| Year |
Citation |
Score |
| 2023 |
Liu Z, Nong M, Lu Y, Cao H, Yuvaraja S, Xiao N, Alnakhli Z, Aguileta Vázquez RR, Li X. Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy. Optics Letters. 47: 6229-6232. PMID 37219213 DOI: 10.1364/OL.476727 |
0.379 |
|
| 2020 |
Guo W, Chen L, Xu H, Qian Y, Sheikhi M, Hoo J, Guo S, Xu L, Liu J, Alqatari F, Li X, He K, Feng ZC, Ye J. Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains Photonics Research. 8: 812-818. DOI: 10.1364/Prj.387700 |
0.39 |
|
| 2020 |
Hou J, Yang B, Li X, Ma C, Wang B, Long H, Yang C, Chen S. Efficient and stable thin-film crystalline silicon solar cell by introducing rotation factor in surface square pillar array grating Journal of Nanophotonics. 14: 16008. DOI: 10.1117/1.Jnp.14.016008 |
0.362 |
|
| 2020 |
Tran TB, Liao C, AlQatari FS, Li X. Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition Applied Physics Letters. 117: 82102. DOI: 10.1063/5.0019881 |
0.372 |
|
| 2020 |
Wang W, Chen J, Lundh JS, Shervin S, Oh SK, Pouladi S, Rao Z, Kim JY, Kwon M, Li X, Choi S, Ryou J. Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending Applied Physics Letters. 116: 123501. DOI: 10.1063/1.5142546 |
0.341 |
|
| 2020 |
Ajia IA, Almalawi D, Lu Y, Lopatin S, Li X, Liu Z, Roqan IS. Subquantum-Well Influence on Carrier Dynamics in High Efficiency DUV Dislocation-Free AlGaN/AlGaN-Based Multiple Quantum Wells Acs Photonics. 7: 1667-1675. DOI: 10.1021/Acsphotonics.9B01814 |
0.375 |
|
| 2020 |
Zhang Y, Deng G, Yu Y, Wang Y, Zhao D, Shi Z, Zhang B, Li X. Demonstration of N-Polar III-Nitride Tunnel Junction LED Acs Photonics. 7: 1723-1728. DOI: 10.1021/Acsphotonics.0C00269 |
0.39 |
|
| 2019 |
Dai J, Chen J, Li X, Zhang J, Long H, Kuo H, He Y, Chen C. Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction. Optics Letters. 44: 1944-1947. PMID 30985781 DOI: 10.1364/Ol.44.001944 |
0.423 |
|
| 2019 |
Li X, Dupuis RD, Wernicke T. Semiconductor UV photonics: feature introduction Photonics Research. 7. DOI: 10.1364/Prj.7.0Suvp1 |
0.404 |
|
| 2019 |
Priante D, Tangi M, Min J, Alfaraj N, Liang JW, Sun H, Alhashim HH, Li X, Albadri AM, Alyamani AY, Ng TK, Ooi BS. Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes Optical Materials Express. 9: 203-215. DOI: 10.1364/Ome.9.000203 |
0.393 |
|
| 2019 |
Chen Q, Dai J, Li X, Gao Y, Long H, Zhang Z, Chen C, Kuo H. Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design Ieee Electron Device Letters. 40: 1925-1928. DOI: 10.1109/Led.2019.2948952 |
0.395 |
|
| 2019 |
Ren Z, Lu Y, Yao H, Sun H, Liao C, Dai J, Chen C, Ryou J, Yan J, Wang J, Li J, Li X. III-Nitride Deep UV LED Without Electron Blocking Layer Ieee Photonics Journal. 11: 1-11. DOI: 10.1109/Jphot.2019.2902125 |
0.399 |
|
| 2019 |
Tak BR, Garg M, Dewan S, Torres-Castanedo CG, Li K, Gupta V, Li X, Singh R. High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors Journal of Applied Physics. 125: 144501. DOI: 10.1063/1.5088532 |
0.301 |
|
| 2019 |
Shan M, Zhang Y, Tran TB, Jiang J, Long H, Zheng Z, Wang A, Guo W, Ye J, Chen C, Dai J, Li X. Deep UV Laser at 249 nm Based on GaN Quantum Wells Acs Photonics. 6: 2387-2391. DOI: 10.1021/Acsphotonics.9B00882 |
0.429 |
|
| 2019 |
Garg M, Kumar A, Sun H, Liao C, Li X, Singh R. Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization Journal of Alloys and Compounds. 806: 852-857. DOI: 10.1016/J.Jallcom.2019.07.234 |
0.346 |
|
| 2018 |
Lin R, Galan SV, Sun H, Hu Y, Alias MS, Janjua B, Ng TK, Ooi BS, Li X. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations Photonics Research. 6: 457-462. DOI: 10.1364/Prj.6.000457 |
0.478 |
|
| 2018 |
Hou J, Yang C, Li X, Cao Z, Chen S. Enhanced complete photonic bandgap in a moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals Photonics Research. 6: 282-289. DOI: 10.1364/Prj.6.000282 |
