Year |
Citation |
Score |
2019 |
Xue D, Myles CW. Electronic Property and Negative Thermal Expansion Behavior of SiGe ( = 8, 32, 40, 104) Clathrate Solid Solution from First Principles. Nanomaterials (Basel, Switzerland). 9. PMID 31163710 DOI: 10.3390/Nano9060851 |
0.575 |
|
2019 |
Xue D, Myles CW. First-Principles Analysis of Vibrational Properties of Type II SiGe Alloy Clathrates. Nanomaterials (Basel, Switzerland). 9. PMID 31083355 DOI: 10.3390/Nano9050723 |
0.6 |
|
2019 |
Xue D, Myles CW. First-Principles Study of the Electronic, Vibrational Properties and Anharmonic Effects of Some Si-Based Type-II Binary Clathrates. Materials (Basel, Switzerland). 12. PMID 30754639 DOI: 10.3390/Ma12030536 |
0.566 |
|
2019 |
Zahid H, Xue D, Myles C. First Principles Study of the Vibrational and Thermal Properties of Sn-Based Type II Clathrates, CsxSn136 (0 ≤ x ≤ 24) and Rb24Ga24Sn112 Inorganics. 7: 74. DOI: 10.3390/INORGANICS7060074 |
0.551 |
|
2019 |
Xue D, Myles CW. First-Principles Investigation on Type-II Aluminum-Substituted Ternary and Quaternary Clathrate Semiconductors R8Al8Si128 (R = Cs, Rb), Cs8Na16Al24Si112 Applied Sciences. 9: 125. DOI: 10.3390/App9010125 |
0.566 |
|
2017 |
Norouzzadeh P, Myles CW, Vashee D. Phonon Dynamics in Type VIII Silicon Clathrates: Beyond the Rattler Concept Physical Review B - Condensed Matter and Materials Physics.. 95: 1952061. DOI: 10.1103/Physrevb.95.195206 |
0.741 |
|
2016 |
Xue D, Myles CW, Higgins C. Effect of Guest Atom Composition on the Structural and Vibrational Properties of the Type II Clathrate-Based Materials AxSi136, AxGe136 and AxSn136 (A = Na, K, Rb, Cs; 0 ≤ x ≤ 24). Materials (Basel, Switzerland). 9. PMID 28773812 DOI: 10.3390/Ma9080691 |
0.75 |
|
2016 |
Norouzzadeh P, Myles CW. A first-principles lattice dynamical study of type-I, type-II, and type-VIII silicon clathrates Journal of Materials Science. 1-11. DOI: 10.1007/S10853-016-9766-1 |
0.719 |
|
2015 |
Norouzzadeh P, Krasinski JS, Myles CW, Vashaee D. Type VIII Si based clathrates: prospects for a giant thermoelectric power factor. Physical Chemistry Chemical Physics : Pccp. 17: 8850-9. PMID 25744661 DOI: 10.1039/C5Cp00729A |
0.737 |
|
2014 |
Norouzzadeh P, Myles CW, Vashaee D. Prediction of giant thermoelectric power factor in type-VIII clathrate Si46. Scientific Reports. 4: 7028. PMID 25391971 DOI: 10.1038/Srep07028 |
0.716 |
|
2014 |
Norouzzadeh P, Myles CW, Vashaee D. Structural, electronic, phonon and thermodynamic properties of hypothetical type-VIII clathrates Ba8Si46 and Ba8Al 16Si30 investigated by first principles Journal of Alloys and Compounds. 587: 474-480. DOI: 10.1016/J.Jallcom.2013.10.190 |
0.761 |
|
2013 |
Norouzzadeh P, Myles CW, Vashaee D. Prediction of a large number of electron pockets near the band edges in type-VIII clathrate Si46 and its physical properties from first principles. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 475502. PMID 24172765 DOI: 10.1088/0953-8984/25/47/475502 |
0.744 |
|
2013 |
Norouzzadeh P, Myles CW, Vashaee D. Electronic, elastic, vibrational, and thermodynamic properties of type-VIII clathrates Ba8Ga16Sn30 and Ba 8Al16Sn30 by first principles Journal of Applied Physics. 114. DOI: 10.1063/1.4826213 |
0.742 |
|
2010 |
Beekman M, Nenghabi EN, Biswas K, Myles CW, Baitinger M, Grin Y, Nolas GS. Framework contraction in Na-stuffed Si(cF136). Inorganic Chemistry. 49: 5338-40. PMID 20503981 DOI: 10.1021/Ic1005049 |
0.782 |
|
2008 |
Nenghabi EN, Myles CW. First-principles calculations of the vibrational and thermal properties of the type-I clathrates Ba8 Ga16 Six Ge30-x and Sr8 Ga16 Six Ge30-x Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.195202 |
