Russell D. Dupuis - Publications

Affiliations: 
University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering

355 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Chen P, Park YJ, Liu Y, Detchprohm T, Yoder PD, Shen S, Dupuis RD. Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures Journal of Electronic Materials. 49: 2326-2331. DOI: 10.1007/S11664-019-07932-X  0.44
2019 Key D, Letts E, Tsou CW, Ji MH, Bakhtiary-Noodeh M, Detchprohm T, Shen SC, Dupuis R, Hashimoto T. Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production. Materials (Basel, Switzerland). 12. PMID 31207922 DOI: 10.3390/Ma12121925  0.6
2019 Li X, Dupuis RD, Wernicke T. Semiconductor UV photonics: feature introduction Photonics Research. 7. DOI: 10.1364/Prj.7.0Suvp1  0.36
2019 Mehta K, Liu Y, Wang J, Jeong H, Detchprohm T, Dupuis RD, Yoder PD. Thermal Design Considerations for III-N Vertical-Cavity Surface-Emitting Lasers Using Electro-Opto-Thermal Numerical Simulations Ieee Journal of Quantum Electronics. 55: 1-8. DOI: 10.1109/Jqe.2019.2937991  0.44
2018 Mehta K, Liu Y, Wang J, Jeong H, Detchprohm T, Park YJ, Alugubelli SR, Wang S, Ponce FA, Shen S, Dupuis RD, Yoder PD. Theory and Design of Electron Blocking Layers for III-N-Based Laser Diodes by Numerical Simulation Ieee Journal of Quantum Electronics. 54: 1-11. DOI: 10.1109/Jqe.2018.2876662  0.44
2018 Mehta K, Liu Y, Wang J, Jeong H, Detchprohm T, Park YJ, Alugubelli SR, Wang S, Ponce FA, Shen S, Dupuis RD, Yoder PD. Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices Ieee Journal of Quantum Electronics. 54: 1-7. DOI: 10.1109/Jqe.2018.2836667  0.44
2018 Dallas J, Pavlidis G, Chatterjee B, Lundh JS, Ji M, Kim J, Kao T, Detchprohm T, Dupuis RD, Shen S, Graham S, Choi S. Thermal characterization of gallium nitride p-i-n diodes Applied Physics Letters. 112: 73503. DOI: 10.1063/1.5006796  0.44
2018 Sun H, Park YJ, Li K, Liu X, Detchprohm T, Zhang X, Dupuis RD, Li X. Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application Applied Surface Science. 458: 949-953. DOI: 10.1016/J.Apsusc.2018.07.178  0.4
2017 Greenlee JD, Nath A, Anderson TJ, Feigelson BN, Koehler AD, Hobart KD, Dupuis RD, Detchprohm T, Shen SC, Kub FJ. NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0141702Jss  0.6
2017 Liu Y, Kao T, Zhu Y, Park YJ, Mehta K, Wang S, Shen S, Yoder D, Ponce FA, Detchprohm T, Dupuis RD. Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation) Proceedings of Spie. 10104: 1010405. DOI: 10.1117/12.2249958  0.4
2017 Mehta K, Detchprohm T, Park YJ, Liu Y, Moreno O, Alugubelli SR, Wang S, Ponce FA, Shen S, Dupuis RD, Yoder PD. High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for Use in the UV-Visible Spectrum Ieee Journal of Quantum Electronics. 53: 1-8. DOI: 10.1109/Jqe.2017.2766288  0.44
2017 Liu H, Zhang Y, Steenbergen EH, Liu S, Lin Z, Zhang Y, Kim J, Ji MH, Detchprohm T, Dupuis RD, Kim JK, Hawkins SD, Klem JF. Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx Physical Review Applied. 8: 34028. DOI: 10.1103/Physrevapplied.8.034028  0.44
2017 Sun H, Wu F, Park YJ, tahtamouni TMA, Li K, Alfaraj N, Detchprohm T, Dupuis RD, Li X. Influence of TMAl preflow on AlN epitaxy on sapphire Applied Physics Letters. 110: 192106. DOI: 10.1063/1.4983388  0.4
2017 Detchprohm T, Liu YS, Mehta K, Wang S, Xie H, Kao TT, Shen SC, Yoder PD, Ponce F, Dupuis RD. Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors Applied Physics Letters. 110: 11105. DOI: 10.1063/1.4973581  0.6
2017 Wang S, Li X, Fischer AM, Detchprohm T, Dupuis RD, Ponce FA. Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow Journal of Crystal Growth. 475: 334-340. DOI: 10.1016/J.Jcrysgro.2017.07.013  0.4
2017 Detchprohm T, Li X, Shen S-, Yoder PD, Dupuis RD. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors Semiconductors and Semimetals. 96: 121-166. DOI: 10.1016/Bs.Semsem.2016.09.001  0.44
2017 Li X, Wang S, Liu H, Ponce FA, Detchprohm T, Dupuis RD. 100-nm thick single-phase wurtzite BAlN films with boron contents over 10% Physica Status Solidi B-Basic Solid State Physics. 254: 1600699. DOI: 10.1002/Pssb.201600699  0.4
2016 Liu YS, Haq AFMS, Mehta K, Kao TT, Wang S, Xie H, Shen SC, Yoder PD, Ponce F, Detchprohm T, Dupuis RD. Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector Applied Physics Express. 9: 111002. DOI: 10.7567/Apex.9.111002  0.6
2016 Liu YS, Kao TT, Mehta K, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Xie H, Ponce FA. Development for ultraviolet vertical cavity surface emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 9748. DOI: 10.1117/12.2212617  0.84
2016 Kao TT, Kim J, Detchprohm T, Dupuis RD, Shen SC. High-Responsivity GaN/InGaN Heterojunction Phototransistors Ieee Photonics Technology Letters. 28: 2035-2038. DOI: 10.1109/Lpt.2016.2582702  0.84
2016 Ji MH, Kim J, Detchprohm T, Dupuis RD, Sood AK, Dhar NK, Lewis J. Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays Ieee Photonics Technology Letters. 28: 2015-2018. DOI: 10.1109/Lpt.2016.2580038  0.84
2016 Liu YS, Wang S, Xie H, Kao TT, Mehta K, Jia XJ, Shen SC, Yoder PD, Ponce FA, Detchprohm T, Dupuis RD. Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition Applied Physics Letters. 109. DOI: 10.1063/1.4961634  0.84
2016 Kim S, Ryou JH, Dupuis RD, Kim H. Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors Electronics Letters. 52: 157-159. DOI: 10.1049/El.2015.3430  0.44
2016 Liu YS, Haq AFMS, Kao TT, Mehta K, Shen SC, Detchprohm T, Yoder PD, Dupuis RD, Xie H, Ponce FA. Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 443: 81-84. DOI: 10.1016/J.Jcrysgro.2016.03.027  0.84
2016 Kim J, Ji MH, Detchprohm T, Dupuis RD, Shervin S, Ryou JH. Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes Physica Status Solidi (a) Applications and Materials Science. 213: 1296-1301. DOI: 10.1002/Pssa.201532764  0.84
2016 Kao TT, Liu YS, Detchprohm T, Dupuis RD, Shen SC. Vanadium-based ohmic contact for Aluminum-rich n-AlGaN Cs Mantech 2016 - International Conference On Compound Semiconductor Manufacturing Technology. 251-254.  0.84
2015 Yu YJ, Kim KS, Nam J, Kwon SR, Byun H, Lee K, Ryou JH, Dupuis RD, Kim J, Ahn G, Ryu S, Ryu MY, Kim JS. Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene. Nano Letters. 15: 896-902. PMID 25562118 DOI: 10.1021/Nl503624J  0.84
2015 Kim J, Ji MH, Detchprohm T, Dupuis RD, Ryou JH, Sood AK, Dhar ND, Lewis J. Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates Applied Physics Express. 8. DOI: 10.7567/Apex.8.122202  0.84
2015 Shen SC, Kao TT, Kim HJ, Lee YC, Kim J, Ji MH, Ryou JH, Detchprohm T, Dupuis RD. GaN/InGaN avalanche phototransistors Applied Physics Express. 8. DOI: 10.7567/Apex.8.032101  0.84
2015 Li X, Sundaram S, Disseix P, Le Gac G, Bouchoule S, Patriarche G, Réveret F, Leymarie J, El Gmili Y, Moudakir T, Genty F, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm Optical Materials Express. 5: 380-392. DOI: 10.1364/Ome.5.000380  0.44
2015 Kao TT, Kim J, Lee YC, Ji MH, Haq A, Detchprohm T, Dupuis RD, Shen SC. Performance evaluation of GaN/InGaN heterojunction phototransistors Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015. DOI: 10.1364/CLEO_SI.2015.SW4N.3  0.84
2015 Sood AK, Zeller JW, Welser RE, Puri YR, Dupuis RD, Ji MH, Kim J, Detchprohm T, Dhar NK, Lewis JS, Peters RL. Development of high gain avalanche photodiodes for UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 9609. DOI: 10.1117/12.2193182  0.84
2015 Kao TT, Kim J, Lee YC, Haq AFMS, Ji MH, Detchprohm T, Dupuis RD, Shen SC. Temperature-Dependent Characteristics of GaN Homojunction Rectifiers Ieee Transactions On Electron Devices. 62: 2679-2683. DOI: 10.1109/Ted.2015.2443135  0.84
2015 Li XH, Detchprohm T, Liu YS, Dupuis RD, Kao TT, Haq S, Shen SC, Mehta K, Yoder PD, Wang S, Wei YO, Xie H, Fischer AM, Ponce FA, Wernicke T, et al. Optically pumped low-threshold UV lasers 2015 Ieee Summer Topicals Meeting Series, Sum 2015. 119-120. DOI: 10.1109/PHOSST.2015.7248226  0.84
2015 Liu YS, Kao TT, Satter MM, Lochner Z, Shen SC, Detchprohm T, Yoder PD, Dupuis RD, Ryou JH, Fischer AM, Wei YO, Xie H, Ponce FA. Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters Ieee Photonics Technology Letters. 27: 1768-1771. DOI: 10.1109/Lpt.2015.2443053  0.84
2015 Kim J, Ji MH, Detchprohm T, Ryou JH, Dupuis RD, Sood AK, Dhar NK. AlxGa1-xN ultraviolet avalanche photodiodes with avalanche gain greater than 105 Ieee Photonics Technology Letters. 27: 642-645. DOI: 10.1109/Lpt.2015.2388552  0.84
2015 Li XH, Detchprohm T, Dupuis RD, Kao TT, Shen SC, Satter MM, Yoder PD, Wang S, Wei YO, Xie H, Fischer A, Ponce FA, Wernicke T, Reich C, Martens M, et al. III-nitride deep UV laser on sapphire substrate 2015 Ieee Photonics Conference, Ipc 2015. 236-237. DOI: 10.1109/IPCon.2015.7323746  0.84
2015 Liu H, Yue N, Zhang Y, Qiao P, Zuo D, Kesler B, Chuang SL, Ryou JH, Justice JD, Dupuis R. Lattice vibration modes in type-II superlattice InAs/GaSb with no-common-atom interface and overlapping vibration spectra Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.235317  0.84
2015 Kao TT, Lee YC, Kim HJ, Ryou JH, Kim J, Detchprohm T, Dupuis RD, Shen SC. Radiative recombination in GaN/InGaN heterojunction bipolar transistors Applied Physics Letters. 107. DOI: 10.1063/1.4938147  0.84
2015 Li X, Xie H, Ponce FA, Ryou JH, Detchprohm T, Dupuis RD. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4938136  0.84
2015 Kim J, Ji MH, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA, Ryou JH. Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition Journal of Applied Physics. 118. DOI: 10.1063/1.4931456  0.84
2015 Li XH, Kao TT, Satter MM, Wei YO, Wang S, Xie H, Shen SC, Yoder PD, Fischer AM, Ponce FA, Detchprohm T, Dupuis RD. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate Applied Physics Letters. 106. DOI: 10.1063/1.4906590  0.84
2015 Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Réveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, et al. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Journal of Crystal Growth. 432: 37-44. DOI: 10.1016/J.Jcrysgro.2015.09.013  0.84
