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Matthew A. Laurent - Publications

Affiliations: 
2015 University of California, Santa Barbara, Santa Barbara, CA, United States 
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Laurent MA, Malakoutian M, Chowdhury S. A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si 3 N 4 -coated N-polar GaN Semiconductor Science and Technology. 35: 15003. DOI: 10.1088/1361-6641/Ab4F16  0.481
2019 Rajabi S, Mandal S, Ercan B, Li H, Laurent MA, Keller S, Chowdhury S. A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor Ieee Electron Device Letters. 40: 885-888. DOI: 10.1109/Led.2019.2914026  0.679
2018 Mandal S, Kanathila MB, Pynn CD, Li W, Gao J, Margalith T, Laurent MA, Chowdhury S. Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm−1 Semiconductor Science and Technology. 33: 065013. DOI: 10.1088/1361-6641/Aab73D  0.437
2017 Ji D, Laurent MA, Agarwal A, Li W, Mandal S, Keller S, Chowdhury S. Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Ieee Transactions On Electron Devices. 64: 805-808. DOI: 10.1109/Ted.2016.2632150  0.789
2017 Mandal S, Agarwal A, Ahmadi E, Bhat KM, Ji D, Laurent MA, Keller S, Chowdhury S. Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer Ieee Electron Device Letters. 38: 933-936. DOI: 10.1109/Led.2017.2709940  0.756
2017 Li W, Ji D, Tanaka R, Mandal S, Laurent M, Chowdhury S. Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process Ieee Journal of the Electron Devices Society. 5: 485-490. DOI: 10.1109/Jeds.2017.2751065  0.621
2017 Bonef B, Laurent M, Keller S, Mishra UK. Atom Probe Tomography Quantification of Alloy Fluctuations in (Al,In,Ga)N Microscopy and Microanalysis. 23: 716-717. DOI: 10.1017/S143192761700424X  0.337
2017 Foronda HM, Mazumder B, Young EC, Laurent MA, Li Y, DenBaars SP, Speck JS. Analysis of Vegard's law for lattice matching In x Al 1-x N to GaN by metalorganic chemical vapor deposition Journal of Crystal Growth. 475: 127-135. DOI: 10.1016/J.Jcrysgro.2017.06.008  0.375
2016 Enatsu Y, Gupta C, Laurent M, Keller S, Nakamura S, Mishra UK. Polarization induced three-dimensional hole gas in compositionally graded In x Ga1− x N layer Applied Physics Express. 9: 75502. DOI: 10.7567/Apex.9.075502  0.678
2016 Foronda HM, Laurent MA, Yonkee B, Keller S, DenBaars SP, Speck JS. Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition Semiconductor Science and Technology. 31: 85003. DOI: 10.1088/0268-1242/31/8/085003  0.39
2016 Laurent MA, Gupta G, Suntrup DJ, DenBaars SP, Mishra UK. Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4941531  0.768
2015 Gupta G, Laurent M, Li H, Suntrup DJ, Acuna E, Keller S, Mishra UK. Design space of III-N hot electron transistors using AlGaN and InGaN polarization-dipole barriers Ieee Electron Device Letters. 36: 23-25. DOI: 10.1109/Led.2014.2373375  0.781
2015 Kim J, Laurent MA, Li H, Lal S, Mishra UK. Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain Applied Physics Letters. 106. DOI: 10.1063/1.4906074  0.795
2014 Gupta G, Laurent M, Lu J, Keller S, Mishra UK. Design of polarization-dipole-induced isotype heterojunction diodes for use in III-N hot electron transistors Applied Physics Express. 7. DOI: 10.7567/Apex.7.014102  0.76
2014 Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001  0.791
2014 Laurent MA, Gupta G, Wienecke S, Muqtadir AA, Keller S, Denbaars SP, Mishra UK. Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4901834  0.802
2013 Liu X, Yeluri R, Kim J, Lal S, Raman A, Lund C, Wienecke S, Lu J, Laurent M, Keller S, Mishra UK. In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 103. DOI: 10.1063/1.4817385  0.677
2013 Lu J, Denninghoff D, Yeluri R, Lal S, Gupta G, Laurent M, Keller S, Denbaars SP, Mishra UK. Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4809997  0.708
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