Rachel S. Goldman - Publications

Affiliations: 
Materials Science and Engineering University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
Materials Science Engineering

110 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Mintairov AM, He Y, Merz JL, Jin Y, Goldman RS, Kudrawiec R, Misiewicz J, Akimov IA, Yakovlev DR, Bayer M. Quasi-ordering of composition fluctuations and their interaction with lattice imperfections in an optical spectra of dilute nitride alloys Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/9/095012  0.72
2016 Liu W, Chi H, Walrath JC, Chang AS, Stoica VA, Endicott L, Tang X, Goldman RS, Uher C. Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films Applied Physics Letters. 108. DOI: 10.1063/1.4940923  0.48
2015 Luengo-Kovac M, Macmahon M, Huang S, Goldman RS, Sih V. G -factor modification in a bulk InGaAs epilayer by an in-plane electric field Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/PhysRevB.91.201110  0.72
2015 Jen T, Vardar G, Wang YQ, Goldman RS. Identifying the dominant interstitial complex in dilute GaAsN alloys Applied Physics Letters. 107. DOI: 10.1063/1.4935857  0.72
2015 Canniff JC, Jeon S, Huang S, Goldman RS. Formation and coarsening of near-surface Ga nanoparticles on SiNx Applied Physics Letters. 106. DOI: 10.1063/1.4922454  0.72
2015 Walrath JC, Lin YH, Huang S, Goldman RS. Profiling the local carrier concentration across a semiconductor quantum dot Applied Physics Letters. 106. DOI: 10.1063/1.4919919  0.72
2015 Warren MV, Canniff JC, Chi H, Naab F, Stoica VA, Clarke R, Uher C, Goldman RS. Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs Journal of Applied Physics. 117. DOI: 10.1063/1.4906992  0.72
2014 Fahrenkrug E, Gu J, Jeon S, Veneman PA, Goldman RS, Maldonado S. Room-temperature epitaxial electrodeposition of single-crystalline germanium nanowires at the wafer scale from an aqueous solution. Nano Letters. 14: 847-52. PMID 24417670 DOI: 10.1021/nl404228z  0.72
2014 Li Y, Stoica VA, Sun K, Liu W, Endicott L, Walrath JC, Chang AS, Lin YH, Pipe KP, Goldman RS, Ctirad Uher RC. Ordered horizontal Sb2Te3 nanowires induced by femtosecond lasers Applied Physics Letters. 105. DOI: 10.1063/1.4902073  0.72
2014 Abere MJ, Chen C, Rittman DR, Kang M, Goldman RS, Phillips JD, Torralva B, Yalisove SM. Nanodot formation induced by femtosecond laser irradiation Applied Physics Letters. 105. DOI: 10.1063/1.4899066  0.72
2014 Chang AS, Zech ES, Kim TW, Lin YH, Mawst LJ, Goldman RS. Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment Applied Physics Letters. 105. DOI: 10.1063/1.4896781  0.72
2014 Huang S, Kim SJ, Pan XQ, Goldman RS. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots Applied Physics Letters. 105. DOI: 10.1063/1.4891330  0.72
2014 Kang M, Beskin I, Al-Heji AA, Shende O, Huang S, Jeon S, Goldman RS. Evolution of ion-induced nanoparticle arrays on GaAs surfaces Applied Physics Letters. 104. DOI: 10.1063/1.4874329  0.72
2014 Kang M, Wu JH, Ye W, Jiang Y, Robb EA, Chen C, Goldman RS. Formation and evolution of ripples on ion-irradiated semiconductor surfaces Applied Physics Letters. 104. DOI: 10.1063/1.4863471  0.72
2014 Kudrawiec R, Sitarek P, Gladysiewicz M, Misiewicz J, He Y, Jin Y, Vardar G, Mintarov AM, Merz JL, Goldman RS, Yu KM, Walukiewicz W. Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers Thin Solid Films. 567: 101-104. DOI: 10.1016/j.tsf.2014.07.052  0.72
2013 Field RL, Jin Y, Cheng H, Dannecker T, Jock RM, Wang YQ, Kurdak C, Goldman RS. Influence of N incorporation on persistent photoconductivity in GaAsN alloys Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/PhysRevB.87.155303  0.72
2013 Walrath JC, Lin YH, Pipe KP, Goldman RS. Quantifying the local Seebeck coefficient with scanning thermoelectric microscopy Applied Physics Letters. 103. DOI: 10.1063/1.4829755  0.72
