Charles W. Myles, PhD - Publications

Affiliations: 
Physics Texas Tech University, Lubbock, TX 
Area:
Physics, Theoretical Condensed Matter Physics, Computational Materials Physics
Website:
http://www.phys.ttu.edu/~cmyles/

84 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Xue D, Myles CW. Electronic Property and Negative Thermal Expansion Behavior of SiGe ( = 8, 32, 40, 104) Clathrate Solid Solution from First Principles. Nanomaterials (Basel, Switzerland). 9. PMID 31163710 DOI: 10.3390/Nano9060851  0.575
2019 Xue D, Myles CW. First-Principles Analysis of Vibrational Properties of Type II SiGe Alloy Clathrates. Nanomaterials (Basel, Switzerland). 9. PMID 31083355 DOI: 10.3390/Nano9050723  0.6
2019 Xue D, Myles CW. First-Principles Study of the Electronic, Vibrational Properties and Anharmonic Effects of Some Si-Based Type-II Binary Clathrates. Materials (Basel, Switzerland). 12. PMID 30754639 DOI: 10.3390/Ma12030536  0.566
2019 Zahid H, Xue D, Myles C. First Principles Study of the Vibrational and Thermal Properties of Sn-Based Type II Clathrates, CsxSn136 (0 ≤ x ≤ 24) and Rb24Ga24Sn112 Inorganics. 7: 74. DOI: 10.3390/INORGANICS7060074  0.551
2019 Xue D, Myles CW. First-Principles Investigation on Type-II Aluminum-Substituted Ternary and Quaternary Clathrate Semiconductors R8Al8Si128 (R = Cs, Rb), Cs8Na16Al24Si112 Applied Sciences. 9: 125. DOI: 10.3390/App9010125  0.566
2017 Norouzzadeh P, Myles CW, Vashee D. Phonon Dynamics in Type VIII Silicon Clathrates: Beyond the Rattler Concept Physical Review B - Condensed Matter and Materials Physics.. 95: 1952061. DOI: 10.1103/Physrevb.95.195206  0.741
2016 Xue D, Myles CW, Higgins C. Effect of Guest Atom Composition on the Structural and Vibrational Properties of the Type II Clathrate-Based Materials AxSi136, AxGe136 and AxSn136 (A = Na, K, Rb, Cs; 0 ≤ x ≤ 24). Materials (Basel, Switzerland). 9. PMID 28773812 DOI: 10.3390/Ma9080691  0.75
2016 Norouzzadeh P, Myles CW. A first-principles lattice dynamical study of type-I, type-II, and type-VIII silicon clathrates Journal of Materials Science. 1-11. DOI: 10.1007/S10853-016-9766-1  0.719
2015 Norouzzadeh P, Krasinski JS, Myles CW, Vashaee D. Type VIII Si based clathrates: prospects for a giant thermoelectric power factor. Physical Chemistry Chemical Physics : Pccp. 17: 8850-9. PMID 25744661 DOI: 10.1039/C5Cp00729A  0.737
2014 Norouzzadeh P, Myles CW, Vashaee D. Prediction of giant thermoelectric power factor in type-VIII clathrate Si46. Scientific Reports. 4: 7028. PMID 25391971 DOI: 10.1038/Srep07028  0.716
2014 Norouzzadeh P, Myles CW, Vashaee D. Structural, electronic, phonon and thermodynamic properties of hypothetical type-VIII clathrates Ba8Si46 and Ba8Al 16Si30 investigated by first principles Journal of Alloys and Compounds. 587: 474-480. DOI: 10.1016/J.Jallcom.2013.10.190  0.761
2013 Norouzzadeh P, Myles CW, Vashaee D. Prediction of a large number of electron pockets near the band edges in type-VIII clathrate Si46 and its physical properties from first principles. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 475502. PMID 24172765 DOI: 10.1088/0953-8984/25/47/475502  0.744
2013 Norouzzadeh P, Myles CW, Vashaee D. Electronic, elastic, vibrational, and thermodynamic properties of type-VIII clathrates Ba8Ga16Sn30 and Ba 8Al16Sn30 by first principles Journal of Applied Physics. 114. DOI: 10.1063/1.4826213  0.742
2010 Beekman M, Nenghabi EN, Biswas K, Myles CW, Baitinger M, Grin Y, Nolas GS. Framework contraction in Na-stuffed Si(cF136). Inorganic Chemistry. 49: 5338-40. PMID 20503981 DOI: 10.1021/Ic1005049  0.782
