| Year |
Citation |
Score |
| 2020 |
Wu Z, Tengstrand O, Bakhit B, Lu J, Greene JE, Hultman L, Petrov I, Greczynski G. Growth of dense, hard yet low-stress Ti0.40Al0.27W0.33N nanocomposite films with rotating substrate and no external substrate heating Journal of Vacuum Science and Technology. 38: 23006. DOI: 10.1116/1.5140357 |
0.484 |
|
| 2020 |
Nedfors N, Primetzhofer D, Zhirkov I, Palisaitis J, Persson POÅ, Greene JE, Petrov I, Rosen J. The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering Vacuum. 177: 109355. DOI: 10.1016/J.Vacuum.2020.109355 |
0.451 |
|
| 2020 |
Bakhit B, Palisaitis J, Persson POÅ, Alling B, Rosen J, Hultman L, Petrov I, Greene JE, Greczynski G. Self-organized columnar Zr0.7Ta0.3B1.5 core/shell-nanostructure thin films Surface & Coatings Technology. 401: 126237. DOI: 10.1016/J.Surfcoat.2020.126237 |
0.441 |
|
| 2020 |
Wu Z, Wang Q, Petrov I, Greene JE, Hultman L, Greczynski G. Cubic-structure Al-rich TiAlSiN thin films grown by hybrid high-power impulse magnetron co-sputtering with synchronized Al+ irradiation Surface & Coatings Technology. 385: 125364. DOI: 10.1016/J.Surfcoat.2020.125364 |
0.426 |
|
| 2020 |
Bakhit B, Palisaitis J, Thörnberg J, Rosen J, Persson POÅ, Hultman L, Petrov I, Greene JE, Greczynski G. Improving the high-temperature oxidation resistance of TiB2 thin films by alloying with Al Acta Materialia. 196: 677-689. DOI: 10.1016/J.Actamat.2020.07.025 |
0.398 |
|
| 2020 |
Mei AB, Kindlund H, Broitman E, Hultman L, Petrov I, Greene JE, Sangiovanni D. Adaptive hard and tough mechanical response in single-crystal B1 VNx ceramics via control of anion vacancies Acta Materialia. 192: 78-88. DOI: 10.1016/J.Actamat.2020.03.037 |
0.321 |
|
| 2019 |
Godoy YC, Tengstrand O, Florez JO, Petrov I, Bustos E, Hultman L, Herrera-Gomez A, Greene JE, Greczynski G. Corrosion Resistant TiTaN and TiTaAlN Thin Films Grown by Hybrid HiPIMS/DCMS Using Synchronized Pulsed Substrate Bias with No External Substrate Heating The Coatings. 9: 841. DOI: 10.3390/Coatings9120841 |
0.404 |
|
| 2019 |
Edström D, Sangiovanni D, Landälv L, Eklund P, Greene JE, Petrov I, Hultman L, Chirita V. Mechanical properties of VMoNO as a function of oxygen concentration: Toward development of hard and tough refractory oxynitrides Journal of Vacuum Science and Technology. 37: 61508. DOI: 10.1116/1.5125302 |
0.304 |
|
| 2019 |
Greczynski G, Petrov I, Greene JE, Hultman L. Paradigm shift in thin-film growth by magnetron sputtering: From gas-ion to metal-ion irradiation of the growing film Journal of Vacuum Science and Technology. 37: 60801. DOI: 10.1116/1.5121226 |
0.393 |
|
| 2019 |
Bakhit B, Engberg D, Lu J, Rosén J, Högberg H, Hultman L, Petrov I, Greene JE, Greczynski G. Strategy for simultaneously increasing both hardness and toughness in ZrB2-rich Zr1-xTaxBy thin films Journal of Vacuum Science and Technology. 37: 31506. DOI: 10.1116/1.5093170 |
0.48 |
|
| 2019 |
Huang B, Chu JP, Hsu C, Greene JE, Chen Y, Chang C. Improving the optical and crystal properties of ZnO nanotubes via a metallic glass quantum dot underlayer Journal of Materials Chemistry C. 7: 5163-5171. DOI: 10.1039/C9Tc00085B |
0.347 |
|
| 2019 |
Hellgren N, Thörnberg J, Zhirkov I, Sortica MA, Petrov I, Greene JE, Hultman L, Rosén J. High-power impulse magnetron sputter deposition of TiBx thin films: Effects of pressure and growth temperature Vacuum. 169: 108884. DOI: 10.1016/J.Vacuum.2019.108884 |
0.417 |
|
| 2019 |
Kindlund H, Sangiovanni D, Petrov I, Greene JE, Hultman L. A review of the intrinsic ductility and toughness of hard transition-metal nitride alloy thin films Thin Solid Films. 688: 137479. DOI: 10.1016/J.Tsf.2019.137479 |
0.397 |
|
| 2019 |
Edström D, Sangiovanni D, Hultman L, Petrov I, Greene JE, Chirita V. TiN film growth on misoriented TiN grains with simultaneous low-energy bombardment: Restructuring leading to epitaxy Thin Solid Films. 688: 137380. DOI: 10.1016/J.Tsf.2019.06.030 |
0.456 |
|
| 2019 |
Gervilla V, Almyras GA, Thunström F, Greene JE, Sarakinos K. Dynamics of 3D-island growth on weakly-interacting substrates Applied Surface Science. 488: 383-390. DOI: 10.1016/J.Apsusc.2019.05.208 |
0.396 |
|
| 2018 |
Mühlbacher M, Greczynski G, Sartory B, Schalk N, Lu J, Petrov I, Greene JE, Hultman L, Mitterer C. Enhanced TiTaN diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si(001) wafers and Cu overlayers. Scientific Reports. 8: 5360. PMID 29599468 DOI: 10.1038/S41598-018-23782-9 |
0.484 |
|
| 2018 |
Villamayor MMS, Keraudy J, Shimizu T, Viloan RPB, Boyd R, Lundin D, Greene JE, Petrov I, Helmersson U. Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias Journal of Vacuum Science and Technology. 36: 61511. DOI: 10.1116/1.5052702 |
0.486 |
|
| 2018 |
Kindlund H, Lu J, Broitman E, Petrov I, Greene JE, Birch J, Hultman L. Growth and mechanical properties of 111-oriented V0.5Mo0.5Nx/Al2O3(0001) thin films Journal of Vacuum Science and Technology. 36: 51512. DOI: 10.1116/1.5045048 |
0.406 |
|
| 2018 |
Bakhit B, Petrov I, Greene JE, Hultman L, Rosén J, Greczynski G. Controlling the B/Ti ratio of TiBx thin films grown by high-power impulse magnetron sputtering Journal of Vacuum Science and Technology. 36: 30604. DOI: 10.1116/1.5026445 |
0.466 |
|
| 2018 |
Greczynski G, Zhirkov I, Petrov I, Greene JE, Rosén J. Time evolution of ion fluxes incident at the substrate plane during reactive high-power impulse magnetron sputtering of groups IVb and VIb transition metals in Ar/N2 Journal of Vacuum Science and Technology. 36: 20602. DOI: 10.1116/1.5016241 |
0.406 |
|
| 2018 |
Sangiovanni D, Mei AB, Edström D, Hultman L, Chirita V, Petrov I, Greene JE. Effects of surface vibrations on interlayer mass transport: Ab initio molecular dynamics investigation of Ti adatom descent pathways and rates from TiN/TiN(001) islands Physical Review B. 97: 35406. DOI: 10.1103/Physrevb.97.035406 |
0.346 |
|
| 2018 |
Mozetič M, Vesel A, Primc G, Eisenmenger-Sittner C, Bauer J, Eder A, Schmid G, Ruzic D, Ahmed Z, Barker D, Douglass K, Eckel S, Fedchak J, Hendricks J, Klimov N, ... Greene J, et al. Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology Thin Solid Films. 660: 120-160. DOI: 10.1016/J.Tsf.2018.05.046 |
0.401 |
|
| 2017 |
Greene JE. Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017 Journal of Vacuum Science and Technology. 35. DOI: 10.1116/1.4998940 |
0.427 |
|
| 2017 |
Greczynski G, Zhirkov I, Petrov I, Greene JE, Rosén J. Gas rarefaction effects during high power pulsed magnetron sputtering of groups IVb and VIb transition metals in Ar Journal of Vacuum Science and Technology. 35: 60601. DOI: 10.1116/1.4989674 |
0.327 |
|
| 2017 |
Petrov I, Hall A, Mei AB, Nedfors N, Zhirkov I, Rosen J, Reed A, Howe B, Greczynski G, Birch J, Hultman L, Greene JE. Controlling the boron-to-titanium ratio in magnetron-sputter-deposited TiBx thin films Journal of Vacuum Science and Technology. 35: 50601. DOI: 10.1116/1.4982649 |
0.66 |
|
| 2017 |
Zheng Q, Mei AB, Tuteja M, Sangiovanni DG, Hultman L, Petrov I, Greene JE, Cahill DG. Phonon and electron contributions to the thermal conductivity of
VNx
epitaxial layers Physical Review Materials. 1. DOI: 10.1103/Physrevmaterials.1.065002 |
0.372 |
|
| 2017 |
Fager H, Tengstrand O, Lu J, Bolz S, Mesic B, Kölker W, Schiffers C, Lemmer O, Greene JE, Hultman L, Petrov I, Greczynski G. Low-temperature growth of dense and hard Ti0.41Al0.51Ta0.08N films via hybrid HIPIMS/DC magnetron co-sputtering with synchronized metal-ion irradiation Journal of Applied Physics. 121: 171902. DOI: 10.1063/1.4977818 |
0.456 |
|
| 2017 |
Edström D, Sangiovanni D, Hultman L, Petrov I, Greene JE, Chirita V. Effects of incident N atom kinetic energy on TiN/TiN(001) film growth dynamics: A molecular dynamics investigation Journal of Applied Physics. 121: 25302. DOI: 10.1063/1.4972963 |
0.478 |
|
| 2017 |
Kindlund H, Greczynski G, Broitman E, Martínez-de-Olcoz L, Lu J, Jensen J, Petrov I, Greene JE, Birch J, Hultman L. V0.5Mo0.5Nx/MgO(001): Composition, nanostructure, and mechanical properties as a function of film growth temperature Acta Materialia. 126: 194-201. DOI: 10.1016/J.Actamat.2016.12.048 |
0.431 |
|
| 2016 |
Edström D, Sangiovanni D, Hultman L, Petrov I, Greene JE, Chirita V. Large-scale molecular dynamics simulations of TiN/TiN(001) epitaxial film growth Journal of Vacuum Science and Technology. 34: 41509. DOI: 10.1116/1.4953404 |
0.401 |
|
| 2016 |
Yu C, Lee CM, Chu JP, Greene JE, Liaw PK. Fracture-resistant thin-film metallic glass: Ultra-high plasticity at room temperature Apl Materials. 4: 116101. DOI: 10.1063/1.4966932 |
0.441 |
|
| 2016 |
Mei AB, Tuteja M, Sangiovanni D, Haasch RT, Rockett A, Hultman L, Petrov I, Greene JE. Growth, nanostructure, and optical properties of epitaxial VNx/MgO(001) (0.80 ≤ x ≤ 1.00) layers deposited by reactive magnetron sputtering Journal of Materials Chemistry C. 4: 7924-7938. DOI: 10.1039/C6Tc02289H |
0.446 |
|
| 2016 |
Sangiovanni D, Mei AB, Hultman L, Chirita V, Petrov I, Greene JE. Ab Initio Molecular Dynamics Simulations of Nitrogen/VN(001) Surface Reactions: Vacancy-Catalyzed N2 Dissociative Chemisorption, N Adatom Migration, and N2 Desorption Journal of Physical Chemistry C. 120: 12503-12516. DOI: 10.1021/Acs.Jpcc.6B02652 |
0.31 |
|
| 2016 |
Greczynski G, Lu J, Tengstrand O, Petrov I, Greene JE, Hultman L. Nitrogen-doped bcc-Cr films: Combining ceramic hardness with metallic toughness and conductivity Scripta Materialia. 122: 40-44. DOI: 10.1016/J.Scriptamat.2016.05.011 |
0.356 |
|
| 2016 |
Sangiovanni DG, Hultman L, Chirita V, Petrov I, Greene JE. Effects of phase stability, lattice ordering, and electron density on plastic deformation in cubic TiWN pseudobinary transition-metal nitride alloys Acta Materialia. 103: 823-835. DOI: 10.1016/J.Actamat.2015.10.039 |
0.363 |
|
| 2015 |
Fager H, Howe BM, Greczynski G, Jensen J, Mei AB, Lu J, Hultman L, Greene JE, Petrov I. Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4920980 |
0.526 |
|
| 2015 |
Greczynski G, Petrov I, Greene JE, Hultman L. Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4916239 |
0.479 |
|
| 2015 |
Mei AB, Hellman O, Schlepütz CM, Rockett A, Chiang TC, Hultman L, Petrov I, Greene JE. Reflection thermal diffuse x-ray scattering for quantitative determination of phonon dispersion relations Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.174301 |
0.342 |
|
| 2015 |
Mei AB, Hellman O, Wireklint N, Schlepütz CM, Sangiovanni DG, Alling B, Rockett A, Hultman L, Petrov I, Greene JE. Dynamic and structural stability of cubic vanadium nitride Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.054101 |
0.362 |
|
| 2015 |
Greczynski G, Petrov I, Greene JE, Hultman L. Strategy for tuning the average charge state of metal ions incident at the growing film during HIPIMS deposition Vacuum. 116: 36-41. DOI: 10.1016/J.Vacuum.2015.02.027 |
0.353 |
|
| 2015 |
Edström D, Sangiovanni DG, Hultman L, Petrov I, Greene JE, Chirita V. The dynamics of TiNx (x = 1-3) admolecule interlayer and intralayer transport on TiN/TiN(001) islands Thin Solid Films. 589: 133-144. DOI: 10.1016/J.Tsf.2015.05.013 |
0.336 |
|
| 2015 |
Greczynski G, Patscheider J, Lu J, Alling B, Ektarawong A, Jensen J, Petrov I, Greene JE, Hultman L. Control of Ti1-xSixN nanostructure via tunable metal-ion momentum transfer during HIPIMS/DCMS co-deposition Surface and Coatings Technology. 280: 174-184. DOI: 10.1016/J.Surfcoat.2015.09.001 |
0.405 |
|
| 2015 |
Ghafoor N, Petrov I, Klenov DO, Freitag B, Jensen J, Greene JE, Hultman L, Odén M. Self-organized anisotropic (Zr1-xSix)Ny nanocomposites grown by reactive sputter deposition Acta Materialia. 82: 179-189. DOI: 10.1016/J.Actamat.2014.09.029 |
0.525 |
|
| 2014 |
Greczynski G, Jensen J, Greene JE, Petrov I, Hultman L. X-ray Photoelectron Spectroscopy Analyses of the Electronic Structure of Polycrystalline Ti1-xAlxN Thin Films with 0 ≤ x ≤ 0.96 Surface Science Spectra. 21: 35-49. DOI: 10.1116/11.20140506 |
