| Year |
Citation |
Score |
| 2020 |
Hunt CE, Carpenter A, Voss LF, Scott RC, Shao Q, Looker Q, Garafalo A, Mistyuk S, Durand C, Kumar A, Stroud J, van Benthem K. p-i-n High-Speed Photodiodes for X-Ray and Infrared Imagers Fabricated by In Situ-Doped APCVD Germanium Homoepitaxy Ieee Transactions On Electron Devices. 67: 3235-3241. DOI: 10.1109/Ted.2020.3006810 |
0.371 |
|
| 2019 |
Folta JA, Hunt CE, Farrens SN. Low‐Temperature Wafer Bonding of Surfaces Using a Reactive Sputtered Oxide Journal of the Electrochemical Society. 141: 2157-2160. DOI: 10.1149/1.2055078 |
0.41 |
|
| 2015 |
Bayam Y, Logeeswaran VJ, Katzenmeyer AM, Sadeghian RB, Chacon RJ, Wong MC, Hunt CE, Motomiya K, Jeyadevan B, Islam MS. Synthesis of Ga<inf>2</inf>O<inf>3</inf> nanorods with ultra-sharp tips for high-performance field emission devices Science of Advanced Materials. 7: 211-218. DOI: 10.1166/Sam.2015.2160 |
0.379 |
|
| 2011 |
Berencén Y, Carreras J, Jambois O, Ramírez JM, Rodríguez JA, Domínguez C, Hunt CE, Garrido B. Metal-nitride-oxide-semiconductor light-emitting devices for general lighting. Optics Express. 19: A234-44. PMID 21643365 DOI: 10.1364/Oe.19.00A234 |
0.369 |
|
| 2011 |
Smith BC, Hunt CE, Brodie I, Carpenter AC. High-performance field-emission electron gun using a reticulated vitreous carbon cathode Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3546032 |
0.366 |
|
| 2011 |
Cao MM, Chacon RJ, Hunt CE. A field emission light source using a reticulated vitreous carbon (RVC) cathode and cathodoluminescent phosphors Ieee/Osa Journal of Display Technology. 7: 467-472. DOI: 10.1109/Jdt.2011.2116151 |
0.343 |
|
| 2010 |
Carpenter AC, Hunt CE. High-current, low-cost field emission triode using a reticulated vitreous carbon cathode Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3305455 |
0.398 |
|
| 2005 |
Hunt CE, Chakhovskoi AG, Wang Y. Ion-beam morphological conditioning of carbon field emission cathode surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 731-734. DOI: 10.1116/1.1880052 |
0.377 |
|
| 2005 |
Cuadras A, Garrido B, Morante JR, Hunt CE, Robinson MD. Thermal oxidation of Si1-x-y Gex Cy epitaxial layers characterized by Raman and infrared spectroscopies Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 5-10. DOI: 10.1116/1.1829061 |
0.531 |
|
| 2005 |
Hunt CE, Glembocki OJ, Wang Y, Prokes SM. Carbon nanotube growth for field-emission cathodes from graphite paste using Ar-ion bombardment Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1899236 |
0.38 |
|
| 2004 |
Bjeletich PJ, Peterson JJ, Cuadras A, Fang Q, Zhang JY, Robinson M, Boyd IW, Hunt CE. Electrical characterization of photo-oxidized Si 1-x-y Ge xCy films Microelectronic Engineering. 72: 218-222. DOI: 10.1016/J.Mee.2003.12.040 |
0.458 |
|
| 2003 |
Chubun NN, Chakhovskoi AG, Hunt CE. Efficiency of cathodoluminescent phosphors for a field-emission light source application Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1618-1621. DOI: 10.1116/1.1587134 |
0.35 |
|
| 2003 |
Chakhovskoi AG, Hunt CE, Forsberg G, Nilsson T, Persson P. Reticulated vitreous carbon field emission cathodes for light source applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 571-575. DOI: 10.1116/1.1527956 |