2008 Nenghabi EN, Myles CW. First-principles calculations of the vibrational and thermal properties of the type-I clathrates Ba8 Ga16 Six Ge30-x and Sr8 Ga16 Six Ge30-x Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.195202  0.801
2008 Nenghabi EN, Myles CW. First principles calculations of the structural and electronic properties of the type-I semiconductor clathrate alloys Ba8 Ga16 Six Ge30-x and Sr8 Ga16 Six Ge30-x Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.205203  0.79
2008 Nenghabi EN, Myles CW. First principles calculations of the structural, electronic and vibrational properties of the clathrates Ba8Al16Ge30 and Ba8Al16Si30 Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/41/415214  0.801
2008 Biswas K, Myles CW, Sanati M, Nolas GS. Thermal properties of guest-free Si136 and Ge136 clathrates: A first-principles study Journal of Applied Physics. 104. DOI: 10.1063/1.2960580  0.653
2007 Biswas K, Myles CW. Electronic and vibrational properties of framework-substituted type-II silicon clathrates Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.245205  0.637
2007 Biswas K, Myles CW. Density-functional investigation of Na16A8Ge 136 (A = Rb,Cs) clathrates Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/46/466206  0.625
2007 Myles CW, Biswas K, Nenghabi E. Rattling "guest" impurities in Si and Ge clathrate semiconductors Physica B: Condensed Matter. 401: 695-698. DOI: 10.1016/J.Physb.2007.09.054  0.799
2006 Biswas K, Myles CW. Electronic structure of the Na16 Rb8 Si136 and K16 Rb8 Si136 clathrates Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.115113  0.664
2003 Myles CW, Dong J, Sankey OF. Rattling guest atoms in Si, Ge, and Sn-based type-II clathrate materials Physica Status Solidi (B) Basic Research. 239: 26-34. DOI: 10.1002/Pssb.200303236  0.586
2003 Kambour KE, Hjalmarson HP, Myles CW. Theory of optically-triggered electrical breakdown of semiconductors Conference On Electrical Insulation and Dielectric Phenomena (Ceidp), Annual Report. 345-348.  0.716
2002 Myles CW, Dong J, Sankey OF, Kendziora CA, Nolas GS. Vibrational properties of tin clathrate materials Physical Review B - Condensed Matter and Materials Physics. 65: 2352081-23520810. DOI: 10.1103/Physrevb.65.235208  0.556
2002 Nolas GS, Kendziora CA, Gryko J, Dong J, Myles CW, Poddar A, Sankey OF. Raman scattering study of stoichiometric Si and Ge type II clathrates Journal of Applied Physics. 92: 7225-7230. DOI: 10.1063/1.1523146  0.57
2002 Myles CW, Ha BC, Park YK. Large supercell molecular dynamics study of defect formation in hydrogenated amorphous silicon Journal of Physics and Chemistry of Solids. 63: 1691-1698. DOI: 10.1016/S0022-3697(01)00255-4  0.315
2001 Dong J, Sankey OF, Myles CW. Theoretical study of the lattice thermal conductivity in Ge framework semiconductors. Physical Review Letters. 86: 2361-4. PMID 11289929 DOI: 10.1103/Physrevlett.86.2361  0.564
2001 Myles CW, Dong J, Sankey OF. Structural and electronic properties of tin clathrate materials Physical Review B - Condensed Matter and Materials Physics. 64: 1652021-16520211. DOI: 10.1103/Physrevb.64.165202  0.585
2001 Dong J, Sankey OF, Myles CW, Ramachandran GK, McMillan PF, Gryko J. Theoretical evaluation of the thermal conductivity in framework (clathrate) semiconductors Proceedings - Ieee International Symposium On Circuits and Systems. 4: Z611-Z616.  0.44
2000 Kambour K, Kang S, Myles CW, Hjalmarson HP. Steady-state properties of lock-on current filaments in gaas Ieee Transactions On Plasma Science. 28: 1491-1496. DOI: 10.1109/27.901221  0.522