0.497 |
|
| 2014 |
Greczynski G, Lu J, Bolz S, Kölker W, Schiffers C, Lemmer O, Petrov I, Greene JE, Hultman L. Novel strategy for low-temperature, high-rate growth of dense, hard, and stress-free refractory ceramic thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4884575 |
0.515 |
|
| 2014 |
Kindlund H, Sangiovanni DG, Lu J, Jensen J, Chirita V, Petrov I, Greene JE, Hultman L. Effect of WN content on toughness enhancement in V1-xW xN/MgO(001) thin films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4867610 |
0.388 |
|
| 2014 |
Greene JE. Organic thin films: From monolayers on liquids to multilayers on solids Physics Today. 67: 43-48. DOI: 10.1063/Pt.3.2419 |
0.373 |
|
| 2014 |
Mei AB, Wilson RB, Li D, Cahill DG, Rockett A, Birch J, Hultman L, Greene JE, Petrov I. Elastic constants, Poisson ratios, and the elastic anisotropy of VN(001), (011), and (111) epitaxial layers grown by reactive magnetron sputter deposition Journal of Applied Physics. 115. DOI: 10.1063/1.4881817 |
0.351 |
|
| 2014 |
Edström D, Sangiovanni DG, Hultman L, Chirita V, Petrov I, Greene JE. Ti and N adatom descent pathways to the terrace from atop two-dimensional TiN/TiN(001) islands Thin Solid Films. 558: 37-46. DOI: 10.1016/J.Tsf.2014.02.053 |
0.355 |
|
| 2014 |
Greczynski G, Lu J, Jensen J, Petrov I, Greene JE, Bolz S, Kölker W, Schiffers C, Lemmer O, Hultman L. Strain-free, single-phase metastable Ti0.38Al0.62N alloys with high hardness: Metal-ion energy vs. momentum effects during film growth by hybrid high-power pulsed/dc magnetron cosputtering Thin Solid Films. 556: 87-98. DOI: 10.1016/J.Tsf.2014.01.017 |
0.44 |
|
| 2014 |
Tholander C, Alling B, Tasnádi F, Greene JE, Hultman L. Effect of Al substitution on Ti, Al, and N adatom dynamics on TiN(001), (011), and (111) surfaces Surface Science. 630: 28-40. DOI: 10.1016/J.Susc.2014.06.010 |
0.309 |
|
| 2014 |
Sangiovanni DG, Edströma D, Hultmana L, Petrov I, Greene JE, Chirita V. Ti adatom diffusion on TiN(001): Ab initio and classical molecular dynamics simulations Surface Science. 627: 34-41. DOI: 10.1016/J.Susc.2014.04.007 |
0.359 |
|
| 2014 |
Sangiovanni DG, Edström D, Hultman L, Petrov I, Greene JE, Chirita V. Ab initio and classical molecular dynamics simulations of N2 desorption from TiN(001) surfaces Surface Science. 624: 25-31. DOI: 10.1016/J.Susc.2014.01.007 |
0.317 |
|
| 2014 |
Eriksson AO, Tengstrand O, Lu J, Jensen J, Eklund P, Rosén J, Petrov I, Greene JE, Hultman L. Si incorporation in Ti1-xSixN films grown on TiN(001) and (001)-faceted TiN(111) columns Surface and Coatings Technology. 257: 121-128. DOI: 10.1016/J.Surfcoat.2014.05.043 |
0.537 |
|
| 2014 |
Greczynski G, Lu J, Jensen J, Bolz S, Kölker W, Schiffers C, Lemmer O, Greene JE, Hultman L. A review of metal-ion-flux-controlled growth of metastable TiAlN by HIPIMS/DCMS co-sputtering Surface & Coatings Technology. 257: 15-25. DOI: 10.1016/J.Surfcoat.2014.01.055 |
0.46 |
|
| 2014 |
Kindlund H, Sangiovanni DG, Lu J, Jensen J, Chirita V, Birch J, Petrov I, Greene JE, Hultman L. Vacancy-induced toughening in hard single-crystal V0.5Mo 0.5Nx/MgO(0 0 1) thin films Acta Materialia. 77: 394-400. DOI: 10.1016/J.Actamat.2014.06.025 |
0.393 |
|
| 2013 |
Greczynski G, Kindlund H, Petrov I, Greene JE, Hultman L. Sputter-cleaned Epitaxial VxMo(1-x)Ny/MgO(001) Thin Films Analyzed by X-ray Photoelectron Spectroscopy: 3. Polycrystalline V0.49Mo0.51N1.02 Surface Science Spectra. 20: 80-85. DOI: 10.1116/11.20130602 |
0.494 |
|
| 2013 |
Greczynski G, Kindlund H, Petrov I, Greene JE, Hultman L. Sputter-cleaned Epitaxial VxMo(1-x)Ny/MgO(001) Thin Films Analyzed by X-ray Photoelectron Spectroscopy: 2. Single-crystal V0.47Mo0.53N0.92 Surface Science Spectra. 20: 74-79. DOI: 10.1116/11.20130601 |
0.499 |
|
| 2013 |
Mei AB, Howe BM, Zhang C, Sardela M, Eckstein JN, Hultman L, Rockett A, Petrov I, Greene JE. Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 061516. DOI: 10.1116/1.4825349 |
0.452 |
|
| 2013 |
Kindlund H, Lu J, Jensen J, Petrov I, Greene JE, Hultman L. Epitaxial V0.6W0.4N/MgO(001): Evidence for ordering on the cation sublattice Journal of Vacuum Science and Technology. 31: 40602. DOI: 10.1116/1.4807654 |
0.342 |
|
| 2013 |
Kindlund H, Sangiovanni D, Martínez-de-Olcoz L, Lu J, Jensen J, Birch J, Petrov I, Greene J, Chirita V, Hultman L. Toughness enhancement in hard ceramic thin films by alloy design Apl Materials. 1: 42104. DOI: 10.1063/1.4822440 |
0.39 |
|
| 2012 |
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE. The Si3N4/TiN Interface: An Introduction to a Series of Ultrathin Films Grown and Analyzed In situ using X-ray Photoelectron Spectroscopy Surface Science Spectra. 19: 30-32. DOI: 10.1116/11.20121108 |
0.423 |
|
| 2012 |
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE. The Si3N4/TiN Interface: 7. Ti/TiN(001) Grown and Analyzed In situ using X-ray Photoelectron Spectroscopy Surface Science Spectra. 19: 92-97. DOI: 10.1116/11.20121007 |
0.46 |
|
| 2012 |
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE. The Si3N4/TiN Interface: 6. Si/TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surface Science Spectra. 19: 82-91. DOI: 10.1116/11.20121006 |
0.486 |
|
| 2012 |
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE. The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surface Science Spectra. 19: 62-71. DOI: 10.1116/11.20121004 |
0.455 |
|
| 2012 |
Haasch RT, Patscheider J, Hellgren N, Petrov I, Greene JE. The Si3N4/TiN Interface: 1. TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surface Science Spectra. 19: 33-41. DOI: 10.1116/11.20121001 |
0.455 |
|
| 2012 |
Greczynski G, Lu J, Jensen J, Petrov I, Greene JE, Bolz S, Kölker W, Schiffers C, Lemmer O, Hultman L. Metal versus rare-gas ion irradiation during Ti1−xAlxN film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias Journal of Vacuum Science and Technology. 30: 61504. DOI: 10.1116/1.4750485 |
0.382 |
|
| 2012 |
Alling B, Steneteg P, Tholander C, Tasnádi F, Petrov I, Greene JE, Hultman L. Configurational disorder effects on adatom mobilities on Ti1−xAlxN(001) surfaces from first principles Physical Review B. 85: 245422. DOI: 10.1103/Physrevb.85.245422 |
0.313 |
|
| 2012 |
Greczynski G, Lu J, Johansson M, Jensen J, Petrov I, Greene JE, Hultman L. Selection of metal ion irradiation for controlling Ti1-xAlxN alloy growth via hybrid HIPIMS/magnetron co-sputtering Vacuum. 86: 1036-1040. DOI: 10.1016/J.Vacuum.2011.10.027 |
0.369 |
|
| 2012 |
Greczynski G, Lu J, Johansson MP, Jensen J, Petrov I, Greene JE, Hultman L. Role of Ti n+ and Al n+ ion irradiation (n=1, 2) during Ti 1-xAl xN alloy film growth in a hybrid HIPIMS/magnetron mode Surface and Coatings Technology. 206: 4202-4211. DOI: 10.1016/J.Surfcoat.2012.04.024 |
0.472 |
|
| 2012 |
Chu JP, Greene JE, Jang JSC, Huang JC, Shen YL, Liaw PK, Yokoyama Y, Inoue A, Nieh TG. Bendable bulk metallic glass: Effects of a thin, adhesive, strong, and ductile coating Acta Materialia. 60: 3226-3238. DOI: 10.1016/J.Actamat.2012.02.037 |
0.36 |
|
| 2011 |
Patscheider J, Hellgren N, Haasch RT, Petrov I, Greene JE. Electronic structure of the SiN x /TiN interface: A model system for superhard nanocomposites Physical Review B. 83: 125124. DOI: 10.1103/Physrevb.83.125124 |
0.421 |
|
| 2011 |
Stoehr M, Shin C-, Petrov I, Greene JE. Raman scattering from TiNx (0.67 ≤ x ≤ 1.00) single crystals grown on MgO(001) Journal of Applied Physics. 110: 83503. DOI: 10.1063/1.3651381 |
0.359 |
|
| 2011 |
Cho B, Bareño J, Petrov I, Greene JE. Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition Journal of Applied Physics. 109: 93526. DOI: 10.1063/1.3587226 |
0.713 |
|
| 2011 |
Bratland KA, Spila T, Cahill DG, Greene JE, Desjardins P. Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3556745 |
0.445 |
|
| 2011 |
Howe BM, Sammann E, Wen JG, Spila T, Greene JE, Hultman L, Petrov I. Real-time control of AlN incorporation in epitaxial Hf1 − xAlxN using high-flux, low-energy (10–40 eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target Acta Materialia. 59: 421-428. DOI: 10.1016/J.Actamat.2010.08.023 |
0.491 |
|
| 2010 |
Lattemann M, Helmersson U, Greene JE. Fully dense, non-faceted 111-textured high power impulse magnetron sputtering TiN films grown in the absence of substrate heating and bias Thin Solid Films. 518: 5978-5980. DOI: 10.1016/J.Tsf.2010.05.064 |
0.47 |
|
| 2010 |
Lee T, Seo H, Hwang H, Howe B, Kodambaka S, Greene J, Petrov I. Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition Thin Solid Films. 518: 5169-5172. DOI: 10.1016/J.Tsf.2010.04.028 |
0.507 |
|
| 2008 |
Stoehr M, Seo H-, Petrov I, Greene JE. Effect of off stoichiometry on Raman scattering from epitaxial and polycrystalline HfNx (0.85≤x≤ 1.50) grown on MgO(001) Journal of Applied Physics. 104: 33507. DOI: 10.1063/1.2961332 |
0.334 |
|
| 2008 |
Cho B, Bareño J, Foo YL, Hong S, Spila T, Petrov I, Greene JE. Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology Journal of Applied Physics. 103: 123530. DOI: 10.1063/1.2925798 |
0.736 |
|
| 2007 |
Adamovic D, Chirita V, Münger P, Hultman L, Greene JE. Kinetic pathways leading to layer-by-layer growth from hyperthermal atoms : A Multibillion time step molecular dynamics study Physical Review B. 76: 115418-115425. DOI: 10.1103/Physrevb.76.115418 |
0.333 |
|
| 2007 |
Hultman L, Bareño J, Flink A, Söderberg H, Larsson K, Petrova V, Odén M, Greene JE, Petrov I. Interface structure in superhard TiN-SiN nanolaminates and nanocomposites : film growth experiments and ab initio calculations Physical Review B. 75: 155437. DOI: 10.1103/Physrevb.75.155437 |
0.693 |
|
| 2007 |
Stoehr M, Shin C-, Petrov I, Greene JE. Raman scattering from epitaxial TaNx (0.94 ≤x≤ 1.37) layers grown on MgO(001) Journal of Applied Physics. 101: 123509. DOI: 10.1063/1.2748354 |
0.307 |
|
| 2007 |
Howe B, Bareño J, Sardela M, Wen JG, Greene JE, Hultman L, Voevodin AA, Petrov I. Growth and physical properties of epitaxial metastable Hf1 − xAlxN alloys deposited on MgO(001) by ultrahigh vacuum reactive magnetron sputtering Surface & Coatings Technology. 202: 809-814. DOI: 10.1016/J.Surfcoat.2007.05.079 |
0.711 |
|
| 2006 |
Mayrhofer PH, Mitterer C, Wen JG, Petrov I, Greene JE. Thermally induced self-hardening of nanocrystalline Ti-B-N thin films Journal of Applied Physics. 100: 44301. DOI: 10.1063/1.2222406 |
0.481 |
|
| 2006 |
Lim CW, Greene JE, Petrov I. CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation Journal of Applied Physics. 100: 13510. DOI: 10.1063/1.2213351 |
0.519 |
|
| 2006 |
Hong S, Kim H-, Bae DK, Song SC, Lee G-, Yoon E, Kim CS, Foo YL, Greene JE. Formation of flat, relaxed Si1-xGex alloys on Si(001) without buffer layers Applied Physics Letters. 88: 122103. DOI: 10.1063/1.2188043 |
0.435 |
|
| 2006 |
Wen J, Mayrhofer P, Mitterer C, Greene J, Petrov I. Self-hardening of Nanocrystalline Ti-B-N Thin Films Microscopy and Microanalysis. 12: 720-721. DOI: 10.1017/S1431927606067559 |
0.36 |
|
| 2006 |
Lim CW, Petrov I, Greene JE. Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence Thin Solid Films. 515: 1340-1348. DOI: 10.1016/J.Tsf.2006.03.043 |
0.457 |
|
| 2006 |
Bareño J, Kodambaka S, Khare SV, Świech W, Petrov I, Greene JE. Orientation-dependent mobilities from analyses of two-dimensional TiN(111) island decay kinetics Thin Solid Films. 510: 339-345. DOI: 10.1016/J.Tsf.2005.12.164 |
0.665 |
|
| 2006 |
Kodambaka S, Khare SV, Petrov I, Greene JE. Two-dimensional island dynamics: Role of step energy anisotropy Surface Science Reports. 60: 55-77. DOI: 10.1016/J.Surfrep.2005.10.002 |
0.331 |
|
| 2005 |
Ohmori K, Foo YL, Hong S, Wen JG, Greene JE, Petrov I. Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces. Nano Letters. 5: 369-72. PMID 15794627 DOI: 10.1021/Nl048340W |
0.37 |
|
| 2005 |
Robinson IK, Da Y, Spila T, Greene JE. Coherent diffraction patterns of individual dislocation strain fields Journal of Physics D: Applied Physics. 38. DOI: 10.1088/0022-3727/38/10A/002 |
