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William G. Oldham - Publications

Affiliations: 
University of California, Berkeley, Berkeley, CA, United States 
Area:
Electronics and Electrical Engineering
Website:
https://www2.eecs.berkeley.edu/Faculty/Homepages/oldham.html
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48 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Oldham WG, Shroff Y. Mirror-based pattern generation for maskless lithography Microelectronic Engineering. 73: 42-47. DOI: 10.1016/J.Mee.2004.02.013  0.723
2001 Shroff Y, Chen Y, Oldham W. Fabrication of parallel-plate nanomirror arrays for extreme ultraviolet maskless lithography Journal of Vacuum Science & Technology B. 19: 2412-2415. DOI: 10.1116/1.1417544  0.708
1999 Choksi N, Pickard DS, McCord M, Pease RFW, Shroff Y, Chen Y, Oldham W, Markle D. Maskless extreme ultraviolet lithography Journal of Vacuum Science & Technology B. 17: 3047-3051. DOI: 10.1116/1.590952  0.702
1996 Schenker R, Oldham W. Effects of compaction on 193 nm lithographic system performance Journal of Vacuum Science & Technology B. 14: 3709-3713. DOI: 10.1116/1.588653  0.345
1996 Fields CH, Oldham WG, Ray‐Chaudhuri AK, Krenz KD, Stulen RH. Direct aerial image measurements to evaluate the performance of an extreme ultraviolet projection lithography system Journal of Vacuum Science & Technology B. 14: 4000-4003. DOI: 10.1116/1.588631  0.331
1996 Bokor J, Neureuther AR, Oldham WG. Advanced lithography for ULSI Ieee Circuits and Devices Magazine. 12: 11-15. DOI: 10.1109/101.481203  0.307
1995 Shih YC, Zhang G, Hu C, Oldham WG. Thin dielectric degradation during silicon selective epitaxial growth process Applied Physics Letters. 67: 2040-2042. DOI: 10.1063/1.115071  0.338
1994 Shih Y, Lou J, Oldham WG. Seam line defects in silicon‐on‐insulator by merged epitaxial lateral overgrowth Applied Physics Letters. 65: 1638-1640. DOI: 10.1063/1.112935  0.324
1993 Shacham‐Diamand Y, Dedhia A, Hoffstetter D, Oldham WG. Copper transport in thermal SiO2 Journal of the Electrochemical Society. 140: 2427-2432. DOI: 10.1149/1.2220837  0.338
1993 Partlo WN, Fields CH, Oldham WG. Direct aerial image measurement as a method of testing high numerical aperture microlithographic lenses Journal of Vacuum Science & Technology B. 11: 2686-2691. DOI: 10.1116/1.586585  0.327
1992 Pfau AK, Partlo WN, Hsu R, Oldham WG. Quartz inhomogeneity effects in diffraction-limited deep ultraviolet imaging. Applied Optics. 31: 6658-61. PMID 20733893 DOI: 10.1364/Ao.31.006658  0.361
1992 Galewski C, Oldham WG. A Hot‐Wall Low‐Pressure Reactor for Selective Silicon Epitaxy: Reactor Design and Experimental Results Journal of the Electrochemical Society. 139: 543-548. DOI: 10.1149/1.2069253  0.318
1992 Galewski C, Oldham WG. Modeling of a high throughput hot-wall reactor for selective epitaxial growth of silicon Ieee Transactions On Semiconductor Manufacturing. 5: 169-179. DOI: 10.1109/66.149810  0.309
1992 Lou J, Oldham WG, Kawayoshi H, Ling P. Plasma etch effects on low‐temperature selective epitaxial growth of silicon Journal of Applied Physics. 71: 3225-3230. DOI: 10.1063/1.350968  0.357