2015 Li XH, Wei YO, Wang S, Xie H, Kao TT, Satter MM, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA. Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition Journal of Crystal Growth. 414: 76-80. DOI: 10.1016/J.Jcrysgro.2014.10.007  0.84
2015 Li X, Sundaram S, El Gmili Y, Genty F, Bouchoule S, Patriache G, Disseix P, Réveret F, Leymarie J, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A. MOVPE grown periodic AlN/BAlN heterostructure with high boron content Journal of Crystal Growth. 414: 119-122. DOI: 10.1016/J.Jcrysgro.2014.09.030  0.44
2015 Dupuis RD, Ponce FA. Growth of III-Nitrides Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 331-333. DOI: 10.1002/Pssc.201570083  0.84
2015 Li XH, Wang S, Xie H, Wei YO, Kao TT, Satter MM, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA. Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition Physica Status Solidi (B) Basic Research. 252: 1089-1095. DOI: 10.1002/Pssb.201451571  0.84
2015 Li X, Sundaram S, Gmili YE, Moudakir T, Genty F, Bouchoule S, Patriarche G, Dupuis RD, Voss PL, Salvestrini JP, Ougazzaden A. BAlN thin layers for deep UV applications Physica Status Solidi (a) Applications and Materials Science. 212: 745-750. DOI: 10.1002/Pssa.201400199  0.84
2015 Kao TT, Kim J, Lee YC, Ji MH, Haq A, Detchprohm T, Dupuis RD, Shen SC. Performance evaluation of GaN/InGaN heterojunction phototransistors Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015.  0.84
2014 Ryou JH, Kim J, Choi S, Kim HJ, Lochner Z, Ji MH, Satter MM, Detchprohm T, Yoder PD, Dupuis RD, Asadirad M, Liu JP, Kim JS, Fischere AM, Juday R, et al. Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes Ecs Transactions. 61: 109-116. DOI: 10.1149/06104.0109ecst  0.44
2014 Liu YS, Kao TT, Satter MM, Lochner Z, Li XH, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 9002. DOI: 10.1117/12.2036835  0.44
2014 Satter MM, Lochner Z, Kao TT, Liu YS, Li XH, Shen SC, Dupuis RD, Yoder PD. AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport Ieee Journal of Quantum Electronics. 50: 166-173. DOI: 10.1109/Jqe.2014.2300757  0.44
2014 Li XH, Detchprohm T, Kao TT, Satter MM, Shen SC, Douglas Yoder P, Dupuis RD, Wang S, Wei YO, Xie H, Fischer AM, Ponce FA, Wernicke T, Reich C, Martens M, et al. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates Applied Physics Letters. 105. DOI: 10.1063/1.4897527  0.84
2014 Kim J, Ji MH, Yuan D, Guo R, Liu J, Asadirad M, Detchprohm T, Kwon MK, Dupuis RD, Das S, Ryou JH. Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation Applied Physics Letters. 104. DOI: 10.1063/1.4871089  0.44
2014 Sidler M, Rauter P, Blanchard R, Métivier P, Mansuripur TS, Wang C, Huang Y, Ryou JH, Dupuis RD, Faist J, Capasso F. Mode switching in a multi-wavelength distributed feedback quantum cascade laser using an external micro-cavity Applied Physics Letters. 104. DOI: 10.1063/1.4863663  0.44
2014 Jo B, Lee CR, Kim JS, Han WS, Song JH, Leem JY, Noh SK, Ryou JH, Dupuis RD. Investigation on the lasing characteristics of InAs/InGaAsP quantum dots with additional confinement structures Journal of Crystal Growth. 393: 59-63. DOI: 10.1016/J.Jcrysgro.2013.11.038  0.84
2014 Satter MM, Liu YS, Kao TT, Lochner Z, Li X, Ryou JH, Shen SC, Detchprohm T, Dupuis RD, Yoder PD. Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 828-831. DOI: 10.1002/Pssc.201300679  0.44
2014 Liu YS, Lochner Z, Kao TT, Satter MM, Li XH, Ryou JH, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce F. Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 258-260. DOI: 10.1002/Pssc.201300213  0.44
2014 Kao TT, Kim J, Lee YC, Ji MH, Detchprohm T, Dupuis RD, Shen SC. Homojunction GaN p-i-n rectifiers with ultra-low-on-state resistance Cs Mantech 2014 - 2014 International Conference On Compound Semiconductor Manufacturing Technology. 157-160.  0.44
2014 Lee YC, Kao TT, Kim J, Ji MH, Detchphrom T, Dupuis RD, Shen SC. Npn GaN/InGaN heterojunction bipolar transistors using a palladium-based contact Cs Mantech 2014 - 2014 International Conference On Compound Semiconductor Manufacturing Technology. 113-116.  0.44
2013 Kim S, Kim HJ, Choi S, Lochner Z, Ryou JH, Dupuis RD, Ahn KS, Kim H. Electrical characteristics of Ti/Al contacts on AlInN:Mg/GaN heterostructures Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.10Ma07  0.44
2013 Kim S, Kim HJ, Choi S, Ryou JH, Dupuis RD, Ahn KS, Kim H. Electrical characteristics of Pt Schottky contacts on AlInN:Mg/GaN heterostructures Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.10Ma05  0.84
2013 Dupuis RD, Kim J, Lee YC, Lochner Z, Ji MH, Kao TT, Ryou JH, Detchphrom T, Shen SC. III-N high-power bipolar transistors Ecs Transactions. 58: 261-267. DOI: 10.1149/05804.0261ecst  0.44
2013 Sood AK, Richwine RA, Welser RE, Puri YR, Dupuis RD, Ji MH, Kim J, Detchprohm T, Dhar NK, Peters RL. Development of III-N UVAPDs for ultraviolet sensor applications Proceedings of Spie - the International Society For Optical Engineering. 8868. DOI: 10.1117/12.2032207  0.84
2013 Lochner Z, Kao TT, Liu YS, Li XH, Satter MM, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2008830  0.84
2013 Dupuis RD, Kim J, Kao TT, Lee YC, Lochner Z, Ji MH, Ryou JH, Detchphrom T, Shen SC. Bipolar III-N high-power electronic devices 1st Ieee Workshop On Wide Bandgap Power Devices and Applications, Wipda 2013 - Proceedings. 96-99. DOI: 10.1109/WiPDA.2013.6695571  0.44
2013 Kim J, Ji MH, Lochner Z, Choi S, Sebkhi N, Liu J, Satter MM, Kim JS, Yoder PD, Dupuis RD, Juday R, Fischer AM, Ponce FA, Ryou JH. Improved hole transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs Ieee Photonics Technology Letters. 25: 1789-1792. DOI: 10.1109/Lpt.2013.2275791  0.84
2013 Satter MM, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. AlGaN-based lateral current injection laser diodes using regrown ohmic contacts Ieee Photonics Technology Letters. 25: 313-316. DOI: 10.1109/Lpt.2012.2235826  0.84
2013 Dupuis RD. III-V semiconductor quantum-well devices grown by metalorganic chemical vapor deposition Proceedings of the Ieee. 101: 2188-2199. DOI: 10.1109/JPROC.2013.2274919  0.44
2013 Craford MG, Dupuis RD, Feng M, Kish FA, Laskar J. 50Th anniversary of the light-emitting diode (led): An ultimate lamp [scanning the issue] Proceedings of the Ieee. 101: 2154-2157. DOI: 10.1109/JPROC.2013.2274908  0.44
2013 Shen SC, Dupuis RD, Lochner Z, Lee YC, Kao TT, Zhang Y, Kim HJ, Ryou JH. Working toward high-power GaN/InGaN heterojunction bipolar transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074025  0.84
2013 Kao TT, Liu YS, Mahbub Satter M, Li XH, Lochner Z, Douglas Yoder P, Detchprohm T, Dupuis RD, Shen SC, Ryou JH, Fischer AM, Wei Y, Xie H, Ponce FA. Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors Applied Physics Letters. 103. DOI: 10.1063/1.4829477  0.84
2013 Juday R, Fischer AM, Huang Y, Huang JY, Kim HJ, Ryou JH, Dupuis RD, Bour DP, Ponce FA. Hydrogen-related, deeply bound excitons in Mg-doped GaN films Applied Physics Letters. 103. DOI: 10.1063/1.4819029  0.84
2013 Lochner Z, Kao TT, Liu YS, Li XH, Mahbub Satter M, Shen SC, Douglas Yoder P, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Applied Physics Letters. 102. DOI: 10.1063/1.4795719  0.84
2013 Kim S, Ryou JH, Dupuis RD, Kim H. Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4790384  0.84
2013 Li T, Wei QY, Fischer AM, Huang JY, Huang YU, Ponce FA, Liu JP, Lochner Z, Ryou JH, Dupuis RD. The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells Applied Physics Letters. 102. DOI: 10.1063/1.4789758  0.84
2013 Choi S, Jin Kim H, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JY, Ponce FA, Ryou JH. Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.10.006  0.84
2013 Kim J, Lochner Z, Ji MH, Choi S, Kim HJ, Kim JS, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JY, Ponce FA, Ryou JH. Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.09.046  0.84
2013 Choi S, Kim HJ, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JY, Ponce FA, Ryou J. WITHDRAWN: Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.03.029  0.64
2013 Hwang J, Lee K, Kim JS, Lee CR, Lee IH, Lee JH, Leem JY, Ryou JH, Dupuis RD. Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer Journal of Crystal Growth. 370: 109-113. DOI: 10.1016/J.Jcrysgro.2012.08.049  0.84
2013 Lochner Z, Li XH, Kao TT, Satter MM, Kim HJ, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Sun K, Wei Y, Li T, Fischer A, Ponce FA. Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate Physica Status Solidi (a) Applications and Materials Science. 210: 1768-1770. DOI: 10.1002/Pssa.201329013  0.84
2012 Mansuripur TS, Menzel S, Blanchard R, Diehl L, Pflügl C, Huang Y, Ryou JH, Dupuis RD, Loncar M, Capasso F. Widely tunable mid-infrared quantum cascade lasers using sampled grating reflectors. Optics Express. 20: 23339-48. PMID 23188297 DOI: 10.1364/Oe.20.023339  0.84
2012 Sood AK, Welser RE, Richwine RA, Puri YR, Dupuis RD, Ryou JH, Dhar NK, Suvarna P, Shahedipour-Sandvik F. Development of small unit cell avalanche photodiodes for UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 8375. DOI: 10.1117/12.923182  0.84
2012 Huang Y, Melton A, Jampana B, Jamil M, Ryou JH, Dupuis RD, Ferguson IT. Growth and characterization of InxGa1-xN alloys by metalorganic chemical vapor deposition for solar cell applications Journal of Photonics For Energy. 2. DOI: 10.1117/1.Jpe.2.028501  0.44
2012 Satter MM, Kim HJ, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers Ieee Journal of Quantum Electronics. 48: 703-711. DOI: 10.1109/Jqe.2012.2190496  0.84
2012 Satter MM, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Polarization matching in algan-based multiple-quantum-well deep ultraviolet laser diodes on aln substrates using quaternary AlInGaN barriers Journal of Lightwave Technology. 30: 3017-3025. DOI: 10.1109/Jlt.2012.2210998  0.84
2012 Blanchard R, Pfluegl C, Diehl L, Dupuis RD, Capasso F. Multi-stack quantum cascade lasers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 147-150. DOI: 10.1109/ICIPRM.2012.6403343  0.84
