Sarah M. Estrada, Ph.D. - Publications
Affiliations: | 2004 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringYear | Citation | Score | |||
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2004 | ESTRADA S, HU E, MISHRA U. n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION International Journal of High Speed Electronics and Systems. 14: 265-284. DOI: 10.1142/S0129156404002338 | 0.702 | |||
2003 | Estrada S, Champlain J, Wang C, Stonas A, Coldren L, DenBaars S, Mishra U, Hu E. Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.20 | 0.684 | |||
2003 | Estrada S, Huntington A, Stonas A, Xing H, Mishra U, DenBaars S, Coldren L, Hu E. n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550-750°C Applied Physics Letters. 83: 560-562. DOI: 10.1063/1.1592887 | 0.727 | |||
2003 | Estrada S, Xing H, Stonas A, Huntington A, Mishra U, DenBaars S, Coldren L, Hu E. Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor Applied Physics Letters. 82: 820-822. DOI: 10.1063/1.1541946 | 0.72 | |||
2002 | Estrada S, Stonas A, Huntington A, Xing H, Coldren L, DenBaars S, Mishra U, Hu E. The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L12.10 | 0.694 | |||
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