| Year |
Citation |
Score |
| 2002 |
Liliental-Weber Z, Zakharov D, Jasinski J, Washburn J, O'Keefe MA, Morkoc H. Screw dislocations in MBE GaN layers grown on top of HVPE layers: Are they different? Materials Research Society Symposium - Proceedings. 743: 243-248. DOI: 10.1557/Proc-743-L3.48 |
0.382 |
|
| 2002 |
Liliental-Weber Z, Jasinski J, Washburn J. Differences and similarities between structural properties of GaN grown by different growth methods Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 70-75. DOI: 10.1109/Sim.2002.1242728 |
0.357 |
|
| 2002 |
Lim SH, Washburn J, Liliental-Weber Z. Transmission electron microscopy analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN Journal of Electron Microscopy. 51. DOI: 10.1093/Jmicro/51.Supplement.S171 |
0.368 |
|
| 2002 |
Liliental-Weber Z, Jasinski J, Washburn J, O'Keefe MA. Screw dislocations in GaN Microscopy and Microanalysis. 8: 1198-1199. DOI: 10.1017/S1431927602107860 |
0.378 |
|
| 2002 |
Liliental-Weber Z, Jasinski J, Washburn J. Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods Journal of Crystal Growth. 246: 259-270. DOI: 10.1016/S0022-0248(02)01750-5 |
0.38 |
|
| 2001 |
Lim SH, Washburn J, Liliental-Weber Z, Shindo D. Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2601-2603. DOI: 10.1116/1.1397462 |
0.367 |
|
| 2001 |
Jasinski J, Yu KM, Walukiewicz W, Liliental-Weber Z, Washburn J. Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantation Physica B: Condensed Matter. 308: 874-876. DOI: 10.1016/S0921-4526(01)00930-9 |
0.352 |
|
| 2001 |
Bourret-Courchesne ED, Yu KM, Benamara M, Liliental-Weber Z, Washburn J. Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer Journal of Electronic Materials. 30: 1417-1420. DOI: 10.1007/S11664-001-0194-9 |
0.371 |
|
| 2001 |
Liliental-Weber Z, Benamara M, Washburn J, Domagala JZ, Bak-Misiuk J, Piner EL, Roberts JC, Bedair SM. Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies Journal of Electronic Materials. 30: 439-444. DOI: 10.1007/S11664-001-0056-5 |
0.374 |
|
| 2000 |
Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Dupuis RD, Eiting CJ. Mg segregation, difficulties of p-doping in gan Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004695 |
0.353 |
|
| 2000 |
Benamara M, Liliental-Weber Z, Mazur JH, Swider W, Washburn J, Iwaya M, Akasaki I, Amano H. The role of the multi buffer layer technique on the structural quality of GaN Mrs Internet Journal of Nitride Semiconductor Research. 5. DOI: 10.1557/Proc-595-F99W5.8 |
0.355 |
|
| 2000 |
Sasaki A, Weber ER, Liliental-Weber Z, Ruvimov S, Washburn J, Nabetani Y. Transition thickness of semiconductor heteroepitaxy Thin Solid Films. 367: 277-280. DOI: 10.1016/S0040-6090(00)00688-X |
0.34 |
|
| 2000 |
Benamara M, Liliental-Weber Z, Kellermann S, Swider W, Washburn J, Mazur J, Bourret-Courchesne ED. Study of high-quality GaN grown by OMVPE using an intermediate layer Journal of Crystal Growth. 218: 447-450. DOI: 10.1016/S0022-0248(00)00568-6 |
0.393 |
|
| 1999 |
Liliental-Weber Z, Benamara M, Swider W, Washburn J, Park J, Grudowski PA, Eiting CJ, Dupuis RD. TEM study of defects in laterally overgrown GaN layers Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300002891 |
0.41 |
|
| 1999 |
Liliental-Weber Z, Benamara M, Ruvimov S, Mazur JH, Washburn J, Grzegory I, Porowski S. TEM study of Mg-doped bulk GaN crystals Materials Research Society Symposium - Proceedings. 572: 363-368. DOI: 10.1557/Proc-572-363 |
0.338 |
|
| 1999 |