2012 Choi S, Ji MH, Kim J, Jin Kim H, Satter MM, Yoder PD, Ryou JH, Dupuis RD, Fischer AM, Ponce FA. Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers Applied Physics Letters. 101. DOI: 10.1063/1.4759044  0.84
2012 Abid M, Moudakir T, Orsal G, Gautier S, En Naciri A, Djebbour Z, Ryou JH, Patriarche G, Largeau L, Kim HJ, Lochner Z, Pantzas K, Alamarguy D, Jomard F, Dupuis RD, et al. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications Applied Physics Letters. 100. DOI: 10.1063/1.3679703  0.84
2012 Blanchard R, Grezes C, Menzel S, Pflügl C, Diehl L, Huang Y, Ryou JH, Dupuis RD, Capasso F. Double-waveguide quantum cascade laser Applied Physics Letters. 100. DOI: 10.1063/1.3678033  0.84
2012 Kim S, Kim HJ, Choi S, Lochner Z, Ryou JH, Dupuis RD, Kim H. Carrier transport properties of Mg-doped InAlN films Electronics Letters. 48: 1306-1308. DOI: 10.1049/El.2012.2238  0.84
2012 Lee YC, Zhang Y, Lochner ZM, Kim HJ, Ryou JH, Dupuis RD, Shen SC. GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3MW/cm 2) Physica Status Solidi (a) Applications and Materials Science. 209: 497-500. DOI: 10.1002/Pssa.201100436  0.84
2012 Blanchard R, Grezes C, Menzel S, Pflügl C, Diehl L, Huang Y, Ryou JH, Dupuis RD, Capasso F. Vertical monolithic integration of quantum cascade lasers for high-power broadband applications 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.84
2011 Zhang Y, Hamsen C, Choy JT, Huang Y, Ryou JH, Dupuis RD, Loncar M. Photonic crystal disk lasers. Optics Letters. 36: 2704-6. PMID 21765515 DOI: 10.1364/Ol.36.002704  0.84
2011 Ryou JH, Dupuis RD. Focus issue: Optics in LEDs for lighting. Optics Express. 19: A897-9. PMID 21747559 DOI: 10.1364/Oe.19.00A897  0.84
2011 Dupuis RD, Shen SC, Lochner ZM, Kim HJ, Lee YC, Zhang Y, Wang CY, Ryou JH. III-nitride heterojunction field-effect transistors and heterojunction bipolar transistors for next-generation power electronics Ecs Transactions. 41: 73-85. DOI: 10.1149/1.3631487  0.84
2011 Zhang Y, Liu JP, Kao TT, Kim S, Lee YC, Lochner Z, Ryou JH, Yoder PD, Dupuis RD, Shen SC. Performance enhancement of InGaN-based laser diodes using a step-graded Al xGa 1-xN electron blocking layer International Journal of High Speed Electronics and Systems. 20: 515-520. DOI: 10.1142/S0129156411006805  0.84
2011 Sood AK, Richwine RA, Egerton EJ, Puri YR, Dupuis RD, Dhar NK, Balcerak RS. Avalanche photodiodes for high-resolution UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 8155. DOI: 10.1117/12.895288  0.84
2011 Shen SC, Dupuis RD, Lee YC, Kim HJ, Zhang Y, Lochner Z, Yoder PD, Ryou JH. GaN/InGaN heterojunction bipolar transistors with fT} >5GHz Ieee Electron Device Letters. 32: 1065-1067. DOI: 10.1109/Led.2011.2156378  0.84
2011 Huang Y, Ryou JH, Dupuis RD. Epitaxial structure design of a long-wavelength InAlGaAs/InP transistor laser Ieee Journal of Quantum Electronics. 47: 642-650. DOI: 10.1109/Jqe.2011.2108636  0.84
2011 Blanchard R, Menzel S, Pflügl C, Diehl L, Wang C, Huang Y, Ryou JH, Dupuis RD, Dal Negro L, Capasso F. Gratings with an aperiodic basis: Single-mode emission in multi-wavelength lasers New Journal of Physics. 13. DOI: 10.1088/1367-2630/13/11/113023  0.84
2011 Steenbergen EH, Huang Y, Ryou JH, Dupuis RD, Nunna K, Huffaker DL, Zhang YH. Optical properties of strain-balanced InAs/InAs 1-xSb x type-II superlattices Aip Conference Proceedings. 1416: 122-125. DOI: 10.1063/1.3671713  0.84
2011 Lochner Z, Jin Kim H, Lee YC, Zhang Y, Choi S, Shen SC, Doug Yoder P, Ryou JH, Dupuis RD. NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrate Applied Physics Letters. 99. DOI: 10.1063/1.3659475  0.84
2011 Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N, Kuciauskas D. Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors Applied Physics Letters. 99. DOI: 10.1063/1.3633345  0.84
2011 Huang Y, Melton A, Jampana B, Jamil M, Ryou JH, Dupuis RD, Ferguson IT. Compositional instability in strained InGaN epitaxial layers induced by kinetic effects Journal of Applied Physics. 110. DOI: 10.1063/1.3626434  0.84
2011 Steenbergen EH, Huang Y, Ryou JH, Ouyang L, Li JJ, Smith DJ, Dupuis RD, Zhang YH. Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3625429  0.84
2011 Huang Y, Ryou JH, Dupuis RD, Zuo D, Kesler B, Chuang SL, Hu H, Kim KH, Ting Lu Y, Hsieh KC, Zuo JM. Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3609240  0.84
2011 Zhang Y, Kao TT, Liu J, Lochner Z, Kim SS, Ryou JH, Dupuis RD, Shen SC. Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3581080  0.84
2011 Kim H, Kim KK, Lee SN, Ryou JH, Dupuis RD. Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides Applied Physics Letters. 98. DOI: 10.1063/1.3567796  0.84
2011 Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N. InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer Journal of Applied Physics. 109. DOI: 10.1063/1.3561368  0.84
2011 Huang Y, Ryou JH, Dupuis RD. Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates Journal of Crystal Growth. 321: 60-64. DOI: 10.1016/J.Jcrysgro.2011.02.039  0.84
2011 Huang Y, Ryou JH, Dupuis RD, Pflgl C, Capasso F, Sun K, Fischer AM, Ponce FA. Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition Journal of Crystal Growth. 316: 75-80. DOI: 10.1016/J.Jcrysgro.2010.12.028  0.84
2011 Huang Y, Ryou JH, Dupuis RD, D'costa VR, Steenbergen EH, Fan J, Zhang YH, Petschke A, Mandl M, Chuang SL. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Journal of Crystal Growth. 314: 92-96. DOI: 10.1016/J.Jcrysgro.2010.11.003  0.84
2011 Liu J, Zhang Y, Lochner Z, Kim SS, Kim H, Ryou JH, Shen SC, Doug Yoder P, Dupuis RD, Wei QY, Sun KW, Fischer AM, Ponce FA. Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition Journal of Crystal Growth. 315: 272-277. DOI: 10.1016/J.Jcrysgro.2010.09.071  0.84
2011 Lochner Z, Jin Kim H, Choi S, Lee YC, Zhang Y, Shen SC, Ryou JH, Dupuis RD. Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases Journal of Crystal Growth. 315: 278-282. DOI: 10.1016/J.Jcrysgro.2010.08.034  0.84
2011 Yoder PD, Sridharan S, Graham S, Shen SC, Ryou JH, Dupuis RD. Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter-wave oscillations Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2285-2287. DOI: 10.1002/Pssc.201001143  0.84
2011 Zhang Y, Lee YC, Lochner Z, Kim HJ, Choi S, Ryou JH, Dupuis RD, Shen SC. High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2 Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2451-2453. DOI: 10.1002/Pssc.201001098  0.84
2011 Zhang Y, Lee YC, Lochner Z, Kim HJ, Ryou JH, Dupuis RD, Shen SC. GaN/InGaN heterojunction bipolar transistors with collector current density > 20 kA/cm2 2011 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2011 0.84
2011 Abid M, Moudakir T, Gautier S, Orsal G, En Naciri A, Djebbour Z, Ryou JH, Patriarche G, Kim HJ, Lochner Z, Pantzas K, Alamarguy D, Jomard F, Dupuis RD, Ougazzaden A. New generation of distributed bragg reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications Optics Infobase Conference Papers 0.44
2010 Xu S, Xu C, Liu Y, Hu Y, Yang R, Yang Q, Ryou JH, Kim HJ, Lochner Z, Choi S, Dupuis R, Wang ZL. Ordered nanowire array blue/near-UV light emitting diodes. Advanced Materials (Deerfield Beach, Fla.). 22: 4749-53. PMID 20862713 DOI: 10.1002/Adma.201002134  0.84
2010 Fischer AM, Sun KW, Juday R, Ponce FA, Ryou JH, Kim HJ, Choi S, Kim SS, Dupuis RD. Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.031003  0.84
2010 Sood AK, Richwine RA, Puri YR, Dupuis RD, Ryou JH, Dhar NK, Balcerak RS. Development of GaN/AlGaN APD's for UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.866361  0.84
2010 Liu J, Zhang Y, Lochner Z, Kim SS, Kim H, Ryou JH, Shen SC, Yoder PD, Dupuis RD, Wei Q, Sun K, Fischer A, Ponce F. Performance improvement of InGaN-based laser diodes by epitaxial layer structure design Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842334  0.84
2010 Lee YC, Zhang Y, Kim HJ, Choi S, Lochner Z, Dupuis RD, Ryou JH, Shen SC. High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors Ieee Transactions On Electron Devices. 57: 2964-2969. DOI: 10.1109/Ted.2010.2064316  0.84
2010 Venkatachalam A, Klein B, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Design strategies for InGaN-based green lasers Ieee Journal of Quantum Electronics. 46: 238-245. DOI: 10.1109/Jqe.2009.2029348  0.84
2010 Barkad HA, Soltani A, Mattalah M, Gerbedoen JC, Rousseau M, De Jaeger JC, BenMoussa A, Mortet V, Haenen K, Benbakhti B, Moreau M, Dupuis R, Ougazzaden A. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/46/465104  0.84
2010 Huang Y, Ryou JH, Dupuis RD, Petschke A, Mandl M, Chuang SL. InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition Applied Physics Letters. 96. DOI: 10.1063/1.3456386  0.84
2010 Choi S, Kim HJ, Lochner Z, Zhang Y, Lee YC, Shen SC, Ryou JH, Dupuis RD. Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation Applied Physics Letters. 96. DOI: 10.1063/1.3446891  0.84
2010 Choi S, Kim HJ, Kim SS, Liu J, Kim J, Ryou JH, Dupuis RD, Fischer AM, Ponce FA. Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer Applied Physics Letters. 96. DOI: 10.1063/1.3441373  0.84
2010 Kim HJ, Choi S, Kim SS, Ryou JH, Yoder PD, Dupuis RD, Fischer AM, Sun K, Ponce FA. Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes Applied Physics Letters. 96. DOI: 10.1063/1.3353995  0.84
2010 Petschke A, Mandl M, Chuang SL, Huang Y, Ryou JH, Dupuis RD. Metal-organic chemical vapour deposition growth of InAs/GaSb type-II superlattice photodiodes Electronics Letters. 46: 1151-1152. DOI: 10.1049/El.2010.1308  0.84
2010 Kim HJ, Choi S, Yoo D, Ryou JH, Hawkridge ME, Liliental-Weber Z, Dupuis RD. Digitally alloyed modulated precursor flow epitaxial growth of ternary algan with binary AIN and GaN sub-layers and observation of compositional inhomogeneity Journal of Electronic Materials. 39: 466-472. DOI: 10.1007/S11664-010-1098-3  0.84
2010 Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH, Shen SC. High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1970-1973. DOI: 10.1002/Pssc.200983555  0.84