0.337 |
|
| 2018 |
Garg M, Naik TR, Pathak R, Rao VR, Liao C, Li K, Sun H, Li X, Singh R. Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules Journal of Applied Physics. 124: 195702. DOI: 10.1063/1.5049873 |
0.343 |
|
| 2018 |
Yan L, Zhang Y, Han X, Deng G, Li P, Yu Y, Chen L, Li X, Song J. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition Applied Physics Letters. 112: 182104. DOI: 10.1063/1.5023521 |
0.41 |
|
| 2018 |
Sun H, Priante D, Min J, Subedi RC, Shakfa MK, Ren Z, Li K, Lin R, Zhao C, Ng TK, Ryou J, Zhang X, Ooi BS, Li X. Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation Acs Photonics. 5: 3305-3314. DOI: 10.1021/Acsphotonics.8B00538 |
0.428 |
|
| 2018 |
Sun H, Li X. Recent Advances on III-Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics Physica Status Solidi (a). 216: 1800420. DOI: 10.1002/Pssa.201800420 |
0.348 |
|
| 2018 |
Guo W, Sun H, Torre B, Li J, Sheikhi M, Jiang J, Li H, Guo S, Li K, Lin R, Giugni A, Fabrizio EMD, Li X, Ye J. Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence Advanced Functional Materials. 28: 1802395. DOI: 10.1002/Adfm.201802395 |
0.324 |
|
| 2017 |
Hou J, Hong W, Li X, Yang C, Chen S. Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells: erratum. Optics Express. 25: A1053-A1056. PMID 29220983 DOI: 10.1364/Oe.25.0A1053 |
0.313 |
|
| 2017 |
Sun X, Zhang Z, Chaaban A, Ng TK, Shen C, Chen R, Yan J, Sun H, Li X, Wang J, Li J, Alouini MS, Ooi BS. 71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation. Optics Express. 25: 23267-23274. PMID 29041627 DOI: 10.1364/Oe.25.023267 |
0.32 |
|
| 2017 |
Janjua B, Sun H, Zhao C, Anjum DH, Wu F, Alhamoud AA, Li X, Albadri AM, Alyamani AY, El-Desouki MM, Ng TK, Ooi BS. Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy. Nanoscale. PMID 28290591 DOI: 10.1039/C7Nr00006E |
0.497 |
|
| 2017 |
Janjua B, Sun H, Zhao C, Anjum DH, Priante D, Alhamoud AA, Wu F, Li X, Albadri AM, Alyamani AY, El-Desouki MM, Ng TK, Ooi BS. Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates. Optics Express. 25: 1381-1390. PMID 28158020 DOI: 10.1364/Oe.25.001381 |
0.515 |
|
| 2017 |
Prabaswara A, Stowe DJ, Janjua B, Ng TK, Anjum DH, Longo P, Zhao C, Elafandy RT, Li X, Alyamani AY, El-Desouki MM, Ooi BS. Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence Journal of Nanophotonics. 11: 26015-26015. DOI: 10.1117/1.Jnp.11.026015 |
0.388 |
|
| 2017 |
Sun H, Wu F, Al tahtamouni TM, Alfaraj N, Li K, Detchprohm T, Dupuis RD, Li X. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate Journal of Physics D: Applied Physics. 50: 395101. DOI: 10.1088/1361-6463/Aa8503 |
0.319 |
|
| 2017 |
Wu F, Sun H, AJia IA, Roqan IS, Zhang D, Dai J, Chen C, Feng ZC, Li X. Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design Journal of Physics D. 50: 245101. DOI: 10.1088/1361-6463/Aa70Dd |
0.435 |
|
| 2017 |
Liu K, Sun H, AlQatari F, Guo W, Liu X, Li J, Castanedo CGT, Li X. Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering Applied Physics Letters. 111: 222106. DOI: 10.1063/1.5008451 |
0.361 |
|
| 2017 |
Sun H, Park YJ, Li K, Torres Castanedo CG, Alowayed A, Detchprohm T, Dupuis RD, Li X. Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction Applied Physics Letters. 111: 122106. DOI: 10.1063/1.4999249 |
0.305 |
|
| 2017 |
Sun H, Shakfa MK, Muhammed MM, Janjua B, Li K, Lin R, Ng TK, Roqan IS, Ooi BS, Li X. Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes Acs Photonics. DOI: 10.1021/Acsphotonics.7B01235 |
0.389 |
|
| 2017 |
Detchprohm T, Li X, Shen S-, Yoder PD, Dupuis RD. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors Semiconductors and Semimetals. 96: 121-166. DOI: 10.1016/Bs.Semsem.2016.09.001 |
0.32 |
|
| 2016 |