0.37 |
|
| 2005 |
Kodambaka S, Barẽo J, Khare SV, Świȩch W, Petrov I, Greene JE. Nucleation and growth kinetics of spiral steps on TiN(111): An in situ low-energy electron microscopy study Journal of Applied Physics. 98. DOI: 10.1063/1.1977193 |
0.389 |
|
| 2005 |
Adamovic D, Münger EP, Chirita V, Hultman L, Greene JE. Low-energy ion irradiation during film growth: Kinetic pathways leading to enhanced adatom migration rates Applied Physics Letters. 86: 211915. DOI: 10.1063/1.1940122 |
0.362 |
|
| 2005 |
Mayrhofer PH, Mitterer C, Wen JG, Greene JE, Petrov I. Self-organized nanocolumnar structure in superhard TiB2 thin films Applied Physics Letters. 86: 131909. DOI: 10.1063/1.1887824 |
0.421 |
|
| 2005 |
Seo H, Lee T, Petrov I, Greene JE, Gall D. Epitaxial and polycrystalline HfNx (0.8⩽x⩽1.5) layers on MgO(001): Film growth and physical properties Journal of Applied Physics. 97: 083521. DOI: 10.1063/1.1870097 |
0.464 |
|
| 2005 |
Bratland KA, Foo YL, Spila T, Seo H, Haasch RT, Desjardins P, Greene JE. Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness Journal of Applied Physics. 97: 044904. DOI: 10.1063/1.1848188 |
0.45 |
|
| 2005 |
Lim CW, Shin C-, Gall D, Zuo JM, Petrov I, Greene JE. Growth of CoSi2 on Si(001) by reactive deposition epitaxy Journal of Applied Physics. 97: 44909. DOI: 10.1063/1.1774263 |
0.503 |
|
| 2005 |
Lee GR, Lee JJ, Shin CS, Petrov I, Greene JE. Self-organized lamellar structured tantalum–nitride by UHV unbalanced-magnetron sputtering Thin Solid Films. 475: 45-48. DOI: 10.1016/J.Tsf.2004.07.070 |
0.465 |
|
| 2005 |
Wall MA, Cahill DG, Petrov I, Gall D, Greene JE. Nucleation kinetics versus nitrogen partial pressure during homoepitaxial growth of stoichiometric TiN(0 0 1): A scanning tunneling microscopy study Surface Science. 581: L122-L127. DOI: 10.1016/J.Susc.2005.03.007 |
0.421 |
|
| 2004 |
Kodambaka S, Khare SV, Swiech W, Ohmori K, Petrov I, Greene JE. Dislocation-driven surface dynamics on solids. Nature. 429: 49-52. PMID 15129275 DOI: 10.1038/Nature02495 |
0.352 |
|
| 2004 |
Wall MA, Cahill DG, Petrov I, Gall D, Greene JE. Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering Physical Review B - Condensed Matter and Materials Physics. 70: 035413-1-035413-8. DOI: 10.1103/Physrevb.70.035413 |
0.435 |
|
| 2004 |
Watanabe F, Cahill DG, Hong S, Greene JE. Strained layer instabilities on vicinal surfaces: Ge 0.8Si 0.2 epitaxy on laser textured Si(001) Applied Physics Letters. 85: 1238-1240. DOI: 10.1063/1.1780604 |
0.448 |
|
| 2004 |
Seo H, Lee T, Wen JG, Petrov I, Greene JE, Gall D. Growth and physical properties of epitaxial HfN layers on MgO(001) Journal of Applied Physics. 96: 878-884. DOI: 10.1063/1.1759783 |
0.445 |
|
| 2004 |
Lee T-, Kodambaka S, Wen JG, Twesten RD, Greene JE, Petrov I. Directed nanostructural evolution in Ti0.8Ce0.2N layers grown as a function of low-energy, high-flux ion irradiation Applied Physics Letters. 84: 2796-2798. DOI: 10.1063/1.1699468 |
0.509 |
|
| 2004 |
Shin C-, Rudenja S, Gall D, Hellgren N, Lee T-, Petrov I, Greene JE. Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67⩽x<1.0) layers on MgO(001) Journal of Applied Physics. 95: 356-362. DOI: 10.1063/1.1629155 |
0.428 |
|
| 2004 |
Kodambaka S, Khare SV, Petrova V, Vailionis A, Petrov I, Greene JE. Determination of absolute orientation-dependent TiN(0 0 1) and TiN(1 1 1) step energies Vacuum. 74: 345-351. DOI: 10.1016/J.Vacuum.2004.01.015 |
0.351 |
|
| 2004 |
Watanabe F, Kodambaka S, Swiech W, Greene JE, Cahill DG. LEEM study of island decay on Si(1 1 0) Surface Science. 572: 425-432. DOI: 10.1016/J.Susc.2004.09.014 |
0.416 |
|
| 2004 |
Kodambaka S, Israeli N, Bareño J, Święch W, Ohmori K, Petrov I, Greene JE. Low-energy electron microscopy studies of interlayer mass transport kinetics on TiN(111) Surface Science. 560: 53-62. DOI: 10.1016/J.Susc.2004.05.005 |
0.689 |
|
| 2003 |
Tian F, D’Arcy-Gall J, Lee T-, Sardela M, Gall D, Petrov I, Greene JE. Epitaxial Ti1-xWxN alloys grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering: Electronic properties and long-range cation ordering Journal of Vacuum Science and Technology. 21: 140-146. DOI: 10.1116/1.1525818 |
0.419 |
|
| 2003 |
Bratland KA, Foo YL, Soares JANT, Spila T, Desjardins P, Greene JE. Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy Physical Review B. 67. DOI: 10.1103/Physrevb.67.125322 |
0.427 |
|
| 2003 |
Kodambaka S, Khare SV, Petrova V, Johnson DD, Petrov I, Greene JE. Absolute orientation-dependent anisotropic TiN(111) island step energies and stiffnesses from shape fluctuation analyses Physical Review B - Condensed Matter and Materials Physics. 67: 354091-354098. DOI: 10.1103/Physrevb.67.035409 |
0.319 |
|
| 2003 |
Moon DW, Lee HI, Cho B, Foo YL, Spila T, Hong S, Greene JE. Direct measurements of strain depth profiles in Ge/Si(001) nanostructures Applied Physics Letters. 83: 5298-5300. DOI: 10.1063/1.1635074 |
0.407 |
|
| 2003 |
Hong S, Foo YL, Bratland KA, Spila T, Ohmori K, Sardela MR, Greene JE, Yoon E. Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing Applied Physics Letters. 83: 4321-4323. DOI: 10.1063/1.1629792 |
0.412 |
|
| 2003 |
Bratland KA, Foo YL, Desjardins P, Greene JE. Publisher’s Note: “Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy” [Appl. Phys. Lett. 82, 4247 (2003)] Applied Physics Letters. 83: 1056-1056. DOI: 10.1063/1.1597894 |
0.36 |
|
| 2003 |
Lee T, Gall D, Shin C, Hellgren N, Petrov I, Greene JE. Growth and physical properties of epitaxial CeN layers on MgO(001) Journal of Applied Physics. 94: 921-927. DOI: 10.1063/1.1579113 |
0.467 |
|
| 2003 |
Bratland KA, Foo YL, Desjardins P, Greene JE. Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy Applied Physics Letters. 82: 4247-4249. DOI: 10.1063/1.1578712 |
0.435 |
|
| 2003 |
Shin C-, Gall D, Hellgren N, Patscheider J, Petrov I, Greene JE. Vacancy hardening in single-crystal TiNx(001) layers Journal of Applied Physics. 93: 6025-6028. DOI: 10.1063/1.1568521 |
0.372 |
|
| 2003 |
Foo YL, Bratland KA, Cho B, Desjardins P, Greene JE. Si1−yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics Journal of Applied Physics. 93: 3944-3950. DOI: 10.1063/1.1555704 |
0.48 |
|
| 2003 |
Spila T, Desjardins P, D’Arcy-Gall J, Twesten RD, Greene JE. Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1−xGex/Si(001) growth from hydride precursors Journal of Applied Physics. 93: 1918-1925. DOI: 10.1063/1.1533833 |
0.462 |
|
| 2003 |
Kodambaka S, Chopp DL, Petrov I, Greene JE. Coalescence kinetics of two-dimensional TiN islands on atomically smooth TiN(0 0 1) and TiN(1 1 1) terraces Surface Science. 540: L611-L616. DOI: 10.1016/S0039-6028(03)00846-X |
0.351 |
|
| 2003 |
Kodambaka S, Petrova V, Vailionis A, Petrov I, Greene JE. In situ high-temperature scanning tunneling microscopy studies of two-dimensional TiN island coarsening kinetics on TiN (0 0 1) Surface Science. 526: 85-96. DOI: 10.1016/S0039-6028(02)02570-0 |
0.369 |
|
| 2003 |
Kodambaka S, Khare S, Petrova V, Vailionis A, Petrov I, Greene J. Erratum to: “Absolute orientation-dependent TiN(001) step energies from two-dimensional equilibrium island shape and coarsening measurements on epitaxial TiN(001) layers” [Surf. Sci. 513 (2002) 468–474] Surface Science. 523: 316. DOI: 10.1016/S0039-6028(02)02457-3 |
0.325 |
|
| 2002 |
Kodambaka S, Petrova V, Khare SV, Gall D, Rockett A, Petrov I, Greene JE. Size-dependent detachment-limited decay kinetics of two-dimensional TiN islands on TiN(111). Physical Review Letters. 89: 176102. PMID 12398688 DOI: 10.1103/Physrevlett.89.176102 |
0.338 |
|
| 2002 |
Kodambaka S, Petrova V, Khare SV, Johnson DD, Petrov I, Greene JE. Absolute TiN(111) step energies from analysis of anisotropic island shape fluctuations. Physical Review Letters. 88: 146101. PMID 11955162 DOI: 10.1103/Physrevlett.88.146101 |
0.314 |
|
| 2002 |
Shin C-, Kim Y-, Hellgren N, Gall D, Petrov I, Greene JE. Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering Journal of Vacuum Science and Technology. 20: 2007-2017. DOI: 10.1116/1.1513639 |
0.502 |
|
| 2002 |
Cho B, Schwarz-Selinger T, Ohmori K, Cahill DG, Greene JE. Effect of growth rate on the spatial distributions of dome-shaped Ge islands on Si(001) Physical Review B. 66. DOI: 10.1103/Physrevb.66.195407 |
0.427 |
|
| 2002 |
Schwarz-Selinger T, Foo YL, Cahill DG, Greene JE. Surface mass transport and island nucleation during growth of Ge on laser textured Si(001) Physical Review B. 65. DOI: 10.1103/Physrevb.65.125317 |
0.432 |
|
| 2002 |
Shin C-, Gall D, Kim Y-, Hellgren N, Petrov I, Greene JE. Development of preferred orientation in polycrystalline NaCl-structure δ-TaN layers grown by reactive magnetron sputtering: Role of low-energy ion surface interactions Journal of Applied Physics. 92: 5084-5093. DOI: 10.1063/1.1510558 |
0.451 |
|
| 2002 |
Gall D, Shin C-, Haasch RT, Petrov I, Greene JE. Band gap in epitaxial NaCl-structure CrN(001) layers Journal of Applied Physics. 91: 5882-5886. DOI: 10.1063/1.1466528 |
0.421 |
|
| 2002 |
Park SY, D’Arcy-Gall J, Gall D, Soares JANT, Kim Y, Kim H, Desjardins P, Greene JE, Bishop SG. Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy Journal of Applied Physics. 91: 5716-5727. DOI: 10.1063/1.1465122 |
0.435 |
|
| 2002 |
Spila T, Desjardins P, Vailionis A, Kim H, Taylor N, Cahill DG, Greene JE, Guillon S, Masut RA. Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001) Journal of Applied Physics. 91: 3579-3588. DOI: 10.1063/1.1448680 |
0.492 |
|
| 2002 |
Park SY, D’Arcy-Gall J, Gall D, Kim Y, Desjardins P, Greene JE. C lattice site distributions in metastable Ge1−yCy alloys grown on Ge(001) by molecular-beam epitaxy Journal of Applied Physics. 91: 3644-3652. DOI: 10.1063/1.1448677 |
0.373 |
|
| 2002 |
Gall D, Shin C-, Spila T, Odén M, Senna MJH, Greene JE, Petrov I. Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties Journal of Applied Physics. 91: 3589-3597. DOI: 10.1063/1.1446239 |
0.421 |
|
| 2002 |
Shin C-, Kim Y-, Gall D, Greene JE, Petrov I. Phase composition and microstructure of polycrystalline and epitaxial TaNx layers grown on oxidized Si(001) and MgO(001) by reactive magnetron sputter deposition Thin Solid Films. 402: 172-182. DOI: 10.1016/S0040-6090(01)01618-2 |
0.469 |
|
| 2002 |
Kodambaka S, Khare SV, Petrova V, Vailionis A, Petrov I, Greene JE. Absolute orientation-dependent TiN(0 0 1) step energies from two-dimensional equilibrium island shape and coarsening measurements on epitaxial TiN(0 0 1) layers Surface Science. 513: 468-474. DOI: 10.1016/S0039-6028(02)01845-9 |
0.343 |
|
| 2002 |
Foo Y, Bratland K, Cho B, Soares J, Desjardins P, Greene J. C incorporation and segregation during Si1−yCy/Si() gas-source molecular beam epitaxy from Si2H6 and CH3SiH3 Surface Science. 513: 475-484. DOI: 10.1016/S0039-6028(02)01821-6 |
0.404 |
|
| 2002 |
Kim H, Greene JE. Hydrogen desorption kinetics and Ge2H6 reactive sticking probabilities on Ge-adsorbed Si(0 1 1) Surface Science. 504: 108-114. DOI: 10.1016/S0039-6028(01)01922-7 |
0.43 |
|
| 2001 |
Baumann FH, Chopp DL, Rubia TDdl, Gilmer GH, Greene JE, Huang H, Kodambaka S, O'Sullivan P, Petrov I. Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing Mrs Bulletin. 26: 182-189. DOI: 10.1557/Mrs2001.40 |
0.368 |
|
| 2001 |
Chun J, Desjardins P, Lavoie C, Petrov I, Cabral C, Greene JE. Interfacial reaction pathways and kinetics during annealing of 111-textured Al/TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 2207-2216. DOI: 10.1116/1.1379800 |
0.479 |
|
| 2001 |
Chun J, Carlsson J, Desjardins P, Bergstrom D, Petrov I, Greene J, Lavoie C, Cabral C, Hultman L. Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers Journal of Vacuum Science and Technology. 19: 182-191. DOI: 10.1116/1.1322648 |
0.481 |
|
| 2001 |
Gall D, Stoehr M, Greene JE. Vibrational modes in epitaxial Ti 1 − x Sc x N ( 001 ) layers: An ab initio calculation and Raman spectroscopy study Physical Review B. 64: 174302. DOI: 10.1103/Physrevb.64.174302 |
