Charles Surya - Publications

Affiliations: 
Hong Kong Polytechnic University (Hong Kong) 
Area:
Materials Science Engineering

183 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Ng A, Ren Z, Hu H, Fong PWK, Shen Q, Cheung SH, Qin P, Lee JW, Djurišić AB, So SK, Li G, Yang Y, Surya C. A Cryogenic Process for Antisolvent-Free High-Performance Perovskite Solar Cells. Advanced Materials (Deerfield Beach, Fla.). e1804402. PMID 30277609 DOI: 10.1002/adma.201804402  0.4
2017 Shen Q, Ng A, Ren Z, Gokkaya HC, Djurisic AB, Zapien JA, Surya C. Characterization of Low-frequency Excess Noise in CH3NH3PbI3-based Solar Cells Grown by Solution and Hybrid Chemical Vapor Deposition Techniques. Acs Applied Materials & Interfaces. PMID 29094597 DOI: 10.1021/acsami.7b10091  0.36
2016 Ng A, Ren Z, Shen Q, Cheung SH, Gokkaya HC, So SK, Djurišić AB, Wan Y, Wu X, Surya C. Crystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells. Acs Applied Materials & Interfaces. 8: 32805-32814. PMID 27934172 DOI: 10.1021/acsami.6b07513  0.4
2016 Dong Q, Liu F, Wong MK, Tam HW, Djurišić AB, Ng A, Surya C, Chan WK, Ng AM. Encapsulation of Perovskite Solar Cells for High Humidity Conditions. Chemsuschem. PMID 27504719 DOI: 10.1002/cssc.201600868  0.68
2016 Zhou F, Ren Z, Zhao Y, Shen X, Wang A, Li YY, Surya C, Chai Y. Perovskite Photovoltachromic Supercapacitor with All Transparent Electrodes. Acs Nano. PMID 27159013 DOI: 10.1021/acsnano.6b01202  0.68
2016 Dong Q, Liu F, Wong MK, Djurišić AB, Ren Z, Shen Q, Ng A, Surya C, Chan WK. In2O3 based perovskite solar cells Proceedings of Spie - the International Society For Optical Engineering. 9749. DOI: 10.1117/12.2212130  0.68
2016 Ren Z, Ng A, Surya C, Djurisic AB, So SK. Effects of oxyten annealing on the performance of perovskite solar cells Ieee Region 10 Annual International Conference, Proceedings/Tencon. 2016. DOI: 10.1109/TENCON.2015.7372885  0.68
2016 Subash B, Krishnakumar B, Sobral AJFN, Surya C, John NAA, Senthilraja A, Swaminathan M, Shanthi M. Synthesis, characterization and daylight active photocatalyst with antiphotocorrosive property for detoxification of azo dyes Separation and Purification Technology. 164: 170-181. DOI: 10.1016/j.seppur.2016.03.029  0.68
2016 Djurišić AB, Liu F, Ng AMC, Dong Q, Wong MK, Ng A, Surya C. Stability issues of the next generation solar cells Physica Status Solidi - Rapid Research Letters. 10: 281-299. DOI: 10.1002/pssr.201600012  0.68
2016 Dong Q, Liu F, Wong MK, Tam HW, Djurišić AB, Ng A, Surya C, Chan WK, Ng AMC. Cover Picture: Encapsulation of Perovskite Solar Cells for High Humidity Conditions (ChemSusChem 18/2016) Chemsuschem. 9: 2516. DOI: 10.1002/cssc.201601091  0.68
2016 Liu F, Dong Q, Wong MK, Djurišić AB, Ng A, Ren Z, Shen Q, Surya C, Chan WK, Wang J, Ng AMC, Liao C, Li H, Shih K, Wei C, et al. Is Excess PbI2 Beneficial for Perovskite Solar Cell Performance? Advanced Energy Materials. DOI: 10.1002/aenm.201502206  0.68
2016 Lin S, Liu S, Yang Z, Li Y, Ng TW, Xu Z, Bao Q, Hao J, Lee CS, Surya C, Yan F, Lau SP. Solution-Processable Ultrathin Black Phosphorus as an Effective Electron Transport Layer in Organic Photovoltaics Advanced Functional Materials. 26: 864-871. DOI: 10.1002/adfm.201503273  0.68
2015 To CH, Ng A, Dong Q, Djuriši? AB, Zapien JA, Chan WK, Surya C. Effect of PTB7 Properties on the Performance of PTB7:PC71BM Solar Cells. Acs Applied Materials & Interfaces. 7: 13198-207. PMID 26039900 DOI: 10.1021/am5085034  0.68
2015 Qian S, Ng A, Ren Z, Surya C. Characterization of low-frequency excess noise in perovskite-based photovoltaic cells 2015 International Conference On Noise and Fluctuations, Icnf 2015. DOI: 10.1109/ICNF.2015.7288579  0.68
2015 Liu X, Liu F, Dong Q, Wong MK, Djurišić AB, Ren Z, Shen Q, Ng A, Surya C, Chan WK. Metal-oxide based solar cells Proceedings of the 2015 Ieee International Conference On Electron Devices and Solid-State Circuits, Edssc 2015. 317-320. DOI: 10.1109/EDSSC.2015.7285114  0.68
2015 Liu X, Sun Q, Ng AMC, Djurišić AB, Xie M, Dai B, Tang J, Surya C, Liao C, Shih K. An alumina stabilized graphene oxide wrapped SnO2 hollow sphere LIB anode with improved lithium storage Rsc Advances. 5: 100783-100789. DOI: 10.1039/c5ra22482a  0.68
2015 Liu S, You P, Li J, Lee CS, Ong BS, Surya C, Yan F. Enhanced efficiency of polymer solar cells by adding a high-mobility conjugated polymer Energy and Environmental Science. 8: 1463-1470. DOI: 10.1039/c5ee00090d  0.68
2015 Guo MY, Liu F, Tsui J, Voskanyan AA, Ng AMC, Djurišić AB, Chan WK, Chan KY, Liao C, Shih K, Surya C. Hydrothermally synthesized CuxO as a catalyst for CO oxidation Journal of Materials Chemistry A. 3: 3627-3632. DOI: 10.1039/c4ta06804a  0.68
2015 Ng A, Ren Z, Shen Q, Cheung SH, Gokkaya HC, Bai G, Wang J, Yang L, So SK, Djuriši? AB, Leung WWF, Hao J, Chan WK, Surya C. Efficiency enhancement by defect engineering in perovskite photovoltaic cells prepared using evaporated PbI2/CH3NH3I multilayers Journal of Materials Chemistry A. 3: 9223-9231. DOI: 10.1039/c4ta05070c  0.68
