| Year |
Citation |
Score |
| 2021 |
Kim GH, Lee J, Lee JY, Han J, Choi Y, Kang CJ, Kim KB, Lee W, Lim J, Cho SY. High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO. Acs Applied Materials & Interfaces. PMID 34463100 DOI: 10.1021/acsami.1c11898 |
0.439 |
|
| 2020 |
Lee S, Kang YH, Kim MS, Lee H, Cho YH, Kim M, Yoon TS, Kim HM, Kim KB. Effect of Bilayer Period of Atomic Layer Deposition on the Growth Behavior and Electrical Properties of Amorphous In-Zn-O Film. Acs Applied Materials & Interfaces. PMID 32805924 DOI: 10.1021/Acsami.0C07540 |
0.316 |
|
| 2020 |
Kim MS, Kim M, Son S, Cho SY, Lee S, Won DK, Ryu J, Bae I, Kim HM, Kim KB. Sheet Resistance Analysis of Interface-Engineered Multilayer Graphene: Mobility vs. Sheet Carrier Concentration. Acs Applied Materials & Interfaces. PMID 32400151 DOI: 10.1021/Acsami.0C04542 |
0.507 |
|
| 2020 |
Kim M, Nabeya S, Han SM, Kim MS, Lee S, Kim HM, Cho SY, Lee DJ, Kim SH, Kim KB. Selective Atomic Layer Deposition of Metals on Graphene for Transparent Conducting Electrode Application. Acs Applied Materials & Interfaces. PMID 32017528 DOI: 10.1021/Acsami.9B23261 |
0.634 |
|
| 2020 |
Lee K, Park J, Kang JH, Lee TG, Kim HM, Kim KB. Surface Modification of Solid-State Nanopore by Plasma-Polymerized Chemical Vapor Deposition of Poly(ethylene glycol) for Stable Device Operation. Nanotechnology. PMID 31945750 DOI: 10.1088/1361-6528/Ab6Cdb |
0.316 |
|
| 2020 |
Kim MS, Cho SY, Kim M, Kim KJ, Lee SH, Kim HM, Kim KB. Comparison of Growth Behavior and Electrical Properties of Graphene Grown on Solid and Liquid Copper by Chemical Vapor Deposition. Journal of Nanoscience and Nanotechnology. 20: 316-323. PMID 31383173 DOI: 10.1166/Jnn.2020.17279 |
0.425 |
|
| 2019 |
Osgood R, Kang M, Kim KB, Ait-El-Aoud Y, Dinneen S, Kooi S, Fernandes GE, Xu JM. Nanorectenna spectrally-selective plasmonic hot electron response to visible-light lasers. Nanotechnology. PMID 31825904 DOI: 10.1088/1361-6528/Ab60C9 |
0.471 |
|
| 2019 |
Lee S, Kim M, Cho SY, Lee DJ, Kim HM, Kim KB. Electrical properties of graphene/In2O3 bilayer with remarkable uniformity as transparent conducting electrode. Nanotechnology. PMID 31747645 DOI: 10.1088/1361-6528/Ab599C |
0.642 |
|
| 2019 |
Kim M, Nabeya S, Nandi DK, Suzuki K, Kim HM, Cho SY, Kim KB, Kim SH. Atomic Layer Deposition of Nickel Using a Heteroleptic Ni Precursor with NH and Selective Deposition on Defects of Graphene. Acs Omega. 4: 11126-11134. PMID 31460211 DOI: 10.1021/acsomega.9b01003 |
0.479 |
|
| 2016 |
Kim M, Kim KJ, Lee SJ, Kim HM, Cho SY, Kim MS, Kim SH, Kim KB. Highly Stable and Effective Doping of Graphene by Selective Atomic Layer Deposition of Ruthenium. Acs Applied Materials & Interfaces. PMID 27936584 DOI: 10.1021/Acsami.6B12622 |
0.471 |
|
| 2016 |
Kwon KC, Hong K, Van Le Q, Lee SY, Choi J, Kim KB, Kim SY, Jang HW. Inhibition of Ion Migration for Reliable Operation of Organolead Halide Perovskite-Based Metal/Semiconductor/Metal Broadband Photodetectors Advanced Functional Materials. DOI: 10.1002/Adfm.201600405 |
0.305 |
|
| 2015 |
Lim MC, Lee MH, Kim KB, Jeon TJ, Kim YR. A Mask-Free Passivation Process for Low Noise Nanopore Devices. Journal of Nanoscience and Nanotechnology. 15: 5971-7. PMID 26369183 DOI: 10.1166/Jnn.2015.10500 |
0.706 |
|
| 2015 |