0.317 |
|
| 2001 |
Gall D, Städele M, Järrendahl K, Petrov I, Desjardins P, Haasch RT, Lee T, Greene JE. Electronic structure of ScN determined using optical spectroscopy, photoemission, andab initiocalculations Physical Review B. 63. DOI: 10.1103/Physrevb.63.125119 |
0.334 |
|
| 2001 |
Kim H, Glass G, Soares JANT, Foo YL, Desjardins P, Greene JE. Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation Applied Physics Letters. 79: 3263-3265. DOI: 10.1063/1.1415420 |
0.497 |
|
| 2001 |
D’Arcy-Gall J, Gall D, Petrov I, Desjardins P, Greene JE. Quantitative C lattice site distributions in epitaxial Ge1−yCy/Ge(001) layers Journal of Applied Physics. 90: 3910-3918. DOI: 10.1063/1.1402137 |
0.36 |
|
| 2001 |
Shin C-, Gall D, Kim Y-, Desjardins P, Petrov I, Greene JE, Odén M, Hultman L. Epitaxial NaCl structure d-TaNx(001): Electronic transport properties, elastic modulus, and hardness versus N/Ta ratio Journal of Applied Physics. 90: 2879-2885. DOI: 10.1063/1.1391214 |
0.386 |
|
| 2001 |
Chun J, Desjardins P, Lavoie C, Shin C, Cabral C, Petrov I, Greene JE. Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer Journal of Applied Physics. 89: 7841-7845. DOI: 10.1063/1.1372162 |
0.455 |
|
| 2001 |
Williamson MJ, Dunn DN, Hull R, Kodambaka S, Petrov I, Greene JE. Evolution of nanoscale texture in ultrathin TiN films Applied Physics Letters. 78: 2223-2225. DOI: 10.1063/1.1360235 |
0.417 |
|
| 2001 |
Kim H, Glass G, Desjardins P, Greene JE. Ultra-highly doped Si1−xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics Journal of Applied Physics. 89: 194-205. DOI: 10.1063/1.1330244 |
0.441 |
|
| 2001 |
Gall D, Petrov I, Greene JE. Epitaxial Sc1−xTixN(001): Optical and electronic transport properties Journal of Applied Physics. 89: 401-409. DOI: 10.1063/1.1329348 |
0.388 |
|
| 2001 |
Kodambaka S, Petrova V, Vailionis A, Desjardins P, Cahill D, Petrov I, Greene J. TiN(001) and TiN(111) island coarsening kinetics: in-situ scanning tunneling microscopy studies Thin Solid Films. 392: 164-168. DOI: 10.1016/S0040-6090(01)01022-7 |
0.359 |
|
| 2001 |
Chun J, Desjardins P, Petrov I, Greene J, Lavoie C, Cabral C. Interfacial reaction pathways and kinetics during annealing of epitaxial Al/TiN(001) model diffusion barrier systems Thin Solid Films. 391: 69-80. DOI: 10.1016/S0040-6090(01)00938-5 |
0.422 |
|
| 2001 |
Kim H, Spila T, Greene JE. Si(113) hydrogen desorption kinetics: A temperature programmed desorption study Surface Science. 490. DOI: 10.1016/S0039-6028(01)01340-1 |
0.385 |
|
| 2001 |
Taylor N, Kim H, Greene JE. Ge surface segregation during Si1−xGex(011) gas-source molecular beam epitaxy from Si2H6 and Ge2H6 Surface Science. 475: 171-180. DOI: 10.1016/S0039-6028(00)01108-0 |
0.456 |
|
| 2000 |
Ramanath G, Greene JE, Petrov I, Baker JE, Allen LH, Gillen G. Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1369-1374. DOI: 10.1116/1.591387 |
0.337 |
|
| 2000 |
Finnegan N, Lee T-, Haasch RT, Greene JE, Petrov I. Epitaxial VN(001) Grown and Analyzed In situ by AES After (1) Deposition and (2) Ar+ Sputter Etching Surface Science Spectra. 7: 213-220. DOI: 10.1116/1.1367616 |
0.486 |
|
| 2000 |
Haasch RT, Lee TY, Gall D, Greene JE, Petrov I. Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers Surface Science Spectra. 7: 178-184. DOI: 10.1116/1.1367599 |
0.475 |
|
| 2000 |
Haasch RT, Lee TY, Gall D, Greene JE, Petrov I. Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of As-deposited Layers Surface Science Spectra. 7: 221-232. DOI: 10.1116/1.1367598 |
0.455 |
|
| 2000 |
Gall D, Haasch RT, Finnegan N, Lee T-, Shin C-, Sammann E, Greene JE, Petrov I. In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN Surface Science Spectra. 7: 167-168. DOI: 10.1116/1.1360984 |
0.42 |
|
| 2000 |
Finnegan N, Haasch RT, Gall D, Kodambaka S, Greene JE, Petrov I. A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN(001) After (1) UHV Cleaving and (2) Ar+ Sputter Etching Surface Science Spectra. 7: 93-100. DOI: 10.1116/1.1288178 |
0.435 |
|
| 2000 |
Gall D, D'arcy-Gall J, Greene JE. C incorporation in epitaxial Ge 1-y C y layers grown on Ge(001): An ab initio study Physical Review B. 62. DOI: 10.1103/Physrevb.62.R7723 |
0.33 |
|
| 2000 |
D’Arcy-Gall J, Gall D, Desjardins P, Petrov I, Greene JE. Role of fast sputtered particles during sputter deposition: Growth of epitaxialGe0.99C0.01/Ge(001) Physical Review B. 62: 11203-11208. DOI: 10.1103/Physrevb.62.11203 |
0.407 |
|
| 2000 |
Karr BW, Cahill DG, Petrov I, Greene JE. Effects of high-flux low-energy ion bombardment on the low-temperature growth morphology of TiN(001) epitaxial layers Physical Review B - Condensed Matter and Materials Physics. 61: 16137-16143. DOI: 10.1103/Physrevb.61.16137 |
0.459 |
|
| 2000 |
D’Arcy-Gall J, Desjardins P, Petrov I, Greene JE, Paultre J, Masut RA, Gujrathi SC, Roorda S. Epitaxial metastable Ge1−yCy (y⩽0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites Journal of Applied Physics. 88: 96-104. DOI: 10.1063/1.373629 |
0.445 |
|
| 2000 |
Madsen LD, Svedberg EB, Bergstrom DB, Petrov I, Greene JE. Texture of Al thin films deposited by magnetron sputtering onto epitaxial W(001) Journal of Applied Physics. 87: 168-171. DOI: 10.1063/1.371839 |
0.428 |
|
| 2000 |
Kim H, Glass G, Soares JANT, Desjardins P, Greene JE. Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics Journal of Applied Physics. 88: 7067-7078. DOI: 10.1063/1.1324701 |
0.501 |
|
| 2000 |
Taylor N, Kim H, Desjardins P, Foo YL, Greene JE. Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics Applied Physics Letters. 76: 2853-2855. DOI: 10.1063/1.126495 |
0.484 |
|
| 2000 |
Kodambaka S, Petrova V, Vailionis A, Desjardins P, Cahill DG, Petrov I, Greene JE. In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001) Surface Review and Letters. 7: 589-593. DOI: 10.1016/S0218-625X(00)00081-6 |
0.372 |
|
| 2000 |
Kim H, Vailionis A, Cahill DG, Greene JE. Ge(011)-c(8×10) surface structure and hydrogen desorption pathways: A temperature-programmed desorption and scanning tunneling microscopy study Surface Science. 457: 337-344. DOI: 10.1016/S0039-6028(00)00386-1 |
0.41 |
|
| 1999 |
Kim H, Greene JE. Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics Journal of Vacuum Science and Technology. 17: 354-362. DOI: 10.1116/1.581595 |
0.391 |
|
| 1999 |
Vailionis A, Glass G, Desjardins P, Cahill DG, Greene JE. Electrically active and inactive B lattice sites in ultrahighly B doped Si(000): An X-ray near-edge absorption fine-structure and high-resolution diffraction study Physical Review Letters. 82: 4464-4467. DOI: 10.1103/Physrevlett.82.4464 |
0.35 |
|
| 1999 |
Desjardins P, Spila T, Gürdal O, Taylor N, Greene JE. Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastableGe1−xSnxalloys onGe(001)2×1 Physical Review B. 60: 15993-15998. DOI: 10.1103/Physrevb.60.15993 |
0.424 |
|
| 1999 |
Gall D, Petrov I, Desjardins P, Greene JE. Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition Journal of Applied Physics. 86: 5524-5529. DOI: 10.1063/1.371555 |
0.498 |
|
| 1999 |
Chun J-, Petrov I, Greene JE. Dense fully 111-textured TiN diffusion barriers: Enhanced lifetime through microstructure control during layer growth Journal of Applied Physics. 86: 3633-3641. DOI: 10.1063/1.371271 |
0.489 |
|
| 1999 |
Taylor N, Kim H, Spila T, Eades JA, Glass G, Desjardins P, Greene JE. Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions Journal of Applied Physics. 85: 501-511. DOI: 10.1063/1.369481 |
0.492 |
|
| 1999 |
Ramanath G, Greene JE, Carlsson JRA, Allen LH, Hornback VC, Allman DJ. W deposition and titanium fluoride formation during WF6 reduction by Ti: Reaction path and mechanisms Journal of Applied Physics. 85: 1961-1969. DOI: 10.1063/1.369174 |
0.451 |
|
| 1999 |
Shin C, Gall D, Desjardins P, Vailionis A, Kim H, Petrov I, Greene JE, Odén M. Growth and physical properties of epitaxial metastable cubic TaN(001) Applied Physics Letters. 75: 3808-3810. DOI: 10.1063/1.125463 |
0.462 |
|
| 1999 |
Soares JANT, Kim H, Glass G, Desjardins P, Greene JE. Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties Applied Physics Letters. 74: 1290-1292. DOI: 10.1063/1.123527 |
0.462 |
|
| 1999 |
Williamson M, Hull R, Dunn D, Greene J, Kodambaka S. Microtextural Characterization and Orientational Mapping of Polycrystalline Thin Films Using TEM Dark Field Imaging Through an Annular Objective Aperture Microscopy and Microanalysis. 5: 218-219. DOI: 10.1017/S1431927600014410 |
0.314 |
|
| 1999 |
Svedberg EB, Sandström P, Sundgren J-, Greene JE, Madsen LD. Epitaxial growth of Ni on MgO(002)1×1: surface interaction vs. multidomain strain relief Surface Science. 429: 206-216. DOI: 10.1016/S0039-6028(99)00379-9 |
0.472 |
|
| 1998 |
Gall D, Petrov I, Madsen LD, Sundgren J-, Greene JE. Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition Journal of Vacuum Science and Technology. 16: 2411-2417. DOI: 10.1116/1.581360 |
0.493 |
|
| 1998 |
Kim H, Desjardins P, Abelson JR, Greene JE. Pathways for hydrogen desorption fromSi1−xGex(001)during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition Physical Review B. 58: 4803-4808. DOI: 10.1103/Physrevb.58.4803 |
0.466 |
|
| 1998 |
Gall D, Petrov I, Hellgren N, Hultman L, Sundgren JE, Greene JE. Growth of poly- and single-crystal ScN on MgO(001): Role of low-energy N2+ irradiation in determining texture, microstructure evolution, and mechanical properties Journal of Applied Physics. 84: 6034-6041. DOI: 10.1063/1.368913 |
0.503 |
|
| 1998 |
Kim H, Taylor N, Bramblett TR, Greene JE. Kinetics of Si1−xGex(001) growth on Si(001)2×1 by gas-source molecular-beam epitaxy from Si2H6 and Ge2H6 Journal of Applied Physics. 84: 6372-6381. DOI: 10.1063/1.368882 |
0.463 |
|
| 1998 |
Rojas-López M, Navarro-Contreras H, Desjardins P, Gurdal O, Taylor N, Carlsson JRA, Greene JE. Raman scattering from fully strained Ge1−xSnx(x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy Journal of Applied Physics. 84: 2219-2223. DOI: 10.1063/1.368286 |
0.393 |
|
| 1998 |
Kim C, Robinson IK, Spila T, Greene JE. Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation Journal of Applied Physics. 83: 7608-7612. DOI: 10.1063/1.367876 |
0.435 |
|
| 1998 |
Van Nostrand JE, Cahill DG, Petrov I, Greene JE. Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films Journal of Applied Physics. 83: 1096-1102. DOI: 10.1063/1.366799 |
0.501 |
|
| 1998 |
Gurdal O, Desjardins P, Carlsson JRA, Taylor N, Radamson HH, Sundgren J-, Greene JE. Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1 Journal of Applied Physics. 83: 162-170. DOI: 10.1063/1.366690 |
0.512 |
|
| 1998 |
Broitman E, Zheng WT, Sjöström H, Ivanov I, Greene JE, Sundgren J-. Stress development during deposition of CNx thin films Applied Physics Letters. 72: 2532-2534. DOI: 10.1063/1.121410 |
0.464 |
|
| 1998 |
Gujrathi SC, Roorda S, D'Arcy JG, Pflueger RJ, Desjardins P, Petrov I, Greene JE. Quantitative compositional depth profiling of Si1−x−yGexCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 654-660. DOI: 10.1016/S0168-583X(97)00881-1 |
0.465 |
|
| 1998 |
Münger EP, Chirita V, Sundgren J-, Greene JE. Destabilization and diffusion of two-dimensional close-packed Pt clusters on Pt(111) during film growth from the vapor phase Thin Solid Films. 318: 57-60. DOI: 10.1016/S0040-6090(97)01138-3 |
0.304 |
|
| 1997 |
Järrendahl K, Ivanov I, Sundgren JE, Radnoczi G, Czigany Z, Greene JE. Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition Journal of Materials Research. 12: 1806-1815. DOI: 10.1557/Jmr.1997.0249 |
0.501 |
|
| 1997 |
Kim H, Taylor N, Abelson JR, Greene JE. Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy Journal of Applied Physics. 82: 6062-6066. DOI: 10.1063/1.366474 |
0.493 |
|
| 1997 |
Bergstrom DB, Petrov I, Greene JE. Al/TixW1−x metal/diffusion-barrier bilayers: Interfacial reaction pathways and kinetics during annealing Journal of Applied Physics. 82: 2312-2322. DOI: 10.1063/1.366039 |
