Sarah M. Estrada, Ph.D. - Publications

Affiliations: 
2004 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering

5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 ESTRADA S, HU E, MISHRA U. n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION International Journal of High Speed Electronics and Systems. 14: 265-284. DOI: 10.1142/S0129156404002338  0.702
2003 Estrada S, Champlain J, Wang C, Stonas A, Coldren L, DenBaars S, Mishra U, Hu E. Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.20  0.684
2003 Estrada S, Huntington A, Stonas A, Xing H, Mishra U, DenBaars S, Coldren L, Hu E. n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750°C Applied Physics Letters. 83: 560-562. DOI: 10.1063/1.1592887  0.727
2003 Estrada S, Xing H, Stonas A, Huntington A, Mishra U, DenBaars S, Coldren L, Hu E. Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor Applied Physics Letters. 82: 820-822. DOI: 10.1063/1.1541946  0.72
2002 Estrada S, Stonas A, Huntington A, Xing H, Coldren L, DenBaars S, Mishra U, Hu E. The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L12.10  0.694
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