Cho SY, Kim MS, Kim M, Kim KJ, Kim HM, Lee DJ, Lee SH, Kim KB. Self-assembly and continuous growth of hexagonal graphene flakes on liquid Cu. Nanoscale. PMID 26172584 DOI: 10.1039/C5Nr03352G |
0.631 |
|
| 2015 |
Cho SJ, Cho CH, Kim KB, Lee MH, Kim JH, Lee S, Cho J, Jung S, Kim DM, Shim YB. Interference Reduction in Glucose Detection by Redox Potential Tuning: New Glucose Meter Development. Analytical Sciences : the International Journal of the Japan Society For Analytical Chemistry. 31: 705-10. PMID 26165295 DOI: 10.2116/analsci.31.705 |
0.636 |
|
| 2014 |
Lee MH, Kumar A, Park KB, Cho SY, Kim HM, Lim MC, Kim YR, Kim KB. A low-noise solid-state nanopore platform based on a highly insulating substrate. Scientific Reports. 4: 7448. PMID 25502421 DOI: 10.1038/Srep07448 |
0.712 |
|
| 2014 |
Wahab F, Fernandes GE, Kim JH, Jung S, Kim K, Sayyad MH, Xu J. High Seebeck Coefficient in Solution-Grown PbS Films Journal of Electronic Materials. 43: 348-352. DOI: 10.1007/S11664-013-2862-Y |
0.513 |
|
| 2014 |
Lee MH, Lee JH, Kim HM, Kim YR, Jeon TJ, Eugene Pak Y, Kim KB. Leakage current in a Si-based nanopore structure and its influence on noise characteristics Microfluidics and Nanofluidics. 16: 123-130. DOI: 10.1007/S10404-013-1192-Y |
0.698 |
|
| 2013 |
Kumar A, Park KB, Kim HM, Kim KB. Noise and its reduction in graphene based nanopore devices. Nanotechnology. 24: 495503. PMID 24240186 DOI: 10.1088/0957-4484/24/49/495503 |
0.326 |
|
| 2013 |
Cho S, Kim K, Kim H, Lee D, Lee M, Kim K. Gas transport controlled synthesis of graphene by employing a micro-meter scale gap jig Rsc Advances. 3: 26376. DOI: 10.1039/C3Ra43066A |
0.756 |
|
| 2012 |
Hu Q, Lee HH, Jeong DY, Kim YS, Kim KB, Xu J, Yoon TS. Reflectivity spectra and colors of porous anodic aluminum oxide containing silver nanoparticles by plasmonic absorption. Journal of Nanoscience and Nanotechnology. 12: 1979-83. PMID 22755008 DOI: 10.1166/Jnn.2012.5668 |
0.46 |
|
| 2012 |
Jung S, Kim KB, Fernandes G, Kim JH, Wahab F, Xu J. Enhanced thermoelectric power in nanopatterned carbon nanotube film. Nanotechnology. 23: 135704. PMID 22418392 DOI: 10.1088/0957-4484/23/13/135704 |
0.505 |
|
| 2012 |
Cho SY, Kim HM, Lee MH, Lee DJ, Kim KB. Single-step formation of a graphene-metal hybrid transparent and electrically conductive film. Nanotechnology. 23: 115301. PMID 22383433 DOI: 10.1088/0957-4484/23/11/115301 |
0.77 |
|
| 2012 |
Kim BJ, Lee DJ, Kim YR, Lim SY, Bae JH, Kim KB, Chung TD. Gold microshell tip for in situ electrochemical Raman spectroscopy. Advanced Materials (Deerfield Beach, Fla.). 24: 421-4. PMID 22174102 DOI: 10.1002/Adma.201103644 |
0.575 |
|
| 2012 |
Yoo JW, Hu Q, Baek Y, Choi YJ, Kang CJ, Lee HH, Lee D, Kim H, Kim K, Yoon T. Resistive switching characteristics of maghemite nanoparticle assembly on Al and Pt electrodes on a flexible substrate Journal of Physics D: Applied Physics. 45: 225304. DOI: 10.1088/0022-3727/45/22/225304 |
0.573 |
|
| 2012 |
Kwon CW, Lee JI, Kim KB, Lee HW, Lee JH, Son JW. The thermomechanical stability of micro-solid oxide fuel cells fabricated on anodized aluminum oxide membranes Journal of Power Sources. 210: 178-183. DOI: 10.1016/J.Jpowsour.2012.03.020 |
0.303 |
|
| 2011 |
Kim HM, Lee MH, Kim KB. Theoretical and experimental study of nanopore drilling by a focused electron beam in transmission electron microscopy. Nanotechnology. 22: 275303. PMID 21597159 DOI: 10.1088/0957-4484/22/27/275303 |
