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Donald J. Suntrup - Publications

Affiliations: 
2015 University of California, Santa Barbara, Santa Barbara, CA, United States 
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Gupta G, Ahmadi E, Suntrup DJ, Mishra UK. Establishment of design space for high current gain in III-N hot electron transistors Semiconductor Science and Technology. 33: 15018. DOI: 10.1088/1361-6641/Aa89Dd  0.755
2016 Laurent MA, Gupta G, Suntrup DJ, DenBaars SP, Mishra UK. Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4941531  0.739
2015 Gupta G, Laurent M, Li H, Suntrup DJ, Acuna E, Keller S, Mishra UK. Design space of III-N hot electron transistors using AlGaN and InGaN polarization-dipole barriers Ieee Electron Device Letters. 36: 23-25. DOI: 10.1109/Led.2014.2373375  0.742
2015 Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105003  0.737
2015 Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Barrier height fluctuations in InGaN polarization dipole diodes Applied Physics Letters. 107. DOI: 10.1063/1.4934876  0.705
2014 Gupta G, Laurent M, Li H, Suntrup DJ, Acuna E, Keller S, Mishra U. Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers Device Research Conference - Conference Digest, Drc. 255-256. DOI: 10.1109/DRC.2014.6872394  0.602
2014 Suntrup DJ, Gupta G, Li H, Keller S, Mishra UK. Measurement of the hot electron mean free path and the momentum relaxation rate in GaN Applied Physics Letters. 105. DOI: 10.1063/1.4905367  0.715
2014 Liu X, Kim J, Suntrup DJ, Wienecke S, Tahhan M, Yeluri R, Chan SH, Lu J, Li H, Keller S, Mishra UK. In situ metalorganic chemical vapor deposition of Al2O 3 on N-face GaN and evidence of polarity induced fixed charge Applied Physics Letters. 104. DOI: 10.1063/1.4886768  0.522
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