2000 Myles CW, Li WG. Deep levels including lattice relaxation: First- and second-neighbor effects Journal of Physics and Chemistry of Solids. 61: 1855-1864. DOI: 10.1016/S0022-3697(00)00068-8  0.801
2000 Kang S, Myles CW. Effect of deep level impact ionization on avalanche breakdown in semiconductor p-n junctions Physica Status Solidi (a) Applied Research. 181: 219-229. DOI: 10.1002/1521-396X(200009)181:1<219::Aid-Pssa219>3.0.Co;2-O  0.564
1995 Park YK, Estreicher SK, Myles CW, Fedders PA. Molecular-dynamics study of the vacancy and vacancy-hydrogen interactions in silicon. Physical Review. B, Condensed Matter. 52: 1718-1723. PMID 9981237 DOI: 10.1103/Physrevb.52.1718  0.645
1995 Park YK, Myles CW. Molecular-dynamics study of defect formation in a-Si:H. Physical Review. B, Condensed Matter. 51: 1671-1679. PMID 9978887 DOI: 10.1103/Physrevb.51.1671  0.538
1993 Park YK, Myles CW. Semiempirical total-energy functional for silicon-hydrogen interactions in solids. Physical Review. B, Condensed Matter. 48: 17086-17091. PMID 10008312 DOI: 10.1103/Physrevb.48.17086  0.557
1993 Li WG, Myles CW. Deep-level wave functions including lattice-relaxation effects. Physical Review. B, Condensed Matter. 47: 4281-4288. PMID 10006573 DOI: 10.1103/Physrevb.47.4281  0.79
1992 Myles CW, Li WG. Lattice Relaxation Effects on Deep Levels: Molecular Dynamics Calculations Materials Science Forum. 505-510. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.505  0.324
1992 Myles CW. Microhardness of Hg-containing II–VI alloys Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10: 1454. DOI: 10.1116/1.586271  0.329
1992 Ekpenuma SN, Myles CW. Structural stability of Zn-containing II—VI semiconductor alloys: Microhardness calculations Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 208-216. DOI: 10.1116/1.578138  0.784
1991 Li WG, Myles CW. Effects of lattice relaxation on deep levels in semiconductors. Physical Review. B, Condensed Matter. 43: 2192-2200. PMID 9997491 DOI: 10.1103/Physrevb.43.2192  0.771
1991 Li WG, Myles CW. Molecular-dynamics approach to lattice-relaxation effects on deep levels in semiconductors. Physical Review. B, Condensed Matter. 43: 9947-9950. PMID 9996701 DOI: 10.1103/Physrevb.43.9947  0.78
1990 Ekpenuma SN, Myles CW, Gregg JR. Alloy disorder effects on the electronic properties of III-V quaternary semiconductor alloys. Physical Review. B, Condensed Matter. 41: 3582-3591. PMID 9994156 DOI: 10.1103/Physrevb.41.3582  0.769
1990 Carlsson AE, Fedders PA, Myles CW. Generalized embedded-atom format for semiconductors. Physical Review. B, Condensed Matter. 41: 1247-1250. PMID 9993832 DOI: 10.1103/Physrevb.41.1247  0.54
1990 Hur JH, Myles CW, Gundersen MA. Avalanche breakdown in p-n AlGaAs/GaAs heterojunctions Journal of Applied Physics. 67: 6917-6923. DOI: 10.1063/1.345085  0.321
1990 Bylander EG, Myles CW, Shen YT. Defect identification in semiconductor alloys using deep level composition dependence. II. Application to GaAs1-xPx Journal of Applied Physics. 67: 7351-7358. DOI: 10.1063/1.344522  0.798
1990 Ekpenuma SN, Myles CW. Semi-empirical tightbinding bandstructures for II-VI zincblende compounds Journal of Physics and Chemistry of Solids. 51: 93-100. DOI: 10.1016/0022-3697(90)90078-T  0.767
1989 Shen YT, Myles CW. Chemical trends for deep levels associated with vacancy-impurity complexes in semiconductors. Physical Review. B, Condensed Matter. 40: 6222-6235. PMID 9992691 DOI: 10.1103/Physrevb.40.6222  0.771
1989 Tang SA, Myles CW, Ford WC. Effect of alloy disorder on the deep levels produced by the anion vacancy in GaAs1-xPx. Physical Review. B, Condensed Matter. 40: 11947-11950. PMID 9991807 DOI: 10.1103/Physrevb.40.11947  0.774