2013 Huang S, Kim SJ, Levy R, Pan XQ, Goldman RS. Mechanisms of InAs/GaAs quantum dot formation during annealing of in islands Applied Physics Letters. 103. DOI: 10.1063/1.4822052  0.72
2013 Kang M, Al-Heji AA, Lee JE, Saucer TW, Jeon S, Wu JH, Zhao L, Katzenstein AL, Sofferman DL, Sih V, Goldman RS. Ga nanoparticle-enhanced photoluminescence of GaAs Applied Physics Letters. 103. DOI: 10.1063/1.4819841  0.72
2013 Zech ES, Chang AS, Martin AJ, Canniff JC, Lin YH, Millunchick JM, Goldman RS. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets Applied Physics Letters. 103. DOI: 10.1063/1.4818270  0.72
2013 Kang M, Wu JH, Sofferman DL, Beskin I, Chen HY, Thornton K, Goldman RS. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces Applied Physics Letters. 103. DOI: 10.1063/1.4818154  0.72
2013 Feldberg N, Aldous JD, Linhart WM, Phillips LJ, Durose K, Stampe PA, Kennedy RJ, Scanlon DO, Vardar G, Field RL, Jen TY, Goldman RS, Veal TD, Durbin SM. Growth, disorder, and physical properties of ZnSnN2 Applied Physics Letters. 103. DOI: 10.1063/1.4816438  0.72
2013 Warren MV, Canniff JC, Chi H, Morag E, Naab F, Stoica VA, Clarke R, Uher C, Goldman RS. Influence of embedded indium nanocrystals on GaAs thermoelectric properties Journal of Applied Physics. 114. DOI: 10.1063/1.4816087  0.72
2013 Canniff JC, Wood AW, Goldman RS. Formation mechanisms of embedded nanocrystals in SiNx Applied Physics Letters. 102. DOI: 10.1063/1.4810917  0.72
2013 Vardar G, Paleg SW, Warren MV, Kang M, Jeon S, Goldman RS. Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi Applied Physics Letters. 102. DOI: 10.1063/1.4789369  0.72
2013 Pursley B, Luengo-Kovac M, Vardar G, Goldman RS, Sih V. Spin lifetime measurements in GaAsBi thin films Applied Physics Letters. 102. DOI: 10.1063/1.4781415  0.72
2012 Kang M, Wu JH, Huang S, Warren MV, Jiang Y, Robb EA, Goldman RS. Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces Applied Physics Letters. 101. DOI: 10.1063/1.4742863  0.72
2012 Kang M, Saucer TW, Warren MV, Wu JH, Sun H, Sih V, Goldman RS. Surface plasmon resonances of Ga nanoparticle arrays Applied Physics Letters. 101. DOI: 10.1063/1.4742328  0.72
2012 Wood AW, Collino RR, Wang PT, Wang YQ, Goldman RS. Formation and transformation of embedded GaN nanocrystals Applied Physics Letters. 100. DOI: 10.1063/1.4714918  0.72
2012 Warren MV, Wood AW, Canniff JC, Naab F, Uher C, Goldman RS. Evolution of structural and thermoelectric properties of indium-ion-implanted epitaxial GaAs Applied Physics Letters. 100. DOI: 10.1063/1.3687912  0.72
2012 Wu JH, Goldman RS. Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition Applied Physics Letters. 100. DOI: 10.1063/1.3675641  0.72
2011 Collino RR, Wood AW, Estrada NM, Dick BB, Ro HW, Soles CL, Wang YQ, Thouless MD, Goldman RS. Formation and transfer of GaAsN nanostructure layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3630120  0.72
2011 Wood AW, Collino RR, Cardozo BL, Naab F, Wang YQ, Goldman RS. Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals Journal of Applied Physics. 110. DOI: 10.1063/1.3665122  0.72
2011 Huang S, Semichaevsky AV, Webster L, Johnson HT, Goldman RS. Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices Journal of Applied Physics. 110. DOI: 10.1063/1.3631785  0.72
2011 Wood AW, Weng X, Wang YQ, Goldman RS. Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals Applied Physics Letters. 99. DOI: 10.1063/1.3617464  0.72
2011 Dasika VD, Semichaevsky AV, Petropoulos JP, Dibbern JC, Dangelewicz AM, Holub M, Bhattacharya PK, Zide JMO, Johnson HT, Goldman RS. Influence of Mn dopants on InAs/GaAs quantum dot electronic states Applied Physics Letters. 98. DOI: 10.1063/1.3567510  0.72