2015 Jim WY, Liu X, Yiu WK, Leung YH, Djurišić AB, Chan WK, Liao C, Shih K, Surya C. The effect of different dopants on the performance of SnO2-based dye-sensitized solar cells Physica Status Solidi (B) Basic Research. 252: 553-557. DOI: 10.1002/pssb.201451256  0.68
2014 Ng A, Yiu WK, Foo Y, Shen Q, Bejaoui A, Zhao Y, Gokkaya HC, Djuriši? AB, Zapien JA, Chan WK, Surya C. Enhanced performance of PTB7:PC₇₁BM solar cells via different morphologies of gold nanoparticles. Acs Applied Materials & Interfaces. 6: 20676-84. PMID 25408486 DOI: 10.1021/am504250w  0.68
2014 Ren Z, Ng A, Shen Q, Gokkaya HC, Wang J, Yang L, Yiu WK, Bai G, Djuriši? AB, Leung WW, Hao J, Chan WK, Surya C. Thermal assisted oxygen annealing for high efficiency planar CH₃NH₃PbI₃ perovskite solar cells. Scientific Reports. 4: 6752. PMID 25341527 DOI: 10.1038/srep06752  0.68
2014 Leung YH, Ng AMC, Djurišic AB, Chan WK, Fong PWK, Lui HF, Surya C. Plasma treatment of p -GaN /n -ZnO nanorod light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2042305  0.68
2014 Ng A, Surya C, Yiu WK, Djurisic A. Power conversion efficiency enhancement of polymer solar cells by incorporation of gold nanoparticles 2014 Ieee International Conference On Electron Devices and Solid-State Circuits, Edssc 2014. DOI: 10.1109/EDSSC.2014.7061100  0.68
2014 Liu F, Leung YH, Djurišić AB, Ng AMC, Chan WK, Ng KL, Wong KS, Liao C, Shih K, Surya C. Effect of plasma treatment on native defects and photocatalytic activities of zinc oxide tetrapods Journal of Physical Chemistry C. 118: 22760-22767. DOI: 10.1021/jp506468r  0.68
2014 Wang SF, Fong WK, Wang W, Surya C. Growth of highly textured SnS on mica using an SnSe buffer layer Thin Solid Films. 564: 206-212. DOI: 10.1016/j.tsf.2014.06.010  0.68
2014 Hu F, Chan KC, Yue TM, Surya C. Electrochemical synthesis of transparent nanocrystalline Cu2O films using a reverse potential waveform Thin Solid Films. 550: 17-21. DOI: 10.1016/j.tsf.2013.10.008  0.68
2013 Xiang P, Liu M, Yang Y, Chen W, He Z, Leung KK, Surya C, Han X, Wu Z, Liu Y, Zhang B. Improving the quality of GaN on Si(111) substrate with a medium-temperature/high-temperature bilayer AlN buffer Japanese Journal of Applied Physics. 52. DOI: 10.7567/JJAP.52.08JB18  0.68
2013 Wang SF, Fong WK, Wang W, Leung KK, Surya C. Growth of SnS van der waals epitaxies on layered substrates Materials Research Society Symposium Proceedings. 1493: 213-217. DOI: 10.1557/opl.2013.234  0.68
2013 Leung KK, Wang W, Hui YY, Wang SF, Fong WK, Lau SP, Lam CH, Surya C. MBE growth of van der Waals epitaxy using graphene buffer layer Isne 2013 - Ieee International Symposium On Next-Generation Electronics 2013. 11-13. DOI: 10.1109/ISNE.2013.6512273  0.68
2013 Wang SF, Fong WK, Surya C. Investigation of low-frequency noise in van der Waals epitaxies 2013 22nd International Conference On Noise and Fluctuations, Icnf 2013. DOI: 10.1109/ICNF.2013.6579007  0.68
2013 Leung KK, Wang W, Shu H, Hui YY, Wang S, Fong PWK, Ding F, Lau SP, Lam CH, Surya C. Theoretical and experimental investigations on the growth of SnS van der Waals epitaxies on graphene buffer layer Crystal Growth and Design. 13: 4755-4759. DOI: 10.1021/cg400916h  0.68
2013 Chen X, Ng AMC, Djurišić AB, Chan WK, Fong PWK, Lui HF, Surya C, Cheng CCW, Kwok WM. GaN/MgO/ZnO heterojunction light-emitting diodes Thin Solid Films. 527: 303-307. DOI: 10.1016/j.tsf.2012.12.027  0.68
2013 Xu CH, You YF, Wang JZ, Ge SF, Fong WK, Leung K, Surya C. Growth behavior of ZnO nanowires on Au-seeded SiO2-GaN co-substrate by vapor transport and deposition Superlattices and Microstructures. 61: 97-105. DOI: 10.1016/j.spmi.2013.06.015  0.68
2012 Zhao YQ, Leung KK, Surya C, Feng CK, Chen YF, Chen DM, Shen H, Zhang BJ. Cost effective fabrication of wafer scale nanoholes for solar cells application Materials Research Society Symposium Proceedings. 1323: 81-86. DOI: 10.1557/opl.2011.1389  0.68
2012 Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP, Surya C. High quality SnS van der Waals epitaxies on graphene buffer layer Proceedings of Spie - the International Society For Optical Engineering. 8470. DOI: 10.1117/12.930946  0.68
2012 Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP, Surya C. Application of a graphene buffer layer for the growth of high quality SnS films on GaAs(100) substrate Conference Record of the Ieee Photovoltaic Specialists Conference. 2614-2616. DOI: 10.1109/PVSC.2012.6318130  0.68
2012 Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP, Surya C. Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications Icsict 2012 - 2012 Ieee 11th International Conference On Solid-State and Integrated Circuit Technology, Proceedings. DOI: 10.1109/ICSICT.2012.6467666  0.68
2012 Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP, Surya C. Growth of epitaxial quality SnS thin films on graphene 2012 Ieee International Conference On Electron Devices and Solid State Circuit, Edssc 2012. DOI: 10.1109/EDSSC.2012.6482879  0.68
2012 Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP, Chen Z, Shi LJ, Cao CB, Surya C. Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer Journal of Applied Physics. 111. DOI: 10.1063/1.4709732  0.68