Benamara M, Liliental-Weber Z, Swider W, Washburn J, Dupuis RD, Grudowski PA, Eiting CJ, Yang JW, Khan MA. Atomic scale analysis of InGaN multi-quantum wells Materials Research Society Symposium - Proceedings. 572: 357-362. DOI: 10.1557/Proc-572-357 |
0.338 |
|
| 1999 |
Ruvimov S, Liliental-Weber Z, Washburn J, Kim Y, Sudhir GS, Krueger J, Weber ER. Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer Materials Research Society Symposium - Proceedings. 572: 295-300. DOI: 10.1557/Proc-572-295 |
0.389 |
|
| 1999 |
Liliental-Weber Z, Benamara M, Washburn J, Grzegory I, Porowski S. Spontaneous ordering in bulk GaN:Mg samples Physical Review Letters. 83: 2370-2373. DOI: 10.1103/Physrevlett.83.2370 |
0.361 |
|
| 1999 |
Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Dupuis RD, Eiting CJ. Ordering in bulk GaN : Mg samples: defects caused by Mg doping Physica B: Condensed Matter. 273: 124-129. DOI: 10.1016/S0921-4526(99)00422-6 |
0.347 |
|
| 1998 |
Ruvimov S, Liliental-Weber Z, Washburn J, Ledentsov NN, Ustinov VM, Shchukirt VA, Kop'Ev PS, Alterov ZL, Bimberg D. Structural characterization of self-organized nanostructures Fizika Tverdogo Tela. 40: 849-851. DOI: 10.1134/1.1130394 |
0.329 |
|
| 1998 |
Rouvimov S, Liliental-Weber Z, Swider W, Washburn J, Weber ER, Sasaki A, Wakahara A, Furkawa Y, Abe T, Noda S. Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix Journal of Electronic Materials. 27: 427-432. DOI: 10.1007/S11664-998-0172-6 |
0.312 |
|
| 1997 |
Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I, Koike M. Atomic structure of grain boundaries and interfaces in III-nitrides epitaxial systems Materials Research Society Symposium - Proceedings. 482: 387-392. DOI: 10.1557/Proc-482-387 |
0.4 |
|
| 1997 |
Liliental-Weber Z, Chen Y, Ruvimov S, Washburn J. Formation mechanism of nanotubes in GaN Physical Review Letters. 79: 2835-2838. DOI: 10.1103/Physrevlett.79.2835 |
0.383 |
|
| 1997 |
Ruvimov S, Liliental-Weber Z, Washburn J, Drummond TJ, Hafich M, Lee SR. Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy Applied Physics Letters. 71: 2931-2933. DOI: 10.1063/1.120219 |
0.388 |
|
| 1997 |
Liliental-Weber Z, Washburn J, Pakula K, Baranowski J. Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films Microscopy and Microanalysis. 3: 436-442. DOI: 10.1017/S1431927697970331 |
0.332 |
|
| 1997 |
Jasinski J, Liliental-Weber Z, Washburn J, Tan HH, Jagadish C, Krotkus A, Marcinkevicius S, Kaminska M. Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga ions Journal of Electronic Materials. 26: 449-457. DOI: 10.1007/S11664-997-0118-4 |
0.41 |
|
| 1996 |
Chen Y, Washburn J. Structural Transition in Large-Lattice-Mismatch Heteroepitaxy Physical Review Letters. 77: 4046-4049. PMID 10062374 DOI: 10.1103/Physrevlett.77.4046 |
0.382 |
|
| 1996 |
Liliental-Weber Z, Ruvimov S, Suski T, Ager JW, Swider W, Chen Y, Kisielowski C, Washburn J, Akasaki I, Amano H, Kuo C, Imler W. Effect of Si Doping on The Structure of Gan Mrs Proceedings. 423: 487. DOI: 10.1557/Proc-423-487 |
0.481 |
|
| 1996 |
Ruvimov S, Liliental‐Weber Z, Suski T, Ager JW, Washburn J, Krueger J, Kisielowski C, Weber ER, Amano H, Akasaki I. Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire Applied Physics Letters. 69: 990-992. DOI: 10.1063/1.117105 |
0.411 |
|
| 1996 |
Ruvimov S, Bourret ED, Washburn J, Liliental‐Weber Z. Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low‐pressure organometallic vapor phase epitaxy Applied Physics Letters. 68: 346-348. DOI: 10.1063/1.116711 |
0.433 |
|
| 1996 |