0.678 |
|
| 2011 |
Lee DJ, Yim SS, Kim KS, Kim SH, Kim KB. Controlling spatial density and size of nanocrystals by two-step atomic layer deposition. Nanotechnology. 22: 095305. PMID 21270488 DOI: 10.1088/0957-4484/22/9/095305 |
0.595 |
|
| 2011 |
Lee M, Kim H, Cho S, Lim K, Park S, Jong Lee J, Kim K. Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.2) using electron-beam lithography Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 061602. DOI: 10.1116/1.3646469 |
0.725 |
|
| 2011 |
Kim K, Lee C, Choi J. Catalyst-Free Direct Growth of Triangular Nano-Graphene on All Substrates Journal of Physical Chemistry C. 115: 14488-14493. DOI: 10.1021/Jp2017709 |
0.304 |
|
| 2011 |
Kwon CW, Son JW, Lee JH, Kim HM, Lee HW, Kim KB. High-performance micro-solid oxide fuel cells fabricated on nanoporous anodic aluminum oxide templates Advanced Functional Materials. 21: 1154-1159. DOI: 10.1002/Adfm.201002137 |
0.384 |
|
| 2010 |
Nam SW, Lee MH, Lee SH, Lee DJ, Rossnagel SM, Kim KB. Sub-10-nm nanochannels by self-sealing and self-limiting atomic layer deposition. Nano Letters. 10: 3324-9. PMID 20687522 DOI: 10.1021/Nl100999E |
0.767 |
|
| 2010 |
Lee D, Yim SS, Lyeo HK, Kwon MH, Kang D, Jun HG, Nam SW, Kim KB. Formation of Ge2 Sb2 Te5 - TiOx nanostructures for phase change random access memory applications Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3264734 |
0.33 |
|
| 2010 |
Hu Q, Seo I, Zhang Z, Lee S, Kim H, Kim S, Kim Y, Lee HH, Xie Y, Kim K, Yoon T. Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation Thin Solid Films. 518. DOI: 10.1016/J.Tsf.2009.10.092 |
0.313 |
|
| 2010 |
Lee D, Kim H, Kwon J, Choi H, Kim S, Kim K. Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films Advanced Functional Materials. 21: 448-455. DOI: 10.1002/Adfm.201001342 |
0.629 |
|
| 2009 |
Lim K, Wi JS, Nam SW, Park SY, Lee JJ, Kim KB. The fabrication scheme of a high resolution and high aspect ratio UV-nanoimprint mold. Nanotechnology. 20: 495303. PMID 19893150 DOI: 10.1088/0957-4484/20/49/495303 |
0.309 |
|
| 2009 |
Kim KB, Lee DJ, Yeo CW, Shin JG, Bae SK. Simultaneous quantification of rosiglitazone and its two major metabolites, N-desmethyl and p-hydroxy rosiglitazone in human plasma by liquid chromatography/tandem mass spectrometry: application to a pharmacokinetic study. Journal of Chromatography. B, Analytical Technologies in the Biomedical and Life Sciences. 877: 1951-6. PMID 19477697 DOI: 10.1016/j.jchromb.2009.05.001 |
0.481 |
|
| 2009 |
Nam SW, Rooks MJ, Kim KB, Rossnagel SM. Ionic field effect transistors with sub-10 nm multiple nanopores. Nano Letters. 9: 2044-8. PMID 19397298 DOI: 10.1021/Nl900309S |
0.333 |
|
| 2009 |
Nam S, Rooks MJ, Yang JKW, Berggren KK, Kim H, Lee M, Kim K, Sim JH, Yoon DY. Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: 2635. DOI: 10.1116/1.3245991 |
0.666 |
|
| 2009 |
Lee H, Wi J, Nam S, Kim H, Kim K. Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning Journal of Vacuum Science & Technology B. 27: 188-192. DOI: 10.1116/1.3049482 |
0.312 |
|
| 2009 |
Yoon T, Kim H, Kim K, Ryu DY, Russell TP, Zhao Z, Liu J, Xie Y. Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates Physica Status Solidi (B). 246: 721-724. DOI: 10.1002/Pssb.200880589 |
0.328 |
|
| 2008 |
