Year |
Citation |
Score |
2013 |
Bryant BN, Hirai A, Young EC, Nakamura S, Speck JS. Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy Journal of Crystal Growth. 369: 14-20. DOI: 10.1016/J.Jcrysgro.2013.01.031 |
0.652 |
|
2013 |
Metcalfe GD, Hirai A, Young EC, Speck JS, Shen H, Wraback M. Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures Physica Status Solidi - Rapid Research Letters. 7: 993-996. DOI: 10.1002/Pssr.201308099 |
0.563 |
|
2010 |
Young EC, Romanov AE, Gallinat CS, Hirai A, Beltz GE, Speck JS. Anisotropy of tensile stresses and cracking in nonbasal plane Al xGa1-xN/GaN heterostructures Applied Physics Letters. 96. DOI: 10.1063/1.3276561 |
0.509 |
|
2010 |
Farrell RM, Haeger DA, Chen X, Iza M, Hirai A, Kelchner KM, Fujito K, Chakraborty A, Keller S, Denbaars SP, Speck JS, Nakamura S. Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes Journal of Crystal Growth. 313: 1-7. DOI: 10.1016/J.Jcrysgro.2010.08.060 |
0.614 |
|
2009 |
Tamboli AC, Schmidt MC, Hirai A, Denbaars SP, Hu EL. Photoelectrochemical undercut etching of m-Plane GaN for microdisk applications Journal of the Electrochemical Society. 156: H767-H771. DOI: 10.1149/1.3184156 |
0.473 |
|
2009 |
Tamboli AC, Schmidt MC, Hirai A, Denbaars SP, Hu EL. Observation of whispering gallery modes in nonpolar m -plane GaN microdisks Applied Physics Letters. 94. DOI: 10.1063/1.3160550 |
0.369 |
|
2009 |
Tamboli AC, Hirai A, Nakamura S, Denbaars SP, Hu EL. Photoelectrochemical etching of p -type GaN heterostructures Applied Physics Letters. 94. DOI: 10.1063/1.3120545 |
0.31 |
|
2008 |
McLaurin MB, Hirai A, Young E, Wu F, Speck JS. Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN Japanese Journal of Applied Physics. 47: 5429-5431. DOI: 10.1143/Jjap.47.5429 |
0.701 |
|
2008 |
Koblmüller G, Hirai A, Wu F, Gallinat CS, Metcalfe GD, Shen H, Wraback M, Speck JS. Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN Applied Physics Letters. 93. DOI: 10.1063/1.3001806 |
0.694 |
|
2008 |
Metcalfe GD, Shen H, Wraback M, Hirai A, Wu F, Speck JS. Enhanced terahertz radiation from high stacking fault density nonpolar GaN Applied Physics Letters. 92. DOI: 10.1063/1.2937911 |
0.594 |
|
2008 |
Kim KC, Schmidt MC, Wu F, McLaurin MB, Hirai A, Nakamura S, Denbaars SP, Speck JS. Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth Applied Physics Letters. 93. DOI: 10.1063/1.2908978 |
0.72 |
|
2007 |
Hirai A, Jia Z, Schmidt MC, Farrell RM, Denbaars SP, Nakamura S, Speck JS, Fujito K. Formation and reduction of pyramidal hillocks on m -plane {1 1- 00} GaN Applied Physics Letters. 91. DOI: 10.1063/1.2802570 |
0.631 |
|
2007 |
Hirai A, Haskell BA, McLaurin MB, Wu F, Schmidt MC, Kim KC, Baker TJ, Denbaars SP, Nakamura S, Speck JS. Defect-mediated surface morphology of nonpolar m -plane GaN Applied Physics Letters. 90. DOI: 10.1063/1.2715126 |
0.718 |
|
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