Susan E. Babcock - Publications

Affiliations: 
University of Wisconsin, Madison, Madison, WI 
Area:
Materials Science Engineering

95 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Wood AW, Collar K, Li J, Brown AS, Babcock SE. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films. Nanotechnology. 27: 115704. PMID 26876494 DOI: 10.1088/0957-4484/27/11/115704  0.48
2016 Jackson DHK, Laskar MR, Fang S, Xu S, Ellis RG, Li X, Dreibelbis M, Babcock SE, Mahanthappa MK, Morgan D, Hamers RJ, Kuech TF. Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4943385  0.48
2016 Li J, Collar K, Jiao W, Kong W, Kuech TF, Babcock SE, Brown A. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix Applied Physics Letters. 108. DOI: 10.1063/1.4953408  0.48
2016 Kuech TF, Babcock SE, Mawst L. Growth far from equilibrium: Examples from III-V semiconductors Applied Physics Reviews. 3. DOI: 10.1063/1.4944801  0.48
2016 Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, Babcock SE, Kuech TF, Mawst LJ. Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics Journal of Crystal Growth. DOI: 10.1016/j.jcrysgro.2016.04.039  0.48
2016 Chen W, Ronsheim PA, Wood AW, Forghani K, Guan Y, Kuech TF, Babcock SE. Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1-xBix/GaAs superlattice Journal of Crystal Growth. 446: 27-32. DOI: 10.1016/j.jcrysgro.2016.04.031  0.48
2016 Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, Kuech TF, Li X, Sigler C, Babcock SE, Earles T. Regrowth of quantum cascade laser active regions on metamorphic buffer layers Journal of Crystal Growth. DOI: 10.1016/j.jcrysgro.2016.01.029  0.48
2015 Mawst LJ, Rajeev A, Kirch JD, Kim TW, Botez D, Zutter B, Buelow P, Schulte K, Kuech TF, Wood A, Babcock SE, Earles T. Quantum-cascade-laser active regions on metamorphic buffer layers Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2075457  0.48
2015 Wood AW, Babcock SE, Li J, Brown AS. Increased bismuth concentration in MBE GaAs1-xBix films by oscillating III/V flux ratio during growth Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4916575  0.48
2015 Wood AW, Guan Y, Forghani K, Anand A, Kuech TF, Babcock SE. Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1-xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging Apl Materials. 3. DOI: 10.1063/1.4915301  0.48
2014 Schulte KL, Zutter BT, Wood AW, Babcock SE, Kuech TF. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/3/035013  0.48
2014 Forghani K, Guan Y, Losurdo M, Luo G, Morgan D, Babcock SE, Brown AS, Mawst LJ, Kuech TF. GaAs1-y-zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs Applied Physics Letters. 105. DOI: 10.1063/1.4895116  0.48
2014 Wood AW, Guan Y, Forghani K, Mawst LJ, Kuech TF, Babcock SE. Unexpected bismuth concentration profiles in MOVPE GaAs<inf>1-x</inf>Bi<inf>x</inf> films revealed by HAADF STEM imaging Microscopy and Microanalysis. 20: 196-197. DOI: 10.1017/S1431927614002700  0.48
2014 Forghani K, Guan Y, Wood AW, Anand A, Babcock SE, Mawst LJ, Kuech TF. Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy Journal of Crystal Growth. 395: 38-45. DOI: 10.1016/j.jcrysgro.2014.03.014  0.48
2013 Schulte KL, Wood AW, Reedy RC, Ptak AJ, Meyer NT, Babcock SE, Kuech TF. Heteroepitaxy of GaAs on (001)→ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy Journal of Applied Physics. 113. DOI: 10.1063/1.4803037  0.48
2012 Paulson CA, Jha S, Song X, Rathi M, Babcock SE, Mawst L, Kuech TF. The effect of helium ion implantation on the relaxation of strained InGaAs thin films Thin Solid Films. 520: 2147-2154. DOI: 10.1016/j.tsf.2011.09.028  0.48
2012 Mahathaninwong N, Zhou Y, Babcock SE, Plookphol T, Wannasin J, Wisutmethangoon S. Creep rupture behavior of semi-solid cast 7075-T6 Al alloy Materials Science and Engineering A. 556: 107-113. DOI: 10.1016/j.msea.2012.06.064  0.48
