Year |
Citation |
Score |
2020 |
Khan AU, Srivastava A, Mayberry C, Sharma AK. Analytical Current Transport Modeling of Monolayer Molybdenum Disulfide-Based Dual Gate Tunnel Field Effect Transistor Ieee Transactions On Nanotechnology. 1-1. DOI: 10.1109/Tnano.2020.3012772 |
0.328 |
|
2019 |
Srivastava A. Ternary input signal to binary bit output conversion CMOS integrated circuit design using neuron MOSFETs Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems. 1-8. DOI: 10.1007/S00542-019-04440-0 |
0.35 |
|
2019 |
Srivastava A, Fahad MS, Sharma AK, Mayberry C. Computational study of silicene nanoribbon tunnel field-effect transistor Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems. 1-6. DOI: 10.1007/S00542-019-04438-8 |
0.382 |
|
2018 |
Zhao Z, Srivastava A, Peng L, Mohanty SP. Calibration method to reduce the error in logarithmic conversion with its circuit implementation Iet Circuits, Devices & Systems. 12: 301-308. DOI: 10.1049/Iet-Cds.2017.0315 |
0.326 |
|
2017 |
Fahad, Srivastava A. Subthreshold Slope of Vertical Graphene Interlayer Tunnel Transistor Nano. 12: 1750069. DOI: 10.1142/S1793292017500692 |
0.31 |
|
2017 |
Chen X, Srivastava A, Sharma AK, Mayberry C. Irradiation effect on back-gate graphene field-effect transistor Proceedings of Spie. 10196: 1019603. DOI: 10.1117/12.2258096 |
0.312 |
|
2017 |
Srivastava A, Chen X, Pradhan AK. Photo-electronic current transport in back-gated graphene transistor Proceedings of Spie. 10167. DOI: 10.1117/12.2258051 |
0.337 |
|
2017 |
Mohsin KM, Srivastava A. Modeling of Joule Heating Induced Effects in Multiwall Carbon Nanotube Interconnects Ieee Transactions On Very Large Scale Integration Systems. 25: 3089-3098. DOI: 10.1109/Tvlsi.2017.2737884 |
0.325 |
|
2017 |
Zhao Z, Srivastava A, Peng L, Chen S, Mohanty SP. A novel switchable pin method for regulating power in chip-multiprocessor Integration. 58: 329-338. DOI: 10.1016/J.Vlsi.2016.11.010 |
0.34 |
|
2016 |
Srivastava AK, Zhang C, Sadanandom A. Rice OVERLY TOLERANT TO SALT 1(OTS1) SUMO protease is a positive regulator of seed germination and root development. Plant Signaling & Behavior. 0. PMID 27119209 DOI: 10.1080/15592324.2016.1173301 |
0.446 |
|
2016 |
Srivastava AK, Zhang C, Yates G, Bailey M, Brown A, Sadanandom A. SUMO is a critical regulator of salt stress responses in rice. Plant Physiology. PMID 26869703 DOI: 10.1104/pp.15.01530 |
0.44 |
|
2016 |
Banadaki YM, Srivastava A. Effect of edge roughness on static characteristics of graphene nanoribbon field effect transistor Electronics (Switzerland). 5. DOI: 10.3390/Electronics5010011 |
0.302 |
|
2016 |
Fahad M, Srivastava A. A graphene switching transistor for vertical circuit design Ecs Journal of Solid State Science and Technology. 5: M13-M21. DOI: 10.1149/2.0051603Jss |
0.328 |
|
2016 |
Banadaki YM, Srivastava A, Sharifi S. Graphene nanoribbon field effect transistor for nanometer-size on-chip temperature sensor Proceedings of Spie. 9802: 980203. DOI: 10.1117/12.2219346 |
0.34 |
|
2016 |
Fahad MS, Srivastava A, Sharma AK, Mayberry C. Analytical current transport modeling of graphene nanoribbon tunnel field-effect transistors for digital circuit design Ieee Transactions On Nanotechnology. 15: 39-50. DOI: 10.1109/Tnano.2015.2496158 |