2010 Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH, Shen SC. Study on the base recombination current in direct-growth npn GaN/InGaN DHBTs 2010 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2010 0.84
2009 Choi S, Kim HJ, Zhang Y, Bai X, Yoo D, Limb J, Ryou JH, Shen SC, Yoder PD, Dupuis RD. Geiger-mode operation of GaN avalanche photodiodes grown on GaN substrates Ieee Photonics Technology Letters. 21: 1526-1528. DOI: 10.1109/Lpt.2009.2029073  0.84
2009 Shen SC, Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH. Surface leakage in GaN/InGaN double heterojunction bipolar transistors Ieee Electron Device Letters. 30: 1119-1121. DOI: 10.1109/Led.2009.2030373  0.84
2009 Kim H, Ryou JH, Dupuis RD, Jang T, Park Y, Lee SN, Seong TY. Electrical characteristics of metal contacts to laser-irradiated N-polar n-type GaN Ieee Electron Device Letters. 30: 319-321. DOI: 10.1109/Led.2009.2013486  0.84
2009 Ryou JH, Yoder PD, Liu J, Lochner Z, Kim HS, Choi S, Kim HJ, Dupuis RD. Control of quantum-confined stark effect in InGaN-based quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 15: 1080-1091. DOI: 10.1109/Jstqe.2009.2014170  0.84
2009 Huang Y, Ryou JH, Dupuis RD, Dixon F, Holonyak N, Feng M. Device performance of light emitting transistors with c-doped and zn-doped base layers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 387-390. DOI: 10.1109/ICIPRM.2009.5012449  0.84
2009 Choi S, Kim HJ, Ryou JH, Dupuis RD. Actual temperatures of growing surfaces of III-nitride-based materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition Journal of Applied Physics. 106. DOI: 10.1063/1.3238488  0.84
2009 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC, Huang Y, Ryou JH, Dupuis RD. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3224914  0.84
2009 Lee JW, Sone C, Park Y, Lee SN, Ryou JH, Dupuis RD, Hong CH, Kim H. High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures Applied Physics Letters. 95. DOI: 10.1063/1.3166868  0.84
2009 Zhang Y, Shen SC, Kim HJ, Choi S, Ryou JH, Dupuis RD, Narayan B. Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates Applied Physics Letters. 94. DOI: 10.1063/1.3148812  0.84
2009 Hawkridge ME, Liliental-Weber Z, Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD. Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth Applied Physics Letters. 94. DOI: 10.1063/1.3129870  0.84
2009 Hawkridge ME, Liliental-Weber Z, Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD. The structural quality of AlxGa1-xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy Applied Physics Letters. 94. DOI: 10.1063/1.3086280  0.84
2009 Choi S, Kim HJ, Ryou JH, Dupuis RD. Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1-xN layers with AlN and AlyGa1-yN monolayers Journal of Crystal Growth. 311: 3252-3256. DOI: 10.1016/J.Jcrysgro.2009.03.041  0.84
2009 Sridharan S, Yoder PD, Shen SC, Ryou JH, Dupuis RD. Geiger mode simulation of GaN homojunction avalanche photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 6. DOI: 10.1002/Pssc.200880903  0.84
2009 Allerman A, Dupuis RD, Khan A, Ponce FA. Physica Status Solidi (A) Applications and Materials: Preface Physica Status Solidi (a) Applications and Materials Science. 206: 193-194. DOI: 10.1002/Pssa.200880416  0.84
2009 Liu JP, Limb J, Lochner Z, Yoo D, Ryou JH, Dupuis RD. Green light-emitting diodes with p-InGaN:Mg grown on c-plane sapphire and GaN substrates Physica Status Solidi (a) Applications and Materials Science. 206: 750-753. DOI: 10.1002/Pssa.200824366  0.84
2008 Dupuis RD, Dongwon Y, Ryou JH, Yun Z, Shen SC, Limb J, Yoder PD, Hanser AD, Preble E, Evans K. Growth and characterization of high-performance GaN and Al xGa1-xN ultraviolet avalanche photodiodes grown on GaN substrates Materials Research Society Symposium Proceedings. 1040: 13-18. DOI: 10.1557/Proc-1040-Q03-03  0.84
2008 Dupuis RD, Limb JB, Liu J, Ryou JH, Horne C, Yoo D. InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.766915  0.84
2008 Ryou JH, Limb J, Lee W, Liu J, Lochner Z, Yoo D, Dupuis RD. Effect of silicon doping in the quantum-well barriers on the electrical and optical properties of visible green light-emitting diodes Ieee Photonics Technology Letters. 20: 1769-1771. DOI: 10.1109/Lpt.2008.2004686  0.84
2008 Dupuis RD, Krames MR. History, development, and applications of high-brightness visible light-emitting diodes Journal of Lightwave Technology. 26: 1154-1171. DOI: 10.1109/JLT.2008.923628  0.84
2008 Kim H, Ryou JH, Dupuis RD, Lee SN, Park Y, Jeon JW, Seong TY. Electrical characteristics of contacts to thin film N-polar n-type GaN Applied Physics Letters. 93. DOI: 10.1063/1.3013838  0.84
2008 Ougazzaden A, Gautier S, Moudakir T, Djebbour Z, Lochner Z, Choi S, Kim HJ, Ryou JH, Dupuis RD, Sirenko AA. Bandgap bowing in BGaN thin films Applied Physics Letters. 93. DOI: 10.1063/1.2977588  0.84
2008 Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD, Dalmau RF, Lu P, Sitar Z. Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition Applied Physics Letters. 93. DOI: 10.1063/1.2959064  0.84
2008 Dixon F, Feng M, Holonyak N, Huang Y, Zhang XB, Ryou JH, Dupuis RD. Transistor laser with emission wavelength at 1544 nm Applied Physics Letters. 93. DOI: 10.1063/1.2958228  0.84
2008 Liu JP, Ryou JH, Dupuis RD, Han J, Shen GD, Wang HB. Barrier effect on hole transport and carrier distribution in InGaNGaN multiple quantum well visible light-emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2957667  0.84
2008 Huang Y, Zhang XB, Ryou JH, Dupuis RD, Dixon F, Holonyak N, Feng M. InAlGaAsInP light-emitting transistors operating near 1.55 μm Journal of Applied Physics. 103. DOI: 10.1063/1.2939243  0.84
2008 Liu JP, Ryou JH, Yoo D, Zhang Y, Limb J, Horne CA, Shen SC, Dupuis RD, Hanser AD, Preble EA, Evans KR. III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge Applied Physics Letters. 92. DOI: 10.1063/1.2906372  0.84
2008 Ryou JH, Lee W, Limb J, Yoo D, Liu JP, Dupuis RD, Wu ZH, Fischer AM, Ponce FA. Control of quantum-confined Stark effect in InGaNGaN multiple quantum well active region by p -type layer for III-nitride-based visible light emitting diodes Applied Physics Letters. 92. DOI: 10.1063/1.2894514  0.84
2008 Liu JP, Limb JB, Ryou JH, Yoo D, Horne CA, Dupuis RD, Wu ZH, Fischer AM, Ponce FA, Hanser AD, Liu L, Preble EA, Evans KR. Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates Applied Physics Letters. 92. DOI: 10.1063/1.2832645  0.84
2008 Limb JB, Yoo D, Zhang Y, Ryou JH, Shen SC, Dupuis RD. GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation Electronics Letters. 44: 313-315. DOI: 10.1049/El:20082830  0.84
2008 Dupuis RD, Ryou JH, Shen SC, Yoder PD, Zhang Y, Kim HJ, Choi S, Lochner Z. Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes Journal of Crystal Growth. 310: 5217-5222. DOI: 10.1016/J.Jcrysgro.2008.07.107  0.84
2008 Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD. Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 4880-4884. DOI: 10.1016/J.Jcrysgro.2008.07.081  0.84
2008 Huang Y, Ryou JH, Dupuis RD. Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors Journal of Crystal Growth. 310: 4345-4350. DOI: 10.1016/J.Jcrysgro.2008.07.034  0.84
2008 Liu J, Ryou JH, Lochner Z, Limb J, Yoo D, Dupuis RD, Wu Z, Fischer AM, Ponce FA. Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 5166-5169. DOI: 10.1016/J.Jcrysgro.2008.07.033  0.84
2008 Liu JP, Limb JB, Ryou JH, Lee W, Yoo D, Horne CA, Dupuis RD. Characteristics of green light-emitting diodes using an InGaN:Mg/GaN:Mg superlattice as p-type hole injection and contact layers Journal of Electronic Materials. 37: 558-563. DOI: 10.1007/S11664-007-0355-6  0.84
2008 Zhang Y, Yoo D, Limb JB, Ryou JH, Dupuis RD, Shen SC. GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2290-2292. DOI: 10.1002/Pssc.200778704  0.84
2008 Ryou JH, Liu JP, Zhang Y, Horne CA, Lee W, Shen SC, Dupuis RD. Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1849-1851. DOI: 10.1002/Pssc.200778698  0.84
2008 Zhang Y, Ryou JH, Dupuis RD, Shen SC. A surface treatment technique for III-N device fabrication 2008 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2008 0.84
2007 Shen SC, Zhang Y, Yoo D, Limb JB, Ryou JH, Dupuis RD, Britt M, Yoder PD. Performance evaluation of III-nitride avalanche photodiodes grown on SiC and GaN substrates Ecs Transactions. 11: 91-96. DOI: 10.1149/1.2783861  0.84
2007 Dupuis RD, Ryou JH, Yoo D, Limb JB, Zhang Y, Shen SC, Yoder D. High-performance GaN and AlxGa1-xN ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates Proceedings of Spie - the International Society For Optical Engineering. 6739. DOI: 10.1117/12.738505  0.84
2007 Shen SC, Zhang Y, Yoo D, Limb JB, Ryou JH, Yoder PD, Dupuis RD. Performance of deep ultraviolet gan avalanche photodiodes grown by MOCVD Ieee Photonics Technology Letters. 19: 1744-1746. DOI: 10.1109/Lpt.2007.906052  0.84
2007 Yoo D, Limb J, Ryou JH, Zhang Y, Shen SC, Dupuis RD, Hanser D, Preble E, Evans K. AlxGa1-xN ultraviolet avalanche photodiodes grown on GaN substrates Ieee Photonics Technology Letters. 19: 1313-1315. DOI: 10.1109/Lpt.2007.902376  0.84
2007 Lee W, Limb J, Ryou JH, Yoo D, Ewing MA, Korenblit Y, Dupuis RD. Nitride-based green light-emitting diodes with various p-type layers Ieee/Osa Journal of Display Technology. 3: 126-132. DOI: 10.1109/Jdt.2007.896719  0.84
2007 Chu-Kung BF, Wu CH, Walter G, Feng M, Holonyak N, Chung T, Ryou JH, Dupuis RD. Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors Applied Physics Letters. 91. DOI: 10.1063/1.2821380  0.84
2007 Wu ZH, Fischer AM, Ponce FA, Lee W, Ryou JH, Limb J, Yoo D, Dupuis RD. Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes Applied Physics Letters. 91. DOI: 10.1063/1.2760160  0.84
2007 Kim J, Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback Applied Physics Letters. 90. DOI: 10.1063/1.2741118  0.84
2007 Zhang XB, Ryou JH, Dupuis RD, Xu C, Mou S, Petschke A, Hsieh KC, Chuang SL. Improved surface and structural properties of InAs/GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces Applied Physics Letters. 90. DOI: 10.1063/1.2717524  0.84