Jasinski J, Chen Y, Washburn J, Liliental‐Weber Z, Tan HH, Jagadish C, Kaminska M. Recrystallization of high energy As‐implanted GaAs studied by transmission electron microscopy Applied Physics Letters. 68: 1501-1503. DOI: 10.1063/1.115679 |
0.408 |
|
| 1996 |
Liliental-Weber Z, Kisielowski C, Ruvimov S, Chen Y, Washburn J, Grzegory I, Bockowski M, Jun J, Porowski S. Structural characterization of bulk GaN crystals grown under high hydrostatic pressure Journal of Electronic Materials. 25: 1545-1550. DOI: 10.1007/Bf02655397 |
0.431 |
|
| 1995 |
Lin XW, Liliental-Weber Z, Washburn J, Weber ER, Sasaki A, Wakahara A, Hasegawa T. Sn submonolayer-mediated Ge heteroepitaxy on Si(001). Physical Review B. 52: 16581-16587. PMID 9981057 DOI: 10.1103/Physrevb.52.16581 |
0.379 |
|
| 1995 |
Ruvimov S, Liliental-Weber Z, Swider W, Washburn J, Holmes DE. Tem/Hrem Structural Characterization of Directionally Solidified Gaas-Cras Eutectic Crystals Mrs Proceedings. 398. DOI: 10.1557/Proc-398-151 |
0.369 |
|
| 1995 |
Liliental-Weber Z, Ruvimov S, Kisielowski C, Chen Y, Swider W, Washburn J, Newman N, Gassmann A, Liu X, Schloss L, Weber E, Grzegory I, Bockowski M, Jun J, Suski T, et al. Structural Defects in Heteroepitaxial and Homoepitaxial GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-351 |
0.472 |
|
| 1994 |
Chen Y, Liu X, Weber E, Bourret ED, Liliental-Weber Z, Haller EE, Washburn J, Olego DJ, Dorman DR, Gaines JM, Tasker NR. Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions Applied Physics Letters. 65: 549-551. DOI: 10.1557/Proc-340-491 |
0.388 |
|
| 1994 |
Lin XW, Washburn J, Liliental‐Weber Z, Bernas H. Coarsening and phase transition of FeSi2 precipitates in Si Journal of Applied Physics. 75: 4686-4694. DOI: 10.1063/1.355922 |
0.382 |
|
| 1994 |
Lin XW, Lampert WV, Swider W, Haas TW, Holloway PH, Washburn J, Liliental-Weber Z. Morphology of AlNiGe ohmic contacts to n-GaAs as a function of contact composition Thin Solid Films. 253: 490-495. DOI: 10.1016/0040-6090(94)90372-7 |
0.413 |
|
| 1993 |
Lin XX, Desimoni J, Bemas H, Liliental-Weber Z, Washburn J. Evolution of Cubic FeSi 2 in Si upon Thermal Annealing Mrs Proceedings. 311: 293. DOI: 10.1557/Proc-311-293 |
0.33 |
|
| 1993 |
Chen Y, Liliental-Weber Z, Washburn J, Klem JF, Tsao JY. Reorientation of Misfit Dislocations During Annealing in InGaAs/GaAs(001) Interfaces Mrs Proceedings. 308: 405. DOI: 10.1557/Proc-308-405 |
0.382 |
|
| 1993 |
Im S, Washburn J, Gronsky R, Cheung NW, Yu KM, Ager JW. Reducing Dislocation Density by Sequential Implantation of Ge and C in Si Mrs Proceedings. 298: 139-143. DOI: 10.1557/Proc-298-139 |
0.586 |
|
| 1993 |
Im S, Washburn J, Gronsky R, Cheung NW, Yu KM, Ager JW. Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers Applied Physics Letters. 63: 2682-2684. DOI: 10.1063/1.110419 |
0.579 |
|
| 1993 |
Im S, Washburn J, Gronsky R, Cheung NW, Yu KM. Defect control during solid phase epitaxial growth of SiGe alloy layers Applied Physics Letters. 63: 929-931. DOI: 10.1063/1.109847 |
0.598 |
|
| 1993 |
Werner P, Zakharov ND, Chen Y, Liliental‐Weber Z, Washburn J, Klem JF, Tsao JY. Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate Applied Physics Letters. 62: 2798-2800. DOI: 10.1063/1.109213 |
0.385 |
|
| 1993 |
Chen Y, Zakharov ND, Werner P, Liliental‐Weber Z, Washburn J, Klem JF, Tsao JY. Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates Applied Physics Letters. 62: 1536-1538. DOI: 10.1063/1.108632 |
0.445 |
|
| 1993 |