0.363 |
|
2016 |
Srivastava A, Fahad S. Vertical MoS2/hBN/MoS2 interlayer tunneling field effect transistor Solid-State Electronics. 126: 96-103. DOI: 10.1016/J.Sse.2016.09.008 |
0.315 |
|
2015 |
Bailey M, Srivastava A, Conti L, Nelis S, Zhang C, Florance H, Love A, Milner J, Napier R, Grant M, Sadanandom A. Stability of small ubiquitin-like modifier (SUMO) proteases OVERLY TOLERANT TO SALT1 and -2 modulates salicylic acid signalling and SUMO1/2 conjugation in Arabidopsis thaliana. Journal of Experimental Botany. PMID 26494731 DOI: 10.1093/jxb/erv468 |
0.439 |
|
2015 |
Chen S, Peng L, Hu Y, Zhao Z, Srivastava A, Zhang Y, Choi J, Li B, Song E. Powering Up Dark Silicon: Mitigating the Limitation of Power Delivery via Dynamic Pin Switching Ieee Transactions On Emerging Topics in Computing. 3: 489-501. DOI: 10.1109/Tetc.2015.2454854 |
0.315 |
|
2015 |
Banadaki YM, Srivastava A. Scaling Effects on Static Metrics and Switching Attributes of Graphene Nanoribbon FET for Emerging Technology Ieee Transactions On Emerging Topics in Computing. 3: 458-469. DOI: 10.1109/Tetc.2015.2445104 |
0.339 |
|
2015 |
Banadaki YM, Srivastava A. Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model Solid-State Electronics. 111: 80-90. DOI: 10.1016/J.Sse.2015.05.003 |
0.319 |
|
2014 |
Varshney S, Goswami M, Singh BR, Srivastava A. Low power-variable resolution analog-to-digital converter Journal of Low Power Electronics. 10: 236-246. DOI: 10.1166/Jolpe.2014.1316 |
0.311 |
|
2014 |
Banadaki YM, Mohsin KM, Srivastava A. A graphene field effect transistor for high temperature sensing applications Proceedings of Spie. 9060. DOI: 10.1117/12.2044611 |
0.332 |
|
2013 |
Mohsin KM, Srivastava A, Sharma AK, Mayberry C. A Thermal Model for Carbon Nanotube Interconnects. Nanomaterials (Basel, Switzerland). 3: 229-241. PMID 28348333 DOI: 10.3390/Nano3020229 |
0.301 |
|
2013 |
Fahad MS, Srivastava A, Sharma AK, Mayberry C. Current transport model of graphene nanoribbon tunnel transistor in variable and constant field Proceedings of Spie - the International Society For Optical Engineering. 8814. DOI: 10.1117/12.2022909 |
0.353 |
|
2012 |
Liu Y, Srivastava A. CMOS phase-locked loop circuits and hot carrier effects Journal of Low Power Electronics. 8: 304-316. DOI: 10.1166/Jolpe.2012.1194 |
0.326 |
|
2012 |
Srivastava A, Xu Y, Liu Y, Sharma AK, Mayberry C. CMOS LC voltage controlled oscillator design using multiwalled and single-walled carbon nanotube wire inductors Acm Journal On Emerging Technologies in Computing Systems. 8. DOI: 10.1145/2287696.2287698 |
0.308 |
|
2012 |
Srivastava A, Xu Y, Sharma AK, Mayberry C. Electronic current transport in CNT-FETs for operation in ballistic region Proceedings of Spie. 8344. DOI: 10.1117/12.914980 |
0.34 |
|
2011 |
Soundararajan R, Srivastava A, Yellampalli SS. Δ I DDQ Testing of a CMOS Digital-to-Analog Converter Considering Process Variation Effects Circuits and Systems. 2: 133-138. DOI: 10.4236/Cs.2011.23020 |
0.313 |
|
2010 |
Soundararajan R, Srivastava A, Xu Y. A programmable second order oversampling CMOS sigma-delta analog-to-digital converter for low-power sensor interface electronics Proceedings of Spie. 7646. DOI: 10.1117/12.847651 |
