| Year |
Citation |
Score |
| 2024 |
Yang YC, Wan Z, Hsu GT, Chiu CC, Chen WH, Feifel M, Lackner D, Xia GM, Wu CH. 25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate. Optics Letters. 49: 586-589. PMID 38300065 DOI: 10.1364/OL.509988 |
0.346 |
|
| 2023 |
Cheng HT, Wu CH, Feng M, Wu CH. 40.1-GHz sub-freezing 850-nm VCSEL: microwave extraction of cavity lifetimes and small-signal equivalent circuit modeling. Optics Express. 31: 11408-11422. PMID 37155776 DOI: 10.1364/OE.486480 |
0.538 |
|
| 2022 |
Cheng HT, Qiu J, Peng CY, Kuo HC, Feng M, Wu CH. 29 GHz single-mode vertical-cavity surface-emitting lasers passivated by atomic layer deposition. Optics Express. 30: 47553-47566. PMID 36558682 DOI: 10.1364/OE.474930 |
0.528 |
|
| 2022 |
Peng CY, Cheng HT, Hong YH, Hsu WC, Hsiao FH, Lu TC, Chang SW, Chen SC, Wu CH, Kuo HC. Performance Analyses of Photonic-Crystal Surface-Emitting Laser: Toward High-Speed Optical Communication. Nanoscale Research Letters. 17: 90. PMID 36114432 DOI: 10.1186/s11671-022-03728-x |
0.361 |
|
| 2020 |
Peng CY, Tsao K, Cheng HT, Feng M, Wu CH. Investigation of the current influence on near-field and far-field beam patterns for an oxide-confined vertical-cavity surface-emitting laser. Optics Express. 28: 30748-30759. PMID 33115069 DOI: 10.1364/OE.397878 |
0.506 |
|
| 2020 |
Tung CT, Chang SW, Wu CH. Chirp-free optical-signal generation using dual-and-direct current-voltage modulation of transistor lasers. Optics Letters. 45: 2474-2477. PMID 32356794 DOI: 10.1364/Ol.383069 |
0.439 |
|
| 2020 |
Lan HY, Tseng IC, Lin YH, Lin GR, Huang DW, Wu CH. High-speed integrated micro-LED array for visible light communication. Optics Letters. 45: 2203-2206. PMID 32287194 DOI: 10.1364/Ol.391566 |
0.446 |
|
| 2020 |
Zhang YW, Li JY, Wu CH, Chang CY, Chang SW, Shih MH, Lin SY. Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures. Scientific Reports. 10: 5967. PMID 32249852 DOI: 10.1038/S41598-020-63098-1 |
0.315 |
|
| 2020 |
Peng C, Cheng H, Kuo H, Wu C. Design and Optimization of VCSELs for up to 40-Gb/s Error-Free Transmission Through Impurity-Induced Disordering Ieee Transactions On Electron Devices. 67: 1041-1046. DOI: 10.1109/Ted.2020.2966364 |
0.407 |
|
| 2020 |
Lan H, Tseng I, Lin Y, Chang S, Wu C. Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting Transistor Ieee Electron Device Letters. 41: 91-94. DOI: 10.1109/Led.2019.2955733 |
0.426 |
|
| 2020 |
Peng C, Qiu J, Huang T, Wu C, Feng M, Wu C. 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers for 40 Gb/s Error-Free Transmission up to 500 m in OM4 Fiber Ieee Electron Device Letters. 41: 84-86. DOI: 10.1109/Led.2019.2953508 |
0.439 |
|
| 2020 |
Huang C, Wang H, Wu C, Cheng C, Tsai C, Wu C, Feng M, Lin G. Comparison of High-Speed PAM4 and QAM-OFDM Data Transmission Using Single-Mode VCSEL in OM5 and OM4 MMF Links Ieee Journal of Selected Topics in Quantum Electronics. 26: 1-10. DOI: 10.1109/Jstqe.2019.2903754 |
0.426 |
|
| 2020 |
Huang C, Tsai C, Weng J, Cheng C, Wang H, Wu C, Feng M, Lin G. Temperature and Noise Dependence of Tri-Mode VCSEL Carried 120-Gbit/s QAM-OFDM Data in Back-to-Back and OM5-MMF Links Journal of Lightwave Technology. 1-1. DOI: 10.1109/Jlt.2020.3017798 |
0.494 |
|
| 2020 |