2012 Xu CH, Leung K, Hu J, Surya C. Synthetics of ZnO nanowires on GaN micro-pyramids by gold catalyst Materials Letters. 74: 100-103. DOI: 10.1016/j.matlet.2011.11.122  0.68
2012 Xu CH, Lui HF, Surya C. Optical and sensor properties of ZnO nanostructure grown by thermal oxidation in dry or wet nitrogen Journal of Electroceramics. 28: 27-33. DOI: 10.1007/s10832-011-9674-3  0.68
2012 Sham CW, Tan SC, Lam KM, Surya C. Raising the interest of students in engineering with an integrated summer programme International Journal of Engineering Education. 28: 515-522.  0.68
2011 Xu CH, Leung K, Surya C. Synthetics of ZnO nanowires on GaN/Sapphire substrate by gold catalyst Advanced Materials Research. 339: 3-6. DOI: 10.4028/www.scientific.net/AMR.339.3  0.68
2011 Fong WK, Leung KK, Surya C. Characterization of InGaN/GaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique Materials Research Society Symposium Proceedings. 1288: 1-5. DOI: 10.1557/opl.2011.14  0.68
2011 Chen X, Ng AMC, Wong KK, Djurišić AB, Fang F, Chan WK, Fong PWK, Lui HF, Surya C. ZnO nanorods for light-emitting diode applications Proceedings of Spie - the International Society For Optical Engineering. 7940. DOI: 10.1117/12.878940  0.68
2011 Zhao YQ, Leung KK, Chen Y, Surya C, Feng CK, Chen YF, Chen DM, Shen H, Zhang BJ. Silicon nanohole photovoltaic cells Conference Record of the Ieee Photovoltaic Specialists Conference. 000699-000702. DOI: 10.1109/PVSC.2011.6186050  0.68
2011 Leung KK, Fong WK, Surya C. Low-frequency noise in GaN diodes Proceedings of the Ieee 21st International Conference On Noise and Fluctuations, Icnf 2011. 291-296. DOI: 10.1109/ICNF.2011.5994325  0.68
2011 Chen X, Man Ching Ng A, Fang F, Hang Ng Y, Djurišić AB, Lam Tam H, Wai Cheah K, Gwo S, Kin Chan W, Wai Keung Fong P, Fei Lui H, Surya C. ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias Journal of Applied Physics. 110. DOI: 10.1063/1.3653835  0.68
2011 Huang JA, Zhao YQ, Zhang XJ, Luo LB, Liu YK, Zapien JA, Surya C, Lee ST. Enhanced Raman scattering from vertical silicon nanowires array Applied Physics Letters. 98. DOI: 10.1063/1.3584871  0.68
2011 Chen XY, Fang F, Ng AMC, Djurišič AB, Cheah KW, Ling CC, Chan WK, Fong PWK, Lui HF, Surya C. Nitrogen doped-ZnO/n-GaN heterojunctions Journal of Applied Physics. 109. DOI: 10.1063/1.3575178  0.68
2011 Fong WK, Leung KK, Surya C. Growth and characterization of GaN/InGaN multiple quantum wells on nanoscale epitaxial lateral overgrown layers Crystal Growth and Design. 11: 2091-2097. DOI: 10.1021/cg101165k  0.68
2011 Chen XY, Fang F, Ng AMC, Djurišić AB, Chan WK, Lui HF, Fong PWK, Surya C, Cheah KW. Effect of doping precursors on the optical properties of Ce-doped ZnO nanorods Thin Solid Films. 520: 1125-1130. DOI: 10.1016/j.tsf.2011.08.022  0.68
2011 Zhang ZW, Zhu CF, Fong WK, Leung KK, Chan PKL, Surya C. Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers Solid-State Electronics. 62: 94-98. DOI: 10.1016/j.sse.2011.02.007  0.68
2011 Xu CH, Zhu ZB, Lui HF, Surya C, Shi SQ. The effect of oxygen partial pressure on the growth of ZnO nanostructure on Cu0.62Zn0.38 brass during thermal oxidation Superlattices and Microstructures. 49: 408-415. DOI: 10.1016/j.spmi.2010.12.009  0.68
2011 Xu CH, Lui HF, Surya C. Synthetics of ZnO nanostructures by thermal oxidation in water vapor containing environments Materials Letters. 65: 27-30. DOI: 10.1016/j.matlet.2010.09.052  0.68
2011 Fang F, Ng AMC, Chen XY, Djurišić AB, Zhong YC, Wong KS, Fong PWK, Lui HF, Surya C, Chan WK. Effect of Tm doping on the properties of electrodeposited ZnO nanorods Materials Chemistry and Physics. 125: 813-817. DOI: 10.1016/j.matchemphys.2010.09.051  0.68
2011 Fong WK, Leung KK, Surya C. Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique Journal of Crystal Growth. 318: 488-491. DOI: 10.1016/j.jcrysgro.2010.10.048  0.68
2010 Chen XY, Ng AMC, Fang F, Djurišić AB, Chan WK, Tam HL, Cheah KW, Fong PWK, Lui HF, Surya C. The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3282743  0.68
2010 Lui HF, Leung KK, Fong WK, Surya C. Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation Conference Record of the Ieee Photovoltaic Specialists Conference. 1977-1981. DOI: 10.1109/PVSC.2010.5616592  0.68
2010 Zhang Z, Liu W, Li J, Han Y, Jiang G, Surya C, Zhu C. Fabrication of integrated copper indium diselenide nanorod arrays on silicon using porous anodic alumina as template Inec 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 118-119. DOI: 10.1109/INEC.2010.5424567  0.68
2010 Kováč J, Jha SK, Jelenković EV, Kutsay O, Pejović M, Surya C, Zapien JA, Bello I, Srnánek R, Flickyngerová S. Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques Conference Proceedings - the 8th International Conference On Advanced Semiconductor Devices and Microsystems, Asdam 2010. 123-126. DOI: 10.1109/ASDAM.2010.5666315  0.68
2010 Leung KK, Fong WK, Chan PKL, Surya C. Physical mechanisms for hot-electron degradation in GaN light-emitting diodes Journal of Applied Physics. 107. DOI: 10.1063/1.3357312  0.68
2010 Hu F, Chan KC, Yue TM, Surya C. Dynamic template assisted electrodeposition of porous ZnO thin films using a triangular potential waveform Journal of Physical Chemistry C. 114: 5811-5816. DOI: 10.1021/jp910691w  0.68