0.347 |
|
| 2003 |
Chubun NN, Chakhovskoi AG, Hajra M, Hunt CE. Field-emission characterization of the 10 × 10 singly addressable double-gated polysilicon tip array Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 483-485. DOI: 10.1116/1.1527634 |
0.378 |
|
| 2003 |
Hajra M, Hunt CE, Ding M, Auciello O, Carlisle J, Gruen DM. Effect of gases on the field emission properties of ultrananocrystalline diamond-coated silicon field emitter arrays Journal of Applied Physics. 94: 4079-4083. DOI: 10.1063/1.1594268 |
0.378 |
|
| 2001 |
Chakhovskoi AG, Chubun NN, Hunt CE, Obraztsov AN, Volkov AP. Emission properties of nanostructured carbon field-emission cathodes Materials Research Society Symposium Proceedings. 685: 210-214. DOI: 10.1557/Proc-685-D5.26.1 |
0.422 |
|
| 2001 |
Bondar VD, Felter TE, Hunt CE, Kucharsky IY, Chakhovskoi AG. Synthesis and luminescent properties of GaN and GaN-Mn blue nanocrystalline thin-film phosphor for FED Materials Research Society Symposium Proceedings. 685: 396-401. DOI: 10.1557/Proc-685-D17.1.1 |
0.311 |
|
| 2001 |
Hajra M, Chubun NN, Chakhovskoi AG, Hunt CE, Liu K, Murali A, Risbud SH, Tyler T, Zhirnov V. Field Emission Characteristic of Silicon Cathodes Coated with GaN Nanoparticles Mrs Proceedings. 685. DOI: 10.1557/Proc-685-D16.2.1 |
0.37 |
|
| 2001 |
Evtukh AA, Litovchenko VG, Litvin YM, Fedin DV, Rassamakin YV, Sarikov AV, Chakhovskoi AG, Hunt CE, Felter TE. Porous silicon coated with ultra-thin diamond-like carbon film cathodes Materials Research Society Symposium Proceedings. 685: 377-382. DOI: 10.1557/Proc-685-D15.4.1 |
0.451 |
|
| 2001 |
Chubun NN, Chakhovskoi AG, Hajra M, Hunt CE. Double-gated singly-addressable polysilicon tip array fabrication and characterization Materials Research Society Symposium Proceedings. 685: 359-364. DOI: 10.1557/Proc-685-D14.3.1 |
0.454 |
|
| 2001 |
Bondar VD, Felter TE, Hunt CE, Dubov YG, Chakhovskoi AG. Long-term cathodoluminescent characterization of thin-film oxide phosphors in a wide range of electron excitation densities Materials Research Society Symposium - Proceedings. 667. DOI: 10.1557/Proc-667-G7.4 |
0.318 |
|
| 2001 |
Chubun NN, Chakhovskoi AG, Hunt CE, Hajra M. Fabrication and characterization of singly addressable arrays of polysilicon field-emission cathodes Solid-State Electronics. 45: 1003-1007. DOI: 10.1557/Proc-621-R1.5.1 |
0.344 |
|
| 2001 |
Hajra M, Chubun NN, Chakhovskoi AG, Hunt CE, Liu K, Murali A, Risbud SH, Tyler T, Zhirnov V. Field emission characterisation of silicon tip arrays coated with gan and diamond nanoparticle cluster Proceedings of the Ieee International Vacuum Microelectronics Conference, Ivmc. 121-122. DOI: 10.1116/1.1540986 |
0.336 |
|
| 2000 |
Hajra M, Chubun NN, Chakhovskoi AG, Hunt CE. Surface treatment on silicon field-emission cathodes Materials Research Society Symposium - Proceedings. 621. DOI: 10.1557/Proc-621-R1.4.1 |
0.38 |
|
| 2000 |
Chakhovskoi AG, Vossough K, Hunt CE, Kosarev AI, Vinogradov AJ, Shutov MV, Andronov AN, Robozerov SV. Effect of carbon coating on electron field emission from polysilicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 980-983. DOI: 10.1116/1.591311 |
