Year |
Citation |
Score |
2011 |
Emar AM, Berkman EA, Zavada J, El-Masry NA, Bedair SM. Strain relaxation in inxga1-xn/gan quantum well structures Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2034-2037. DOI: 10.1002/Pssc.201000984 |
0.475 |
|
2008 |
Jagannadham K, Berkman EA, Elmasry N. Thermal conductivity of semi-insulating, p -type, and n -type GaN films on sapphire Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 375-379. DOI: 10.1116/1.2899379 |
0.454 |
|
2008 |
Berkman EA, El-Masry NA, Emara A, Bedair SM. Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range Applied Physics Letters. 92. DOI: 10.1063/1.2896648 |
0.579 |
|
2007 |
Mahros AM, Luen MO, Emara A, Berkman EA, Arkun FE, Zhang X, Muth J, El-Masry NA, Bedair SM. Correlations Between Optical Transmission and Magnetic Properties of Doped and Undoped GaMnN Mrs Proceedings. 999. DOI: 10.1557/Proc-0999-K06-06 |
0.672 |
|
2007 |
El-Masry NA, Arkun FE, Berkman EA, Mahrous A, Zavada JM, Bedair SM. Fermi level and magnetic GaMnN thin films Ecs Transactions. 3: 423-427. DOI: 10.1149/1.2753274 |
0.67 |
|
2007 |
Mahros AM, Luen MO, Emara A, Bedair SM, Berkman EA, El-Masry NA, Zavada JM. Magnetic and magnetotransport properties of (AlGaN/GaN):Mg/(GaMnN) heterostructures at room temperature Applied Physics Letters. 90. DOI: 10.1063/1.2749717 |
0.814 |
|
2007 |
Barletta PT, Berkman EA, Moody BF, El-Masry NA, Emara AM, Reed MJ, Bedair SM. Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures Applied Physics Letters. 90. DOI: 10.1063/1.2721133 |
0.758 |
|
2007 |
Mahros AM, Luen MO, Emara A, Berkman EA, Arkun FE, Zhang X, Muth J, El-Masry NA, Bedair SM. Correlations between optical transmission and magnetic properties of doped and undoped GaMnN Materials Research Society Symposium Proceedings. 999: 88-92. |
0.785 |
|
2007 |
Mahros AM, Luen MO, Emara A, Berkman EA, Bedair SM, El-Masry NA. Anomalous hall effect measurements in GaMnN-based multi-layered structures Materials Research Society Symposium Proceedings. 999: 8-13. |
0.815 |
|
2006 |
Barletta PT, Berkman EA, Emara AM, Reed MJ, Moody BF, El-Masry NA, Bedair SM. Development of yellow and white LED's using InGaN-based multi-quantum well structures Ecs Transactions. 3: 315-321. DOI: 10.1149/1.2357220 |
0.724 |
|
2005 |
Berkman E, Collazo R, Schiesser R, Sitar Z. Growth of GaN from elemental gallium and ammonia via modified sandwich growth technique Materials Research Society Symposium Proceedings. 831: 727-732. DOI: 10.1557/Proc-831-E11.38 |
0.329 |
|
2005 |
Reed MJ, Arkun FE, Berkman EA, Elmasry NA, Zavada J, Luen MO, Reed ML, Bedair SM. Effect of doping on the magnetic properties of GaMnN: Fermi level engineering Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1881786 |
0.79 |
|
2005 |
Reed ML, Reed MJ, Luen MO, Berkman EA, Arkun FE, Bedair SM, Zavada JM, El-Masry NA. Magnetic properties of Mn-doped GaN and p-i-n junctions Physica Status Solidi C: Conferences. 2: 2403-2406. DOI: 10.1002/Pssc.200461517 |
0.805 |
|
2005 |
Arkun FE, Reed MJ, Berkman EA, El-Masry NA, Zavada JM, Luen MO, Reed ML, Bedair SM. Evidence of carrier mediated ferromagnetism in GaN:Mn/GaN:Mg heterostructures Materials Research Society Symposium Proceedings. 831: 503-508. |
0.814 |
|
2005 |
Reed MJ, Luen MO, Reed ML, Bedair SM, Arkun FE, Berkman EA, Elmasry NA, Zavada J. The dependence of the magnetic properties of GaMnN on codoping by Mg and Si Materials Research Society Symposium Proceedings. 834: 249-253. |
0.82 |
|
2005 |
Berkman EA, Reed MJ, Arkun FE, El-Masry NA, Zavada JM, Luen MO, Reed ML, Bedair SM. The effect of Mn concentration on curie temperature and magnetic behavior of MOCVD grown GaMnN films Materials Research Society Symposium Proceedings. 834: 255-260. |
0.807 |
|
2004 |
Berkman EA, Reed MJ, Arkun FE, El-Masry NA, Zavada JM, Luen MO, Reed ML, Bedair SM. The Effect of Mn Concentration on Curie Temperature and Magnetic Behavior of MOCVD Grown GaMnN Films Mrs Proceedings. 834. DOI: 10.1557/Proc-834-J7.3 |
0.728 |
|
2004 |
Reed MJ, Luen MO, Reed ML, Bedair SM, Arkun FE, Berkman EA, Elmasry NA, Zavada J. The Dependence of the Magnetic Properties of GaMnN on Codoping by Mg and Si Mrs Proceedings. 834. DOI: 10.1557/Proc-834-J7.2 |
0.642 |
|
2004 |
Arkun FE, Reed MJ, Berkman EA, El-Masry NA, Zavada JM, Luen MO, Reed ML, Bedair SM. Evidence of Carrier Mediated Ferromagnetism in GaN:Mn/GaN:Mg Heterostructures Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E9.2 |
0.648 |
|
2004 |
Arkun FE, Reed MJ, Berkman EA, El-Masry NA, Zavada JM, Reed ML, Bedair SM. Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN:Mg Interface Applied Physics Letters. 85: 3809-3811. DOI: 10.1063/1.1810216 |
0.768 |
|
2003 |
Reed ML, Berkman EA, Reed MJ, Arkun FE, Chikyow T, Bedair SM, Zavada JM, El-Masry NA. Magnetic properties of Mn-doped GaN, InGaN, and AlGaN Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y8.6 |
0.7 |
|
2003 |
Reed ML, Berkman EA, Reed MJ, Arkun PE, Chikyow T, Bedair SM, Zavada JM, El-Masry NA. Magnetic properties of Mn-doped GaN, InGaN, and AlGaN Materials Research Society Symposium - Proceedings. 798: 563-568. |
0.689 |
|
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