Huang C, Wang H, Wu C, Lo W, Tsai C, Wu C, Feng M, Lin G. Comparison on OM5-MMF and OM4-MMF Data Links With 32-GBaud PAM-4 Modulated Few-Mode VCSEL at 850 nm Journal of Lightwave Technology. 38: 573-582. DOI: 10.1109/Jlt.2019.2941501 |
0.473 |
|
| 2020 |
Huang C, Wang H, Peng C, Tsai C, Wu C, Lin G. Multimode VCSEL Enables 42-GBaud PAM-4 and 35-GBaud 16-QAM OFDM for 100-m OM5 MMF Data Link Ieee Access. 8: 36963-36973. DOI: 10.1109/Access.2020.2975127 |
0.476 |
|
| 2019 |
Shen CC, Hsu TC, Yeh YW, Kang CY, Lu YT, Lin HW, Tseng HY, Chen YT, Chen CY, Lin CC, Wu CH, Lee PT, Sheng Y, Chiu CH, Kuo HC. Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s. Nanoscale Research Letters. 14: 276. PMID 31414236 DOI: 10.1186/S11671-019-3107-7 |
0.306 |
|
| 2019 |
Tung CT, Chang CH, Chang SW, Wu CH. Pulse compression irrespective of fiber dispersion using chirp of transistor lasers. Optics Letters. 44: 2109-2112. PMID 30985823 DOI: 10.1364/Ol.44.002109 |
0.346 |
|
| 2019 |
Chang L, Dai C, Wu C. Threshold Voltage Modulation of Enhancement-Mode InGaAs Schottky-Gate Fin-HEMTs Ieee Electron Device Letters. 40: 534-537. DOI: 10.1109/Led.2019.2902349 |
0.413 |
|
| 2019 |
Kao H, Tsai C, Chi Y, Peng C, Leong S, Wang H, Cheng C, Wu W, Kuo H, Cheng W, Wu C, Lin G. Long-Term Thermal Stability of Single-Mode VCSEL Under 96-Gbit/s OFDM Transmission Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-9. DOI: 10.1109/Jstqe.2019.2908554 |
0.437 |
|
| 2019 |
Chang L, Yin S, Wu C. Effect of border traps on the threshold voltage instability of fluoride-doped AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors Journal of Physics D. 52: 195102. DOI: 10.1088/1361-6463/Ab053D |
0.336 |
|
| 2019 |
Wu C, Wu C. 12 GHz spontaneous optical bandwidth tunnel junction light-emitting transistor Applied Physics Letters. 115: 181102. DOI: 10.1063/1.5124959 |
0.48 |
|
| 2019 |
Chang Y, Chou Y, Chang S, Wu C. Thermally-enhanced current gain of quantum-well heterojunction bipolar transistor Journal of Applied Physics. 126: 014503. DOI: 10.1063/1.5091050 |
0.357 |
|
| 2019 |
Chang L, Lin J, Dai C, Yang M, Jiang Y, Wu Y, Wu C. Systematic investigation of the threshold voltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs Journal of Applied Physics. 125: 94502. DOI: 10.1063/1.5085275 |
0.339 |
|
| 2019 |
Tung C, Chang S, Wu C. Theoretical analysis on optical frequency response of tunnel-junction transistor lasers operated in different configurations Journal of Applied Physics. 125: 023105. DOI: 10.1063/1.5067281 |
0.425 |
|
| 2018 |
Cheng C, Shen C, Kao H, Hsieh D, Wang H, Yeh Y, Lu Y, Chen SH, Tsai C, Chi Y, Kao TS, Wu C, Kuo H, Lee P, Lin G. 850/940-nm VCSEL for optical communication and 3D sensing Opto-Electronic Advances. 1: 180005. DOI: 10.29026/Oea.2018.180005 |
0.448 |
|
| 2018 |
Kao H, Tsai C, Leong S, Peng C, Chi Y, Wang H, Kuo H, Wu C, Cheng W, Lin G. Single-mode VCSEL for pre-emphasis PAM-4 transmission up to 64 Gbit/s over 100-300 m in OM4 MMF Photonics Research. 6: 666-673. DOI: 10.1364/Prj.6.000666 |
0.417 |
|
| 2018 |
Lan H, Tseng I, Kao H, Lin Y, Lin G, Wu C. 752-MHz Modulation Bandwidth of High-Speed Blue Micro Light-Emitting Diodes Ieee Journal of Quantum Electronics. 54: 1-6. DOI: 10.1109/Jqe.2018.2867087 |
0.416 |
|
| 2018 |
Feng M, Wu C, Holonyak N. Oxide-Confined VCSELs for High-Speed Optical Interconnects Ieee Journal of Quantum Electronics. 54: 1-15. DOI: 10.1109/Jqe.2018.2817068 |