2011 Jha S, Wiedmann MK, Kuan TS, Song X, Babcock SE, Kuech TF. Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography Journal of Crystal Growth. 315: 91-95. DOI: 10.1016/j.jcrysgro.2010.07.050  0.48
2011 Kuech TF, Jha S, K.wiedmann M, Paulson CA, Babcock SE, Kuan TS, Mawst LJ, Kirch J, Kim TW. Metamorphic and non-conventional 'Buffer' layers Conference Proceedings - International Conference On Indium Phosphide and Related Materials 0.48
2010 Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR, Kuan TS. InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers Journal of Crystal Growth. 312: 1165-1169. DOI: 10.1016/j.jcrysgro.2009.12.057  0.48
2010 Jha S, Liu CC, Park JH, Wiedmann MK, Kuan TS, Babcock SE, Mawst LJ, Nealey PF, Kuech TF. Block copolymer templating for formation of quantum dots and lattice-mismatched semiconductor structures Materials Research Society Symposium Proceedings. 1258: 187-192.  0.48
2009 Rathi MK, Khandekar AA, Song X, Babcock SE, Mawst LJ, Kuech TF. GaAsSb-GaAsN-based type-II 'W' structures for MID-IR emission Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 263-266. DOI: 10.1109/ICIPRM.2009.5012496  0.48
2009 Kuech TF, Jha S, Kuan TS, Babcock SE, Mawst LJ. Defect reduction in large lattice mismatch epitaxial growth through block copolymer full wafer patterning Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 63-64. DOI: 10.1109/ICIPRM.2009.5012416  0.48
2009 Huang JYT, Mawst LJ, Kuech TF, Song X, Babcock SE, Kim CS, Vurgaftman I, Meyer JR, Holmes AL. Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/2/025108  0.48
2009 Rathi MK, Khandekar AA, Song X, Babcock SE, Mawst LJ, Kuech TF. High antimony content GaAs1-z Nz - GaAs1-y Sby type-II "w" structure for long wavelength emission Journal of Applied Physics. 106. DOI: 10.1063/1.3226000  0.48
2009 Jha S, Liu CC, Kuan TS, Babcock SE, Nealey PF, Park JH, Mawst LJ, Kuech TF. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography Applied Physics Letters. 95. DOI: 10.1063/1.3204013  0.48
2009 Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR. InAsyP1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers Optics Infobase Conference Papers 0.48
2009 Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR. InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009 0.48
2008 Kuech TF, Khandekar AA, Rathi M, Mawst LJ, Huang JYT, Song X, Babcock SE, Meyer JR, Vurgaftman I. MOVPE growth of antimonide-containing alloy materials for long wavelength applications Journal of Crystal Growth. 310: 4826-4830. DOI: 10.1016/j.jcrysgro.2008.09.006  0.48
2008 Jha S, Song X, Babcock SE, Kuech TF, Wheeler D, Wu B, Fay P, Seabaugh A. Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy Journal of Crystal Growth. 310: 4772-4775. DOI: 10.1016/j.jcrysgro.2008.07.048  0.48
2008 Huang JYT, Xu DP, Song X, Babcock SE, Kuech TF, Mawst LJ. Growth of strained GaAs1-ySby and GaAs1-y-zSbyNz quantum wells on InP substrates Journal of Crystal Growth. 310: 2382-2389. DOI: 10.1016/j.jcrysgro.2007.11.207  0.48
2008 Song X, Babcock SE, Paulson CA, Kuech TF, Huang JYT, Xu DP, Park J, Mawst LJ. Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP Journal of Crystal Growth. 310: 2377-2381. DOI: 10.1016/j.jcrysgro.2007.11.018  0.48
2007 Huang JYT, Xu DP, Park JH, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR. Characteristics of strained GaAs1-ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates Journal of Physics D: Applied Physics. 40: 7656-7661. DOI: 10.1088/0022-3727/40/24/010  0.48
2007 Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy Journal of Crystal Growth. 303: 456-465. DOI: 10.1016/j.jcrysgro.2006.12.034  0.48
