Elaheh Ahmadi - Publications

Affiliations: 
2015 University of California, Santa Barbara, Santa Barbara, CA, United States 

32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Romanczyk B, Guidry M, Zheng X, Li H, Ahmadi E, Keller S, Mishra UK. Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs Ieee Transactions On Electron Devices. 67: 1542-1546. DOI: 10.1109/Ted.2020.2973081  0.818
2020 Bisi D, Meneghesso G, Mishra UK, Zanoni E, Wienecke S, Romanczyk B, Li H, Ahmadi E, Keller S, Guidry M, Santi CD, Meneghini M. Observation of I D -V D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures Ieee Electron Device Letters. 41: 345-348. DOI: 10.1109/Led.2020.2968875  0.793
2020 Romanczyk B, Mishra UK, Zheng X, Guidry M, Li H, Hatui N, Wurm C, Krishna A, Ahmadi E, Keller S. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Ieee Electron Device Letters. 41: 349-352. DOI: 10.1109/Led.2020.2967034  0.826
2020 Hatui N, Krishna A, Li H, Gupta C, Romanczyk B, Acker-James D, Ahmadi E, Keller S, Mishra UK. Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 35: 95002. DOI: 10.1088/1361-6641/Ab9727  0.809
2019 Gupta C, Tsukada Y, Romanczyk B, Pasayat SS, James D, Ahmadi E, Keller S, Mishra UK. First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain Japanese Journal of Applied Physics. 58: 30908. DOI: 10.7567/1347-4065/Aaffaa  0.771
2019 Pasayat SS, Ahmadi E, Romanczyk B, Koksaldi O, Agarwal A, Guidry M, Gupta C, Wurm C, Keller S, Mishra UK. First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology. 34: 45009. DOI: 10.1088/1361-6641/Ab0761  0.815
2018 Romanczyk B, Wienecke S, Guidry M, Li H, Ahmadi E, Zheng X, Keller S, Mishra UK. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs Ieee Transactions On Electron Devices. 65: 45-50. DOI: 10.1109/Ted.2017.2770087  0.831
2018 Bisi D, Santi CD, Meneghini M, Wienecke S, Guidry M, Li H, Ahmadi E, Keller S, Mishra UK, Meneghesso G, Zanoni E. Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs Ieee Electron Device Letters. 39: 1007-1010. DOI: 10.1109/Led.2018.2835517  0.828
2018 Zheng X, Li H, Guidry M, Romanczyk B, Ahmadi E, Hestroffer K, Wienecke S, Keller S, Mishra UK. Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ Ieee Electron Device Letters. 39: 409-412. DOI: 10.1109/Led.2018.2799160  0.792
2018 Han S, Mauze A, Ahmadi E, Mates T, Oshima Y, Speck JS. n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 33: 45001. DOI: 10.1088/1361-6641/Aaae56  0.396
2018 Oshima Y, Ahmadi E, Kaun S, Wu F, Speck JS. Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 33: 15013. DOI: 10.1088/1361-6641/Aa9C4D  0.336
2018 Gupta G, Ahmadi E, Suntrup DJ, Mishra UK. Establishment of design space for high current gain in III-N hot electron transistors Semiconductor Science and Technology. 33: 15018. DOI: 10.1088/1361-6641/Aa89Dd  0.829
2018 Li H, Wienecke S, Romanczyk B, Ahmadi E, Guidry M, Zheng X, Keller S, Mishra UK. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels Applied Physics Letters. 112: 73501. DOI: 10.1063/1.5010944  0.789
2018 Farzana E, Ahmadi E, Speck JS, Arehart AR, Ringel SA. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics. 123: 161410. DOI: 10.1063/1.5010608  0.351
2017 Ahmadi E, Koksaldi OS, Zheng X, Mates T, Oshima Y, Mishra UK, Speck JS. Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy Applied Physics Express. 10: 71101. DOI: 10.7567/Apex.10.071101  0.781
2017 Ahmadi E, Koksaldi OS, Kaun SW, Oshima Y, Short DB, Mishra UK, Speck JS. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy Applied Physics Express. 10: 41102. DOI: 10.7567/Apex.10.041102  0.788