1992 Lou J, Oldham WG, Kawayoshi H, Ling P. Fluorine ion induced enhancement of oxide removal prior to silicon epitaxial growth Applied Physics Letters. 60: 1232-1234. DOI: 10.1063/1.107415  0.319
1991 Lou J, Oldham WG, Kawayoshi H, Ling P. The Selective Epitaxy of Silicon at Low Temperatures Mrs Proceedings. 220: 353. DOI: 10.1557/Proc-220-353  0.317
1991 Lou J, Oldham WG, Kawayoshi H, Ling P. The surface morphology of selectively grown epitaxial silicon Journal of Applied Physics. 70: 685-692. DOI: 10.1063/1.349648  0.316
1991 Lou J, Galewski C, Oldham WG. Dichlorosilane effects on low‐temperature selective silicon epitaxy Applied Physics Letters. 58: 59-61. DOI: 10.1063/1.104444  0.351
1990 Galewski CJ, Lou J-, Oldham WG. Silicon wafer preparation for low-temperature selective epitaxial growth Ieee Transactions On Semiconductor Manufacturing. 3: 93-98. DOI: 10.1109/66.56566  0.323
1988 Pai PL, Oldham WG. A liftoff process using edge detection (LOPED) Ieee Transactions On Semiconductor Manufacturing. 1: 3-9. DOI: 10.1109/66.4366  0.303
1987 Shacham-Diamand Y, Chuh T, Oldham WG. The electrical properties of Hg-sensitized ``photox''-oxide layers deposited at 80°C Solid-State Electronics. 30: 227-233. DOI: 10.1016/0038-1101(87)90155-9  0.336
1986 Leung W, Neureuther AR, Oldham WG. Inorganic Resist Phenomena and Their Applications to Projection Lithography Ieee Transactions On Electron Devices. 33: 173-181. DOI: 10.1109/T-Ed.1986.22461  0.365
1985 Leung W, Neureuther AR, Oldham WG. Proximity effects and printability of defects in GexSe1−x resist Journal of Vacuum Science & Technology B. 3: 310-313. DOI: 10.1116/1.583252  0.306
1985 Wong SS, Oldham WG. Anodic nitridation of silicon and silicon dioxide Ieee Transactions On Electron Devices. 32: 978-982. DOI: 10.1109/T-Ed.1985.22056  0.428
1985 Oldham WG, Shacham-Diamand Y, Pai PL, Young K, Sutardja P. MOS isolation technology Physica B-Condensed Matter. 129: 53-65. DOI: 10.1016/0378-4363(85)90554-6  0.316
1984 Wong SS, Oldham WG. A Multiwafer Plasma System for Anodic Nitridation and Oxidation Ieee Electron Device Letters. 5: 175-177. DOI: 10.1109/Edl.1984.25874  0.395
1983 Antognetti P, Fasce C, Oldham W. Process Parameter Control in Optical Lithography Japanese Journal of Applied Physics. 22: 171. DOI: 10.7567/Jjaps.22S1.171  0.324
1983 Wong SS, Sodini CG, Ekstedt TW, Grinolds HR, Jackson KH, Kwan SH, Oldham WG. Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET's Journal of the Electrochemical Society. 130: 1139-1144. DOI: 10.1149/1.2119904  0.32
1983 Oldham WG, Arden W, Binder H, Ting C. Contrast studies in high-performance projection optics Ieee Transactions On Electron Devices. 30: 1474-1479. DOI: 10.1109/T-Ed.1983.21326  0.306
1982 Sodini CG, Wong SS, Ekstedt TW, Grinolds HR, Oldham WG. IIA-5 a JMOS transistor fabricated with 100A low pressure nitrided-oxide gate dielectric Ieee Transactions On Electron Devices. 31: 17-21. DOI: 10.1109/T-Ed.1984.21468  0.41
1982 Hui JC, Chiu T, Wong SS, Oldham WG. Sealed-interface local oxidation technology Ieee Transactions On Electron Devices. 29: 554-561. DOI: 10.1109/T-Ed.1982.20742  0.322