Wi JS, Lee HS, Lim K, Nam SW, Kim HM, Park SY, Lee JJ, Hong CD, Jin S, Kim KB. Fabrication of silicon nanopillar teradot arrays by electron-beam patterning for nanoimprint molds. Small (Weinheim An Der Bergstrasse, Germany). 4: 2118-22. PMID 18985672 DOI: 10.1002/Smll.200800625 |
0.303 |
|
| 2008 |
Yim S, Lee D, Kim K, Lee M, Kim S, Kim K. Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application Electrochemical and Solid-State Letters. 11: K89. DOI: 10.1149/1.2952432 |
0.599 |
|
| 2008 |
Kim S, Kim HT, Yim S, Lee D, Kim K, Kim H, Kim K, Sohn H. A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu Journal of the Electrochemical Society. 155: H589. DOI: 10.1149/1.2940447 |
0.606 |
|
| 2008 |
Lee D, Yim S, Kim K, Kim S, Kim K. Formation of Ru Nanotubes by Atomic Layer Deposition onto an Anodized Aluminum Oxide Template Electrochemical and Solid-State Letters. 11: K61. DOI: 10.1149/1.2901542 |
0.62 |
|
| 2008 |
Kim S, Yim S, Lee D, Kim K, Kim H, Kim K, Sohn H. Diffusion Barriers Between Al and Cu for the Cu Interconnect of Memory Devices Electrochemical and Solid-State Letters. 11: H127. DOI: 10.1149/1.2890092 |
0.591 |
|
| 2008 |
Yim S, Lee D, Kim K, Kim S, Yoon T, Kim K. Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition Journal of Applied Physics. 103: 113509. DOI: 10.1063/1.2938052 |
0.622 |
|
| 2007 |
Kim ES, Kim KB. Excimer laser crystallization of amorphous silicon film with artificially designed spatial intensity beam profile Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2761841 |
0.315 |
|
| 2007 |
Nam S, Lee T, Wi J, Lee D, Lee H, Jin K, Lee M, Kim H, Kim K. Electron-Beam Lithography Patterning of Ge[sub 2]Sb[sub 2]Te[sub 5] Nanostructures Using Hydrogen Silsesquioxane and Amorphous Si Intermediate Layer Journal of the Electrochemical Society. 154: H844. DOI: 10.1149/1.2756992 |
0.718 |
|
| 2007 |
Ahn D, Lee T, Lee D, Yim S, Wi J, Jin K, Lee M, Kim K, Kang D, Jeong H, Cheong B. High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1Complete Solid Solution Japanese Journal of Applied Physics. 46: 5719-5723. DOI: 10.1143/Jjap.46.5719 |
0.681 |
|
| 2007 |
Yoon T, Kim H, Kim K, Ryu DY, Russell TP, Zhao Z, Liu J, Xie Y. Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO2∕Si substrates by high-resolution transmission electron microscopy Journal of Applied Physics. 102: 104306. DOI: 10.1063/1.2812610 |
0.348 |
|
| 2006 |
Kim KB, Lee MH, Sok SR. [The effect of music therapy on anxiety and depression in patients undergoing hemodialysis]. Taehan Kanho Hakhoe Chi. 36: 321-9. PMID 16691049 |
0.621 |
|
| 2006 |
Lee YI, Cho JY, Kim MH, Kim KB, Lee DJ, Lee KS. Effects of exercise training on pathological cardiac hypertrophy related gene expression and apoptosis. European Journal of Applied Physiology. 97: 216-24. PMID 16583233 DOI: 10.1007/s00421-006-0161-5 |
0.465 |
|
| 2006 |
Kim J, Bae J, Anderson WA, Kim H, Kim K. Metal-Induced Nickel Silicide Nanowire Growth Mechanism in the Solid State Reaction Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A21-07 |
0.325 |
|
| 2006 |
Kim J, Bae JU, Anderson WA, Kim HM, Kim KB. Solid-state growth of nickel silicide nanowire by the metal-induced growth method Journal of Materials Research. 21: 2936-2940. DOI: 10.1557/Jmr.2006.0364 |
0.319 |
|
| 2006 |
Park S, Lee Y, Lee J, Kim K. The Formation of Porous Anodic Aluminum Oxide Confined in μm -Size Contact and Trench Patterns Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2360018 |
