Year |
Citation |
Score |
2018 |
Wan Z, Mohammad H, Zhao Y, Darling RB, Anantram MP. Bipolar Resistive Switching Characteristics of Thermally Evaporated V2O5 Thin Films Ieee Electron Device Letters. 39: 1290-1293. DOI: 10.1109/Led.2018.2855199 |
0.312 |
|
2017 |
Wan Z, Darling RB, Anantram MP. Vanadium Oxide Based RRAM Device Mrs Advances. 2: 3019-3024. DOI: 10.1557/Adv.2017.442 |
0.347 |
|
2017 |
Wan Z, Darling RB, Majumdar A, Anantram MP. A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure Applied Physics Letters. 111: 041601. DOI: 10.1063/1.4995411 |
0.327 |
|
2015 |
Wan Z, Darling RB, Anantram MP. Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film. Physical Chemistry Chemical Physics : Pccp. PMID 26529244 DOI: 10.1039/C5Cp04755B |
0.354 |
|
2015 |
Wu HH, Wei CL, Hsu YC, Darling RB. Adaptive peak-inductor-current-controlled PFM boost converter with a near-threshold startup voltage and high efficiency Ieee Transactions On Power Electronics. 30: 1956-1965. DOI: 10.1109/Tpel.2014.2323895 |
0.312 |
|
2015 |
Lam LL, Darling RB. Determining the optimal discharge strategy for a lithium-ion battery using a physics-based model Journal of Power Sources. 276: 195-202. DOI: 10.1016/J.Jpowsour.2014.11.099 |
0.547 |
|
2009 |
Darling RB, Iwanaga S. Structure, properties, and MEMS and microelectronic applications of vanadium oxides Sadhana - Academy Proceedings in Engineering Sciences. 34: 531-542. DOI: 10.1007/S12046-009-0025-X |
0.513 |
|
2007 |
Iwanaga S, Marciniak M, Darling RB, Ohuchi FS. Thermopower and electrical conductivity of sodium-doped V2O 5 thin films Journal of Applied Physics. 101. DOI: 10.1063/1.2739311 |
0.536 |
|
2005 |
Iwanaga S, Darling RB, Cobden DH. Stable and erasable patterning of vanadium pentoxide thin films by atomic force microscope nanolithography Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1896100 |
0.52 |
|
2002 |
Azadeh M, Darling RB. Power control of VCSEL arrays using monolithically integrated focal plane detectors Journal of Lightwave Technology. 20: 1478-1484. DOI: 10.1109/Jlt.2002.800805 |
0.32 |
|
2000 |
Azadeh M, Darling RB, Babbitt WR. Model for optoelectronically interconnected smart pixel arrays Journal of Lightwave Technology. 18: 1437-1443. DOI: 10.1109/50.887196 |
0.322 |
|
1999 |
Azadeh M, Darling RB, Babbitt WR. Characteristics of optoelectronic feedback for smart pixels with smart illumination Ieee Journal On Selected Topics in Quantum Electronics. 5: 172-177. DOI: 10.1109/2944.778277 |
0.317 |
|
1998 |
Zurek SJ, Darling RB, Kuhn KJ, Foisy MC. Elevated temperature performance of pseudomorphic AlGaAs/InGaAs MODFET's Ieee Transactions On Electron Devices. 45: 2-8. DOI: 10.1109/16.658804 |
0.314 |
|
1997 |
Suh JW, Glander SF, Darling RB, Storment CW, Kovacs GT. Organic thermal and electrostatic ciliary microactuator array for object manipulation Sensors and Actuators a: Physical. 58: 51-60. DOI: 10.1016/S0924-4247(97)80224-5 |
0.3 |
|
1996 |
Darling RB. Current-voltage characteristics of schottky barrier diodes with dynamic interfacial defect state occupancy Ieee Transactions On Electron Devices. 43: 1153-1160. DOI: 10.1109/16.502427 |
0.328 |
|
1995 |
Darling RB. A Full Dynamic Model for pn-Junction Diode Switching Transients Ieee Transactions On Electron Devices. 42: 969-976. DOI: 10.1109/16.381996 |
0.313 |
|
1994 |
Nilson CD, Darling RB. Shunting Neural Network Photodetector Arrays in Analog CMOS Ieee Journal of Solid-State Circuits. 29: 1291-1296. DOI: 10.1109/4.315217 |
0.312 |
|
1993 |
Darling RB. Electrostatic and current transport properties of n+/semi- insulating GaAs junctions Journal of Applied Physics. 74: 4571-4589. DOI: 10.1063/1.354376 |
0.333 |
|
1992 |
Darling RB, Youn HJ, Kuhn KJ. Use of Active Loads with MSM Photodetectors in Digital GaAs MESFET Photoreceivers Journal of Lightwave Technology. 10: 1597-1605. DOI: 10.1109/50.184898 |
0.335 |
|
1992 |
Samaras JE, Darling RB. Effects of low work function metals on the barrier height of sulfide-treated n-type GaAs(100) Journal of Applied Physics. 72: 168-173. DOI: 10.1063/1.352153 |
0.314 |
|
1991 |
Johnson MJ, Kuhn KJ, Darling RB. Effect of etch treatment prior to Schottky contact fabrication on In 0.05Ga0.95As Applied Physics Letters. 58: 1893-1895. DOI: 10.1063/1.105065 |
0.321 |
|
1990 |
Al-Alusi MR, Darling RB. Influence of high-level injection on the impedance characteristics of GaAs-AlxGa1-xAs double-heterostructure laser diodes Journal of Applied Physics. 67: 2127-2135. DOI: 10.1063/1.345547 |
0.308 |
|
1990 |
Darling RB. Surface sensitivity and bias dependence of narrow-gap metal-semiconductor- metal photodetectors Journal of Applied Physics. 67: 3152-3162. DOI: 10.1063/1.345394 |
0.334 |
|
1989 |
Darling RB, Ray S, Nabet B, Carter EL, Samaras JE. Epitaxial n+ Layer GaAs Mesa-Finger Interdigital Surface Photodetectors Ieee Electron Device Letters. 10: 461-463. DOI: 10.1109/55.43100 |
0.316 |
|
1989 |
Darling RB. Subthreshold Conduction in Uniformly Doped Epitaxial GaAs MESFET's Ieee Transactions On Electron Devices. 36: 1264-1273. DOI: 10.1109/16.30931 |
0.322 |
|
1987 |
Darling RB, Uyemura JP. Optical Gain and Large-Signal Characteristics of Illuminated GaAs MESFET's Ieee Journal of Quantum Electronics. 23: 1160-1171. DOI: 10.1109/Jqe.1987.1073485 |
0.32 |
|
1987 |
Darling RB. Analysis of Microwave Characteristics of Photoconductive IC Structures Journal of Lightwave Technology. 5: 325-339. DOI: 10.1109/Jlt.1987.1075508 |
0.306 |
|
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