Sundaram S, Li X, El Gmili Y, Bonanno PL, Puybaret R, Pradalier C, Pantzas K, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates. Nanotechnology. 27: 115602. PMID 26878255 DOI: 10.1088/0957-4484/27/11/115602 |
0.348 |
|
| 2015 |
Li X, Xie H, Ponce FA, Ryou JH, Detchprohm T, Dupuis RD. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4938136 |
0.404 |
|
| 2015 |
Sundaram S, El Gmili Y, Puybaret R, Li X, Bonanno PL, Pantzas K, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates Applied Physics Letters. 107. DOI: 10.1063/1.4931132 |
0.393 |
|
| 2015 |
Li XH, Kao TT, Satter MM, Wei YO, Wang S, Xie H, Shen SC, Yoder PD, Fischer AM, Ponce FA, Detchprohm T, Dupuis RD. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate Applied Physics Letters. 106. DOI: 10.1063/1.4906590 |
0.378 |
|
| 2015 |
Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Réveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, et al. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Journal of Crystal Growth. 432: 37-44. DOI: 10.1016/J.Jcrysgro.2015.09.013 |
0.379 |
|
| 2015 |
Li X, Sundaram S, El Gmili Y, Genty F, Bouchoule S, Patriache G, Disseix P, Réveret F, Leymarie J, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A. MOVPE grown periodic AlN/BAlN heterostructure with high boron content Journal of Crystal Growth. 414: 119-122. DOI: 10.1016/J.Jcrysgro.2014.09.030 |
0.334 |
|
| 2015 |
Li XH, Wang S, Xie H, Wei YO, Kao TT, Satter MM, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA. Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition Physica Status Solidi (B) Basic Research. 252: 1089-1095. DOI: 10.1002/Pssb.201451571 |
0.344 |
|
| 2014 |
Liu YS, Kao TT, Satter MM, Lochner Z, Li XH, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 9002. DOI: 10.1117/12.2036835 |
0.39 |
|
| 2014 |
Satter MM, Lochner Z, Kao TT, Liu YS, Li XH, Shen SC, Dupuis RD, Yoder PD. AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport Ieee Journal of Quantum Electronics. 50: 166-173. DOI: 10.1109/Jqe.2014.2300757 |
0.404 |
|
| 2014 |
Sundaram S, Puybaret R, Gmili YE, Li X, Bonanno PL, Pantzas K, Orsal G, Troadec D, Cai Z-, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Journal of Applied Physics. 116: 163105. DOI: 10.1063/1.4900531 |
0.436 |
|
| 2014 |
Li XH, Detchprohm T, Kao TT, Satter MM, Shen SC, Douglas Yoder P, Dupuis RD, Wang S, Wei YO, Xie H, Fischer AM, Ponce FA, Wernicke T, Reich C, Martens M, et al. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates Applied Physics Letters. 105. DOI: 10.1063/1.4897527 |
0.411 |
|
| 2014 |
Monemar B, Paskov PP, Pozina G, Hemmingsson C, Bergman JP, Khromov S, Izyumskaya VN, Avrutin V, Li X, Morkoç H, Amano H, Iwaya M, Akasaki I. Properties of the main Mg-related acceptors in GaN from optical and structural studies Journal of Applied Physics. 115: 053507. DOI: 10.1063/1.4862928 |
0.318 |
|
| 2014 |
Satter MM, Liu YS, Kao TT, Lochner Z, Li X, Ryou JH, Shen SC, Detchprohm T, Dupuis RD, Yoder PD. Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 828-831. DOI: 10.1002/Pssc.201300679 |
0.399 |
|
| 2013 |
Lochner Z, Kao TT, Liu YS, Li XH, Satter MM, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2008830 |
0.384 |
|
| 2013 |
Tan CK, Zhang J, Li XH, Liu G, Tayo BO, Tansu N. First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters Ieee/Osa Journal of Display Technology. 9: 272-279. DOI: 10.1109/Jdt.2013.2248342 |
0.738 |
|
| 2013 |
Li XH, Zhu P, Liu G, Zhang J, Song R, Ee YK, Kumnorkaew P, Gilchrist JF, Tansu N. Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays Ieee/Osa Journal of Display Technology. 9: 324-332. DOI: 10.1109/Jdt.2013.2246541 |
0.762 |
|
| 2013 |