2007 Lee W, Ryou JH, Yoo D, Limb J, Dupuis RD, Hanser D, Preble E, Williams NM, Evans K. Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors Applied Physics Letters. 90. DOI: 10.1063/1.2535899  0.84
2007 Wu ZH, Stevens M, Ponce FA, Lee W, Ryou JH, Yoo D, Dupuis RD. Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography Applied Physics Letters. 90. DOI: 10.1063/1.2431716  0.84
2007 Seguin R, Guillet T, Taliercio T, Lefebvre P, Bretagnon T, Zhang XB, Ryou JH, Dupuis RD. Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers Epj Applied Physics. 37: 15-18. DOI: 10.1051/epjap:2007006  0.84
2007 Limb JB, Yoo D, Ryou JH, Shen SC, Dupuis RD. Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates Electronics Letters. 43: 366-367. DOI: 10.1049/El:20070065  0.84
2007 Chung T, Keogh DM, Ryou JH, Yoo D, Limb J, Lee W, Shen SC, Asbeck PM, Dupuis RD. High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition Journal of Crystal Growth. 298: 852-856. DOI: 10.1016/J.Jcrysgro.2006.10.231  0.84
2007 Limb JB, Lee W, Ryou JH, Yoo D, Dupuis RD. Comparison of GaN and In 0.04Ga 0.96N p-layers on the electrical and electroluminescence properties of green light emitting diodes Journal of Electronic Materials. 36: 426-430. DOI: 10.1007/S11664-006-0072-6  0.84
2007 Yoo D, Limb JB, Ryou JH, Lee W, Dupuis RD. Epitaxial growth and device design optimization of full-vertical GaN p-i-n rectifiers Journal of Electronic Materials. 36: 353-358. DOI: 10.1007/S11664-006-0069-1  0.84
2006 Wang X, Song J, Summers CJ, Ryou JH, Li P, Dupuis RD, Wang ZL. Density-controlled growth of aligned ZnO nanowires sharing a common contact: a simple, low-cost, and mask-free technique for large-scale applications. The Journal of Physical Chemistry. B. 110: 7720-4. PMID 16610866 DOI: 10.1021/Jp060346H  0.84
2006 Reine MB, Hairston A, Lamarre P, Wong KK, Tobin SP, Sood AK, Cooke C, Pophristic M, Guo S, Peres B, Singh R, Eddy CR, Chowdhury U, Wong MM, Dupuis RD, et al. Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 6119. DOI: 10.1117/12.653645  0.84
2006 Zhang XB, Ryou JH, Dupuis RD. Growth of InAlAs self-assembled quantum dots on InAlGaAsInP for 1.55 μm laser applications by metalorganic chemical vapor deposition Applied Physics Letters. 89. DOI: 10.1063/1.2385693  0.84
2006 Noh MS, Ryou JH, Dupuis RD, Chang YL, Weissman RH. Band lineup of pseudomorphic GaAs 1-xSb x quantum-well structures with GaAs, GaAsP, and InGaP barriers grown by metal organic chemical vapor deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2363237  0.84
2006 Chu-Kung BF, Feng M, Walter G, Holonyak N, Chung T, Ryou JH, Limb J, Yoo D, Shen SC, Dupuis RD, Keogh D, Asbeck PM. Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors Applied Physics Letters. 89. DOI: 10.1063/1.2336619  0.84
2006 Zhang XB, Heller RD, Ryou JH, Dupuis RD, Walter G, Holonyak N. Growth of InP self-assembled quantum dots on strained and strain-relaxed in x(Al 0.6Ga 0.4) 1-xP matrices by metal-organic chemical vapor deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2244519  0.84
2006 Limb JB, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD, Reed ML, Collins CJ, Wraback M, Hanser D, Preble E, Williams NM, Evans K. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition Applied Physics Letters. 89. DOI: 10.1063/1.2219390  0.84
2006 Yoo D, Limb J, Ryou JH, Lee W, Dupuis RD. GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates Applied Physics Letters. 88. DOI: 10.1063/1.2201554  0.84
2006 Chung T, Limb J, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD, Chu-Kung B, Feng M, Keogh DM, Asbeck PM. Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design Applied Physics Letters. 88. DOI: 10.1063/1.2198014  0.84
2006 Zhang XB, Ryou JH, Dupuis RD, Petschke A, Mou S, Chuang SL, Xu C, Hsieh KC. Metalorganic chemical vapor deposition growth of high-quality InAsGaSb type II superlattices on (001) GaAs substrates Applied Physics Letters. 88. DOI: 10.1063/1.2168668  0.84
2006 Dixon F, Chan R, Walter G, Holonyak N, Feng M, Zhang XB, Ryou JH, Dupuis RD. Visible spectrum light-emitting transistors Applied Physics Letters. 88. DOI: 10.1063/1.2158704  0.84
2006 Keogh DM, Asbeck PM, Chung T, Limb J, Yoo D, Ryou J-, Lee W, Shen S-, Dupuis RD. High current gain InGaN/GaN HBTs with 300/spl deg/C operating temperature Electronics Letters. 42: 661-663. DOI: 10.1049/Iel:20060333  0.6
2006 Limb JB, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD. High performance GaN pin rectifiers grown on free-standing GaN substrates Electronics Letters. 42: 1313-1314. DOI: 10.1049/El:20062261  0.84
2006 Keogh DM, Asbeck PM, Chung T, Limb J, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD. High current gain InGaN/GaN HBTs with 300°C operating temperature Electronics Letters. 42: 661-663. DOI: 10.1049/El:20060333  0.84
2006 Lee W, Limb J, Ryou JH, Yoo D, Chung T, Dupuis RD. Effect of thermal annealing induced by p-type layer growth on blue and green LED performance Journal of Crystal Growth. 287: 577-581. DOI: 10.1016/J.Jcrysgro.2005.10.079  0.84
2006 Zhang XB, Ryou JH, Dupuis RD, Mou S, Chuang SL, Xu C, Hsieh KC. Metal organic chemical vapor deposition of metaphorphic InAs-GaSb superlattices on (0 0 1) GaAs substrates for mid-IR photodetector applications Journal of Crystal Growth. 287: 545-549. DOI: 10.1016/J.Jcrysgro.2005.10.025  0.84
2006 Keogh D, Asbeck P, Chung T, Dupuis RD, Feng M. Digital etching of III-N materials using a two-step Ar/KOH technique Journal of Electronic Materials. 35: 771-776. DOI: 10.1007/S11664-006-0137-6  0.84
2006 Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices Journal of Electronic Materials. 35: 705-710. DOI: 10.1007/S11664-006-0125-X  0.84
2006 Zhang XB, Ryou JH, Dupuis RD, He L, Hull R, Walter G, Holonyak N. Effect of thin strain-compensated Al 0.6Ga 0.4P layers on the growth of multiple-stacked InP/In 0.5Al 0.3Ga 0.2P quantum dots Journal of Electronic Materials. 35: 701-704. DOI: 10.1007/S11664-006-0124-Y  0.84
2006 Chung T, Limb J, Ryou JH, Lee W, Li P, Yoo D, Zhang XB, Shen SC, Dupuis RD, Keogh D, Asbeck P, Chukung B, Feng M, Zakharov D, Lilienthal-Weber Z. Growth of InGaN HBTs by MOCVD Journal of Electronic Materials. 35: 695-700. DOI: 10.1007/S11664-006-0123-Z  0.84
2006 Lee W, Limb J, Ryou JH, Yoo D, Chung T, Dupuis RD. Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes Journal of Electronic Materials. 35: 587-591. DOI: 10.1007/S11664-006-0104-2  0.84
2006 Zhang XB, Petschke A, Mou S, Xu C, Ryou JH, Chuang SL, Hsieh KC, Dupuis RD. Metalorganic chemical vapor deposition growth of high-quality InAs/GaSb type II superlattices for MID-IR applications Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2006: 415-419.  0.84
2006 Chuang SL, Kim J, Kondratko PK, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Tunneling injection quantum-dot lasers Materials Research Society Symposium Proceedings. 891: 51-58.  0.84
2005 Wang X, Song J, Li P, Ryou JH, Dupuis RD, Summers CJ, Wang ZL. Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates. Journal of the American Chemical Society. 127: 7920-3. PMID 15913382 DOI: 10.1021/Ja050807X  0.84
2005 Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang X, Dupuis RD. Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser Ieee Photonics Technology Letters. 17: 938-940. DOI: 10.1109/Lpt.2005.844328  0.84
2005 Kim J, Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing Ieee Journal of Quantum Electronics. 41: 1369-1379. DOI: 10.1109/Jqe.2005.857067  0.84
2005 Zhang XB, Ryou JH, Walter G, Holonyak N, Dupuis RD. Effects of surface morphology and strain state of InAlGaP matrices on the growth of InP quantum dots by metalorganic chemical vapor deposition Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2005: 385-388. DOI: 10.1109/ICIPRM.2005.1517508  0.84
2005 Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Temperature-dependent luminescence of InP quantum dots coupled with an InGaP quantum well and of InP quantum dots in a quantum well Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2132529  0.84
2005 Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Interface alloy mixing effect in the growth of self-assembled InP quantum dots on InAlGaP matrices by metalorganic chemical-vapor deposition Journal of Applied Physics. 98: 63501. DOI: 10.1063/1.2043234  0.84
2005 Huang XR, Bai J, Dudley M, Dupuis RD, Chowdhury U. Epitaxial tilting of GaN grown on vicinal surfaces of sapphire Applied Physics Letters. 86: 211916. DOI: 10.1063/1.1940123  0.8
2005 Bai J, Dudley M, Chen L, Skromme B, Wagner B, Davis RF, Chowdhury U, Dupuis RD. Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates Journal of Applied Physics. 97: 116101. DOI: 10.1063/1.1914956  0.8
2005 Cao Y, Zhang J, Li X, Kosel TH, Fay P, Hall DC, Zhang XB, Dupuis RD, Jasinski JB, Liliental-Weber Z. Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications Applied Physics Letters. 86: 62105. DOI: 10.1063/1.1861981  0.6
2005 Chung T, Limb JB, Chowdhury U, Li P, Ryou JH, Yoo D, Zakharov D, Liliental-Weber Z, Dupuis RD. MOCVD growth of InGaN:Mg for GaN/InGaN HBTs Physica Status Solidi C: Conferences. 2: 2157-2160. DOI: 10.1002/Pssc.200461598  0.84
2005 Keogh DM, Dupuis RD, Feng M, Raychaudhuri S, Asbeck PM. Improvement of III-N surfaces after inductively coupled plasma dry etch exposure Proceedings - Electrochemical Society. 354-360.  0.84
2004 Keogh DM, Li JC, Conway AM, Qiao D, Raychaudhuri S, Asbeck PM, Dupuis RD, Feng M. Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers International Journal of High Speed Electronics and Systems. 14: 831-836. DOI: 10.1142/S0129156404002910  0.84
2004 Hampson MD, Shen SC, Schwindt RS, Price RK, Chowdhury U, Wong MM, Gang Zhu T, Yoo D, Dupuis RD, Feng M. Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz Ieee Electron Device Letters. 25: 238-240. DOI: 10.1109/Led.2004.826565  0.84