2011 Kumah DP, Wu JH, Husseini NS, Dasika VD, Goldman RS, Yacoby Y, Clarke R. Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs Applied Physics Letters. 98. DOI: 10.1063/1.3535984  0.72
2011 Semichaevsky AV, Goldman RS, Johnson HT. Linking computational and experimental studies of III-V quantum dots for optoelectronics and photovoltaics Jom. 63: 20-26. DOI: 10.1007/s11837-011-0153-8  0.72
2010 Dannecker T, Jin Y, Cheng H, Gorman CF, Buckeridge J, Uher C, Fahy S, Kurdak C, Goldman RS. Nitrogen composition dependence of electron effective mass in GaAs 1-xNx Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.125203  0.72
2009 Dasika VD, Song JD, Choi WJ, Cho NK, Lee JI, Goldman RS. Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation Applied Physics Letters. 95. DOI: 10.1063/1.3243688  0.72
2009 Wu JH, Ye W, Cardozo BL, Saltzman D, Sun K, Sun H, Mansfield JF, Goldman RS. Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces Applied Physics Letters. 95. DOI: 10.1063/1.3229889  0.72
2009 Collino RR, Dick BB, Naab F, Wang YQ, Thouless MD, Goldman RS. Blister formation in ion-implanted GaAs: Role of diffusivity Applied Physics Letters. 95. DOI: 10.1063/1.3224199  0.72
2009 Jin Y, Jock RM, Cheng H, He Y, Mintarov AM, Wang Y, Kurdak C, Merz JL, Goldman RS. Influence of N interstitials on the electronic properties of GaAsN alloys Applied Physics Letters. 95. DOI: 10.1063/1.3187915  0.72
2009 Dasika VD, Goldman RS, Song JD, Choi WJ, Cho NK, Lee JI. Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots Journal of Applied Physics. 106. DOI: 10.1063/1.3158560  0.72
2009 Yadav A, Pipe KP, Ye W, Goldman RS. Thermoelectric properties of quantum dot chains Journal of Applied Physics. 105. DOI: 10.1063/1.3094029  0.72
2008 Trigo M, Sheu YM, Arms DA, Chen J, Ghimire S, Goldman RS, Landahl E, Merlin R, Peterson E, Reason M, Reis DA. Probing unfolded acoustic phonons with X rays. Physical Review Letters. 101: 025505. PMID 18764197 DOI: 10.1103/PhysRevLett.101.025505  0.72
2008 Sheu YM, Lee SH, Wahlstrand JK, Walko DA, Landahl EC, Arms DA, Reason M, Goldman RS, Reis DA. Thermal transport in a semiconductor heterostructure measured by time-resolved x-ray diffraction Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/PhysRevB.78.045317  0.72
2007 Tabbal M, Kim T, Warrender JM, Aziz MJ, Cardozo BL, Goldman RS. Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1847-1852. DOI: 10.1116/1.2796184  0.72
2007 Yadav A, Pipe KP, Ye W, Goldman RS. In-plane thermoelectric properties of horizontally aligned Inas/Gaas quantum dot superlattices Proceedings of the Materials Division, the Asme Non-Destructive Evaluation Division and the Asme Pressure Vessels and Piping Division, 2006. 541-548. DOI: 10.1115/IMECE2006-14852  0.72
2007 Lee SH, Fritz DM, Sheu YM, Goldman RS, Walko D, Landhal E, Reis DA. Picosecond time resolved X-ray diffraction measurements of coherent phonons and carrier dynamics at a buried interface Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. DOI: 10.1109/CLEOPR.2007.4391239  0.72
2007 Reason M, Jin Y, McKay HA, Mangan N, Mao D, Goldman RS, Bai X, Kurdak C. Influence of N on the electronic properties of GaAsN alloy films and heterostructures Journal of Applied Physics. 102. DOI: 10.1063/1.2798629  0.72
2007 Trigo M, Eckhause TA, Wahlstrand JK, Merlin R, Reason M, Goldman RS. Ultrafast optical generation and remote detection of terahertz sound using semiconductor superlattices Applied Physics Letters. 91. DOI: 10.1063/1.2754353  0.72
2007 Reason M, Rudawski NG, McKay HA, Weng X, Ye W, Goldman RS. Mechanisms of GaAsN growth: Surface and step-edge diffusion Journal of Applied Physics. 101. DOI: 10.1063/1.2719275  0.72
