Salah Bedair - Publications

Affiliations: 
Electrical and Computer Engineering North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Optics Physics

144 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Sayed IEH, Carlin CZ, Hagar BG, Colter PC, Bedair SM. Strain-Balanced InGaAsP/GaInP Multiple Quantum Well Solar Cells with a Tunable Bandgap (1.65-1.82 eV) Ieee Journal of Photovoltaics. 6: 997-1003. DOI: 10.1109/JPHOTOV.2016.2549745  0.84
2016 Bedair SM, Harmon JL, Carlin CZ, Hashem Sayed IE, Colter PC. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface Applied Physics Letters. 108. DOI: 10.1063/1.4951690  0.84
2016 Hashem IE, Zachary Carlin C, Hagar BG, Colter PC, Bedair SM. InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties Journal of Applied Physics. 119. DOI: 10.1063/1.4943366  0.84
2016 El-Masry NA, Zavada JM, Nepal N, Bedair SM. Ferromagnetic behavior in transition metal-doped III-N semiconductors Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics. 395-433. DOI: 10.1016/B978-0-08-100041-0.00012-3  0.84
2015 Sayed IEH, Carlin CZ, Hagar B, Colter PC, Bedair SM. Tunable GaInP solar cell lattice matched to GaAs 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356081  0.84
2015 Van Den Broeck DM, Bharrat D, Liu Z, El-Masry NA, Bedair SM. Growth and Characterization of High-Quality, Relaxed In<inf>y</inf>Ga<inf>1−y</inf>N Templates for Optoelectronic Applications Journal of Electronic Materials. 44: 4161-4166. DOI: 10.1007/S11664-015-3989-9  0.84
2014 You G, Liu J, Jiang Z, Wang L, El-Masry NA, Hosalli AM, Bedair SM, Xu J. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires. Optics Letters. 39: 1501-4. PMID 24690823 DOI: 10.1364/Ol.39.001501  0.84
2014 Bradshaw GK, Samberg JP, Carlin CZ, Colter PC, Edmondson KM, Hong W, Fetzer C, Karam N, Bedair SM. GaInP/GaAs tandem solar cells with InGaAs/GaAsP multiple quantum wells Ieee Journal of Photovoltaics. 4: 614-619. DOI: 10.1109/Jphotov.2013.2294750  0.84
2014 Van Den Broeck DM, Bharrat D, Hosalli AM, El-Masry NA, Bedair SM. Strain-balanced InGaN/GaN multiple quantum wells Applied Physics Letters. 105. DOI: 10.1063/1.4890738  0.84
2014 Bain LE, Hosalli AM, Bedair SM, Paskova T, Ivanisevic A. Molecular interactions on InxGa1-xN Conference Proceedings of the Society For Experimental Mechanics Series. 5: 109-114. DOI: 10.1007/978-3-319-00780-9_14  0.84
2013 Bain LE, Jewett SA, Mukund AH, Bedair SM, Paskova TM, Ivanisevic A. Biomolecular gradients via semiconductor gradients: characterization of amino acid adsorption to InxGa1-xN surfaces. Acs Applied Materials & Interfaces. 5: 7236-43. PMID 23841643 DOI: 10.1021/Am4015555  0.84
2013 Carlin CZ, Bradshaw GK, Samberg JP, Colter PC, Bedair SM. Minority carrier transport and their lifetime in InGaAs/GaAsP multiple quantum well structures Ieee Transactions On Electron Devices. 60: 2532-2536. DOI: 10.1109/Ted.2013.2268421  0.84
2013 Hauser J, Carlin Z, Harmon J, Bradshaw G, Samberg J, Colter P, Bedair S. Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier Conference Record of the Ieee Photovoltaic Specialists Conference. 2082-2085. DOI: 10.1109/PVSC.2013.6744883  0.84
2013 Samberg JP, Bradshaw GK, Carlin CZ, Colter PC, Edmondson K, Hong W, Fetzer C, Karam N, El-Masry NA, Bedair SM. Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures Conference Record of the Ieee Photovoltaic Specialists Conference. 1737-1740. DOI: 10.1109/PVSC.2013.6744479  0.84
2013 Bradshaw GK, Carlin CZ, Samberg JP, Colter PC, Bedair SM. Determination of carrier recombination lifetime in InGaAs quantum wells from external quantum efficiency measurements Conference Record of the Ieee Photovoltaic Specialists Conference. 264-267. DOI: 10.1109/PVSC.2013.6744143  0.84
2013 Bradshaw GK, Carlin CZ, Samberg JP, El-Masry NA, Colter PC, Bedair SM. Carrier transport and improved collection in thin-barrier InGaAs/GaAsP strained quantum well solar cells Ieee Journal of Photovoltaics. 3: 278-283. DOI: 10.1109/Jphotov.2012.2216858  0.84