0.324 |
|
2010 |
Srivastava A, Xu Y, Sharma AK. Carbon nanotubes for next generation very large scale integration interconnects Journal of Nanophotonics. 4: 41690. DOI: 10.1117/1.3446896 |
0.327 |
|
2010 |
Srivastava A, Yellampalli S, Alli PK, Rajput SS. Combined oscillation and I DDQ testing of a CMOS amplifier circuit International Journal of Electronics. 97: 1-15. DOI: 10.1080/00207210802605424 |
0.326 |
|
2009 |
Xu Y, Srivastava A. Transient behavior of integrated carbon nanotube field effect transistor circuits and bio-sensing applications Proceedings of Spie. 7291. DOI: 10.1117/12.815392 |
0.332 |
|
2009 |
Srivastava A, Marulanda JM, Xu Y, Sharma AK. Current transport modeling of carbon nanotube field effect transistors Physica Status Solidi (a) Applications and Materials Science. 206: 1569-1578. DOI: 10.1002/Pssa.200824221 |
0.368 |
|
2008 |
Marulanda JM, Srivastava A, Sharma AK. Threshold and saturation voltages modeling of carbon nanotube field effect transistors (CNT-FETs) Nano. 3: 195-201. DOI: 10.1142/S1793292008000952 |
0.329 |
|
2008 |
Srivastava A, Zhang C. An Adaptive Body-Bias Generator for Low Voltage CMOS VLSI Circuits International Journal of Distributed Sensor Networks. 4: 213-222. DOI: 10.1080/15501320802001259 |
0.557 |
|
2006 |
Zhang C, Srivastava A. Hot Carrier Effects On Jitter Performance In Cmos Voltage-Controlled Oscillators Fluctuation and Noise Letters. 6. DOI: 10.1142/S0219477506003446 |
0.361 |
|
2006 |
Herlekar SR, Zhang C, Wu H, Srivastava A, Wu Y. OFDM performance analysis in the phase noise arising from the hot-carrier effect Ieee Transactions On Consumer Electronics. 52: 757-765. DOI: 10.1109/Tce.2006.1706467 |
0.318 |
|
2005 |
Srivastava A, Aluri S, Chamakura AK. A simple built-in current sensor for IDDQ testing of CMOS data converters Integration. 38: 579-596. DOI: 10.1016/J.Vlsi.2004.10.002 |
0.34 |
|
2004 |
Zhang C, Srivastava A, Ajmera PK. Noise Analysis In A 0.8 V Forward Body-Bias Cmos Op-Amp Design Fluctuation and Noise Letters. 4. DOI: 10.1142/S0219477504001975 |
0.301 |
|
2003 |
Srivastava A, Venkata HN. Quaternary to binary bit conversion CMOS integrated circuit design using multiple-input floating gate MOSFETS Integration. 36: 87-101. DOI: 10.1016/S0167-9260(03)00049-X |
0.362 |
|
2000 |
Mohan S, Kutilek S, Zhang C, Shen HG, Kodama Y, Srivastava AK, Wergedal JE, Beamer WG, Baylink DJ. Comparison of bone formation responses to parathyroid hormone(1-34), (1-31), and (2-34) in mice. Bone. 27: 471-8. PMID 11033441 DOI: 10.1016/S8756-3282(00)00355-0 |
0.405 |
|
2000 |
Srivastava A, Prasanna SV, Ajmera PK. Readout Electronics Scheme in CMOS Technology for Integration with Analog Outputs from Integrated Smart Sensors Journal of Intelligent Material Systems and Structures. 11: 116-124. DOI: 10.1106/Vnbg-4Vu8-6Whm-5W5L |
0.327 |
|
1996 |
George N, Srivastava A. Design, fabrication, and testing of polysilicon microheaters in silicon Proceedings of Spie. 2880: 224-230. DOI: 10.1117/12.250954 |
0.322 |
|
1992 |
Srivastava A. Variation in threshold voltage of n-MOS natural transistors International Journal of Electronics. 73: 295-299. DOI: 10.1080/00207219208925667 |
0.32 |
|
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