0.327 |
|
| 2006 |
Wi JS, Lee TY, Jin KB, Hong DH, Shin KH, Kim KB. Electron-beam lithography of Co/Pd multilayer with hydrogen silsesquioxane and amorphous Si intermediate layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2616-2620. DOI: 10.1116/1.2366615 |
0.353 |
|
| 2006 |
Lee T, Yim S, Lee D, Lee M, Ahn D, Kim K. Separate domain formation in Ge2Sb2Te5–SiOx mixed layer Applied Physics Letters. 89: 163503. DOI: 10.1063/1.2362981 |
0.69 |
|
| 2006 |
Yim S, Lee M, Kim K, Kim K. Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications Applied Physics Letters. 89: 93115. DOI: 10.1063/1.2338793 |
0.367 |
|
| 2006 |
Kim KS, Lee MS, Yim SS, Kim HM, Kim KB, Park HS, Koh W, Li WM, Stokhof M, Sprey H. Evaluation of integrity and barrier performance of atomic layer deposited WNxCy films on plasma enhanced chemical vapor deposited SiO2 for Cu metallization Applied Physics Letters. 89. DOI: 10.1063/1.2338768 |
0.371 |
|
| 2004 |
Kim KB, Kim MH, Lee DJ. The effect of exercise in cool, control and hot environments on cardioprotective HSP70 induction. Journal of Physiological Anthropology and Applied Human Science. 23: 225-30. PMID 15599066 DOI: JST.JSTAGE/jpa/23.225 |
0.474 |
|
| 2004 |
Kim H, Yim S, Kim K, Kang D, Moon S, Kim Y, Lee H. The reaction sequence and microstructure evolution of an MgB2 layer during ex situ annealing of amorphous boron film Journal of Materials Research. 19: 409-412. DOI: 10.1557/Jmr.2004.19.2.409 |
0.338 |
|
| 2004 |
Kim H, Yim S, Kim K, Moon S, Kim Y, Kang D. Growth kinetics of MgB2 layer and interfacial MgO layer during ex situ annealing of amorphous boron film Journal of Materials Research. 19: 3081-3089. DOI: 10.1557/Jmr.2004.0383 |
0.35 |
|
| 2004 |
Kim S, Oh SS, Kim H, Kang D, Kim K, Li W, Haukka S, Tuominen M. Characterization of Atomic Layer Deposited WNxCy Thin Film as a Diffusion Barrier for Copper Metallization Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1652054 |
0.368 |
|
| 2004 |
Kang D, Ahn D, Kwon M, Kwon H, Kim K, Lee KS, Cheong B. Lower voltage operation of a phase change memory device with a highly resistive TiON layer Japanese Journal of Applied Physics. 43: 5243-5244. DOI: 10.1143/Jjap.43.5243 |
0.32 |
|
| 2004 |
Moon S, Kim H, Yim S, Kim K, Kim Y, Yoo S, Lee H. Superconducting properties and microstructures of MgB2 thin films prepared by the ex situ annealing process Superconductor Science and Technology. 17. DOI: 10.1088/0953-2048/17/2/054 |
0.363 |
|
| 2004 |
Yoon T, Oh J, Park S, Kim V, Jung BG, Min S, Park J, Hyeon T, Kim K. Single and Multiple‐Step Dip‐Coating of Colloidal Maghemite (γ‐Fe2O3) Nanoparticles onto Si, Si3N4, and SiO2 Substrates Advanced Functional Materials. 14: 1062-1068. DOI: 10.1002/Adfm.200305088 |
0.3 |
|
| 2003 |
Kim S, Nam KT, Datta A, Kim H, Kim K, Kang D. Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 804. DOI: 10.1116/1.1562645 |
0.302 |
|
| 2003 |
Kim S, Oh SS, Kim K, Kang D, Li W, Haukka S, Tuominen M. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization Applied Physics Letters. 82: 4486-4488. DOI: 10.1063/1.1585111 |
0.369 |
|
| 2002 |
Min S, Jung B, Choi J, Kim B, Kim D, Shin D, Cho S, Kim K. Microstructure and Thermal Stability of High Permittivity Ta 2 O 5 Korean Journal of Materials Research. 12: 814-819. DOI: 10.3740/Mrsk.2002.12.10.814 |