2013 Hosalli AM, Van Den Broeck DM, Bharrat D, El-Masry NA, Bedair SM. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes Applied Physics Letters. 103. DOI: 10.1063/1.4841755  0.84
2013 Roberts AT, Mohanta A, Everitt HO, Leach JH, Van Den Broeck D, Hosalli AM, Paskova T, Bedair SM. Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates Applied Physics Letters. 103. DOI: 10.1063/1.4827536  0.84
2013 Samberg JP, Zachary Carlin C, Bradshaw GK, Colter PC, Harmon JL, Allen JB, Hauser JR, Bedair SM. Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells Applied Physics Letters. 103. DOI: 10.1063/1.4819917  0.84
2013 Bharrat D, Hosalli AM, Van Den Broeck DM, Samberg JP, Bedair SM, El-Masry NA. Gallium nitride nanowires by maskless hot phosphoric wet etching Applied Physics Letters. 103. DOI: 10.1063/1.4819272  0.84
2013 Samberg JP, Alipour HM, Bradshaw GK, Zachary Carlin C, Colter PC, Lebeau JM, El-Masry NA, Bedair SM. Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures Applied Physics Letters. 103. DOI: 10.1063/1.4818548  0.84
2013 Frajtag P, Nepal N, Paskova T, Bedair SM, El-Masry NA. Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy Journal of Crystal Growth. 367: 88-93. DOI: 10.1016/J.Jcrysgro.2012.12.039  0.84
2013 Samberg JP, Carlin CZ, Bradshaw GK, Colter PC, Bedair SM. Growth and characterization of in x Ga1-x As/GaAs1-y P y strained-layer superlattices with high values of y (∼80%) Journal of Electronic Materials. 42: 912-917. DOI: 10.1007/S11664-012-2375-0  0.84
2012 Carlin CZ, Bradshaw GK, Samberg JP, Colter PC, El-Masry NA, Bedair SM. The optimization of high indium and high phosphorus content InGaAs/GaAsP strained layer superlattices for use in multijunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1456-1460. DOI: 10.1109/PVSC.2012.6317871  0.84
2012 Hosalli AM, Frajtag P, Van Den Broeck DM, Paskova T, El-Masry NA, Bedair SM. Comparative study of LEDs conformally overgrown on multi-facet GaN NWs vs. conventional c-plane LEDs Device Research Conference - Conference Digest, Drc. 141-142. DOI: 10.1109/DRC.2012.6257004  0.84
2012 Frajtag P, Hosalli AM, Samberg JP, Colter PC, Paskova T, El-Masry NA, Bedair SM. Overgrowth of GaN on GaN nanowires produced by mask-less etching Journal of Crystal Growth. 352: 203-208. DOI: 10.1016/J.Jcrysgro.2011.12.055  0.84
2011 Frajtag P, El-Masry N, Bedair S, Hosalli A, Bradshaw G. Growing thin films that contain embedded voids Spie Newsroom. DOI: 10.1117/2.1201105.003750  0.48
2011 Frajtag P, Hosalli AM, Bradshaw GK, Nepal N, El-Masry NA, Bedair SM. Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires Applied Physics Letters. 98. DOI: 10.1063/1.3572032  0.84
2011 Frajtag P, El-Masry NA, Nepal N, Bedair SM. Embedded voids approach for low defect density in epitaxial GaN films Applied Physics Letters. 98. DOI: 10.1063/1.3540680  0.84
2011 Frajtag P, Samberg JP, El-Masry NA, Nepal N, Bedair SM. Embedded voids formation by overgrowth on gaN nanowires for high-quality gaN films Journal of Crystal Growth. 322: 27-32. DOI: 10.1016/J.Jcrysgro.2011.02.032  0.84
2011 Liliental-Weber Z, Ogletree DF, Yu KM, Hawkridge M, Domagala JZ, Bak-Misiuk J, Berman AE, Emara A, Bedair S. Structural defects and cathodoluminescence of InxGa1-xN layers Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2248-2250. DOI: 10.1002/Pssc.201001087  0.84
2011 Emar AM, Berkman EA, Zavada J, El-Masry NA, Bedair SM. Strain relaxation in inxga1-xn/gan quantum well structures Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2034-2037. DOI: 10.1002/Pssc.201000984  0.84
2011 Nepal N, Frajtag P, Zavada JM, El-Masry NA, Bedair SM. Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2354-2356. DOI: 10.1002/Pssc.201000983  0.84
2011 Colter PC, Carlin CZ, Samberg JP, Bradshaw GK, Bedair SM. Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices Physica Status Solidi (a) Applications and Materials Science. 208: 2884-2888. DOI: 10.1002/Pssa.201026624  0.84