0.801 |
|
2008 |
Nenghabi EN, Myles CW. First principles calculations of the structural and electronic properties of the type-I semiconductor clathrate alloys Ba8 Ga16 Six Ge30-x and Sr8 Ga16 Six Ge30-x Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.205203 |
0.79 |
|
2008 |
Nenghabi EN, Myles CW. First principles calculations of the structural, electronic and vibrational properties of the clathrates Ba8Al16Ge30 and Ba8Al16Si30 Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/41/415214 |
0.801 |
|
2008 |
Biswas K, Myles CW, Sanati M, Nolas GS. Thermal properties of guest-free Si136 and Ge136 clathrates: A first-principles study Journal of Applied Physics. 104. DOI: 10.1063/1.2960580 |
0.653 |
|
2007 |
Biswas K, Myles CW. Electronic and vibrational properties of framework-substituted type-II silicon clathrates Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.245205 |
0.637 |
|
2007 |
Biswas K, Myles CW. Density-functional investigation of Na16A8Ge 136 (A = Rb,Cs) clathrates Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/46/466206 |
0.625 |
|
2007 |
Myles CW, Biswas K, Nenghabi E. Rattling "guest" impurities in Si and Ge clathrate semiconductors Physica B: Condensed Matter. 401: 695-698. DOI: 10.1016/J.Physb.2007.09.054 |
0.799 |
|
2006 |
Biswas K, Myles CW. Electronic structure of the Na16 Rb8 Si136 and K16 Rb8 Si136 clathrates Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.115113 |
0.664 |
|
2003 |
Myles CW, Dong J, Sankey OF. Rattling guest atoms in Si, Ge, and Sn-based type-II clathrate materials Physica Status Solidi (B) Basic Research. 239: 26-34. DOI: 10.1002/Pssb.200303236 |
0.586 |
|
2003 |
Kambour KE, Hjalmarson HP, Myles CW. Theory of optically-triggered electrical breakdown of semiconductors Conference On Electrical Insulation and Dielectric Phenomena (Ceidp), Annual Report. 345-348. |
0.716 |
|
2002 |
Myles CW, Dong J, Sankey OF, Kendziora CA, Nolas GS. Vibrational properties of tin clathrate materials Physical Review B - Condensed Matter and Materials Physics. 65: 2352081-23520810. DOI: 10.1103/Physrevb.65.235208 |
0.556 |
|
2002 |
Nolas GS, Kendziora CA, Gryko J, Dong J, Myles CW, Poddar A, Sankey OF. Raman scattering study of stoichiometric Si and Ge type II clathrates Journal of Applied Physics. 92: 7225-7230. DOI: 10.1063/1.1523146 |
0.57 |
|
2002 |
Myles CW, Ha BC, Park YK. Large supercell molecular dynamics study of defect formation in hydrogenated amorphous silicon Journal of Physics and Chemistry of Solids. 63: 1691-1698. DOI: 10.1016/S0022-3697(01)00255-4 |
0.315 |
|
2001 |
Dong J, Sankey OF, Myles CW. Theoretical study of the lattice thermal conductivity in Ge framework semiconductors. Physical Review Letters. 86: 2361-4. PMID 11289929 DOI: 10.1103/Physrevlett.86.2361 |
0.564 |
|
2001 |
Myles CW, Dong J, Sankey OF. Structural and electronic properties of tin clathrate materials Physical Review B - Condensed Matter and Materials Physics. 64: 1652021-16520211. DOI: 10.1103/Physrevb.64.165202 |
0.585 |
|
2001 |
Dong J, Sankey OF, Myles CW, Ramachandran GK, McMillan PF, Gryko J. Theoretical evaluation of the thermal conductivity in framework (clathrate) semiconductors Proceedings - Ieee International Symposium On Circuits and Systems. 4: Z611-Z616. |
0.44 |
|
2000 |
Kambour K, Kang S, Myles CW, Hjalmarson HP. Steady-state properties of lock-on current filaments in gaas Ieee Transactions On Plasma Science. 28: 1491-1496. DOI: 10.1109/27.901221 |
0.522 |
|
2000 |
Myles CW, Li WG. Deep levels including lattice relaxation: First- and second-neighbor effects Journal of Physics and Chemistry of Solids. 61: 1855-1864. DOI: 10.1016/S0022-3697(00)00068-8 |