1989 Li WG, Myles CW, Shen YT. Deep levels associated with triplet impurity complexes in GaP. Physical Review. B, Condensed Matter. 40: 10425-10429. PMID 9991589 DOI: 10.1103/Physrevb.40.10425  0.742
1989 Hjalmarson HP, Myles CW. Theory of time-resolved luminescence of bound excitons in semiconductor alloys. Physical Review. B, Condensed Matter. 39: 6216-6219. PMID 9949051 DOI: 10.1103/Physrevb.39.6216  0.349
1989 Ekpenuma SN, Myles CW. Electronic properties of Hg1−x−yCdxZnyTe Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 321-325. DOI: 10.1116/1.576096  0.79
1989 Shen YT, Myles CW. Deep levels produced by triplet vacancy-impurity complexes in GaP Journal of Applied Physics. 65: 4273-4278. DOI: 10.1063/1.343312  0.78
1988 Ford WC, Myles CW. Alloy broadening of the deep electronic levels associated with the As vacancy in AlxGa Physical Review. B, Condensed Matter. 38: 1210-1214. PMID 9946377 DOI: 10.1103/Physrevb.38.1210  0.757
1988 Ford WC, Myles CW, Lichti RL. Theory of alloy broadening of deep levels in semiconductor alloys: Effects of second-neighbor disorder. Physical Review. B, Condensed Matter. 38: 10533-10541. PMID 9945908 DOI: 10.1103/Physrevb.38.10533  0.756
1988 Dai H, Gundersen MA, Myles CW, Snyder PG. Phonon-assisted indirect recombination of bound excitons in N-doped GaP, including near-resonant processes. Physical Review. B, Condensed Matter. 37: 1205-1217. PMID 9944628 DOI: 10.1103/Physrevb.37.1205  0.757
1988 Myles CW. Charge state splittings of deep levels in Hg1_xCdxTe Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2675-2680. DOI: 10.1116/1.575529  0.303
1987 Gregg JR, Myles CW, Shen YT. Electronic properties of the quaternary semiconductor alloy GaSb1-x-yAsxPy: Coherent-potential approximation. Physical Review. B, Condensed Matter. 35: 2532-2535. PMID 9941721 DOI: 10.1103/Physrevb.35.2532  0.797
1987 Myles CW, Ren SF, Allen RE, Ren SY. Effects of alloy disorder on Schottky-barrier heights. Physical Review. B, Condensed Matter. 35: 9758-9765. PMID 9941402 DOI: 10.1103/Physrevb.35.9758  0.402
1987 Shen YT, Myles CW. Deep levels associated with vacancy-impurity complexes in GaAs Applied Physics Letters. 51: 2034-2036. DOI: 10.1063/1.98283  0.775
1987 Menon M, Myles CW. Substrate response to atomic scattering from solid surfaces Journal of Physics and Chemistry of Solids. 48: 621-627. DOI: 10.1016/0022-3697(87)90150-8  0.319
1987 Shen J, Myles CW, Gregg JR. Coherent potential approximation calculations for electronic spectra of one-dimensional quaternary alloys Journal of Physics and Chemistry of Solids. 48: 329-340. DOI: 10.1016/0022-3697(87)90091-6  0.716
1987 Shen YT, Myles CW. Electronic structure of ternary semiconductor alloys: CPA calculations using sp3s* bandstructures Journal of Physics and Chemistry of Solids. 48: 1173-1184. DOI: 10.1016/0022-3697(87)90003-5  0.785
1986 Ford WC, Myles CW. Theory of alloy broadening of deep levels in semiconductor alloys: Nitrogen in AlxGa1-xAs. Physical Review. B, Condensed Matter. 34: 927-931. PMID 9939705 DOI: 10.1103/Physrevb.34.927  0.776
1986 Dai HH, Gundersen MA, Myles CW. Semiempirical formalism for the calculation of deep-level wave functions in k space. Physical Review. B, Condensed Matter. 33: 8234-8237. PMID 9938216 DOI: 10.1103/Physrevb.33.8234  0.32
1986 Myles CW, Ford WC. Effect of alloy disorder on deep levels in Hg1-xCdxTe Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2195-2199. DOI: 10.1116/1.574055  0.756
