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Melvin B. McLaurin, Ph.D. - Publications

Affiliations: 
2007 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Ehrentraut D, Pakalapati RT, Kamber DS, Jiang W, Pocius DW, Downey BC, McLaurin M, D'Evelyn MP. High quality, low cost ammonothermal bulk GaN substrates Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Ja01  0.428
2008 McLaurin MB, Hirai A, Young E, Wu F, Speck JS. Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN Japanese Journal of Applied Physics. 47: 5429-5431. DOI: 10.1143/Jjap.47.5429  0.678
2008 Kim KC, Schmidt MC, Wu F, McLaurin MB, Hirai A, Nakamura S, Denbaars SP, Speck JS. Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth Applied Physics Letters. 93. DOI: 10.1063/1.2908978  0.692
2007 Onuma T, Koyama T, Chakraborty A, McLaurin M, Haskell BA, Fini PT, Keller S, Denbaars SP, Speck JS, Nakamura S, Mishra UK, Sota T, Chichibu SF. Radiative and nonradiative lifetimes in nonpolar m -plane Inx Ga1-x NGaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1524-1528. DOI: 10.1116/1.2746354  0.474
2007 Hirai A, Haskell BA, McLaurin MB, Wu F, Schmidt MC, Kim KC, Baker TJ, Denbaars SP, Nakamura S, Speck JS. Defect-mediated surface morphology of nonpolar m -plane GaN Applied Physics Letters. 90. DOI: 10.1063/1.2715126  0.691
2007 McLaurin M, Speck JS. p‐type conduction in stacking‐fault‐free m ‐plane GaN Physica Status Solidi-Rapid Research Letters. 1: 110-112. DOI: 10.1002/Pssr.200701041  0.707
2006 McLaurin M, Mates TE, Wu F, Speck JS. Growth of p-type and n-type m-plane GaN by molecular beam epitaxy Journal of Applied Physics. 100: 63707. DOI: 10.1063/1.2338602  0.655
2005 McLaurin M, Mates TE, Speck JS. Molecular-beam epitaxy of p-type m-plane GaN Applied Physics Letters. 86: 262104. DOI: 10.1063/1.1977204  0.533
2004 McLaurin M, Haskell B, Nakamura S, Speck JS. Gallium adsorption onto (112̄0) gallium nitride surfaces Journal of Applied Physics. 96: 327-334. DOI: 10.1063/1.1759086  0.463
2004 Waltereit P, Sato H, Poblenz C, Green DS, Brown JS, McLaurin M, Katona T, DenBaars SP, Speck JS, Liang JH, Kato M, Tamura H, Omori S, Funaoka C. Blue gan-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5% Applied Physics Letters. 84: 2748-2750. DOI: 10.1063/1.1705721  0.609
2002 Waltereit P, Lim S-, McLaurin M, Speck JS. Heteroepitaxial Growth of GaN on 6H‐SiC(0001) by Plasma‐Assisted Molecular Beam Epitaxy Physica Status Solidi (a). 194: 524-527. DOI: 10.1002/1521-396X(200212)194:2<524::Aid-Pssa524>3.0.Co;2-N  0.517
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