2010 Chan CP, Lam H, Surya C. Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids Solar Energy Materials and Solar Cells. 94: 207-211. DOI: 10.1016/j.solmat.2009.09.003  0.68
2010 Ng AMC, Chen XY, Fang F, Hsu YF, Djurišić AB, Ling CC, Tam HL, Cheah KW, Fong PWK, Lui HF, Surya C, Chan WK. Solution-based growth of ZnO nanorods for light-emitting devices: Hydrothermal vs. electrodeposition Applied Physics B: Lasers and Optics. 100: 851-858. DOI: 10.1007/s00340-010-4173-9  0.68
2010 Leung KK, Fong WK, Chan PKL, Surya C. Degradation mechanism of GaN-based LEDs with different growth parameters Materials Research Society Symposium Proceedings. 1195: 207-212.  0.68
2009 Ng AM, Xi YY, Hsu YF, Djurisi? AB, Chan WK, Gwo S, Tam HL, Cheah KW, Fong PW, Lui HF, Surya C. GaN/ZnO nanorod light emitting diodes with different emission spectra. Nanotechnology. 20: 445201. PMID 19801783 DOI: 10.1088/0957-4484/20/44/445201  0.68
2009 Chan CP, Lam H, Leung KK, Surya C. Growth of copper zinc tin sulfide nano-rods by electrodeposition using anodized aluminum as the growth mask Journal of Nonlinear Optical Physics and Materials. 18: 599-603. DOI: 10.1142/S0218863509004804  0.68
2009 Chan CP, Chen Z, Lam H, Surya C. Growth and characterization of cu2znsns4 nanostructures using anodized aluminum as the growth mask Proceedings of Spie - the International Society For Optical Engineering. 7411. DOI: 10.1117/12.826802  0.68
2009 Lui HF, Fong WK, Surya C. Realization of erythemal UV detectors using Ni/GaN schottky junctions Ieee Transactions On Electron Devices. 56: 672-677. DOI: 10.1109/TED.2009.2014196  0.68
2009 Leung KK, Fong WK, Surya C. Characterizations of InGaN/GaN MQWs with different growth parameters 2009 14th Optoelectronics and Communications Conference, Oecc 2009. DOI: 10.1109/OECC.2009.5220553  0.68
2009 Chan CP, Lam H, Surya C. Cu2ZnSnS4 thin films prepared by ionic liquid electrodeposition 2009 14th Optoelectronics and Communications Conference, Oecc 2009. DOI: 10.1109/OECC.2009.5218264  0.68
2009 Lui HF, Fong WK, Surya C. Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors 2009 14th Optoelectronics and Communications Conference, Oecc 2009. DOI: 10.1109/OECC.2009.5218127  0.68
2009 Zhang W, Lam H, Li J, Wang M, Jiang S, Surya C, Zhu F. Growth of copper-indium nanorods on Si substrate using porous anodic alumina as template Journal of Physics: Conference Series. 188. DOI: 10.1088/1742-6596/188/1/012028  0.68
2009 Pang MY, Lui HF, Li WS, Wong KH, Surya C. Characterizations of bismuth telluride/gallium nitride heterojunction photovoltaic detector for MWIR detection under room temperature Journal of Physics: Conference Series. 152. DOI: 10.1088/1742-6596/152/1/012046  0.68
2009 Fong WK, Leung KK, Surya C. Low-frequency noise characterizations of GaN based LEDs with different growth parameters Aip Conference Proceedings. 1129: 633-636. DOI: 10.1063/1.3140554  0.68
2009 Jha S, Jelenković EV, Pejović MM, Ristić GS, Pejović M, Tong KY, Surya C, Bello I, Zhang WJ. Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays Microelectronic Engineering. 86: 37-40. DOI: 10.1016/j.mee.2008.09.001  0.68
2009 Chan CP, Lam H, Wong KY, Surya C. Electrodeposition of CU2ZnSnS4 thin films using ionic liquids Materials Research Society Symposium Proceedings. 1123: 105-109.  0.68
2009 Lam H, Zhang ZW, Chan CP, Chen Z, Surya C, Zhu CF, Wong KY. Growth of copper indium disulfide nano-rods using anodized aluminum nano mask Materials Research Society Symposium Proceedings. 1121: 77-81.  0.68
2009 Chen Z, Cao C, Li WS, Surya C. Well-aligned single-crystalline gan nanocolumns and their field emission properties Crystal Growth and Design. 9: 792-796.  0.68
2008 Li F, Wai PKA, Surya C. Spectrum flattening of white OLED with photonic crystal patterned capping layer 2008 Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference On Optical Fibre Technology, Oecc/Acoft 2008. DOI: 10.1109/OECCACOFT.2008.4610385  0.68
2008 Xu C, Yang X, Shi SQ, Liu Y, Surya C, Woo C. Effects of local gas-flow field on synthesis of oxide nanowires during thermal oxidation Applied Physics Letters. 92. DOI: 10.1063/1.2940597  0.68
2008 Jha SK, Surya C, Chen KJ, Lau KM, Jelencovic E. Low-frequency noise properties of double channel AlGaN/GaN HEMTs Solid-State Electronics. 52: 606-611. DOI: 10.1016/j.sse.2007.10.002  0.68
2008 Xu SS, Xu CH, Woo CH, Surya C. Characterization of phase transformation in shape memory alloys by atomic force microscope Superlattices and Microstructures. 44: 230-236. DOI: 10.1016/j.spmi.2008.05.005  0.68
2008 Xu CH, Shi SQ, Song GY, Woo CH, Surya C. Evaluation of the size of a tip-top by the measurement of desoxyribonucleic acid under atomic force microscopy Measurement: Journal of the International Measurement Confederation. 41: 783-787. DOI: 10.1016/j.measurement.2007.11.002  0.68
2008 Pang MY, Li WS, Wong KH, Surya C. Electrical and optical properties of bismuth telluride/gallium nitride heterojunction diodes Journal of Non-Crystalline Solids. 354: 4238-4241. DOI: 10.1016/j.jnoncrysol.2008.06.098  0.68