2010 Samberg JP, Carlin CZ, El-Masry NA, Bradshaw GK, Colter PC, Harmon J, Bedair SM, Hauser JR. Characterization of strained layer superlattice solar cells by X-ray diffraction and current-voltage measurements Materials Research Society Symposium Proceedings. 1211: 103-108. DOI: 10.1557/Proc-1211-R11-09  0.84
2010 Bradshaw GK, Carlin CZ, Colter PC, Harmon JL, Samberg JP, Bedair SM. Effects of barrier width on spectral response of strained layer superlattices for high efficiency solar cells Materials Research Society Symposium Proceedings. 1211: 7-13. DOI: 10.1557/Proc-1211-R02-08  0.84
2010 Jung D, Carlin CZ, Hauser JR, Bedair SM. Analysis of tunnel junction suitable for 4000 suns in tandem high efficiency solar cell structure Materials Research Society Symposium Proceedings. 1210: 81-86. DOI: 10.1557/Proc-1210-Q04-03  0.84
2010 Bedair S, Zavada J, El-Masry N. A spin to remember Ieee Spectrum. 47: 45-49. DOI: 10.1109/Mspec.2010.5605892  0.84
2010 Hauser JR, Carlin Z, Bedair SM. Modeling of tunnel junctions for high efficiency solar cells Applied Physics Letters. 97. DOI: 10.1063/1.3469942  0.84
2010 Cotal HL, Law DC, Karam NH, Bedair SM. Recent development in high efficiency multijunction solar cell technology Physics of Nanostructured Solar Cells. 249-267.  0.84
2010 Nepal N, Oliver Luen M, Frajtag P, Zavada JM, Bedair SM, El-Masry NA. Manipulation of room temperature ferromagnetic behavior of GaMnN epilayers Materials Research Society Symposium Proceedings. 1198: 51-56.  0.84
2009 Luen MO, Nepal N, Frajtag P, Zavada JM, Brown E, Hommerich U, Bedair SM, El-Masry NA. Ferromagnetism and near-infrared luminescence in neodymium and erbium doped gallium nitride via diffusion Materials Research Society Symposium Proceedings. 1183: 45-50. DOI: 10.1557/Proc-1183-Ff06-01  0.84
2009 Nepal N, Luen MO, Zavada JM, Bedair SM, Frajtag P, El-Masry NA. Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films Applied Physics Letters. 94. DOI: 10.1063/1.3110963  0.84
2009 Liliental-Weber Z, Yu KM, Hawkridge M, Bedair S, Berman AE, Emara A, Khanal DR, Wu J, Domagala J, Bak-Misiuk J. Structural perfection of InGaN layers and its relation to photoluminescence Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 2626-2631. DOI: 10.1002/Pssc.200982555  0.84
2009 Liliental-Weber Z, Yu KM, Hawkridge M, Bedair S, Berman AE, Emara A, Domagala J, Bak-Misiuk J. Spontaneous stratification of InGaN layers and its influence on optical properties Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S433-S436. DOI: 10.1002/Pssc.200880985  0.84
2008 Berkman EA, El-Masry NA, Emara A, Bedair SM. Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range Applied Physics Letters. 92. DOI: 10.1063/1.2896648  0.84
2007 El-Masry NA, Arkun FE, Berkman EA, Mahrous A, Zavada JM, Bedair SM. Fermi level and magnetic GaMnN thin films Ecs Transactions. 3: 423-427. DOI: 10.1149/1.2753274  0.84
2007 Nepal N, Mahros AM, Bedair SM, El-Masry NA, Zavada JM. Correlation between photoluminescence and magnetic properties of GaMnN films Applied Physics Letters. 91. DOI: 10.1063/1.2823602  0.84
2007 Nepal N, Bedair SM, El-Masry NA, Lee DS, Steckl AJ, Zavada JM. Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys Applied Physics Letters. 91. DOI: 10.1063/1.2817741  0.84
2007 Mahros AM, Luen MO, Emara A, Bedair SM, Berkman EA, El-Masry NA, Zavada JM. Magnetic and magnetotransport properties of (AlGaN/GaN):Mg/(GaMnN) heterostructures at room temperature Applied Physics Letters. 90. DOI: 10.1063/1.2749717  0.84
2007 Barletta PT, Berkman EA, Moody BF, El-Masry NA, Emara AM, Reed MJ, Bedair SM. Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures Applied Physics Letters. 90. DOI: 10.1063/1.2721133  0.84
2007 Mahros AM, Luen MO, Emara A, Berkman EA, Bedair SM, El-Masry NA. Anomalous hall effect measurements in GaMnN-based multi-layered structures Materials Research Society Symposium Proceedings. 999: 8-13.  0.84