0.603 |
|
| 2018 |
Kao H, Su Z, Shih H, Chi Y, Tsai C, Kuo H, Wu C, Jou J, Shih T, Lin G. CWDM DFBLD Transmitter Module for 10-km Interdata Center With Single-Channel 50-Gbit/s PAM-4 and 62-Gbit/s QAM-OFDM Journal of Lightwave Technology. 36: 703-711. DOI: 10.1109/Jlt.2017.2777822 |
0.404 |
|
| 2017 |
Kao HY, Tsai CT, Leong SF, Peng CY, Chi YC, Huang JJ, Kuo HC, Shih TT, Jou JJ, Cheng WH, Wu CH, Lin GR. Comparison of single-/few-/multi-mode 850 nm VCSELs for optical OFDM transmission. Optics Express. 25: 16347-16363. PMID 28789140 DOI: 10.1364/Oe.25.016347 |
0.505 |
|
| 2017 |
Shih TT, Chi YC, Wang RN, Wu CH, Huang JJ, Jou JJ, Lee TC, Kuo HC, Lin GR, Cheng WH. Efficient Heat Dissipation of Uncooled 400-Gbps (16×25-Gbps) Optical Transceiver Employing Multimode VCSEL and PD Arrays. Scientific Reports. 7: 46608. PMID 28417978 DOI: 10.1038/Srep46608 |
0.655 |
|
| 2017 |
Kao H, Chi Y, Tsai C, Leong S, Peng C, Wang H, Huang JJ, Jou J, Shih T, Kuo H, Cheng W, Wu C, Lin G. Few-mode VCSEL chip for 100-Gb/s transmission over 100 m multimode fiber Photonics Research. 5: 507-515. DOI: 10.1364/Prj.5.000507 |
0.477 |
|
| 2017 |
Yang L, Chang C, Wu C. Analysis of quantum well optical modulation in light-emitting transistors Proceedings of Spie. 10103: 1010322. DOI: 10.1117/12.2257350 |
0.442 |
|
| 2017 |
Chang L, Yang M, Jiang Y, Wu C. Investigation of GaN Fin-HEMTs with micron-scale fin width Proceedings of Spie. 10104. DOI: 10.1117/12.2257211 |
0.366 |
|
| 2017 |
Kao H, Chi Y, Peng C, Leong S, Chang C, Wu Y, Shih T, Huang JJ, Kuo H, Cheng W, Wu C, Lin G. Modal Linewidth Dependent Transmission Performance of 850-nm VCSELs With Encoding PAM-4 Over 100-m MMF Ieee Journal of Quantum Electronics. 53: 1-8. DOI: 10.1109/Jqe.2017.2750414 |
0.411 |
|
| 2017 |
Tsai C, Peng C, Wu C, Leong S, Kao H, Wang H, Chen Y, Weng Z, Chi Y, Kuo H, Huang JJ, Lee T, Shih T, Jou J, Cheng W, ... Wu C, et al. Multi-Mode VCSEL Chip with High-Indium-Density InGaAs/AlGaAs Quantum-Well Pairs for QAM-OFDM in Multi-Mode Fiber Ieee Journal of Quantum Electronics. 53: 1-8. DOI: 10.1109/Jqe.2017.2703645 |
0.453 |
|
| 2016 |
Chang CH, Chang SW, Wu CH. Theory for voltage modulation of transistor lasers using Franz-Keldysh absorption in the presence of optoelectronic feedback. Optics Express. 24: 25515-25527. PMID 27828490 DOI: 10.1364/Oe.24.025515 |
0.397 |
|
| 2016 |
Wu CR, Chang XR, Chu TW, Chen HA, Wu CH, Lin SY. The Establishment of 2D Crystal Hetero-structures By Sulfurization of Sequential Transition Metal Depositions: The Preparation, Characterization and Selective Growth. Nano Letters. PMID 27763763 DOI: 10.1021/Acs.Nanolett.6B03353 |
0.311 |
|
| 2016 |
Liang S, Hsu Y, Cheng G, Wu C. Developing the OEIC solutions using two section light-emitting transistor Proceedings of Spie. 9750. DOI: 10.1117/12.2214013 |
0.491 |
|
| 2016 |
Chang C, Chang S, Wu C. The role of optoelectronic feedback on Franz-Keldysh voltage modulation of transistor lasers Proceedings of Spie. 9742: 974214. DOI: 10.1117/12.2212530 |
0.474 |
|
| 2016 |
Yin YF, Lan WY, Hsu YH, Hsu YF, Wu CH, Huang J. High-speed modulation from the fast mode extraction of a photonic crystal light-emitting diode Journal of Applied Physics. 119. DOI: 10.1063/1.4938478 |
0.671 |
|