0.369 |
|
| 1999 |
Peterson JJ, Hunt CE, Zappe SF, Obermeier E, Westhoff R, Robinson M. Mobility characterization of p-type and n-type strained Si1-x-yGexCy/Si epilayer hall devices Materials Research Society Symposium - Proceedings. 535: 293-298. DOI: 10.1557/Proc-535-293 |
0.373 |
|
| 1999 |
Chakhovskoi AG, Hunt CE, Malinowski ME. Gas desorption electron stimulated during operation of field emitter-phosphor screen pairs Displays. 19: 179-184. DOI: 10.1016/S0141-9382(98)00048-1 |
0.323 |
|
| 1999 |
Peterson JJ, Hunt CE, Robinson M. Schottky and ohmic contacts to doped Si1-x-yGexCy layers Solid-State Electronics. 43: 1725-1734. DOI: 10.1016/S0038-1101(99)00059-3 |
0.307 |
|
| 1998 |
Chakhovskoi AG, Hunt CE, Yang T, Wagner BK, Summers CJ, Malinowski ME, Felter TE. Characterization of thin-film blue SrGa2S4 phosphors for low-to-medium-energy cathodoluminescent displays Journal of the Society For Information Display. 6: 185-189. DOI: 10.1889/1.1985232 |
0.368 |
|
| 1998 |
Peterson JJ, Hunt CE, Robinson M, SCott R. Characterization of SiGeC Using Pt(SiGeC) Silicide Schottky Contacts Mrs Proceedings. 533. DOI: 10.1557/Proc-533-117 |
0.344 |
|
| 1997 |
Bondar VD, Grytsiv MY, Groodzinsky AS, Vasyliv MY, Chakhovskoi AG, Hunt CE, Malinowski ME, Felter TE. Thin film energy-controlled variable color cathodoluminescent screens Journal of the Electrochemical Society. 144: 704-707. DOI: 10.1149/1.1837472 |
0.31 |
|
| 1997 |
Trujillo JT, Chakhovskoi AG, Hunt CE. Effects of vacuum conditions on low frequency noise in silicon field emission devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 401-404. DOI: 10.1116/1.589326 |
0.32 |
|
| 1997 |
Hunt CE, Chakhovskoi AG. Phosphor challenge for field-emission flat-panel displays Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 516-519. DOI: 10.1116/1.589283 |
0.316 |
|
| 1997 |
Chakhovskoi AG, Hunt CE, Malinowski ME, Felter TE, Talin AA. Characterization of novel powder and thin film RGB phosphors for field emission display application Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 507-511. DOI: 10.1116/1.589281 |
0.375 |
|
| 1997 |
Ravichandran D, Roy R, Chakhovskoi AG, Hunt CE, White WB, Erdei S. Fabrication of Y3Al5O12:Eu thin films and powders for field emission display applications Journal of Luminescence. 71: 291-297. DOI: 10.1016/S0022-2313(96)00137-8 |
0.373 |
|
| 1996 |
Vossough KK, Hunt CE. Reactive plasma sputter deposition of silicon oxide Materials Research Society Symposium - Proceedings. 428: 367-372. DOI: 10.1557/Proc-428-367 |
0.369 |
|
| 1996 |
Chakhovskoi AG, Malinowski ME, Talin AA, Felter TE, Trujillo JT, Hunt CE, Stewart KD. Characterization of Y2SiO5:Ce, YAG:Tb and YAG:Eu RGB phosphor triplet for field emission display application Materials Research Society Symposium - Proceedings. 424: 415-420. DOI: 10.1557/Proc-424-415 |
0.361 |
|
| 1996 |
Pérez-Rodríguez A, Romano-Rodríguez A, Cabezas R, Morante JR, Jawhari T, Hunt CE. Effect of stress and composition on the Raman spectra of etch-stop SiGeB layers Journal of Applied Physics. 80: 5736-5741. DOI: 10.1063/1.363627 |
0.33 |
|
| 1995 |
