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Brett A. Hull, Ph.D. - Publications

Affiliations: 
2004 Pennsylvania State University, State College, PA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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72 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Lichtenwalner DJ, Sabri S, Brunt EV, Hull B, Ryu SH, Steinmann P, Romero A, Park JH, Ganguly S, Gajewski DA, Richmond J, Allen S, Palmour JW. Accelerated Testing of SiC Power Devices under High-Field Operating Conditions Materials Science Forum. 1004: 992-997. DOI: 10.4028/Www.Scientific.Net/Msf.1004.992  0.334
2019 Brunt Ev, O’Loughlin M, Burk A, Hull B, Ryu SH, Richmond J, Khlebnikov Y, Balkas E, Gajewski DA, Allen S, Palmour JW. Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions Materials Science Forum. 963: 805-810. DOI: 10.4028/Www.Scientific.Net/Msf.963.805  0.317
2019 Lichtenwalner DJ, Sabri S, Brunt Ev, Hull B, Ganguly S, Gajewski DA, Allen S, Palmour JW. Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers Materials Science Forum. 963: 745-748. DOI: 10.4028/Www.Scientific.Net/Msf.963.745  0.354
2019 Ryu SH, Lichtenwalner DJ, O’Loughlin M, Capell C, Richmond J, Brunt EV, Jonas C, Lemma Y, Burk A, Hull B, McCain M, Sabri S, O'Brien H, Ogunniyi A, Lelis A, et al. 15 kV n-GTOs in 4H-SiC Materials Science Forum. 963: 651-654. DOI: 10.4028/Www.Scientific.Net/Msf.963.651  0.327
2019 Akturk A, McGarrity JM, Goldsman N, Lichtenwalner DJ, Hull B, Grider D, Wilkins R. Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices Ieee Transactions On Nuclear Science. 66: 1828-1832. DOI: 10.1109/Tns.2019.2919334  0.329
2018 Zhang JQ, McCain M, Hull B, Casady J, Allen S, Palmour JW, Hayes M, Neelakantan A, Fruth J. 650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules Materials Science Forum. 924: 822-826. DOI: 10.4028/Www.Scientific.Net/Msf.924.822  0.358
2018 Anurag A, Gohil G, Acharya S, Han KJ, Vechalapu K, Baliga BJ, Bhattacharya S, Brunt EV, Sabri S, Hull B, Grider D. Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET Materials Science Forum. 924: 739-742. DOI: 10.4028/Www.Scientific.Net/Msf.924.739  0.318
2018 Ryu SH, Lichtenwalner DJ, O'Loughlin M, Brunt EV, Capell C, Jonas C, Lemma Y, Zhang JQ, Richmond J, Burk A, Hull B, McCain M, Sabri S, O'Brien H, Ogunniyi A, et al. Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes Materials Science Forum. 924: 633-636. DOI: 10.4028/Www.Scientific.Net/Msf.924.633  0.343
2018 Lichtenwalner DJ, Akturk A, McGarrity J, Richmond J, Barbieri T, Hull B, Grider D, Allen S, Palmour JW. Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout Materials Science Forum. 924: 559-562. DOI: 10.4028/Www.Scientific.Net/Msf.924.559  0.43
2018 Brunt EV, Burk A, Lichtenwalner DJ, Leonard R, Sabri S, Gajewski DA, Mackenzie A, Hull B, Allen S, Palmour JW. Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices Materials Science Forum. 924: 137-142. DOI: 10.4028/Www.Scientific.Net/Msf.924.137  0.394
2018 Akturk A, McGarrity JM, Goldsman N, Lichtenwalner D, Hull B, Grider D, Wilkins R. Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes Ieee Transactions On Nuclear Science. 65: 1248-1254. DOI: 10.1109/Tns.2018.2833741  0.368
2018 Witulski AF, Arslanbekov R, Raman A, Schrimpf RD, Sternberg AL, Galloway KF, Javanainen A, Grider D, Lichtenwalner DJ, Hull B. Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices Ieee Transactions On Nuclear Science. 65: 256-261. DOI: 10.1109/Tns.2017.2782227  0.424