1985 Ford WC, Myles CW, Shen YT. Alloy broadening of impurity electronic spectra: One-dimensional-model calculations for a ternary alloy. Physical Review. B, Condensed Matter. 32: 3416-3421. PMID 9937480 DOI: 10.1103/Physrevb.32.3416  0.783
1985 Snyder PG, Myles CW, Dai HH, Gundersen MA. Model for phonon-assisted indirect recombination at impurity sites in semiconductors: A test of impurity wave-function theories. Physical Review. B, Condensed Matter. 32: 2685-2688. PMID 9937363 DOI: 10.1103/Physrevb.32.2685  0.779
1985 Myles CW, Williams PF, Chapman RA, Bylander EG. Identification of defect centers in Hg1-xCdxTe using their energy level composition dependence Journal of Applied Physics. 57: 5279-5286. DOI: 10.1063/1.334842  0.353
1985 Gregg JR, Myles CW. Coherent potential approximation for quaternary alloys: Application to phonon spectra in one dimension Journal of Physics and Chemistry of Solids. 46: 1305-1319. DOI: 10.1016/0022-3697(85)90132-5  0.668
1984 Shen YT, Myles CW. Theory of alloys. III. Embedded-cluster calculations of electronic spectra for a one-dimensional ternary alloy Physical Review B. 30: 3283-3293. DOI: 10.1103/Physrevb.30.3283  0.389
1984 Hu WM, Dow JD, Myles CW. Effects of diagonal and off-diagonal disorder on the Anderson-model densities of states in two and three dimensions Physical Review B. 30: 1720-1723. DOI: 10.1103/Physrevb.30.1720  0.49
1984 Fedders PA, Myles CW. Tight-binding view of alloy scattering in III-V ternary semiconducting alloys Physical Review B. 29: 802-807. DOI: 10.1103/Physrevb.29.802  0.543
1984 Myles CW, Sankey OF. Deep levels associated with (vacancy, impurity) pairs in covalent semiconductors Physical Review B. 29: 6810-6823. DOI: 10.1103/Physrevb.29.6810  0.537
1984 Snyder P, Gundersen MA, Myles CW. Comparison of calculated and measured GaP:N luminescence spectra Journal of Luminescence. 31: 448-450. DOI: 10.1016/0022-2313(84)90323-5  0.302
1982 Myles CW, Dow JD. Alloy broadening of impurity electronic spectra: One-dimensional tight-binding theory for a binary alloy Physical Review B. 25: 3593-3607. DOI: 10.1103/Physrevb.25.3593  0.574
1981 Myles CW, Dow JD, Sankey OF. Theory of alloy broadening of impurity electronic spectra Physical Review B. 24: 1137-1139. DOI: 10.1103/Physrevb.24.1137  0.679
1981 O'Hara MJ, Myles CW, Dow JD, Painter RD. Vibrational spectra of one-dimensional mass-disordered quaternary alloys Journal of Physics and Chemistry of Solids. 42: 1043-1050. DOI: 10.1016/0022-3697(81)90128-1  0.345
1979 Myles CW, Dow JD. Spectra of ternary alloys Physical Review Letters. 42: 254-257. DOI: 10.1103/Physrevlett.42.254  0.331
1979 Fedders PA, Myles CW. Quadrupolar exchange effects on the dynamics of high-temperature paramagnets Physical Review B. 19: 1331-1344. DOI: 10.1103/Physrevb.19.1331  0.493
1976 Myles CW, Ebner C, Fedders PA. Dynamics of a system of randomly distributed spins with multipolar interactions: Application to dipolar systems Physical Review B. 14: 1-12. DOI: 10.1103/Physrevb.14.1  0.489
1974 Myles CW, Fedders PA. Dynamical two-point correlation functions in a high-temperature Heisenberg paramagnet Physical Review B. 9: 4872-4881. DOI: 10.1103/Physrevb.9.4872  0.505
1973 Myles CW, Fedders PA. Higher-order acoustic-paramagnetic-resonance transitions of magnetic impurities in dielectrics Physical Review B. 8: 2049-2059. DOI: 10.1103/Physrevb.8.2049  0.495
1972 Fedders PA, Myles CW. Theory of higher-order acoustic paramagnetic-resonance transitions of magnetic ions in dielectrics Physical Review Letters. 28: 1620-1622. DOI: 10.1103/Physrevlett.28.1620  0.498
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