Kesling WD, Hunt CE. Beam Focusing for Field-Emission Flat-Panel Displays Ieee Transactions On Electron Devices. 42: 340-347. DOI: 10.1109/16.370059 |
0.371 |
|
| 1994 |
Farrens SN, Hunt CE, Roberds BE, Smith IK. A Kinetics Study of the Bond Strength of Direct Bonded Wafers Journal of the Electrochemical Society. 141: 3225-3230. DOI: 10.1149/1.2059307 |
0.318 |
|
| 1994 |
Desmond CA, Hunt CE, Farrens SN. The Effects of Process-Induced Defects on the Chemical Selectivity of Highly Doped Boron Etch Stops in Silicon Journal of the Electrochemical Society. 141: 178-184. DOI: 10.1149/1.2054680 |
0.35 |
|
| 1992 |
Ula N, Cooper GA, Davidson JC, Swierkowski SP, Hunt CE. Optimization of Thin-Film Resistive-Gate and Capacitive-Gate GaAs Charge-Coupled Devices Ieee Transactions On Electron Devices. 39: 1032-1040. DOI: 10.1109/16.129079 |
0.321 |
|
| 1991 |
Farrepi SN, Roberds B, Boettcher MC, Ismail MS, Bower RW, Desmond CA, Hunt CE. Mechanical Testing of Bonded Silicon on Insulator Wafers. Mrs Proceedings. 239. DOI: 10.1557/Proc-239-287 |
0.396 |
|
| 1991 |
Hunt CE, Orvis WJ, Trujillo JT. Structure and Electrical Characteristics of Silicon Field-Emission Microelectronic Devices Ieee Transactions On Electron Devices. 38: 2309-2313. DOI: 10.1109/16.88515 |
0.449 |
|
| 1991 |
Hunt CE, Desmond CA, Ciarlo DR, Benett WJ. Direct bonding of micromachined silicon wafers for laser diode heat exchanger applications Journal of Micromechanics and Microengineering. 1: 152-156. DOI: 10.1088/0960-1317/1/3/004 |
0.336 |
|
| 1991 |
Trujillo JT, Hunt CE. Fabrication of silicon field emission points for vacuum microelectronics by wet chemical etching Semiconductor Science and Technology. 6: 223-225. DOI: 10.1088/0268-1242/6/3/014 |
0.385 |
|
| 1991 |
Harendt C, Hunt CE, Appel W, Graf HG, Höfflinger B, Penteker E. Silicon on insulator material by Wafer Bonding Journal of Electronic Materials. 20: 267-277. DOI: 10.1007/Bf02651903 |
0.392 |
|
| 1990 |
Ng K, Chao IW, Hunt CE, Churchill JN. Transient spectroscopy of deep levels in thin semiconductor films Journal of Applied Physics. 68: 6526-6528. DOI: 10.1063/1.346861 |
0.323 |
|
| 1990 |
Marcus RB, Ravi TS, Gmitter T, Chin K, Liu D, Orvis WJ, Ciarlo DR, Hunt CE, Trujillo J. Formation of silicon tips with <1 nm radius Applied Physics Letters. 56: 236-238. DOI: 10.1063/1.102841 |
0.48 |
|
| 1989 |
Mariella RP, Morse JD, Aines R, Hunt CE. Photoelectronic Properties of Low Temperature GaAs Grown on Silicon and GaAs Substrates by Mbe Mrs Proceedings. 145. DOI: 10.1557/Proc-145-325 |
0.328 |
|
| 1989 |
Marcus RB, Ravi TS, Gmitter T, Chin K, Liu D, Orvis WJ, Ciarlo DR, Hunt CE, Trujillo J. Formation of atomically sharp silicon needles Technical Digest - International Electron Devices Meeting. 884-886. |
0.347 |
|
| 1987 |
Hunt CE. IIB-8 electrical measurements of devices fabricated in pulsed arc lamp rapid-zone-recrystallized silicon on insulator Ieee Transactions On Electron Devices. 34: 2362-2362. DOI: 10.1109/T-Ed.1987.23261 |
0.337 |
|
| 1985 |
Kubota K, Hunt CE, Frey J. Thermal profiles during recrystallization of silicon on insulator with scanning incoherent light line sources Applied Physics Letters. 46: 1153-1155. DOI: 10.1063/1.95741 |
0.356 |
|
| Show low-probability matches. |