2017 Eni E, Beczkowski S, Munk-Nielsen S, Kerekes T, Teodorescu R, Juluri RR, Julsgaard B, VanBrunt E, Hull B, Sabri S, Grider D, Uhrenfeldt C. Short-Circuit Degradation of 10-kV 10-A SiC MOSFET Ieee Transactions On Power Electronics. 32: 9342-9354. DOI: 10.1109/Tpel.2017.2657754  0.433
2016 Ryu S, Lichtenwalner D, Brunt EV, Capell C, O'Loughlin M, Jonas C, Lemma Y, Zhang J, Richmond J, Burk A, Hull B, O'Brien H, Ogunniyi A, Lelis A, Casady J, et al. Impact of carrier lifetime enhancement using high temperature oxidation on 15 kV 4H-SiC P-GTO thyristor Materials Science Forum. 897: 587-590. DOI: 10.4028/Www.Scientific.Net/Msf.897.587  0.442
2016 Zhang QJ, Wang G, Jonas C, Capell C, Pickle S, Butler P, Lichtenwalner D, Brunt EV, Ryu S, Richmond J, Hull B, Casady J, Allen S, Palmour J. Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed Materials Science Forum. 897: 521-524. DOI: 10.4028/Www.Scientific.Net/Msf.897.521  0.469
2016 Lichtenwalner DJ, Dycus JH, Xu W, Lebeau JM, Hull B, Allen S, Palmour JW. Electrical properties and interface structure of SiC MOSFETs with barium interface passivation Materials Science Forum. 897: 163-166. DOI: 10.4028/Www.Scientific.Net/Msf.897.163  0.361
2016 Pala V, Brunt Ev, Hull BA, Allen S, Palmour JW. Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems Materials Science Forum. 858: 970-973. DOI: 10.4028/Www.Scientific.Net/Msf.858.970  0.409
2016 Marino CD, Hull BA. Avalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETs Materials Science Forum. 858: 872-875. DOI: 10.4028/Www.Scientific.Net/Msf.858.872  0.418
2016 Lichtenwalner DJ, Pala V, Hull BA, Allen S, Palmour JW. High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation Materials Science Forum. 858: 671-676. DOI: 10.4028/Www.Scientific.Net/Msf.858.671  0.432
2016 Lichtenwalner DJ, Hull B, Pala V, Brunt EV, Ryu S, Sumakeris JJ, O’Loughlin MJ, Burk AA, Allen ST, Palmour JW. Performance and Reliability of SiC Power MOSFETs Mrs Advances. 1: 81-89. DOI: 10.1557/Adv.2015.57  0.487
2016 Hazra S, De A, Cheng L, Palmour J, Schupbach M, Hull BA, Allen S, Bhattacharya S. High Switching Performance of 1700-V, 50-A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications Ieee Transactions On Power Electronics. 31: 4742-4754. DOI: 10.1109/Tpel.2015.2432012  0.448
2016 Houston Dycus J, Xu W, Lichtenwalner DJ, Hull B, Palmour JW, LeBeau JM. Structure and chemistry of passivated SiC/SiO2 interfaces Applied Physics Letters. 108. DOI: 10.1063/1.4951677  0.349
2015 Zhang QCJ, Duc J, Hull B, Young J, Ryu SH, Allen S, Palmour JW. CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit Materials Science Forum. 765-768. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.765  0.425
2015 Allen S, Pala V, VanBrunt E, Hull B, Cheng L, Ryu S, Richmond J, O’Loughlin M, Burk A, Palmour J. Next-generation planar SiC MOSFETs from 900 V to 15 kV Materials Science Forum. 821: 701-704. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.701  0.407
2015 Stahlbush RE, Mahadik NA, Zhang QJ, Burk AA, Hull BA, Young J. Basal plane dislocations created in 4H-SiC epitaxy by implantation and activation anneal Materials Science Forum. 821: 387-390. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.387  0.328
2015 Ryu S, Capell C, Van Brunt E, Jonas C, O'Loughlin M, Clayton J, Lam K, Pala V, Hull B, Lemma Y, Lichtenwalner D, Zhang QJ, Richmond J, Butler P, Grider D, et al. Ultra high voltage MOS controlled 4H-SiC power switching devices Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/084001  0.47
2014 Gajewski DA, Ryu SH, Das M, Hull B, Young J, Palmour JW. Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications Materials Science Forum. 967-970. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.967  0.375