2007 Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy Journal of Crystal Growth. 298: 154-158. DOI: 10.1016/j.jcrysgro.2006.10.012  0.48
2007 Xu D, Huang JYT, Park JH, Mawst LJ, Kuech TF, Song X, Babcock SE. Characteristics of strained GaAsSb(N)/InP quantum wells grown by metalorganic chemical vapor deposition on InP substrates Materials Research Society Symposium Proceedings. 994: 111-116.  0.48
2007 Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Development of lateral epitaxial overgrown InAs microstructure on patterned (100) GaAs substrates Journal of Optoelectronics and Advanced Materials. 9: 1242-1245.  0.48
2006 Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (1 0 0) GaAs Journal of Crystal Growth. 292: 40-52. DOI: 10.1016/j.jcrysgro.2006.04.086  0.48
2005 Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. InAs growth and development of defect microstructure on GaAs Journal of Crystal Growth. 275. DOI: 10.1016/j.jcrysgro.2004.11.133  0.48
2003 Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates Applied Physics Letters. 83: 1977-1979. DOI: 10.1063/1.1609231  0.48
2002 Song X, Babcock SE, Eom CB, Larbalestier DC, Regan KA, Cava RJ, Bud'Ko SL, Canfield PC, Finnemore DK. Anisotropic grain morphology, crystallographic texture and their implications for flux pinning mechanisms in MgB2 pellets, filaments and thin films Superconductor Science and Technology. 15: 511-518. DOI: 10.1088/0953-2048/15/4/306  0.48
2002 Yang CY, Babcock SE, Ichinose A, Goyal A, Kroeger DM, Lee DF, List FA, Norton DP, Mathis JE, Paranthaman M, Park C. Microstructure of pulsed laser deposited YBa2Cu3O7-δ films on yttria-stabilized zirconia/CeO2 buffered biaxially textured Ni substrates Physica C: Superconductivity and Its Applications. 377: 333-347. DOI: 10.1016/S0921-4534(01)01285-0  0.48
2002 Suryanarayanan G, Khandekar AA, Hawkins BE, Kuech TF, Babcock SE. Lateral epitaxial overgrowth of InAs on (100) GaAs substrates Materials Research Society Symposium - Proceedings. 744: 9-14.  0.48
2001 Eom CB, Lee MK, Choi JH, Belenky LJ, Song X, Cooley LD, Naus MT, Patnaik S, Jiang J, Rikel M, Polyanskii A, Gurevich A, Cai XY, Bu SD, Babcock SE, et al. High critical current density and enhanced irreversibility field in superconducting MgB2 thin films. Nature. 411: 558-60. PMID 11385563 DOI: 10.1038/35079018  0.48
2001 Feldmann DM, Reeves JL, Polyanskii AA, Goyal A, Feenstra R, Lee DF, Paranthaman M, Kroeger DM, Christen DK, Babcock SE, Larbalestier DC. Magneto-optical imaging of transport currents in YBa2Cu3O7-x on RABiTS™ Ieee Transactions On Applied Superconductivity. 11: 3772-3775. DOI: 10.1109/77.919885  0.48
2001 Patnaik S, Cooley LD, Gurevich A, Polyanskii AA, Jiang J, Cai XY, Squitieri AA, Naus MT, Lee MK, Choi JH, Belenky L, Bu SD, Letteri J, Song X, Schlom DG, ... Babcock SE, et al. Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films Superconductor Science and Technology. 14: 315-319. DOI: 10.1088/0953-2048/14/6/304  0.48
2001 Tsu IF, Wang JL, Babcock SE, Polyanskii AA, Larbalestier DC, Sickafus KE. Structure and properties of an intragranular weak link in Bi2Sr2CaCu2O8+x single crystals Physica C: Superconductivity and Its Applications. 349: 8-18. DOI: 10.1016/S0921-4534(00)01523-9  0.48
2001 Feng Z, Lovell EG, Engelstad RL, Kuech TF, Babcock SE. Simulation of stress generation during GaN lateral epitaxial overgrowth Materials Research Society Symposium - Proceedings. 639.  0.48
2001 Aytug T, Kang BW, Cantoni C, Specht ED, Paranthaman M, Goyal A, Christen DK, Verebelyi DT, Wu JZ, Ericson RE, Thomas CL, Yang CY, Babcock SE. Growth and characterization of conductive SrRuO3 and LaNiO3 multilayers on textured Ni tapes for high-Jc YBa2Cu3O7-δ coated conductors Journal of Materials Research. 16: 2661-2669.  0.48