2007 Mahros AM, Luen MO, Emara A, Berkman EA, Arkun FE, Zhang X, Muth J, El-Masry NA, Bedair SM. Correlations between optical transmission and magnetic properties of doped and undoped GaMnN Materials Research Society Symposium Proceedings. 999: 88-92.  0.84
2006 Barletta PT, Berkman EA, Emara AM, Reed MJ, Moody BF, El-Masry NA, Bedair SM. Development of yellow and white LED's using InGaN-based multi-quantum well structures Ecs Transactions. 3: 315-321. DOI: 10.1149/1.2357220  0.84
2006 Arkun FE, El-Masry NA, Muth J, Xiyao Z, Mahrouse A, Zavada J, Bedair SM. Optical transmission measurements on MOCVD grown GaMnN films on sapphire Materials Research Society Symposium Proceedings. 955: 156-161.  0.84
2005 Reed MJ, Arkun FE, Berkman EA, Elmasry NA, Zavada J, Luen MO, Reed ML, Bedair SM. Effect of doping on the magnetic properties of GaMnN: Fermi level engineering Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1881786  0.84
2005 Elmasry NA, Hunter M, Elnaggar A, Bedair SM. Five-nanometer thick silicon on insulator layer Journal of Applied Physics. 98. DOI: 10.1063/1.1803625  0.84
2005 Reed ML, Reed MJ, Luen MO, Berkman EA, Arkun FE, Bedair SM, Zavada JM, El-Masry NA. Magnetic properties of Mn-doped GaN and p-i-n junctions Physica Status Solidi C: Conferences. 2: 2403-2406. DOI: 10.1002/Pssc.200461517  0.84
2005 Arkun FE, Reed MJ, Berkman EA, El-Masry NA, Zavada JM, Luen MO, Reed ML, Bedair SM. Evidence of carrier mediated ferromagnetism in GaN:Mn/GaN:Mg heterostructures Materials Research Society Symposium Proceedings. 831: 503-508.  0.84
2005 Reed MJ, Luen MO, Reed ML, Bedair SM, Arkun FE, Berkman EA, Elmasry NA, Zavada J. The dependence of the magnetic properties of GaMnN on codoping by Mg and Si Materials Research Society Symposium Proceedings. 834: 249-253.  0.84
2005 Berkman EA, Reed MJ, Arkun FE, El-Masry NA, Zavada JM, Luen MO, Reed ML, Bedair SM. The effect of Mn concentration on curie temperature and magnetic behavior of MOCVD grown GaMnN films Materials Research Society Symposium Proceedings. 834: 255-260.  0.84
2004 Xiao D, Kim KW, Bedair SM, Zavada JM. Analysis of nitride-based quantum well LEDs and novel white LED design Proceedings of Spie - the International Society For Optical Engineering. 5366: 85-96. DOI: 10.1117/12.524424  0.84
2004 Reed ML, Reed MJ, Jagannadham K, Verghese K, Bedair SM, El-Masry N, Butler JE. Electrical characterization of 10B doped diamond irradiated with low thermal neutron fluence Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 1191-1194. DOI: 10.1116/1.1763910  0.84
2004 Arkun FE, Reed MJ, Berkman EA, El-Masry NA, Zavada JM, Reed ML, Bedair SM. Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN:Mg Interface Applied Physics Letters. 85: 3809-3811. DOI: 10.1063/1.1810216  0.84
2004 Xiao D, Kim KW, Bedair SM, Zavada JM. Design of white light-emitting diodes using InGaN/AllnGaN quantum-well structures Applied Physics Letters. 84: 672-674. DOI: 10.1063/1.1644920  0.84
2003 Reed ML, Berkman EA, Reed MJ, Arkun PE, Chikyow T, Bedair SM, Zavada JM, El-Masry NA. Magnetic properties of Mn-doped GaN, InGaN, and AlGaN Materials Research Society Symposium - Proceedings. 798: 563-568.  0.84
2002 Roberts JC, Moody BF, Barletta P, Aumer ME, LeBoeuf SF, Luther JM, Bedair SM. Growth of high nitrogen content GaAsN by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 692: 29-34. DOI: 10.1557/Proc-692-H1.9.1  0.84
2002 Aumer ME, Leboeuf SF, Moody BF, Bedair SM, Nam K, Lin JY, Jiang HX. Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures Applied Physics Letters. 80: 3099-3101. DOI: 10.1063/1.1469219  0.84
2002 Moody BF, Barletta PT, El-Masry NA, Roberts JC, Aumer ME, Leboeuf SF, Bedair SM. Effect of H2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0≤y≤0.08) Applied Physics Letters. 80: 2475-2477. DOI: 10.1063/1.1464225  0.84