Kao TT, Liu YS, Mahbub Satter M, Li XH, Lochner Z, Douglas Yoder P, Detchprohm T, Dupuis RD, Shen SC, Ryou JH, Fischer AM, Wei Y, Xie H, Ponce FA. Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors Applied Physics Letters. 103. DOI: 10.1063/1.4829477 |
0.388 |
|
| 2013 |
Zhang F, Li X, Hafiz S, Okur S, Avrutin V, Özgür Ü, Morkoç H, Matulionis A. The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes Applied Physics Letters. 103: 051122. DOI: 10.1063/1.4817387 |
0.44 |
|
| 2013 |
Lochner Z, Kao TT, Liu YS, Li XH, Mahbub Satter M, Shen SC, Douglas Yoder P, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Applied Physics Letters. 102. DOI: 10.1063/1.4795719 |
0.426 |
|
| 2013 |
Lochner Z, Li XH, Kao TT, Satter MM, Kim HJ, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Sun K, Wei Y, Li T, Fischer A, Ponce FA. Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate Physica Status Solidi (a) Applications and Materials Science. 210: 1768-1770. DOI: 10.1002/Pssa.201329013 |
0.378 |
|
| 2012 |
Li X, Okur S, Zhang F, Hafiz SA, Avrutin V, Özgür Ü, Morkoç H, Jarašiūnas K. Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions Applied Physics Letters. 101: 041115. DOI: 10.1063/1.4739419 |
0.465 |
|
| 2012 |
Yankovich AB, Kvit AV, Li X, Zhang F, Avrutin V, Liu HY, Izyumskaya N, Özgür Ü, Morkoç H, Voyles PM. Hexagonal-based pyramid void defects in GaN and InGaN Journal of Applied Physics. 111: 023517. DOI: 10.1063/1.3679540 |
0.356 |
|
| 2012 |
Koo WH, Youn W, Zhu P, Li X, Tansu N, So F. Light Extraction: Light Extraction of Organic Light Emitting Diodes by Defective Hexagonal-Close-Packed Array (Adv. Funct. Mater. 16/2012) Advanced Functional Materials. 22: 3453-3453. DOI: 10.1002/Adfm.201290095 |
0.742 |
|
| 2012 |
Koo WH, Youn W, Zhu P, Li XH, Tansu N, So F. Light extraction of organic light emitting diodes by defective hexagonal-close-packed array Advanced Functional Materials. 22: 3454-3459. DOI: 10.1002/Adfm.201200876 |
0.758 |
|
| 2011 |
Li XH, Ee YK, Song R, Tansu N. Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO 2 microsphere arrays Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875980 |
0.8 |
|
| 2011 |
Tansu N, Zhao H, Zhang J, Liu G, Li XH, Ee YK, Song R, Toma T, Zhao L, Huang GS. Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering Proceedings of Spie - the International Society For Optical Engineering. 7954. DOI: 10.1117/12.875901 |
0.774 |
|
| 2011 |
Li XH, Song R, Ee YK, Kumnorkaew P, Gilchrist JF, Tansu N. Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios Ieee Photonics Journal. 3: 489-499. DOI: 10.1109/Jphot.2011.2150745 |
0.798 |
|
| 2011 |
Cao W, Biser JM, Ee YK, Li XH, Tansu N, Chan HM, Vinci RP. Dislocation structure of GaN films grown on planar and nano-patterned sapphire Journal of Applied Physics. 110. DOI: 10.1063/1.3631823 |
0.728 |
|
| 2010 |
Wu M, Leach JH, Ni X, Li X, Xie J, Doǧan S, Özgür U, Morkoç H, Paskova T, Preble E, Evans KR, Lu CZ. InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 908-911. DOI: 10.1116/1.3481138 |
0.34 |
|
| 2010 |
Tansu N, Zhao H, Liu G, Li XH, Zhang J, Tong H, Ee YK. III-nitride photonics Ieee Photonics Journal. 2: 236-243. DOI: 10.1109/Jphot.2010.2045887 |
0.748 |
|
| 2010 |
Leach JH, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Paskova T, Preble E, Evans KR, Lu CZ. Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3358192 |
0.36 |
|
| 2010 |
Ee YK, Li XH, Biser J, Cao W, Chan HM, Vinci RP, Tansu N. Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire Journal of Crystal Growth. 312: 1311-1315. DOI: 10.1016/J.Jcrysgro.2009.10.029 |
0.751 |
|
| 2009 |
Zhao H, Liu G, Li XH, Huang GS, Poplawsky JD, Penn ST, Dierolf V, Tansu N. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile Applied Physics Letters. 95. DOI: 10.1063/1.3204446 |
0.753 |
|
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