2004 Hull BA, Mohney SE, Chowdhury U, Dupuis RD. Ohmic contacts to p-type Al 0.45Ga 0.55N Journal of Applied Physics. 96: 7325-7331. DOI: 10.1063/1.1814169  0.84
2004 Simpkins BS, Yu ET, Chowdhury U, Wong MM, Zhu TG, Yoo DW, Dupuis RD. Local conductivity and surface photovoltage variations due to magnesium segregation in p-type GaN Journal of Applied Physics. 95: 6225-6231. DOI: 10.1063/1.1713025  0.8
2004 Chowdhury U, Price RK, Wong MM, Yoo D, Zhang X, Feng M, Dupuis RD. Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs Journal of Crystal Growth. 272: 318-321. DOI: 10.1016/J.Jcrysgro.2004.08.058  0.84
2004 Wang JH, Mohney SE, Wang SH, Chowdhury U, Dupuis RD. Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N Journal of Electronic Materials. 33: 418-421. DOI: 10.1007/S11664-004-0194-7  0.8
2003 Chen L, Skromme B, Mikhov MK, Yamane H, Aoki M, DiSalvo FJ, Wagner B, Davis RF, Grudowski PA, Dupuis RD. Structural Defect-Related Photoluminescence in GaN Mrs Proceedings. 798: 637-642. DOI: 10.1557/Proc-798-Y5.55  0.44
2003 Wong MM, Chowdhury U, Sicault D, Becher DT, Denyszyn JC, Choi JH, Zhu TG, Feng M, Dupuis RD. Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier Japanese Journal of Applied Physics, Part 2: Letters. 42: L353-L355. DOI: 10.1143/Jjap.42.L353  0.84
2003 Wraback M, Shen H, Rudin S, Bellotti E, Goano M, Carrano JC, Collins CJ, Campbell JC, Dupuis RD. Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN Applied Physics Letters. 82: 3674-3676. DOI: 10.1063/1.1577833  0.84
2003 Zhu TG, Chowdhury U, Denyszyn JC, Wong MM, Dupuis RD. AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition Journal of Crystal Growth. 248: 548-551. DOI: 10.1016/S0022-0248(02)01930-9  0.84
2003 Chowdhury U, Wong MM, Collins CJ, Yang B, Denyszyn JC, Campbell JC, Dupuis RD. High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer Journal of Crystal Growth. 248: 552-555. DOI: 10.1016/S0022-0248(02)01877-8  0.84
2003 Ryou JH, Dupuis RD. Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition Journal of Electronic Materials. 32: 18-22. DOI: 10.1007/S11664-003-0247-3  0.84
2003 Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition Journal of Electronic Materials. 32: 1335-1338. DOI: 10.1007/S11664-003-0032-3  0.48
2002 Chowdhury U, Collins CJ, Wong MM, Zhu TG, Denyszyn JC, Choi JH, Yang B, Campbell JC, Dupuis RD. Epitaxial growth for solar-blind AlGaN photodetector imaging arrays by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 743: 499-503. DOI: 10.1557/Proc-743-L7.9  0.84
2002 Dupuis RD, Ryou JH, Heller RD, Walter G, Kellogg DA, Holonyak N, Reddy CV, Narayanamurti V, Mathes DT, Hull R. InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 707: 149-154. DOI: 10.1557/Proc-707-H11.6.1  0.84
2002 Kou L, Hall DC, Strohhöfer C, Polman A, Zhang T, Kolbas RM, Heller RD, Dupuis RD. Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization Ieee Journal On Selected Topics in Quantum Electronics. 8: 880-890. DOI: 10.1109/Jstqe.2002.801689  0.84
2002 Descour MR, Kärkkäinen AHO, Rogers JD, Liang C, Weinstein RS, Rantala JT, Kilic B, Madenci E, Richards-Kortum RR, Anslyn EV, Dupuis RD, Schul RJ, Willison CG, Tigges CP. Toward the development of miniaturized imaging systems for detection of pre-cancer Ieee Journal of Quantum Electronics. 38: 122-130. DOI: 10.1109/3.980264  0.84
2002 Zhu TG, Denyszyn JC, Chowdhury U, Wong MM, Dupuis RD. AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition Ieee Journal On Selected Topics in Quantum Electronics. 8: 298-301. DOI: 10.1109/2944.999184  0.84
2002 Martínez RE, Appelbaum I, Reddy CV, Sheth R, Russell KJ, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Electron transport through strongly coupled AlInP/GaInP superlattices Applied Physics Letters. 81: 3576-3578. DOI: 10.1063/1.1519350  0.84
2002 Collins CJ, Chowdhury U, Wong MM, Yang B, Beck AL, Dupuis RD, Campbell JC. Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode Applied Physics Letters. 80: 3754-3756. DOI: 10.1063/1.1480484  0.84
2002 Ryou JH, Dupuis RD, Walter G, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Properties of InP self-assembled quantum dots embedded in In 0.49(Al xGa 1-x) 0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition Journal of Applied Physics. 91: 5313-5320. DOI: 10.1063/1.1454205  0.84
2002 Readinger ED, Mohney SE, Pribicko TG, Wang JH, Schweitz KO, Chowdhury U, Wong MM, Dupuis RD, Pophristic M, Guo SP. Ohmic contacts to Al-rich n-AlGaN Electronics Letters. 38: 1230-1231. DOI: 10.1049/El:20020800  0.84
2002 Collins CJ, Chowdhury U, Wong MM, Yang B, Beck AL, Dupuis RD, Campbell JC. Improved solar-blind external quantum efficiency of back-illuminated AlxGa1-xN heterojunction pin photodiodes Electronics Letters. 38: 824-826. DOI: 10.1049/El:20020526  0.84
2002 Wong MM, Chowdhury U, Sicault D, Becher DT, Denyszyn JC, Zhu TG, Feng M, Dupuis RD. Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition Electronics Letters. 38: 428-429. DOI: 10.1049/El:20020247  0.84
2002 Zhu TG, Chowdhury U, Wong MM, Denyszyn JC, Dupuis RD. GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition Journal of Electronic Materials. 31: 406-410. DOI: 10.1007/S11664-002-0092-9  0.84
2001 Dupuis RD, Lambert DJH, Chowdhury U, Wong MM, Zhu TG, Shelton BS, Huang JJ, Caruth D, Feng M. Growth and Characteristics of AlGaN/GaN HBTs The Japan Society of Applied Physics. 2001: 334-335. DOI: 10.7567/Ssdm.2001.E-4-1  0.8
2001 Huang JJ, Hattendorf M, Feng M, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Dupuis RD. Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors Ieee Electron Device Letters. 22: 157-159. DOI: 10.1109/55.915594  0.84
2001 Shelton BS, Zhu TG, Lambert DJH, Dupuis RD. Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers Ieee Transactions On Electron Devices. 48: 1498-1502. DOI: 10.1109/16.936497  0.84
2001 Shelton BS, Lambert DJH, Huang JJ, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Liliental-Weber Z, Benarama M, Feng M, Dupuis RD. Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition Ieee Transactions On Electron Devices. 48: 490-494. DOI: 10.1109/16.906441  0.84
2001 Walter G, Holonyak N, Ryou JH, Dupuis RD. Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation Applied Physics Letters. 79: 3215-3217. DOI: 10.1063/1.1416158  0.84
2001 Walter G, Holonyak N, Ryou JH, Dupuis RD. Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures Applied Physics Letters. 79: 1956-1958. DOI: 10.1063/1.1405153  0.84
2001 Wraback M, Shen H, Carrano JC, Collins CJ, Campbell JC, Dupuis RD, Schurman MJ, Ferguson IT. Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN Applied Physics Letters. 79: 1303-1305. DOI: 10.1063/1.1398318  0.84
2001 Kwon HK, Eiting CJ, Lambert DJH, Shelton BS, Wong MM, Zhu TG, Dupuis RD. Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition Journal of Applied Physics. 90: 1817-1822. DOI: 10.1063/1.1330767  0.84
2001 Huang JJ, Caruth D, Feng M, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Dupuis RD. Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors Electronics Letters. 37: 393-395. DOI: 10.1049/El:20010263  0.84
2001 Zavada JM, Ellis CJ, Lin JY, Jiang HX, Seo JT, Hömmerich U, Thaik M, Wilson RG, Grudowski PA, Dupuis RD. Annealing behavior of luminescence from erbium-implanted GaN films Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 81: 127-131. DOI: 10.1016/S0921-5107(00)00689-9  0.84
2001 Ryou JH, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R, Mintairov A, Merz JL. Growth and characterizations of InP self-assembled quantum dots embedded in InAlP grown on GaAs substrates Journal of Electronic Materials. 30: 471-476. DOI: 10.1007/S11664-001-0085-0  0.84
2001 Wong MM, Chowdhury U, Collins CJ, Yang B, Denyszyn JC, Kim KS, Campbell JC, Dopuis RD. High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 333-336. DOI: 10.1002/1521-396X(200111)188:1<333::Aid-Pssa333>3.0.Co;2-X  0.36
2001 Zhu TG, Chowdhury U, Wong MM, Kim KS, Denyszyn JC, Dupuis RD. GaN and AlxGa1-xN p-i-n High-Voltage Rectifiers Grown by Metalorganic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 301-305. DOI: 10.1002/1521-396X(200111)188:1<301::Aid-Pssa301>3.0.Co;2-G  0.84
2001 Lamarre P, Hairston A, Tobin SP, Wong KK, Sood AK, Reine MB, Pophristic M, Birkham R, Ferguson IT, Singh R, Eddy CR, Chowdhury U, Wong MM, Dupuis RD, Kozodoy P, et al. AlGaN UV focal plane arrays Physica Status Solidi (a). 188: 289-292. DOI: 10.1002/1521-396X(200111)188:1<289::Aid-Pssa289>3.0.Co;2-U  0.8
2001 Campbell JC, Collins CJ, Wong MM, Chowdhury U, Beck AL, Dupuis RD. High Quantum Efficiency at Low Bias AlxGa1-xN p-i-n Photodiodes Physica Status Solidi (a) Applied Research. 188: 283-287. DOI: 10.1002/1521-396X(200111)188:1<283::Aid-Pssa283>3.0.Co;2-H  0.84
2001 Wraback M, Shen H, Bellotti E, Carrano JC, Collins CJ, Campbell JC, Dupuis RD, Schurman MJ, Ferguson IT. Band structure effects on the transient electron velocity overshoot in GaN Physica Status Solidi (B) Basic Research. 228: 585-588. DOI: 10.1002/1521-3951(200111)228:2<585::Aid-Pssb585>3.0.Co;2-Z  0.84
2000 Wraback M, Shen H, Eiting CJ, Carrano JC, Dupuis RD. Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth Mrs Internet Journal of Nitride Semiconductor Research. 5: 782-788. DOI: 10.1557/S109257830000507X  0.68
2000 Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Dupuis RD, Eiting CJ. Mg segregation, difficulties of p-doping in gan Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004695  0.84
2000 Ryou JH, Chowdhuiy U, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R. Self-assembled iii-phospide quantum dots grown by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 583: 39-44. DOI: 10.1557/Proc-583-39  0.84
2000 Shelton BS, Zhu TG, Wong MM, Kwon HK, Eiting CJ, Lambert DJH, Lirini SP, Dupuis RD. Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching and an ultrasonic treatment Electrochemical and Solid-State Letters. 3: 87-89. DOI: 10.1149/1.1390966  0.84
