| Year |
Citation |
Score |
| 2009 |
Ichikawa K, Fujii M, Uraoka Y, Punchaipetch P, Yano H, Hatayama T, Fuyuki T, Yamashita I. Nonvolatile thin film transistor memory with Ferritin Journal of the Korean Physical Society. 54: 554-557. DOI: 10.3938/Jkps.54.554 |
0.409 |
|
| 2007 |
Ichikawa K, Uraoka Y, Punchaipetch P, Yano H, Hatayama T, Fuyuki T, Yamashita I. Low-temperature polycrystalline silicon thin film transistor flash memory with ferritin Japanese Journal of Applied Physics, Part 2: Letters. 46. DOI: 10.1143/Jjap.46.L804 |
0.412 |
|
| 2006 |
Punchaipetch P, Miyashita M, Uraoka Y, Fuyuki T, Sameshima T, Horii S. Improving high-κ gate dielectric properties by high-pressure water vapor annealing Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L120 |
0.411 |
|
| 2006 |
Punchaipetch P, Ichikawa K, Uraoka Y, Fuyuki T, Takahashi E, Hayashi T, Ogata K. Effect of SiO2 Tunnel oxide thickness on electron tunneling mechanism in Si nanocrystal dots floating-gate memories Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 3997-3999. DOI: 10.1143/Jjap.45.3997 |
0.386 |
|
| 2006 |
Punchaipetch P, Ichikawa K, Uraoka Y, Fuyuki T, Tomyo A, Takahashi E, Hayashi T. Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1271-1277. DOI: 10.1116/1.2198852 |
0.389 |
|
| 2006 |
Punchaipetch P, Uraoka Y, Fuyuki T, Tomyo A, Takahashi E, Hayashi T, Sano A, Horii S. Enhancing memory efficiency of Si nanocrystal floating gate memories with high-κ gate oxides Applied Physics Letters. 89. DOI: 10.1063/1.2339562 |
0.367 |
|
| 2006 |
Ichikawa K, Punchaipetch P, Yano H, Hatayama T, Uraoka Y, Fuyuki T, Tomyo A, Takahashi E, Hayashi T, Ogata K. New fabrication technique using side-wall-type plasma-enhanced chemical-vapor deposition for a floating gate memory with a Si nanodot Journal of the Korean Physical Society. 49: 569-576. |
0.307 |
|
| 2005 |
Ichikawa K, Punchaipetch P, Yano H, Hatayama T, Uraoka Y, Fuyuki T, Takahashi E, Hayashi T, Ogata K. Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition Japanese Journal of Applied Physics, Part 2: Letters. 44. DOI: 10.1143/Jjap.44.L836 |
0.395 |
|
| 2005 |
Driemeier C, Bastos KP, Soares GV, Miotti L, Pezzi RP, Baumvol IJR, Punchaipetch P, Pant G, Gnade BE, Wallace RM. Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics Applied Physics a: Materials Science and Processing. 80: 1045-1047. DOI: 10.1007/S00339-004-3037-8 |
0.359 |
|
| 2004 |
Punchaipetch P, Okamoto T, Nakamura H, Uraoka Y, Fuyuki T, Horii S. Effect of nitrogen on electrical and physical properties of polyatomic layer chemical vapor deposition HfSixQy gate dielectrics Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43: 7815-7820. DOI: 10.1143/Jjap.43.7815 |
0.407 |
|
| 2004 |
Punchaipetch P, Pant G, Kim MJ, Wallace RM, Gnade BE. Growth and characterization of hafnlum silicate films prepared by UV/ozone oxidation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 395-400. DOI: 10.1116/1.1649346 |
0.437 |
|
| 2004 |
Punchaipetch P, Pant G, Quevedo-Lopez MA, Yao C, El-Bouanani M, Kim MJ, Wallace RM, Gnade BE. Low-temperature deposition of hafnium silicate gate dielectrics Ieee Journal On Selected Topics in Quantum Electronics. 10: 89-100. DOI: 10.1109/Jstqe.2004.824109 |
0.439 |
|
| 2004 |
Nakamura H, Punchaipetch P, Yano H, Hatayama T, Uraoka Y, Fuyuki T, Horii S. Low temperature nitridation of PLCVD HfSixOy gate dielectrics using nitrogen radicals Imfedk 2004 - International Meeting For Future of Electron Devices, Kansai. 83-84. DOI: 10.1109/IMFEDK.2004.1566419 |
0.335 |
|
| 2004 |
Pezzi RP, Miotti L, Bastos KP, Soares GV, Driemeier C, Baumvol IJR, Punchaipetch P, Pant G, Gnade BE, Wallace RM, Rotondaro A, Visokay JM, Chambers JJ, Colombo L. Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon Applied Physics Letters. 85: 3540-3542. DOI: 10.1063/1.1801682 |
0.345 |
|
| 2004 |
Pant G, Punchaipetch P, Kim MJ, Wallace RM, Gnade BE. Low temperature UV/ozone oxidation formation of HfSiON gate dielectric Thin Solid Films. 460: 242-246. DOI: 10.1016/J.Tsf.2004.01.109 |
0.432 |
|
| 2004 |
Wu J, Punchaipetch P, Wallace RM, Coffer JL. Fabrication and optical properties of erbium-doped germanium nanowires Advanced Materials. 16. DOI: 10.1002/Adma.200400162 |
0.304 |
|
| 2003 |
Wang AQ, Punchaipetch P, Wallace RM, Golden TD. X-ray photoelectron spectroscopy study of electrodeposited nanostructured CeO2 films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1169-1175. DOI: 10.1116/1.1577569 |
0.373 |
|
| 2003 |
Punchaipetch P, Pant G, Quevedo-Lopez M, Zhang H, El-Bouanani M, Kim MJ, Wallace RM, Gnade BE. Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide Thin Solid Films. 425: 68-71. DOI: 10.1016/S0040-6090(02)01306-8 |
0.426 |
|
| 2002 |
Punchaipetch P, D'Souza NA, Brostow W, Smith JT. Mechanical properties of glass fiber composites with an epoxy resin modified by a liquid crystalline epoxy Polymer Composites. 23: 564-573. DOI: 10.1002/Pc.10457 |
0.465 |
|
| 2002 |
Gnade BE, Pant G, Punchaipetch P, Wallace RM. Low temperature deposition of Hafnium silicate gate dielectrics for TFTs on plastic substrates Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 305-306. |
0.344 |
|
| 2001 |
Punchaipetch P, Ambrogi V, Giamberini M, Brostow W, Carfagna C, D'Souza NA. Epoxy + liquid crystalline epoxy coreacted networks: II. Mechanical properties Polymer. 43: 839-848. DOI: 10.1016/S0032-3861(01)00639-5 |
0.469 |
|
| 2001 |
Punchaipetch P, Ambrogi V, Giamberini M, Brostow W, Carfagna C, D'Souza NA. Epoxy + liquid crystalline epoxy coreacted networks: I. Synthesis and curing kinetics Polymer. 42: 2067-2075. DOI: 10.1016/S0032-3861(00)00505-X |
0.323 |
|
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