2008 Hsu YF, Xi YY, Tam KH, Djurišić AB, Luo J, Ling CC, Cheung CK, Ng AMC, Chan WK, Deng X, Beling CD, Fung S, Cheah KW, Fong PWK, Surya CC. Undoped p-type ZnO nanorods synthesized by a hydrothermal method Advanced Functional Materials. 18: 1020-1030. DOI: 10.1002/adfm.200701083  0.68
2007 Yu J, Jha SK, Xiao L, Liu Q, Wang P, Surya C, Yang M. AlGaN/GaN heterostructures for non-invasive cell electrophysiological measurements. Biosensors & Bioelectronics. 23: 513-9. PMID 17766103 DOI: 10.1016/j.bios.2007.06.014  0.68
2007 Fong WK, Leung KK, Lui HF, Wai PKA, Surya C, Chen Z, Cao CB. Measurement of flicker noise as a diagnostic tool for hot-electron degradation in GaN-based leds Fluctuation and Noise Letters. 7. DOI: 10.1142/S0219477507004045  0.68
2007 Jha SK, Zhu CF, Pilkuhn MH, Surya C, Schweizer H. Degradation of low-frequency noise in AlGaN/GaN HEMTS due to hot-electron stressing Fluctuation and Noise Letters. 7: L91-L100. DOI: 10.1142/S0219477507003726  0.68
2007 Lui HF, Fong WK, Surya C. Low-frequency noise characterizations of GaN-based visible-blind UV detectors fabricated using a double buffer layer structure Proceedings of Spie - the International Society For Optical Engineering. 6600. DOI: 10.1117/12.724978  0.68
2007 Lui HF, Fong WK, Surya C. Characteristics of MBE-Grown GaN detectors on double buffer layers under high-power ultraviolet optical irradiation Ieee Transactions On Electron Devices. 54: 671-676. DOI: 10.1109/TED.2007.892361  0.68
2007 Yang A, Tao X, Wang R, Lee S, Surya C. Room temperature gas sensing properties of Sn O2 /multiwall-carbon-nanotube composite nanofibers Applied Physics Letters. 91. DOI: 10.1063/1.2783479  0.68
2007 Chan CP, Pilkuhn M, Surya C. Application of low-frequency noise measurement as a characterization tool for laser-assisted debonding of GaN-based devices Aip Conference Proceedings. 922: 147-152. DOI: 10.1063/1.2759655  0.68
2007 Peng CX, Weng HM, Zhu CF, Ye BJ, Zhou XY, Han RD, Fong WK, Surya C. Influence of GaN polarity and intermediate-temperature buffer layers on strain relaxation and defects Physica B: Condensed Matter. 391: 6-11. DOI: 10.1016/j.physb.2006.05.431  0.68
2007 Leung KK, Chan CP, Fong WK, Pilkuhn M, Schweizer H, Surya C. High-resolution X-ray diffraction study of laser lift-off AlGaN/GaN HEMTs grown by MOCVD method Journal of Crystal Growth. 298: 840-842. DOI: 10.1016/j.jcrysgro.2006.10.112  0.68
2007 Fong WK, Leung KK, Surya C. Si doping of metal-organic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metal-organic source Journal of Crystal Growth. 298: 239-242. DOI: 10.1016/j.jcrysgro.2006.10.024  0.68
2007 Xu CH, Shi SQ, Surya C, Woo CH. Synthesis of antimony oxide nano-particles by vapor transport and condensation Journal of Materials Science. 42: 9855-9858. DOI: 10.1007/s10853-007-1799-z  0.68
2007 Chan CP, Leung KK, Pilkuhn M, Surya C, Yue TM, Pang G, Schweizer H. DC characterization of laser-debonded GaN HEMTs Physica Status Solidi (a) Applications and Materials Science. 204: 914-922. DOI: 10.1002/pssa.200622271  0.68
2006 Chan CP, Gao J, Yue TM, Surya C, Ng AMC, Djurišić AB, Liu PCK, Li M. Study of laser-debonded GaN LEDs Ieee Transactions On Electron Devices. 53: 2266-2271. DOI: 10.1109/TED.2006.881008  0.68
2006 Chan CP, Yue TM, Surya C, Ng AMC, Djurišić AB, Scholz F, Liu CK, Li M. Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes 2005 Ieee Conference On Electron Devices and Solid-State Circuits, Edssc. 479-482. DOI: 10.1109/EDSSC.2005.1635312  0.68
2006 Leung KK, Chan CP, Yue TM, Surya C. Electrical and structural studies of laser-debonded GaN light emitting diodes Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 98-100. DOI: 10.1109/COMMAD.2006.4429889  0.68
2006 Xu CH, Shi SQ, Man HC, Woo CH, Surya C. Oxidation behavior of the TiNi shape memory alloy with a laser surface melted layer Journal of Materials Science. 41: 1123-1129. DOI: 10.1007/s10853-005-3649-1  0.68
2006 Lui HF, Fong WK, Surya C, Cheung CH, Djurišić AB. Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2295-2298. DOI: 10.1002/pssc.200565358  0.68
2006 Chan CP, Yue TM, Surya C, Ng AMC, Djurišić AB, Liu CK, Li M. Study of laser-debonded GaN light emitting diodes Materials Research Society Symposium Proceedings. 892: 257-262.  0.68
2006 Jha SK, Surya C, Chen KJ, Lau KM. Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor Essderc 2006 - Proceedings of the 36th European Solid-State Device Research Conference. 2006: 105-108.  0.68
2005 Ng AMC, Tong WY, Djurišić AB, Leung YH, Cheung CH, Lui HF, Surya C, Chan WK. Synthesis of Tris(8-hydroxyquinoline) aluminum (Alq3) nanowires under different conditions Proceedings of Spie - the International Society For Optical Engineering. 5937: 1-8. DOI: 10.1117/12.614746  0.68
2005 Jha SK, Zhu CF, Jelenkovic E, Tong KY, Surya C, Schweizer H, Pilkuhn M. Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress Proceedings of Spie - the International Society For Optical Engineering. 5844: 256-267. DOI: 10.1117/12.609283  0.68
