Gaurav Verma, Ph.D. - Publications
Affiliations: | 2004 | Stanford University, Palo Alto, CA |
Area:
Electronics and Electrical Engineering, Optics PhysicsYear | Citation | Score | |||
---|---|---|---|---|---|
2002 | Verma G, Gelatos C, Talwar S, Bravman JC. Formation of titanium silicide on narrow gates using laser thermal processing Ieee Transactions On Electron Devices. 49: 42-47. DOI: 10.1109/16.974747 | 0.385 | |||
2001 | Verma G, Talwar S, Bravman JC. Creating process margin in laser thermal processing: Application to formation of titanium silicide Applied Physics Letters. 78: 925-927. DOI: 10.1063/1.1347389 | 0.364 | |||
2000 | Verma G, Talwar S, Bravman JC. Differential thermal budget in laser processing: Application to formation of titanium silicide Ieee Electron Device Letters. 21: 482-484. DOI: 10.1109/55.870608 | 0.365 | |||
1997 | Shamma N, Talwar S, Verma G, Kramer K, Farrar N, Chi C, Greene W, Weiner K. Laser-Assisted TiSi 2 Formation for ULSI Applications Mrs Proceedings. 470: 265. DOI: 10.1557/Proc-470-265 | 0.361 | |||
1996 | Verma G, Talwar S, Sigmon TW. Formation and control of phosphorus buried layers in silicon using a pulsed XeCl excimer laser Applied Physics Letters. 69: 319-321. DOI: 10.1063/1.118046 | 0.385 | |||
1995 | Verma G, Slaoui A, Talwar S, Sigmon TW. Formation and Control of Boron Buried Layers in Silicon Using an Excimer Laser Ieee Electron Device Letters. 16: 14-16. DOI: 10.1109/55.363214 | 0.347 | |||
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