0.42 |
|
| 1997 |
Kim H, Glass G, Spila T, Taylor N, Park SY, Abelson JR, Greene JE. Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics Journal of Applied Physics. 82: 2288-2297. DOI: 10.1063/1.366036 |
0.436 |
|
| 1997 |
Bergstrom DB, Petrov I, Allen LH, Greene JE. Aluminide formation in polycrystalline Al/W metal/barrier thin-film bilayers: Reaction paths and kinetics Journal of Applied Physics. 82: 201-209. DOI: 10.1063/1.365798 |
0.477 |
|
| 1997 |
Karr BW, Petrov I, Desjardins P, Cahill DG, Greene JE. In situ scanning tunneling microscopy studies of the evolution of surface morphology and microstructure in epitaxial TiN(001) grown by ultra-high-vacuum reactive magnetron sputtering Surface and Coatings Technology. 94: 403-408. DOI: 10.1016/S0257-8972(97)00444-1 |
0.529 |
|
| 1997 |
Greene JE, Lee N-. Si(001) epitaxy from hyperthermal beams: Crystal growth, doping, and electronic properties Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 121: 58-64. DOI: 10.1016/S0168-583X(96)00369-2 |
0.51 |
|
| 1997 |
Petrov I, Losbichler P, Bergstrom D, Greene JE, Münz W-, Hurkmans T, Trinh T. Ion-assisted growth of Ti1−xAlxN/Ti1−yNbyN multilayers by combined cathodic-arc/magnetron-sputter deposition Thin Solid Films. 302: 179-192. DOI: 10.1016/S0040-6090(96)09524-7 |
0.478 |
|
| 1997 |
Glass G, Kim H, Sardela M, Lu Q, Carlsson J, Abelson J, Greene J. Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy Surface Science. 392: L63-L68. DOI: 10.1016/S0039-6028(97)00708-5 |
0.426 |
|
| 1997 |
Kim H, Taylor N, Spila T, Glass G, Park S, Greene J, Abelson J. Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption Surface Science. 380: L496-L500. DOI: 10.1016/S0039-6028(96)01587-7 |
0.373 |
|
| 1997 |
Lu Q, Sardela M, Taylor N, Glass G, Bramblett T, Spila T, Abelson J, Greene J. B incorporation and hole transport in fully strained heteroepitaxial Si1 − xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6 Journal of Crystal Growth. 179: 97-107. DOI: 10.1016/S0022-0248(97)00116-4 |
0.407 |
|
| 1996 |
Lee N, Cahill DG, Greene JE. Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates. Physical Review. B, Condensed Matter. 53: 7876-7879. PMID 9982238 DOI: 10.1103/Physrevb.53.7876 |
0.49 |
|
| 1996 |
Kim YW, Petrov I, Greene JE, Rossnagel SM. Development of 111 texture in Al films grown on SiO2/Si(001) by ultrahigh‐vacuum primary‐ion deposition Journal of Vacuum Science and Technology. 14: 346-351. DOI: 10.1116/1.579899 |
0.487 |
|
| 1996 |
Karr BW, Kim YW, Petrov I, Bergstrom DB, Cahill DG, Greene JE, Madsen LD, Sundgren J. Morphology and microstructure of epitaxial Cu(001) films grown by primary ion deposition on Si and Ge substrates Journal of Applied Physics. 80: 6699-6705. DOI: 10.1063/1.363795 |
0.472 |
|
| 1996 |
Lu Q, Sardela MR, Bramblett TR, Greene JE. B‐doped fully strained Si1−xGex layers grown on Si(001) by gas‐source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties Journal of Applied Physics. 80: 4458-4466. DOI: 10.1063/1.363407 |
0.502 |
|
| 1996 |
Lee N, Cahill DG, Greene JE. Evolution of surface roughness in epitaxial Si0.7Ge0.3(001) as a function of growth temperature (200–600 °C) and Si(001) substrate miscut Journal of Applied Physics. 80: 2199-2210. DOI: 10.1063/1.363113 |
0.514 |
|
| 1996 |
Lee N‐, Matsuoka M, Sardela MR, Tian F, Greene JE. Growth, microstructure, and strain relaxation in low‐temperature epitaxial Si1−xGex alloys deposited on Si(001) from hyperthermal beams Journal of Applied Physics. 80: 812-821. DOI: 10.1063/1.362918 |
0.518 |
|
| 1996 |
Lee N‐, Xue G, Greene JE. Epitaxial Si(001) grown at 80–750 °C by ion‐beam sputter deposition: Crystal growth, doping, and electronic properties Journal of Applied Physics. 80: 769-780. DOI: 10.1063/1.362885 |
0.51 |
|
| 1996 |
Thompson WH, Yamani Z, Abu Hassan LH, Greene JE, Nayfeh M, Hasan M. Room temperature oxidation enhancement of porous Si(001) using ultraviolet–ozone exposure Journal of Applied Physics. 80: 5415-5421. DOI: 10.1063/1.362728 |
0.331 |
|
| 1996 |
Desjardins P, Greene JE. Step‐flow epitaxial growth on two‐domain surfaces Journal of Applied Physics. 79: 1423-1434. DOI: 10.1063/1.360980 |
0.328 |
|
| 1996 |
Ramanath G, Carlsson JRA, Greene JE, Allen LH, Hornback VC, Allman DJ. Gas‐phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated circuit fabrication Applied Physics Letters. 69: 3179-3181. DOI: 10.1063/1.117953 |
0.418 |
|
| 1996 |
Kim H, Glass G, Park SY, Spila T, Taylor N, Abelson JR, Greene JE. Effects of B doping on hydrogen desorption from Si(001) during gas‐source molecular‐beam epitaxy from Si2H6 and B2H6 Applied Physics Letters. 69: 3869-3871. DOI: 10.1063/1.117132 |
0.367 |
|
| 1996 |
Kitabatake M, Greene JE. Structure of 3×2, 5×2, and 7×2 reconstructed 3C‐SiC(001) surfaces obtained during epitaxial growth: Molecular dynamics simulations Applied Physics Letters. 69: 2048-2050. DOI: 10.1063/1.116875 |
0.382 |
|
| 1996 |
Vidal MA, Ramírez‐Flores G, Navarro‐Contreras H, Lastras‐Martínez A, Powell RC, Greene JE. Refractive indices of zincblende structure β‐GaN(001) in the subband‐gap region (0.7–3.3 eV) Applied Physics Letters. 68: 441-443. DOI: 10.1063/1.116406 |
0.318 |
|
| 1996 |
Ljungcrantz H, Benhenda S, Håkansson G, Ivanov I, Hultman L, Greene JE, Sundgren J-. Ion-assisted low-temperature (≤ 150 °C) epitaxial growth of TiN on Cu by reactive magnetron sputter deposition Thin Solid Films. 287: 87-92. DOI: 10.1016/S0040-6090(96)08741-X |
0.407 |
|
| 1996 |
Salagean EE, Lewis DB, Brooks JS, Münz W-, Petrov I, Greene JE. Combined steered arc-unbalanced magnetron grown niobium coatings for decorative and corrosion resistance applications Surface & Coatings Technology. 82: 57-64. DOI: 10.1016/0257-8972(95)02639-8 |
0.351 |
|
| 1996 |
Kitabatake M, Greene JE. Molecular dynamics and quasidynamic simulations of low-energy particle bombardment effects during vapour-phase crystal growth: 10–50 eV Si and In atoms incident on (2 × 1)-terminated Si(001) Thin Solid Films. 272: 271-288. DOI: 10.1016/0040-6090(95)06953-4 |
0.454 |
|
| 1995 |
Van Nostrand JE, Chey SJ, Hasan M, Cahill DG, Greene JE. Surface morphology during multilayer epitaxial growth of Ge(001). Physical Review Letters. 74: 1127-1130. PMID 10058941 DOI: 10.1103/Physrevlett.74.1127 |
0.365 |
|
| 1995 |
Lee N‐, Powell RC, Kim Y‐, Greene JE. Molecular beam epitaxy of GaN(0001) utilizing NH3 and/or NH+x ions: Growth kinetics and defect structure Journal of Vacuum Science and Technology. 13: 2293-2302. DOI: 10.1116/1.579512 |
0.435 |
|
| 1995 |
Bergstrom DB, Petrov I, Allen LH, Greene JE. Reaction paths and kinetics of aluminide formation in Al/epitaxial-W(001) model diffusion barrier systems Journal of Applied Physics. 78: 194-203. DOI: 10.1063/1.360651 |
0.424 |
|
| 1995 |
Lu Q, Bramblett TR, Hasan M‐, Lee N‐, Greene JE. B incorporation in Ge(001) grown by gas‐source molecular‐beam epitaxy from Ge2H6 and B2H6 Journal of Applied Physics. 78: 6027-6032. DOI: 10.1063/1.360540 |
0.482 |
|
| 1995 |
Nur O, Willander M, Hultman L, Radamson HH, Hansson GV, Sardela MR, Greene JE. CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation‐induced strain relaxation, defect formation, and interlayer diffusion Journal of Applied Physics. 78: 7063-7069. DOI: 10.1063/1.360411 |
0.403 |
|
| 1995 |
Ivanov I, Hultman L, Järrendahl K, Mårtensson P, Sundgren J‐, Hjörvarsson B, Greene JE. Growth Of Epitaxial Aln(0001) On Si(111) By Reactive Magnetron Sputter-Deposition Journal of Applied Physics. 78: 5721-5726. DOI: 10.1063/1.359632 |
0.519 |
|
| 1995 |
Noël JP, Rowell NL, Greene JE. Photoluminescence from Si(001) films doped with 100-1000 eV B+ ions during deposition by molecular beam epitaxy Journal of Applied Physics. 77: 4623-4631. DOI: 10.1063/1.359428 |
0.462 |
|
| 1995 |
Bramblett TR, Lu Q, Lee N‐, Taylor N, Hasan M‐, Greene JE. Ge(001) gas‐source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening Journal of Applied Physics. 77: 1504-1513. DOI: 10.1063/1.358901 |
0.491 |
|
| 1995 |
Lu Q, Bramblett TR, Lee N‐, Hasan M‐, Karasawa T, Greene JE. B‐doped Si(001) grown by gas‐source molecular‐beam epitaxy from Si2H6 and B2H6:B incorporation and electrical properties Journal of Applied Physics. 77: 3067-3076. DOI: 10.1063/1.358658 |
0.467 |
|
| 1995 |
Bergstrom DB, Tian F, Petrov I, Moser J, Greene JE. Origin of compositional variations in sputter‐deposited TixW1−x diffusion barrier layers Applied Physics Letters. 67: 3102-3104. DOI: 10.1063/1.114878 |
0.494 |
|
| 1995 |
Gurdal O, Hasan M‐, Sardela MR, Greene JE, Radamson HH, Sundgren JE, Hansson GV. Growth of metastable Ge1−xSnx/Ge strained layer superlattices on Ge(001)2×1 by temperature‐modulated molecular beam epitaxy Applied Physics Letters. 67: 956-958. DOI: 10.1063/1.114707 |
0.454 |
|
| 1995 |
Bramblett TR, Lu Q, Karasawa T, Hasan M-, Jo SK, Greene JE. B-doped Si(001)2 × 1 gas-source molecular-beam epitaxy from Si2H6 and B2H6 Vacuum. 46: 913-916. DOI: 10.1016/0042-207X(95)00070-4 |
0.403 |
|
| 1995 |
Li G, Chang YC, Tsu R, Greene JE. Electronic structure of the Si(001)2 × 1:H surface and pathway for H2 desorption Surface Science. 330: 20-26. DOI: 10.1016/0039-6028(95)00238-3 |
0.386 |
|
| 1994 |
Kim Y‐, Moser J, Petrov I, Greene JE, Rossnagel SM. Directed sputter deposition of AlCu: Film microstructure and microchemistry Journal of Vacuum Science and Technology. 12: 3169-3175. DOI: 10.1116/1.579233 |
0.498 |
|
| 1994 |
Petrov I, Myers A, Greene JE, Abelson JR. Mass and energy resolved detection of ions and neutral sputtered species incident at the substrate during reactive magnetron sputtering of Ti in mixed Ar+N2 mixtures Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 12: 2846-2854. DOI: 10.1116/1.578955 |
0.403 |
|
| 1994 |
Xiao HZ, Lee NE, Powell RC, Ma Z, Chou LJ, Allen LH, Greene JE, Rockett A. Defect ordering in epitaxial α‐GaN(0001) Journal of Applied Physics. 76: 8195-8197. DOI: 10.1063/1.357873 |
0.459 |
|
| 1994 |
Kim Y‐, Mei DH, Lubben D, Robertson I, Greene JE. Epitaxial (GaAs)1−x(Si2)x metastable alloys on GaAs(001) and (GaAs)1−x(Si2)x /GaAs strained‐layer superlattices: Crystal growth, spinodal decomposition, and antiphase domains Journal of Applied Physics. 76: 1644-1655. DOI: 10.1063/1.357749 |
0.441 |
|
| 1994 |
Bramblett TR, Lu Q, Karasawa T, Hasan M‐, Jo SK, Greene JE. Si(001)2×1 gas‐source molecular‐beam epitaxy from Si2H6: Growth kinetics and boron doping Journal of Applied Physics. 76: 1884-1888. DOI: 10.1063/1.357712 |
0.484 |
|
| 1994 |
Lee N‐, Tomasch GA, Xue G, Markert LC, Greene JE. Crystal growth and electronic properties of ultrahigh vacuum ion‐beam sputter deposited Sb‐doped Si(001)2×1 Applied Physics Letters. 64: 1398-1400. DOI: 10.1063/1.111895 |
0.528 |
|
| 1994 |
Moser JH, Tian F, Haller O, Bergstrom DB, Petrov I, Greene JE, Wiemer C. Single-phase polycrystalline Ti1−xWxN alloys (0⩽x⩽0.7) grown by UHV reactive magnetron sputtering: microstructure and physical properties Thin Solid Films. 253: 445-450. DOI: 10.1016/0040-6090(94)90364-6 |
0.469 |
|
| 1993 |
Lin D, Miller T, Chiang T, Tsu R, Greene JE. Thermal reactions of disilane on Si(100) studied by synchrotron-radiation photoemission. Physical Review. B, Condensed Matter. 48: 11846-11850. PMID 10007524 DOI: 10.1103/Physrevb.48.11846 |
0.405 |
|
| 1993 |
Zhang XJ, Xue G, Agarwal A, Tsu R, Hasan MA, Greene JE, Rockett A. Thermal Desorption of Ultraviolet-Ozone Oxidized Ge(001) for Substrate Cleaning Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2553-2561. DOI: 10.1116/1.578606 |
0.457 |
|
| 1993 |
Adibi F, Petrov I, Greene JE, Wahlström U, Sundgren J‐. Design and characterization of a compact two‐target ultrahigh vacuum magnetron sputter deposition system: Application to the growth of epitaxial Ti1−xAlxN alloys and TiN/Ti1−xAlxN superlattices Journal of Vacuum Science and Technology. 11: 136-142. DOI: 10.1116/1.578279 |
0.461 |
|
| 1993 |