Desimoni J, Behar M, Bernas H, Lin XW, Liliental-Weber Z, Washburn J. Ion-beam-induced simultaneous epitaxial growth of α- and cubic FeSi2 in Si (100) at 320°C Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 80: 755-758. DOI: 10.1016/0168-583X(93)90675-V |
0.388 |
|
| 1993 |
Zakharov ND, Werner P, Chen Y, Swider W, Liliental-Weber Z, Washburn J, Klem JF, Tsao JY. Compositional nonuniformities and strain relaxation at misoriented In x Ga (1-x) As/GaAs interfaces Journal of Electronic Materials. 22: 1341-1344. DOI: 10.1007/Bf02817697 |
0.368 |
|
| 1993 |
Zakharov ND, Liliental-Weber Z, Swider W, Washburn J, Brown AS, Metzger R. Ordering in InGaAs/InAlAs layers Journal of Electronic Materials. 22: 1495-1498. DOI: 10.1007/Bf02650006 |
0.395 |
|
| 1993 |
Liliental-Weber Z, Yu KM, Washburn J, Look DC. Anomalies in annealed LT-GaAs samples Journal of Electronic Materials. 22: 1395-1399. DOI: 10.1007/Bf02649984 |
0.415 |
|
| 1992 |
Werner P, Zakharov ND, Chen Y, Liliental-Weber Z, Washburn J, Klem JF, Tsao JY. Investigation of misfit dislocation configurations in MBE-grown InGaAs layers on misaligned GaAs (001) substrates Mrs Proceedings. 283. DOI: 10.1557/Proc-283-811 |
0.42 |
|
| 1992 |
Lin XW, Liliental-Weber Z, Swider W, McCants T, Newman N, Spicer WE, Washburn J, Weber ER. Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface Mrs Proceedings. 281. DOI: 10.1557/Proc-281-665 |
0.432 |
|
| 1992 |
Lin XW, Behar M, Desimoni J, Bemas H, Swider W, Liliental-Weber Z, Washburn J. Epitaxial Phase Formation of FeSi 2 in an Fe-Implanted Si by Ion Irradiation and Rapid Thermal Annealing Mrs Proceedings. 279: 535. DOI: 10.1557/Proc-279-535 |
0.351 |
|
| 1992 |
Powers M, Gronsky R, Washburn J. Thin Film Ag/YBCO Multistructures for Metal Contact Applications Mrs Proceedings. 275: 825. DOI: 10.1557/Proc-275-825 |
0.49 |
|
| 1991 |
Washburn J, Kvam EP, Liliental-Weber Z. Defect formation in epitaxial crystal growth Journal of Electronic Materials. 20: 155-161. DOI: 10.1007/Bf02653317 |
0.412 |
|
| 1991 |
Kvam EP, Washburn J, Allen LP, Zavracky PM. Materials study of silicon-on-lnsulator material by TEM Journal of Electronic Materials. 20: 151-153. DOI: 10.1007/Bf02653316 |
0.34 |
|
| 1990 |
Olson DA, Yu KM, Washburn J, Sands T. Thin Film Reactions on Alloy Semiconductor Substrates Mrs Proceedings. 202. DOI: 10.1557/Proc-202-713 |
0.512 |
|
| 1990 |
Washburn J, Kvam EP. Possible dislocation multiplication source in (001) semiconductor epitaxy Applied Physics Letters. 57: 1637-1639. DOI: 10.1063/1.104072 |
0.339 |
|
| 1990 |
Wong H, Lou J, Cheung NW, Kvam EP, Yu KM, Olson DA, Washburn J. Cross-section transmission electron microscopy study of carbon-implanted layers in silicon Applied Physics Letters. 57: 798-800. DOI: 10.1063/1.103424 |
0.383 |
|
| 1989 |
Caron-Popowich R, Washburn J, Sands T, Marshall ED. Comparison of Pd/Inp and Pd/GaAs Thin-Film Systems for Device Metallization Mrs Proceedings. 148. DOI: 10.1557/Proc-148-53 |
0.502 |
|
| 1989 |
Olson DA, Yu KM, Washburn J. Phase Formation in the Pt/Inp Thin Film System Mrs Proceedings. 148. DOI: 10.1557/Proc-148-47 |
0.402 |
|
| 1989 |
Ding J, Lee B, Yu KM, Gronsky R, Washburn J. Investigation of the Interface Integrity of the Thermally Stable Wn/GaAs Schottky Contacts Mrs Proceedings. 148. DOI: 10.1557/Proc-148-41 |
0.607 |
|
| 1989 |
Leon RP, Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes Journal of Applied Physics. 66: 711-715. DOI: 10.1063/1.343543 |
0.361 |
|
| 1989 |
Liliental-Weber Z, Newman N, Washburn J, Weber ER, Spicer WE. Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts Applied Physics Letters. 54: 356-358. DOI: 10.1063/1.100968 |