2017 Alema F, Hertog B, Osinsky AV, Mukhopadhyay P, Toporkov M, Schoenfeld WV, Ahmadi E, Speck J. Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film Proceedings of Spie. 10105. DOI: 10.1117/12.2260824  0.481
2017 Mandal S, Agarwal A, Ahmadi E, Bhat KM, Ji D, Laurent MA, Keller S, Chowdhury S. Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer Ieee Electron Device Letters. 38: 933-936. DOI: 10.1109/Led.2017.2709940  0.791
2017 Moser N, McCandless J, Crespo A, Leedy K, Green A, Neal A, Mou S, Ahmadi E, Speck J, Chabak K, Peixoto N, Jessen G. Ge-Doped ${\beta }$ -Ga2O3 MOSFETs Ieee Electron Device Letters. 38: 775-778. DOI: 10.1109/Led.2017.2697359  0.469
2017 Wienecke S, Romanczyk B, Guidry M, Li H, Ahmadi E, Hestroffer K, Zheng X, Keller S, Mishra UK. N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz Ieee Electron Device Letters. 38: 359-362. DOI: 10.1109/Led.2017.2653192  0.83
2017 Ahmadi E, Oshima Y, Wu F, Speck JS. Schottky barrier height of Ni to β-(AlxGa1-x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 32: 35004. DOI: 10.1088/1361-6641/Aa53A7  0.363
2016 Wienecke S, Romanczyk B, Guidry M, Li H, Zheng X, Ahmadi E, Hestroffer K, Megalini L, Keller S, Mishra UK. N-Polar Deep Recess MISHEMTs with Record 2.9 W/mm at 94 GHz Ieee Electron Device Letters. 37: 713-716. DOI: 10.1109/Led.2016.2556717  0.837
2016 Zheng X, Guidry M, Li H, Ahmadi E, Hestroffer K, Romanczyk B, Wienecke S, Keller S, Mishra UK. N-Polar GaN MIS-HEMTs on Sapphire with High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage Ieee Electron Device Letters. 37: 77-80. DOI: 10.1109/Led.2015.2502253  0.831
2016 Hogan JE, Kaun SW, Ahmadi E, Oshima Y, Speck JS. Chlorine-based dry etching of β-Ga2O3 Semiconductor Science and Technology. 31: 65006. DOI: 10.1088/0268-1242/31/6/065006  0.37
2016 Ahmadi E, Keller S, Mishra UK. Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures Journal of Applied Physics. 120: 115302. DOI: 10.1063/1.4962321  0.514
2016 Romanczyk B, Guidry M, Wienecke S, Li H, Ahmadi E, Zheng X, Keller S, Mishra UK. Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz Electronics Letters. 52: 1813-1814. DOI: 10.1049/El.2016.2664  0.828
2015 Gupta G, Ahmadi E, Hestroffer K, Acuna E, Mishra UK. Common emitter current gain >1 in III-N hot electron transistors with 7-nm GaN/InGaN base Ieee Electron Device Letters. 36: 439-441. DOI: 10.1109/Led.2015.2416345  0.766
2015 Ahmadi E, Wu F, Li H, Kaun SW, Tahhan M, Hestroffer K, Keller S, Speck JS, Mishra UK. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates Semiconductor Science and Technology. 30: 1-8. DOI: 10.1088/0268-1242/30/5/055012  0.836
2014 Kaun SW, Ahmadi E, Mazumder B, Wu F, Kyle ECH, Burke PG, Mishra UK, Speck JS. GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/4/045011  0.694
2014 Ahmadi E, Chalabi H, Kaun SW, Shivaraman R, Speck JS, Mishra UK. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment Journal of Applied Physics. 116. DOI: 10.1063/1.4896967  0.527
2014 Ahmadi E, Shivaraman R, Wu F, Wienecke S, Kaun SW, Keller S, Speck JS, Mishra UK. Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime Applied Physics Letters. 104. DOI: 10.1063/1.4866435  0.834
2013 Wong MH, Keller S, Dasgupta NS, Denninghoff DJ, Kolluri S, Brown DF, Lu J, Fichtenbaum NA, Ahmadi E, Singisetti U, Chini A, Rajan S, Denbaars SP, Speck JS, Mishra UK. N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074009  0.815
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