Petrov I, Mojab E, Adibi F, Greene JE, Hultman L, Sundgren J‐. Interfacial reactions in epitaxial Al/Ti1−xAlxN (0≤x≤0.2) model diffusion‐barrier structures Journal of Vacuum Science and Technology. 11: 11-17. DOI: 10.1116/1.578277 |
0.396 |
|
| 1993 |
Adibi F, Petrov I, Greene JE, Hultman L, Sundgren J‐. Effects of high‐flux low‐energy (20–100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti0.5Al0.5N alloys grown by ultra‐high‐vacuum reactive magnetron sputtering Journal of Applied Physics. 73: 8580-8589. DOI: 10.1063/1.353388 |
0.491 |
|
| 1993 |
Agarwal A, Patterson JK, Greene JE, Rockett A. Ultraviolet ozone induced oxidation of epitaxial Si1-xGe x(111) Applied Physics Letters. 63: 518-520. DOI: 10.1063/1.109991 |
0.362 |
|
| 1993 |
Sproul WD, Rudnik PJ, Legg KO, Münz W-, Petrov I, Greene JE. Reactive sputtering in the ABSTM system Surface & Coatings Technology. 56: 179-182. DOI: 10.1016/0257-8972(93)90023-H |
0.353 |
|
| 1993 |
Tomasch GA, Kim Y-, Markert LC, Lee N-, Greene JE. Growth of homoepitaxial Ge(001)2×1 by ultrahigh vacuum ion beam sputter deposition Thin Solid Films. 223: 212-217. DOI: 10.1016/0040-6090(93)90523-R |
0.484 |
|
| 1993 |
Tsu R, Lubben D, Bramblett TR, Greene JE. Si2H6 adsorption and dissociation pathways on Ge(001)2 ×1: mechanisms for heterogeneous atomic layer epitaxy Thin Solid Films. 225: 191-195. DOI: 10.1016/0040-6090(93)90154-H |
0.437 |
|
| 1993 |
Tsu R, Lubben D, Bramblett TR, Greene JE, Lin DS, Chiang TC. Adsorption and dissociation of Si2H6 on Ge(001)2 × 1 Surface Science. 280: 265-276. DOI: 10.1016/0039-6028(93)90680-I |
0.389 |
|
| 1993 |
Guinn KV, Donnelly VM, Gross ME, Baiocchi FA, Petrov I, Greene JE. Decomposition of hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane on, and diffusion of Cu into single crystal and polycrystalline titanium nitride Surface Science. 295: 219-229. DOI: 10.1016/0039-6028(93)90198-S |
0.343 |
|
| 1992 |
Kramer B, Tomasch G, Greene JE, Salvati L, Barr TL, Ray MA. High-resolution (GaAs)1-x(Ge2)x x-ray photoelectron valence-band spectra: Implications for proposed electronic and structural models. Physical Review. B, Condensed Matter. 46: 1372-1376. PMID 10003778 DOI: 10.1103/Physrevb.46.1372 |
0.381 |
|
| 1992 |
Ni W, Hansson GV, Sundgren J, Hultman L, Wallenberg LR, Yao J, Markert LC, Greene JE. delta -function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy. Physical Review. B, Condensed Matter. 46: 7551-7558. PMID 10002494 DOI: 10.1103/Physrevb.46.7551 |
0.451 |
|
| 1992 |
Lin D, Hirschorn ES, Chiang T, Tsu R, Lubben D, Greene JE. Scanning-tunneling-microscopy studies of disilane adsorption and pyrolytic growth on Si(100)-(2x1). Physical Review. B, Condensed Matter. 45: 3494-3498. PMID 10001926 DOI: 10.1103/Physrevb.45.3494 |
0.431 |
|
| 1992 |
Guinn KV, Donnelly VM, Gross ME, Baiocchi FA, Petrov I, Greene JE. Copper CVD Reactions of Cu(I)(hfae)(vtms) Adsorbed on TiN Mrs Proceedings. 282: 379. DOI: 10.1557/Proc-282-379 |
0.323 |
|
| 1992 |
Tsu R, Lin D-, Greene JE, Chiang T-. Ge Segregation and Surface Roughening During Si Growth on Ge(001)2×l by Gas-Source Molecular Beam Epitaxy from Si 2 H 6 Mrs Proceedings. 280. DOI: 10.1557/Proc-280-281 |
0.401 |
|
| 1992 |
Kitabatake M, Greene JE. Low Energy Si Bombardment Effects on Epitaxial Si Growth Mrs Proceedings. 268. DOI: 10.1557/Proc-268-211 |
0.39 |
|
| 1992 |
Petrov I, Adibi F, Greene JE, Sproul WD, Münz W‐. Use of an externally applied axial magnetic field to control ion/neutral flux ratios incident at the substrate during magnetron sputter deposition Journal of Vacuum Science and Technology. 10: 3283-3287. DOI: 10.1116/1.577812 |
0.353 |
|
| 1992 |
Lin DS, Hirschorn ES, Chiang TC, Tsu R, Lubben D, Greene JE. Scanning-tunneling-microscopy studies of disilane adsorption and pyrolytic growth on Si(100)-(2x1) Physical Review B. 45: 3494-3498. DOI: 10.1103/PhysRevB.45.3494 |
0.318 |
|
| 1992 |
Powell RC, Lee N‐, Greene JE. Growth of GaN(0001)1×1 on Al2O3(0001) by gas‐source molecular beam epitaxy Applied Physics Letters. 60: 2505-2507. DOI: 10.1063/1.106948 |
0.476 |
|
| 1992 |
Hultman L, Benhenda S, Radnoczi G, Sundgren J-, Greene JE, Petrov I. Interfacial reactions in single-crystal-TiN (100)/Al/polycrystalline-TiN multilayer thin films Thin Solid Films. 215: 152-161. DOI: 10.1016/0040-6090(92)90430-J |
0.42 |
|
| 1992 |
Kimura H, Petrov I, Adibi F, Greene JE. Growth and microstructure of epitaxial 45°-rotated bcc W layers on NaCl-structure MgO(001) substrates and TiN(001) buffer layers Journal of Crystal Growth. 123: 344-356. DOI: 10.1016/0022-0248(92)90594-9 |
0.507 |
|
| 1991 |
Lastras-Martinez A, Rodriguez-Pedroza G, Mei DH, Kramer B, Lubben D, Greene JE. Optical-reflectance anisotropy in epitaxial metastable (GaAs)1-x(Si2)x(001) alloys: A probe for the zinc-blende-to-diamond structural transition. Physical Review. B, Condensed Matter. 43: 14035-14039. PMID 9997272 DOI: 10.1103/Physrevb.43.14035 |
0.351 |
|
| 1991 |
Ni WX, Hansson GV, Sundgren JE, Markert LC, Greene JE. Experimental and Model Studies of Dopant Segregation During Growth of Silicon Films by Molecular Beam Epitaxy Mrs Proceedings. 220. DOI: 10.1557/Proc-220-91 |
0.421 |
|
| 1991 |
Carlsson J‐, Gorbatkin S, Lubben D, Greene JE. Thermodynamics of the homogeneous and heterogeneous decomposition of trimethylaluminum, monomethylaluminum, and dimethylaluminumhydride: Effects of scavengers and ultraviolet‐laser photolysis Journal of Vacuum Science & Technology B. 9: 2759-2770. DOI: 10.1116/1.585642 |
0.322 |
|
| 1991 |
Jansson U, Boman M, Markert LC, Carlsson J‐, Greene JE. Phase selective deposition of boron achieved by crystallization control Journal of Vacuum Science and Technology. 9: 266-270. DOI: 10.1116/1.577532 |
0.463 |
|
| 1991 |
Tsu R, Lubben D, Bramblett TR, Greene JE. Mechanisms of excimer laser cleaning of air-exposed Si(100) surfaces studied by Auger electron spectroscopy, electron energy-loss spectroscopy, reflection high-energy electron diffraction, and secondary-ion mass spectrometry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 223-227. DOI: 10.1116/1.577525 |
0.396 |
|
| 1991 |
Hultman L, Münz W‐, Musil J, Kadlec S, Petrov I, Greene JE. Low‐energy (∼100 eV) ion irradiation during growth of TiN deposited by reactive magnetron sputtering: Effects of ion flux on film microstructure Journal of Vacuum Science and Technology. 9: 434-438. DOI: 10.1116/1.577428 |
0.482 |
|
| 1991 |
Lubben D, Tsu R, Bramblett TR, Greene JE. Mechanisms and kinetics of Si atomic-layer epitaxy on Si(001) 2 × 1 from Si2H6 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 3003-3011. DOI: 10.1116/1.577164 |
0.506 |
|
| 1991 |
Kitabatake M, Fons P, Greene JE. Molecular dynamics and quasidynamics simulations of the annealing of bulk and near‐surface interstitials formed in molecular‐beam epitaxial Si due to low‐energy particle bombardment during deposition Journal of Vacuum Science and Technology. 9: 91-97. DOI: 10.1116/1.577136 |
0.446 |
|
| 1991 |
Hirashita N, Greene JE, Helmersson U, Birch J, Sundgren J‐. Electronic properties of epitaxial TiN/VN(001) superlattices Journal of Applied Physics. 70: 4963-4968. DOI: 10.1063/1.349044 |
0.391 |
|
| 1991 |
Adibi F, Petrov I, Hultman L, Wahlström U, Shimizu T, McIntyre D, Greene JE, Sundgren J‐. Defect structure and phase transitions in epitaxial metastable cubic Ti0.5Al0.5N alloys grown on MgO(001) by ultra‐high‐vacuum magnetron sputter deposition Journal of Applied Physics. 69: 6437-6450. DOI: 10.1063/1.348849 |
0.494 |
|
| 1991 |
Håkansson G, Hultman L, Sundgren J-, Greene JE, Münz W-. Microstructures of TiN films grown by various physical vapour deposition techniques Surface & Coatings Technology. 48: 51-67. DOI: 10.1016/0257-8972(91)90128-J |
0.473 |
|
| 1991 |
Markert LC, Greene JE, Ni W-, Hansson GV, Sundgren J-. Concentration transient analysis of antimony surface segregation during Si(001) molecular beam epitaxy Thin Solid Films. 206: 59-63. DOI: 10.1016/0040-6090(91)90393-C |
0.494 |
|
| 1991 |
Hultman L, Håkansson G, Wahlström U, Sundgren J-, Petrov I, Adibi F, Greene JE. Transmission electron microscopy studies of microstructural evolution, defect structure, and phase transitions in polycrystalline and epitaxial Ti1-xAlxN and TiN films grown by reactive magnetron sputter deposition Thin Solid Films. 205: 153-164. DOI: 10.1016/0040-6090(91)90297-B |
0.484 |
|
| 1991 |
Kitabatake M, Fons P, Greene JE. Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE Journal of Crystal Growth. 111: 870-875. DOI: 10.1016/0022-0248(91)91099-V |
0.448 |
|
| 1990 |
Myers AM, Ruzic DN, Powell RC, Maley N, Pratt DW, Greene JE, Abelson JR. Energy and mass-resolved detection of neutral and ion species using modulated-pole-bias quadrupole mass spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1668-1672. DOI: 10.1116/1.576827 |
0.303 |
|
| 1990 |
Kitabatake M, Fons P, Greene JE. Molecular dynamics simulations of low-energy particle bombardment effects during vapor-phase crystal growth: 10 eV Si atoms incident on Si(001)2×1 surfaces Journal of Vacuum Science and Technology. 8: 3726-3735. DOI: 10.1116/1.576486 |
0.435 |
|
| 1990 |
Suda Y, Lubben D, Motooka T, Greene JE. Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1 Journal of Vacuum Science and Technology. 8: 61-67. DOI: 10.1116/1.576356 |
0.368 |
|
| 1990 |
Rowell NL, Houghton DC, Noël J-, Greene JE. Effect of growth temperature on photoluminescence from ion-beam-doped molecular beam epitaxial Si:As Thin Solid Films. 184: 69-74. DOI: 10.1016/0040-6090(90)90399-X |
0.442 |
|
| 1990 |
Hasan M-, Sundgren J-, Hansson GV, Markert LC, Greene JE. Incorporation probabilities and depth distributions of aluminum co-evaporated during Si(100) molecular beam epitaxy Thin Solid Films. 184: 61-67. DOI: 10.1016/0040-6090(90)90398-W |
0.495 |
|
| 1990 |
Markert LC, Knall J, Noel J-, Hasan M-, Greene JE, Sundgren J-. Low-Energy Accelerated-Ion Doping of Si during Molecular Beam Epitaxy: Incorporation Probabilities, Depth Distributions, and Electrical Properties Nato Asi Series. Series E, Applied Sciences. 176: 313-316. DOI: 10.1007/978-94-009-1946-4_19 |
0.478 |
|
| 1990 |
Greene JE, Barnett SA, Sundgren J-, Rockett A. Low-Energy Ion/Surface Interactions during Film Growth from the Vapor Phase: Effects on Nucleation and Growth Kinetics, Defect Structure, and Elemental Incorporation Probabilities Nato Asi Series. Series E, Applied Sciences. 176: 281-311. DOI: 10.1007/978-94-009-1946-4_18 |
0.473 |
|
| 1989 |
Ni W, Knall J, Hasan MA, Hansson GV, Sundgren J, Barnett SA, Markert LC, Greene JE. Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy. Physical Review. B, Condensed Matter. 40: 10449-10459. PMID 9991593 DOI: 10.1103/Physrevb.40.10449 |
0.423 |
|
| 1989 |
Lubben D, Motooka T, Greene JE, Wendelken JF. High-resolution electron-energy-loss spectroscopy study of the uv-laser photodissociation of adsorbed Al2(CH3)6 on Si(100)21 and Si(111)77 surfaces. Physical Review. B, Condensed Matter. 39: 5245-5253. PMID 9948914 DOI: 10.1103/Physrevb.39.5245 |
0.396 |
|
| 1989 |
Greene JE, Sundgren J-. The Role of Low-Energy Ion/Surface Interactions During Crystal Growth from the Vapor Phase: Effects on Microchemistry and Microstructure Mrs Proceedings. 165. DOI: 10.1557/Proc-165-127 |
0.445 |
|
| 1989 |
Powell RC, Tomasch GA, Kim Y-, Thornton JA, Greene JE. Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan by Reactive-Ion Molecular Beam Epitaxy Mrs Proceedings. 162: 525. DOI: 10.1557/Proc-162-525 |
0.33 |
|
| 1989 |
Kitabatake M, Fons P, Greene JE. Molecular Dynamics Simulations of Low-Energy Ion/Surface Interactions During Vapor Phase Crystal Growth: 10 eV Si Incident on Si(001)2×1 Mrs Proceedings. 157. DOI: 10.1557/Proc-157-259 |
0.415 |
|
| 1989 |
Knall J, Sundgren J‐, Markert LC, Rockett A, Greene JE. Influence of the Si evaporation source on the incorporation of In during Si molecular‐beam epitaxy growth: A comparative study of magnetically and electrostatically‐focused electron‐gun evaporators Journal of Vacuum Science & Technology B. 7: 204-209. DOI: 10.1116/1.584717 |
