| Year |
Citation |
Score |
| 2017 |
Delahoy AE, Peng S, Patra P, Manda S, Saraf A, Chen Y, Tan X, Chin KK. Cadmium Tin Oxide and Zinc Magnesium Oxide Prepared by Hollow Cathode Sputtering for CdTe Photovoltaics Mrs Advances. 2: 3203-3214. DOI: 10.1557/Adv.2017.407 |
0.325 |
|
| 2017 |
Chen Y, Tan X, Peng S, Xin C, Delahoy AE, Chin KK, Zhang C. The Influence of Conduction Band Offset on CdTe Solar Cells Journal of Electronic Materials. 47: 1201-1207. DOI: 10.1007/S11664-017-5850-9 |
0.332 |
|
| 2016 |
Ding YM, Cheng Z, Tan X, Misra D, Delahoy AE, Chin KK. Detection of electron emission as DLTS signal in CdTe solar cells Journal of Applied Physics. 120. DOI: 10.1063/1.4964438 |
0.308 |
|
| 2014 |
Kharangarh PR, Georgiou GE, Chin KK. Impact of copper back contact in CdTe solar cells: study of defects by temperature-dependent capacitance–voltage measurements Emerging Materials Research. 3: 106-111. DOI: 10.1680/Emr.13.00030 |
0.321 |
|
| 2014 |
Cheng Z, Delahoy AE, Su Z, Chin KK. Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cells Thin Solid Films. 558: 391-399. DOI: 10.1016/J.Tsf.2014.02.070 |
0.303 |
|
| 2013 |
Kharangarh PR, Georgiou GE, Chin KK. Temperature dependence of electrical characterization in n +-CdS/p-CdTe thin film solar cells-study of shallow/deep defects Materials Research Society Symposium Proceedings. 1493: 161-167. DOI: 10.1557/Opl.2013.29 |
0.344 |
|
| 2013 |
Wang Z, Cheng Z, Delahoy AE, Chin KK. A study of light-sensitive ideality factor and voltage-dependent carrier collection of CdTe Solar cells in forward bias Ieee Journal of Photovoltaics. 3: 843-851. DOI: 10.1109/Jphotov.2013.2247095 |
0.308 |
|
| 2013 |
Kharangarh PR, Misra D, Georgiou GE, Chin KK. Characterization of space charge layer deep defects in n +-CdS/p-CdTe solar cells by temperature dependent capacitance spectroscopy Journal of Applied Physics. 113. DOI: 10.1063/1.4800830 |
0.328 |
|
| 2012 |
Chin KK. Dual roles of doping and trapping of semiconductor defect levels and their ramification to thin film photovoltaics Journal of Applied Physics. 111. DOI: 10.1063/1.4719046 |
0.305 |
|
| 2011 |
Ma J, Wei SH, Gessert TA, Chin KK. Carrier density and compensation in semiconductors with multiple dopants and multiple transition energy levels: Case of Cu impurities in CdTe Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.245207 |
0.307 |
|
| 2010 |
Chin KK. P-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells Solar Energy Materials and Solar Cells. 94: 1627-1629. DOI: 10.1016/J.Solmat.2010.05.006 |
0.304 |
|
| 2003 |
Ou H, Chin KK. Theory of gated multicycle integration (GMCI) for repetitive imaging of focal plane array Ieee Transactions On Circuits and Systems Ii: Analog and Digital Signal Processing. 50: 378-383. DOI: 10.1109/TCSII.2003.813586 |
0.448 |
|
| 2002 |
Chin KK, Ou H. Lock-in imaging of multicycle integration focal plane array Review of Scientific Instruments. 73: 11. DOI: 10.1063/1.1426232 |
0.494 |
|
| 2001 |
Ou H, Chin KK. Gated multi-cycle integrator (GMCI): A readout circuit for repetitive imaging of FPA Proceedings of Spie - the International Society For Optical Engineering. 4369: 592-599. DOI: 10.1117/12.445320 |
0.445 |
|
| 1997 |
Opyrchal H, Chin KK, Kohn E, Ebert W. The optical characterization of boron-doped MPCVD diamond films Diamond and Related Materials. 6: 940-943. DOI: 10.1016/S0925-9635(96)00766-2 |
0.311 |
|
| 1987 |