2000 Ichinose A, Yang CY, Daniels G, Liao SY, Larbalestier DC, Babcock SE, Kikuchi A, Tachikaw K, Akita S. Studies of the improvement in microstructure of Y2O3 buffer layers and its effect on YBa2Cu3O7-x film growth Superconductor Science and Technology. 13: 1023-1028. DOI: 10.1088/0953-2048/13/7/320  0.48
2000 Yang CY, Ichinose A, Babcock SE, Morrell JS, Mathis JE, Verebelyi DT, Paranthaman M, Beach DB, Christen DK. Microstructure of a high Jc, laser-ablated YBa2Cu3O7-δ/sol-gel deposited NdGaO3 buffer layer/(001) SrTiO3 multi-layer structure Physica C: Superconductivity and Its Applications. 331: 73-78. DOI: 10.1016/S0921-4534(99)00624-3  0.48
2000 Dunn KA, Babcock SE, Stone DS, Matyi RJ, Zhang L, Kuech TF. Dislocation arrangement in a thick LEO GaN film on sapphire Materials Research Society Symposium - Proceedings. 595.  0.48
2000 Dunn KA, Babcock SE, Stone DS, Matyi RJ, Zhang L, Kuech TF. Dislocation arrangement in a thick LEO GaN film on sapphire Materials Research Society Symposium - Proceedings. 595.  0.48
2000 Yang CY, Pashitski A, Polyanskii A, Larbalestier DC, Babcock SE, Goyal A, List FA, Park C, Paranthaman M, Norton DP, Lee DF, Kroeger B DM. Micro structural homogeneity and electromagnetic connectivity of YBa2Cu3O7-δ grown on rolling-assisted biaxially textured coated conductor substrates Physica C: Superconductivity and Its Applications. 329: 114-120.  0.48
2000 Feldmann DM, Reeves JL, Polyanskii AA, Kozlowski G, Biggers RR, Nekkanti RM, Maartense I, Tomsic M, Barnes P, Oberly CE, Peterson TL, Babcock SE, Larbalestier DC. Influence of nickel substrate grain structure on YBa2Cu3O7-x supercurrent connectivity in deformation-textured coated conductors Applied Physics Letters. 77: 2906-2908.  0.48
1999 Babcock SE. Roles for electron microscopy in establishing structure-property relationships for high T(c) superconductor grain boundaries Micron. 30: 449-461. DOI: 10.1016/S0968-4328(99)00046-3  0.48
1999 Ichinose A, Yang CY, Larbalestier DC, Babcock SE, Kikuchi A, Tachikawa K, Akita S. Growth conditions and microstructure of Y2O3 buffer layers on cube-textured Ni Physica C: Superconductivity and Its Applications. 324: 113-122. DOI: 10.1016/S0921-4534(99)00478-5  0.48
1999 Matsubara I, Paranthaman M, Singhal A, Vallet C, Lee DF, Martin PM, Hunt RD, Feenstra R, Yang CY, Babcock SE. Preparation of textured YBCO films using all-iodide precursors Physica C: Superconductivity and Its Applications. 319: 127-132. DOI: 10.1016/S0921-4534(99)00303-2  0.48
1999 Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of A1N on Si (111) deposited with metal organic vapor phase epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4.  0.48
1999 Render E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of ain on Si (111) deposited with metal organic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 537.  0.48
1999 Babcock SE, Dunn KA, Zhou M, Reeves JL, Kuech TF, Hansen DM, Moran PD. Microstructure of epitaxial (InGa)As on a borosilicate glass-bonded compliant substrate Materials Science Forum. 294: 783-786.  0.48
1999 Babcock SE, Yang CY, Reeves JL, Wu Y, Pashitski AE, Polyanskii A, Larbalestier DC, Goyal A, Paranthaman M, List FA, Norton DP, Kroeger DM, Ichinose A. Electromagnetic connectivity and microstructure in YBa2Cu3O7-δ films on rolling-assisted biaxially-textured substrates Materials Science Forum. 294: 165-168.  0.48
1998 Hansen DM, Moran PD, Dunn KA, Babcock SE, Matyi RJ, Kuech TF. Development of a glass-bonded compliant substrate Journal of Crystal Growth. 195: 144-150.  0.48