0.801 |
|
2000 |
Kang S, Myles CW. Effect of deep level impact ionization on avalanche breakdown in semiconductor p-n junctions Physica Status Solidi (a) Applied Research. 181: 219-229. DOI: 10.1002/1521-396X(200009)181:1<219::Aid-Pssa219>3.0.Co;2-O |
0.564 |
|
1995 |
Park YK, Estreicher SK, Myles CW, Fedders PA. Molecular-dynamics study of the vacancy and vacancy-hydrogen interactions in silicon. Physical Review. B, Condensed Matter. 52: 1718-1723. PMID 9981237 DOI: 10.1103/Physrevb.52.1718 |
0.645 |
|
1995 |
Park YK, Myles CW. Molecular-dynamics study of defect formation in a-Si:H. Physical Review. B, Condensed Matter. 51: 1671-1679. PMID 9978887 DOI: 10.1103/Physrevb.51.1671 |
0.538 |
|
1993 |
Park YK, Myles CW. Semiempirical total-energy functional for silicon-hydrogen interactions in solids. Physical Review. B, Condensed Matter. 48: 17086-17091. PMID 10008312 DOI: 10.1103/Physrevb.48.17086 |
0.557 |
|
1993 |
Li WG, Myles CW. Deep-level wave functions including lattice-relaxation effects. Physical Review. B, Condensed Matter. 47: 4281-4288. PMID 10006573 DOI: 10.1103/Physrevb.47.4281 |
0.79 |
|
1992 |
Myles CW, Li WG. Lattice Relaxation Effects on Deep Levels: Molecular Dynamics Calculations Materials Science Forum. 505-510. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.505 |
0.324 |
|
1992 |
Myles CW. Microhardness of Hg-containing II–VI alloys Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10: 1454. DOI: 10.1116/1.586271 |
0.329 |
|
1992 |
Ekpenuma SN, Myles CW. Structural stability of Zn-containing II—VI semiconductor alloys: Microhardness calculations Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 208-216. DOI: 10.1116/1.578138 |
0.784 |
|
1991 |
Li WG, Myles CW. Effects of lattice relaxation on deep levels in semiconductors. Physical Review. B, Condensed Matter. 43: 2192-2200. PMID 9997491 DOI: 10.1103/Physrevb.43.2192 |
0.771 |
|
1991 |
Li WG, Myles CW. Molecular-dynamics approach to lattice-relaxation effects on deep levels in semiconductors. Physical Review. B, Condensed Matter. 43: 9947-9950. PMID 9996701 DOI: 10.1103/Physrevb.43.9947 |
0.78 |
|
1990 |
Ekpenuma SN, Myles CW, Gregg JR. Alloy disorder effects on the electronic properties of III-V quaternary semiconductor alloys. Physical Review. B, Condensed Matter. 41: 3582-3591. PMID 9994156 DOI: 10.1103/Physrevb.41.3582 |
0.769 |
|
1990 |
Carlsson AE, Fedders PA, Myles CW. Generalized embedded-atom format for semiconductors. Physical Review. B, Condensed Matter. 41: 1247-1250. PMID 9993832 DOI: 10.1103/Physrevb.41.1247 |
0.54 |
|
1990 |
Hur JH, Myles CW, Gundersen MA. Avalanche breakdown in p-n AlGaAs/GaAs heterojunctions Journal of Applied Physics. 67: 6917-6923. DOI: 10.1063/1.345085 |
0.321 |
|
1990 |
Bylander EG, Myles CW, Shen YT. Defect identification in semiconductor alloys using deep level composition dependence. II. Application to GaAs1-xPx Journal of Applied Physics. 67: 7351-7358. DOI: 10.1063/1.344522 |
0.798 |
|
1990 |
Ekpenuma SN, Myles CW. Semi-empirical tightbinding bandstructures for II-VI zincblende compounds Journal of Physics and Chemistry of Solids. 51: 93-100. DOI: 10.1016/0022-3697(90)90078-T |
0.767 |
|
1989 |
Shen YT, Myles CW. Chemical trends for deep levels associated with vacancy-impurity complexes in semiconductors. Physical Review. B, Condensed Matter. 40: 6222-6235. PMID 9992691 DOI: 10.1103/Physrevb.40.6222 |
0.771 |
|
1989 |
Tang SA, Myles CW, Ford WC. Effect of alloy disorder on the deep levels produced by the anion vacancy in GaAs1-xPx. Physical Review. B, Condensed Matter. 40: 11947-11950. PMID 9991807 DOI: 10.1103/Physrevb.40.11947 |
0.774 |
|
1989 |