2005 Jha SK, Leung BH, Surya C, Schweizer H, Pilkhuhn MH. Studies of hot-electron degradation in GaN HEMTs with varying gate recess depths Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 33-36. DOI: 10.1109/COMMAD.2004.1577485  0.68
2005 Chang Y, Tong KY, Surya C. Numerical simulation of current-voltage characteristics of AlGaN/GaN HEMTs at high temperatures Semiconductor Science and Technology. 20: 188-192. DOI: 10.1088/0268-1242/20/2/016  0.68
2005 Jha S, Gao J, Zhu CF, Jelenkovic E, Tong KY, Pilkuhn M, Surya C, Schweizer H. Low-frequency noise characterization of hot-electron degradation in GaN-based HEMTs Aip Conference Proceedings. 780: 295-298. DOI: 10.1063/1.2036753  0.68
2005 Chan CP, Leung BH, Fong WK, Lai PK, Loke YH, Surya C, Yue TM, Man HC, Xiu X, Zhang R. Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films Applied Surface Science. 252: 1049-1056. DOI: 10.1016/j.apsusc.2005.01.146  0.68
2005 Jha SK, Leung BH, Surya CC, Schweizer H, Pilkhuhn MH. Low-frequency noise characterization in AlGaN/GaN HEMTs with varying gate recess depths Materials Research Society Symposium Proceedings. 831: 465-470.  0.68
2004 Chan CP, Leung BH, Loke YH, Man HC, Yue TM, Xiu X, Zhang R, Surya C. Characterizations of low-frequency noise in laser-debonded hvpe-grown GaN thin films Fluctuation and Noise Letters. 4: L437-L445. DOI: 10.1142/S0219477504002026  0.68
2004 Roy VAL, Djurišić AB, Liu H, Zhang XX, Leung YH, Xie MH, Gao J, Lui HF, Surya C. Magnetic properties of Mn doped ZnO tetrapod structures Applied Physics Letters. 84: 756-758. DOI: 10.1063/1.1645312  0.68
2004 Djurišić AB, Choy WCH, Roy VAL, Leung YH, Kwong CY, Cheah KW, Rao TKG, Chan WK, Lui HF, Surya C. Photoluminescence and electron paramagnetic resonance of ZnO tetrapod structures Advanced Functional Materials. 14: 856-864. DOI: 10.1002/adfm.200305082  0.68
2004 Tam HY, Wai PKA, Yue TM, Surya C. Photonics and optical communication research at the Hong Kong polytechnic university Hkie Transactions Hong Kong Institution of Engineers. 11: 68-78.  0.68
2003 Roy VAL, Djurišić AB, Li Q, Xu SJ, Lui HF, Surya C, Gao J. Simple technique for bulk quantity synthesis of ZnO tetrapod nanorods Proceedings of Spie - the International Society For Optical Engineering. 5219: 51-58. DOI: 10.1117/12.504700  0.68
2003 Chan CP, Lai PK, Leung BH, Yue TM, Surya C. Study of low-frequency noise in GaN-on-Si films obtained by laser-assisted debonding Proceedings of Spie - the International Society For Optical Engineering. 5113: 328-341. DOI: 10.1117/12.497674  0.68
2003 Chan CP, Leung BH, Loke YH, Man HC, Yue TM, Surya C. Low-frequency noise in laser-debonded GaN films 2003 Ieee Conference On Electron Devices and Solid-State Circuits, Edssc 2003. 83-86. DOI: 10.1109/EDSSC.2003.1283488  0.68
2003 Chan CP, Leung BH, Yue TM, Man HC, Surya C. Characterizations of laser-assisted debonded GaN films Proceedings of the 6th Chinese Optoelectronics Symposium, Coes 2003. 150-153. DOI: 10.1109/COS.2003.1278188  0.68
2003 Surya C, Tam HY, Wai PKA. Photonics research in the Hong Kong Polytechnic University Proceedings of the 6th Chinese Optoelectronics Symposium, Coes 2003. 32-35. DOI: 10.1109/COS.2003.1278158  0.68
2003 Roy VAL, Djurišić AB, Chan WK, Gao J, Lui HF, Surya C. Luminescent and structural properties of ZnO nanorods prepared under different conditions Applied Physics Letters. 83: 141-143. DOI: 10.1063/1.1589184  0.68
2003 Fong WK, Ng SW, Leung BH, Surya C. Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers Journal of Applied Physics. 94: 387-391. DOI: 10.1063/1.1579843  0.68
2003 Leung BH, Fong WK, Surya C. Study of low-frequency excess noise in GaN materials Optical Materials. 23: 203-206. DOI: 10.1016/S0925-3467(03)00084-3  0.68
2003 Ho HP, Lo KC, Siu GG, Surya C, Li KF, Cheah KW. Raman and photoluminescence spectroscopy of free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off Materials Chemistry and Physics. 81: 99-103. DOI: 10.1016/S0254-0584(03)00146-9  0.68
2003 Leung BH, Fong WK, Surya C. Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices Applied Surface Science. 212: 897-900. DOI: 10.1016/S0169-4332(03)00023-0  0.68
2003 Zhu CF, Xie JQ, Fong WK, Surya C. Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy Materials Letters. 57: 2413-2416. DOI: 10.1016/S0167-577X(02)01246-6  0.68
2003 Leung BH, Fong WK, Surya C, Lu LW, Ge WK. Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers Materials Science in Semiconductor Processing. 6: 523-525. DOI: 10.1016/j.mssp.2003.07.016  0.68
2003 Fong WK, Leung BH, Surya C, Lu LW, Ge WK. Low-frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate-temperature buffer layers Physica Status Solidi C: Conferences. 2396-2399. DOI: 10.1002/pssc.200303393  0.68
2002 Ho HP, Lo KC, Siu GG, Surya C. Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off Proceedings of the Ieee Hong Kong Electron Devices Meeting. 2002: 111-115. DOI: 10.1109/HKEDM.2002.1029169  0.68
2002 To T, Djurišić AB, Xie MH, Fong WK, Surya C. Doping of GaN by Mg diffusion Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2002: 75-78. DOI: 10.1109/COMMAD.2002.1237193  0.68