0.413 |
|
| 1988 |
Caron‐Popowich R, Washburn J, Sands T, Kaplan AS. Phase formation in the Pd‐InP system Journal of Applied Physics. 64: 4909-4913. DOI: 10.1063/1.342440 |
0.588 |
|
| 1988 |
Jones KS, Sadana DK, Prussin S, Washburn J, Weber ER, Hamilton WJ. The formation of a continuous amorphous layer by room .. temperature implantation of boron into silicon Journal of Applied Physics. 63: 1414-1418. DOI: 10.1063/1.341122 |
0.426 |
|
| 1988 |
Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Schottky barrier instabilities due to contamination Applied Physics Letters. 53: 145-147. DOI: 10.1063/1.100351 |
0.345 |
|
| 1988 |
Liliental-Weber Z, Weber ER, Parechanian-Allen L, Washburn J. On the use of convergent-beam electron diffraction for identification of antiphase boundaries in GaAs grown on Si Ultramicroscopy. 26: 59-63. DOI: 10.1016/0304-3991(88)90377-4 |
0.376 |
|
| 1987 |
Liliental-Weber Z, Miret-Goutier A, Newman N, Jou C, Spicer W, Washburn J, Weber E. The Influence of Current Stressing on the Structure of Ag Contacts to GaAs Mrs Proceedings. 102. DOI: 10.1557/Proc-102-241 |
0.323 |
|
| 1987 |
Sands T, Keramidas VG, Yu AJ, Yu K, Gronsky R, Washburn J. Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies Journal of Materials Research. 2: 262-275. DOI: 10.1557/Jmr.1987.0262 |
0.669 |
|
| 1987 |
Allen LTP, Weber ER, Washburn J, Pao YC. Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy Applied Physics Letters. 51: 670-672. DOI: 10.1063/1.98329 |
0.344 |
|
| 1987 |
Sands T, Chang CC, Kaplan AS, Keramidas VG, Krishnan KM, Washburn J. Ni-InP reaction: Formation of amorphous and crystalline ternary phases Applied Physics Letters. 50: 1346-1348. DOI: 10.1063/1.97851 |
0.557 |
|
| 1987 |
Sands T, Keramidas VG, Yu KM, Washburn J, Krishnan K. A comparative study of phase stability and film morphology in thin‐film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt) Journal of Applied Physics. 62: 2070-2079. DOI: 10.1063/1.339553 |
0.552 |
|
| 1986 |
Parechanian-Allen L, Weber ER, Washburn J, Pao YC. Surface faceting of (110) GaAs: Analysis and elimination Mrs Proceedings. 82: 487. DOI: 10.1557/Proc-82-487 |
0.34 |
|
| 1986 |
Shih Y, Washburn J, Gronsky R, Weber ER. AMORPHIZATION OF SILICON BY BORON ION IMPLANTATION Materials Research Society Symposia Proceedings. 71: 203-209. DOI: 10.1557/Proc-71-203 |
0.568 |
|
| 1986 |
Ling P, Wu NR, Washburn J. Regrowth of Implanted–Amorphous Si Mrs Proceedings. 71: 179. DOI: 10.1557/Proc-71-179 |
0.366 |
|
| 1986 |
Hong JM, Wang S, Flood JD, Merz JL, Sands T, Washburn J. Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy Journal of Vacuum Science & Technology B. 4: 629-630. DOI: 10.1116/1.583395 |
0.525 |
|
| 1986 |
Ding J, Washburn J, Sands T, Keramidas VG. In/GaAs reaction: Effect of an intervening oxide layer Applied Physics Letters. 49: 818-820. DOI: 10.1063/1.97557 |
0.573 |
|
| 1986 |
Liliental-Weber Z, Washburn J, Newman N, Spicer WE, Weber ER. Morphology of Au/GaAs interfaces Applied Physics Letters. 49: 1514-1516. DOI: 10.1063/1.97318 |
0.405 |
|
| 1986 |
Hong JM, Wang S, Sands T, Washburn J, Flood JD, Merz JL, Low T. Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy Applied Physics Letters. 48: 142-144. DOI: 10.1063/1.96977 |
0.595 |
|
| 1986 |
Sands T, Keramidas VG, Washburn J, Gronsky R. Structure and composition of NixGaAs Applied Physics Letters. 48: 402-404. DOI: 10.1063/1.96511 |
0.655 |
|
| 1986 |