1982 Hui JC, Chiu T, Wong S-S, Oldham WG. Sealed-Interface Local Oxidation Technology Ieee Journal of Solid-State Circuits. 17: 184-191. DOI: 10.1109/Jssc.1982.1051714  0.324
1981 Jain PK, Neureuther AR, Oldham WG. Influence of Axial Chromatic Aberration in Projection Printing Ieee Transactions On Electron Devices. 28: 1410-1416. DOI: 10.1109/T-Ed.1981.20623  0.31
1981 Hui J, Chiu TY, Wong S, Oldham WG. Selective oxidation technologies for high density MOS Ieee Electron Device Letters. 2: 244-247. DOI: 10.1109/Edl.1981.25419  0.332
1981 Oldham WG, Subramanian S, Neureuther AR. Optical requirements for projection lithography Solid State Electronics. 24: 975-980. DOI: 10.1016/0038-1101(81)90120-9  0.356
1980 Oldham WG, Neureuther AR, Reynolds JL, Nandgaonkar SN, Sung C. A General Simulator for VLSI Lithography and Etching Processes: Part II—Application to Deposition and Etching Ieee Transactions On Electron Devices. 27: 1455-1459. DOI: 10.1109/T-Ed.1980.20056  0.323
1980 Oldham WG, Neureuther AR, Sung C, Reynolds JL, Nandgaonkar SN. A General Simulator for VLSI Lithography and Etching Processes: Part II-Application to Deposition and Etching Ieee Journal of Solid-State Circuits. 15: 520-524. DOI: 10.1109/Jssc.1980.1051432  0.322
1980 Oldham WG, Hieke E. Corrections to "A high resolution negative electron resist by image reversal" Ieee Electron Device Letters. 1: 244-244. DOI: 10.1109/Edl.1980.25305  0.311
1980 Oldham WG, Hieke E. A high resolution negative electron resist by image reversal Ieee Electron Device Letters. 1: 217-219. DOI: 10.1109/Edl.1980.25294  0.357
1980 Hartgring CD, Oldham WG, Chiu T. A MESFET model for circuit analysis Solid-State Electronics. 23: 121-126. DOI: 10.1016/0038-1101(80)90146-X  0.323
1979 Oldham WG, Nandgaonkar SN, Neureuther AR, O'Toole M. A general simulator for VLSI lithography and etching processes: Part I—Application to projection lithography Ieee Transactions On Electron Devices. 26: 717-722. DOI: 10.1109/T-Ed.1979.19482  0.315
1976 Ahlquist CN, Breivogel JR, Mccollum JL, Renninger AL, Koo JT, Oldham WG. A 16 384-bit dynamic ram Ieee Journal of Solid-State Circuits. 11: 570-574. DOI: 10.1109/Jssc.1976.1050783  0.303
1973 Sanga MM, Oldham WG. Measurement of Neutral Base Lifetime in Neutron-Irradiated Transistors Ieee Transactions On Nuclear Science. 20: 266-273. DOI: 10.1109/Tns.1973.4327406  0.33
1972 Oldham WG. Radiation Produced Trapping Effects in Devices-Invited Paper Ieee Transactions On Nuclear Science. 19: 347-354. DOI: 10.1109/Tns.1972.4326857  0.317
1971 Gregory BL, Naik SS, Oldham WG. Neutron produced trapping centers in junction field effect transistors Ieee Transactions On Nuclear Science. 18: 50-59. DOI: 10.1109/Tns.1971.4326413  0.307
1966 Riben AR, Feucht DL, Oldham WG. Preparation of Ge/Si and Ge / GaAs Heterojunctions Journal of the Electrochemical Society. 113: 245-249. DOI: 10.1149/1.2423925  0.302
1964 Oldham WG, Milnes AG. Interface states in abrupt semiconductor heterojunctions Solid-State Electronics. 7: 153-165. DOI: 10.1016/0038-1101(64)90140-6  0.334
1963 Oldham WG, Milnes AG. n-n Semiconductor heterojunctions Solid-State Electronics. 6: 121-132. DOI: 10.1016/0038-1101(63)90005-4  0.303
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