2013 Zhang QCJ, Duc J, Mieczkowski V, Hull B, Allen S, Palmour JW. 4H-SiC Trench Schottky Diodes for Next Generation Products Materials Science Forum. 781-784. DOI: 10.4028/Www.Scientific.Net/Msf.740-742.781  0.426
2013 Caldwell JD, Giles A, Lepage D, Carrier D, Moumanis K, Hull BA, Stahlbush RE, Myers-Ward RL, Dubowski JJ, Verhaegen M. Experimental evidence for mobile luminescence center mobility on partial dislocations in 4H-SiC using hyperspectral electroluminescence imaging Applied Physics Letters. 102. DOI: 10.1063/1.4810909  0.309
2012 Caldwell JD, Lombez L, Delamarre A, Guillemoles JF, Bourgoin B, Hull BA, Verhaegen M. Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging Materials Science Forum. 403-406. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.403  0.338
2011 Hull BA, Ryu SH, Zhang J, Jonas C, O'Loughlin MJ, Callanan R, Palmour J. 1700V, 20A 4H-SiC DMOSFETs optimized for high temperature operation Materials Science Forum. 679: 633-636. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.633  0.403
2010 Ryu SH, Hull BA, Dhar S, Cheng L, Zhang QCJ, Richmond J, Das MK, Agarwal AK, Palmour JW, Lelis AJ, Geil B, Scozzie C. Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs Materials Science Forum. 969-974. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.969  0.427
2010 Caldwell JD, Giles AJ, Stahlbush RE, Ancona MG, Glembocki OJ, Hobart KD, Hull BA, Liu KX. On the Luminescence and Driving Force of Stacking Faults in 4H-SiC Materials Science Forum. 277-282. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.277  0.375
2010 Giles AJ, Caldwell JD, Stahlbush RE, Hull BA, Mahadik NA, Glembocki OJ, Hobart KD, Liu KX. Electroluminescence spectral imaging of extended defects in 4H-SiC Journal of Electronic Materials. 39: 777-780. DOI: 10.1007/S11664-010-1109-4  0.316
2009 Rumyantsev SL, Shur MS, Levinshtein ME, Ivanov PA, Palmour JW, Das MK, Hull BA. Low Frequency Noise in 4H-SiC MOSFETs Materials Science Forum. 817-820. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.817  0.37
2009 Hull BA, Jonas C, Ryu SH, Das M, O'Loughlin M, Husna F, Callanan R, Richmond J, Agarwal A, Palmour J, Scozzie C. Performance of 60 A, 1200 V 4H-SiC DMOSFETs Materials Science Forum. 615: 749-752. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.749  0.424
2009 Green R, Ogunniyi A, Ibitayo D, Koebke G, Morgenstern M, Lelis A, Dickens C, Hull B. Evaluation of 4H–SiC DMOSFETs for high–power electronics applications Materials Science Forum. 600: 1135-1138. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1135  0.457
2009 Rumyantsev SL, Shur MS, Levinshtein ME, Ivanov PA, Palmour JW, Agarwal AK, Hull BA, Ryu S. Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures Semiconductor Science and Technology. 24: 75011. DOI: 10.1088/0268-1242/24/7/075011  0.377
2008 Hull BA, Sumakeris JJ, O'Loughlin MJ, Zhang QJ, Richmond J, Powell AR, Paisley MJ, Tsvetkov VF, Hefner A, Rivera A. Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers Materials Science Forum. 931-934. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.931  0.442
2008 Agarwal AK, Burk AA, Callanan R, Capell C, Das MK, Haney SK, Hull BA, Jonas C, O'Loughlin MJ, O`Neil M, Palmour JW, Powell AR, Richmond J, Ryu SH, Stahlbush RE, et al. Critical Technical Issues in High Voltage SiC Power Devices Materials Science Forum. 895-900. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.895  0.417
2008 Burk AA, O'Loughlin MJ, Sumakeris JJ, Hallin C, Berkman E, Balakrishna V, Young J, Garrett L, Irvine KG, Powell AR, Khlebnikov Y, Leonard RT, Basceri C, Hull BA, Agarwal AK. SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices Materials Science Forum. 77-82. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.77  0.381