| 2015 |
Wu CH, Chen HA, Lin SY, Wu CH. 1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy. Optics Letters. 40: 3747-9. PMID 26274650 DOI: 10.1364/Ol.40.003747 |
0.405 |
|
| 2015 |
Yeh PC, Lin YW, Huang YL, Hung JH, Lin BR, Yang L, Wu CH, Wu TK, Peng LH. Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides Applied Physics Express. 8. DOI: 10.7567/Apex.8.084101 |
0.374 |
|
| 2015 |
Yang HH, Wang HL, Wu CH. Investigation of junction thermal characteristics of light-emitting transistors Ieee Transactions On Electron Devices. 62: 808-812. DOI: 10.1109/Ted.2015.2389523 |
0.354 |
|
| 2015 |
Wang HL, Huang YH, Cheng GS, Chang SW, Wu CH. Analysis of Tunable Internal Loss Caused by Franz-Keldysh Absorption in Transistor Lasers Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2015.2438814 |
0.38 |
|
| 2015 |
Wu CR, Chang XR, Chang SW, Chang CE, Wu CH, Lin SY. Multilayer MoS2 prepared by one-time and repeated chemical vapor depositions: Anomalous Raman shifts and transistors with high ON/OFF ratio Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/43/435101 |
0.317 |
|
| 2014 |
Yang HH, Tu WC, Wang HL, Wu CH. Investigation of effective base transit time and current gain modulation of light-emitting transistors under different ambient temperatures Applied Physics Letters. 105. DOI: 10.1063/1.4901338 |
0.439 |
|
| 2014 |
Wu CH. Analysis of different tunneling mechanisms of InxGa1-xAs/AlGaAs tunnel junction light-emitting transistors Applied Physics Letters. 105. DOI: 10.1063/1.4898342 |
0.436 |
|
| 2013 |
Wang HL, Chou PH, Wu CH. Microwave determination of quantum-well capture and escape time in light-emitting transistors Ieee Transactions On Electron Devices. 60: 1088-1091. DOI: 10.1109/Ted.2013.2242330 |
0.358 |
|
| 2013 |
Wang H, Huang Y, Wu C. Optical frequency response analysis of light-emitting transistors under different microwave configurations Applied Physics Letters. 103: 51110. DOI: 10.1063/1.4817545 |
0.444 |
|
| 2009 |
Wu C, Walter G, Then HW, Feng M, Holonyak N. 4-GHz Modulation Bandwidth of Integrated 2 $\,\times\,$ 2 LED Array Ieee Photonics Technology Letters. 21: 1834-1836. DOI: 10.1109/Lpt.2009.2034385 |
0.701 |
|
| 2006 |
Chang W, Su Y, Wu C, Lin C. Broad-Gain Measurement of Semiconductor Optical Amplifier with Nonidentical Multiple Quantum Wells Japanese Journal of Applied Physics. 45. DOI: 10.1143/Jjap.45.L259 |
0.418 |
|
| 2004 |
Lin C, Su Y, Wu C, Chang Y. Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells Japanese Journal of Applied Physics. 43: 7032-7035. DOI: 10.1143/Jjap.43.7032 |
0.347 |
|
| 2004 |
Lin C, Su Y, Wu C, Shmavonyan GS. Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells Ieee Photonics Technology Letters. 16: 1441-1443. DOI: 10.1109/Lpt.2004.827119 |
0.378 |
|
| 2003 |
Lin C, Su Y, Yu D, Wu C, Wu B. Improved temperature characteristics of laser diodes with nonidentical multiple quantum wells due to temperature-induced carrier redistribution Applied Physics Letters. 82: 3403-3405. DOI: 10.1063/1.1577384 |
0.326 |
|
| 1998 |
Zhang XF, Feng MF, Wu CH, Zhou PA. [Properties of the GM-CSF-induced outward K+ current in murine peritoneal exudate macrophages]. Sheng Li Xue Bao : [Acta Physiologica Sinica]. 50: 153-62. PMID 11324529 |
0.385 |
|
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