Li WG, Myles CW, Shen YT. Deep levels associated with triplet impurity complexes in GaP. Physical Review. B, Condensed Matter. 40: 10425-10429. PMID 9991589 DOI: 10.1103/Physrevb.40.10425 |
0.742 |
|
1989 |
Hjalmarson HP, Myles CW. Theory of time-resolved luminescence of bound excitons in semiconductor alloys. Physical Review. B, Condensed Matter. 39: 6216-6219. PMID 9949051 DOI: 10.1103/Physrevb.39.6216 |
0.349 |
|
1989 |
Ekpenuma SN, Myles CW. Electronic properties of Hg1−x−yCdxZnyTe Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 321-325. DOI: 10.1116/1.576096 |
0.79 |
|
1989 |
Shen YT, Myles CW. Deep levels produced by triplet vacancy-impurity complexes in GaP Journal of Applied Physics. 65: 4273-4278. DOI: 10.1063/1.343312 |
0.78 |
|
1988 |
Ford WC, Myles CW. Alloy broadening of the deep electronic levels associated with the As vacancy in AlxGa Physical Review. B, Condensed Matter. 38: 1210-1214. PMID 9946377 DOI: 10.1103/Physrevb.38.1210 |
0.757 |
|
1988 |
Ford WC, Myles CW, Lichti RL. Theory of alloy broadening of deep levels in semiconductor alloys: Effects of second-neighbor disorder. Physical Review. B, Condensed Matter. 38: 10533-10541. PMID 9945908 DOI: 10.1103/Physrevb.38.10533 |
0.756 |
|
1988 |
Dai H, Gundersen MA, Myles CW, Snyder PG. Phonon-assisted indirect recombination of bound excitons in N-doped GaP, including near-resonant processes. Physical Review. B, Condensed Matter. 37: 1205-1217. PMID 9944628 DOI: 10.1103/Physrevb.37.1205 |
0.757 |
|
1988 |
Myles CW. Charge state splittings of deep levels in Hg1_xCdxTe Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2675-2680. DOI: 10.1116/1.575529 |
0.303 |
|
1987 |
Gregg JR, Myles CW, Shen YT. Electronic properties of the quaternary semiconductor alloy GaSb1-x-yAsxPy: Coherent-potential approximation. Physical Review. B, Condensed Matter. 35: 2532-2535. PMID 9941721 DOI: 10.1103/Physrevb.35.2532 |
0.797 |
|
1987 |
Myles CW, Ren SF, Allen RE, Ren SY. Effects of alloy disorder on Schottky-barrier heights. Physical Review. B, Condensed Matter. 35: 9758-9765. PMID 9941402 DOI: 10.1103/Physrevb.35.9758 |
0.402 |
|
1987 |
Shen YT, Myles CW. Deep levels associated with vacancy-impurity complexes in GaAs Applied Physics Letters. 51: 2034-2036. DOI: 10.1063/1.98283 |
0.775 |
|
1987 |
Menon M, Myles CW. Substrate response to atomic scattering from solid surfaces Journal of Physics and Chemistry of Solids. 48: 621-627. DOI: 10.1016/0022-3697(87)90150-8 |
0.319 |
|
1987 |
Shen J, Myles CW, Gregg JR. Coherent potential approximation calculations for electronic spectra of one-dimensional quaternary alloys Journal of Physics and Chemistry of Solids. 48: 329-340. DOI: 10.1016/0022-3697(87)90091-6 |
0.716 |
|
1987 |
Shen YT, Myles CW. Electronic structure of ternary semiconductor alloys: CPA calculations using sp3s* bandstructures Journal of Physics and Chemistry of Solids. 48: 1173-1184. DOI: 10.1016/0022-3697(87)90003-5 |
0.785 |
|
1986 |
Ford WC, Myles CW. Theory of alloy broadening of deep levels in semiconductor alloys: Nitrogen in AlxGa1-xAs. Physical Review. B, Condensed Matter. 34: 927-931. PMID 9939705 DOI: 10.1103/Physrevb.34.927 |
0.776 |
|
1986 |
Dai HH, Gundersen MA, Myles CW. Semiempirical formalism for the calculation of deep-level wave functions in k space. Physical Review. B, Condensed Matter. 33: 8234-8237. PMID 9938216 DOI: 10.1103/Physrevb.33.8234 |
0.32 |
|
1986 |
Myles CW, Ford WC. Effect of alloy disorder on deep levels in Hg1-xCdxTe Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2195-2199. DOI: 10.1116/1.574055 |
0.756 |
|
1985 |