2008 Levinshtein ME, Mnatsakanov TT, Ivanov PA, Palmour JW, Das MK, Hull BA. Self-Heating of 4H-SiC PiN Diodes at High Current Densities Materials Science Forum. 1007-1010. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1007  0.364
2008 O'Loughlin M, Irvine KG, Sumakeris JJ, Armentrout MH, Hull BA, Hallin C, Burk AA. Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices Mrs Proceedings. 1069. DOI: 10.1557/Proc-1069-D04-01  0.412
2008 Hull BA, Sumakeris JJ, O'Loughlin MJ, Zhang Q, Richmond J, Powell AR, Imhoff EA, Hobart KD, Rivera-Lopez A, Hefner AR. Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers Ieee Transactions On Electron Devices. 55: 1864-1870. DOI: 10.1109/Ted.2008.926655  0.442
2008 Levinshtein ME, Mnatsakanov TT, Ivanov PA, Palmour JW, Das MK, Hull BA. Self-heating and loss of thermal stability under a single current surge pulse in high-voltage 4H-SiC rectifier diodes Semiconductor Science and Technology. 23: 85011. DOI: 10.1088/0268-1242/23/8/085011  0.366
2008 Rumyantsev SL, Shur MS, Levinshtein ME, Ivanov PA, Palmour JW, Das MK, Hull BA. Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors Journal of Applied Physics. 104: 94505. DOI: 10.1063/1.3009664  0.384
2008 Levinshtein ME, Ivanov PA, Mnatsakanov TT, Palmour JW, Das MK, Hull BA. Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse Solid-State Electronics. 52: 1802-1805. DOI: 10.1016/J.Sse.2008.08.002  0.376
2007 Ivanov PA, Levinshtein ME, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA. Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process Materials Science Forum. 921-924. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.921  0.45
2007 Hull BA, Sumakeris JJ, Das MK, Richmond J, Palmour JW. Progress on the development of 10 kV 4H-SiC PIN diodes for high current/high voltage power handling applications Materials Science Forum. 895-900. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.895  0.477
2007 Ryu SH, Krishnaswami S, Hull BA, Heath B, Husna F, Richmond J, Agarwal AK, Palmour JW, Scofield JD. A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs Materials Science Forum. 775-778. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.775  0.465
2007 Sumakeris JJ, Hull BA, O'Loughlin MJ, Skowronski M, Balakrishna V. Developing an effective and robust process for manufacturing bipolar SiC power devices Materials Science Forum. 77-80. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.77  0.381
2007 Levinshtein ME, Mnatsakanov TT, Ivanov PA, Palmour JW, Das MK, Hull BA. Isothermal current–voltage characteristics of high-voltage silicon carbide rectifier p–i–n diodes at very high current densities Semiconductor Science and Technology. 22: 253-258. DOI: 10.1088/0268-1242/22/3/014  0.44
2007 Levinshtein ME, Mnatsakanov TT, Ivanov PA, Palmour JW, Das MK, Hull BA. Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes Solid-State Electronics. 51: 955-960. DOI: 10.1016/J.Sse.2007.03.005  0.375
2006 Das MK, Hull BA, Krishnaswami S, Husna F, Haney SK, Lelis AJ, Scozzie CJ, Scofield JD. Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal Materials Science Forum. 967-970. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.967  0.382
2006 Sumakeris JJ, Bergman JP, Das MK, Hallin C, Hull BA, Janzén E, Lendenmann H, O'Loughlin MJ, Paisley MJ, Ha SY, Skowronski M, Palmour JW, Carter CH. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Materials Science Forum. 141-146. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.141  0.414