0.335 |
|
| 2002 |
Cho S, Kim B, Kim H, Chun IK, Kim K. Metallorganic Chemical Vapor Deposition of TaO x N y as a High-Dielectric-Constant Material for Next-Generation Devices Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1507786 |
0.342 |
|
| 2002 |
Yoon T, Lee D, Kim K, Min S. Initial Stage of Amorphous Si and Si0.7Ge0.3 Deposition on SiO2 by Low-Pressure Chemical Vapor Deposition Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1470658 |
0.352 |
|
| 2002 |
Yoon TS, Kim KB. Ge-rich Si1-xGex nanocrystal formation by the oxidation of an as-deposited thin amorphous Si0.7Ge0.3 layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 631-634. DOI: 10.1116/1.1458955 |
0.353 |
|
| 2002 |
Kim S, Nam KT, Datta A, Kim K. Failure mechanism of a multilayer (TiN/Al/TiN) diffusion barrier between copper and silicon Journal of Applied Physics. 92: 5512-5519. DOI: 10.1063/1.1509102 |
0.338 |
|
| 2002 |
Datta A, Nam KT, Kim S, Kim K. Optimization of Al interlayer thickness for the multilayer diffusion barrier scheme in Cu metallization Journal of Applied Physics. 92: 1099-1105. DOI: 10.1063/1.1486039 |
0.346 |
|
| 2002 |
Kim S, Im S, Kim K. The effect of ion beam bombardment on the properties of Ta(C)N films deposited from pentakis-diethylamido-tantalum Thin Solid Films. 415: 177-186. DOI: 10.1016/S0040-6090(02)00505-9 |
0.34 |
|
| 2001 |
Lee T, Cheong B, Lee TS, Park SJ, Kim WM, Lee KS, Kim K, Kim SG. A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording Mrs Proceedings. 674. DOI: 10.1557/Proc-674-V1.7 |
0.301 |
|
| 2001 |
Chon U, Kim K, Jang HM, Yi G. Fatigue-free samarium-modified bismuth titanate (Bi4−xSmxTi3O12) film capacitors having large spontaneous polarizations Applied Physics Letters. 79: 3137-3139. DOI: 10.1063/1.1415353 |
0.324 |
|
| 2001 |
Nam KT, Datta A, Kim S, Kim K. Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization Applied Physics Letters. 79: 2549-2551. DOI: 10.1063/1.1409594 |
0.306 |
|
| 2000 |
Ryu M, Kwon J, Kim K. Solid Phase Crystallization (SPC) Behavior of Amorphous Si Bilayer Films with Different Concentration of Oxygen: Surface vs. Interface-nucleation Mrs Proceedings. 621. DOI: 10.1557/Proc-621-Q6.3.1 |
0.305 |
|
| 2000 |
Park K, Kim S, Kim K. Effect of Ion Bombardment during Chemical Vapor Deposition of TiN Films Journal of the Electrochemical Society. 147: 2711-2717. DOI: 10.1149/1.1393594 |
0.323 |
|
| 2000 |
Park S, Kim H, Kim K, Min S. Metallorganic Chemical Vapor Deposition of Ru and RuO2 Using Ruthenocene Precursor and Oxygen Gas Journal of the Electrochemical Society. 147: 203-209. DOI: 10.1149/1.1393175 |
0.32 |
|
| 2000 |
Yoon T, Kwon J, Lee D, Kim K, Min S, Chae D, Kim DH, Lee JD, Park B, Lee HJ. High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2 Journal of Applied Physics. 87: 2449-2453. DOI: 10.1063/1.372200 |
0.375 |
|
| 1999 |
Cho S, Kim K, Min S, Shin H, Kimd S. Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization Journal of the Electrochemical Society. 146: 3724-3730. DOI: 10.1149/1.1392540 |
0.343 |
|
| 1999 |
Kim S, Chung D, Park K, Kim K, Min S. A Comparative Study of Film Properties of Chemical Vapor Deposited TiN Films as Diffusion Barriers for Cu Metallization Journal of the Electrochemical Society. 146: 1455-1460. DOI: 10.1149/1.1391785 |
0.336 |
|
| 1999 |