1998 Yang CY, Babcock SE, Goyal A, Paranthaman M, List FA, Norton DP, Kroeger DM, Ichinose A. Microstructure of electron-beam-evaporated epitaxial yttria-stabilized zirconia/CeO2 bilayers on biaxially textured Ni tape Physica C: Superconductivity and Its Applications. 307: 87-98.  0.48
1998 Tsu IF, Wang JL, Kaiser DL, Babcock SE. A comparison of grain boundary topography and dislocation network structure in bulk-scale [001] tilt bicrystals of Bi2Sr2CaCu2O8+x and YBa2Cu3O7-δ Physica C: Superconductivity and Its Applications. 306: 163-187.  0.48
1998 Cai XY, Gurevich A, Tsu IF, Kaiser DL, Babcock SE, Larbalestier DC. Large enhancement of critical-current density due to vortex matching at the periodic facet structure in YBa2Cu3O7-δ bicrystals Physical Review B - Condensed Matter and Materials Physics. 57: 10951-10958.  0.48
1997 Vargas JL, Zhang N, Kaiser DL, Babcock SE. Systematic copper concentration variations along grain boundaries in bulk-scale YBa2Cu3O7-δ bicrystals Physica C: Superconductivity and Its Applications. 292: 1-16.  0.48
1997 Zhou M, Perkins NR, Rehder E, Kuech TF, Babcock SE. Effect of growth temperature on the microstructure of MOVPE AlN/Si(111) Materials Research Society Symposium - Proceedings. 482: 185-190.  0.48
1997 Dunn KA, Babcock SE, Vaudo R, Phanse V, Redwing J. Dislocation distribution and subgrain structure of GaN films deposited on sapphire by HVPE and MOVPE Materials Research Society Symposium - Proceedings. 482: 417-422.  0.48
1997 Reeves JL, Polak M, Zhang W, Hellstrom EE, Babcock SE, Larbalestier DC, Inoue N, Okada M. Overpressure processing of Ag-sheathed Bi-2212 tapes Ieee Transactions On Applied Superconductivity. 7: 1541-1543.  0.48
1996 Heinig NF, Redwing RD, Tsu IF, Gurevich A, Nordman JE, Babcock SE, Larbalestier DC. Evidence for channel conduction in low misorientation angle [001] tilt YBa2Cu3O7-x bicrystal films Applied Physics Letters. 69: 577-579. DOI: 10.1063/1.117758  0.48
1996 Tsu IF, Babcock SE, Kaiser DL. Faceting, dislocation network structure, and various scales of heterogeneity in a YBa2Cu3O7-δ low-angle [001] tilt boundary Journal of Materials Research. 11: 1383-1397.  0.48
1996 Wang JL, Tsu IF, Cai XY, Kelley RJ, Vaudin MD, Babcock SE, Larbalestier DC. Electromagnetic and microstructural investigations of a naturally grown 8° [001] tilt bicrystal of Bi2Sr2CaCu2O8+x Journal of Materials Research. 11: 868-877.  0.48
1995 Babcock SE, Vargas JL. The nature of grain boundaries in the high-Tc superconductors Annual Review of Materials Science. 25: 193-222.  0.48
1995 Heinig NF, Redwing RD, Tsu IF, Gurevich A, Nordman JE, Babcock SE, Larbalestier DC. Evidence for channel conduction in low misorientation angle [001] tilt YBa2Cu3O7-x bicrystal films Applied Physics Letters. 577.  0.48
1994 Wang JL, Cai XY, Kelley RJ, Vaudin MD, Babcock SE, Larbalestier DC. Electromagnetic coupling character of [001] twist boundaries in sintered Bi2Sr2CaCu2O8+x bicrystals Physica C: Superconductivity and Its Applications. 230: 189-198. DOI: 10.1016/0921-4534(94)90463-4  0.48
1994 Babcock SE, Cai XY, Larbalestier DC, Shin DH, Zhang N, Zhang H, Kaiser DL, Gao Y. A TEM-EELS study of hole concentrations near strongly and weakly coupled grain boundaries in electromagnetically characterized YBa2Cu3O7-δ bicrystals Physica C: Superconductivity and Its Applications. 227: 183-196. DOI: 10.1016/0921-4534(94)90372-7  0.48
1994 Babcock SE, Larbalestier DC. Bicrystal studies of high transition temperature superconductors Journal of Physics and Chemistry of Solids. 55: 1125-1136. DOI: 10.1016/0022-3697(94)90130-9  0.48
1993 Field MB, Cai XY, Babcock SE, Larbalestier DC. Transport Properties Across High-Angle Bicrystals of Melt-Textured YBa2Cu306+x Ieee Transactions On Applied Superconductivity. 3: 1479-1482. DOI: 10.1109/77.233615  0.48