2002 Roberts JC, Parker CA, Muth JF, Leboeuf SF, Aumer ME, Bedair SM, Reed MJ. Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from in xGa 1-xN (0 ≤ x ≤ 0.13) Journal of Electronic Materials. 31: L1-L6. DOI: 10.1007/S11664-002-0179-3  0.84
2001 Reed ML, El-Masry NA, Stadelmaier HH, Ritums MK, Reed MJ, Parker CA, Roberts JC, Bedair SM. Room temperature ferromagnetic properties of (Ga, Mn)N Applied Physics Letters. 79: 3473-3475. DOI: 10.1063/1.1419231  0.84
2001 Aumer ME, LeBoeuf SF, Moody BF, Bedair SM. Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells Applied Physics Letters. 79: 3803-3805. DOI: 10.1063/1.1418453  0.84
2001 El-Masry NA, Behbehani MK, LeBoeuf SF, Aumer ME, Roberts JC, Bedair SM. Self-assembled AlInGaN quaternary superlattice structures Applied Physics Letters. 79: 1616-1618. DOI: 10.1063/1.1400763  0.84
2001 Alexson D, Bergman L, Nemanich RJ, Dutta M, Stroscio MA, Parker CA, Bedair SM, El-Masry NA, Adar F. Ultraviolet Raman study of A1(LO) and E2 phonons in InxGa1-xN alloys Journal of Applied Physics. 89: 798-800. DOI: 10.1063/1.1330760  0.84
2001 Reed ML, Ritums MK, Stadelmaier HH, Reed MJ, Parker CA, Bedair SM, El-Masry NA. Room temperature magnetic (Ga,Mn)N: A new material for spin electronic devices Materials Letters. 51: 500-503. DOI: 10.1016/S0167-577X(01)00342-1  0.84
2001 Liliental-Weber Z, Benamara M, Washburn J, Domagala JZ, Bak-Misiuk J, Piner EL, Roberts JC, Bedair SM. Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies Journal of Electronic Materials. 30: 439-444. DOI: 10.1007/S11664-001-0056-5  0.84
2001 Alexson D, Bergman L, Nemanich RJ, Dutta M, Stroscio MA, Parker CA, Bedair SM, El-Masry NA, Adar F. UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates Materials Research Society Symposium - Proceedings. 639: G9.7.1-G9.7.6.  0.84
2000 Liliental-Weber Z, Benamara M, Jasinski J, Swider W, Washburn J, Grzegory I, Porowski S, Bak-Misiuk J, Domagala J, Bedair S, Eiting CI, Dupuis RD. Influence of Mg and In on defect formation in GaN: Bulk and MOCVD grown samples Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 2000: 3-10. DOI: 10.1109/SIM.2000.939187  0.84
2000 Bedair SM, Roberts JC, Jung D, Moody BF, El-Masry NA, Katsuyama T. GaAsP/InGaAsN strained layer superlattices for solar cell applications Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 1269-1272. DOI: 10.1109/PVSC.2000.916121  0.84
2000 Bedair SM, Roberts JC, Jung D, Moody BF, El-Masry NA, Katsuyama T. Analysis of p+-AlGaAs/n+-InGaP tunnel junction for high solar concentration cascade solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 1154-1156. DOI: 10.1109/PVSC.2000.916092  0.84
2000 Aumer ME, LeBoeuf SF, Bedair SM, Smith M, Lin JY, Jiang HX. Effects of tensile and compressive strain on the luminescence properties of AllnGaN/lnGaN quantum well structures Applied Physics Letters. 77: 821-823. DOI: 10.1063/1.1306648  0.84
2000 LeBoeuf SF, Aumer ME, Bedair SM. Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells Applied Physics Letters. 77: 97-99. DOI: 10.1063/1.126889  0.84
2000 Reed ML, Liu SX, Roberts JC, Stadelmaier HH, Bedair SM, El-Masry NA. Planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs Journal of Magnetism and Magnetic Materials. 218: 177-181. DOI: 10.1016/S0304-8853(00)00403-0  0.84
2000 Reed MJ, El-Masry NA, Parker CA, Roberts JC, Bedair SM. Critical layer thickness determination of GaN/InGaN/GaN double heterostructures Applied Physics Letters. 77: 4121-4123.  0.84
2000 Liu SX, Bedair SM, El-Masry NA. Mn-prelayer effects on the epitaxial growth of MnSb on (111) B GaAs by pulsed laser deposition Materials Letters. 42: 121-129.  0.84
2000 Robins LH, Armstrong JT, Marinenko RB, Vaudin MD, Bouldin CE, Woicik JC, Paul AJ, Thurber WR, Miyano KE, Parker CA, Roberts JC, Bedair SM, Piner EL, Reed MJ, El-Masry NA, et al. Optical and structural studies of compositional inhomogeneity in strain-relaxed indium gallium nitride films Ieee International Symposium On Compound Semiconductors, Proceedings. 507-512.  0.84