Ford WC, Myles CW, Shen YT. Alloy broadening of impurity electronic spectra: One-dimensional-model calculations for a ternary alloy. Physical Review. B, Condensed Matter. 32: 3416-3421. PMID 9937480 DOI: 10.1103/Physrevb.32.3416 |
0.783 |
|
1985 |
Snyder PG, Myles CW, Dai HH, Gundersen MA. Model for phonon-assisted indirect recombination at impurity sites in semiconductors: A test of impurity wave-function theories. Physical Review. B, Condensed Matter. 32: 2685-2688. PMID 9937363 DOI: 10.1103/Physrevb.32.2685 |
0.779 |
|
1985 |
Myles CW, Williams PF, Chapman RA, Bylander EG. Identification of defect centers in Hg1-xCdxTe using their energy level composition dependence Journal of Applied Physics. 57: 5279-5286. DOI: 10.1063/1.334842 |
0.353 |
|
1985 |
Gregg JR, Myles CW. Coherent potential approximation for quaternary alloys: Application to phonon spectra in one dimension Journal of Physics and Chemistry of Solids. 46: 1305-1319. DOI: 10.1016/0022-3697(85)90132-5 |
0.668 |
|
1984 |
Shen YT, Myles CW. Theory of alloys. III. Embedded-cluster calculations of electronic spectra for a one-dimensional ternary alloy Physical Review B. 30: 3283-3293. DOI: 10.1103/Physrevb.30.3283 |
0.389 |
|
1984 |
Hu WM, Dow JD, Myles CW. Effects of diagonal and off-diagonal disorder on the Anderson-model densities of states in two and three dimensions Physical Review B. 30: 1720-1723. DOI: 10.1103/Physrevb.30.1720 |
0.49 |
|
1984 |
Fedders PA, Myles CW. Tight-binding view of alloy scattering in III-V ternary semiconducting alloys Physical Review B. 29: 802-807. DOI: 10.1103/Physrevb.29.802 |
0.543 |
|
1984 |
Myles CW, Sankey OF. Deep levels associated with (vacancy, impurity) pairs in covalent semiconductors Physical Review B. 29: 6810-6823. DOI: 10.1103/Physrevb.29.6810 |
0.537 |
|
1984 |
Snyder P, Gundersen MA, Myles CW. Comparison of calculated and measured GaP:N luminescence spectra Journal of Luminescence. 31: 448-450. DOI: 10.1016/0022-2313(84)90323-5 |
0.302 |
|
1982 |
Myles CW, Dow JD. Alloy broadening of impurity electronic spectra: One-dimensional tight-binding theory for a binary alloy Physical Review B. 25: 3593-3607. DOI: 10.1103/Physrevb.25.3593 |
0.574 |
|
1981 |
Myles CW, Dow JD, Sankey OF. Theory of alloy broadening of impurity electronic spectra Physical Review B. 24: 1137-1139. DOI: 10.1103/Physrevb.24.1137 |
0.679 |
|
1981 |
O'Hara MJ, Myles CW, Dow JD, Painter RD. Vibrational spectra of one-dimensional mass-disordered quaternary alloys Journal of Physics and Chemistry of Solids. 42: 1043-1050. DOI: 10.1016/0022-3697(81)90128-1 |
0.345 |
|
1979 |
Myles CW, Dow JD. Spectra of ternary alloys Physical Review Letters. 42: 254-257. DOI: 10.1103/Physrevlett.42.254 |
0.331 |
|
1979 |
Fedders PA, Myles CW. Quadrupolar exchange effects on the dynamics of high-temperature paramagnets Physical Review B. 19: 1331-1344. DOI: 10.1103/Physrevb.19.1331 |
0.493 |
|
1976 |
Myles CW, Ebner C, Fedders PA. Dynamics of a system of randomly distributed spins with multipolar interactions: Application to dipolar systems Physical Review B. 14: 1-12. DOI: 10.1103/Physrevb.14.1 |
0.489 |
|
1974 |
Myles CW, Fedders PA. Dynamical two-point correlation functions in a high-temperature Heisenberg paramagnet Physical Review B. 9: 4872-4881. DOI: 10.1103/Physrevb.9.4872 |
0.505 |
|
1973 |
Myles CW, Fedders PA. Higher-order acoustic-paramagnetic-resonance transitions of magnetic impurities in dielectrics Physical Review B. 8: 2049-2059. DOI: 10.1103/Physrevb.8.2049 |
0.495 |
|
1972 |
Fedders PA, Myles CW. Theory of higher-order acoustic paramagnetic-resonance transitions of magnetic ions in dielectrics Physical Review Letters. 28: 1620-1622. DOI: 10.1103/Physrevlett.28.1620 |
0.498 |
|
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