2000 Campbell JC, Li T, Wang S, Beck AL, Collins CJ, Yang B, Lambert DJH, Dupuis RD, Carrano JC, Schurman MJ, Ferguson IT. AlGaN/GaN ultraviolet photodetectors Proceedings of Spie - the International Society For Optical Engineering. 4134: 124-132. DOI: 10.1117/12.405335  0.84
2000 Yang B, Li T, Heng K, Collins C, Wang S, Carrano JC, Dupuis RD, Campbell JC, Schurman MJ, Ferguson IT. Low dark current GaN avalanche photodiodes Ieee Journal of Quantum Electronics. 36: 1389-1391. DOI: 10.1109/3.892557  0.48
2000 Yang B, Heng K, Li T, Collins CJ, Wang S, Dupuis RD, Campbell JC, Schurman MJ, Ferguson IT. 32/spl times/32 ultraviolet Al/sub 0.1/Ga/sub 0.9/N/GaN p-i-n photodetector array Ieee Journal of Quantum Electronics. 36: 1229-1231. DOI: 10.1109/3.890260  0.48
2000 Zhu TG, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Dupuis RD. High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching Applied Physics Letters. 77: 2918-2920. DOI: 10.1063/1.1322050  0.8
2000 Kwon HK, Eiting CJ, Lambert DJH, Wong MM, Dupuis RD, Liliental-Weber Z, Benamara M. Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 77: 2503-2505. DOI: 10.1063/1.1318396  0.8
2000 Reddy CV, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure Applied Physics Letters. 77: 1167-1169. DOI: 10.1063/1.1289264  0.84
2000 Reddy CV, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Imaging and local current transport measurements of AlInP quantum dots grown on GaP Applied Physics Letters. 76: 1437-1439. DOI: 10.1063/1.126056  0.84
2000 Zhu TG, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Kwon HK, Dupuis RD. High-voltage GaN pin vertical rectifiers with 2 μm thick i-layer Electronics Letters. 36: 1971-1972. DOI: 10.1049/El:20001329  0.84
2000 Li T, Lambert DJH, Beck AL, Collins CJ, Yang B, Wong MM, Chowdhury U, Dupuis RD, Campbell JC. Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors Electronics Letters. 36: 1581-1583. DOI: 10.1049/El:20001110  0.84
2000 Huang JJ, Hattendorf M, Feng M, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Dupuis RD. Graded-emitter AlGaN/GaN heterojunction bipolar transistors Electronics Letters. 36: 1239-1240. DOI: 10.1049/El:20000887  0.84
2000 Shelton BS, Huang JJ, Lambert DJH, Zhu TG, Wong MM, Eiting CJ, Kwon HK, Feng M, Dupuis RD. AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition Electronics Letters. 36: 80-81. DOI: 10.1049/El:20000053  0.84
2000 Lambert DJH, Huang JJ, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Liliental-Weber Z, Benarama M, Feng M, Dupuis RD. Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition Journal of Crystal Growth. 221: 730-733. DOI: 10.1016/S0022-0248(00)00808-3  0.84
2000 Kwon HK, Eiting CJ, Lambert DJH, Shelton BS, Wong MM, Zhu TG, Dupuis RD. Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 221: 362-367. DOI: 10.1016/S0022-0248(00)00714-4  0.84
2000 Ki Kwon H, Eiting CJ, Lambert DJH, Wong MM, Shelton BS, Zhu TG, Liliental-Weber Z, Benamura M, Dupuis RD. Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 221: 240-245. DOI: 10.1016/S0022-0248(00)00692-8  0.84
2000 Tinkham BP, Dupuis RD. Photoluminescence properties of Zn-doped heterostructures having native-oxide layers Journal of Applied Physics. 87: 203-206.  0.84
1999 Liliental-Weber Z, Benamara M, Swider W, Washburn J, Park J, Grudowski PA, Eiting CJ, Dupuis RD. TEM study of defects in laterally overgrown GaN layers Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300002891  0.84
1999 Wraback M, Shen H, Eiting CJ, Carrano JC, Dupuis RD. Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.55  0.68
1999 Benamara M, Liliental-Weber Z, Swider W, Washburn J, Dupuis RD, Grudowski PA, Eiting CJ, Yang JW, Khan MA. Atomic scale analysis of InGaN multi-quantum wells Materials Research Society Symposium - Proceedings. 572: 357-362. DOI: 10.1557/Proc-572-357  0.84
1999 Dupuis RD, Grudowski PA, Eiting CJ, Park J. Growth of III-N materials and devices by metalorganic chemical vapor deposition Semiconductors. 33: 965-969. DOI: 10.1134/1.1187813  0.68
1999 Shiojima K, Woodall JM, Eiting CJ, Grudowski PA, Dupuis RD. Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts Journal of Vacuum Science & Technology B. 17: 2030-2033. DOI: 10.1116/1.590866  0.68
1999 Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Lambert DJH, Eiting CJ, Dupuis RD. Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition Applied Physics Letters. 75: 4159-4161. DOI: 10.1063/1.125568  0.84
1999 Kwon HK, Eiting CJ, Lambert DJH, Shelton BS, Wong MM, Zhu T-, Dupuis RD. Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure Applied Physics Letters. 75: 2788-2790. DOI: 10.1063/1.125150  0.8
1999 Zavada JM, Mair RA, Ellis CJ, Lin JY, Jiang HX, Wilson RG, Grudowski PA, Dupuis RD. Optical transitions in Pr-implanted GaN Applied Physics Letters. 75: 790-792. DOI: 10.1063/1.124514  0.44
1999 Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Dupuis RD, Eiting CJ. Ordering in bulk GaN : Mg samples: defects caused by Mg doping Physica B: Condensed Matter. 273: 124-129. DOI: 10.1016/S0921-4526(99)00422-6  0.84
1999 Dupuis RD, Eiting CJ, Grudowski PA, Hsia H, Tang Z, Becher D, Kuo H, Stillman GE, Feng M. Activation of silicon ion-implanted gallium nitride by furnance annealing Journal of Electronic Materials. 28: 319-324. DOI: 10.1007/S11664-999-0034-X  0.72
1999 Shiojima K, McInturff DT, Woodall JM, Grudowski PA, Eiting CJ, Dupuis RD. Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p-and n- type GaN Journal of Electronic Materials. 28: 228-233. DOI: 10.1007/S11664-999-0019-9  0.68
1999 Shelton BS, Wong MM, Zhu T-, Eiting CJ, Lambert DJH, Lin DE, Dupuis RD. Dependence of Device Characteristics on the Intrinsic Material Properties of High‐Performance AlGaN/GaN HEMTs Physica Status Solidi (a). 176: 213-217. DOI: 10.1002/(Sici)1521-396X(199911)176:1<213::Aid-Pssa213>3.0.Co;2-9  0.8
1999 Eiting CJ, Lambert DJH, Kwon HK, Shelton BS, Wong MM, Zhu TG, Dupuis RD. Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition Physica Status Solidi B-Basic Solid State Physics. 216: 193-197. DOI: 10.1002/(Sici)1521-3951(199911)216:1<193::Aid-Pssb193>3.0.Co;2-K  0.8
1998 Yu H, Htoon H, DeLozanne A, Shih CK, Grudowski PA, Dupuis RD, Zeng K, Mair R, Lin JY, Jiang HX. Dynamics of localized excitons in InGaN/GaN quantum wells Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2215-2217. DOI: 10.1116/1.590150  0.84
1998 Eiting CJ, Grudowski PA, Dupuis RD, Hsia H, Tang Z, Becher D, Kuo H, Stillman GE, Feng M. Activation studies of low-dose Si implants in gallium nitride Applied Physics Letters. 73: 3875-3877. DOI: 10.1063/1.122922  0.72
1998 Park J, Grudowski PA, Eiting CJ, Dupuis RD. Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition Applied Physics Letters. 73: 333-335. DOI: 10.1063/1.121825  0.68
1998 Dupuis RD, Park J, Grudowski PA, Eiting CJ, Liliental-Weber Z. Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition Journal of Crystal Growth. 195: 340-345. DOI: 10.1016/S0022-0248(98)00674-5  0.68
1998 Grudowski PA, Eiting CJ, Dupuis RD. Properties of InGaN multiple-quantum-well heterostructures grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 189: 103-108. DOI: 10.1016/S0022-0248(98)00181-X  0.68
1998 Eiting CJ, Grudowski PA, Dupuis RD. P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition Journal of Electronic Materials. 27: 206-209. DOI: 10.1007/S11664-998-0388-5  0.68
1997 Eiting CJ, Grudowski PA, Park J, Lambert DJH, Shelton BS, Dupuis RD. Characteristics of Mg‐Doped GaN Grown by Metallorganic Chemical Vapor Deposition Journal of the Electrochemical Society. 144. DOI: 10.1149/1.1837862  0.72
1997 Shmagin IK, Muth JF, Kolbas RM, Dupuis RD, Grudowski PA, Eiting CJ, Park J, Shelton BS, Lambert DJH. Optical data storage in InGaN/GaN heterostructures Applied Physics Letters. 71: 1382-1384. DOI: 10.1063/1.119900  0.84
1997 Eiting CJ, Grudowski PA, Dupuis R. Growth of low resistivity p-type GaN by metal organic chemical vapour deposition Electronics Letters. 33: 1987-1989. DOI: 10.1049/El:19971257  0.68
1997 Islam MR, Dupuis RD, Holmes AL, Curtis AP, Gardner NF, Stillman GE, Baker JE, Hull R. Luminescence characteristics of InAlP-InGaP heterostructures having native-oxide windows Journal of Crystal Growth. 170: 413-417. DOI: 10.1016/S0022-0248(96)00587-8  0.84
1997 Chelakara RV, Grudowski PA, Dupuis RD. Design and growth of strained-superlattice-barrier heterostructures for use in light-emitting devices Journal of Crystal Growth. 170: 595-599. DOI: 10.1016/S0022-0248(96)00586-6  0.44
1997 Grudowski PA, Holmes AL, Eiting CJ, Dupuis RD. The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD Journal of Electronic Materials. 26: 257-261. DOI: 10.1007/S11664-997-0160-2  0.84
1997 Eiting CJ, Grudowski PA, Dupuis RD. The X-ray characterization of InGaN and AiGaN heterostructures for blue-light emitters Jom. 49: 27-30. DOI: 10.1007/Bf02914347  0.68
1997 Dupuis RD, Chelakara RV, Tinkham BP. Effects of InAlAs strained-superlattice barriers upon the properties of InGaAlAs/InP quantum wells and double heterostructures Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 220-221.  0.84
1996 Dupuis RD, Holmes AL, Grudowski PA, Fertitta KG, Ponce FA. High-quality III-V nitrides grown by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 395: 183-188. DOI: 10.1557/Proc-395-183  0.84
1996 Grudowski PA, Chelakara RV, Dupuis RD. An InAlAs/InGaAs metal‐oxide‐semiconductor field effect transistor using the native oxide of InAlAs as a gate insulation layer Applied Physics Letters. 69: 388-390. DOI: 10.1063/1.118070  0.44
1996 Grudowski PA, Holmes AL, Eiting CJ, Dupuis RD. The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 69: 3626-3628. DOI: 10.1063/1.117004  0.84
1996 Islam MR, Dupuis RD, Holmes AL, Gardner NF, Curtis AP, Stillman GE, Baker JE. Enhanced luminescence from InAIP-InGaP quantum wells with native-oxide windows Electronics Letters. 32: 401-402. DOI: 10.1049/El:19960235  0.84
1996 Grudowski PA, Holmes AL, Eiting CJ, Dupuis RD. The luminescence characteristics of GaN heteroepitaxial films Jom. 48: 46-49. DOI: 10.1007/Bf03223027  0.84
