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Milan S. Minsky, Ph.D. - Publications

Affiliations: 
2000 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2002 Minsky MS, Watanabe S, Yamada N. Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells Journal of Applied Physics. 91: 5176-5181. DOI: 10.1063/1.1459106  0.456
2001 Sasaki C, Iwata M, Yamada Y, Taguchi T, Watanabe S, Minsky MS, Takeuchi T, Yamada N. Photoluminescence excitation spectroscopy of InxGa1-xN/GaN multiple quantum wells with various In compositions Physica Status Solidi (B) Basic Research. 228: 133-136. DOI: 10.1002/1521-3951(200111)228:1<133::AID-PSSB133>3.0.CO;2-6  0.482
1999 Jiang H, Minsky M, Keller S, Hu E, Singh J, DenBaars SP. Photoluminescence and photoluminescence excitation spectra of In0.2Ga0.8N-GaN quantum wells: comparison between experimental and theoretical studies Ieee Journal of Quantum Electronics. 35: 1483-1490. DOI: 10.1109/3.792574  0.422
1999 Chichibu SF, Marchand H, Minsky MS, Keller S, Fini PT, Ibbetson JP, Fleischer SB, Speck JS, Bowers JE, Hu E, Mishra UK, DenBaars SP, Deguchi T, Sota T, Nakamura S. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth Applied Physics Letters. 74: 1460-1462. DOI: 10.1063/1.123581  0.613
1999 Chichibu SF, Abare AC, Mack MP, Minsky MS, Deguchi T, Cohen D, Kozodoy P, Fleischer SB, Keller S, Speck JS, Bowers JE, Hu E, Mishra UK, Coldren LA, DenBaars SP, et al. Optical properties of InGaN quantum wells Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 59: 298-306. DOI: 10.1016/S0921-5107(98)00359-6  0.593
1998 Minsky MS, Chichibu S, Fleischer SB, Abare AC, Bowers JE, Hu EL, Keller S, Mishra UK, DenBaars SP. Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers Japanese Journal of Applied Physics. 37: L1362-L1364. DOI: 10.1143/Jjap.37.L1362  0.666
1998 Chichibu SF, Abare AC, Minsky MS, Keller S, Fleischer SB, Bowers JE, Hu E, Mishra UK, Coldren LA, Denbaars SP, Sota T. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures Applied Physics Letters. 73: 2006-2008. DOI: 10.1063/1.122350  0.592
1998 Cho YH, Song JJ, Keller S, Minsky MS, Hu E, Mishra UK, DenBaars SP. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells Applied Physics Letters. 73: 1128-1130. DOI: 10.1063/1.122105  0.602
1998 Chichibu S, Cohen DA, MacK MP, Abare AC, Kozodoy P, Minsky M, Fleischer S, Keller S, Bowers JE, Mishra UK, Coldren LA, Clarke DR, Denbaars SP. Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes Applied Physics Letters. 73: 496-498. DOI: 10.1063/1.121912  0.482
1998 Minsky MS, Fleischer SB, Abare AC, Bowers JE, Hu EL, Keller S, Denbaars SP. Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence Applied Physics Letters. 72: 1066-1068. DOI: 10.1063/1.120966  0.625
1998 Keller S, Chichibu S, Minsky M, Hu E, Mishra U, DenBaars S. Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells Journal of Crystal Growth. 195: 258-264. DOI: 10.1016/S0022-0248(98)00680-0  0.586
1998 Keller S, Keller BP, Minsky MS, Bowers JE, Mishra UK, DenBaars SP, Seifert W. Growth and properties of InGaN nanoscale islands on GaN Journal of Crystal Growth. 189: 29-32. DOI: 10.1016/S0022-0248(98)00150-X  0.376
1997 Sun CK, Keller S, Chiu TL, Wang G, Minsky MS, Bowers JE, DenBaars SP. Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques Ieee Journal On Selected Topics in Quantum Electronics. 3: 731-737. DOI: 10.1109/2944.640628  0.633
1997 Sun C, Chiu T, Keller S, Wang G, Minsky MS, DenBaars SP, Bowers JE. Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature Applied Physics Letters. 71: 425-427. DOI: 10.1063/1.119568  0.625
1996 Sun C, Keller S, Wang G, Minsky MS, Bowers JE, DenBaars SP. Radiative recombination lifetime measurements of InGaN single quantum well Applied Physics Letters. 69: 1936-1938. DOI: 10.1063/1.117627  0.538
1996 Minsky MS, White M, Hu EL. Room-temperature photoenhanced wet etching of GaN Applied Physics Letters. 68: 1531-1533. DOI: 10.1063/1.115689  0.474
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