2006 Trigo M, Eckhause TA, Reason M, Goldman RS, Merlin R. Observation of surface-avoiding waves: a new class of extended states in periodic media. Physical Review Letters. 97: 124301. PMID 17025971 DOI: 10.1103/PhysRevLett.97.124301  0.72
2006 Lu JQ, Johnson HT, Dasika VD, Goldman RS. Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2171473  0.72
2005 Ye W, Hanson S, Reason M, Weng X, Goldman RS. Control of InAsGaAs quantum dot density and alignment using modified buffer layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1736-1740. DOI: 10.1116/1.1949215  0.72
2005 Lee SH, Cavalieri AL, Fritz DM, Swan MC, Hegde RS, Reason M, Goldman RS, Reis DA. Generation and propagation of a picosecond acoustic pulse at a buried interface: Time-resolved X-ray diffraction measurements Physical Review Letters. 95. DOI: 10.1103/PhysRevLett.95.246104  0.72
2005 Trigo M, Eckhause TA, Wahlstrand JK, Merlin R, Reason M, Goldman RS. Generation and remote detection of coherent folded acoustic phonons Aip Conference Proceedings. 772: 1190-1191. DOI: 10.1063/1.1994537  0.72
2005 Reason M, Weng X, Ye W, Dettling D, Hanson S, Obeidi G, Goldman RS. Stress evolution in GaAsN alloy films Journal of Applied Physics. 97. DOI: 10.1063/1.1900289  0.72
2005 Weng X, Ye W, Clarke SJ, Goldman RS, Rotberg V, Daniel A, Clarke R. Matrix-seeded growth of nitride semiconductor nanostructures using ion beams Journal of Applied Physics. 97. DOI: 10.1063/1.1847726  0.72
2005 Gleason JN, Hjelmstad ME, Dasika VD, Goldman RS, Fathpour S, Charkrabarti S, Bhattacharya PK. Nanometer-scale studies of point defect distributions in GaMnAs alloys Applied Physics Letters. 86: 011911-1-011911-3. DOI: 10.1063/1.1843284  0.72
2005 Weng X, Rudawski NG, Wang PT, Goldman RS, Partin DL, Heremans J. Effects of buffer layers on the structural and electronic properties of InSb films Journal of Applied Physics. 97. DOI: 10.1063/1.1841466  0.72
2005 Trigo M, Eckhause TA, Merlin R, Reason M, Goldman RS. Localized surface-avoiding modes: A new approach to resonant cavities Quantum Electronics and Laser Science Conference (Qels). 1: 646-648.  0.72
2005 Trigo M, Eckhause TA, Merlin R, Reason M, Goldman RS. Localized surface-avoiding modes: A new approach to resonant cavities Quantum Electronics and Laser Science Conference (Qels). 1: 646-648.  0.72
2004 Goldman RS. Nanoprobing of semiconductor heterointerfaces: Quantum dots, alloys and diffusion Journal of Physics D: Applied Physics. 37. DOI: 10.1088/0022-3727/37/13/R01  0.72
2004 Weng X, Goldman RS, Rotberg V, Bataiev N, Brillson LJ. Origins of luminescence from nitrogen-ion-implanted epitaxial GaAs Applied Physics Letters. 85: 2774-2776. DOI: 10.1063/1.1803940  0.72
2004 Reason M, McKay HA, Ye W, Hanson S, Goldman RS, Rotberg V. Mechanisms of nitrogen incorporation in GaAsN alloys Applied Physics Letters. 85: 1692-1694. DOI: 10.1063/1.1789237  0.72
2004 Weng X, Ye W, Goldman RS, Mabon JC. Formation and blistering of GaAsN nanostructure layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 989-992.  0.72
2004 Shin B, Chen W, Goldman RS, Song JD, Kim JM, Lee YT. Initiation and evolution of phase separation in GaP/InP short-period superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 216-219.  0.72
2003 Kim J, Farina LA, Lewis KM, Bai X, Kurdak, Reason M, Goldman RS. Controlled fabrication of electrodes with a few nanometer spacing by selective etching of a GaAs/AlGaAs heterostructure Proceedings of the Ieee Conference On Nanotechnology. 2: 599-601. DOI: 10.1109/NANO.2003.1230982  0.72
2003 Reason M, Ye W, Weng X, Obeidi G, Goldman RS, Rotberg V. Stress evolution and nitrogen incorporation in GaAsN films Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 67. DOI: 10.1109/ISCS.2003.1239909  0.72
2003 Goldman RS, Shin B, Lita B. Mechanisms of semiconductor nanostructure formation Physica Status Solidi (a) Applied Research. 195: 151-158. DOI: 10.1002/pssa.200306280  0.72