1995 Murtaza SS, Tan I-, Chelakara RV, Islam MR, Srinivasan A, Anselm KA, Bowers JE, Hu EL, Dupuis RD, Streetman BG, Campbell JC. High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths Ieee Photonics Technology Letters. 7: 679-681. DOI: 10.1109/68.388763  0.48
1995 Ries MJ, Holonyak N, Chen EI, Maranowski SA, Islam MR, Holmes AL, Dupuis RD. Visible-spectrum (λ=650 nm) photopumped (pulsed, 300 K) laser operation of a vertical-cavity AlAs-AlGaAs/InAlP-InGaP quantum well heterostructure utilizing native oxide mirrors Applied Physics Letters. 67: 1107. DOI: 10.1063/1.114976  0.84
1995 Richard TA, Maranowski SA, Holonyak N, Chen EI, Ries MJ, Neff JG, Grudowski PA, Dupuis RD. Enhanced hot-carrier spontaneous and stimulated recombination in a photopumped vertical cavity AlxGa1-xAs-GaAs quantum well heterostructure with multiple top and bottom native oxide mirrors Applied Physics Letters. 589. DOI: 10.1063/1.114022  0.84
1995 Holmes AL, Islam MR, Chelakara RV, Ciuba FJ, Dupuis RD, Ries MJ, Chen EI, Maranowski SA, Holonyak N. High-reflectivity visible-wavelength semiconductor native oxide Bragg reflectors grown by metalorganic chemical vapor deposition Applied Physics Letters. 66: 2831. DOI: 10.1063/1.113444  0.84
1995 Islam MR, Chelakara RV, Neff JG, Fertitta KG, Grudowski PA, Holmes AL, Ciuba FJ, Dupuis RD, Fouquet JE. The growth and characterization of AlGaAs double heterostructures for the evaluation of reactor and source quality Journal of Electronic Materials. 24: 787-792. DOI: 10.1007/Bf02659741  0.44
1995 Fertitta KG, Holmes AL, Ciuba FJ, Dupuis RD, Ponce FA. High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition Journal of Electronic Materials. 24: 257-261. DOI: 10.1007/Bf02659684  0.4
1994 Fertitta KG, Holmes AL, Neff JG, Ciuba FJ, Dupuis RD. High‐quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition Applied Physics Letters. 65: 1823-1825. DOI: 10.1063/1.112855  0.32
1994 Chelakara RV, Islam MR, Neff JG, Fertitta KG, Holmes AL, Ciuba FJ, Dupuis RD, Richard TA, Holonyak N, Hsieh KC. Short-Wavelength Room-Temperature Continuous-Wave Laser Operation Of Inalp-Ingap Superlattices Grown By Metalorganic Chemical Vapor Deposition Applied Physics Letters. 65: 854-856. DOI: 10.1063/1.112181  0.48
1994 Holmes AL, Fertitta KG, Ciuba FJ, Dupuis RD. X-ray diffraction studies of high-quality GaN heteroepitaxial films grown by metal organic chemical vapour deposition Electronics Letters. 30: 1252-1254. DOI: 10.1049/El:19940820  0.32
1994 Chelakara RV, Islam MR, Neff JG, Fertitta KG, Holmes AL, Ciuba FJ, Dupuis RD. Growth of high-quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition Journal of Crystal Growth. 145: 179-186. DOI: 10.1016/0022-0248(94)91047-2  0.32
1993 Lei C, Huang Z, Deppe DG, Pinzone CJ, Dupuis RD. Spectral interference effects in the light emission from Fabry-Perot cavities Journal of Applied Physics. 73: 2700-2704. DOI: 10.1063/1.353041  0.84
1993 Lei C, Pinzone CJ, Huang Z, Huffaker DL, Deppe DG, Dupuis RD. Room temperature spontaneous emission in five-micron-long Fabry-Pérot vertical cavities Journal of Applied Physics. 73: 3153-3157. DOI: 10.1063/1.352984  0.84
1992 Dupuis RD, Neff JG, Pinzone CJ. Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 124: 558-564. DOI: 10.1016/0022-0248(92)90517-M  0.84
1991 Dupuis RD, Deppe DG, Pinzone CJ, Gerrard ND, Singh S, Zydzik GJ, van der Ziel JP, Green CA. In 0.47Ga0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength Journal of Crystal Growth. 107: 790-795. DOI: 10.1016/0022-0248(91)90559-N  0.84
1990 Dallesasse JM, El-Zein N, Holonyak N, Hsieh KC, Burnham RD, Dupuis RD. Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures Journal of Applied Physics. 68: 2235-2238. DOI: 10.1063/1.346527  0.48
1990 Pinzone CJ, Gerrard ND, Dupuis RD, Ha NT, Luftman HS. Heavily-doped n-type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin Journal of Applied Physics. 67: 6823-6829. DOI: 10.1063/1.345072  0.84
1990 Nam DW, Holonyak N, Vesely EJ, Dupuis RD. Two-phonon laser operation (4.2-77 K) of photopumped AlxGa 1-xAs-GaAs quantum well heterostructures Applied Physics Letters. 57: 46-48. DOI: 10.1063/1.103573  0.84
1990 Deppe DG, Gerrard ND, Pinzone CJ, Dupuis RD, Schubert EF. Quarter-wave Bragg reflector stack of InP-In0.53Ga 0.47As for 1.65 μm wavelength Applied Physics Letters. 56: 315-317. DOI: 10.1063/1.102814  0.84
1988 Wilson BA, Bonner CE, Miller RC, Sputz SK, Harris TD, Lamont MG, Dupuis RD, Vernon SM, Haven VE, Lum RM, Klingert JK. Photoluminescence studies of heteroepitaxial gaas on si Journal of Electronic Materials. 17: 115-119. DOI: 10.1007/BF02652140  0.84
1987 Van Der Ziel JP, Dupuis RD, Logan RA, Pinzone CJ. Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates Applied Physics Letters. 51: 89-91. DOI: 10.1063/1.98997  0.84
1987 Van Der Ziel JP, Dupuis RD, Logan RA, Mikulyak RM, Pinzone CJ, Savage A. Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates Applied Physics Letters. 50: 454-456. DOI: 10.1063/1.98266  0.84
1987 Dupuis RD, Van Der Ziel JP, Logan RA, Brown JM, Pinzone CJ. Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition Applied Physics Letters. 50: 407-409. DOI: 10.1063/1.98185  0.84
1980 Holonyak N, Kolbas RM, Laidig WD, Vojak BA, Hess K, Dupuis RD, Dapkus PD. PHONON-ASSISTED RECOMBINATION AND STIMULATED EMISSION IN QUANTUM-WELL Al//xGa//1// minus //xAs-GaAs HETEROSTRUCTURES. Journal of Applied Physics. 51: 1328-1337. DOI: 10.1063/1.327818  0.84
1979 Holonyak N, Dupuis RD, Kolbas RM, Dapkus PD, Laidig WD, Vojak BA, Chin R. TA-B7 Phonon-Assisted Recombination in Quantum-Well MO-CVD AlxGa1−xAs-GaAs Heterostructure Lasers Ieee Transactions On Electron Devices. 26: 1837. DOI: 10.1109/T-Ed.1979.19726  0.48
1979 Vojak BA, Holonyak N, Chin R, Rezek EA, Dupuis RD, Dapkus PD. Tunnel injection and phonon‐assisted recombination in multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 50: 5835-5840. DOI: 10.1063/1.326730  0.48
1979 Vojak BA, Kirchoefer SW, Holonyak N, Chin R, Dupuis RD, Dapkus PD. Low‐temperature operation of multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 50: 5830-5834. DOI: 10.1063/1.326729  0.48
1978 Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. MP-B1 Photopumped MO-CVD Quantum-Well Al<inf>x</inf>Ga<inf>1−x</inf>As GaAs-AlxGa<inf>1−x</inf>As Heterostructure Lasers (x = 0.4–0.6, Lz ⩽ 200 Å T = 4.2–300 K) Ieee Transactions On Electron Devices. 25: 1342. DOI: 10.1109/T-Ed.1978.19293  0.84
1978 Holonyak N, Kolbas RM, Laidig WD, Vojak BA, Dupuis RD, Dapkus PD. Low-threshold continuous laser operation (300-337°K) of multilayer MO-CVD AlxGa1-xAs-GaAs quantum-well heterostructures Applied Physics Letters. 33: 737-739. DOI: 10.1063/1.90522  0.84
1978 Holonyak N, Kolbas RM, Rezek EA, Chin R, Dupuis RD, Dapkus PD. Bandfilling in metalorganic chemical vapor deposited AlxGa 1-xAs-GaAs-AlxGa1-xAs quantum-well heterostructure lasers Journal of Applied Physics. 49: 5392-5397. DOI: 10.1063/1.324494  0.84
1973 Holonyak N, Dupuis R, Macksey H, Zack G, Craford M, Finn D. Photoexcited resonance-enhanced nitrogen-trap GaAs 1-x P x :N laser Ieee Journal of Quantum Electronics. 9: 379-383. DOI: 10.1109/Jqe.1973.1077464  0.48
1973 Macksey HM, Holonyak N, Dupuis RD, Campbell JC, Zack GW. Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution Journal of Applied Physics. 44: 1333-1341. DOI: 10.1063/1.1662349  0.48
1973 Macksey HM, Lee MH, Holonyak N, Hitchens WR, Dupuis RD, Campbell JC. Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx(x [inverted lazy s]0.4) Journal of Applied Physics. 44: 5035-5040. DOI: 10.1063/1.1662083  0.48
1972 Holonyak N, Scifres DR, MacKsey HM, Dupuis RD, Moroz YS, Duke CB, Kleiman GG, Williams FV. Stimulated emission and laser operation (cw, 77°K) associated with deep isoelectronic traps in indirect semiconductors Physical Review Letters. 28: 230-233. DOI: 10.1103/Physrevlett.28.230  0.84
1972 Scifres DR, Macksey HM, Holonyak N, Dupuis RD, Zack GW, Duke CB, Kleiman GG, Kunz AB. Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap in In 1-x Ga x P Physical Review B. 5: 2206-2215. DOI: 10.1103/Physrevb.5.2206  0.48
1972 Dupuis RD, Holonyak N, Macksey HM, Zack GW. Mode‐coupling effects in thin platelet semiconductor lasers Journal of Applied Physics. 43: 3801-3803. DOI: 10.1063/1.1661814  0.48
1972 Scifres DR, Holonyak N, Macksey HM, Dupuis RD, Zack GW, Craford MG, Groves WO, Keune DL. Stimulated Emission and Laser Operation (cw, 77°K) of Direct and Indirect GaAs1−xPx on Nitrogen Isoelectronic Trap Transitions Journal of Applied Physics. 43: 2368-2375. DOI: 10.1063/1.1661505  0.48
1972 Holonyak N, Scifres DR, Macksey HM, Dupuis RD. Long‐Wavelength Shift in the Operation of Lightly Doped Semiconductor Lasers Journal of Applied Physics. 43: 2302-2306. DOI: 10.1063/1.1661495  0.48
1972 Scifres DR, Macksey HM, Holonyak N, Dupuis RD. Optically Pumped In1−xGax P Platelet Lasers from the Infrared to the Yellow (8900−5800 Å, 77°K) Journal of Applied Physics. 43: 1019-1022. DOI: 10.1063/1.1661211  0.48
1972 Duke CB, Smith DL, Kleiman GG, Macksey HM, Holonyak N, Dupuis RD, Campbell JC. Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow‐green (λ≲5560 Å, ℏ ω≳2.23 eV) Journal of Applied Physics. 43: 5134-5140. DOI: 10.1063/1.1661085  0.48
1972 Holonyak N, Dupuis RD, Macksey HM, Craford MG, Groves WO. Spontaneous and stimulated photoluminescence on nitrogen A‐line and NN‐pair line transitions in GaAs1−x Px : N Journal of Applied Physics. 43: 4148-4153. DOI: 10.1063/1.1660889  0.48
1972 Scifres DR, Holonyak N, Macksey HM, Dupuis RD. Optically Pumped Volume‐Excited cw Room‐Temperature In1−x Gax P (x ≤ 0.60) Platelet Lasers Applied Physics Letters. 20: 184-186. DOI: 10.1063/1.1654101  0.48
1972 Holonyak N, Scifres DR, Macksey HM, Dupuis RD. In1−x Gax P:N Laser Operation (cw, 77°K) on the Nitrogen A‐Line Transition in Indirect Crystals (x ≥ 0.74) and in Direct Crystals above the Fundamental Band Edge (x ≥ 0.71) Applied Physics Letters. 20: 11-14. DOI: 10.1063/1.1653957  0.48
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