Park S, Kim H, Kim K, Min S. A Novel Process to Improve the Surface Roughness of RuO2 Film Deposited by Metallorganic Chemical Vapor Deposition Electrochemical and Solid State Letters. 1: 262-264. DOI: 10.1149/1.1390706 |
0.31 |
|
| 1999 |
Park S, Kim H, Kim K, Min S. RuO2 thin film fabrication with plasma-enhanced chemical vapor deposition Thin Solid Films. 341: 52-54. DOI: 10.1016/S0040-6090(98)01523-5 |
0.332 |
|
| 1998 |
Cho S, Kim K, Min S, Shin H. Chemical Vapor Deposition of Tantalum Nitride Films Using Pentakis(Diethylamido)Tantalum and Ammonia Mrs Proceedings. 514: 531. DOI: 10.1557/Proc-514-531 |
0.318 |
|
| 1998 |
Park K, Kim S, Kim K. Ion Beam Induced Metallorganic Chemical Vapor Deposition of Titanium Nitride Films as a Diffusion Barrier Between Cu and Si Mrs Proceedings. 514. DOI: 10.1557/Proc-514-401 |
0.331 |
|
| 1998 |
Kim T, Ryu M, Kim K. A Comparison of the Kinetics and the Evolution of Microstructure of the Solid Phase Crystallized a-(Si0.7Ge0.3/Si) and a-(Si/Si0.7Ge0.3) Bilayer Films; Interface versus Surface Nucleated Films Japanese Journal of Applied Physics. 37. DOI: 10.1143/Jjap.37.L108 |
0.328 |
|
| 1997 |
Ryu M, Hwang S, Kim T, Kim K, Min S. The effect of surface nucleation on the evolution of crystalline microstructure during solid phase crystallization of amorphous Si films on SiO2 Applied Physics Letters. 71: 3063-3065. DOI: 10.1063/1.119437 |
0.333 |
|
| 1996 |
Kim J, Ryu M, Kim T, Kim K, Kim S. Effects of Germanium on Grain size and surface roughness of the solid phase crystallized polycrystalline Si 1−x Ge x films Mrs Proceedings. 424: 255. DOI: 10.1557/Proc-424-255 |
0.347 |
|
| 1996 |
Kim J, Ryu M, Kim K, Kim S. Low Pressure Chemical Vapor Deposition of Si1 − x Ge x Films Using Si2 H 6 and GeH4 Source Gases Journal of the Electrochemical Society. 143: 363-367. DOI: 10.1149/1.1836438 |
0.334 |
|
| 1996 |
Park K, Kim K, Raaijmakers IJMM, Ngan K. The Effect of Density and Microstructure on the Performance of TiN Barrier Films in Cu Metallization Journal of Applied Physics. 80: 5674-5681. DOI: 10.1063/1.363620 |
0.338 |
|
| 1996 |
Kim D, Cho S, Kim K, Kim JJ, Park JW, Kim JJ. Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis‐dimethyl‐amino titanium in the Cu/TiN/Si structure Applied Physics Letters. 69: 4182-4184. DOI: 10.1063/1.116979 |
0.331 |
|
| 1995 |
Hwang C, Ryu M, Kim K, Lee S, Kim C. Solid phase crystallization of amorphous Si1−xGex films deposited on SiO2 by molecular beam epitaxy Journal of Applied Physics. 77: 3042-3047. DOI: 10.1063/1.358654 |
0.333 |
|
| 1994 |
Hwang C, Ryu M, Kim K, Lee S, Kim C. Crystallization Behavior of the Amorphous Si 1-x Ge x Films Deposited on SiO 2 by Molecular Beam Epitaxy(MBE) Mrs Proceedings. 345. DOI: 10.1557/Proc-345-149 |
0.315 |
|
| 1990 |
Liao JC, Kim K, Maillot P. In-Situ Doped Polycrystalline Silicon Deposited by Rapid Thermal Chemical Vapor Deposition Using Tertiarybutylphosphine Mrs Proceedings. 182. DOI: 10.1557/Proc-182-15 |
0.372 |
|
| 1989 |
Kim K, Sinclair R. In-Situannealing Transmission Electron Microscopy(Tem) Study of the Ti/GaAs Interfacial Reactions Mrs Proceedings. 148. DOI: 10.1557/Proc-148-21 |
0.493 |
|
| 1989 |
Raaijmakers IJMM, Ijzendoorn LJv, Theunissen AML, Kim K. Nucleation phenomena during titanium silicon reaction Mrs Proceedings. 146. DOI: 10.1557/Proc-146-267 |
0.313 |
|
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