Sands T, Keramidas VG, Gronsky R, Washburn J. Initial stages of the Pd-GaAs reaction: Formation and decomposition of ternary phases Thin Solid Films. 136: 105-122. DOI: 10.1016/0040-6090(86)90113-6 |
0.665 |
|
| 1985 |
Liliental-Weber Z, Newman N, Spicer WE, Grónsky R, Washburn J, Weber ER. The Structure and Electrical Properties of Au Contacts to GaAs Mrs Proceedings. 54. DOI: 10.1557/Proc-54-415 |
0.582 |
|
| 1985 |
Shih Y, Washburn J, Weber ER, Gronsky R. The Formation Of Amorphous Silicon By Light Ion Damage Mrs Proceedings. 45. DOI: 10.1557/Proc-45-65 |
0.585 |
|
| 1985 |
Fischer R, Masselink WT, Klem J, Henderson T, McGlinn TC, Klein MV, Morkoç H, Mazur JH, Washburn J. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy Journal of Applied Physics. 58: 374-381. DOI: 10.1063/1.335687 |
0.403 |
|
| 1985 |
Mazur J, Washburn J, Fischer R, Henderson T, Klem J, Masselink W, Kopp W, Morkoc H. TEM combined with AlxGa1−xAs As marker layers as a technique for the study of GaAs MBE growth Ultramicroscopy. 18: 371-377. DOI: 10.1016/0304-3991(85)90155-X |
0.353 |
|
| 1985 |
Liliental Z, Kocot C, Washburn J, Gronsky R. TEM investigation of titanium-silicide Schottky contacts on GaAs Ultramicroscopy. 18: 361-369. DOI: 10.1016/0304-3991(85)90154-8 |
0.588 |
|
| 1985 |
Sands T, Washburn J, Myers E, Sadana DK. On the origins of structural defects in BF 2+-implanted and rapid-thermally-annealed silicon: Conditions for defect-free regrowth Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 337-341. DOI: 10.1016/0168-583X(85)90577-4 |
0.597 |
|
| 1985 |
Sands T, Keramidas VG, Gronsky R, Washburn J. Ternary phases in the Pd-GaAs system: Implications for shallow contacts to GaAs Materials Letters. 3: 409-413. DOI: 10.1016/0167-577X(85)90089-8 |
0.667 |
|
| 1985 |
Sands T, Washburn J, Gronsky R. Crystallographic relationships between GaAs, As and Ga2O3 at the GaAs-thermal oxide interface Materials Letters. 3: 247-250. DOI: 10.1016/0167-577X(85)90066-7 |
0.665 |
|
| 1984 |
Maszara W, Sadana DK, Rozgonyi GA, Sands T, Washburn J, Wortman JJ. Dynamic Annealing Phenomena and the Origin of RTA-Induced “Hairpin” Dislocations Mrs Proceedings. 35. DOI: 10.1557/Proc-35-277 |
0.523 |
|
| 1984 |
Sands T, Washburn J, Gronsky R, Maszara W, Sadana DK, Rozgonyi GA. Near-surface defects formed during rapid thermal annealing of preamorphized and BF+2-implanted silicon Applied Physics Letters. 45: 982-984. DOI: 10.1063/1.95446 |
0.686 |
|
| 1984 |
Sands T, Sadana DK, Gronsky R, Washburn J. High resolution structural characterization of the amorphous-crystalline interface in Se+-implanted GaAs Applied Physics Letters. 44: 874-876. DOI: 10.1063/1.94963 |
0.688 |
|
| 1984 |
Sadana DK, Sands T, Washburn J. High resolution transmission electron microscopy study of Se+‐implanted and annealed GaAs: Mechanisms of amorphization and recrystallization Applied Physics Letters. 44: 623-625. DOI: 10.1063/1.94856 |
0.602 |
|
| 1984 |
Sadana DK, Choksi H, Washburn J, Byrne PF, Cheung NW. Recrystallization of amorphous gallium arsenide by ion beams Applied Physics Letters. 44: 301-303. DOI: 10.1063/1.94732 |
0.404 |
|
| 1984 |
Sands T, Washburn J, Gronsky R. Interface morphology and phase distribution in the Cu2-xS/CdS heterojunction: A transmission electron microscope investigation Solar Energy Materials. 10: 349-370. DOI: 10.1016/0165-1633(84)90041-8 |
0.649 |
|
| 1983 |
Sands T, Washburn J, Gronsky R. High Resolution Study of the Relationship Between Misfit Accommodation and Growth of CU 2-x S in Cds Mrs Proceedings. 31: 241. DOI: 10.1557/Proc-31-241 |