2003 Norman AG, Goldman RS, Noetzel R, Stringfellow GB. Materials Research Society Symposium - Proceedings: Preface Materials Research Society Symposium - Proceedings. 794.  0.72
2003 Eckhause TA, Wahlstrand JK, Merlin R, Reason M, Goldman RS. Generation and propagation of coherent THz folded acoustic phonons Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 89: QWC5/1-QWC5/2.  0.72
2003 Chen W, Shin B, Goldman RS, Stiff A, Bhattacharya PK. Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1920-1923.  0.72
2002 Weng X, Clarke SJ, Ye W, Kumar S, Goldman RS, Daniel A, Clarke R, Holt J, Sipowska J, Francis A, Rotberg V. Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures Journal of Applied Physics. 92: 4012-4018. DOI: 10.1063/1.1504177  0.72
2002 Shin B, Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots Applied Physics Letters. 81: 1423-1425. DOI: 10.1063/1.1501760  0.72
2002 Shin B, Lin A, Lappo K, Goldman RS, Hanna MC, Francoeur S, Norman AG, Mascarenhas A. Initiation and evolution of phase separation in heteroepitaxial InAlAs films Applied Physics Letters. 80: 3292-3294. DOI: 10.1063/1.1476386  0.72
2000 Krishna S, Sabarinathan J, Linder K, Bhattacharya P, Lita B, Goldman RS. Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1502-1506. DOI: 10.1116/1.591413  0.72
2000 Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices Surface Review and Letters. 7: 539-545. DOI: 10.1016/S0218-625X(00)00063-4  0.72
2000 Weng X, Goldman RS, Partin DL, Heremans JP. Evolution of structural and electronic properties of highly mismatched InSb films Journal of Applied Physics. 88: 6278-6286.  0.72
2000 Lita B, Beck M, Goldman RS, Seryogin GA, Nikishin SA, Temkin H. Structural and compositional variations in ZnSnP2/GaAs superlattices Applied Physics Letters. 77: 2894-2896.  0.72
1999 Lita B, Ghaisas S, Goldman RS, Melloch MR. Nanometer-scale studies of Al-Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlattices Applied Physics Letters. 75: 4082-4084. DOI: 10.1063/1.125543  0.72
1999 Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots Applied Physics Letters. 75: 2797-2799.  0.72
1999 Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots Applied Physics Letters. 74: 2824-2826.  0.72
1998 Chen H, Feenstra RM, Goldman RS, Silfvenius C, Landgren G. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Applied Physics Letters. 72: 1727-1729. DOI: 10.1063/1.121165  0.72
1998 Goldman RS, Kavanagh KL, Wieder HH, Ehrlich SN, Feenstra RM. Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs films and multilayers Journal of Applied Physics. 83: 5137-5149.  0.72
1997 Goldman RS, Feenstra RM, Briner BG, O'Steen ML, Hauenstein RJ. Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs Journal of Electronic Materials. 26: 1342-1348.  0.72
1997 Goldman RS, Feenstra RM, Silfvenius C, Stålnacke B, Landgren G. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1027-1033.  0.72
1997 Kavanagh KL, Goldman RS, Lavoie C, Leduc B, Pinnington T, Tiedje T, Klug D, Tse J. In situ detection of misfit dislocations by light scattering Journal of Crystal Growth. 174: 550-557.  0.72
1996 Goldman RS, Kavanagh KL, Wieder HH, Bobbins VM, Ehrlich SN, Feenstra RM. Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases Journal of Applied Physics. 80: 6849-6854.  0.72
1996 Goldman RS, Feenstra RM, Briner BG, O'Steen ML, Hauenstein RJ. Atomic-scale structure and electronic properties of GaN/GaAs superlattices Applied Physics Letters. 69: 3698-3700.  0.72
1996 Margulies DT, Parker FT, Spada FE, Goldman RS, Li J, Sinclair R, Berkowitz AE. Anomalous moment and anisotropy behavior in Fe3O4 films Physical Review B - Condensed Matter and Materials Physics. 53: 9175-9187.  0.72