Doniach S, Chin KK, Lindau I, Spicer WE. Microscopic metal clusters and Schottky barrier formation. Physical Review Letters. 58: 591-594. PMID 10034980 DOI: 10.1103/Physrevlett.58.591 |
0.461 |
|
| 1987 |
Chin KK, Cao R, Kendelewicz T, Miyano K, Yeh J, Lindau I, Spicer WE. Physical nature of the InP near-surface defect acceptor and donor states. Physical Review. B, Condensed Matter. 36: 5914-5919. PMID 9942269 DOI: 10.1103/Physrevb.36.5914 |
0.526 |
|
| 1987 |
Chin KK, Miyano K, Cao R, Kendelewicz T, Yeh J, Lindau I, Spicer WE. Summary Abstract: Chemical reaction at the In on GaAs (110) interface: A synchrotron radiation photoemission study Journal of Vacuum Science & Technology B. 5: 1080-1082. DOI: 10.1116/1.583732 |
0.437 |
|
| 1987 |
Doniach S, Chin KK, Lindau I, Spicer WE. Erratum: Microscopic metal clusters and schottky-barrier formation Physical Review Letters. 58: 2153. DOI: 10.1103/Physrevlett.58.2153 |
0.459 |
|
| 1987 |
Cao R, Miyano K, Kendelewicz T, Chin KK, Lindau I, Spicer WE. Kinetics study of initial stage band bending at metal GaAs(110) interfaces Journal of Vacuum Science & Technology B. 5: 998-1002. DOI: 10.1007/978-94-009-0657-0_31 |
0.526 |
|
| 1986 |
Chin KK, Cao R, Kendelewicz T, Miyano K, Yeh JJ, Doniach S, Lindau I, Spicer WE. Photoemission Study of the Physical Nature of the InP Near-Surface Defect States Mrs Proceedings. 77. DOI: 10.1557/Proc-77-429 |
0.514 |
|
| 1986 |
Chin KK, Cao R, Kendelewicz T, Miyano K, Williams MD, Doniach S, Lindau I, Spicer WE. Transition from Schottky Limit to Bardeen Limit in the Schottky Barrier Formation of al on n- and p-GaAs(110) Interfaces Mrs Proceedings. 77. DOI: 10.1557/Proc-77-297 |
0.386 |
|
| 1986 |
Chin KK. Chemical reaction at the In on GaAs(110) interface Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4: 955. DOI: 10.1116/1.583497 |
0.327 |
|
| 1986 |
Chin KK, Kendelewicz T, McCants C, Cao R, Miyano K, Lindau I, Spicer WE. Kinetic study of Schottky barrier formation of In on GaAs(110) surface Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 969-972. DOI: 10.1116/1.573767 |
0.528 |
|
| 1986 |
Kendelewicz T, Williams MD, Chin KK, McCants CE, List RS, Lindau I, Spicer WE. Temperature-dependent pinning at the Al/n-GaAs(110) interface Applied Physics Letters. 48: 919-921. DOI: 10.1063/1.96658 |
0.499 |
|
| 1986 |
Spicer WE, Kendelewicz T, Newman N, Chin KK, Lindau I. The mechanisms of Schottky barrier pinning in III-V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments Surface Science. 168: 240-259. DOI: 10.1016/0039-6028(86)90855-1 |
0.499 |
|
| 1985 |
Chin KK, Pan SH, Mo D, Mahowald P, Newman N, Lindau I, Spicer WE. Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110). Physical Review. B, Condensed Matter. 32: 918-923. PMID 9937100 DOI: 10.1103/Physrevb.32.918 |
0.466 |
|
| 1985 |
Chin KK, Lindau I. Possibility of incongruous interface behavior of In on GaAs(110). Physical Review. B, Condensed Matter. 32: 6902-6903. PMID 9936804 DOI: 10.1103/Physrevb.32.6902 |
0.485 |
|
| 1985 |
Chin KK, Cao R, Miyano K, McCants CE, Lindau I, Spicer WE. An Investigation Of The Cause Of Initial Band Bending Of A Cleaved Clean n-GaAs(llO) Surface Mrs Proceedings. 54. DOI: 10.1557/Proc-54-341 |
0.531 |
|
| 1985 |
Newman N, Chin KK, Petro WG, Kendelewicz T, Williams MD, McCants CE, Spicer WE. Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 996-1001. DOI: 10.1116/1.573374 |
0.377 |
|
| Show low-probability matches. |
