Yujun Zhong, Ph.D. - Publications

Affiliations: 
2014 Department of Materials Science and Engineering University of Delaware, Newark, DE, United States 
Area:
Materials Science Engineering

17 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Yu L, Zhong Y, Dev S, Wasserman D. Engineering carrier lifetimes in type-II In(Ga)Sb/InAs mid-IR emitters Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 10. DOI: 10.1116/1.4972978  0.389
2016 Chang K, Liu J, Lin H, Wang N, Zhao K, Zhang A, Jin F, Zhong Y, Hu X, Duan W, Zhang Q, Fu L, Xue QK, Chen X, Ji SH. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. Science (New York, N.Y.). 353: 274-8. PMID 27418506 DOI: 10.1126/Science.Aad8609  0.301
2016 Sellers DG, Zhang J, Chen EY, Zhong Y, Doty MF, Zide JMO. Novel nanostructures for efficient photon upconversion and high-efficiency photovoltaics Solar Energy Materials and Solar Cells. 155: 446-453. DOI: 10.1016/J.Solmat.2016.06.043  0.342
2015 Feng K, Streyer W, Zhong Y, Hoffman AJ, Wasserman D. Photonic materials, structures and devices for Reststrahlen optics. Optics Express. 23: A1418-33. PMID 26698791 DOI: 10.1364/Oe.23.0A1418  0.335
2015 Streyer W, Feng K, Zhong Y, Hoffman AJ, Wasserman D. Engineering the Reststrahlen band with hybrid plasmon/phonon excitations Mrs Communications. 1-8. DOI: 10.1557/Mrc.2015.81  0.333
2015 Zhong Y, Malagari SD, Hamilton T, Wasserman D. Review of mid-infrared plasmonic materials Journal of Nanophotonics. 9. DOI: 10.1117/1.Jnp.9.093791  0.347
2015 Sellers DG, Polly SJ, Zhong Y, Hubbard SM, Zide JMO, Doty MF. New nanostructured materials for efficient photon upconversion Ieee Journal of Photovoltaics. 5: 224-228. DOI: 10.1109/Jphotov.2014.2367865  0.312
2015 Chai GMT, Broderick CA, O'Reilly EP, Othaman Z, Jin SR, Petropoulos JP, Zhong Y, Dongmo PB, Zide JMO, Sweeney SJ, Hosea TJC. Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Δso> Eg Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/9/094015  0.757
2015 Streyer W, Feng K, Zhong Y, Hoffman AJ, Wasserman D. Selective absorbers and thermal emitters for far-infrared wavelengths Applied Physics Letters. 107. DOI: 10.1063/1.4929432  0.318
2014 Liu R, Zhong Y, Yu L, Kim H, Law S, Zuo JM, Wasserman D. Mid-infrared emission from In(Ga)Sb layers on InAs(Sb). Optics Express. 22: 24466-77. PMID 25322022 DOI: 10.1364/Oe.22.024466  0.388
2013 Zhong Y, Dongmo PB, Gong L, Law S, Chase B, Wasserman D, Zide JMO. Degenerately doped ingabias: Si as a highly conductive and transparent contact material in the infrared range Optical Materials Express. 3: 1197-1204. DOI: 10.1364/Ome.3.001197  0.735
2012 Marko IP, Batool Z, Hild K, Jin SR, Hossain N, Hosea TJC, Petropoulos JP, Zhong Y, Dongmo PB, Zide JMO, Sweeney SJ. Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications Applied Physics Letters. 101: 221108. DOI: 10.1063/1.4768532  0.739
2012 Kudrawiec R, Kopaczek J, Misiewicz J, Walukiewicz W, Petropoulos JP, Zhong Y, Dongmo PB, Zide JMO. Temperature dependence of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys studied by photoreflectance Journal of Applied Physics. 112: 113508. DOI: 10.1063/1.4768262  0.73
2012 Dongmo P, Zhong Y, Attia P, Bomberger C, Cheaito R, Ihlefeld JF, Hopkins PE, Zide J. Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs Journal of Applied Physics. 112. DOI: 10.1063/1.4761996  0.571
2012 Zhong Y, Dongmo PB, Petropoulos JP, Zide JMO. Effects of molecular beam epitaxy growth conditions on composition and optical properties of InxGa1−xBiyAs1−y Applied Physics Letters. 100: 112110. DOI: 10.1063/1.3695066  0.745
2011 Kudrawiec R, Kopaczek J, Misiewicz J, Petropoulos JP, Zhong Y, Zide JMO. Contactless electroreflectance study of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys Applied Physics Letters. 99: 251906. DOI: 10.1063/1.3669703  0.397
2011 Petropoulos JP, Zhong Y, Zide JMO. Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material Applied Physics Letters. 99: 31110. DOI: 10.1063/1.3614476  0.477
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