2000 Hunter ME, Reed MJ, El-Masry NA, Roberts JC, Bedair SM. Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation Applied Physics Letters. 76: 1935-1937.  0.84
1999 Joshkin VA, Parker CA, Bedair SM, Muth JF, Shmagin IK, Kolbas RM, Piner EL, Molnar RJ. Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy Journal of Applied Physics. 86: 281-288. DOI: 10.1063/1.370727  0.84
1999 Parker CA, Roberts JC, Bedair SM, Reed MJ, Liu SX, El-Masry NA, Robins LH. Optical band gap dependence on composition and thickness of InxGa1-xN (0Applied Physics Letters. 75: 2566-2568. DOI: 10.1063/1.125079  0.84
1999 Behbehani MK, Piner EL, Liu SX, El-Masry NA, Bedair SM. Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition Applied Physics Letters. 75: 2202-2204. DOI: 10.1063/1.124964  0.84
1999 Robins LH, Paul AJ, Parker CA, Roberts JC, Bedair SM, Piner EL, El-Masry NA. Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films Materials Research Society Symposium - Proceedings. 537: G3.22.  0.84
1999 Aumer ME, LeBoeuf SF, McIntosh FG, Bedair SM. High optical quality AlInGaN by metalorganic chemical vapor deposition Applied Physics Letters. 75: 3315-3317.  0.84
1999 Parker CA, Roberts JC, Bedair SM, Reed MJ, Liu SX, El-Masry NA. Determination of the critical layer thickness in the InGaN/GaN heterostructures Applied Physics Letters. 75: 2776-2778.  0.84
1998 Joshkin VA, Parker CA, Bedair SM, Krasnobaev LY, Cuomo JJ, Davis RF, Suvkhanov A. Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC Applied Physics Letters. 72: 2838-2840. DOI: 10.1063/1.121474  0.84
1998 El-Masry NA, Piner EL, Liu SX, Bedair SM. Phase separation in InGaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 72: 40-42. DOI: 10.1063/1.120639  0.84
1997 Joshkin VA, Roberts JC, Piner EL, Behbehani MK, McIntosh FG, Wang L, Lin S, Shmagin I, Krishnankutty S, Kolbas RM, El-Masry NA, Bedair SM. Growth and characterization of In-based nitride compounds and their double heterostructures Materials Research Society Symposium - Proceedings. 468: 13-21. DOI: 10.1557/Proc-468-13  0.84
1997 Joshkin VA, Roberts JC, McIntosh FG, Bedair SM, Piner EL, Behbehani MK. Optical memory effect in GaN epitaxial films Applied Physics Letters. 71: 234-236. DOI: 10.1063/1.120414  0.84
1997 Piner EL, Behbehani MK, El-Masry NA, Roberts JC, McIntosh FG, Bedair SM. Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films Applied Physics Letters. 71: 2023-2025. DOI: 10.1063/1.119775  0.84
1997 Piner EL, Behbehani MK, El-Masry NA, McIntosh FG, Roberts JC, Boutros KS, Bedair SM. Effect of hydrogen on the indium incorporation in InGaN epitaxial films Applied Physics Letters. 70: 461-463. DOI: 10.1063/1.118181  0.84
1997 McIntosh FG, Piner EL, Roberts JC, Behbehani MK, Aumer ME, El-Masry NA, Bedair SM. Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system Applied Surface Science. 112: 98-101. DOI: 10.1016/S0169-4332(96)00992-0  0.84
1997 Bedair SM. Chapter 6 Indium-based Nitride Compounds Semiconductors and Semimetals. 50: 127-166. DOI: 10.1016/S0080-8784(08)63087-2  0.84
1997 Morshed AH, Moussa ME, El-Masry N, Bedair SM. Luminescence of epitaxial cerium oxide films on silicon substrates Materials Science Forum. 239: 291-294.  0.84
1997 Piner EL, El-Masry NA, Liu SX, Bedair SM. Detection and analysis of phase separation in metallorganic chemical vapor deposition InGaN Materials Research Society Symposium - Proceedings. 482: 125-130.  0.84
1997 Morshed AH, Liu SX, Leonard R, McIntosh FG, El-Masry NA, Bedair SM. Epitaxial CeO2 on silicon substrates and the potential of Si/CeO2/Si for SOI structures Materials Research Society Symposium - Proceedings. 477: 339-344.  0.84
1997 Zeng KC, Smith M, Lin JY, Jiang HX, Robert JC, Piner EL, McIntosh FG, Bedair SM, Zavada J. Optical transitions in InGaN/AlGaN single quantum wells Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1139-1143.  0.84
