Year |
Citation |
Score |
2006 |
Feng M, Holonyak N, Chan R, James A, Walter G. High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a transistor laser Ieee Photonics Technology Letters. 18: 1240-1242. DOI: 10.1109/Lpt.2006.875333 |
0.532 |
|
2006 |
Feng M, Holonyak N, James A, Cimino K, Walter G, Chan R. Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser Applied Physics Letters. 89. DOI: 10.1063/1.2346369 |
0.573 |
|
2006 |
Walter G, James A, Holonyak N, Feng M, Chan R. Collector breakdown in the heterojunction bipolar transistor laser Applied Physics Letters. 88: 232105. DOI: 10.1063/1.2210079 |
0.609 |
|
2006 |
Chan R, Feng M, Holonyak N, James A, Walter G. Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser Applied Physics Letters. 88: 143508. DOI: 10.1063/1.2191448 |
0.575 |
|
2006 |
Feng M, Holonyak N, Chan R, James A, Walter G. Signal mixing in a multiple input transistor laser near threshold Applied Physics Letters. 88: 63509. DOI: 10.1063/1.2171834 |
0.584 |
|
2006 |
Dixon F, Chan R, Walter G, Holonyak N, Feng M, Zhang XB, Ryou JH, Dupuis RD. Visible spectrum light-emitting transistors Applied Physics Letters. 88. DOI: 10.1063/1.2158704 |
0.69 |
|
2005 |
Feng M, Holonyak N, Walter G, Chan R. Room temperature continuous wave operation of a heterojunction bipolar transistor laser Applied Physics Letters. 87: 131103. DOI: 10.1063/1.2058213 |
0.62 |
|
2005 |
Chan R, Feng M, Holonyak N, Walter G. Microwave operation and modulation of a transistor laser Applied Physics Letters. 86: 131114. DOI: 10.1063/1.1889243 |
0.652 |
|
2004 |
Walter G, Holonyak N, Feng M, Chan R. Laser operation of a heterojunction bipolar light-emitting transistor Applied Physics Letters. 85: 4768-4770. DOI: 10.1063/1.1818331 |
0.632 |
|
2004 |
Feng M, Holonyak N, Chu-Kung B, Walter G, Chan R. Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor Applied Physics Letters. 84: 4792-4794. DOI: 10.1063/1.1760595 |
0.565 |
|
2004 |
Feng M, Holonyak N, Chan R. Quantum-well-base heterojunction bipolar light-emitting transistor Applied Physics Letters. 84: 1952-1954. DOI: 10.1063/1.1669071 |
0.638 |
|
2003 |
Chan R, Lesnick R, Becher D, Feng M. Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles Ieee\/Asme Journal of Microelectromechanical Systems. 12: 713-719. DOI: 10.1109/Jmems.2003.817889 |
0.627 |
|
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