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Leonard Forbes - Publications

Affiliations: 
Oregon State University, Corvallis, OR 
Area:
Electronics and Electrical Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Forbes L, Miller DA. Characterization of single electron effects in nanoscale mosfets Proceedings of Spie - the International Society For Optical Engineering. 7402. DOI: 10.1117/12.825169  0.561
2008 Forbes L, Miller DA, Jacob ME. Low Capacitance Electrical Probe for Nanoscale Devices and Circuits The Open Nanoscience Journal. 2: 39-42. DOI: 10.2174/1874140100802010039  0.505
2005 Louie MY, Miller DA, Jacob ME, Forbes L. Long term transients in MOSFET 1/f noise under switched bias conditions Device Research Conference - Conference Digest, Drc. 2005: 79-80. DOI: 10.1109/DRC.2005.1553064  0.359
2003 Forbes L, Zhang C, Zhang B, Chandra Y. Comparison of phase noise simulation techniques on a BJT LC oscillator. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 50: 716-9. PMID 12839184 DOI: 10.1109/Tuffc.2003.1209559  0.526
2002 Forbes L, Zhang C, Zhang B. Experimental verification of the dependence of bipolar transistor flicker noise on power dissipation Ieee Transactions On Electron Devices. 49: 945-947. DOI: 10.1109/16.998609  0.407
2000 Xie D, Forbes L. Phase noise on a 2-GHz CMOS LC oscillator Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 19: 773-778. DOI: 10.1109/43.851992  0.368
2000 Forbes L, Cheng M, Zhou J. Simulation of phase noise generated by white noise in 1.7 GHz CMOS LC oscillator Electronics Letters. 36: 1909. DOI: 10.1049/EL:20001369  0.342
1999 Forbes L, Yan K, Taylor S. A model for the channel noise of MESFETs including hot electron effects Microelectronics Reliability. 39: 1773-1786. DOI: 10.1016/S0026-2714(99)00184-5  0.453
1999 Forbes L, Choi MS, Cao W. 1/f noise due to temperature fluctuations in heat conduction in bipolar transistors Microelectronics Reliability. 39: 1357-1364. DOI: 10.1016/S0026-2714(99)00052-9  0.429
1996 Forbes L, Choi MS, Yan KT. 1/f Noise of GaAs resistors on semi-insulating substrates Ieee Transactions On Electron Devices. 43: 622-627. DOI: 10.1109/16.485545  0.396
1995 Forbes L. On the Theory of 1/f Noise of Semi-Insulating Materials Ieee Transactions On Electron Devices. 42: 1866-1868. DOI: 10.1109/16.464407  0.422
1991 Or B, Forbes L, Haddad H, Richling W. Annealing effects of carbon in n-channel LDD MOSFETs Ieee Electron Device Letters. 12: 596-598. DOI: 10.1109/55.119209  0.324
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