1995 Rammohan K, Tang Y, Rich DH, Goldman RS, Wieder HH, Kavanagh KL. Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001). Physical Review. B, Condensed Matter. 51: 5033-5037. PMID 9979376 DOI: 10.1103/PhysRevB.51.5033  0.72
1995 Wieder HH, Goldman RS, Chen J, Young AP. Gate-controlled modulation of charge transport in long-channel, δ-doped, heterojunction hall-bar structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1853-1858. DOI: 10.1116/1.587824  0.72
1995 Rich DH, Rammohan K, Tang Y, Lin HT, Goldman RS, Wieder HH, Kavanagh KL. Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1-xAs/GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1766-1772. DOI: 10.1116/1.587810  0.72
1995 Lavoie C, Pinnington T, Nodwell E, Tiedje T, Goldman RS, Kavanagh KL, Hutter JL. Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers Applied Physics Letters. 67: 3744. DOI: 10.1063/1.115369  0.72
1995 Rammohan K, Rich DH, Goldman RS, Chen J, Wieder HH, Kavanagh KL. Study of μm-scale spatial variations in strain of a compositionally step-graded InxGa1-xAs/GaAs(001) heterostructure Applied Physics Letters. 869. DOI: 10.1063/1.113414  0.72
1995 Goldman RS, Wieder HH, Kavanagh KL. Effects of substrate misorientation direction on strain relaxation at InGaAs/GaAs(001) interfaces Materials Research Society Symposium - Proceedings. 379: 21-26.  0.72
1995 Ring KM, Shapiro AL, Deng F, Goldman RS, Spada F, Hellman F, Cheeks TL, Kavanagh KL, Suzuki T. Structural and magnetic characterization of Bi-substituted garnet on Si and GaAs Materials Research Society Symposium - Proceedings. 384: 41-46.  0.72
1995 Lavoie C, Haveman B, Nodwell E, Pinnington T, Tiedje T, Goldman RS, Kavanagh KL, Hutter JL, Bechhoefer J. Light scattering study of the evolution of the surface morphology during growth of InGaAs on GaAs Materials Research Society Symposium - Proceedings. 375: 193-198.  0.72
1994 Raisanen A, Brillson LJ, Goldman RS, Kavanaqh KL, Wieder HH. Strain relaxation induced deep levels in In1-xGaxAs thin films and SiH4 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1050-1053. DOI: 10.1116/1.579283  0.56
1994 Goldman RS, Wieder HH, Kavanagh KL, Rammohan K, Rich DH. Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates Applied Physics Letters. 65: 1424-1426. DOI: 10.1063/1.112071  0.72
1994 Raisanen A, Brillson LJ, Goldman RS, Kavanagh KL, Wieder HH. Optical detection of misfit dislocation-induced deep levels at InGaAs/GaAs heterojunctions Applied Physics Letters. 64: 3572-3574. DOI: 10.1063/1.111201  0.72
1994 Grimsditch M, Kumar S, Goldman RS. A Brillouin scattering investigation of NiO Journal of Magnetism and Magnetic Materials. 129: 327-333. DOI: 10.1016/0304-8853(94)90128-7  0.72
1994 Raisanen A, Brillson LJ, Goldman RS, Kavanagh KL, Wieder H. Dislocation-Induced deep level states in In0.08Ga0.92As/GaAs heterostructures Journal of Electronic Materials. 23: 929-933. DOI: 10.1007/BF02655367  0.72
1994 Goldman RS, Wieder HH, Kavanagh KL. Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces<AUTHGRP> Applied Physics Letters. 67: 341.  0.72
1994 Kavanagh KL, Goldman RS, Chang JCP, Mooney P, Beanland R. Strain relaxation in compositionally graded InGaAs/GaAs heterostructures Scanning Microscopy. 8: 905-912.  0.72
1994 Goldman RS, Rammohan K, Raisanen A, Goorsky M, Brillson LJ, Rich DH, Wieder HH, Kavanagh KL. Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions Materials Research Society Symposium - Proceedings. 340: 349-354.  0.72
1990 Grier DG, Allen K, Goldman RS, Sander LM, Clarke R. Superlattices and long-range order in electrodeposited dendrites. Physical Review Letters. 64: 2152-2155. PMID 10041597 DOI: 10.1103/PhysRevLett.64.2152  0.72
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