1997 Bedair SM, McIntosh FG, Roberts JC, Piner EL, Boutros KS, El-Masry NA. Growth and characterization of In-based nitride compounds Journal of Crystal Growth. 178: 32-44.  0.84
1997 Morshed AH, Moussa ME, Bedair SM, Leonard R, Liu SX, El-Masry N. Violet/blue emission from epitaxial cerium oxide films on silicon substrates Applied Physics Letters. 70: 1647-1649.  0.84
1997 Piner EL, McIntosh FG, Roberts JC, Boutros KS, Aumer ME, Joshkin VA, El-Masry NA, Bedair SM, Liu SX. Model for indium incorporation in the growth of InGaN films Materials Research Society Symposium - Proceedings. 449: 85-88.  0.84
1997 Roberts JC, McIntosh FG, Aumer ME, Piner EL, Joshkin VA, Liu S, El-Masry NA, Bedair SM. Stacked InGaN/AlGaN double heterostructures Materials Research Society Symposium - Proceedings. 449: 1161-1165.  0.84
1996 McIntosh FG, Boutros KS, Roberts JC, Bedair SM, Piner EL, El-Masry NA. Growth and characterization of AlInGaN quaternary alloys Applied Physics Letters. 68: 40-42. DOI: 10.1063/1.116749  0.84
1996 Leonard RT, Bedair SM. Photoassisted dry etching of GaN Applied Physics Letters. 68: 794-796. DOI: 10.1063/1.116535  0.84
1996 Boutros KS, Roberts JC, Bedair SM. Direct writing of GaAs optical waveguides by laser-assisted chemical vapor deposition Applied Physics Letters. 68: 2041-2042. DOI: 10.1063/1.116296  0.84
1996 Leonard RT, Bedair SM. Photothermally assisted dry etching of GaN Materials Research Society Symposium - Proceedings. 423: 157-161.  0.84
1996 Roberts JC, McIntosh FG, Aumer M, Joshkin V, Boutros KS, Piner EL, He YW, El-Masry NA, Bedair SM. Growth and characterization of AlInGaN/InGaN heterostructures Materials Research Society Symposium - Proceedings. 423: 341-346.  0.84
1996 Piner EL, McIntosh FG, Roberts JC, Aumer ME, Joshkin VA, Bedair SM, El-Masry NA. Growth and properties of InGaN and AlInGaN thin films on (0001) Sapphire Mrs Internet Journal of Nitride Semiconductor Research. 1.  0.84
1996 Roberts JC, Boutros KS, Bedair SM. Selective area epitaxy of GaAs optical waveguides by laser assisted chemical vapor deposition Materials Research Society Symposium - Proceedings. 397: 631-636.  0.84
1996 Morshed AH, Tomita M, El-Masry N, McLarty P, Parikh NP, Bedair SM. Electrical and structural properties of annealed epitaxial CeO2 films on Si(111) substrates Materials Research Society Symposium - Proceedings. 401: 121-126.  0.84
1996 Boutros KS, Roberts JC, McIntosh FG, Piner EL, El-Masry NA, Bedair SM. Low-temperature growth of high quality InxGa1-xN by atomic layer epitaxy Materials Research Society Symposium - Proceedings. 395: 213-218.  0.84
1994 He Y, El-Masry NA, Ramdani J, Bedair SM, McCormick TL, Nemanich RJ, Weber ER. Determination of excess phosphorus in low-temperature GaP grown by gas source molecular beam epitaxy Applied Physics Letters. 65: 1671-1673. DOI: 10.1063/1.112881  0.84
1993 Jung D, Parker CA, Ramdani J, Bedair SM. AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application Journal of Applied Physics. 74: 2090-2093. DOI: 10.1063/1.354753  0.84
1993 Seabaugh AC, Luscombe JH, Randall JN, Colter PC, Dip A, Eldallal GM, Bedair SM. Atomic layer epitaxy for resonant tunneling devices Thin Solid Films. 225: 99-104. DOI: 10.1016/0040-6090(93)90135-C  0.84
1993 Hashemi MM, Najjar FE, McDermott B, Hills JS, Maynard L, Mishra UK, Hauser JR, Bedair SM. Novel fully self-aligned MESFET using source and drain regrown nonalloyed contacts by ALE Journal of Electronic Materials. 22: 179-183. DOI: 10.1007/Bf02665024  0.84
1992 Tian H, Witkowski LC, Kim KW, Littlejohn MA, Bedair SM. Two-Dimensional Analysis of Short-Channel Delta-Doped GaAs MESFET’s Ieee Transactions On Electron Devices. 39: 1998-2006. DOI: 10.1109/16.155870  0.84
1988 Jiang BL, Shimura F, Rozgonyi GA, Hamaguchi N, Bedair SM. Single-crystal x-ray diffraction study of the InGaAs-GaAsP/GaAs superlattice system Applied Physics Letters. 52: 1258-1260. DOI: 10.1063/1.99174  0.84