1993 Feng Y, Larbalestier DC, Babcock SE, VanderSande JB. Phase composition and local grain alignment at the Ag/superconductor interface in Ag-sheathed Bi-Sr-Ca-Cu-O tapes Proceedings - Annual Meeting, Microscopy Society of America. 1140-1141.  0.48
1992 Babcock SE. High-Temperature Superconductors from the Grain Boundary Perspective Mrs Bulletin. 17: 20-26. DOI: 10.1557/S0883769400041816  0.48
1992 Feng Y, Larbalestier DC, Babcock SE, Vander Sande JB. (001) faceting and Bi2Sr2CuO6+x(T c=7-22 K) phase formation at the Ag/Bi-Sr-Ca-Cu-O interface in Ag-clad Bi2Sr2CaCu2O8+x(T c=75-95 K) superconducting tapes Applied Physics Letters. 61: 1234-1236. DOI: 10.1063/1.107605  0.48
1992 Feng Y, Hautanen KE, High YE, Larbalestier DC, Ray R, Hellstrom EE, Babcock SE. Microstructural analysis of high critical current density Ag-clad BiSrCaCuO (2:2:1:2) tapes Physica C: Superconductivity and Its Applications. 192: 293-305. DOI: 10.1016/0921-4534(92)90834-Y  0.48
1991 Larbalestier DC, Babcock SE, Cai XY, Field MB, Gao Y, Heinig NF, Kaiser DL, Merkle K, Williams LK, Zhang N. Electrical transport across grain boundaries in bicrystals of YBa2Cu3O7δ Physica C: Superconductivity and Its Applications. 185: 315-320. DOI: 10.1016/0921-4534(91)91992-D  0.48
1990 Babcock SE, Larbalestier DC. Observations and implications of grain boundary dislocation networks in high-angle YBa2Cu3O7−δ grain boundaries Journal of Materials Research. 5: 919-928. DOI: 10.1557/JMR.1990.0919  0.48
1990 Babcock SE, Cai XY, Kaiser DL, Larbalestier DC. Weak-link-free behaviour of high-angle YBa2Cu3O7-δ grain boundaries in high magnetic fields Nature. 347: 167-169.  0.48
1989 Babcock SE, Larbalestier DC. Evidence for local composition variations within YBa2Cu 3O7-δ grain boundaries Applied Physics Letters. 55: 393-395. DOI: 10.1063/1.102422  0.48
1989 Babcock SE, Balluffi RW. Grain boundary kinetics-II. In situ observations of the role of grain boundary dislocations in high-angle boundary migration Acta Metallurgica. 37: 2367-2376. DOI: 10.1016/0001-6160(89)90034-5  0.48
1989 Babcock SE, Balluffi RW. Grain boundary kinetics-I. In situ observations of coupled grain boundary dislocation motion, crystal translation and boundary displacement Acta Metallurgica. 37: 2357-2365. DOI: 10.1016/0001-6160(89)90033-3  0.48
1988 Larbalestier DC, Babcock SE, Cai X, Daeumling M, Hampshire DP, Kelly TF, Lavanier LA, Lee PJ, Seuntjens J. Weak links and the poor transport critical currents of the 123 compounds Physica C: Superconductivity and Its Applications. 153: 1580-1585. DOI: 10.1016/0921-4534(88)90426-1  0.48
1988 Babcock SE, Kelly TF, Lee PJ, Seuntjens JM, Lavanier LA, Larbalestier DC. Investigation of composition variations near grain boundaries in high-quality sintered samples of YBa2Cu3O7-δ Physica C: Superconductivity and Its Applications. 152: 25-38. DOI: 10.1016/0921-4534(88)90070-6  0.48
1987 Babcock SE, Balluffi RW. Secondary grain boundary dislocation structures in gold and silver ⟨001⟩ twist boundaries revisited Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 55: 643-653. DOI: 10.1080/01418618708214374  0.48
1987 Mader W, Necker G, Babcock SE, Balluffi RW. Lattice imaging study of grain boundaries at normal incidence to the boundary plane Scripta Metallurgica. 21: 555-559. DOI: 10.1016/0036-9748(87)90200-6  0.48
1986 Babcock SE, Tu KN. Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration Journal of Applied Physics. 59: 1599-1605. DOI: 10.1063/1.336470  0.48
1982 Babcock SE, Tu KN. Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation Journal of Applied Physics. 53: 6898-6905. DOI: 10.1063/1.330031  0.48
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