Richard T. Chan, Ph.D. - Publications

Affiliations: 
2005 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Electronics and Electrical Engineering

12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Feng M, Holonyak N, Chan R, James A, Walter G. High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a transistor laser Ieee Photonics Technology Letters. 18: 1240-1242. DOI: 10.1109/Lpt.2006.875333  0.532
2006 Feng M, Holonyak N, James A, Cimino K, Walter G, Chan R. Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser Applied Physics Letters. 89. DOI: 10.1063/1.2346369  0.573
2006 Walter G, James A, Holonyak N, Feng M, Chan R. Collector breakdown in the heterojunction bipolar transistor laser Applied Physics Letters. 88: 232105. DOI: 10.1063/1.2210079  0.609
2006 Chan R, Feng M, Holonyak N, James A, Walter G. Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser Applied Physics Letters. 88: 143508. DOI: 10.1063/1.2191448  0.575
2006 Feng M, Holonyak N, Chan R, James A, Walter G. Signal mixing in a multiple input transistor laser near threshold Applied Physics Letters. 88: 63509. DOI: 10.1063/1.2171834  0.584
2006 Dixon F, Chan R, Walter G, Holonyak N, Feng M, Zhang XB, Ryou JH, Dupuis RD. Visible spectrum light-emitting transistors Applied Physics Letters. 88. DOI: 10.1063/1.2158704  0.69
2005 Feng M, Holonyak N, Walter G, Chan R. Room temperature continuous wave operation of a heterojunction bipolar transistor laser Applied Physics Letters. 87: 131103. DOI: 10.1063/1.2058213  0.62
2005 Chan R, Feng M, Holonyak N, Walter G. Microwave operation and modulation of a transistor laser Applied Physics Letters. 86: 131114. DOI: 10.1063/1.1889243  0.652
2004 Walter G, Holonyak N, Feng M, Chan R. Laser operation of a heterojunction bipolar light-emitting transistor Applied Physics Letters. 85: 4768-4770. DOI: 10.1063/1.1818331  0.632
2004 Feng M, Holonyak N, Chu-Kung B, Walter G, Chan R. Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor Applied Physics Letters. 84: 4792-4794. DOI: 10.1063/1.1760595  0.565
2004 Feng M, Holonyak N, Chan R. Quantum-well-base heterojunction bipolar light-emitting transistor Applied Physics Letters. 84: 1952-1954. DOI: 10.1063/1.1669071  0.638
2003 Chan R, Lesnick R, Becher D, Feng M. Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles Ieee\/Asme Journal of Microelectromechanical Systems. 12: 713-719. DOI: 10.1109/Jmems.2003.817889  0.627
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