1988 Humphreys TP, Chiang PK, Bedair SM, Parikh NR. Metalorganic chemical vapor deposition and characterization of the In-As-Sb-Bi material system for infrared detection Applied Physics Letters. 53: 142-144. DOI: 10.1063/1.100350  0.84
1988 Ide Y, McDermott BT, Hashemi M, Bedair SM, Goodhue WD. Sidewall growth by atomic layer epitaxy Applied Physics Letters. 53: 2314-2316. DOI: 10.1063/1.100264  0.84
1987 Tischler MA, Anderson NG, Kolbas RM, Bedair SM. InAs/GaAs quantum well lasers grown by atomic layer epitaxy Proceedings of Spie - the International Society For Optical Engineering. 796: 170-174. DOI: 10.1117/12.941013  0.84
1987 Tischler MA, Anderson NG, Kolbas RM, Bedair SM. Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy Applied Physics Letters. 50: 1266-1268. DOI: 10.1063/1.97879  0.84
1987 Katsuyama T, Bedair SM, Giles NC, Burns RP, Schetzina JF. Growth and characterization of InGaAs/GaAsP strained layer superlattices Journal of Applied Physics. 62: 498-502. DOI: 10.1063/1.339773  0.84
1986 Bedair SM, Whisnant JK, Karam NH, Griffis D, El-Masry NA, Stadelmaier HH. Laser selective deposition of III-V compounds on GaAs and Si substrates Journal of Crystal Growth. 77: 229-234. DOI: 10.1016/0022-0248(86)90306-4  0.84
1985 Lee GS, Lo Y, Lin YF, Bedair SM, Laidig WD. Growth of InAs1-xSbx (0Applied Physics Letters. 47: 1219-1221. DOI: 10.1063/1.96334  0.84
1984 Chiang PK, Bedair SM. Growth of InSb and InAs1-xSbx by OM-CVD Journal of the Electrochemical Society. 131: 2422-2426. DOI: 10.1149/1.2115308  0.84
1984 Menezes S, Werner A, Lewerenz HJ, Thiel FA, Lange P, Fearheiley M, Morrison C, Bedair S, Breithaupt B, Bachmann KJ. Photoelectrochemical Behavior of Indium Phosphide Arsenide Alloys in Acidic Electrolytes Journal of the Electrochemical Society. 131: 2316-2318. DOI: 10.1002/Chin.198506014  0.84
1983 Maracas GN, Moore D, Kim JK, Sillmon RS, Bedair SM, Hauser JR, Carruthers T, Figueroa L. A novel GaInas/GaAs heterostructure interdigital photodetector (HIP) using lattice mismatched epitaxial layers Proceedings of Spie - the International Society For Optical Engineering. 439: 202-206. DOI: 10.1117/12.966098  0.84
1983 Laidig WD, Lee JW, Chiang PK, Simpson LW, Bedair SM. DISORDER OF AN In//xGa//1// minus //xAs-GaAs SUPERLATTICE BY Zn DIFFUSION. Journal of Applied Physics. 54: 6382-6384. DOI: 10.1063/1.331914  0.84
1983 Bedair SM, Timmons ML, Chiang PK, Simpson L, Hauser JR. Growth of GaAs1-x Sbx by organometallic vapor phase epitaxy Journal of Electronic Materials. 12: 959-972. DOI: 10.1007/Bf02654967  0.84
1981 Timmons ML, Bedair SM. GaAsSb and AlGaAsSb tunnel diodes Journal of Applied Physics. 52: 1134-1135. DOI: 10.1063/1.328816  0.84
1980 Fujita S, Bedair SM, Littlejohn MA, Hauser JR. Doping characteristics and electrical properties of Be-doped p-type Al xGa1-xAs by liquid phase epitaxy Journal of Applied Physics. 51: 5438-5444. DOI: 10.1063/1.327499  0.84
1979 Bedair SM, Lamorte MF, Hauser JR. A two-junction cascade solar-cell structure Applied Physics Letters. 34: 38-39. DOI: 10.1063/1.90576  0.84
1975 Bedair SM, Aly SS. Fog dissipation using 10.6 μm radiation Infrared Physics. 15: 233-237. DOI: 10.1016/0020-0891(75)90037-8  0.84
1973 Bedair SM, Smith HP. Laser deposition and ordering kinetics of aluminum on (111) silicon surface Surface Science. 40: 419-422. DOI: 10.1016/0039-6028(73)90081-2  0.84
1971 Bedair SM, Smith HP. LEED studies of oxygen adsorption on the (111) and (110) surfaces of aluminum Journal of Applied Physics. 42: 3616-3618. DOI: 10.1063/1.1660777  0.84
1969 Bedair SM, Smith HP. Atomically clean surfaces by pulsed laser bombardment Journal of Applied Physics. 40: 4776-4781. DOI: 10.1063/1.1657288  0.84
1968 Bedair SM, Hofmann F, Smith HP. Leed studies of oxygen adsorption on the (100) face of aluminum Journal of Applied Physics. 39: 4026-4028. DOI: 10.1063/1.1656896  0.84
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