2006 Hull BA, Das MK, Richmond JT, Heath B, Sumakeris JJ, Geil B, Scozzie CJ. High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications Materials Science Forum. 1355-1358. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1355  0.463
2006 Levinshtein ME, Ivanov PA, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA. High-temperature (up to 800 K) operation of 6-kV 4H-SiC junction diodes Materials Science Forum. 1339-1342. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1339  0.406
2006 Das MK, Sumakeris JJ, Hull BA, Richmond J. Evolution of Drift-Free, High Power 4H-SiC PiN Diodes Materials Science Forum. 1329-1334. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1329  0.461
2006 Ryu SH, Krishnaswami S, Hull BA, Heath B, Das MK, Richmond J, Agarwal AK, Palmour JW, Scofield JD. Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs Materials Science Forum. 1261-1264. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1261  0.488
2006 Hull BA, Ryu S, Fatima H, Richmond J, Palmour JW, Scofield J. Development of A 4H-SiC CMOS Inverter Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B13-02  0.411
2006 Sumakeris JJ, Hull BA, O'Loughlin MJ, Ha S, Skowronski M, Palmour JW, Carter CH. Do You Really Expect To Grow Epilayers On That? A Rationale For Growing Epilayers On Roughened Surfaces Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B03-06  0.34
2006 Ivanov PA, Levinshtein ME, Palmour JW, Das MK, Hull BA. High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime Solid-State Electronics. 50: 1368-1370. DOI: 10.1016/J.Sse.2006.06.018  0.431
2005 Das MK, Sumakeris JJ, Hull BA, Richmond J, Krishnaswami S, Powell AR. Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Materials Science Forum. 965-968. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.965  0.462
2005 Levinshtein ME, Ivanov PA, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA. High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes Solid-State Electronics. 49: 1228-1232. DOI: 10.1016/J.Sse.2005.04.020  0.383
2005 Hull BA, Das MK, Sumakeris JJ, Richmond JT, Krishnaswami S. Drift-free 10-kV, 20-A 4H-SiC PiN diodes Journal of Electronic Materials. 34: 341-344. DOI: 10.1007/S11664-005-0107-4  0.451
2004 Das MK, Sumakeris JJ, Hull BA, Richmond J, Krishnaswami S, Powell AR. High power, drift-free 4H-SiC PiN diodes International Journal of High Speed Electronics and Systems. 14: 860-864. DOI: 10.1142/S0129156404002958  0.443
2004 Hull BA, Mohney SE, Chowdhury U, Dupuis RD. Compositional shift in Al[sub x]Ga[sub 1−x]N beneath annealed metal contacts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 654. DOI: 10.1116/1.1676683  0.564
2004 Hull BA, Mohney SE, Chowdhury U, Dupuis RD. Ohmic contacts to p-type Al 0.45Ga 0.55N Journal of Applied Physics. 96: 7325-7331. DOI: 10.1063/1.1814169  0.603
2003 Wang SH, Mohney SE, Hull BA, Bennett BR. Design of a shallow thermally stable ohmic contact to p-type InGaSb Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 633. DOI: 10.1116/1.1545731  0.586
2002 Hull BA, Mohney SE, Chowdhury U, Dupuis RD, Gotthold D, Birkhahn R, Pophristic M. Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L12.2  0.606
2002 Mohney SE, Hull BA, Lin JY, Crofton J. Morphological study of the Al-Ti ohmic contact to p-type SiC Solid-State Electronics. 46: 689-693. DOI: 10.1016/S0038-1101(01)00327-6  0.604
2000 Hull BA, Mohney SE, Venugopalan HS, Ramer JC. Influence of oxygen on the activation of p-type GaN Applied Physics Letters. 76: 2271-2273. DOI: 10.1063/1.126318  0.541
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