0.519 |
|
| 1983 |
Mazur JH, Washburn J. High resolution TEM studies of defects near Si-SiO/sub 2 interface Mrs Proceedings. 31: 14-17. DOI: 10.1557/Proc-31-105 |
0.331 |
|
| 1983 |
Sadana DK, Washburn J, Magee CW. Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface Journal of Applied Physics. 54: 3479-3484. DOI: 10.1063/1.332412 |
0.42 |
|
| 1983 |
Sadana DK, Wu NR, Washburn J, Morgan A, Reed D, Maenpaa M. The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted Si Nuclear Instruments and Methods in Physics Research. 743-750. DOI: 10.1016/0167-5087(83)90877-3 |
0.35 |
|
| 1983 |
Washburn J, Murty CS, Sadana D, Byrne P, Gronsky R, Cheung N, Kilaas R. The crystalline to amorphous transformation in silicon Nuclear Instruments and Methods in Physics Research. 209: 345-350. DOI: 10.1016/0167-5087(83)90821-9 |
0.601 |
|
| 1982 |
Sadana DK, Washburn J, Byrne PF, Cheung NW. Damage and in-situ annealing during ion implantation Mrs Proceedings. 14. DOI: 10.1557/Proc-14-511 |
0.362 |
|
| 1982 |
Sadana DK, Washburn J, Booker GR. Recrystallization of buried amorphous layers and associated electrical effects in P+-implanted Si Philosophical Magazine Part B. 46: 611-633. DOI: 10.1080/01418638208223548 |
0.435 |
|
| 1982 |
SANDS TD, WASHBURN J, GRONSKY R. HIGH RESOLUTION OBSERVATIONS OF COPPER VACANCY ORDERING IN CHALCOCITE (CU//2S) AND THE TRANSFORMATION TO DJURLEITE (CU//1//. //9//7 //T//O //1//. //9//4S) Phys Status Solidi A. 551-559. DOI: 10.1002/Pssa.2210720216 |
0.621 |
|
| 1981 |
Sadana DK, Strathman M, Washburn J, Booker GR. TRANSMISSION ELECTRON MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES OF SINGLE AND DOUBLE DISCRETE BURIED DAMAGE LAYERS IN P** plus IMPLANTED Si ON SUBSEQUENT LASER ANNEALING. Journal of Applied Physics. 52: 744-747. DOI: 10.1063/1.328756 |
0.386 |
|
| 1980 |
Sadana DK, Washburn J, Strathman MD, Booker GR, Badawi MH. Effects Of Damage-Impurity Interaction On Electrical Properties of Se+-Implanted GaAs Mrs Proceedings. 2. DOI: 10.1557/Proc-2-515 |
0.368 |
|
| 1980 |
Washburn J. Formation and Effects of Secondary Defects in Ion implanted Silicon Mrs Proceedings. 2: 209. DOI: 10.1557/Proc-2-209 |
0.378 |
|
| 1980 |
Sadana DK, Wilson MC, Booker GR, Washburn J. REGROWTH BEHAVIOR OF THREE DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED AND SUBSEQUENTLY LASER ANNEALED Si Journal of the Electrochemical Society. 127: 1589-1591. DOI: 10.1149/1.2129957 |
0.316 |
|
| 1980 |
Sadana DK, Strathman M, Washburn J, Magee CW, Mäenpää M, Booker GR. Effect on electrical properties of segregation of implanted P+ at defect sites in Si Applied Physics Letters. 37: 615-618. DOI: 10.1063/1.92038 |
0.398 |
|
| 1980 |
Sadana DK, Strathman M, Washburn J, Booker GR. On the comparison of transmission electron microscopy and channeled Rutherford backscattering techniques to evaluate the multilayer subsurface damage structures Applied Physics Letters. 37: 234-236. DOI: 10.1063/1.91836 |
0.325 |
|
| 1980 |
Sadana DK, Stratham M, Washburn J, Booker GR. TRANSMISSION ELECTRON MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES OF DIFFERENT DAMAGE STRUCTURES IN p+ IMPLANTED Si Journal of Applied Physics. 51: 5718-5724. DOI: 10.1063/1.327579 |
0.351 |
|
| 1980 |
Sadana DK, Strathman M, Washburn J, Booker GR. TEM AND RBS STUDIES OF SINGLE AND DOUBLE DISCRETE BURIED DAMAGE LAYERS IN P+-IMPLANTED Si ON SUBSEQUENT LASER ANNEALING Journal of Applied Physics. 454-460. DOI: 10.1016/B978-0-12-746850-1.50068-2 |
0.337 |
|
| 1977 |