2002 Leung BH, Chan NH, Fong WK, Zhu CF, Ng SW, Lui HF, Tong KY, Surya C, Lu LW, Ge WK. Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers Ieee Transactions On Electron Devices. 49: 314-318. DOI: 10.1109/16.981223  0.68
2002 Leung BH, Fong WK, Zhu CF, Surya C. Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy Journal of Applied Physics. 91: 3706-3710. DOI: 10.1063/1.1436288  0.68
2002 Fong WK, Zhu CF, Leung BH, Surya C, Sundaravel B, Luo EZ, Xu JB, Wilson IH. Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy Microelectronics Reliability. 42: 1179-1184. DOI: 10.1016/S0026-2714(02)00086-0  0.68
2002 Lu LW, Fong WK, Zhu CF, Leung BH, Surya C, Wang J, Ge W. Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy Journal of Crystal Growth. 234: 99-104. DOI: 10.1016/S0022-0248(01)01664-5  0.68
2002 Chan MCY, Surya C, Wai PKA. Optical gain of interdiffused GaInNAs/GaAs quantum wells Applied Physics a: Materials Science and Processing. 75: 573-576. DOI: 10.1007/s003390101031  0.68
2002 Fong WK, Leung BH, Xie JQ, Surya C. Study of low-frequency excess noise transport in Ga-face and N-face GaN thin films grown on intermediate-temperature buffer layer by RF-MBE Physica Status Solidi (a) Applied Research. 192: 466-471. DOI: 10.1002/1521-396X(200208)192:2<466::AID-PSSA466>3.0.CO;2-2  0.68
2002 Fong WK, Leung BH, Zhu CF, Surya C. Characterization of G-R noise in GaN films grown by RF-MBE on intermediate-temperature buffer layers Materials Research Society Symposium - Proceedings. 693: 183-188.  0.68
2001 Leung BH, Fong WK, Zhu CF, Surya C. Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers Ieee Transactions On Electron Devices. 48: 2400-2404. DOI: 10.1109/16.954483  0.68
2001 Zhu CF, Fong WK, Leung BH, Cheng CC, Surya C. Effects of rapid thermal annealing on the structural properties of GaN thin films Ieee Transactions On Electron Devices. 48: 1225-1230. DOI: 10.1109/16.925252  0.68
2001 Chan MCY, Surya C, Wai PKA. The effects of interdiffusion on the subbands in GaxIn1-xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths Journal of Applied Physics. 90: 197-201. DOI: 10.1063/1.1370110  0.68
2001 Wang LS, Fong WK, Surya C, Cheah KW, Zheng WH, Wang ZG. Photoluminescence of rapid-thermal annealed Mg-doped GaN films Solid-State Electronics. 45: 1153-1157. DOI: 10.1016/S0038-1101(01)00043-0  0.68
2001 Ho WY, Surya C. Study of light-induced annealing effects in a-Si:H thin films Microelectronics and Reliability. 41: 913-917. DOI: 10.1016/S0026-2714(01)00012-9  0.68
2001 Fong WK, Zhu CF, Leung BH, Surya C. High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer Journal of Crystal Growth. 233: 431-438. DOI: 10.1016/S0022-0248(01)01592-5  0.68
2001 Zhu CF, Fong WK, Leung BH, Surya C. Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers Applied Physics a: Materials Science and Processing. 72: 495-497.  0.68
2001 Chan MCY, Surya C, Wai PKA. Interdiffusion of GaInNAs/GaAs quantum wells Proceedings of the Ieee Hong Kong Electron Devices Meeting. 17-20.  0.68
2001 Fong WK, Zhu CF, Leung BH, Surya C. Electrical properties of high quality MBE-grown GaN thin films on intermediate-temperature buffer layers Proceedings of the Ieee Hong Kong Electron Devices Meeting. 153-157.  0.68
2001 Zhu CF, Fong WK, Leung BH, Chan NH, Surya C. Characterization of GaN thin films on HVPE GaN templates Proceedings of the Ieee Hong Kong Electron Devices Meeting. 140-143.  0.68
2001 Leung BH, Chan NH, Fong WK, Zhu CF, Lui HF, Ng CK, Wong KC, Surya C. Effects of intermediate-temperature buffer layers on low-frequency noise performance of GaN based Schottky barriers Proceedings of the Ieee Hong Kong Electron Devices Meeting. 148-152.  0.68
2000 Zhao F, Choi IW, Hing P, Yuan S, Ong TK, Ooi BS, Jiang J, Chan MCY, Surya C, Li EH. Effects of Zn doping in the substrate on the quantum well intermixing in GaAs/Al0.24Ga0.76As single quantum well structures Proceedings of Spie - the International Society For Optical Engineering. 4227: 169-174. DOI: 10.1117/12.405387  0.68
2000 Ho WY, Surya C, Tong KY, Lu LW, Ge WK. Studies of high DC current induced degradation in III-V nitride based heterojunctions Ieee Transactions On Electron Devices. 47: 1421-1425. DOI: 10.1109/16.848286  0.68
2000 Fong WK, Zhu CF, Leung BH, Surya C. Growth of high quality GaN thin films by MBE on intermediate-temperature buffer layers Mrs Internet Journal of Nitride Semiconductor Research. 5.  0.68
2000 Zhu CF, Fong WK, Leung BH, Cheng CC, Surya C. Study of low-frequency excess noise in RTA annealed n-type gallium nitride Proceedings of the Ieee Hong Kong Electron Devices Meeting. 24-29.  0.68
2000 Zhu CF, Fong WK, Leung BH, Cheng CC, Surya C. Nature of low-frequency excess noise in n-type gallium nitride Materials Research Society Symposium - Proceedings. 622: T6231-T6236.  0.68
2000 Zhu CF, Fong WK, Leung BH, Cheng CC, Surya C, Sundaravel B, Luo EZ, Xu JB, Wilson IH. The effect of indium surfactant on the optoelectronic and structural properties of MBE grown gallium nitride Materials Research Society Symposium - Proceedings. 618: 153-158.  0.68
2000 Lueng CM, Chan HLW, Surya C, Choy CL. Piezoelectric coefficient of aluminum nitride and gallium nitride Journal of Applied Physics. 88: 5360-5363.  0.68
