gagnon JC, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates Journal of Crystal Growth. 393: 98-102. DOI: 10.1016/j.jcrysgro.2013.08.031  0.6
2012 Brom JE, Ke Y, Du R, Won D, Weng X, Andre K, Gagnon JC, Mohney SE, Li Q, Chen K, Xi XX, Redwing JM. Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.4704680  0.6
2012 Gagnon JC, Tungare M, Weng X, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. In situ stress measurements during GaN growth on ion-implanted AlN/Si substrates Journal of Electronic Materials. 41: 865-872. DOI: 10.1007/s11664-011-1852-1  0.6
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