0.43 |
|
| 1989 |
Suda Y, Lubben D, Motooka T, Greene JE. Thermal and photostimulated reactions on Si2H6‐adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic‐layer epitaxy Journal of Vacuum Science & Technology B. 7: 1171-1175. DOI: 10.1116/1.584568 |
0.417 |
|
| 1989 |
Jansson U, Carlsson J‐, Markert LC, Greene JE. Phase‐selective chemical vapor deposition of boron carbide by nucleation control on patterned substrates Journal of Vacuum Science and Technology. 7: 3172-3175. DOI: 10.1116/1.576330 |
0.412 |
|
| 1989 |
Hultman L, Sundgren J‐, Markert LC, Greene JE. Ar and excess N incorporation in epitaxial TiN films grown by reactive bias sputtering in mixed Ar/N2 and pure N2 discharges Journal of Vacuum Science and Technology. 7: 1187-1193. DOI: 10.1116/1.576251 |
0.474 |
|
| 1989 |
Hultman L, Sundgren J‐, Greene JE. Formation of polyhedral N2 bubbles during reactive sputter deposition of epitaxial TiN(100) films Journal of Applied Physics. 66: 536-544. DOI: 10.1063/1.343570 |
0.485 |
|
| 1989 |
Muranaka Y, Motooka T, Lubben D, Greene JE. Ultraviolet‐laser photolysis of disilane Journal of Applied Physics. 66: 910-914. DOI: 10.1063/1.343519 |
0.317 |
|
| 1989 |
Noël J‐, Hirashita N, Markert LC, Kim Y‐, Greene JE, Knall J, Ni W‐, Hasan MA, Sundgren J‐. Electrical properties of Si films doped with 200‐eV In+ ions during growth by molecular‐beam epitaxy Journal of Applied Physics. 65: 1189-1197. DOI: 10.1063/1.343062 |
0.502 |
|
| 1989 |
Hasan MA, Knall J, Barnett SA, Sundgren J, Markert LC, Rockett A, Greene JE. Incorporation of accelerated low‐energy (50–500 eV) In+ions in Si(100) films during growth by molecular‐beam epitaxy Journal of Applied Physics. 65: 172-179. DOI: 10.1063/1.342565 |
0.438 |
|
| 1989 |
Noël J‐, Greene JE, Rowell NL, Houghton DC. Photoluminescence studies of Si(100) doped with low-energy (100-1000 eV) B+ ions during molecular beam epitaxy Applied Physics Letters. 56: 265-267. DOI: 10.1063/1.102804 |
0.517 |
|
| 1989 |
Mei DH, Kim Y‐, Lubben D, Robertson IM, Greene JE. Growth of single‐crystal metastable (GaAs)1−x(Si2)x alloys on GaAs and (GaAs)1−x(Si2)x/GaAs strained‐layer superlattices Applied Physics Letters. 55: 2649-2651. DOI: 10.1063/1.102300 |
0.415 |
|
| 1989 |
Knall J, Sundgren J-, Markert LC, Greene JE. Incorporation of in by recoil implantation during MBE growth of Si(100) Surface Science. 214: 149-164. DOI: 10.1016/0167-2584(89)90044-3 |
0.401 |
|
| 1989 |
Sundgren J-, Knall J, Ni W-, Hasan M-, Markert LC, Greene JE. Dopant Incorporation Kinetics And Abrupt Profiles During Silicon Molecular Beam Epitaxy Thin Solid Films. 183: 281-297. DOI: 10.1016/0040-6090(89)90453-7 |
0.46 |
|
| 1989 |
Knall J, Barnett S, Sundgren J, Greene J. Adsorption and desorption kinetics of In on Si(100) Surface Science. 209: 314-334. DOI: 10.1016/0039-6028(89)90078-2 |
0.413 |
|
| 1989 |
Barnett SA, Greene JE, Sundgren J-. Ion-beam doping during molecular beam epitaxy Jom. 41: 16-19. DOI: 10.1007/Bf03220192 |
0.308 |
|
| 1988 |
McGlinn TC, Klein MV, Romano LT, Greene JE. Raman-scattering and electron-microscopy study of composition-dependent ordering in metastable (AIIIBV)1-x(CIII2)x alloys. Physical Review. B, Condensed Matter. 38: 3362-3367. PMID 9946678 DOI: 10.1103/Physrevb.38.3362 |
0.309 |
|
| 1988 |
Motooka T, Fons P, Greene JE. Electronic Structure of Adsorbed Trimethylaluminum on Clean Si(100) Surfaces Mrs Proceedings. 131: 345. DOI: 10.1557/Proc-131-345 |
0.363 |
|
| 1988 |
Motooka T, Rockett A, Fons P, Greene JE, Salaneck WR, Bergman R, Sundgren JE. Determination of the valence electronic structure of condensed trimethylaluminum by photoelectron spectroscopy and molecular‐orbital calculations Journal of Vacuum Science and Technology. 6: 3115-3119. DOI: 10.1116/1.575484 |
0.312 |
|
| 1988 |
Kramer B, Tomasch G, Ray M, Greene JE, Salvati L, Barr TL. Summary Abstract: A high‐resolution x‐ray photoelectron spectroscopy study of the valence‐band structure of single‐crystal metastable (GaAs)(1−x)(Ge2)x Journal of Vacuum Science and Technology. 6: 1572-1574. DOI: 10.1116/1.575328 |
0.344 |
|
| 1988 |
McIntyre D, Sundgren J‐, Greene JE. Summary Abstract: Metastable face‐centered‐cubic Cu1−xCrx alloys (0Journal of Vacuum Science and Technology. 6: 1708-1709. DOI: 10.1116/1.575317 |
0.408 |
|
| 1988 |
Ray MA, Baker JE, Loxton CM, Greene JE. Quantitative analysis and depth profiling of rare gases in solids by secondary-ion mass spectrometry: Detection of (csr)+ molecular ions (r = rare gas) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 44-50. DOI: 10.1116/1.574966 |
0.359 |
|
| 1988 |
Fons P, Hirashita N, Markert LC, Kim Y‐, Greene JE, Ni W‐, Knall J, Hansson GV, Sundgren J‐. Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy Applied Physics Letters. 53: 1732-1734. DOI: 10.1063/1.99809 |
0.5 |
|
| 1988 |
McIntyre D, Sundgren J‐, Greene JE. Growth, structure, and physical properties of single‐phase metastable fcc Cu1−xCrx solid solutions Journal of Applied Physics. 64: 3689-3696. DOI: 10.1063/1.341412 |
0.411 |
|
| 1988 |
Rockett A, Greene JE, Jiang H, Östling M, Petersson CS. Dopant redistribution during the solid-phase growth of CrSi2 on Si(100) Journal of Applied Physics. 64: 4187-4193. DOI: 10.1063/1.341333 |
0.425 |
|
| 1988 |
Hultman L, Johansson B‐, Sundgren J‐, Markert LC, Greene JE. Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges Applied Physics Letters. 53: 1175-1177. DOI: 10.1063/1.100014 |
0.489 |
|
| 1988 |
Salaneck WR, Bergman R, Sundgren J-, Rockett A, Motooka T, Greene JE. Adsorption of tri-methyl aluminum molecules on silicon Surface Science. 198: 461-472. DOI: 10.1016/0039-6028(88)90378-0 |
0.415 |
|
| 1988 |
Shah S, Greene J, Abels L, Raccah P. Epitaxial metastable (GaSb)1-x(Ge(2-y)Sn2y)x quarternary alloys on GaAs(100): 1085 Crystal growth, structure, and raman scattering Journal of Crystal Growth. 91: 71-80. DOI: 10.1016/0022-0248(88)90369-7 |
0.623 |
|
| 1988 |
Hultman L, Barnett S, Sundgren J, Greene J. Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition Journal of Crystal Growth. 92: 639-656. DOI: 10.1016/0022-0248(88)90048-6 |
0.448 |
|
| 1987 |
Kahn AD, Eades JA, Romano LT, Shah SI, Greene JE. Ion-channeling studies of the structural phase transition in (GaSb)1-x(Ge2)x alloys. Physical Review Letters. 58: 682-685. PMID 10035008 DOI: 10.1103/Physrevlett.58.682 |
0.574 |
|
| 1987 |
Rich DH, Samsavar A, Miller T, Lin HF, Chiang T, Sundgren J, Greene JE. Coordination determination of In on Si(100) from synchrotron photoemission studies. Physical Review Letters. 58: 579-582. PMID 10034977 DOI: 10.1103/Physrevlett.58.579 |
0.4 |
|
| 1987 |
Romano LT, Robertson IM, Greene JE, Sundgren JE. Domain structure in epitaxial metastable zinc-blende (GaAs)1-x(Ge2)x(001) alloys. Physical Review. B, Condensed Matter. 36: 7523-7528. PMID 9942520 DOI: 10.1103/Physrevb.36.7523 |
0.415 |
|
| 1987 |
Hirashita N, Noel J-, Rockett A, Markert L, Greene JE, flasan MA, Knall J, Ni W-, Sundgren J-. Indium Ion Doping During Si Molecular Beam Epitaxy Mrs Proceedings. 93: 3. DOI: 10.1557/Proc-93-3 |
0.372 |
|
| 1987 |
Lubben D, Motooka T, Greene JE, Wendelken JF, Sundgren J-, Salaneck WR. Xps, Ups, and Hreels Studies of Excimer-Laser-Induced Dissociation of Al2(Ch3) Adsorbed on Si(100) Surfaces Mrs Proceedings. 101. DOI: 10.1557/Proc-101-151 |
0.317 |
|
| 1987 |
Eres D, Motooka T, Gorbatkin S, Lubben D, Greene JE. Time‐resolved spectroscopic studies of the ultraviolet‐laser photolysis of Al alkyls for film growth Journal of Vacuum Science & Technology B. 5: 848-852. DOI: 10.1116/1.583678 |
0.332 |
|
| 1987 |
Hultman L, Sundqren JE, Helmersson U, Greene JE, Barnett SA. Summary Abstract: The role of low-energy ion bombardment during the growth of epitaxial TiN(100) films by reactive magnetron sputtering: Defect formation and annihilation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 2162-2164. DOI: 10.1116/1.574946 |
0.445 |
|
| 1987 |
Hasan MA, Sundgren JE, Barnett SA, Greene JE. Nucleation and initial growth of in deposited on using low-enrgy (300 ev) accelerated beams in ultrahigh vacuum Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1883-1887. DOI: 10.1116/1.574478 |
0.449 |
|
| 1987 |
Hultman L, Helmersson U, Barnett SA, Sundgren J, Greene JE. Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering Journal of Applied Physics. 61: 552-555. DOI: 10.1063/1.338257 |
0.485 |
|
| 1987 |
Greene J, Motooka T, Sundgren J, Lubben D, Gorbatkin S, Barnett S. The role of ion/surface interactions and photo-induced reactions during film growth from the vapor phase Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 27: 226-242. DOI: 10.1016/0168-583X(87)90024-3 |
0.449 |
|
| 1987 |
Håkansson G, Sundgren J-, McIntyre D, Greene JE, Münz W-. Microstructure and physical properties of polycrystalline metastable Ti0.5Al0.5N alloys grown by d.c. magnetron sputter deposition Thin Solid Films. 153: 55-65. DOI: 10.1016/0040-6090(87)90169-6 |
0.502 |
|
| 1987 |
Barnett S, Winters H, Greene J. Influence of ion bombardment on the interaction of Sb with the Si(100) surface Surface Science. 181: 596-603. DOI: 10.1016/0039-6028(87)90208-1 |
0.385 |
|
| 1987 |
Shah SI, Greene JE, Abels LL, Yao Q, Raccah PM. Growth of single-crystal metastable Ge1-xSnx alloys on Ge(100) and GaAs(100) substrates Journal of Crystal Growth. 83: 3-10. DOI: 10.1016/0022-0248(87)90495-7 |
0.494 |
|
| 1986 |
McGlinn TC, Krabach TN, Klein MV, Bajor G, Greene JE, Kramer B, Barnett SA, Lastras A, Gorbatkin S. Raman scattering and optical-absorption studies of the metastable alloy system GaAsxSb1-x. Physical Review. B, Condensed Matter. 33: 8396-8401. PMID 9938235 DOI: 10.1103/Physrevb.33.8396 |
0.328 |
|
| 1986 |
Greene JE, Rocketr A, Sundgren J-. The Role of Low-Energy Ion/Surface Interactions During Crystal Growth From the Vapor Phase Mrs Proceedings. 75: 39. DOI: 10.1557/Proc-75-39 |
0.338 |
|
| 1986 |
Rockett A, Knall J, Hassan MA, Sundgren J, Barnett SA, Greene JE. Summary Abstract: Thermal and accelerated (≤200 eV) In doping of Si(100) layers during molecular beam epitaxy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 900-901. DOI: 10.1116/1.574002 |
0.388 |
|
| 1986 |
Helmersson U, Sundgren J‐, Greene JE. Microstructure evolution in TiN films reactively sputter deposited on multiphase substrates Journal of Vacuum Science and Technology. 4: 500-503. DOI: 10.1116/1.573868 |
0.491 |
|
| 1986 |
Sundgren J‐, Rockett A, Greene JE, Helmersson U. Microstructural and microchemical characterization of hard coatings Journal of Vacuum Science and Technology. 4: 2770-2783. DOI: 10.1116/1.573678 |
0.307 |
|
| 1986 |
Motooka T, Gorbatkin S, Lubben D, Eres D, Greene JE. Mechanisms of Al film growth by ultraviolet laser photolysis of trimethylaluminum Journal of Vacuum Science and Technology. 4: 3146-3152. DOI: 10.1116/1.573644 |
0.372 |
|
| 1986 |
Rockett A, Klem J, Barnett SA, Greene JE, Morkoç H. Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular‐beam epitaxy Journal of Applied Physics. 59: 2777-2783. DOI: 10.1063/1.336987 |
0.499 |
|
| 1986 |
Shah SI, Kramer B, Barnett SA, Greene JE. Direct evidence for an order/disorder phase transition atx≂0.3 in single‐crystal metastable (GaSb)(1−x)(Ge2)xalloys: High‐resolution x‐ray diffraction measurements Journal of Applied Physics. 59: 1482-1487. DOI: 10.1063/1.336503 |
0.35 |
|
| 1986 |
Romano L, Sundgren J, Barnett S, Greene J. Metastable (GaSb)(1−x)(Sn2)x alloys: Crystal growth and phase stability of single crystal and polycrystalline layers Superlattices and Microstructures. 2: 233-241. DOI: 10.1016/0749-6036(86)90025-X |
0.468 |
|
| 1986 |
Hasan MA, Knall J, Barnett SA, Sundgren JE, Rockett A, Greene JE. Accelerated-Ion Beam Doping During Si Growth By Molecular Beam Epitaxy And Ion-Enchanced In Film Deposition Using A Low-Energy (40-300 Ev) In Ion Source. Vacuum. 36: 1017-1018. DOI: 10.1016/0042-207X(86)90158-2 |