2000 Sundaravel B, Luo EZ, Xu JB, Wilson IH, Fong WK, Wang LS, Surya C. Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001) Journal of Applied Physics. 87: 955-957.  0.68
2000 Wang Q, Guo W, Chan MCY, Liu S, Li EH, Surya C. New multichamber evaporator for organic devices Proceedings of Spie - the International Society For Optical Engineering. 4078: 289-291.  0.68
2000 Fong WK, Zhu CF, Surya C, Leung BH, Cheng CC, Sundaravel B, Luo EZ, Xu JB, Wilson IH. Effects of indium surfactant on optical and structural properties of MBE grown GaN Proceedings of Spie - the International Society For Optical Engineering. 4078: 44-57.  0.68
1999 Lueng CM, Chan HLW, Surya C, Fong WK, Choy CL, Chow P, Rosamond M. Piezoelectric coefficient of GaN measured by laser interferometry Journal of Non-Crystalline Solids. 254: 123-127. DOI: 10.1016/S0022-3093(99)00383-X  0.68
1999 Lueng CM, Chan HLW, Fong WK, Surya C, Choy CL. Piezoelectric coefficients of aluminum nitride and gallium nitride Materials Research Society Symposium - Proceedings. 572: 389-394.  0.68
1999 Ho W, Surya C, Tong KY, Kim W, Botcharev A, Morkoc H. Study of 1/f noise in III-V nitride based MODFETs at low drain bias Proceedings of the Ieee Hong Kong Electron Devices Meeting. 130-133.  0.68
1999 Ho WY, Surya C, Tong KY, Kim W, Botcharev AE, Morkoç H. Characterization of flicker noise in ganbased modfet's at low drain bias Ieee Transactions On Electron Devices. 46: 10991104.  0.68
1999 Surya C, Zhu CF, Leung BH, Fong WK, Cheng CC, Sin JKO. Study of the effects of rapid thermal annealing in generation-recombination noise in MBE grown GaN thin films Microelectronics Reliability. 40: 1905-1909.  0.68
1999 Ho WY, Fong WK, Surya C, Tong KY, Kim W, Botcharev A, Morkoc H. Characterization of flicker noise in GaN based mODFETs at low drain bias Mrs Internet Journal of Nitride Semiconductor Research. 4.  0.68
1999 Ho WY, Fong WK, Surya C, Tong KY, Lu LAV, Ge WK. Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions Materials Research Society Symposium - Proceedings. 537.  0.68
1999 Fleischer S, Surya C, Hu YF, Beling CD, Fung S, Smith TL, Moulding KM, Missous M. A study of the vacancy-defect distribution in a GaAs/AlxGa1-xAs multi-layer structure grown at low temperature Journal of Crystal Growth. 196: 53-61.  0.68
1998 Surya C, Wang W, Lai PT. Characterization of flicker noise in N2O and NH3 nitrided MOSFETs due to low-energy Ar+ backsurface gettering Semiconductor Science and Technology. 13: 792-795. DOI: 10.1088/0268-1242/13/7/023  0.68
1997 Fleischer S, Surya C, Hu YF, Beling CD, Fung S, Missous M. Positron studies of arsenic precipitation in low-temperature GaAs grown by molecular beam epitaxy Proceedings of the Ieee Hong Kong Electron Devices Meeting. 123-127.  0.68
1997 Ho WY, Surya C. Study of 1/f noise in hydrogenated amorphous silicon thin films Solid-State Electronics. 41: 1247-1249.  0.68
1996 Surya C, Wang W, Fong WK, Chan CH, Lai PT. Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs Solid-State Electronics. 39: 1577-1580. DOI: 10.1016/0038-1101(96)00069-X  0.68
1995 Surya C, Israeloff NE, Widom A, Seed R, Vittoria C. Flicker noise in YBa2Cu3O7-δ bicrystal grain boundary junctions in weak magnetic fields Applied Physics Letters. 67: 1307. DOI: 10.1063/1.114522  0.68
1994 Surya C, Hallemeier P, Jiang S, Phillips JM. Thermal Fluctuations in Y-Ba-Cu-O Thin Films Near the Transition Temperature Ieee Transactions On Electron Devices. 41: 2123-2127. DOI: 10.1109/16.333831  0.68
1994 Surya C, Brown ER, Maki PA, Ng SH. Spectral and Random Telegraph Noise Characterizations of Low-Frequency Fluctuations in GaAs/Al0.4Ga0.6As Resonant Tunneling Diodes Ieee Transactions On Electron Devices. 41: 2016-2022. DOI: 10.1109/16.333819  0.68
1993 Surya C, Hsiang TY. Comment on “A 1 /fNoise Technique to Extract the Oxide Trap Density Near the Conduction Band Edge of Silicon” Ieee Transactions On Electron Devices. 40: 680-681. DOI: 10.1109/16.199344  0.68
1993 Ng SH, Surya C. Theory and experiments on flicker noise in In0.53Ga 0.47As/AlAs/InAs resonant tunneling diodes Journal of Applied Physics. 73: 7504-7508. DOI: 10.1063/1.353997  0.68
1993 Ng SH, Surya C, Brown ER, Maki PA. Observation of random-telegraph noise in resonant-tunneling diodes Applied Physics Letters. 62: 2262-2264. DOI: 10.1063/1.109435  0.68
1993 Cheng CH, Surya C. The effect of hot-electron injection on the properties of flicker noise in n-channel MOSFETs Solid State Electronics. 36: 475-479. DOI: 10.1016/0038-1101(93)90103-W  0.68
1992 Ng SH, Surya C. A model for low frequency excess noise in Si-JFETs at low bias Solid State Electronics. 35: 1803-1809. DOI: 10.1016/0038-1101(92)90264-D  0.68
1992 Ng SH, Surya C. Studies of flicker noise in In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes Solid State Electronics. 35: 1213-1216. DOI: 10.1016/0038-1101(92)90151-2  0.68
1988 Surya C, Hsiang TY. A thermal activation model for 1/f{hook}y noise in Si-MOSFETs Solid State Electronics. 31: 959-964. DOI: 10.1016/0038-1101(88)90051-2  0.68
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