Santhosh Krishnan, Ph.D. - Publications
Affiliations: | 2005 | Arizona State University, Tempe, AZ, United States |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2006 | Krishnan S, Fischetti M, Vasileska D. Self-consistent full band two-dimensional Monte Carlo two-dimensional Poisson device solver for modeling SiGe p-channel devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1997-2003. DOI: 10.1116/1.2216718 | 0.592 | |||
2006 | Krishnan S, Vasileska D, Fischetti MV. Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently Journal of Computational Electronics. 5: 435-438. DOI: 10.1007/S10825-006-0046-1 | 0.593 | |||
2005 | Krishnan S, Vasileska D, Fischetti MV. Hole transport in p-channel Si MOSFETs Microelectronics Journal. 36: 323-326. DOI: 10.1016/J.Mejo.2005.02.111 | 0.584 | |||
2005 | Krishnan S, Vasileska D, Fischetti MV. Band-structure and quantum effects on hole transport in p-MOSFETs Journal of Computational Electronics. 4: 27-30. DOI: 10.1007/S10825-005-7101-1 | 0.575 | |||
2004 | Zorman B, Krishnan S, Vasileska D, Xu J, Van Schilfgaarde M. A First Principles Alloy Scattering Approach for Monte Carlo Hole Mobility Calculations Journal of Computational Electronics. 3: 351-354. DOI: 10.1007/S10825-004-7075-4 | 0.519 | |||
2003 | Krishnan S, Vasileska D. Self-Consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs Journal of Computational Electronics. 2: 443-448. DOI: 10.1023/B:Jcel.0000011468.64475.94 | 0.53 | |||
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