0.415 |
|
| 1986 |
Barnett S, Winters HF, Greene J. The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studies Surface Science. 165: 303-326. DOI: 10.1016/0039-6028(86)90809-5 |
0.421 |
|
| 1986 |
Knall J, Sundgren J-, Hansson GV, Greene JE. Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth Surface Science. 166: 512-538. DOI: 10.1016/0039-6028(86)90694-1 |
0.482 |
|
| 1986 |
Greene J, Motooka T, Sundgren J, Rockett A, Gorbatkin S, Lubben D, Barnett S. A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth Journal of Crystal Growth. 79: 19-32. DOI: 10.1016/0022-0248(86)90411-2 |
0.439 |
|
| 1985 |
Rockett A, Knall J, Barnett SA, Sundgren JE, Greene JE. Dopant depth distributions as a function of growth temperature in In-doped (100)Si grown by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 855-859. DOI: 10.1116/1.573330 |
0.548 |
|
| 1985 |
Wickersham CE, Bajor G, Greene JE. Temperature dependent formation of surface undulations in explosively crystallized films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 336-338. DOI: 10.1116/1.573261 |
0.423 |
|
| 1985 |
Motooka T, Gorbatkin S, Lubben D, Greene JE. UV‐laser photolysis of trimethylaluminum for Al film growth Journal of Applied Physics. 58: 4397-4401. DOI: 10.1063/1.335530 |
0.316 |
|
| 1985 |
Greene JE, Barnett SA, Rockett A, Bajor G. Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques Applications of Surface Science. 22: 520-544. DOI: 10.1016/0378-5963(85)90184-9 |
0.483 |
|
| 1985 |
Barnett SA, Greene JE. Si molecular beam Epitaxy: A model for temperature dependent incorporation probabilities and depth distributions of dopants exhibiting strong surface segregation Surface Science. 151: 67-90. DOI: 10.1016/0039-6028(85)90455-8 |
0.469 |
|
| 1984 |
Barnett SA, Kramer B, Romano LT, Shah SI, Ray MA, Fang S, Greene JE. A Review of Recent Results on Single Crystal Metastable Semiconducfors: Crystal Growth, Phase Stability, and Physical Properties Mrs Proceedings. 37. DOI: 10.1557/Proc-37-285 |
0.439 |
|
| 1984 |
Rockett A, Barnett SA, Greene JE. LOW-ENERGY, ULTRAHIGH VACUUM, SOLID-METAL ION SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR BEAM EPITAXY Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2: 306-313. DOI: 10.1116/1.582814 |
0.352 |
|
| 1984 |
Barnett SA, Rockett A, Bajor G, Greene JE. Summary Abstract: Model calculations for thermal and accelerated beam doping in semiconductor films grown by molecular beam epitaxy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 2: 406-407. DOI: 10.1116/1.572753 |
0.371 |
|
| 1984 |
Knall J, Sundgren J, Greene JE, Rockett A, Barnett SA. Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction Applied Physics Letters. 45: 689-691. DOI: 10.1063/1.95358 |
0.49 |
|
| 1984 |
Cadien KC, Muddle BC, Greene JE. Phase transformations in ion-mixed metastable (GaSb)1-x(Ge2)x semiconducting alloys Journal of Applied Physics. 55: 4177-4186. DOI: 10.1063/1.333036 |
0.433 |
|
| 1984 |
Shah SI, Greene JE. Growth and physical properties of amorphous and single crystal ZnGeAs2 layers deposited on (100)GaAs by sputter deposition in excess Zn and As4 Journal of Crystal Growth. 68: 537-544. DOI: 10.1016/0022-0248(84)90461-5 |
0.479 |
|
| 1983 |
Wickersham CE, Bajor G, Greene JE. Optical information storage using explosive crystallization in amorphous films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 1857-1860. DOI: 10.1116/1.572228 |
0.376 |
|
| 1983 |
Ray MA, Greene JE, Polack AJ, Welsh LB. Summary Abstract: Rf-sputter-deposited multilayer thin film oxygen sensors Journal of Vacuum Science and Technology. 1: 322-322. DOI: 10.1116/1.572123 |
0.369 |
|
| 1983 |
Shin SM, Ray MA, Rigsbee JM, Greene JE, Barnett SA. Summary abstract: Growth of metastable Cu1-xCrx solid solutions by ion mixing during deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 537-538. DOI: 10.1116/1.571926 |
0.316 |
|
| 1983 |
Greene JE. Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2 Critical Reviews in Solid State and Materials Sciences. 11: 47-97. DOI: 10.1080/01611598308243645 |
0.396 |
|
| 1983 |
Shin SM, Ray MA, Rigsbee JM, Greene JE. Growth of metastable Cu1-xCrx solid solutions by ion mixing during bias-sputter deposition Applied Physics Letters. 43: 249-251. DOI: 10.1063/1.94315 |
0.464 |
|
| 1983 |
Barnett SA, Greene JE. Mechanisms of epitaxial GaAs crystal growth by sputter deposition: Role of ion/surface interactions Surface Science. 128: 401-416. DOI: 10.1016/S0039-6028(83)80040-5 |
0.48 |
|
| 1982 |
Greene JE, Barnett SA. ION-SURFACE INTERACTIONS DURING VAPOR PHASE CRYSTAL GROWTH BY SPUTTERING, MBE, AND PLASMA ENHANCED CVD: APPLICATIONS TO SEMICONDUCTORS . 311-320. DOI: 10.1116/1.571767 |
0.458 |
|
| 1982 |
Cadien KC, Ray MA, Shin SM, Rigsbee JM, Barnett SA, Greene JE. Summary Abstract: Ion mixing during film deposition: Growth of metastable semiconducting and metallic alloys Journal of Vacuum Science and Technology. 20: 370-371. DOI: 10.1116/1.571468 |
0.428 |
|
| 1982 |
Andreatta RW, Lubben D, Eden JG, Greene JE. Summary Abstract: Growth of Si and Ge thin films by laser‐induced chemical vapor deposition Journal of Vacuum Science and Technology. 20: 740-741. DOI: 10.1116/1.571446 |
0.476 |
|
| 1982 |
Bajor G, Cadien KC, Ray MA, Greene JE, Vijayakumar PS. Growth of high quality epitaxial Ge films on (100)Si by sputter deposition Applied Physics Letters. 40: 696-698. DOI: 10.1063/1.93239 |
0.526 |
|
| 1982 |
Andreatta RW, Abele CC, Osmundsen JF, Eden JG, Lubben D, Greene JE. Low‐temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane Applied Physics Letters. 40: 183-185. DOI: 10.1063/1.93001 |
0.477 |
|
| 1982 |
Greene JE, Cadien KC, Lubben D, Hawkins GA, Erikson GR, Clarke JR. EPITAXIAL Ge/GaAs HETEROSTRUCTURES BY SCANNED CW LASER ANNEALING OF a-GE LAYERS ON GaAs Materials Research Society Symposia Proceedings. 4: 701-706. DOI: 10.1063/1.92690 |
0.462 |
|
| 1982 |
Rockett A, Drummond TJ, Greene JE, Morkoc H. Surface segregation model for Sn‐doped GaAs grown by molecular beam epitaxy Journal of Applied Physics. 53: 7085-7087. DOI: 10.1063/1.330013 |
0.429 |
|
| 1982 |
Barnett S, Ray M, Lastras A, Kramer B, Greene J, Raccah P, Abels L. Growth and optical properties of single-crystal metastable (GaAs)1−xGex alloys Electronics Letters. 18: 891. DOI: 10.1049/El:19820604 |
0.375 |
|
| 1982 |
Pan A, Greene JE. Interfacial chemistry effects on the adhesion of sputter-deposited TiC films to steel substrates Thin Solid Films. 97: 79-89. DOI: 10.1016/0040-6090(82)90419-9 |
0.414 |
|
| 1982 |
Arthur J, Bunshah R, Call P, Greene J, Lagally M, Mattox D, Peercy P, O'Gallagher J, Pawlewicz W, Seraphin B, Woodall J. Basic research needs and opportunities in thin films and coatings Materials Science and Engineering. 53: 137-148. DOI: 10.1016/0025-5416(82)90018-0 |
0.382 |
|
| 1982 |
Greene JE, Barnett SA, Cadien KC, Ray MA. Growth of single crystal GaAs and metastable (GaSb)1-xGexAlloys by sputter deposition: Ion-surface interaction effects Journal of Crystal Growth. 56: 389-401. DOI: 10.1016/0022-0248(82)90458-4 |
0.526 |
|
| 1981 |
Greene JE, Cadien KC, Lubben D, Hawkins GA, Erikson GR, Clarke JR. Epitaxial Ge/GaAs Heterostructures by Scanned CW Laser Annealing of a-GE Layers on GaAS Mrs Proceedings. 4. DOI: 10.1557/Proc-4-701 |
0.477 |
|
| 1981 |
Barnett SA, Bajor G, Greene JE. Summary Abstract: Growth of high quality epitaxial GaAs films by sputter deposition Journal of Vacuum Science and Technology. 18: 906-907. DOI: 10.1116/1.570991 |
0.443 |
|
| 1981 |
Cadien KC, Eltoukhy AH, Greene JE. Growth of single-crystal metastable semiconducting (GaSb)1-xGex films Applied Physics Letters. 38: 773-775. DOI: 10.1063/1.92158 |
0.498 |
|
| 1981 |
Cadien K, Eltoukhy A, Greene J. Growth and thermal stability of single crystal metastable semiconducting (GaSb),1−xGex films Vacuum. 31: 253-258. DOI: 10.1016/S0042-207X(81)80177-7 |
0.471 |
|
| 1981 |
Pan A, Greene JE. Residual compressive stress in sputter-deposited TiC films on steel substrates Thin Solid Films. 78: 25-34. DOI: 10.1016/0040-6090(81)90414-4 |
0.43 |
|
| 1981 |
Rivaud L, Ward ID, Eltoukhy AH, Greene JE. Enhanced diffusion and precipitation in Cu: In alloys due to low energy ion bombardment Surface Science. 102: 610-617. DOI: 10.1016/0039-6028(81)90049-2 |
0.379 |
|
| 1980 |
Zilko JL, Barnett SA, Eltoukhy AH, Greene JE. Modification of elemental incorporation probabilities by ion bombardment during growth of III–V compound and metastable films Journal of Vacuum Science and Technology. 17: 595-602. DOI: 10.1116/1.570521 |
0.461 |
|
| 1980 |
Barnett SA, Bajor G, Greene JE. Growth of high-quality epitaxial GaAs films by sputter deposition Applied Physics Letters. 37: 734-737. DOI: 10.1063/1.92063 |
0.48 |
|
| 1980 |
Clarke JR, Greene JE. Reactively evaporated photoconductive PbO: Phase transformations induced by water vapor Thin Solid Films. 66: 339-349. DOI: 10.1016/0040-6090(80)90387-9 |
0.459 |
|
| 1980 |
Natarajan BR, Eltoukhy AH, Greene JE, Barr TL. Mechanisms of reactive sputtering of indium II: Growth of indium oxynitride in mixed N2-O2 discharges Thin Solid Films. 69: 217-227. DOI: 10.1016/0040-6090(80)90038-3 |
0.463 |
|
| 1980 |
Natarajan BR, Eltoukhy AH, Greene JE, Barr TL. Mechanisms of reactive sputtering of indium I: Growth of InN in mixed Ar-N2 discharges Thin Solid Films. 69: 201-216. DOI: 10.1016/0040-6090(80)90037-1 |
0.435 |
|
| 1979 |
Cadien KC, Zilko JL, Eltoukhy AH, Greene JE. GROWTH OF SINGLE-CRYSTAL METASTABLE InSb//1// minus //xBi//x AND (GaSb)//1// minus //xGe//x SEMICONDUCTING FILMS Journal of Vacuum Science &Amp; Technology. 17: 441-444. DOI: 10.1116/1.570477 |
0.412 |
|
| 1979 |
Barr TL, Natarajan BR, Eltoukhy AH, Greene JE. Abstract: Characterization of InN, In2O3, and In oxy‐nitride semiconducting thin films using XPS electron energy loss spectra Journal of Vacuum Science and Technology. 16: 517-517. DOI: 10.1116/1.570024 |
0.383 |
|
| 1979 |
Eltoukhy AH, Barnett SA, Greene JE. Ion bombardment effects on elemental incorporation probabilities during sputter deposition of GaSb and InSb Journal of Vacuum Science and Technology. 16: 321-323. DOI: 10.1116/1.569938 |
0.455 |
|
| 1979 |
Bajor G, Barnett S, Klinger R, Greene J. Determination of concentrations and ionization energies of imperfections in degenerate InSb films Thin Solid Films. 59: 183-192. DOI: 10.1016/0040-6090(79)90292-X |
0.417 |
|
| 1978 |
Barr TL, Welsh LB, Szofran FR, Greene JE, Klinger RE. Abstract: Surface studies of Y2O3 doped CeO2 and ZrO2 thin films Journal of Vacuum Science and Technology. 15: 341-342. DOI: 10.1116/1.569542 |
0.418 |
|
| 1978 |
Greene JE, Zilko JL. The nature of the transition region formed between dc-bases rf sputtered TiC films and steel substrates Surface Science. 72: 109-124. DOI: 10.1016/0039-6028(78)90382-5 |
0.467 |
|
| 1977 |
Clarke JR, Weiss AK, Donovan JL, Greene JE, Klinger RE. Ion-plated lead oxide, an x-ray sensitive photoconductor Journal of Vacuum Science and Technology. 14: 219-222. DOI: 10.1116/1.569125 |
0.438 |
|
| 1977 |
Greene JE, Wickersham CE, Zilko JL. Abstract: Epitaxial growth of In1−xGaxSb thin films by multitarget rf sputtering Journal of Vacuum Science and Technology. 14: 114-114. DOI: 10.1116/1.569098 |
0.436 |
|
| 1977 |
Eltoukhy AH, Zilko JL, Wickersham CE, Greene JE. Interlayer diffusion in InSb/GaSb superlattice structure grown by multitarget rf sputtering Applied Physics Letters. 31: 156-158. DOI: 10.1063/1.89636 |
0.47 |
|
| 1976 |
Greene JE, Mei L. High temperature metal-induced crystallization of r.f. sputtered amorphous Si thin films Thin Solid Films. 37: 429-440. DOI: 10.1016/0040-6090(76)90611-8 |
0.479 |
|
| 1976 |
Greene JE, Pestes M. Adhesion of sputter-deposited carbide films to steel substrates Thin Solid Films. 37: 373-385. DOI: 10.1016/0040-6090(76)90607-6 |
0.462 |
|
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