Wu W, Washburn J. On the climb of dislocations in boron‐ion‐implanted silicon Journal of Applied Physics. 48: 3747-3751. DOI: 10.1063/1.324293 |
0.365 |
|
| 1977 |
Wu W, Washburn J. On the shrinkage of rod‐shaped defects in boron‐ion‐implanted silicon Journal of Applied Physics. 48: 3742-3746. DOI: 10.1063/1.324292 |
0.385 |
|
| 1974 |
Wu W, Washburn J. Identification of interstitial‐ and vacancy‐type dislocation loops in ion‐implanted silicon Journal of Applied Physics. 45: 1085-1090. DOI: 10.1063/1.1663371 |
0.321 |
|
| 1973 |
Narayan J, Washburn J. Self diffusion in magnesium oxide Acta Metallurgica. 21: 533-538. DOI: 10.1016/0001-6160(73)90060-6 |
0.418 |
|
| 1972 |
Narayan J, Washburn J. SELF-CLIMB OF DISLOCATION LOOPS IN MAGNESIUM OXIDE Phil Mag. 26: 1179-1190. DOI: 10.1080/14786437208227372 |
0.42 |
|
| 1972 |
Narayan J, Washburn J. Stability of dislocation loops near a free surface Journal of Applied Physics. 43: 4862-4865. DOI: 10.1063/1.1661038 |
0.449 |
|
| 1969 |
Vellaikal G, Washburn J. Preyield Plastic Deformation in Copper Polycrystals Journal of Applied Physics. 40: 2280-2286. DOI: 10.1063/1.1657973 |
0.315 |
|
| 1968 |
Tartour J, Washburn J. Climb kinetics of dislocation loops in aluminium Philosophical Magazine. 18: 1257-1267. DOI: 10.1080/14786436808227755 |
0.31 |
|
| 1967 |
Cooper RE, Washburn J. Stress-induced movement of twin boundaries in zinc Acta Metallurgica. 15: 639-647. DOI: 10.1016/0001-6160(67)90107-1 |
0.305 |
|
| 1966 |
Washburn J, Cass T. DISLOCATION DIPOLES IN MgO Le Journal De Physique Colloques. 27. DOI: 10.1051/Jphyscol:1966321 |
0.309 |
|
| 1965 |
Das G, Washburn J. Defects formed from excess vacancies in aluminum Philosophical Magazine. 11: 955-967. DOI: 10.1080/14786436508223957 |
0.329 |
|
| 1964 |
Strudel JL, Washburn J. Direct observations of interactions between imperfect loops and moving dislocations in aluminium Philosophical Magazine. 9: 491-506. DOI: 10.1080/14786436408222960 |
0.342 |
|
| 1964 |
Tinder RF, Washburn J. The initiation of plastic flow in copper Acta Metallurgica. 12: 129-137. DOI: 10.1016/0001-6160(64)90180-4 |
0.314 |
|
| 1963 |
Subramanian KN, Washburn J. Fatigue Deformation of Magnesium Oxide Journal of Applied Physics. 34: 3394-3397. DOI: 10.1063/1.1729198 |
0.32 |
|
| 1960 |
Vandervoort R, Washburn J. On the stability of the dislocation substructure in quenched aluminium Philosophical Magazine. 5: 24-29. DOI: 10.1080/14786436008241197 |
0.326 |
|
| 1958 |
Washburn J, Nadeau J. On the formation of dislocation substructure during growth of a crystal from its melt Acta Metallurgica. 6: 665-673. DOI: 10.1016/0001-6160(58)90057-9 |
0.346 |
|
| 1958 |
Parker ER, Pask JA, Washburn J, Gorum AE, Luhman W. Ductile ceramics — A high temperature possibility Jom. 10: 351-353. DOI: 10.1007/Bf03398218 |
0.597 |
|
| 1955 |
Washburn J. Effect Of The Structure Of Dislocation Boundaries On Yield Strength Jom. 7: 675-681. DOI: 10.1007/Bf03377559 |
0.332 |
|
| 1954 |
Bainbridge DW, Li CH, Edwards EH, Washburn J, Parker ER. Recent Observations On The Motion Of Small Angle Dislocation Boundaries Acta Metallurgica. 2: 322-333. DOI: 10.1016/0001-6160(54)90175-3 |
0.609 |
|
| 1953 |
Li CH, Edwards EH, Washburn J, Parker ER. Stress-induced movement of crystal boundaries Acta Metallurgica. 1: 223-229. DOI: 10.1016/0001-6160(53)90062-5 |
0.61 |
|
| 1952 |
Washburn J, Parker ER. Kinking in Zinc Single-Crystal Tension Specimens Jom. 4: 1076-1078. DOI: 10.1007/Bf03397774 |
0.606 |
|
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